DE69940335D1 - Vorrichtung und Verfahren zum zerstörungsfreien Prüfen einer Halbleiteranordnung - Google Patents
Vorrichtung und Verfahren zum zerstörungsfreien Prüfen einer HalbleiteranordnungInfo
- Publication number
- DE69940335D1 DE69940335D1 DE69940335T DE69940335T DE69940335D1 DE 69940335 D1 DE69940335 D1 DE 69940335D1 DE 69940335 T DE69940335 T DE 69940335T DE 69940335 T DE69940335 T DE 69940335T DE 69940335 D1 DE69940335 D1 DE 69940335D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor device
- destructive testing
- destructive
- testing
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/302—Contactless testing
- G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
- G01R31/311—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation of integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Tests Of Electronic Circuits (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27278898 | 1998-09-28 | ||
JP06774499A JP3450212B2 (ja) | 1999-03-15 | 1999-03-15 | 非破壊検査用半導体デバイスおよびその製造方法ならびに非破壊検査方法および非破壊検査装置 |
JP13328399A JP3652170B2 (ja) | 1999-05-13 | 1999-05-13 | 非破壊検査方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE69940335D1 true DE69940335D1 (de) | 2009-03-12 |
Family
ID=27299540
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69940335T Expired - Fee Related DE69940335D1 (de) | 1998-09-28 | 1999-09-24 | Vorrichtung und Verfahren zum zerstörungsfreien Prüfen einer Halbleiteranordnung |
Country Status (6)
Country | Link |
---|---|
US (3) | US6444895B1 (de) |
EP (2) | EP0990918B1 (de) |
KR (3) | KR100344857B1 (de) |
CN (3) | CN1276493C (de) |
DE (1) | DE69940335D1 (de) |
TW (1) | TWI227532B (de) |
Families Citing this family (78)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3350477B2 (ja) * | 1999-04-02 | 2002-11-25 | セイコーインスツルメンツ株式会社 | ウエハ検査装置 |
TW528874B (en) * | 2000-10-26 | 2003-04-21 | Nec Electronics Corp | Non-destructive inspection method |
US6844203B2 (en) * | 2001-08-30 | 2005-01-18 | Micron Technology, Inc. | Gate oxides, and methods of forming |
US8026161B2 (en) | 2001-08-30 | 2011-09-27 | Micron Technology, Inc. | Highly reliable amorphous high-K gate oxide ZrO2 |
DE50205841D1 (de) * | 2001-11-02 | 2006-04-20 | Atmel Germany Gmbh | Verfahren zum offnen eines kunststoffgehauses einer elektronischen baugruppe |
US6953730B2 (en) * | 2001-12-20 | 2005-10-11 | Micron Technology, Inc. | Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics |
US6767795B2 (en) | 2002-01-17 | 2004-07-27 | Micron Technology, Inc. | Highly reliable amorphous high-k gate dielectric ZrOXNY |
US6812100B2 (en) | 2002-03-13 | 2004-11-02 | Micron Technology, Inc. | Evaporation of Y-Si-O films for medium-k dielectrics |
US7160577B2 (en) | 2002-05-02 | 2007-01-09 | Micron Technology, Inc. | Methods for atomic-layer deposition of aluminum oxides in integrated circuits |
