DE69736155D1 - Nitrid-Einkristall und Verfahren zu seiner Herstellung - Google Patents

Nitrid-Einkristall und Verfahren zu seiner Herstellung

Info

Publication number
DE69736155D1
DE69736155D1 DE69736155T DE69736155T DE69736155D1 DE 69736155 D1 DE69736155 D1 DE 69736155D1 DE 69736155 T DE69736155 T DE 69736155T DE 69736155 T DE69736155 T DE 69736155T DE 69736155 D1 DE69736155 D1 DE 69736155D1
Authority
DE
Germany
Prior art keywords
preparation
single crystal
nitride single
nitride
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69736155T
Other languages
English (en)
Other versions
DE69736155T2 (de
Inventor
Motoyuki Tanaka
Kouichi Sogabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Application granted granted Critical
Publication of DE69736155D1 publication Critical patent/DE69736155D1/de
Publication of DE69736155T2 publication Critical patent/DE69736155T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69736155T 1996-06-04 1997-06-03 Nitrid-Einkristall und Verfahren zu seiner Herstellung Expired - Lifetime DE69736155T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP14123696 1996-06-04
JP14123696 1996-06-04
JP09407897A JP3876473B2 (ja) 1996-06-04 1997-04-11 窒化物単結晶及びその製造方法
JP9407897 1997-04-11

Publications (2)

Publication Number Publication Date
DE69736155D1 true DE69736155D1 (de) 2006-08-03
DE69736155T2 DE69736155T2 (de) 2007-04-19

Family

ID=26435396

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69736155T Expired - Lifetime DE69736155T2 (de) 1996-06-04 1997-06-03 Nitrid-Einkristall und Verfahren zu seiner Herstellung

Country Status (5)

Country Link
US (1) US6001748A (de)
EP (1) EP0811708B1 (de)
JP (1) JP3876473B2 (de)
CA (1) CA2206884C (de)
DE (1) DE69736155T2 (de)

