EP1520303A1 - Composant a semi-conducteur a resistance integree radialement symetrique - Google Patents
Composant a semi-conducteur a resistance integree radialement symetriqueInfo
- Publication number
- EP1520303A1 EP1520303A1 EP03763689A EP03763689A EP1520303A1 EP 1520303 A1 EP1520303 A1 EP 1520303A1 EP 03763689 A EP03763689 A EP 03763689A EP 03763689 A EP03763689 A EP 03763689A EP 1520303 A1 EP1520303 A1 EP 1520303A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- resistance
- semiconductor component
- component according
- inhomogeneities
- radially symmetrical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 58
- 230000001419 dependent effect Effects 0.000 claims abstract description 5
- 230000007423 decrease Effects 0.000 claims description 6
- 230000005855 radiation Effects 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 description 14
- 238000000034 method Methods 0.000 description 13
- 239000002019 doping agent Substances 0.000 description 11
- 238000005530 etching Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000002513 implantation Methods 0.000 description 5
- 230000036961 partial effect Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 230000002829 reductive effect Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
- H01L29/7408—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a capacitor or a resistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/8605—Resistors with PN junctions
Definitions
- the present invention relates to a semiconductor component arranged in a semiconductor body and having at least one integrated lateral resistor.
- Such semiconductor components can be of any design, that is to say they can be a thyristor, an IGBT, a MOSFET, a J-FET, a bipolar transistor or simply a resistance structure in a semiconductor layer of whatever type.
- the structure and mode of operation of such semiconductor components is widely known, so that a detailed description of these semiconductor components can be dispensed with here.
- a thyristor with a radially symmetrical resistance structure is to be assumed as an example of a semiconductor component, but without restricting the invention to this semiconductor component.
- Integrated resistors play a major role in power semiconductor devices in general and in high voltage thyristors in particular. For example, you will be in
- Thyristor structures with so-called amplifying gate structure implemented to limit the rate of current rise when the thyristor is switched on. Without integrated resistors, such thyristor structures risk being destroyed.
- a thyristor with an amplifying gate structure is described, for example, in German Patent DE 42 15 378 Cl.
- An exemplary further development of this thyristor structure is described in DE 196 50 762 AI, in particular there in FIGS. 1, 3 and 4.
- high-performance thyrists and methods for realization are of integrated resistors in thyristors in an article by VAK Te ple, "Advanced Light Triggered Thyristor for Electric Power Systems", IEEE International Conference Thyristors and Variable and Static Equipment for AC and DC Transmission (1981).
- Integrated resistors in thyristor structures have the purpose of limiting the current through one or more of the so-called amplifying gate stages in order to prevent possible destruction of the component under extreme switching conditions.
- a thyristor with an amplifying gate structure is usually constructed with radial symmetry.
- the main emitter is arranged concentrically around one or more auxiliary emitters which are contacted via auxiliary emitter electrodes or so-called amplifying gate electrodes.
- An integrated lateral resistor for protecting the thyristor can be provided between one or more of these amplifying gate electrodes, which is arranged in a resistance range provided for this purpose.
- the amplifying gate electrodes are typically circular.
- the integrated lateral resistance is also preferably of a radially symmetrical shape.
- the value of the integrated lateral position R depends on the one hand on the sheet resistance R s and on the other hand on the inner ri and outer radius r a of the resistance range. In the case of radially symmetrical resistance structures, the following applies for the integrated lateral resistance R:
- the sheet resistance R s is dependent on the doping concentration and the mobility of the charge carriers in the semiconductor layer.
- the layer resistance R s is set, for example, by doping and the selected diffusion parameters (temperature, duration of the diffusion). In the case of a homogeneously doped resistance structure, the sheet resistance is therefore constant.
- Radially symmetrical lateral resistors however, often consist of an annular resistance area that contains one or more annular non-homogeneous resistance areas.
- European patent EP 472 880 B1 discloses a thyristor with such a lateral inhomogeneous resistance structure and a method for its production. These radially symmetrical inhomogeneities are arranged at equidistant distances from one another and also have the same ring thickness.
- Protective voltage affects. Since the values of the lateral resistance and the protective voltage depend on the temperature, de further temperature increase in the component itself to change these set values. In extreme conditions, that is to say with high currents and / or voltages, the lateral resistance is therefore overloaded there and thermally destroyed, which should understandably be avoided under all circumstances.
