EP0977911A4 - Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells - Google Patents

Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells

Info

Publication number
EP0977911A4
EP0977911A4 EP98913276A EP98913276A EP0977911A4 EP 0977911 A4 EP0977911 A4 EP 0977911A4 EP 98913276 A EP98913276 A EP 98913276A EP 98913276 A EP98913276 A EP 98913276A EP 0977911 A4 EP0977911 A4 EP 0977911A4
Authority
EP
European Patent Office
Prior art keywords
electrodeposition
gallium
indium
copper
preparation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP98913276A
Other languages
German (de)
French (fr)
Other versions
EP0977911A1 (en
Inventor
Raghu N Bhattacharya
Falah Hasoon
Holm Wiesner
James Keane
Kannan Ramanathan
Rommel Noufi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US08/870,081 external-priority patent/US5871630A/en
Application filed by Individual filed Critical Individual
Publication of EP0977911A1 publication Critical patent/EP0977911A1/en
Publication of EP0977911A4 publication Critical patent/EP0977911A4/en
Ceased legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02568Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02422Non-crystalline insulating materials, e.g. glass, polymers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02436Intermediate layers between substrates and deposited layers
    • H01L21/02439Materials
    • H01L21/02491Conductive materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02623Liquid deposition
    • H01L21/02628Liquid deposition using solutions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02631Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264Inorganic materials
    • H01L31/032Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/56Electroplating: Baths therefor from solutions of alloys
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/541CuInSe2 material PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Photovoltaic Devices (AREA)
EP98913276A 1997-04-21 1998-03-30 Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells Ceased EP0977911A4 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US4450697P 1997-04-21 1997-04-21
US44506P 1997-04-21
US08/870,081 US5871630A (en) 1995-12-12 1997-06-05 Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells
US870081 1997-06-05
PCT/US1998/006212 WO1998048079A1 (en) 1997-04-21 1998-03-30 Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells

Publications (2)

Publication Number Publication Date
EP0977911A1 EP0977911A1 (en) 2000-02-09
EP0977911A4 true EP0977911A4 (en) 2002-05-22

Family

ID=26721647

Family Applications (1)

Application Number Title Priority Date Filing Date
EP98913276A Ceased EP0977911A4 (en) 1997-04-21 1998-03-30 Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells

Country Status (4)

Country Link
EP (1) EP0977911A4 (en)
AU (1) AU6786998A (en)
CA (1) CA2284826C (en)
WO (1) WO1998048079A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0127113D0 (en) * 2001-11-10 2002-01-02 Univ Sheffield Copper indium based thin film photovoltaic devices and methods of making the same
JP2011503847A (en) 2007-11-02 2011-01-27 ワコンダ テクノロジーズ, インコーポレイテッド Crystalline thin film photovoltaic structure and method for forming the same
DE102008051520A1 (en) * 2008-10-13 2010-04-22 Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh A method of producing a (001) textured crystal layer of a photoactive lattice semiconductor on a metallically conductive layer involving a metal promoter
CN102741458B (en) * 2009-09-08 2016-04-13 成都方舟久远光伏科技有限公司 Produce the electrochemical method of copper-indium-galliun-selenium (CIGS) solar cell
MX2012010733A (en) 2010-03-17 2012-12-17 Dow Global Technologies Llc Chalcogenide-based materials and improved methods of making such materials.
WO2013164248A1 (en) * 2012-05-02 2013-11-07 Umicore Selenite precursor and ink for the manufacture of cigs photovoltaic cells

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997022152A1 (en) * 1995-12-12 1997-06-19 Davis, Joseph & Negley PREPARATION OF CuxInyGazSen (x=0-2, y=0-2, z=0-2, n=0-3) PRECURSOR FILMS BY ELECTRODEPOSITION FOR FABRICATING HIGH EFFICIENCY SOLAR CELLS

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5221660A (en) * 1987-12-25 1993-06-22 Sumitomo Electric Industries, Ltd. Semiconductor substrate having a superconducting thin film
US5441897A (en) * 1993-04-12 1995-08-15 Midwest Research Institute Method of fabricating high-efficiency Cu(In,Ga)(SeS)2 thin films for solar cells

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997022152A1 (en) * 1995-12-12 1997-06-19 Davis, Joseph & Negley PREPARATION OF CuxInyGazSen (x=0-2, y=0-2, z=0-2, n=0-3) PRECURSOR FILMS BY ELECTRODEPOSITION FOR FABRICATING HIGH EFFICIENCY SOLAR CELLS

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
R. N. BHATTACHARYA C.S.: "12.3 % Efficient CuIn1-xGaxSe2-Based Device from Electrodeposited Precursor", J. ELECTROCHEM. SOC., vol. 144, no. 4, April 1997 (1997-04-01), pages 1376 - 1379, XP002189137 *
See also references of WO9848079A1 *

Also Published As

Publication number Publication date
CA2284826A1 (en) 1998-10-29
EP0977911A1 (en) 2000-02-09
CA2284826C (en) 2007-06-05
WO1998048079A1 (en) 1998-10-29
AU6786998A (en) 1998-11-13

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