EP2660869A4 - Semiconductor device and method for manufacturing same - Google Patents
Semiconductor device and method for manufacturing same Download PDFInfo
- Publication number
- EP2660869A4 EP2660869A4 EP11853454.4A EP11853454A EP2660869A4 EP 2660869 A4 EP2660869 A4 EP 2660869A4 EP 11853454 A EP11853454 A EP 11853454A EP 2660869 A4 EP2660869 A4 EP 2660869A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- semiconductor device
- manufacturing same
- manufacturing
- same
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1339—Gaskets; Spacers; Sealing of cells
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133553—Reflecting elements
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1341—Filling or closing of cells
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Nonlinear Science (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010289440 | 2010-12-27 | ||
PCT/JP2011/079547 WO2012090794A1 (en) | 2010-12-27 | 2011-12-20 | Semiconductor device and method for manufacturing same |
Publications (3)
Publication Number | Publication Date |
---|---|
EP2660869A1 EP2660869A1 (en) | 2013-11-06 |
EP2660869A4 true EP2660869A4 (en) | 2017-08-30 |
EP2660869B1 EP2660869B1 (en) | 2020-10-21 |
Family
ID=46382905
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP11853454.4A Active EP2660869B1 (en) | 2010-12-27 | 2011-12-20 | Semiconductor device |
Country Status (7)
Country | Link |
---|---|
US (2) | US20130271690A1 (en) |
EP (1) | EP2660869B1 (en) |
JP (1) | JP5284545B2 (en) |
KR (1) | KR101630022B1 (en) |
CN (1) | CN103283029B (en) |
BR (1) | BR112013015761A2 (en) |
WO (1) | WO2012090794A1 (en) |
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KR20130117558A (en) * | 2012-04-18 | 2013-10-28 | 삼성디스플레이 주식회사 | Thin film transistor, thin film transistor array panel and manufacturing method for a thin film transistor array panel |
US9246011B2 (en) * | 2012-11-30 | 2016-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8981374B2 (en) * | 2013-01-30 | 2015-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
CN105027296B (en) | 2013-03-07 | 2018-11-06 | 夏普株式会社 | Semiconductor device and its manufacturing method |
CN103474471B (en) * | 2013-08-29 | 2016-05-25 | 京东方科技集团股份有限公司 | Thin film transistor (TFT) and preparation method, array base palte and preparation method, display unit |
WO2015046204A1 (en) * | 2013-09-27 | 2015-04-02 | 三菱電機株式会社 | Tft array substrate, liquid crystal display device and method for producing tft array substrate |
KR102130516B1 (en) * | 2013-11-26 | 2020-07-06 | 엘지디스플레이 주식회사 | Oxide thin film transitor and method of fabricating the same |
JP6227396B2 (en) * | 2013-12-20 | 2017-11-08 | 株式会社ジャパンディスプレイ | THIN FILM TRANSISTOR AND DISPLAY DEVICE USING THE SAME |
KR102234434B1 (en) * | 2013-12-27 | 2021-04-02 | 삼성디스플레이 주식회사 | Display panel and method of manufacturing the same |
TWI686899B (en) * | 2014-05-02 | 2020-03-01 | 日商半導體能源研究所股份有限公司 | Semiconductor device, touch sensor, and display device |
JP6494184B2 (en) * | 2014-06-12 | 2019-04-03 | 三菱電機株式会社 | Thin film transistor, active matrix substrate, method for manufacturing thin film transistor, and method for manufacturing active matrix substrate |
CN104049428B (en) * | 2014-06-16 | 2017-02-22 | 京东方科技集团股份有限公司 | Array substrate and manufacturing method and display device thereof |
KR102251840B1 (en) * | 2014-08-14 | 2021-05-13 | 엘지디스플레이 주식회사 | Organic lighting emitting display device with anti reflective panel |
JP2016048706A (en) * | 2014-08-27 | 2016-04-07 | 三菱電機株式会社 | Array substrate and manufacturing method thereof |
CN104409362A (en) * | 2014-11-13 | 2015-03-11 | 京东方科技集团股份有限公司 | Manufacturing method and device for thin film transistor and array substrate |
CN104360557B (en) * | 2014-11-26 | 2017-04-26 | 京东方科技集团股份有限公司 | Array substrate, manufacturing method thereof and display device |
CN104752489A (en) * | 2015-04-10 | 2015-07-01 | 深圳市华星光电技术有限公司 | Array baseplate, display device and method used for manufacturing array baseplate |