- the present invention is therefore based on the object of realizing a preferably radial location dependence of the sheet resistance R s in such a way that, in addition to the requirement for the total resistance R, a further requirement for a second physically relevant parameter is fulfilled.
- An implementation according to the invention comprises a generic semiconductor component with a location-independent differential resistance, that is to say, for example, a sheet resistance R s that is linearly dependent on r.
- a differential resistance could be provided which is such that the power dissipated in the resistance no longer depends (or only weakly) on the radial component.
- the temperature resistance is also significantly improved, since the radially inner resistance area is relieved by a greater resistance contribution from the outer areas.
- the largely constant differential resistance is typically set by means of inhomogeneities arranged in the resistance range. These inhomogeneities are preferably arranged radially symmetrically in the resistance region and have e.g. a different electrically active doping concentration compared to the doping of the other, homogeneously doped resistance areas.
- the radially symmetrical inhomogeneity can be designed as follows:
- the inhomogeneities have a locally changed (preferably increased) sheet resistance due to radiation than the original resistance range.
- the inhomogeneities have a changed, preferably higher, doping concentration than the resistance region.
- Radially symmetrical inhomogeneities in which the resistance is locally reduced or the doping is locally increased, can be realized by one or more of the following measures:
- the radially symmetrical inhomogeneities can take the following forms in the projection surface of the semiconductor body:
- the inhomogeneities are designed as concentric circular rings.
- the inhomogeneities are formed as points or circles, which are arranged concentrically around the center of the radially symmetrical semiconductor component. In principle, other geometries are also conceivable (apart from points, circles).
- the semiconductor component itself is advantageously designed as a thyristor, in particular as a high-voltage thyristor. Furthermore, the thyristor is in a very advantageous
- FIG. 1 shows a partial section of an amplifying gate structure of a thyristor with an integrated resistor according to the invention
- FIG. 2 using partial sections (a) - (b), a first method for realizing an integrated lateral resistor with a location-independent differential resistor;
- FIG. 3 shows, using partial sections (a) - (c), a second method for realizing an integrated lateral resistor with location-independent differential resistance.
- Figure 1 shows a partial section of a thyristor known from the aforementioned DE 196 50 762 AI.
- a semiconductor body for example a silicon wafer, contains an n ⁇ -doped anode-side base zone 2.
- a p + -doped emitter zone 5 adjoins the base zone 2. Large contact is made with the emitter zone 5 on the rear side of the pane 13 via an anode electrode 6.
- a p-doped base zone 3 follows on the cathode side.
- n + -doped emitter zones 7 are embedded in the base zone 3, which can be, for example, the auxiliary emitter zones of auxiliary thyristors.
- the emitter zones 7 are contacted by emitter electrodes 10.
- the emitter electrodes 10 also contact the base zone 3 on the outside.
- the semiconductor component is constructed rotationally symmetrically with respect to the axis 15 which is perpendicular to the two surfaces 13, 14 of the semiconductor body 1 and runs in the central region 9 'of the semiconductor component.
- the cathode-side base zone 3 and the emitter zones 7 as well as the corresponding electrodes 10 are circular or annular in the plane of the surface of the semiconductor body 1.
- the thyristor according to the invention is preferably a ring thyristor.
- the shapes of the zones and layers 3 to 8 shown above are not mandatory. They can also deviate from the circular shape or circular ring shape and, for example, be polygonal.
- the thyristor shown in the partial section in FIG. 1 furthermore has a customary amplifying gate structure and one integrated lateral resistor R arranged in a resistance region 9.
- the integrated resistance region 9 is located between two auxiliary emitters of the amplifying gate structure, specifically between the third and fourth amplifying gates AG3, AG4.
- the resistance region 9 has radially symmetrical, inhomogeneous resistance regions (not shown in FIG. 1) in such a way that the differential resistance of the lateral resistance R is thereby location-independent, ie constant.
- the resistance area 9 consists of a plurality of annular resistance rings.
- the resistance region 9 contains annular inhomogeneous regions which have an increased or decreased layer resistance compared to the other regions of the resistance region 9 and which have been produced by local doping, irradiation or etching.
- FIG. 2 (a) shows a silicon layer 20 arranged in a semiconductor body 1, in which the radially homogeneously doped resistance region 9 is embedded.
