FR2543740B1 - METHOD FOR PRODUCING TRANSISTORS BY MONOLITHIC INTEGRATION IN ISOPLANAR TECHNOLOGY AND INTEGRATED CIRCUITS THUS OBTAINED - Google Patents
METHOD FOR PRODUCING TRANSISTORS BY MONOLITHIC INTEGRATION IN ISOPLANAR TECHNOLOGY AND INTEGRATED CIRCUITS THUS OBTAINEDInfo
- Publication number
- FR2543740B1 FR2543740B1 FR8305031A FR8305031A FR2543740B1 FR 2543740 B1 FR2543740 B1 FR 2543740B1 FR 8305031 A FR8305031 A FR 8305031A FR 8305031 A FR8305031 A FR 8305031A FR 2543740 B1 FR2543740 B1 FR 2543740B1
- Authority
- FR
- France
- Prior art keywords
- integrated circuits
- monolithic integration
- producing transistors
- isoplanar
- technology
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
- H01L21/76216—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
- H01L21/743—Making of internal connections, substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8305031A FR2543740B1 (en) | 1983-03-28 | 1983-03-28 | METHOD FOR PRODUCING TRANSISTORS BY MONOLITHIC INTEGRATION IN ISOPLANAR TECHNOLOGY AND INTEGRATED CIRCUITS THUS OBTAINED |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8305031A FR2543740B1 (en) | 1983-03-28 | 1983-03-28 | METHOD FOR PRODUCING TRANSISTORS BY MONOLITHIC INTEGRATION IN ISOPLANAR TECHNOLOGY AND INTEGRATED CIRCUITS THUS OBTAINED |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2543740A1 FR2543740A1 (en) | 1984-10-05 |
FR2543740B1 true FR2543740B1 (en) | 1986-05-09 |
Family
ID=9287294
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8305031A Expired FR2543740B1 (en) | 1983-03-28 | 1983-03-28 | METHOD FOR PRODUCING TRANSISTORS BY MONOLITHIC INTEGRATION IN ISOPLANAR TECHNOLOGY AND INTEGRATED CIRCUITS THUS OBTAINED |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2543740B1 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0215213A1 (en) * | 1985-09-16 | 1987-03-25 | Tektronix, Inc. | Method of fabricating high voltage and low voltage transistors using an epitaxial layer of uniform thickness |
FR2807567A1 (en) * | 2000-04-10 | 2001-10-12 | St Microelectronics Sa | METHOD FOR PRODUCING A BIPOLAR TRANSISTOR |
DE102017112647B4 (en) * | 2017-06-08 | 2020-06-18 | RF360 Europe GmbH | Electrical component wafer and electrical component |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3972754A (en) * | 1975-05-30 | 1976-08-03 | Ibm Corporation | Method for forming dielectric isolation in integrated circuits |
US4311532A (en) * | 1979-07-27 | 1982-01-19 | Harris Corporation | Method of making junction isolated bipolar device in unisolated IGFET IC |
US4454647A (en) * | 1981-08-27 | 1984-06-19 | International Business Machines Corporation | Isolation for high density integrated circuits |
-
1983
- 1983-03-28 FR FR8305031A patent/FR2543740B1/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
FR2543740A1 (en) | 1984-10-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
TP | Transmission of property | ||
ST | Notification of lapse |