DE69618044D1 - Speicherzelle - Google Patents

Speicherzelle

Info

Publication number
DE69618044D1
DE69618044D1 DE69618044T DE69618044T DE69618044D1 DE 69618044 D1 DE69618044 D1 DE 69618044D1 DE 69618044 T DE69618044 T DE 69618044T DE 69618044 T DE69618044 T DE 69618044T DE 69618044 D1 DE69618044 D1 DE 69618044D1
Authority
DE
Germany
Prior art keywords
conducting layers
memory cell
conducting
layers
application means
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69618044T
Other languages
English (en)
Other versions
DE69618044T2 (de
Inventor
Yasunao Katayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE69618044D1 publication Critical patent/DE69618044D1/de
Publication of DE69618044T2 publication Critical patent/DE69618044T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/36—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic)
    • G11C11/38—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic) using tunnel diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
DE69618044T 1995-02-22 1996-02-01 Speicherzelle Expired - Fee Related DE69618044T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7033998A JP2986057B2 (ja) 1995-02-22 1995-02-22 メモリセル

Publications (2)

Publication Number Publication Date
DE69618044D1 true DE69618044D1 (de) 2002-01-31
DE69618044T2 DE69618044T2 (de) 2002-08-29

Family

ID=12402137

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69618044T Expired - Fee Related DE69618044T2 (de) 1995-02-22 1996-02-01 Speicherzelle

Country Status (8)

Country Link
US (1) US5625589A (de)
EP (1) EP0729156B1 (de)
JP (1) JP2986057B2 (de)
KR (1) KR0184629B1 (de)
AT (1) ATE211295T1 (de)
DE (1) DE69618044T2 (de)
ES (1) ES2167515T3 (de)
TW (1) TW270995B (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0797182A1 (de) * 1996-03-19 1997-09-24 Hitachi, Ltd. Flüssigkristallanzeige mit aktiver Matrix und mit Datenhalteschaltung in jedem Pixel
US7534710B2 (en) * 2005-12-22 2009-05-19 International Business Machines Corporation Coupled quantum well devices (CQWD) containing two or more direct selective contacts and methods of making same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0225698B1 (de) * 1985-10-12 1990-08-01 Fujitsu Limited Logische Schaltung
JP2588590B2 (ja) * 1988-07-20 1997-03-05 富士通株式会社 半導体記憶装置
US5251170A (en) * 1991-11-04 1993-10-05 Nonvolatile Electronics, Incorporated Offset magnetoresistive memory structures
JPH05190922A (ja) * 1992-01-09 1993-07-30 Hitachi Ltd 量子メモリ装置
US5420819A (en) * 1992-09-24 1995-05-30 Nonvolatile Electronics, Incorporated Method for sensing data in a magnetoresistive memory using large fractions of memory cell films for data storage
US5390145A (en) * 1993-04-15 1995-02-14 Fujitsu Limited Resonance tunnel diode memory

Also Published As

Publication number Publication date
EP0729156A2 (de) 1996-08-28
KR960032764A (ko) 1996-09-17
EP0729156A3 (de) 1999-07-28
ATE211295T1 (de) 2002-01-15
US5625589A (en) 1997-04-29
EP0729156B1 (de) 2001-12-19
DE69618044T2 (de) 2002-08-29
ES2167515T3 (es) 2002-05-16
JP2986057B2 (ja) 1999-12-06
JPH08250672A (ja) 1996-09-27
TW270995B (en) 1996-02-21
KR0184629B1 (ko) 1999-03-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee