FR2798218B1 - Dispositif de memoire flash du type nor haute densite et son procede de programmation - Google Patents
Dispositif de memoire flash du type nor haute densite et son procede de programmationInfo
- Publication number
- FR2798218B1 FR2798218B1 FR0009191A FR0009191A FR2798218B1 FR 2798218 B1 FR2798218 B1 FR 2798218B1 FR 0009191 A FR0009191 A FR 0009191A FR 0009191 A FR0009191 A FR 0009191A FR 2798218 B1 FR2798218 B1 FR 2798218B1
- Authority
- FR
- France
- Prior art keywords
- memory device
- flash memory
- high density
- type flash
- programming process
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/12—Programming voltage switching circuits
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019990029786A KR100322470B1 (ko) | 1999-07-22 | 1999-07-22 | 고밀도 노어형 플래시 메모리 장치 및 그것의 프로그램 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2798218A1 FR2798218A1 (fr) | 2001-03-09 |
FR2798218B1 true FR2798218B1 (fr) | 2007-04-27 |
Family
ID=19603702
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0009191A Expired - Fee Related FR2798218B1 (fr) | 1999-07-22 | 2000-07-13 | Dispositif de memoire flash du type nor haute densite et son procede de programmation |
Country Status (7)
Country | Link |
---|---|
US (1) | US6212101B1 (fr) |
JP (1) | JP3854042B2 (fr) |
KR (1) | KR100322470B1 (fr) |
CN (2) | CN1168095C (fr) |
DE (1) | DE10034743B4 (fr) |
FR (1) | FR2798218B1 (fr) |
TW (1) | TW526495B (fr) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE60139670D1 (de) | 2001-04-10 | 2009-10-08 | St Microelectronics Srl | Verfahren zur Programmierung nichtflüchtiger Speicherzellen mit Programmier- und Prüfalgorithmus unter Verwendung treppenförmiger Spannungsimpulse mit variablem Stufenabstand |
US6434048B1 (en) | 2001-07-20 | 2002-08-13 | Hewlett-Packard Company | Pulse train writing of worm storage device |
KR100546343B1 (ko) * | 2003-07-18 | 2006-01-26 | 삼성전자주식회사 | 플래시 메모리 장치의 프로그램 방법 |
KR100587702B1 (ko) | 2004-07-09 | 2006-06-08 | 삼성전자주식회사 | 피크 전류의 감소 특성을 갖는 상변화 메모리 장치 및그에 따른 데이터 라이팅 방법 |
US7149119B2 (en) * | 2004-09-30 | 2006-12-12 | Matrix Semiconductor, Inc. | System and method of controlling a three-dimensional memory |
US20060067127A1 (en) * | 2004-09-30 | 2006-03-30 | Matrix Semiconductor, Inc. | Method of programming a monolithic three-dimensional memory |
KR100645049B1 (ko) | 2004-10-21 | 2006-11-10 | 삼성전자주식회사 | 프로그램 특성을 향상시킬 수 있는 불 휘발성 메모리 장치및 그것의 프로그램 방법 |
US7092290B2 (en) * | 2004-11-16 | 2006-08-15 | Sandisk Corporation | High speed programming system with reduced over programming |
JP2007213664A (ja) | 2006-02-08 | 2007-08-23 | Nec Electronics Corp | 不揮発性半導体記憶装置、及び不揮発性半導体記憶装置の書込み方法 |
KR100771517B1 (ko) | 2006-02-17 | 2007-10-30 | 삼성전자주식회사 | 칩 사이즈를 줄일 수 있는 플래시 메모리 장치 |
US7447076B2 (en) * | 2006-09-29 | 2008-11-04 | Sandisk Corporation | Systems for reverse reading in non-volatile memory with compensation for coupling |
US7684247B2 (en) * | 2006-09-29 | 2010-03-23 | Sandisk Corporation | Reverse reading in non-volatile memory with compensation for coupling |
US7606070B2 (en) * | 2006-12-29 | 2009-10-20 | Sandisk Corporation | Systems for margined neighbor reading for non-volatile memory read operations including coupling compensation |
