DE69906901D1 - Zusammensetzung für eine Antireflexunterschicht für einen Photoresist und Verfahren zur Erzeugung eines Resistmusters - Google Patents
Zusammensetzung für eine Antireflexunterschicht für einen Photoresist und Verfahren zur Erzeugung eines ResistmustersInfo
- Publication number
- DE69906901D1 DE69906901D1 DE69906901T DE69906901T DE69906901D1 DE 69906901 D1 DE69906901 D1 DE 69906901D1 DE 69906901 T DE69906901 T DE 69906901T DE 69906901 T DE69906901 T DE 69906901T DE 69906901 D1 DE69906901 D1 DE 69906901D1
- Authority
- DE
- Germany
- Prior art keywords
- photoresist
- forming
- resist pattern
- undercoat composition
- antireflective
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Materials For Photolithography (AREA)
- Paints Or Removers (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27004298A JP3852889B2 (ja) | 1998-09-24 | 1998-09-24 | フォトレジスト用反射防止膜材料組成物 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69906901D1 true DE69906901D1 (de) | 2003-05-22 |
DE69906901T2 DE69906901T2 (de) | 2003-11-27 |
Family
ID=17480729
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69906901T Expired - Lifetime DE69906901T2 (de) | 1998-09-24 | 1999-09-22 | Zusammensetzung für eine Antireflexunterschicht für einen Photoresist und Verfahren zur Erzeugung eines Resistmusters |
Country Status (5)
Country | Link |
---|---|
US (1) | US6399269B2 (de) |
EP (1) | EP0989463B1 (de) |
JP (1) | JP3852889B2 (de) |
KR (1) | KR100624044B1 (de) |
DE (1) | DE69906901T2 (de) |
Families Citing this family (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1129390A1 (de) * | 1998-11-12 | 2001-09-05 | Andrew Michael Thompson | Grundierungszusammensetzung, um einen fotolack auf einem substrat zu binden |
US6316165B1 (en) * | 1999-03-08 | 2001-11-13 | Shipley Company, L.L.C. | Planarizing antireflective coating compositions |
EP1392508B1 (de) | 2001-04-17 | 2018-10-10 | Brewer Science, Inc. | Antireflexionsbeschichtungszusammensetzung mit verbesserter schleuderbehälterkompatibilität |
TW591341B (en) * | 2001-09-26 | 2004-06-11 | Shipley Co Llc | Coating compositions for use with an overcoated photoresist |
JP4381143B2 (ja) | 2001-11-15 | 2009-12-09 | ハネウェル・インターナショナル・インコーポレーテッド | フォトリソグラフィー用スピンオン反射防止膜 |
US6846612B2 (en) | 2002-02-01 | 2005-01-25 | Brewer Science Inc. | Organic anti-reflective coating compositions for advanced microlithography |
KR100478982B1 (ko) * | 2002-05-02 | 2005-03-25 | 금호석유화학 주식회사 | 신규 산발생제 및 이를 함유한 박막 조성물 |
KR100470938B1 (ko) * | 2002-05-17 | 2005-02-22 | (주)모레이 | 유기 난반사 방지막 형성용 광흡수성 고분자, 이를포함하는 조성물, 및 이를 이용한 반도체 소자 패턴의형성 방법 |
JP3850772B2 (ja) * | 2002-08-21 | 2006-11-29 | 富士通株式会社 | レジストパターン厚肉化材料、レジストパターンの製造方法、及び半導体装置の製造方法 |
US7323289B2 (en) * | 2002-10-08 | 2008-01-29 | Brewer Science Inc. | Bottom anti-reflective coatings derived from small core molecules with multiple epoxy moieties |
CN101560323B (zh) * | 2003-04-02 | 2012-07-04 | 日产化学工业株式会社 | 含有环氧化合物和羧酸化合物的光刻用形成下层膜的组合物 |