US10103269B2 (en) * | 2015-05-08 | 2018-10-16 | Lg Chem, Ltd. | Thin-film transistor substrate having a light reflection reduction layer and display device comprising same |
KR102558900B1 (en) | 2015-10-23 | 2023-07-25 | 엘지디스플레이 주식회사 | Display Device and Method of Manufacturing the same |
CN106463407A (en) * | 2015-12-18 | 2017-02-22 | 京东方科技集团股份有限公司 | Thin film transistor, thin film transistor array substrate, display device, and preparation method thereof |
CN109791892A (en) * | 2016-09-27 | 2019-05-21 | 夏普株式会社 | Active-matrix substrate and its manufacturing method |
CN206441732U (en) * | 2017-02-22 | 2017-08-25 | 京东方科技集团股份有限公司 | A kind of display screen and display device |
JP2018170319A (en) * | 2017-03-29 | 2018-11-01 | 株式会社Joled | Semiconductor device and manufacturing method thereof, and display device |
KR102459046B1 (en) * | 2017-12-21 | 2022-10-25 | 엘지디스플레이 주식회사 | Liquid crystal display device |
JP2019114751A (en) * | 2017-12-26 | 2019-07-11 | シャープ株式会社 | Thin-film transistor substrate and liquid crystal display device including the same, and method for manufacturing thin-film transistor substrate |
JP2020004859A (en) * | 2018-06-28 | 2020-01-09 | 堺ディスプレイプロダクト株式会社 | Thin-film transistor, display, and method for manufacturing thin-film transistor |
DE102019004521A1 (en) | 2018-07-02 | 2020-01-02 | Sharp Kabushiki Kaisha | ACTIVE MATRIX SUBSTRATE AND METHOD FOR PRODUCING AN ACTIVE MATRIX SUBSTRATE |
CN110858035B (en) * | 2018-08-24 | 2022-12-02 | 夏普株式会社 | Liquid crystal display device having a plurality of pixel electrodes |
JP2022024203A (en) | 2018-11-26 | 2022-02-09 | 株式会社ジャパンディスプレイ | Display device |
CN113272942A (en) | 2019-02-21 | 2021-08-17 | 东丽株式会社 | Field-effect transistor, method of manufacturing the same, and wireless communication device using the same |
KR20210069289A (en) | 2019-12-03 | 2021-06-11 | 엘지디스플레이 주식회사 | Display device |
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TWI613489B (en) | 2008-12-03 | 2018-02-01 | 半導體能源研究所股份有限公司 | Liquid crystal display device |
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-
2011
- 2011-12-20 KR KR1020137019759A patent/KR101630022B1/en active IP Right Grant
- 2011-12-20 BR BR112013015761A patent/BR112013015761A2/en not_active Application Discontinuation
- 2011-12-20 CN CN201180063087.1A patent/CN103283029B/en active Active
- 2011-12-20 WO PCT/JP2011/079547 patent/WO2012090794A1/en active Application Filing
- 2011-12-20 EP EP11853454.4A patent/EP2660869B1/en active Active
- 2011-12-20 JP JP2012550867A patent/JP5284545B2/en active Active
- 2011-12-20 US US13/996,602 patent/US20130271690A1/en not_active Abandoned
-
2015
- 2015-12-11 US US14/966,020 patent/US9715145B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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US20100025678A1 (en) * | 2008-07-31 | 2010-02-04 | Shunpei Yamazaki | Semiconductor device and method for manufacturing the same |
JP2010056539A (en) * | 2008-07-31 | 2010-03-11 | Semiconductor Energy Lab Co Ltd | Semiconductor device and manufacturing method thereof |
US20100207119A1 (en) * | 2009-02-13 | 2010-08-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including a transistor, and manufacturing method of the semiconductor device |
JP2010212673A (en) * | 2009-02-13 | 2010-09-24 | Semiconductor Energy Lab Co Ltd | Transistor and semiconductor device with the same, and method of manufacturing the transistor and semiconductor device |
Non-Patent Citations (1)
Title |
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See also references of WO2012090794A1 * |
Also Published As
Publication number | Publication date |
---|---|
US9715145B2 (en) | 2017-07-25 |
EP2660869A1 (en) | 2013-11-06 |
EP2660869B1 (en) | 2020-10-21 |
KR101630022B1 (en) | 2016-06-13 |
US20130271690A1 (en) | 2013-10-17 |
CN103283029B (en) | 2016-03-30 |
WO2012090794A1 (en) | 2012-07-05 |
JP5284545B2 (en) | 2013-09-11 |
BR112013015761A2 (en) | 2018-11-06 |
CN103283029A (en) | 2013-09-04 |
JPWO2012090794A1 (en) | 2014-06-05 |
US20160097944A1 (en) | 2016-04-07 |
KR20130133258A (en) | 2013-12-06 |
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