FR2597262B1 - Circuit integre a semi-conducteur avec condensateur de derivation associe a son cablage - Google Patents

Circuit integre a semi-conducteur avec condensateur de derivation associe a son cablage

Info

Publication number
FR2597262B1
FR2597262B1 FR878705373A FR8705373A FR2597262B1 FR 2597262 B1 FR2597262 B1 FR 2597262B1 FR 878705373 A FR878705373 A FR 878705373A FR 8705373 A FR8705373 A FR 8705373A FR 2597262 B1 FR2597262 B1 FR 2597262B1
Authority
FR
France
Prior art keywords
wiring
semiconductor circuit
integrated semiconductor
bypass capacitor
capacitor associated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR878705373A
Other languages
English (en)
Other versions
FR2597262A1 (fr
Inventor
Nobuyuki Toyoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of FR2597262A1 publication Critical patent/FR2597262A1/fr
Application granted granted Critical
Publication of FR2597262B1 publication Critical patent/FR2597262B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
FR878705373A 1986-04-15 1987-04-15 Circuit integre a semi-conducteur avec condensateur de derivation associe a son cablage Expired - Lifetime FR2597262B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61086606A JPS62243345A (ja) 1986-04-15 1986-04-15 半導体集積回路装置

Publications (2)

Publication Number Publication Date
FR2597262A1 FR2597262A1 (fr) 1987-10-16
FR2597262B1 true FR2597262B1 (fr) 1994-08-05

Family

ID=13891669

Family Applications (1)

Application Number Title Priority Date Filing Date
FR878705373A Expired - Lifetime FR2597262B1 (fr) 1986-04-15 1987-04-15 Circuit integre a semi-conducteur avec condensateur de derivation associe a son cablage

Country Status (3)

Country Link
US (1) US4785202A (fr)
JP (1) JPS62243345A (fr)
FR (1) FR2597262B1 (fr)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8701997A (nl) * 1987-08-26 1989-03-16 Philips Nv Geintegreerde halfgeleiderschakeling met ontkoppelde dc bedrading.
CA1294333C (fr) * 1987-10-12 1992-01-14 Marie-Christine Rolland Systeme anti-vol de recepteur radio utilise notamment dans un vehicule automobile
US5162258A (en) * 1988-10-17 1992-11-10 Lemnios Zachary J Three metal personalization of application specific monolithic microwave integrated circuit
US4959705A (en) * 1988-10-17 1990-09-25 Ford Microelectronics, Inc. Three metal personalization of application specific monolithic microwave integrated circuit
US5182223A (en) * 1990-12-19 1993-01-26 Texas Instruments Incorporated Method of making an integrated circuit with capacitor
JPH0567933A (ja) * 1991-09-06 1993-03-19 Toshiba Corp レベルシフト回路
US5479316A (en) * 1993-08-24 1995-12-26 Analog Devices, Inc. Integrated circuit metal-oxide-metal capacitor and method of making same
US5508881A (en) * 1994-02-01 1996-04-16 Quality Microcircuits Corporation Capacitors and interconnect lines for use with integrated circuits
JP2936998B2 (ja) * 1994-03-15 1999-08-23 日本電気株式会社 周波数変換器
US5745017A (en) * 1995-01-03 1998-04-28 Rf Prime Corporation Thick film construct for quadrature translation of RF signals
US5534830A (en) * 1995-01-03 1996-07-09 R F Prime Corporation Thick film balanced line structure, and microwave baluns, resonators, mixers, splitters, and filters constructed therefrom
JPH10284605A (ja) * 1997-04-08 1998-10-23 Mitsubishi Electric Corp 半導体集積回路およびセルベース方式によりレイアウト設計された半導体集積回路
US6081006A (en) * 1998-08-13 2000-06-27 Cisco Systems, Inc. Reduced size field effect transistor
US6507476B1 (en) * 1999-11-01 2003-01-14 International Business Machines Corporation Tuneable ferroelectric decoupling capacitor
US6303456B1 (en) 2000-02-25 2001-10-16 International Business Machines Corporation Method for making a finger capacitor with tuneable dielectric constant
US6475838B1 (en) 2000-03-14 2002-11-05 International Business Machines Corporation Methods for forming decoupling capacitors
US6632686B1 (en) * 2000-09-29 2003-10-14 Intel Corporation Silicon on insulator device design having improved floating body effect
US20040038201A1 (en) * 2002-01-22 2004-02-26 Whitehead Institute For Biomedical Research Diagnostic and therapeutic applications for biomarkers of infection
JP5404678B2 (ja) * 2011-03-10 2014-02-05 株式会社東芝 電源制御装置
JP2013026540A (ja) * 2011-07-25 2013-02-04 Renesas Electronics Corp 半導体集積回路装置
US9270002B2 (en) * 2013-07-22 2016-02-23 Raytheon Company Differential-to-single-ended transmission line interface

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3784937A (en) * 1972-10-25 1974-01-08 Hewlett Packard Co Blocking capacitor for a thin-film rf transmission line
US4114120A (en) * 1976-11-23 1978-09-12 Dielectric Laboratories, Inc. Stripline capacitor
US4210885A (en) * 1978-06-30 1980-07-01 International Business Machines Corporation Thin film lossy line for preventing reflections in microcircuit chip package interconnections
FR2440618A1 (fr) * 1978-11-03 1980-05-30 Lignes Telegraph Telephon Circuit integre resistance - capacite a couches minces
FR2493045A1 (fr) * 1980-10-23 1982-04-30 Thomson Csf Structure de capacite dans un circuit integre a deux niveaux de metallisation et procede de fabrication
JPS5864048A (ja) * 1981-10-13 1983-04-16 Fujitsu Ltd 半導体集積回路装置
JPS6051323A (ja) * 1983-08-31 1985-03-22 Toshiba Corp Ｃｍｏｓ伝送回路
US4558235A (en) * 1983-08-31 1985-12-10 Texas Instruments Incorporated MESFET logic gate having both DC and AC level shift coupling to the output
JPS60109259A (ja) * 1983-11-18 1985-06-14 Hitachi Ltd 電子装置
JPS60134440A (ja) * 1983-12-23 1985-07-17 Hitachi Ltd 半導体集積回路装置
JPS60192359A (ja) * 1984-03-14 1985-09-30 Nec Corp 半導体メモリ装置
JPS60211866A (ja) * 1984-04-05 1985-10-24 Mitsubishi Electric Corp 半導体集積回路
US4663543A (en) * 1985-09-19 1987-05-05 Northern Telecom Limited Voltage level shifting depletion mode FET logical circuit

Also Published As

Publication number Publication date
FR2597262A1 (fr) 1987-10-16
JPS62243345A (ja) 1987-10-23
US4785202A (en) 1988-11-15

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