DE69940335D1 - Vorrichtung und Verfahren zum zerstörungsfreien Prüfen einer Halbleiteranordnung - Google Patents

Vorrichtung und Verfahren zum zerstörungsfreien Prüfen einer Halbleiteranordnung

Info

Publication number
DE69940335D1
DE69940335D1 DE69940335T DE69940335T DE69940335D1 DE 69940335 D1 DE69940335 D1 DE 69940335D1 DE 69940335 T DE69940335 T DE 69940335T DE 69940335 T DE69940335 T DE 69940335T DE 69940335 D1 DE69940335 D1 DE 69940335D1
Authority
DE
Germany
Prior art keywords
semiconductor device
destructive testing
destructive
testing
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69940335T
Other languages
English (en)
Inventor
Kiyoshi Nikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Original Assignee
NEC Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP06774499A external-priority patent/JP3450212B2/ja
Priority claimed from JP13328399A external-priority patent/JP3652170B2/ja
Application filed by NEC Electronics Corp filed Critical NEC Electronics Corp
Application granted granted Critical
Publication of DE69940335D1 publication Critical patent/DE69940335D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G01R31/311—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation of integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Tests Of Electronic Circuits (AREA)
DE69940335T 1998-09-28 1999-09-24 Vorrichtung und Verfahren zum zerstörungsfreien Prüfen einer Halbleiteranordnung Expired - Fee Related DE69940335D1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP27278898 1998-09-28
JP06774499A JP3450212B2 (ja) 1999-03-15 1999-03-15 非破壊検査用半導体デバイスおよびその製造方法ならびに非破壊検査方法および非破壊検査装置
JP13328399A JP3652170B2 (ja) 1999-05-13 1999-05-13 非破壊検査方法

Publications (1)

Publication Number Publication Date
DE69940335D1 true DE69940335D1 (de) 2009-03-12

Family

ID=27299540

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69940335T Expired - Fee Related DE69940335D1 (de) 1998-09-28 1999-09-24 Vorrichtung und Verfahren zum zerstörungsfreien Prüfen einer Halbleiteranordnung

Country Status (6)

Country Link
US (3) US6444895B1 (de)
EP (2) EP0990918B1 (de)
KR (3) KR100344857B1 (de)
CN (3) CN1276493C (de)
DE (1) DE69940335D1 (de)
TW (1) TWI227532B (de)