US7518923B2 (en) | 2006-12-29 | 2009-04-14 | Sandisk Corporation | Margined neighbor reading for non-volatile memory read operations including coupling compensation |
KR100888844B1 (ko) * | 2007-06-28 | 2009-03-17 | 삼성전자주식회사 | 프로그램 성능을 향상시킬 수 있는 플래시 메모리 장치 및그것의 프로그램 방법 |
KR101177278B1 (ko) * | 2007-10-08 | 2012-08-24 | 삼성전자주식회사 | 비휘발성 메모리 셀 프로그래밍 방법 |
US7848144B2 (en) | 2008-06-16 | 2010-12-07 | Sandisk Corporation | Reverse order page writing in flash memories |
KR101552209B1 (ko) * | 2008-10-17 | 2015-09-11 | 삼성전자주식회사 | 멀티 비트를 프로그램하는 가변 저항 메모리 장치 |
CN102097130B (zh) * | 2009-12-10 | 2014-03-05 | 辉芒微电子(深圳)有限公司 | Eeprom擦写方法和装置 |
US8391073B2 (en) | 2010-10-29 | 2013-03-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Adaptive control of programming currents for memory cells |
US8391069B2 (en) * | 2011-05-11 | 2013-03-05 | Elite Semiconductor Memory Technology Inc. | Programming method for nonvolatile semiconductor memory device |
US9324438B2 (en) * | 2013-08-05 | 2016-04-26 | Jonker Llc | Method of operating incrementally programmable non-volatile memory |
CN109427399A (zh) * | 2017-08-31 | 2019-03-05 | 北京兆易创新科技股份有限公司 | 一种NOR Flash的编程方法和编程装置 |
CN111798905B (zh) * | 2020-07-01 | 2021-03-16 | 深圳市芯天下技术有限公司 | 减少非型闪存编程时间的方法、***、存储介质和终端 |
CN114203242A (zh) * | 2021-12-02 | 2022-03-18 | 普冉半导体(上海)股份有限公司 | Nor型闪存编程电路 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3626221B2 (ja) * | 1993-12-13 | 2005-03-02 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US5537350A (en) * | 1993-09-10 | 1996-07-16 | Intel Corporation | Method and apparatus for sequential programming of the bits in a word of a flash EEPROM memory array |
KR0170296B1 (ko) * | 1995-09-19 | 1999-03-30 | 김광호 | 비휘발성 메모리소자 |
KR100252476B1 (ko) * | 1997-05-19 | 2000-04-15 | 윤종용 | 플레이트 셀 구조의 전기적으로 소거 및 프로그램 가능한 셀들을 구비한 불 휘발성 반도체 메모리 장치및 그것의 프로그램 방법 |
GB2325546B (en) * | 1997-05-21 | 2001-10-17 | Motorola Inc | Electrically programmable memory and method of programming |
-
1999
- 1999-07-22 KR KR1019990029786A patent/KR100322470B1/ko not_active IP Right Cessation
-
2000
- 2000-06-20 JP JP2000184960A patent/JP3854042B2/ja not_active Expired - Lifetime
- 2000-07-13 FR FR0009191A patent/FR2798218B1/fr not_active Expired - Fee Related
- 2000-07-15 TW TW089114179A patent/TW526495B/zh not_active IP Right Cessation
- 2000-07-18 DE DE10034743A patent/DE10034743B4/de not_active Expired - Fee Related
- 2000-07-20 US US09/620,020 patent/US6212101B1/en not_active Expired - Fee Related
- 2000-07-21 CN CNB001216872A patent/CN1168095C/zh not_active Expired - Fee Related
- 2000-07-21 CN CN2004100335529A patent/CN1542858B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN1282077A (zh) | 2001-01-31 |
DE10034743B4 (de) | 2006-08-31 |
DE10034743A1 (de) | 2001-02-15 |
US6212101B1 (en) | 2001-04-03 |
CN1542858B (zh) | 2010-05-26 |
FR2798218A1 (fr) | 2001-03-09 |
TW526495B (en) | 2003-04-01 |
JP2001052486A (ja) | 2001-02-23 |
CN1542858A (zh) | 2004-11-03 |
CN1168095C (zh) | 2004-09-22 |
KR100322470B1 (ko) | 2002-02-07 |
KR20010010734A (ko) | 2001-02-15 |
JP3854042B2 (ja) | 2006-12-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20140331 |