US7361447B2 (en) * | 2003-07-30 | 2008-04-22 | Hynix Semiconductor Inc. | Photoresist polymer and photoresist composition containing the same |
US7867331B2 (en) * | 2003-08-04 | 2011-01-11 | Honeywell International Inc. | Coating composition optimization for via fill and photolithography applications and methods of preparation thereof |
KR100570208B1 (ko) * | 2003-10-15 | 2006-04-12 | 주식회사 하이닉스반도체 | 유기 반사방지막용 광 흡수제 중합체 및 이의 제조 방법과상기 중합체를 포함하는 유기 반사 방지막 조성물 |
KR100570206B1 (ko) * | 2003-10-15 | 2006-04-12 | 주식회사 하이닉스반도체 | 유기 반사방지막용 광 흡수제 중합체 및 이의 제조 방법과상기 중합체를 포함하는 유기 반사 방지막 조성물 |
KR100570209B1 (ko) * | 2003-10-15 | 2006-04-12 | 주식회사 하이닉스반도체 | 유기 반사방지막용 광 흡수제 중합체 및 이의 제조 방법과상기 중합체를 포함하는 유기 반사 방지막 조성물 |
KR100570207B1 (ko) * | 2003-10-15 | 2006-04-12 | 주식회사 하이닉스반도체 | 유기 반사방지막용 광 흡수제 중합체 및 이의 제조 방법과상기 중합체를 포함하는 유기 반사 방지막 조성물 |
KR100611391B1 (ko) * | 2003-11-06 | 2006-08-11 | 주식회사 하이닉스반도체 | 유기 난반사 방지막 조성물 및 이를 이용한 패턴 형성 방법 |
US8053159B2 (en) * | 2003-11-18 | 2011-11-08 | Honeywell International Inc. | Antireflective coatings for via fill and photolithography applications and methods of preparation thereof |
US7534555B2 (en) * | 2003-12-10 | 2009-05-19 | Hitachi Global Storage Technologies Netherlands B.V. | Plating using copolymer |
JP4612672B2 (ja) * | 2004-03-12 | 2011-01-12 | フジフィルム・エレクトロニック・マテリアルズ・ユーエスエイ・インコーポレイテッド | リソグラフィ用途のための熱硬化性アンダーコート |
KR100574490B1 (ko) * | 2004-04-27 | 2006-04-27 | 주식회사 하이닉스반도체 | 상부 반사방지막 중합체, 이의 제조방법 및 이를 함유하는상부 반사방지막 조성물 |
US20050255410A1 (en) * | 2004-04-29 | 2005-11-17 | Guerrero Douglas J | Anti-reflective coatings using vinyl ether crosslinkers |
US7241697B2 (en) * | 2005-07-07 | 2007-07-10 | Hitachi Global Storage Technologies Netherlands Bv | Method for sensor edge control and track width definition for narrow track width devices |
EP1906249A3 (de) * | 2006-09-26 | 2008-12-24 | Rohm and Haas Electronic Materials, L.L.C. | Antireflexbeschichtungszusammensetzungen für Photolithographie |
US8642246B2 (en) | 2007-02-26 | 2014-02-04 | Honeywell International Inc. | Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof |
KR100886314B1 (ko) * | 2007-06-25 | 2009-03-04 | 금호석유화학 주식회사 | 유기반사방지막용 공중합체 및 이를 포함하는유기반사방지막 조성물 |
CN101842414B (zh) * | 2007-10-30 | 2014-06-04 | 布鲁尔科技公司 | 可光成像的支化聚合物 |
KR101585992B1 (ko) | 2007-12-20 | 2016-01-19 | 삼성전자주식회사 | 반사방지 코팅용 고분자, 반사방지 코팅용 조성물 및 이를 이용한 반도체 장치의 패턴 형성 방법 |
US8557877B2 (en) | 2009-06-10 | 2013-10-15 | Honeywell International Inc. | Anti-reflective coatings for optically transparent substrates |
US8883407B2 (en) * | 2009-06-12 | 2014-11-11 | Rohm And Haas Electronic Materials Llc | Coating compositions suitable for use with an overcoated photoresist |
US8864898B2 (en) | 2011-05-31 | 2014-10-21 | Honeywell International Inc. | Coating formulations for optical elements |
JP6146305B2 (ja) * | 2011-10-12 | 2017-06-14 | Jsr株式会社 | パターン形成方法 |
JP6449145B2 (ja) | 2012-04-23 | 2019-01-09 | ブルーワー サイエンス アイ エヌ シー. | 感光性、現像液可溶性の底面反射防止膜材料 |