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DE19828310C2 (de) * 1998-06-25 2000-08-31 Forschungszentrum Juelich Gmbh Einkristallpulver- und Monokornmembranherstellung
RU2158789C1 (ru) * 1999-08-04 2000-11-10 Водаков Юрий Александрович Способ эпитаксиального выращивания монокристаллического нитрида алюминия и ростовая камера для осуществления способа
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US7501023B2 (en) 2001-07-06 2009-03-10 Technologies And Devices, International, Inc. Method and apparatus for fabricating crack-free Group III nitride semiconductor materials
US20070032046A1 (en) * 2001-07-06 2007-02-08 Dmitriev Vladimir A Method for simultaneously producing multiple wafers during a single epitaxial growth run and semiconductor structure grown thereby
US6613143B1 (en) * 2001-07-06 2003-09-02 Technologies And Devices International, Inc. Method for fabricating bulk GaN single crystals
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US7211146B2 (en) * 2001-09-21 2007-05-01 Crystal Is, Inc. Powder metallurgy crucible for aluminum nitride crystal growth
US6723599B2 (en) 2001-12-03 2004-04-20 Micron Technology, Inc. Methods of forming capacitors and methods of forming capacitor dielectric layers
US6770135B2 (en) * 2001-12-24 2004-08-03 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
US20060005763A1 (en) 2001-12-24 2006-01-12 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
US7638346B2 (en) 2001-12-24 2009-12-29 Crystal Is, Inc. Nitride semiconductor heterostructures and related methods
US8545629B2 (en) 2001-12-24 2013-10-01 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
US7175704B2 (en) * 2002-06-27 2007-02-13 Diamond Innovations, Inc. Method for reducing defect concentrations in crystals
WO2004005216A1 (ja) * 2002-07-09 2004-01-15 Kenichiro Miyahara 薄膜形成用基板、薄膜基板、光導波路、発光素子、及び発光素子搭載用基板
WO2004013385A1 (ja) * 2002-07-31 2004-02-12 Osaka Industrial Promotion Organization Iii族元素窒化物単結晶の製造方法およびそれにより得られたiii族元素窒化物透明単結晶
DE10248964B4 (de) * 2002-10-14 2011-12-01 Crystal-N Gmbh Verfahren zur Sublimationszüchtung von Aluminiumnitrid-Einkristallen
US7361220B2 (en) * 2003-03-26 2008-04-22 Matsushita Electric Industrial Co., Ltd. Method of manufacturing group III nitride single crystal, device used for the method and group III nitride single crystal obtained by the method
JP4600641B2 (ja) 2004-01-27 2010-12-15 日立電線株式会社 窒化物半導体自立基板及びそれを用いた窒化物半導体発光素子
JP4790607B2 (ja) * 2004-04-27 2011-10-12 パナソニック株式会社 Ｉｉｉ族元素窒化物結晶製造装置およびｉｉｉ族元素窒化物結晶製造方法
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US6933218B1 (en) * 2004-06-10 2005-08-23 Mosel Vitelic, Inc. Low temperature nitridation of amorphous high-K metal-oxide in inter-gates insulator stack
JP4558584B2 (ja) 2004-07-08 2010-10-06 日本碍子株式会社 窒化アルミニウム単結晶の製造方法
JP5349373B2 (ja) * 2004-07-08 2013-11-20 日本碍子株式会社 窒化アルミニウム単結晶の製造方法
CN100447310C (zh) * 2004-07-15 2008-12-31 住友电气工业株式会社 氮化物单晶和其生产方法
JP4670002B2 (ja) * 2004-07-20 2011-04-13 学校法人早稲田大学 窒化物単結晶の製造方法
JP4736365B2 (ja) * 2004-07-21 2011-07-27 学校法人早稲田大学 窒化アルミニウム単結晶の製造方法
JP5310669B2 (ja) * 2005-04-13 2013-10-09 住友電気工業株式会社 ＡｌＮ単結晶の成長方法
JP5186733B2 (ja) * 2005-07-29 2013-04-24 住友電気工業株式会社 ＡｌＮ結晶の成長方法
EP1775356A3 (de) * 2005-10-14 2009-12-16 Ricoh Company, Ltd. Kristallziehungsvorrichtung und Verfahren zur Herstellung von Gruppe-III-Nitrid Kristallen
US8349077B2 (en) 2005-11-28 2013-01-08 Crystal Is, Inc. Large aluminum nitride crystals with reduced defects and methods of making them
WO2007065018A2 (en) 2005-12-02 2007-06-07 Crystal Is, Inc. Doped aluminum nitride crystals and methods of making them
JP4753851B2 (ja) * 2005-12-19 2011-08-24 日本碍子株式会社 窒化アルミニウム粉末、窒化アルミニウム質セラミックス焼結体、半導体製造装置用部材、窒化アルミニウム発光材料、及び窒化アルミニウム粉末の製造方法
KR101346501B1 (ko) 2006-03-29 2013-12-31 스미토모덴키고교가부시키가이샤 Ⅲ족 질화물 단결정의 성장 방법
CN101454487B (zh) 2006-03-30 2013-01-23 晶体公司 氮化铝块状晶体的可控掺杂方法
US9034103B2 (en) 2006-03-30 2015-05-19 Crystal Is, Inc. Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them
CN101466878B (zh) 2006-06-16 2012-06-13 住友电气工业株式会社 第ⅲ族氮化物单晶及其生长方法
WO2007148615A1 (ja) * 2006-06-20 2007-12-27 Sumitomo Electric Industries, Ltd. ＡｌxＧａ1-xＮ結晶の成長方法およびＡｌxＧａ1-xＮ結晶基板
US7371282B2 (en) * 2006-07-12 2008-05-13 Northrop Grumman Corporation Solid solution wide bandgap semiconductor materials
US9416464B1 (en) 2006-10-11 2016-08-16 Ostendo Technologies, Inc. Apparatus and methods for controlling gas flows in a HVPE reactor
WO2008067854A1 (en) * 2006-12-08 2008-06-12 Lumilog Method for manufacturing a single crystal of nitride by epitaxial growth on a substrate preventing growth on the edges of the substrate
US9771666B2 (en) 2007-01-17 2017-09-26 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
CN107059116B (zh) 2007-01-17 2019-12-31 晶体公司 引晶的氮化铝晶体生长中的缺陷减少
US8080833B2 (en) 2007-01-26 2011-12-20 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
JP5730484B2 (ja) 2007-01-26 2015-06-10 クリスタル アイエス インコーポレイテッド 厚みのある擬似格子整合型の窒化物エピタキシャル層
US8088220B2 (en) 2007-05-24 2012-01-03 Crystal Is, Inc. Deep-eutectic melt growth of nitride crystals
US8921980B2 (en) * 2007-11-22 2014-12-30 Meijo University Aluminum nitride single crystal forming polygonal columns and a process for producing a plate-shaped aluminum nitride single crystal using the same
JP2009137777A (ja) 2007-12-04 2009-06-25 Sumitomo Electric Ind Ltd ＡｌＮ結晶およびその成長方法
JP4992703B2 (ja) 2007-12-25 2012-08-08 住友電気工業株式会社 Ｉｉｉ族窒化物半導体結晶の成長方法
JP5303941B2 (ja) * 2008-01-31 2013-10-02 住友電気工業株式会社 ＡｌｘＧａ１−ｘＮ単結晶の成長方法
KR101432716B1 (ko) * 2008-02-25 2014-08-21 삼성디스플레이 주식회사 박막 트랜지스터, 박막 트랜지스터를 포함하는 표시 장치및 그 제조 방법
JP5461859B2 (ja) 2008-03-28 2014-04-02 Ｊｆｅミネラル株式会社 ＡｌＮバルク単結晶及び半導体デバイス並びにＡｌＮ単結晶バルクの製造方法
JP2010042980A (ja) * 2008-07-17 2010-02-25 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物結晶の製造方法およびｉｉｉ族窒化物結晶
WO2012003304A1 (en) 2010-06-30 2012-01-05 Crystal Is, Inc. Growth of large aluminum nitride single crystals with thermal-gradient control
US8962359B2 (en) 2011-07-19 2015-02-24 Crystal Is, Inc. Photon extraction from nitride ultraviolet light-emitting devices
US9915000B2 (en) 2012-05-16 2018-03-13 National University Of Singapore Method and an apparatus for depositing a layer onto a workpiece using plasma
WO2014151264A1 (en) 2013-03-15 2014-09-25 Crystal Is, Inc. Planar contacts to pseudomorphic electronic and optoelectronic devices
JP6356663B2 (ja) * 2013-04-25 2018-07-11 株式会社ブリヂストン タイヤ
JP2017122028A (ja) 2016-01-07 2017-07-13 Ｊｆｅミネラル株式会社 窒化アルミニウム単結晶
JP7141849B2 (ja) 2018-05-16 2022-09-26 株式会社サイオクス 窒化物結晶基板および窒化物結晶基板の製造方法
CN113122925B (zh) * 2021-04-21 2022-04-08 中国科学院苏州纳米技术与纳米仿生研究所 一种氮化硅单晶及其制备方法与应用
DE102021123991B4 (de) 2021-09-16 2024-05-29 Pva Tepla Ag PVT-Verfahren und Apparatur zum prozesssicheren Herstellen von Einkristallen
CN114381800A (zh) * 2022-02-14 2022-04-22 苏州燎塬半导体有限公司 单晶氧化镓的制备方法及用于制备单晶氧化镓的工艺设备
DE102022123747A1 (de) 2022-09-16 2024-03-21 Pva Tepla Ag PVT-Verfahren und Apparatur zum prozesssicheren Herstellen von Einkristallen
DE102022123757B4 (de) 2022-09-16 2024-05-29 Pva Tepla Ag Apparatur, Tragrahmen für eine Apparatur und PVT-Verfahren zum prozesssicheren Herstellen von Einkristallen
WO2024056139A1 (de) 2022-09-16 2024-03-21 Pva Tepla Ag Pvt-verfahren und apparatur zum prozesssicheren herstellen von einkristallen
CN115491747B (zh) * 2022-09-29 2023-12-01 天津理工大学 一种六方氮化硼单晶的方法

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Publication number Priority date Publication date Assignee Title
JPS6251240A (ja) * 1985-08-30 1987-03-05 Agency Of Ind Science & Technol 半導体装置用基板
US4919689A (en) * 1988-01-27 1990-04-24 The Dow Chemical Company Self-reinforced silicon nitride ceramic of high fracture toughness
JP2739139B2 (ja) * 1989-03-06 1998-04-08 昭和電工株式会社 六角板状立方晶窒化ほう素及びその合成方法
JPH0353277A (ja) * 1989-07-20 1991-03-07 Sharp Corp トナー回収装置
JPH0512320A (ja) * 1991-01-18 1993-01-22 Oki Electric Ind Co Ltd 端末の取引制御方法
JPH07277897A (ja) * 1994-04-04 1995-10-24 Katsutoshi Yoneya 窒化アルミニウム単結晶の合成方法

Also Published As

Publication number Publication date
JP3876473B2 (ja) 2007-01-31
EP0811708B1 (de) 2006-06-21
EP0811708A3 (de) 1998-11-11
DE69736155T2 (de) 2007-04-19
EP0811708A2 (de) 1997-12-10
CA2206884C (en) 2005-05-24
JPH1053495A (ja) 1998-02-24
CA2206884A1 (en) 1997-12-04
US6001748A (en) 1999-12-14

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