Families Citing this family (78)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3350477B2 (ja) * 1999-04-02 2002-11-25 セイコーインスツルメンツ株式会社 ウエハ検査装置
TW528874B (en) * 2000-10-26 2003-04-21 Nec Electronics Corp Non-destructive inspection method
US6844203B2 (en) * 2001-08-30 2005-01-18 Micron Technology, Inc. Gate oxides, and methods of forming
US8026161B2 (en) 2001-08-30 2011-09-27 Micron Technology, Inc. Highly reliable amorphous high-K gate oxide ZrO2
DE50205841D1 (de) * 2001-11-02 2006-04-20 Atmel Germany Gmbh Verfahren zum offnen eines kunststoffgehauses einer elektronischen baugruppe
US6953730B2 (en) * 2001-12-20 2005-10-11 Micron Technology, Inc. Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics
US6767795B2 (en) 2002-01-17 2004-07-27 Micron Technology, Inc. Highly reliable amorphous high-k gate dielectric ZrOXNY
US6812100B2 (en) 2002-03-13 2004-11-02 Micron Technology, Inc. Evaporation of Y-Si-O films for medium-k dielectrics
US7160577B2 (en) 2002-05-02 2007-01-09 Micron Technology, Inc. Methods for atomic-layer deposition of aluminum oxides in integrated circuits
US6804136B2 (en) * 2002-06-21 2004-10-12 Micron Technology, Inc. Write once read only memory employing charge trapping in insulators
US6970370B2 (en) * 2002-06-21 2005-11-29 Micron Technology, Inc. Ferroelectric write once read only memory for archival storage
US7221586B2 (en) 2002-07-08 2007-05-22 Micron Technology, Inc. Memory utilizing oxide nanolaminates
US7221017B2 (en) 2002-07-08 2007-05-22 Micron Technology, Inc. Memory utilizing oxide-conductor nanolaminates
US20040036129A1 (en) * 2002-08-22 2004-02-26 Micron Technology, Inc. Atomic layer deposition of CMOS gates with variable work functions
US6967154B2 (en) * 2002-08-26 2005-11-22 Micron Technology, Inc. Enhanced atomic layer deposition
JP4526765B2 (ja) * 2003-01-20 2010-08-18 浜松ホトニクス株式会社 ビーム照射加熱抵抗変化測定装置
JP4334927B2 (ja) * 2003-06-27 2009-09-30 キヤノン株式会社 半導体レーザーダイオードチップの検査方法および検査装置
JP4136832B2 (ja) * 2003-07-15 2008-08-20 キヤノン株式会社 半導体レーザーダイオードチップの検査方法および検査装置
US7019521B2 (en) * 2003-09-15 2006-03-28 Neocera, Inc. Fault isolation of circuit defects using comparative magnetic field imaging
US6955932B2 (en) * 2003-10-29 2005-10-18 International Business Machines Corporation Single and double-gate pseudo-FET devices for semiconductor materials evaluation
JP2005134196A (ja) * 2003-10-29 2005-05-26 Nec Electronics Corp 非破壊解析方法及び非破壊解析装置
JP4521611B2 (ja) * 2004-04-09 2010-08-11 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
US7202689B2 (en) * 2005-04-15 2007-04-10 International Business Machines Corporation Sensor differentiated fault isolation
CN100465612C (zh) * 2005-06-10 2009-03-04 联华电子股份有限公司 缺陷检测方法
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
TWI513989B (zh) * 2005-09-13 2015-12-21 Ebara Corp 半導體裝置
JP2007127499A (ja) * 2005-11-02 2007-05-24 Nec Electronics Corp 非破壊検査装置および非破壊検査方法
US7711406B2 (en) * 2005-11-23 2010-05-04 General Electric Company System and method for detection of electromagnetic radiation by amorphous silicon x-ray detector for metal detection in x-ray imaging
US7709402B2 (en) 2006-02-16 2010-05-04 Micron Technology, Inc. Conductive layers for hafnium silicon oxynitride films
JP5054949B2 (ja) * 2006-09-06 2012-10-24 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
WO2008062341A1 (en) * 2006-11-20 2008-05-29 Nxp B.V. A method of optically inspecting an integrated circuit through a lens
KR100781381B1 (ko) * 2006-12-15 2007-11-30 (주)제이티 반도체소자 검사장치 및 반도체소자 검사방법
JP2009008626A (ja) 2007-06-29 2009-01-15 Nec Electronics Corp 故障解析方法及び故障解析装置
CN101581760B (zh) * 2007-08-03 2011-05-11 重庆大学 一种led芯片/晶圆的非接触式检测方法
WO2009026520A1 (en) * 2007-08-23 2009-02-26 3D Systems, Inc. Automatic geometric calibration using laser scanning reflectometry
KR100905782B1 (ko) * 2007-10-10 2009-07-02 주식회사 하이닉스반도체 반도체 패키지의 비파괴-파괴 검사 방법 및 장치
US8809779B2 (en) * 2008-12-19 2014-08-19 Hermes Microvision, Inc. Method and system for heating substrate in vacuum environment and method and system for identifying defects on substrate
