FR2798218B1 - Dispositif de memoire flash du type nor haute densite et son procede de programmation - Google Patents

Dispositif de memoire flash du type nor haute densite et son procede de programmation

Info

Publication number
FR2798218B1
FR2798218B1 FR0009191A FR0009191A FR2798218B1 FR 2798218 B1 FR2798218 B1 FR 2798218B1 FR 0009191 A FR0009191 A FR 0009191A FR 0009191 A FR0009191 A FR 0009191A FR 2798218 B1 FR2798218 B1 FR 2798218B1
Authority
FR
France
Prior art keywords
memory device
flash memory
high density
type flash
programming process
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0009191A
Other languages
English (en)
Other versions
FR2798218A1 (fr
Inventor
Doo Sup Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of FR2798218A1 publication Critical patent/FR2798218A1/fr
Application granted granted Critical
Publication of FR2798218B1 publication Critical patent/FR2798218B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
FR0009191A 1999-07-22 2000-07-13 Dispositif de memoire flash du type nor haute densite et son procede de programmation Expired - Fee Related FR2798218B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019990029786A KR100322470B1 (ko) 1999-07-22 1999-07-22 고밀도 노어형 플래시 메모리 장치 및 그것의 프로그램 방법

Publications (2)

Publication Number Publication Date
FR2798218A1 FR2798218A1 (fr) 2001-03-09
FR2798218B1 true FR2798218B1 (fr) 2007-04-27

Family

ID=19603702

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0009191A Expired - Fee Related FR2798218B1 (fr) 1999-07-22 2000-07-13 Dispositif de memoire flash du type nor haute densite et son procede de programmation

Country Status (7)

Country Link
US (1) US6212101B1 (fr)
JP (1) JP3854042B2 (fr)
KR (1) KR100322470B1 (fr)
CN (2) CN1168095C (fr)
DE (1) DE10034743B4 (fr)
FR (1) FR2798218B1 (fr)
TW (1) TW526495B (fr)

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DE60139670D1 (de) 2001-04-10 2009-10-08 St Microelectronics Srl Verfahren zur Programmierung nichtflüchtiger Speicherzellen mit Programmier- und Prüfalgorithmus unter Verwendung treppenförmiger Spannungsimpulse mit variablem Stufenabstand
US6434048B1 (en) 2001-07-20 2002-08-13 Hewlett-Packard Company Pulse train writing of worm storage device
KR100546343B1 (ko) * 2003-07-18 2006-01-26 삼성전자주식회사 플래시 메모리 장치의 프로그램 방법
KR100587702B1 (ko) 2004-07-09 2006-06-08 삼성전자주식회사 피크 전류의 감소 특성을 갖는 상변화 메모리 장치 및그에 따른 데이터 라이팅 방법
US7149119B2 (en) * 2004-09-30 2006-12-12 Matrix Semiconductor, Inc. System and method of controlling a three-dimensional memory
US20060067127A1 (en) * 2004-09-30 2006-03-30 Matrix Semiconductor, Inc. Method of programming a monolithic three-dimensional memory
KR100645049B1 (ko) 2004-10-21 2006-11-10 삼성전자주식회사 프로그램 특성을 향상시킬 수 있는 불 휘발성 메모리 장치및 그것의 프로그램 방법
US7092290B2 (en) * 2004-11-16 2006-08-15 Sandisk Corporation High speed programming system with reduced over programming
JP2007213664A (ja) 2006-02-08 2007-08-23 Nec Electronics Corp 不揮発性半導体記憶装置、及び不揮発性半導体記憶装置の書込み方法
KR100771517B1 (ko) 2006-02-17 2007-10-30 삼성전자주식회사 칩 사이즈를 줄일 수 있는 플래시 메모리 장치
US7447076B2 (en) * 2006-09-29 2008-11-04 Sandisk Corporation Systems for reverse reading in non-volatile memory with compensation for coupling
US7684247B2 (en) * 2006-09-29 2010-03-23 Sandisk Corporation Reverse reading in non-volatile memory with compensation for coupling
US7606070B2 (en) * 2006-12-29 2009-10-20 Sandisk Corporation Systems for margined neighbor reading for non-volatile memory read operations including coupling compensation
US7518923B2 (en) 2006-12-29 2009-04-14 Sandisk Corporation Margined neighbor reading for non-volatile memory read operations including coupling compensation
KR100888844B1 (ko) * 2007-06-28 2009-03-17 삼성전자주식회사 프로그램 성능을 향상시킬 수 있는 플래시 메모리 장치 및그것의 프로그램 방법
KR101177278B1 (ko) * 2007-10-08 2012-08-24 삼성전자주식회사 비휘발성 메모리 셀 프로그래밍 방법
US7848144B2 (en) 2008-06-16 2010-12-07 Sandisk Corporation Reverse order page writing in flash memories
KR101552209B1 (ko) * 2008-10-17 2015-09-11 삼성전자주식회사 멀티 비트를 프로그램하는 가변 저항 메모리 장치
CN102097130B (zh) * 2009-12-10 2014-03-05 辉芒微电子（深圳）有限公司 Eeprom擦写方法和装置
US8391073B2 (en) 2010-10-29 2013-03-05 Taiwan Semiconductor Manufacturing Company, Ltd. Adaptive control of programming currents for memory cells
US8391069B2 (en) * 2011-05-11 2013-03-05 Elite Semiconductor Memory Technology Inc. Programming method for nonvolatile semiconductor memory device
US9324438B2 (en) * 2013-08-05 2016-04-26 Jonker Llc Method of operating incrementally programmable non-volatile memory
CN109427399A (zh) * 2017-08-31 2019-03-05 北京兆易创新科技股份有限公司 一种NOR Flash的编程方法和编程装置
CN111798905B (zh) * 2020-07-01 2021-03-16 深圳市芯天下技术有限公司 减少非型闪存编程时间的方法、***、存储介质和终端
CN114203242A (zh) * 2021-12-02 2022-03-18 普冉半导体(上海)股份有限公司 Nor型闪存编程电路

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3626221B2 (ja) * 1993-12-13 2005-03-02 株式会社東芝 不揮発性半導体記憶装置
US5537350A (en) * 1993-09-10 1996-07-16 Intel Corporation Method and apparatus for sequential programming of the bits in a word of a flash EEPROM memory array
KR0170296B1 (ko) * 1995-09-19 1999-03-30 김광호 비휘발성 메모리소자
KR100252476B1 (ko) * 1997-05-19 2000-04-15 윤종용 플레이트 셀 구조의 전기적으로 소거 및 프로그램 가능한 셀들을 구비한 불 휘발성 반도체 메모리 장치및 그것의 프로그램 방법
GB2325546B (en) * 1997-05-21 2001-10-17 Motorola Inc Electrically programmable memory and method of programming

Also Published As

Publication number Publication date
CN1282077A (zh) 2001-01-31
DE10034743B4 (de) 2006-08-31
DE10034743A1 (de) 2001-02-15
US6212101B1 (en) 2001-04-03
CN1542858B (zh) 2010-05-26
FR2798218A1 (fr) 2001-03-09
TW526495B (en) 2003-04-01
JP2001052486A (ja) 2001-02-23
CN1542858A (zh) 2004-11-03
CN1168095C (zh) 2004-09-22
KR100322470B1 (ko) 2002-02-07
KR20010010734A (ko) 2001-02-15
JP3854042B2 (ja) 2006-12-06

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Effective date: 20140331