DE69906901D1 - Zusammensetzung für eine Antireflexunterschicht für einen Photoresist und Verfahren zur Erzeugung eines Resistmusters - Google Patents

Zusammensetzung für eine Antireflexunterschicht für einen Photoresist und Verfahren zur Erzeugung eines Resistmusters

Info

Publication number
DE69906901D1
DE69906901D1 DE69906901T DE69906901T DE69906901D1 DE 69906901 D1 DE69906901 D1 DE 69906901D1 DE 69906901 T DE69906901 T DE 69906901T DE 69906901 T DE69906901 T DE 69906901T DE 69906901 D1 DE69906901 D1 DE 69906901D1
Authority
DE
Germany
Prior art keywords
photoresist
forming
resist pattern
undercoat composition
antireflective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69906901T
Other languages
English (en)
Other versions
DE69906901T2 (de
Inventor
Kazuyoshi Mizutani
Makoto Momota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Application granted granted Critical
Publication of DE69906901D1 publication Critical patent/DE69906901D1/de
Publication of DE69906901T2 publication Critical patent/DE69906901T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Paints Or Removers (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
DE69906901T 1998-09-24 1999-09-22 Zusammensetzung für eine Antireflexunterschicht für einen Photoresist und Verfahren zur Erzeugung eines Resistmusters Expired - Lifetime DE69906901T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27004298A JP3852889B2 (ja) 1998-09-24 1998-09-24 フォトレジスト用反射防止膜材料組成物

Publications (2)

Publication Number Publication Date
DE69906901D1 true DE69906901D1 (de) 2003-05-22
DE69906901T2 DE69906901T2 (de) 2003-11-27

Family

ID=17480729

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69906901T Expired - Lifetime DE69906901T2 (de) 1998-09-24 1999-09-22 Zusammensetzung für eine Antireflexunterschicht für einen Photoresist und Verfahren zur Erzeugung eines Resistmusters

Country Status (5)

Country Link
US (1) US6399269B2 (de)
EP (1) EP0989463B1 (de)
JP (1) JP3852889B2 (de)
KR (1) KR100624044B1 (de)
DE (1) DE69906901T2 (de)