- Any mask 21, for example made of silicon dioxide or photoresist, has been applied to the surface of the semiconductor body 1 in the region of the resistance region 9.
- the exposed areas of the mask 22 define radially symmetrical, circular ring-shaped areas.
- FIG. 2 (b) shows the progress of the realization of the resistance area 9 according to the invention from FIG. 2 (a).
- the radially symmetrical circular inhomogeneities 23 are generated within the resistance region 9. These inhomogeneities 23 either have an increased defect density generated by irradiation and thus a higher resistance, or alternatively they can have one by diffusion or
- Ion implantation of doping elements of the same power type caused a higher doping concentration and thus a lower resistance.
- a radially constant sheet resistance in the resistance range is assumed, the resistance range being irradiated with ions via a correspondingly structured mask.
- defects are generated in the resistance region 9 at the locations of the irradiation, so that the conductivity is reduced at these locations.
- a typical mask shape forms, for example, an arrangement with concentric rings, the width b of the inhomogeneities embedded therein increasing towards the outside and / or the ring spacing a decreasing towards the outside.
- the respective widths b and distances a are adjusted so that the required properties are met according to the radially constant differential resistance.
- the mask 21 it is also conceivable to design the mask 21 as a mask with corresponding spatial thickness variations, so that there is more absorption of the radiation at the locations of increased thickness than at locations of smaller thickness, which means that a lower defect density and thus a lower resistance is provided at the locations of greater thickness. is riert. While the shape of the mask is largely determined by the spatial course of the resistance, the absolute resistance value of the lateral resistance can moreover be set very precisely by means of an additional, spatially homogeneous radiation.
- the depths t1, t2 of the inhomogeneities 23 and / or the resistance range 9 could also be varied in a suitable manner.
- a homogeneous dopant coating 24 is applied to the surface of the silicon layer 20.
- a structured mask 21, which has the function of an etching barrier, is in turn applied to this.
- FIG. 3 (b) shows the progress of the realization of the resistance range 9 according to the invention from FIG. 3 (a), in which the semiconductor body 1 is subjected to an etching process - in the example in FIG. 3 (b) this is a wet chemical etching process.
- the exposed areas 22 of the dopant covering 24 are etched away by the etching, the areas of the dopant covering 24 below the mask 21 remaining with the exception of a more or less severe undercut and forming a structured dopant covering 24 ′.
- FIG. 3 (c) shows the progress of the implementation from FIG. 3 (b).
- the silicon layer 20 is shown here after a diffusion process in which dopants diffuse from the structured dopant coating 24 ′ into the layer 20 and can form the spatially structured resistance region 9 there.
- the integrated, approximately location-independent resistor with location-dependent sheet resistance sketched in FIG. 3 is advantageously the result of a relatively rapidly diffusing, doping element.
- this element can, for example, by
- the absolute resistance value can be set by the occupancy value, the selected diffusion time and the diffusion temperature.
- the entire course of the process can of course be preceded by a preceding, unmasked doping process (diffusion or implantation) in order to generate a homogeneous basic doping.
- An exemplary embodiment for producing a resistance curve with certain spatial properties consists in distributing the doping elements radially inhomogeneously in the semiconductor body 1 instead of by masking the dopant by masking ion implantation (or also diffusion).
- a mask for example made of silicon dioxide (SiO 2 ), silicon nitride (Si 3 N) or photoresist, ensures that the dopant to be diffused can only penetrate locally into the semiconductor body 1 during the doping phase (implantation or diffusion). Local doping wells are thereby produced in the semiconductor body 1. The dopant is then further diffused into the semiconductor body 1.
- an arrangement of concentric rings is again suitable for the structure of the etching mask 21, the width (b1) of which decreases towards the outside in order to achieve a radially constant differential resistance and / or in which the ring spacing (a1) towards the outside increases.
- this measure modifies the radial course of the sheet resistance with radially unchanged parameters al and bl in such a way that one over the Electrical voltage drop across the resistor is distributed more evenly across the resistor and thus the power dissipated in the resistor is also better distributed radially.
- the final course of resistance is produced by a final diffusion step.
- the invention is not restricted exclusively to the exemplary embodiments shown in FIGS. 1 to 3. Instead, a large number of new variants can be specified, for example, by exchanging the conductivity types n for p and vice versa, and by varying the doping concentrations.
- the different methods described above for producing a semiconductor component with an integrated, inhomogeneous resistance range can also be combined and can be applied to both n- and p-type resistance ranges.