EP2380015A4 (de) 2008-12-30 2016-10-26 Sikorsky Aircraft Corp Nichtdestruktives inspektionsverfahren mit objektiver bewertung
US20100279438A1 (en) * 2009-05-01 2010-11-04 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method of in-situ identification for contamination control in semiconductor fabrication
CN101894763B (zh) * 2009-05-19 2011-09-07 中芯国际集成电路制造(上海)有限公司 一种芯片装配方法
FR2946460A1 (fr) * 2009-06-04 2010-12-10 St Microelectronics Rousset Procede de generation d'energie electrique dans un circuit integre lors du fonctionnement de celui-ci, circuit integre correspondant et procede de fabrication
US7799666B1 (en) * 2009-07-27 2010-09-21 Potomac Photonics, Inc. Method of spatially selective laser-assisted doping of a semiconductor
EP2467703A1 (de) * 2009-08-17 2012-06-27 Nanda Technologies GmbH Verfahren zur inspektion und verarbeitung von halbleiterwafern
JP2011254021A (ja) * 2010-06-03 2011-12-15 Sumitomo Electric Ind Ltd 半導体装置の製造方法
CN102455394A (zh) * 2010-10-27 2012-05-16 上海华虹集成电路有限责任公司 防御侵入式攻击的装置
CN102466778B (zh) * 2010-11-17 2014-04-16 上海华虹宏力半导体制造有限公司 用于功率金属氧化物晶体管芯片的缺陷失效定位方法
US9911836B2 (en) 2011-02-25 2018-03-06 Qorvo Us, Inc. Vertical ballast technology for power HBT device
US9897512B2 (en) * 2011-04-15 2018-02-20 Qorvo Us, Inc. Laminate variables measured electrically
FR2978831A1 (fr) * 2011-08-05 2013-02-08 St Microelectronics Sa Detection de defauts par imagerie thermique frequentielle.
CN103594393B (zh) * 2012-08-17 2016-05-11 南通富士通微电子股份有限公司 芯片防反装置
JP6359640B2 (ja) * 2013-04-26 2018-07-18 ユナイテッド テクノロジーズ コーポレイションＵｎｉｔｅｄ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｃｏｒｐｏｒａｔｉｏｎ 選択的レーザー溶融システム
US9523729B2 (en) * 2013-09-13 2016-12-20 Infineon Technologies Ag Apparatus and method for testing electric conductors
CN103487556B (zh) * 2013-10-07 2015-10-28 复旦大学 一种超导相显微***
CN104316856B (zh) * 2014-10-29 2017-06-23 上海华力微电子有限公司 背面探测式光子辐射显微镜装置及测试方法
TW201704766A (zh) 2015-03-19 2017-02-01 帝喜科技股份有限公司 加熱粒子束以識別缺陷
CN105092909B (zh) * 2015-08-11 2018-01-26 上海华力微电子有限公司 弯折探针及其治具
CN108138975B (zh) 2015-10-12 2019-08-09 伯克哈特压缩机股份公司 提升阀
JP6632327B2 (ja) * 2015-10-30 2020-01-22 浜松ホトニクス株式会社 画像生成方法、画像生成装置、画像生成プログラム及び記録媒体
JP6940413B2 (ja) * 2015-12-03 2021-09-29 浜松ホトニクス株式会社 検査装置及び検査方法
CN105870033B (zh) * 2016-05-06 2019-04-05 中国科学院物理研究所 一种半导体抛光晶片表面划痕的检测方法
FR3053469B1 (fr) * 2016-06-30 2018-08-17 Areva Np Procede d'inspection d'une surface metallique et dispositif associe
CN106226606B (zh) * 2016-07-08 2018-10-02 北京航空航天大学 一种通过改变辐射源工作频率研究电磁场探头微扰动性的方法
CN106154057B (zh) * 2016-07-08 2018-08-31 北京航空航天大学 一种通过改变电磁场探头位置研究探头微扰动性的方法
CN106546415A (zh) * 2016-11-09 2017-03-29 石长海 一种石英晶片（块）非接触式检测正负极性的工具
RU2654935C1 (ru) * 2016-12-19 2018-05-23 Федеральное государственное бюджетное образовательное учреждение высшего образования "Рязанский государственный радиотехнический университет" Способ бесконтактного определения квантованного холловского сопротивления полупроводников и устройство для его осуществления
WO2018212087A1 (ja) * 2017-05-15 2018-11-22 三菱電機株式会社 欠陥検査装置および欠陥検査方法
US10310027B2 (en) * 2017-06-16 2019-06-04 The Aerospace Corporation Systems and methods for detecting current using a kinetic inductance magnetic current imager
WO2019028017A1 (en) * 2017-08-01 2019-02-07 Applied Materials Israel Ltd. EMPTY DETECTION METHOD AND INSPECTION SYSTEM
CN110362127B (zh) * 2018-04-11 2021-03-02 北京北方华创微电子装备有限公司 晶片温度控制方法及温度控制***、半导体处理设备
CN109613016A (zh) * 2018-12-04 2019-04-12 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） 一种半导体芯片缺陷检测设备及方法
US11397228B2 (en) * 2018-12-26 2022-07-26 Khalifa University of Science and Technology High-resolution UHF near-field imaging probe
TWI827809B (zh) * 2019-04-04 2024-01-01 丹麥商卡普雷斯股份有限公司 測量測試樣本之電性的方法，以及多層測試樣本
CN110231344A (zh) * 2019-07-17 2019-09-13 佛山市清极能源科技有限公司 一种膜电极缺陷快速筛拣方法及设备
JP7323127B2 (ja) * 2020-02-10 2023-08-08 株式会社アドバンテスト 試験装置
CN111975191B (zh) * 2020-08-17 2023-01-24 北京中科镭特电子有限公司 一种加工腔组件及激光加工装置
TWI738568B (zh) * 2020-11-18 2021-09-01 汎銓科技股份有限公司 一種故障分析用的半導體試片的製備方法
CN113432835B (zh) * 2021-06-03 2023-06-13 厦门特仪科技有限公司 一种多腔体高低温测试装置及具其***
CN114216869B (zh) * 2021-10-19 2024-06-18 华灿光电（浙江）有限公司 晶圆掺杂检测***及检测方法

