EP0977911A4 - Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells - Google Patents
Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cellsInfo
- Publication number
- EP0977911A4 EP0977911A4 EP98913276A EP98913276A EP0977911A4 EP 0977911 A4 EP0977911 A4 EP 0977911A4 EP 98913276 A EP98913276 A EP 98913276A EP 98913276 A EP98913276 A EP 98913276A EP 0977911 A4 EP0977911 A4 EP 0977911A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- electrodeposition
- gallium
- indium
- copper
- preparation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000004070 electrodeposition Methods 0.000 title 1
- 239000002243 precursor Substances 0.000 title 1
- 238000002360 preparation method Methods 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02491—Conductive materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US4450697P | 1997-04-21 | 1997-04-21 | |
US44506P | 1997-04-21 | ||
US08/870,081 US5871630A (en) | 1995-12-12 | 1997-06-05 | Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells |
US870081 | 1997-06-05 | ||
PCT/US1998/006212 WO1998048079A1 (en) | 1997-04-21 | 1998-03-30 | Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0977911A1 EP0977911A1 (en) | 2000-02-09 |
EP0977911A4 true EP0977911A4 (en) | 2002-05-22 |
Family
ID=26721647
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP98913276A Ceased EP0977911A4 (en) | 1997-04-21 | 1998-03-30 | Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0977911A4 (en) |
AU (1) | AU6786998A (en) |
CA (1) | CA2284826C (en) |
WO (1) | WO1998048079A1 (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB0127113D0 (en) * | 2001-11-10 | 2002-01-02 | Univ Sheffield | Copper indium based thin film photovoltaic devices and methods of making the same |
JP2011503847A (en) | 2007-11-02 | 2011-01-27 | ワコンダ テクノロジーズ, インコーポレイテッド | Crystalline thin film photovoltaic structure and method for forming the same |
DE102008051520A1 (en) * | 2008-10-13 | 2010-04-22 | Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh | A method of producing a (001) textured crystal layer of a photoactive lattice semiconductor on a metallically conductive layer involving a metal promoter |
CN102741458B (en) * | 2009-09-08 | 2016-04-13 | 成都方舟久远光伏科技有限公司 | Produce the electrochemical method of copper-indium-galliun-selenium (CIGS) solar cell |
MX2012010733A (en) | 2010-03-17 | 2012-12-17 | Dow Global Technologies Llc | Chalcogenide-based materials and improved methods of making such materials. |
WO2013164248A1 (en) * | 2012-05-02 | 2013-11-07 | Umicore | Selenite precursor and ink for the manufacture of cigs photovoltaic cells |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1997022152A1 (en) * | 1995-12-12 | 1997-06-19 | Davis, Joseph & Negley | PREPARATION OF CuxInyGazSen (x=0-2, y=0-2, z=0-2, n=0-3) PRECURSOR FILMS BY ELECTRODEPOSITION FOR FABRICATING HIGH EFFICIENCY SOLAR CELLS |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5221660A (en) * | 1987-12-25 | 1993-06-22 | Sumitomo Electric Industries, Ltd. | Semiconductor substrate having a superconducting thin film |
US5441897A (en) * | 1993-04-12 | 1995-08-15 | Midwest Research Institute | Method of fabricating high-efficiency Cu(In,Ga)(SeS)2 thin films for solar cells |
-
1998
- 1998-03-30 WO PCT/US1998/006212 patent/WO1998048079A1/en not_active Application Discontinuation
- 1998-03-30 CA CA002284826A patent/CA2284826C/en not_active Expired - Fee Related
- 1998-03-30 EP EP98913276A patent/EP0977911A4/en not_active Ceased
- 1998-03-30 AU AU67869/98A patent/AU6786998A/en not_active Abandoned
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1997022152A1 (en) * | 1995-12-12 | 1997-06-19 | Davis, Joseph & Negley | PREPARATION OF CuxInyGazSen (x=0-2, y=0-2, z=0-2, n=0-3) PRECURSOR FILMS BY ELECTRODEPOSITION FOR FABRICATING HIGH EFFICIENCY SOLAR CELLS |
Non-Patent Citations (2)
Title |
---|
R. N. BHATTACHARYA C.S.: "12.3 % Efficient CuIn1-xGaxSe2-Based Device from Electrodeposited Precursor", J. ELECTROCHEM. SOC., vol. 144, no. 4, April 1997 (1997-04-01), pages 1376 - 1379, XP002189137 * |
See also references of WO9848079A1 * |
Also Published As
Publication number | Publication date |
---|---|
CA2284826A1 (en) | 1998-10-29 |
EP0977911A1 (en) | 2000-02-09 |
CA2284826C (en) | 2007-06-05 |
WO1998048079A1 (en) | 1998-10-29 |
AU6786998A (en) | 1998-11-13 |
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