- the methods according to the invention can be used to implement any type of semiconductor component.
- the methods described for producing a Thyristors used.
- many other known methods for producing the radially symmetrical resistance structures with constant differential resistance could also be specified, which are within the scope of the technical knowledge of a person skilled in the art.
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10231199 | 2002-07-10 | ||
DE10231199A DE10231199A1 (de) | 2002-07-10 | 2002-07-10 | Halbleiterbauelement |
PCT/EP2003/007059 WO2004008546A1 (fr) | 2002-07-10 | 2003-07-02 | Composant a semi-conducteur a resistance integree radialement symetrique |
Publications (1)
Publication Number | Publication Date |
---|---|
EP1520303A1 true EP1520303A1 (fr) | 2005-04-06 |
Family
ID=30009883
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP03763689A Ceased EP1520303A1 (fr) | 2002-07-10 | 2003-07-02 | Composant a semi-conducteur a resistance integree radialement symetrique |
Country Status (5)
Country | Link |
---|---|
US (1) | US6963088B2 (fr) |
EP (1) | EP1520303A1 (fr) |
JP (1) | JP4115993B2 (fr) |
DE (1) | DE10231199A1 (fr) |
WO (1) | WO2004008546A1 (fr) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102007041124B4 (de) * | 2007-08-30 | 2009-06-04 | Infineon Technologies Ag | Thyristor mit verbessertem Einschaltverhalten, Thyristoranordnung mit einem Thyristor, Verfahren zur Herstellung eines Thyristors und einer Thyristoranordnung |
US7986197B2 (en) * | 2008-09-12 | 2011-07-26 | Lonestar Inventions, L.P. | Compact distributed ladder attenuator |
DE102008054094B4 (de) * | 2008-10-31 | 2013-12-05 | Infineon Technologies Ag | Halbleiterbauelement mit einer integrierten Widerstandsstruktur |
DE102011002479A1 (de) | 2011-01-05 | 2012-07-05 | Infineon Technologies Bipolar Gmbh & Co. Kg | Verfahren zur Herstellung eines Halbleiterbauelements mit integriertem Lateralwiderstand |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0190162B1 (fr) * | 1984-06-29 | 1990-11-07 | General Electric Company | Thyristor a mise sous tension regulee |
US5204273A (en) * | 1990-08-20 | 1993-04-20 | Siemens Aktiengesellschaft | Method for the manufacturing of a thyristor with defined lateral resistor |
DE4215378C1 (de) * | 1992-05-11 | 1993-09-30 | Siemens Ag | Thyristor mit Durchbruchbereich |
GB2285882B (en) * | 1994-01-14 | 1997-12-17 | Westinghouse Brake & Signal | Semiconductor switching devices |
US6066864A (en) * | 1996-05-20 | 2000-05-23 | Siemens Aktiengesellschaft | Thyristor with integrated dU/dt protection |
DE19640311B4 (de) * | 1996-09-30 | 2005-12-29 | Eupec Gmbh & Co. Kg | Halbleiterbauelement mit Lateralwiderstand und Verfahren zu dessen Herstellung |
DE19650762A1 (de) * | 1996-09-30 | 1998-07-02 | Eupec Gmbh & Co Kg | Thyristor mit Durchbruchbereich |
-
2002
- 2002-07-10 DE DE10231199A patent/DE10231199A1/de not_active Withdrawn
-
2003
- 2003-07-02 EP EP03763689A patent/EP1520303A1/fr not_active Ceased
- 2003-07-02 WO PCT/EP2003/007059 patent/WO2004008546A1/fr active Application Filing
- 2003-07-02 JP JP2004520463A patent/JP4115993B2/ja not_active Expired - Fee Related
-
2004
- 2004-03-10 US US10/797,246 patent/US6963088B2/en not_active Expired - Lifetime
Non-Patent Citations (1)
Title |
---|
See references of WO2004008546A1 * |
Also Published As
Publication number | Publication date |
---|---|
US20040169256A1 (en) | 2004-09-02 |
WO2004008546A1 (fr) | 2004-01-22 |
JP4115993B2 (ja) | 2008-07-09 |
US6963088B2 (en) | 2005-11-08 |
DE10231199A1 (de) | 2004-02-05 |
JP2005520352A (ja) | 2005-07-07 |
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