PL186905B1
(pl)
*
|
1997-06-05 |
2004-03-31 |
Cantrum Badan Wysokocisnieniow |
Sposób wytwarzania wysokooporowych kryształów objętościowych GaN
|
US6117574A
(en)
*
|
1997-10-20 |
2000-09-12 |
Agency Of Industrial Science And Technology |
Triboluminescent inorganic material and a method for preparation thereof
|
US6063713A
(en)
*
|
1997-11-10 |
2000-05-16 |
Micron Technology, Inc. |
Methods for forming silicon nitride layers on silicon-comprising substrates
|
WO1999034037A1
(fr)
*
|
1997-12-25 |
1999-07-08 |
Japan Energy Corporation |
Procede de preparation de monocristaux de composes semi-conducteurs, equipement pour ce procede et monocristaux de composes semi-conducteurs
|
DE19828310C2
(de)
*
|
1998-06-25 |
2000-08-31 |
Forschungszentrum Juelich Gmbh |
Einkristallpulver- und Monokornmembranherstellung
|
RU2158789C1
(ru)
*
|
1999-08-04 |
2000-11-10 |
Водаков Юрий Александрович |
Способ эпитаксиального выращивания монокристаллического нитрида алюминия и ростовая камера для осуществления способа
|
TW436926B
(en)
*
|
1999-12-01 |
2001-05-28 |
Guo Shang Jr |
Method for oxidizing a nitride thin film on a conducting substrate
|
US6686298B1
(en)
|
2000-06-22 |
2004-02-03 |
Micron Technology, Inc. |
Methods of forming structures over semiconductor substrates, and methods of forming transistors associated with semiconductor substrates
|
US6833329B1
(en)
|
2000-06-22 |
2004-12-21 |
Micron Technology, Inc. |
Methods of forming oxide regions over semiconductor substrates
|
US6660657B1
(en)
|
2000-08-07 |
2003-12-09 |
Micron Technology, Inc. |
Methods of incorporating nitrogen into silicon-oxide-containing layers
|
US6562684B1
(en)
|
2000-08-30 |
2003-05-13 |
Micron Technology, Inc. |
Methods of forming dielectric materials
|
WO2002080225A2
(en)
*
|
2001-03-30 |
2002-10-10 |
Technologies And Devices International Inc. |
Method and apparatus for growing submicron group iii nitride structures utilizing hvpe techniques
|
US20060011135A1
(en)
*
|
2001-07-06 |
2006-01-19 |
Dmitriev Vladimir A |
HVPE apparatus for simultaneously producing multiple wafers during a single epitaxial growth run
|
US6936357B2
(en)
*
|
2001-07-06 |
2005-08-30 |
Technologies And Devices International, Inc. |
Bulk GaN and ALGaN single crystals
|
US7501023B2
(en)
|
2001-07-06 |
2009-03-10 |
Technologies And Devices, International, Inc. |
Method and apparatus for fabricating crack-free Group III nitride semiconductor materials
|
US20070032046A1
(en)
*
|
2001-07-06 |
2007-02-08 |
Dmitriev Vladimir A |
Method for simultaneously producing multiple wafers during a single epitaxial growth run and semiconductor structure grown thereby
|
US6613143B1
(en)
*
|
2001-07-06 |
2003-09-02 |
Technologies And Devices International, Inc. |
Method for fabricating bulk GaN single crystals
|
US6878585B2
(en)
|
2001-08-29 |
2005-04-12 |
Micron Technology, Inc. |
Methods of forming capacitors
|
US7211146B2
(en)
*
|
2001-09-21 |
2007-05-01 |
Crystal Is, Inc. |
Powder metallurgy crucible for aluminum nitride crystal growth
|
US6723599B2
(en)
|
2001-12-03 |
2004-04-20 |
Micron Technology, Inc. |
Methods of forming capacitors and methods of forming capacitor dielectric layers
|
US6770135B2
(en)
*
|
2001-12-24 |
2004-08-03 |
Crystal Is, Inc. |
Method and apparatus for producing large, single-crystals of aluminum nitride
|