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4265117A (en) * 1979-01-26 1981-05-05 Thoma Paul E Surface temperature detecting apparatus
JPS5670642A (en) * 1979-11-15 1981-06-12 Nec Corp Semiconductor device
US5055140A (en) * 1987-10-05 1991-10-08 Murata Mfg. Co., Ltd. Thermoelectric element using semiconductive ceramic material
US4796432A (en) 1987-10-09 1989-01-10 Unisys Corporation Long hold time cryogens dewar
JPH02284439A (ja) 1989-04-26 1990-11-21 Hitachi Ltd 半導体装置およびその検査方法
JPH0464625A (ja) 1990-07-04 1992-02-28 Daicel Chem Ind Ltd 掘削土砂のポンプ圧送用添加剤
JPH04312942A (ja) 1991-03-25 1992-11-04 Mitsubishi Electric Corp Ｏｂｉｃ電流検出方法
US5156688A (en) * 1991-06-05 1992-10-20 Xerox Corporation Thermoelectric device
JPH04369849A (ja) 1991-06-18 1992-12-22 Mitsubishi Electric Corp 半導体集積回路装置
JPH0547929A (ja) 1991-08-14 1993-02-26 Hitachi Micom Syst:Kk 自動配置配線方法
JPH05136240A (ja) 1991-11-14 1993-06-01 Mitsubishi Electric Corp Ｏｂｉｃ観察方法およびその装置
JPH05243535A (ja) 1992-03-03 1993-09-21 Kawasaki Steel Corp 半導体集積回路及びその設計方法
JP3042148B2 (ja) * 1992-03-23 2000-05-15 株式会社島津製作所 直交３軸ピックアップコイル
US5422498A (en) * 1993-04-13 1995-06-06 Nec Corporation Apparatus for diagnosing interconnections of semiconductor integrated circuits
JP2518540B2 (ja) 1993-12-14 1996-07-24 日本電気株式会社 半導体集積回路内部相互配線の検査装置
JPH0714898A (ja) 1993-06-23 1995-01-17 Mitsubishi Electric Corp 半導体ウエハの試験解析装置および解析方法
JP2718370B2 (ja) * 1994-07-29 1998-02-25 日本電気株式会社 配線ショート箇所検出方法および配線ショート箇所検出装置
JP2710228B2 (ja) * 1994-08-11 1998-02-10 日本電気株式会社 ボロメータ型赤外線検知素子、その駆動方法、および検出用積分回路
US5708371A (en) * 1995-03-16 1998-01-13 Mitsubishi Denki Kabushiki Kaisha Scanning photoinduced current analyzer capable of detecting photoinduced current in nonbiased specimen
JPH08316281A (ja) 1995-05-15 1996-11-29 Sony Corp 欠陥検査装置
US5772325A (en) * 1995-11-20 1998-06-30 Motorola, Inc. Apparatus for providing surface images and method for making the apparatus
JP2850816B2 (ja) * 1995-12-18 1999-01-27 日本電気株式会社 バンプ接合検査装置及び検査方法
RU2115897C1 (ru) * 1996-07-23 1998-07-20 Научно-исследовательский институт физических измерений Интегральный преобразователь деформации и температуры
DE19725679A1 (de) 1997-06-18 1999-01-28 Innomess Elektronik Gmbh Verfahren und Vorrichtung zur Bestimmung der elektrischen Inhomogenität von Halbleitern
JPH10170612A (ja) 1997-10-23 1998-06-26 Nec Corp 半導体集積回路内部相互配線の検査方法および装置

Also Published As

Publication number Publication date
KR100344857B1 (ko) 2002-07-19
EP1580567A2 (de) 2005-09-28
CN1571136A (zh) 2005-01-26
CN100345271C (zh) 2007-10-24
CN100338753C (zh) 2007-09-19
EP0990918A2 (de) 2000-04-05
US20020106820A1 (en) 2002-08-08
CN1276493C (zh) 2006-09-20
EP0990918B1 (de) 2009-01-21
KR20000023498A (ko) 2000-04-25
EP0990918A3 (de) 2002-08-28
EP1580567A3 (de) 2006-11-29
US6759259B2 (en) 2004-07-06
KR20010107826A (ko) 2001-12-07
CN1571135A (zh) 2005-01-26
TWI227532B (en) 2005-02-01
US20020105577A1 (en) 2002-08-08
KR100363926B1 (ko) 2002-12-11
KR100377990B1 (ko) 2003-03-29
KR20010107825A (ko) 2001-12-07
US6444895B1 (en) 2002-09-03
CN1249535A (zh) 2000-04-05
US6610918B2 (en) 2003-08-26

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