US6804136B2 (en) * | 2002-06-21 | 2004-10-12 | Micron Technology, Inc. | Write once read only memory employing charge trapping in insulators |
US6970370B2 (en) * | 2002-06-21 | 2005-11-29 | Micron Technology, Inc. | Ferroelectric write once read only memory for archival storage |
US7221586B2 (en) | 2002-07-08 | 2007-05-22 | Micron Technology, Inc. | Memory utilizing oxide nanolaminates |
US7221017B2 (en) | 2002-07-08 | 2007-05-22 | Micron Technology, Inc. | Memory utilizing oxide-conductor nanolaminates |
US20040036129A1 (en) * | 2002-08-22 | 2004-02-26 | Micron Technology, Inc. | Atomic layer deposition of CMOS gates with variable work functions |
US6967154B2 (en) * | 2002-08-26 | 2005-11-22 | Micron Technology, Inc. | Enhanced atomic layer deposition |
JP4526765B2 (ja) * | 2003-01-20 | 2010-08-18 | 浜松ホトニクス株式会社 | ビーム照射加熱抵抗変化測定装置 |
JP4334927B2 (ja) * | 2003-06-27 | 2009-09-30 | キヤノン株式会社 | 半導体レーザーダイオードチップの検査方法および検査装置 |
JP4136832B2 (ja) * | 2003-07-15 | 2008-08-20 | キヤノン株式会社 | 半導体レーザーダイオードチップの検査方法および検査装置 |
US7019521B2 (en) * | 2003-09-15 | 2006-03-28 | Neocera, Inc. | Fault isolation of circuit defects using comparative magnetic field imaging |
US6955932B2 (en) * | 2003-10-29 | 2005-10-18 | International Business Machines Corporation | Single and double-gate pseudo-FET devices for semiconductor materials evaluation |
JP2005134196A (ja) * | 2003-10-29 | 2005-05-26 | Nec Electronics Corp | 非破壊解析方法及び非破壊解析装置 |
JP4521611B2 (ja) * | 2004-04-09 | 2010-08-11 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置の製造方法 |
US7202689B2 (en) * | 2005-04-15 | 2007-04-10 | International Business Machines Corporation | Sensor differentiated fault isolation |
CN100465612C (zh) * | 2005-06-10 | 2009-03-04 | 联华电子股份有限公司 | 缺陷检测方法 |
US7927948B2 (en) | 2005-07-20 | 2011-04-19 | Micron Technology, Inc. | Devices with nanocrystals and methods of formation |
TWI513989B (zh) * | 2005-09-13 | 2015-12-21 | Ebara Corp | 半導體裝置 |
JP2007127499A (ja) * | 2005-11-02 | 2007-05-24 | Nec Electronics Corp | 非破壊検査装置および非破壊検査方法 |
US7711406B2 (en) * | 2005-11-23 | 2010-05-04 | General Electric Company | System and method for detection of electromagnetic radiation by amorphous silicon x-ray detector for metal detection in x-ray imaging |
US7709402B2 (en) | 2006-02-16 | 2010-05-04 | Micron Technology, Inc. | Conductive layers for hafnium silicon oxynitride films |
JP5054949B2 (ja) * | 2006-09-06 | 2012-10-24 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
WO2008062341A1 (en) * | 2006-11-20 | 2008-05-29 | Nxp B.V. | A method of optically inspecting an integrated circuit through a lens |
KR100781381B1 (ko) * | 2006-12-15 | 2007-11-30 | (주)제이티 | 반도체소자 검사장치 및 반도체소자 검사방법 |
JP2009008626A (ja) | 2007-06-29 | 2009-01-15 | Nec Electronics Corp | 故障解析方法及び故障解析装置 |
CN101581760B (zh) * | 2007-08-03 | 2011-05-11 | 重庆大学 | 一种led芯片/晶圆的非接触式检测方法 |