US20060005763A1
(en)
|
2001-12-24 |
2006-01-12 |
Crystal Is, Inc. |
Method and apparatus for producing large, single-crystals of aluminum nitride
|
US7638346B2
(en)
|
2001-12-24 |
2009-12-29 |
Crystal Is, Inc. |
Nitride semiconductor heterostructures and related methods
|
US8545629B2
(en)
|
2001-12-24 |
2013-10-01 |
Crystal Is, Inc. |
Method and apparatus for producing large, single-crystals of aluminum nitride
|
US7175704B2
(en)
*
|
2002-06-27 |
2007-02-13 |
Diamond Innovations, Inc. |
Method for reducing defect concentrations in crystals
|
WO2004005216A1
(ja)
*
|
2002-07-09 |
2004-01-15 |
Kenichiro Miyahara |
薄膜形成用基板、薄膜基板、光導波路、発光素子、及び発光素子搭載用基板
|
WO2004013385A1
(ja)
*
|
2002-07-31 |
2004-02-12 |
Osaka Industrial Promotion Organization |
Iii族元素窒化物単結晶の製造方法およびそれにより得られたiii族元素窒化物透明単結晶
|
DE10248964B4
(de)
*
|
2002-10-14 |
2011-12-01 |
Crystal-N Gmbh |
Verfahren zur Sublimationszüchtung von Aluminiumnitrid-Einkristallen
|
US7361220B2
(en)
*
|
2003-03-26 |
2008-04-22 |
Matsushita Electric Industrial Co., Ltd. |
Method of manufacturing group III nitride single crystal, device used for the method and group III nitride single crystal obtained by the method
|
JP4600641B2
(ja)
|
2004-01-27 |
2010-12-15 |
日立電線株式会社 |
窒化物半導体自立基板及びそれを用いた窒化物半導体発光素子
|
JP4790607B2
(ja)
*
|
2004-04-27 |
2011-10-12 |
パナソニック株式会社 |
Iii族元素窒化物結晶製造装置およびiii族元素窒化物結晶製造方法
|
US7294199B2
(en)
*
|
2004-06-10 |
2007-11-13 |
Sumitomo Electric Industries, Ltd. |
Nitride single crystal and producing method thereof
|
US6933218B1
(en)
*
|
2004-06-10 |
2005-08-23 |
Mosel Vitelic, Inc. |
Low temperature nitridation of amorphous high-K metal-oxide in inter-gates insulator stack
|
JP4558584B2
(ja)
|
2004-07-08 |
2010-10-06 |
日本碍子株式会社 |
窒化アルミニウム単結晶の製造方法
|
JP5349373B2
(ja)
*
|
2004-07-08 |
2013-11-20 |
日本碍子株式会社 |
窒化アルミニウム単結晶の製造方法
|
CN100447310C
(zh)
*
|
2004-07-15 |
2008-12-31 |
住友电气工业株式会社 |
氮化物单晶和其生产方法
|
JP4670002B2
(ja)
*
|
2004-07-20 |
2011-04-13 |
学校法人早稲田大学 |
窒化物単結晶の製造方法
|
JP4736365B2
(ja)
*
|
2004-07-21 |
2011-07-27 |
学校法人早稲田大学 |
窒化アルミニウム単結晶の製造方法
|
JP5310669B2
(ja)
*
|
2005-04-13 |
2013-10-09 |
住友電気工業株式会社 |
AlN単結晶の成長方法
|
JP5186733B2
(ja)
*
|
2005-07-29 |
2013-04-24 |
住友電気工業株式会社 |
AlN結晶の成長方法
|
EP1775356A3
(de)
*
|
2005-10-14 |
2009-12-16 |
Ricoh Company, Ltd. |
Kristallziehungsvorrichtung und Verfahren zur Herstellung von Gruppe-III-Nitrid Kristallen
|
US8349077B2
(en)
|
2005-11-28 |
2013-01-08 |
Crystal Is, Inc. |
Large aluminum nitride crystals with reduced defects and methods of making them
|
WO2007065018A2
(en)
|
2005-12-02 |
2007-06-07 |
Crystal Is, Inc. |
Doped aluminum nitride crystals and methods of making them
|
JP4753851B2
(ja)
*
|
2005-12-19 |
2011-08-24 |
日本碍子株式会社 |
窒化アルミニウム粉末、窒化アルミニウム質セラミックス焼結体、半導体製造装置用部材、窒化アルミニウム発光材料、及び窒化アルミニウム粉末の製造方法
|
KR101346501B1
(ko)
|
2006-03-29 |
2013-12-31 |
스미토모덴키고교가부시키가이샤 |
Ⅲ족 질화물 단결정의 성장 방법
|
CN101454487B
(zh)
|
2006-03-30 |
2013-01-23 |
晶体公司 |
氮化铝块状晶体的可控掺杂方法
|
US9034103B2
(en)
|
2006-03-30 |
2015-05-19 |
Crystal Is, Inc. |
Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them
|
CN101466878B
(zh)
|
2006-06-16 |
2012-06-13 |
住友电气工业株式会社 |
第ⅲ族氮化物单晶及其生长方法
|
WO2007148615A1
(ja)
*
|
2006-06-20 |
2007-12-27 |
Sumitomo Electric Industries, Ltd. |
AlxGa1-xN結晶の成長方法およびAlxGa1-xN結晶基板
|
US7371282B2
(en)
*
|
2006-07-12 |
2008-05-13 |
Northrop Grumman Corporation |