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KR100478982B1 (ko) * 2002-05-02 2005-03-25 금호석유화학 주식회사 신규 산발생제 및 이를 함유한 박막 조성물
KR100470938B1 (ko) * 2002-05-17 2005-02-22 (주)모레이 유기 난반사 방지막 형성용 광흡수성 고분자, 이를포함하는 조성물, 및 이를 이용한 반도체 소자 패턴의형성 방법
JP3850772B2 (ja) * 2002-08-21 2006-11-29 富士通株式会社 レジストパターン厚肉化材料、レジストパターンの製造方法、及び半導体装置の製造方法
US7323289B2 (en) * 2002-10-08 2008-01-29 Brewer Science Inc. Bottom anti-reflective coatings derived from small core molecules with multiple epoxy moieties
CN101560323B (zh) * 2003-04-02 2012-07-04 日产化学工业株式会社 含有环氧化合物和羧酸化合物的光刻用形成下层膜的组合物
US7361447B2 (en) * 2003-07-30 2008-04-22 Hynix Semiconductor Inc. Photoresist polymer and photoresist composition containing the same
US7867331B2 (en) * 2003-08-04 2011-01-11 Honeywell International Inc. Coating composition optimization for via fill and photolithography applications and methods of preparation thereof
KR100570208B1 (ko) * 2003-10-15 2006-04-12 주식회사 하이닉스반도체 유기 반사방지막용 광 흡수제 중합체 및 이의 제조 방법과상기 중합체를 포함하는 유기 반사 방지막 조성물
KR100570206B1 (ko) * 2003-10-15 2006-04-12 주식회사 하이닉스반도체 유기 반사방지막용 광 흡수제 중합체 및 이의 제조 방법과상기 중합체를 포함하는 유기 반사 방지막 조성물
KR100570209B1 (ko) * 2003-10-15 2006-04-12 주식회사 하이닉스반도체 유기 반사방지막용 광 흡수제 중합체 및 이의 제조 방법과상기 중합체를 포함하는 유기 반사 방지막 조성물
KR100570207B1 (ko) * 2003-10-15 2006-04-12 주식회사 하이닉스반도체 유기 반사방지막용 광 흡수제 중합체 및 이의 제조 방법과상기 중합체를 포함하는 유기 반사 방지막 조성물
KR100611391B1 (ko) * 2003-11-06 2006-08-11 주식회사 하이닉스반도체 유기 난반사 방지막 조성물 및 이를 이용한 패턴 형성 방법
US8053159B2 (en) * 2003-11-18 2011-11-08 Honeywell International Inc. Antireflective coatings for via fill and photolithography applications and methods of preparation thereof
US7534555B2 (en) * 2003-12-10 2009-05-19 Hitachi Global Storage Technologies Netherlands B.V. Plating using copolymer
JP4612672B2 (ja) * 2004-03-12 2011-01-12 フジフィルム・エレクトロニック・マテリアルズ・ユーエスエイ・インコーポレイテッド リソグラフィ用途のための熱硬化性アンダーコート
KR100574490B1 (ko) * 2004-04-27 2006-04-27 주식회사 하이닉스반도체 상부 반사방지막 중합체, 이의 제조방법 및 이를 함유하는상부 반사방지막 조성물
US20050255410A1 (en) * 2004-04-29 2005-11-17 Guerrero Douglas J Anti-reflective coatings using vinyl ether crosslinkers
US7241697B2 (en) * 2005-07-07 2007-07-10 Hitachi Global Storage Technologies Netherlands Bv Method for sensor edge control and track width definition for narrow track width devices
EP1906249A3 (de) * 2006-09-26 2008-12-24 Rohm and Haas Electronic Materials, L.L.C. Antireflexbeschichtungszusammensetzungen für Photolithographie
US8642246B2 (en) 2007-02-26 2014-02-04 Honeywell International Inc. Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof
KR100886314B1 (ko) * 2007-06-25 2009-03-04 금호석유화학 주식회사 유기반사방지막용 공중합체 및 이를 포함하는유기반사방지막 조성물
CN101842414B (zh) * 2007-10-30 2014-06-04 布鲁尔科技公司 可光成像的支化聚合物
KR101585992B1 (ko) 2007-12-20 2016-01-19 삼성전자주식회사 반사방지 코팅용 고분자, 반사방지 코팅용 조성물 및 이를 이용한 반도체 장치의 패턴 형성 방법
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
US8883407B2 (en) * 2009-06-12 2014-11-11 Rohm And Haas Electronic Materials Llc Coating compositions suitable for use with an overcoated photoresist
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
JP6146305B2 (ja) * 2011-10-12 2017-06-14 Jsr株式会社 パターン形成方法
JP6449145B2 (ja) 2012-04-23 2019-01-09 ブルーワー サイエンス アイ エヌ シー． 感光性、現像液可溶性の底面反射防止膜材料
WO2015033610A1 (ja) * 2013-09-09 2015-03-12 日本化薬株式会社 光学部材の製造方法及びそれに用いる紫外線硬化型樹脂組成物
CN103645609B (zh) * 2013-11-08 2015-09-30 上海华力微电子有限公司 一种改善光刻胶形貌的方法
JP6803842B2 (ja) 2015-04-13 2020-12-23 ハネウェル・インターナショナル・インコーポレーテッドＨｏｎｅｙｗｅｌｌ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｉｎｃ． オプトエレクトロニクス用途のためのポリシロキサン製剤及びコーティング
TWI662370B (zh) * 2015-11-30 2019-06-11 南韓商羅門哈斯電子材料韓國公司 與外塗佈光致抗蝕劑一起使用之塗料組合物
KR102652985B1 (ko) * 2016-11-07 2024-03-29 동우 화인켐 주식회사 감광성 수지 및 반사방지막의 도포성 향상 및 제거용 신너 조성물
CN109206966A (zh) * 2018-09-08 2019-01-15 佛山市禅城区诺高环保科技有限公司 一种耐候性高透明消光粉的制备方法
KR20230042945A (ko) * 2021-09-23 2023-03-30 삼성전기주식회사 인쇄회로기판 제조방법 및 이에 이용되는 레지스트 적층체
CN113913075B (zh) * 2021-10-25 2022-09-20 嘉庚创新实验室 一种抗反射涂层组合物及可交联聚合物
CN115403976B (zh) * 2022-08-19 2023-04-18 嘉庚创新实验室 一种抗反射涂层组合物

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US6165697A (en) 1991-11-15 2000-12-26 Shipley Company, L.L.C. Antihalation compositions
US5886102A (en) 1996-06-11 1999-03-23 Shipley Company, L.L.C. Antireflective coating compositions
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US6117967A (en) * 1999-06-04 2000-09-12 Xerox Corporation Arylene ether alcohol polymers

Also Published As

Publication number Publication date
US20020015909A1 (en) 2002-02-07
JP2000098595A (ja) 2000-04-07
EP0989463B1 (de) 2003-04-16
DE69906901T2 (de) 2003-11-27
EP0989463A3 (de) 2000-09-13
KR20000023107A (ko) 2000-04-25
KR100624044B1 (ko) 2006-09-19
JP3852889B2 (ja) 2006-12-06
EP0989463A2 (de) 2000-03-29
US6399269B2 (en) 2002-06-04

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Legal Events

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Owner name: FUJIFILM CORP., TOKIO/TOKYO, JP