WO2015033610A1 (ja) * | 2013-09-09 | 2015-03-12 | 日本化薬株式会社 | 光学部材の製造方法及びそれに用いる紫外線硬化型樹脂組成物 |
CN103645609B (zh) * | 2013-11-08 | 2015-09-30 | 上海华力微电子有限公司 | 一种改善光刻胶形貌的方法 |
JP6803842B2 (ja) | 2015-04-13 | 2020-12-23 | ハネウェル・インターナショナル・インコーポレーテッドHoneywell International Inc. | オプトエレクトロニクス用途のためのポリシロキサン製剤及びコーティング |
TWI662370B (zh) * | 2015-11-30 | 2019-06-11 | 南韓商羅門哈斯電子材料韓國公司 | 與外塗佈光致抗蝕劑一起使用之塗料組合物 |
KR102652985B1 (ko) * | 2016-11-07 | 2024-03-29 | 동우 화인켐 주식회사 | 감광성 수지 및 반사방지막의 도포성 향상 및 제거용 신너 조성물 |
CN109206966A (zh) * | 2018-09-08 | 2019-01-15 | 佛山市禅城区诺高环保科技有限公司 | 一种耐候性高透明消光粉的制备方法 |
KR20230042945A (ko) * | 2021-09-23 | 2023-03-30 | 삼성전기주식회사 | 인쇄회로기판 제조방법 및 이에 이용되는 레지스트 적층체 |
CN113913075B (zh) * | 2021-10-25 | 2022-09-20 | 嘉庚创新实验室 | 一种抗反射涂层组合物及可交联聚合物 |
CN115403976B (zh) * | 2022-08-19 | 2023-04-18 | 嘉庚创新实验室 | 一种抗反射涂层组合物 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6165697A (en) | 1991-11-15 | 2000-12-26 | Shipley Company, L.L.C. | Antihalation compositions |
US5886102A (en) | 1996-06-11 | 1999-03-23 | Shipley Company, L.L.C. | Antireflective coating compositions |
US5652317A (en) | 1996-08-16 | 1997-07-29 | Hoechst Celanese Corporation | Antireflective coatings for photoresist compositions |
US5733714A (en) * | 1996-09-30 | 1998-03-31 | Clariant Finance (Bvi) Limited | Antireflective coating for photoresist compositions |
US6165684A (en) * | 1996-12-24 | 2000-12-26 | Fuji Photo Film Co., Ltd. | Bottom anti-reflective coating material composition and method for forming resist pattern using the same |
US5919599A (en) * | 1997-09-30 | 1999-07-06 | Brewer Science, Inc. | Thermosetting anti-reflective coatings at deep ultraviolet |
US5935760A (en) | 1997-10-20 | 1999-08-10 | Brewer Science Inc. | Thermosetting polyester anti-reflective coatings for multilayer photoresist processes |
US6143480A (en) * | 1998-09-03 | 2000-11-07 | Fuji Photo Film Co., Ltd. | Leuco dye and image recording medium containing the same |
US6117967A (en) * | 1999-06-04 | 2000-09-12 | Xerox Corporation | Arylene ether alcohol polymers |
-
1998
- 1998-09-24 JP JP27004298A patent/JP3852889B2/ja not_active Expired - Fee Related
-
1999
- 1999-09-13 KR KR1019990038978A patent/KR100624044B1/ko active IP Right Grant
- 1999-09-16 US US09/397,117 patent/US6399269B2/en not_active Expired - Lifetime
- 1999-09-22 DE DE69906901T patent/DE69906901T2/de not_active Expired - Lifetime
- 1999-09-22 EP EP99118047A patent/EP0989463B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US20020015909A1 (en) | 2002-02-07 |
JP2000098595A (ja) | 2000-04-07 |
EP0989463B1 (de) | 2003-04-16 |
DE69906901T2 (de) | 2003-11-27 |
EP0989463A3 (de) | 2000-09-13 |
KR20000023107A (ko) | 2000-04-25 |
KR100624044B1 (ko) | 2006-09-19 |
JP3852889B2 (ja) | 2006-12-06 |
EP0989463A2 (de) | 2000-03-29 |
US6399269B2 (en) | 2002-06-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: FUJIFILM CORP., TOKIO/TOKYO, JP |