Solid solution wide bandgap semiconductor materials
|
US9416464B1
(en)
|
2006-10-11 |
2016-08-16 |
Ostendo Technologies, Inc. |
Apparatus and methods for controlling gas flows in a HVPE reactor
|
WO2008067854A1
(en)
*
|
2006-12-08 |
2008-06-12 |
Lumilog |
Method for manufacturing a single crystal of nitride by epitaxial growth on a substrate preventing growth on the edges of the substrate
|
US9771666B2
(en)
|
2007-01-17 |
2017-09-26 |
Crystal Is, Inc. |
Defect reduction in seeded aluminum nitride crystal growth
|
CN107059116B
(zh)
|
2007-01-17 |
2019-12-31 |
晶体公司 |
引晶的氮化铝晶体生长中的缺陷减少
|
US8080833B2
(en)
|
2007-01-26 |
2011-12-20 |
Crystal Is, Inc. |
Thick pseudomorphic nitride epitaxial layers
|
JP5730484B2
(ja)
|
2007-01-26 |
2015-06-10 |
クリスタル アイエス インコーポレイテッド |
厚みのある擬似格子整合型の窒化物エピタキシャル層
|
US8088220B2
(en)
|
2007-05-24 |
2012-01-03 |
Crystal Is, Inc. |
Deep-eutectic melt growth of nitride crystals
|
US8921980B2
(en)
*
|
2007-11-22 |
2014-12-30 |
Meijo University |
Aluminum nitride single crystal forming polygonal columns and a process for producing a plate-shaped aluminum nitride single crystal using the same
|
JP2009137777A
(ja)
|
2007-12-04 |
2009-06-25 |
Sumitomo Electric Ind Ltd |
AlN結晶およびその成長方法
|
JP4992703B2
(ja)
|
2007-12-25 |
2012-08-08 |
住友電気工業株式会社 |
Iii族窒化物半導体結晶の成長方法
|
JP5303941B2
(ja)
*
|
2008-01-31 |
2013-10-02 |
住友電気工業株式会社 |
AlxGa1−xN単結晶の成長方法
|
KR101432716B1
(ko)
*
|
2008-02-25 |
2014-08-21 |
삼성디스플레이 주식회사 |
박막 트랜지스터, 박막 트랜지스터를 포함하는 표시 장치및 그 제조 방법
|
JP5461859B2
(ja)
|
2008-03-28 |
2014-04-02 |
Jfeミネラル株式会社 |
AlNバルク単結晶及び半導体デバイス並びにAlN単結晶バルクの製造方法
|
JP2010042980A
(ja)
*
|
2008-07-17 |
2010-02-25 |
Sumitomo Electric Ind Ltd |
Iii族窒化物結晶の製造方法およびiii族窒化物結晶
|
WO2012003304A1
(en)
|
2010-06-30 |
2012-01-05 |
Crystal Is, Inc. |
Growth of large aluminum nitride single crystals with thermal-gradient control
|
US8962359B2
(en)
|
2011-07-19 |
2015-02-24 |
Crystal Is, Inc. |
Photon extraction from nitride ultraviolet light-emitting devices
|
US9915000B2
(en)
|
2012-05-16 |
2018-03-13 |
National University Of Singapore |
Method and an apparatus for depositing a layer onto a workpiece using plasma
|
WO2014151264A1
(en)
|
2013-03-15 |
2014-09-25 |
Crystal Is, Inc. |
Planar contacts to pseudomorphic electronic and optoelectronic devices
|
JP6356663B2
(ja)
*
|
2013-04-25 |
2018-07-11 |
株式会社ブリヂストン |
タイヤ
|
JP2017122028A
(ja)
|
2016-01-07 |
2017-07-13 |
Jfeミネラル株式会社 |
窒化アルミニウム単結晶
|
JP7141849B2
(ja)
|
2018-05-16 |
2022-09-26 |
株式会社サイオクス |
窒化物結晶基板および窒化物結晶基板の製造方法
|
CN113122925B
(zh)
*
|
2021-04-21 |
2022-04-08 |
中国科学院苏州纳米技术与纳米仿生研究所 |
一种氮化硅单晶及其制备方法与应用
|
DE102021123991B4
(de)
|
2021-09-16 |
2024-05-29 |
Pva Tepla Ag |
PVT-Verfahren und Apparatur zum prozesssicheren Herstellen von Einkristallen
|
CN114381800A
(zh)
*
|
2022-02-14 |
2022-04-22 |
苏州燎塬半导体有限公司 |
单晶氧化镓的制备方法及用于制备单晶氧化镓的工艺设备
|
DE102022123747A1
(de)
|
2022-09-16 |
2024-03-21 |
Pva Tepla Ag |
PVT-Verfahren und Apparatur zum prozesssicheren Herstellen von Einkristallen
|
DE102022123757B4
(de)
|
2022-09-16 |
2024-05-29 |
Pva Tepla Ag |
Apparatur, Tragrahmen für eine Apparatur und PVT-Verfahren zum prozesssicheren Herstellen von Einkristallen
|
WO2024056139A1
(de)
|
2022-09-16 |
2024-03-21 |
Pva Tepla Ag |
Pvt-verfahren und apparatur zum prozesssicheren herstellen von einkristallen
|
CN115491747B
(zh)
*
|
2022-09-29 |
2023-12-01 |
天津理工大学 |
一种六方氮化硼单晶的方法
|