EP3520392A4 - Systèmes et procédés de mise en oeuvre de techniques d'imagerie à intégration de retard temporel en conjonction avec des régions d'imagerie distinctes sur un capteur d'image monolithique avec dispositif à transfert de charge - Google Patents

Systèmes et procédés de mise en oeuvre de techniques d'imagerie à intégration de retard temporel en conjonction avec des régions d'imagerie distinctes sur un capteur d'image monolithique avec dispositif à transfert de charge Download PDF

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Publication number
EP3520392A4
EP3520392A4 EP17857577.5A EP17857577A EP3520392A4 EP 3520392 A4 EP3520392 A4 EP 3520392A4 EP 17857577 A EP17857577 A EP 17857577A EP 3520392 A4 EP3520392 A4 EP 3520392A4
Authority
EP
European Patent Office
Prior art keywords
conjunction
systems
methods
image sensor
time delay
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP17857577.5A
Other languages
German (de)
English (en)
Other versions
EP3520392A1 (fr
Inventor
Ignacio ZULETA
Adam Fritzler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Planet Labs PBC
Original Assignee
Planet Labs Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Planet Labs Inc filed Critical Planet Labs Inc
Publication of EP3520392A1 publication Critical patent/EP3520392A1/fr
Publication of EP3520392A4 publication Critical patent/EP3520392A4/fr
Pending legal-status Critical Current

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    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/71Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/711Time delay and integration [TDI] registers; TDI shift registers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/1462Coatings
    • H01L27/14621Colour filter arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/148Charge coupled imagers
    • H01L27/14831Area CCD imagers
    • H01L27/14856Time-delay and integration
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/148Charge coupled imagers
    • H01L27/14868CCD or CID colour imagers
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/80Camera processing pipelines; Components thereof
    • H04N23/84Camera processing pipelines; Components thereof for processing colour signals
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11Arrangement of colour filter arrays [CFA]; Filter mosaics
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/131Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements including elements passing infrared wavelengths
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/134Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on three different wavelength filter elements
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/135Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on four or more different wavelength filter elements
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50Control of the SSIS exposure
    • H04N25/53Control of the integration time
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/702SSIS architectures characterised by non-identical, non-equidistant or non-planar pixel layout
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/71Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75Circuitry for providing, modifying or processing image signals from the pixel array

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Color Television Image Signal Generators (AREA)
  • Studio Devices (AREA)
EP17857577.5A 2016-09-30 2017-09-29 Systèmes et procédés de mise en oeuvre de techniques d'imagerie à intégration de retard temporel en conjonction avec des régions d'imagerie distinctes sur un capteur d'image monolithique avec dispositif à transfert de charge Pending EP3520392A4 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201662402851P 2016-09-30 2016-09-30
US201662405120P 2016-10-06 2016-10-06
US15/640,305 US10616516B2 (en) 2016-09-30 2017-06-30 Systems and methods for implementing time delay integration imaging techniques in conjunction with distinct imaging regions on a monolithic charge-coupled device image sensor
PCT/US2017/054571 WO2018064612A1 (fr) 2016-09-30 2017-09-29 Systèmes et procédés de mise en œuvre de techniques d'imagerie à intégration de retard temporel en conjonction avec des régions d'imagerie distinctes sur un capteur d'image monolithique avec dispositif à transfert de charge

Publications (2)

Publication Number Publication Date
EP3520392A1 EP3520392A1 (fr) 2019-08-07
EP3520392A4 true EP3520392A4 (fr) 2020-05-13

Family

ID=61757344

Family Applications (1)

Application Number Title Priority Date Filing Date
EP17857577.5A Pending EP3520392A4 (fr) 2016-09-30 2017-09-29 Systèmes et procédés de mise en oeuvre de techniques d'imagerie à intégration de retard temporel en conjonction avec des régions d'imagerie distinctes sur un capteur d'image monolithique avec dispositif à transfert de charge

Country Status (4)

Country Link
US (3) US10616516B2 (fr)
EP (1) EP3520392A4 (fr)
CA (1) CA3038976A1 (fr)
WO (1) WO2018064612A1 (fr)