WO2009026520A1 (en) * | 2007-08-23 | 2009-02-26 | 3D Systems, Inc. | Automatic geometric calibration using laser scanning reflectometry |
KR100905782B1 (ko) * | 2007-10-10 | 2009-07-02 | 주식회사 하이닉스반도체 | 반도체 패키지의 비파괴-파괴 검사 방법 및 장치 |
US8809779B2 (en) * | 2008-12-19 | 2014-08-19 | Hermes Microvision, Inc. | Method and system for heating substrate in vacuum environment and method and system for identifying defects on substrate |
EP2380015A4 (de) | 2008-12-30 | 2016-10-26 | Sikorsky Aircraft Corp | Nichtdestruktives inspektionsverfahren mit objektiver bewertung |
US20100279438A1 (en) * | 2009-05-01 | 2010-11-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method of in-situ identification for contamination control in semiconductor fabrication |
CN101894763B (zh) * | 2009-05-19 | 2011-09-07 | 中芯国际集成电路制造(上海)有限公司 | 一种芯片装配方法 |
FR2946460A1 (fr) * | 2009-06-04 | 2010-12-10 | St Microelectronics Rousset | Procede de generation d'energie electrique dans un circuit integre lors du fonctionnement de celui-ci, circuit integre correspondant et procede de fabrication |
US7799666B1 (en) * | 2009-07-27 | 2010-09-21 | Potomac Photonics, Inc. | Method of spatially selective laser-assisted doping of a semiconductor |
EP2467703A1 (de) * | 2009-08-17 | 2012-06-27 | Nanda Technologies GmbH | Verfahren zur inspektion und verarbeitung von halbleiterwafern |
JP2011254021A (ja) * | 2010-06-03 | 2011-12-15 | Sumitomo Electric Ind Ltd | 半導体装置の製造方法 |
CN102455394A (zh) * | 2010-10-27 | 2012-05-16 | 上海华虹集成电路有限责任公司 | 防御侵入式攻击的装置 |
CN102466778B (zh) * | 2010-11-17 | 2014-04-16 | 上海华虹宏力半导体制造有限公司 | 用于功率金属氧化物晶体管芯片的缺陷失效定位方法 |
US9911836B2 (en) | 2011-02-25 | 2018-03-06 | Qorvo Us, Inc. | Vertical ballast technology for power HBT device |
US9897512B2 (en) * | 2011-04-15 | 2018-02-20 | Qorvo Us, Inc. | Laminate variables measured electrically |
FR2978831A1 (fr) * | 2011-08-05 | 2013-02-08 | St Microelectronics Sa | Detection de defauts par imagerie thermique frequentielle. |
CN103594393B (zh) * | 2012-08-17 | 2016-05-11 | 南通富士通微电子股份有限公司 | 芯片防反装置 |
JP6359640B2 (ja) * | 2013-04-26 | 2018-07-18 | ユナイテッド テクノロジーズ コーポレイションUnited Technologies Corporation | 選択的レーザー溶融システム |
US9523729B2 (en) * | 2013-09-13 | 2016-12-20 | Infineon Technologies Ag | Apparatus and method for testing electric conductors |
CN103487556B (zh) * | 2013-10-07 | 2015-10-28 | 复旦大学 | 一种超导相显微*** |
CN104316856B (zh) * | 2014-10-29 | 2017-06-23 | 上海华力微电子有限公司 | 背面探测式光子辐射显微镜装置及测试方法 |
TW201704766A (zh) | 2015-03-19 | 2017-02-01 | 帝喜科技股份有限公司 | 加熱粒子束以識別缺陷 |
CN105092909B (zh) * | 2015-08-11 | 2018-01-26 | 上海华力微电子有限公司 | 弯折探针及其治具 |
CN108138975B (zh) | 2015-10-12 | 2019-08-09 | 伯克哈特压缩机股份公司 | 提升阀 |
JP6632327B2 (ja) * | 2015-10-30 | 2020-01-22 | 浜松ホトニクス株式会社 | 画像生成方法、画像生成装置、画像生成プログラム及び記録媒体 |
JP6940413B2 (ja) * | 2015-12-03 | 2021-09-29 | 浜松ホトニクス株式会社 | 検査装置及び検査方法 |