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AU2013295566B2 (en) 2012-07-26 2017-07-27 DePuy Synthes Products, Inc. Wide dynamic range using monochromatic sensor
US10303910B2 (en) * 2012-10-04 2019-05-28 The Code Corporation Apparatus comprising multiple sets of optics to facilitate capturing barcode and non-barcode images
US10742916B2 (en) * 2016-04-19 2020-08-11 Imec Vzw Imaging sensor and method for reading out image information
US10616516B2 (en) * 2016-09-30 2020-04-07 Planet Labs Inc. Systems and methods for implementing time delay integration imaging techniques in conjunction with distinct imaging regions on a monolithic charge-coupled device image sensor
KR102631964B1 (ko) * 2016-11-23 2024-01-31 엘지이노텍 주식회사 차량 주행 정보를 이용한 이미지 분석 방법, 장치, 시스템, 프로그램 및 저장 매체
US11431911B2 (en) * 2017-10-19 2022-08-30 Sony Corporation Imaging device and signal processing device
JP2019175912A (ja) * 2018-03-27 2019-10-10 ソニーセミコンダクタソリューションズ株式会社 撮像装置、及び、画像処理システム
JP2022527356A (ja) 2019-04-05 2022-06-01 スリーエム イノベイティブ プロパティズ カンパニー センサアレイ分光計
DE102019211805B3 (de) * 2019-08-06 2020-09-17 Deutsches Zentrum für Luft- und Raumfahrt e.V. Optisches System und TDI-Sensor
US11772824B1 (en) 2020-06-10 2023-10-03 Ball Aerospace & Technologies Corp. Systems and methods for hybrid lunar surface and space domain situational awareness
US11863885B2 (en) * 2020-06-30 2024-01-02 Pixart Imaging Inc. Time delay integration sensor with multiple sensor arrays
CN113824935B (zh) * 2021-09-23 2024-04-09 合肥埃科光电科技股份有限公司 伪彩色线扫描相机的时间延迟积分方法、装置及设备
CN113824936B (zh) * 2021-09-23 2024-02-09 合肥埃科光电科技股份有限公司 色彩滤波阵列线扫描相机色彩插值方法、装置及设备

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EP1171994A1 (fr) * 1999-03-22 2002-01-16 Sarnoff Corporation Procede et appareil destines a etendre le domaine dynamique de dispositifs a retard temporise et transfert de charge integre
US20150136954A1 (en) * 2013-11-12 2015-05-21 EO Vista, LLC Apparatus and Methods for Hyperspectral Imaging with Parallax Measurement
US20160014360A1 (en) * 2014-07-11 2016-01-14 Imperx, Inc. Area scan interline transfer ccd imaging device and apparatus with tdi scanning mode

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US6831688B2 (en) * 2002-04-08 2004-12-14 Recon/Optical, Inc. Multispectral or hyperspectral imaging system and method for tactical reconnaissance
WO2004106874A1 (fr) 2003-06-02 2004-12-09 Sensovation Ag Appareil et procedes de mesure photoelectrique
JP4823571B2 (ja) 2005-05-30 2011-11-24 株式会社 日立ディスプレイズ 三次元表示装置
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US9100545B2 (en) * 2009-01-15 2015-08-04 Raytheon Company Image device having a plurality of detectors in a time delay and integration (TDI) configuration and associated method
DE202012013411U1 (de) * 2011-04-25 2016-11-15 Terra Bella Technologies Inc. Systeme für Overhead-Bild- und Videoanzeige
US9137455B1 (en) 2014-11-05 2015-09-15 Duelight Llc Image sensor apparatus and method for obtaining multiple exposures with zero interframe time
JP6233188B2 (ja) * 2013-12-12 2017-11-22 ソニー株式会社 固体撮像素子およびその製造方法、並びに電子機器
US10742916B2 (en) * 2016-04-19 2020-08-11 Imec Vzw Imaging sensor and method for reading out image information
US10616516B2 (en) 2016-09-30 2020-04-07 Planet Labs Inc. Systems and methods for implementing time delay integration imaging techniques in conjunction with distinct imaging regions on a monolithic charge-coupled device image sensor

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EP1171994A1 (fr) * 1999-03-22 2002-01-16 Sarnoff Corporation Procede et appareil destines a etendre le domaine dynamique de dispositifs a retard temporise et transfert de charge integre
US20150136954A1 (en) * 2013-11-12 2015-05-21 EO Vista, LLC Apparatus and Methods for Hyperspectral Imaging with Parallax Measurement
US20160014360A1 (en) * 2014-07-11 2016-01-14 Imperx, Inc. Area scan interline transfer ccd imaging device and apparatus with tdi scanning mode

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See also references of WO2018064612A1 *

Also Published As

Publication number Publication date
US20200336688A1 (en) 2020-10-22
US11388359B2 (en) 2022-07-12
EP3520392A1 (fr) 2019-08-07
US20210211598A1 (en) 2021-07-08
WO2018064612A1 (fr) 2018-04-05
US10616516B2 (en) 2020-04-07
US20180098014A1 (en) 2018-04-05
CA3038976A1 (fr) 2018-04-05
US10958859B2 (en) 2021-03-23

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