CN105870033B (zh) * | 2016-05-06 | 2019-04-05 | 中国科学院物理研究所 | 一种半导体抛光晶片表面划痕的检测方法 |
FR3053469B1 (fr) * | 2016-06-30 | 2018-08-17 | Areva Np | Procede d'inspection d'une surface metallique et dispositif associe |
CN106226606B (zh) * | 2016-07-08 | 2018-10-02 | 北京航空航天大学 | 一种通过改变辐射源工作频率研究电磁场探头微扰动性的方法 |
CN106154057B (zh) * | 2016-07-08 | 2018-08-31 | 北京航空航天大学 | 一种通过改变电磁场探头位置研究探头微扰动性的方法 |
CN106546415A (zh) * | 2016-11-09 | 2017-03-29 | 石长海 | 一种石英晶片(块)非接触式检测正负极性的工具 |
RU2654935C1 (ru) * | 2016-12-19 | 2018-05-23 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Рязанский государственный радиотехнический университет" | Способ бесконтактного определения квантованного холловского сопротивления полупроводников и устройство для его осуществления |
WO2018212087A1 (ja) * | 2017-05-15 | 2018-11-22 | 三菱電機株式会社 | 欠陥検査装置および欠陥検査方法 |
US10310027B2 (en) * | 2017-06-16 | 2019-06-04 | The Aerospace Corporation | Systems and methods for detecting current using a kinetic inductance magnetic current imager |
WO2019028017A1 (en) * | 2017-08-01 | 2019-02-07 | Applied Materials Israel Ltd. | EMPTY DETECTION METHOD AND INSPECTION SYSTEM |
CN110362127B (zh) * | 2018-04-11 | 2021-03-02 | 北京北方华创微电子装备有限公司 | 晶片温度控制方法及温度控制***、半导体处理设备 |
CN109613016A (zh) * | 2018-12-04 | 2019-04-12 | 中国电子产品可靠性与环境试验研究所((工业和信息化部电子第五研究所)(中国赛宝实验室)) | 一种半导体芯片缺陷检测设备及方法 |
US11397228B2 (en) * | 2018-12-26 | 2022-07-26 | Khalifa University of Science and Technology | High-resolution UHF near-field imaging probe |
TWI827809B (zh) * | 2019-04-04 | 2024-01-01 | 丹麥商卡普雷斯股份有限公司 | 測量測試樣本之電性的方法,以及多層測試樣本 |
CN110231344A (zh) * | 2019-07-17 | 2019-09-13 | 佛山市清极能源科技有限公司 | 一种膜电极缺陷快速筛拣方法及设备 |
JP7323127B2 (ja) * | 2020-02-10 | 2023-08-08 | 株式会社アドバンテスト | 試験装置 |
CN111975191B (zh) * | 2020-08-17 | 2023-01-24 | 北京中科镭特电子有限公司 | 一种加工腔组件及激光加工装置 |
TWI738568B (zh) * | 2020-11-18 | 2021-09-01 | 汎銓科技股份有限公司 | 一種故障分析用的半導體試片的製備方法 |
CN113432835B (zh) * | 2021-06-03 | 2023-06-13 | 厦门特仪科技有限公司 | 一种多腔体高低温测试装置及具其*** |
CN114216869B (zh) * | 2021-10-19 | 2024-06-18 | 华灿光电(浙江)有限公司 | 晶圆掺杂检测***及检测方法 |
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US4265117A (en) * | 1979-01-26 | 1981-05-05 | Thoma Paul E | Surface temperature detecting apparatus |
JPS5670642A (en) * | 1979-11-15 | 1981-06-12 | Nec Corp | Semiconductor device |
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JPH02284439A (ja) | 1989-04-26 | 1990-11-21 | Hitachi Ltd | 半導体装置およびその検査方法 |
JPH0464625A (ja) | 1990-07-04 | 1992-02-28 | Daicel Chem Ind Ltd | 掘削土砂のポンプ圧送用添加剤 |
JPH04312942A (ja) | 1991-03-25 | 1992-11-04 | Mitsubishi Electric Corp | Obic電流検出方法 |
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JP2518540B2 (ja) | 1993-12-14 | 1996-07-24 | 日本電気株式会社 | 半導体集積回路内部相互配線の検査装置 |
JPH0714898A (ja) | 1993-06-23 | 1995-01-17 | Mitsubishi Electric Corp | 半導体ウエハの試験解析装置および解析方法 |
JP2718370B2 (ja) * | 1994-07-29 | 1998-02-25 | 日本電気株式会社 | 配線ショート箇所検出方法および配線ショート箇所検出装置 |
JP2710228B2 (ja) * | 1994-08-11 | 1998-02-10 | 日本電気株式会社 | ボロメータ型赤外線検知素子、その駆動方法、および検出用積分回路 |
US5708371A (en) * | 1995-03-16 | 1998-01-13 | Mitsubishi Denki Kabushiki Kaisha | Scanning photoinduced current analyzer capable of detecting photoinduced current in nonbiased specimen |
JPH08316281A (ja) | 1995-05-15 | 1996-11-29 | Sony Corp | 欠陥検査装置 |
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JP2850816B2 (ja) * | 1995-12-18 | 1999-01-27 | 日本電気株式会社 | バンプ接合検査装置及び検査方法 |
RU2115897C1 (ru) * | 1996-07-23 | 1998-07-20 | Научно-исследовательский институт физических измерений | Интегральный преобразователь деформации и температуры |
DE19725679A1 (de) | 1997-06-18 | 1999-01-28 | Innomess Elektronik Gmbh | Verfahren und Vorrichtung zur Bestimmung der elektrischen Inhomogenität von Halbleitern |
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-
1999
- 1999-09-24 EP EP99118870A patent/EP0990918B1/de not_active Expired - Lifetime
- 1999-09-24 US US09/407,221 patent/US6444895B1/en not_active Expired - Fee Related
- 1999-09-24 EP EP05014161A patent/EP1580567A3/de not_active Withdrawn
- 1999-09-24 DE DE69940335T patent/DE69940335D1/de not_active Expired - Fee Related
- 1999-09-27 TW TW088116669A patent/TWI227532B/zh not_active IP Right Cessation
- 1999-09-28 KR KR1019990041580A patent/KR100344857B1/ko not_active IP Right Cessation
- 1999-09-28 CN CNB991197097A patent/CN1276493C/zh not_active Expired - Fee Related
- 1999-09-28 CN CNB2004100560673A patent/CN100338753C/zh not_active Expired - Fee Related
- 1999-09-28 CN CNB2004100560688A patent/CN100345271C/zh not_active Expired - Fee Related
-
2001
- 2001-10-24 KR KR10-2001-0065825A patent/KR100377990B1/ko not_active IP Right Cessation
- 2001-10-24 KR KR1020010065826A patent/KR100363926B1/ko not_active IP Right Cessation
-
2002
- 2002-03-12 US US10/095,915 patent/US6759259B2/en not_active Expired - Fee Related
- 2002-03-12 US US10/095,858 patent/US6610918B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR100344857B1 (ko) | 2002-07-19 |
EP1580567A2 (de) | 2005-09-28 |
CN1571136A (zh) | 2005-01-26 |
CN100345271C (zh) | 2007-10-24 |
CN100338753C (zh) | 2007-09-19 |
EP0990918A2 (de) | 2000-04-05 |
US20020106820A1 (en) | 2002-08-08 |
CN1276493C (zh) | 2006-09-20 |
EP0990918B1 (de) | 2009-01-21 |
KR20000023498A (ko) | 2000-04-25 |
EP0990918A3 (de) | 2002-08-28 |
EP1580567A3 (de) | 2006-11-29 |
US6759259B2 (en) | 2004-07-06 |
KR20010107826A (ko) | 2001-12-07 |
CN1571135A (zh) | 2005-01-26 |
TWI227532B (en) | 2005-02-01 |
US20020105577A1 (en) | 2002-08-08 |
KR100363926B1 (ko) | 2002-12-11 |
KR100377990B1 (ko) | 2003-03-29 |
KR20010107825A (ko) | 2001-12-07 |
US6444895B1 (en) | 2002-09-03 |
CN1249535A (zh) | 2000-04-05 |
US6610918B2 (en) | 2003-08-26 |
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