DE69509581D1 - Electrically programmable memory cell - Google Patents
Electrically programmable memory cellInfo
- Publication number
- DE69509581D1 DE69509581D1 DE69509581T DE69509581T DE69509581D1 DE 69509581 D1 DE69509581 D1 DE 69509581D1 DE 69509581 T DE69509581 T DE 69509581T DE 69509581 T DE69509581 T DE 69509581T DE 69509581 D1 DE69509581 D1 DE 69509581D1
- Authority
- DE
- Germany
- Prior art keywords
- memory cell
- programmable memory
- electrically programmable
- electrically
- cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
- G11C11/5635—Erasing circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28123—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects
- H01L21/2815—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects part or whole of the electrode is a sidewall spacer or made by a similar technique, e.g. transformation under mask, plating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/561—Multilevel memory cell aspects
- G11C2211/5612—Multilevel memory cell with more than one floating gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9404146A FR2718289B1 (en) | 1994-03-30 | 1994-03-30 | Electrically programmable memory cell. |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69509581D1 true DE69509581D1 (en) | 1999-06-17 |
DE69509581T2 DE69509581T2 (en) | 1999-12-23 |
Family
ID=9461877
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69509581T Expired - Fee Related DE69509581T2 (en) | 1994-03-30 | 1995-03-24 | Electrically programmable memory cell |
Country Status (5)
Country | Link |
---|---|
US (2) | US5687113A (en) |
EP (1) | EP0675547B1 (en) |
JP (1) | JPH07302849A (en) |
DE (1) | DE69509581T2 (en) |
FR (1) | FR2718289B1 (en) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0926260A3 (en) | 1997-12-12 | 2001-04-11 | Matsushita Electric Industrial Co., Ltd. | Using antibody - antigen interaction for formation of a patterened metal film |
FR2776830B1 (en) | 1998-03-26 | 2001-11-23 | Sgs Thomson Microelectronics | ELECTRICALLY PROGRAMMABLE MEMORY CELL |
US6074914A (en) | 1998-10-30 | 2000-06-13 | Halo Lsi Design & Device Technology, Inc. | Integration method for sidewall split gate flash transistor |
US6795348B2 (en) * | 2002-05-29 | 2004-09-21 | Micron Technology, Inc. | Method and apparatus for erasing flash memory |
JP4683817B2 (en) * | 2002-09-27 | 2011-05-18 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
JP4454921B2 (en) * | 2002-09-27 | 2010-04-21 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
US6831325B2 (en) * | 2002-12-20 | 2004-12-14 | Atmel Corporation | Multi-level memory cell with lateral floating spacers |
KR100650369B1 (en) * | 2004-10-01 | 2006-11-27 | 주식회사 하이닉스반도체 | Non-volatile random access memory with sidewall?floating?polysilicon and method for fabricating the same |
US8099783B2 (en) * | 2005-05-06 | 2012-01-17 | Atmel Corporation | Security method for data protection |
US7453127B2 (en) * | 2006-02-13 | 2008-11-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Double-diffused-drain MOS device with floating non-insulator spacers |
US8969928B2 (en) * | 2010-08-31 | 2015-03-03 | Micron Technology, Inc. | Transistors having a control gate and one or more conductive structures |
TWI710113B (en) * | 2019-11-29 | 2020-11-11 | 億而得微電子股份有限公司 | Operation method of electronic writing erasable rewritable read-only memory |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4203158A (en) * | 1978-02-24 | 1980-05-13 | Intel Corporation | Electrically programmable and erasable MOS floating gate memory device employing tunneling and method of fabricating same |
DE3345173A1 (en) * | 1983-12-14 | 1985-07-25 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Method for sorting out unreliable integrated memories |
US4590665A (en) * | 1984-12-10 | 1986-05-27 | Solid State Scientific, Inc. | Method for double doping sources and drains in an EPROM |
US4754320A (en) * | 1985-02-25 | 1988-06-28 | Kabushiki Kaisha Toshiba | EEPROM with sidewall control gate |
JPH06105786B2 (en) * | 1985-08-20 | 1994-12-21 | セイコーエプソン株式会社 | Non-volatile memory |
US4939558A (en) * | 1985-09-27 | 1990-07-03 | Texas Instruments Incorporated | EEPROM memory cell and driving circuitry |
US4804637A (en) * | 1985-09-27 | 1989-02-14 | Texas Instruments Incorporated | EEPROM memory cell and driving circuitry |
JPS63215079A (en) * | 1987-03-04 | 1988-09-07 | Oki Electric Ind Co Ltd | Eprom semiconductor device and manufacture thereof |
JPS63248175A (en) * | 1987-04-03 | 1988-10-14 | Mitsubishi Electric Corp | Semiconductor memory device |
JPH01262669A (en) * | 1988-04-13 | 1989-10-19 | Sony Corp | Nonvolatile semiconductor memory storage |
JPH0231466A (en) * | 1988-07-21 | 1990-02-01 | Sony Corp | Manufacture of non-volatile memory device |
JPH02260564A (en) * | 1989-03-31 | 1990-10-23 | Mitsubishi Electric Corp | Semiconductor device and manufacture thereof |
JPH0350772A (en) * | 1989-07-18 | 1991-03-05 | Sony Corp | Manufacture of nonvolatile memory device |
JPH03177075A (en) * | 1989-12-06 | 1991-08-01 | Kawasaki Steel Corp | Non-volatile semiconductor memory device |
KR100243493B1 (en) * | 1990-08-29 | 2000-02-01 | 윌리엄 비. 켐플러 | Asymmetrical non-volatile memory cell, arrays and manufacturing method thereof |
US5202576A (en) * | 1990-08-29 | 1993-04-13 | Texas Instruments Incorporated | Asymmetrical non-volatile memory cell, arrays and methods for fabricating same |
US5267194A (en) * | 1991-08-30 | 1993-11-30 | Winbond Electronics Corporation | Electrically erasable programmable read-only-memory cell with side-wall floating gate |
US5379253A (en) * | 1992-06-01 | 1995-01-03 | National Semiconductor Corporation | High density EEPROM cell array with novel programming scheme and method of manufacture |
JP2871355B2 (en) * | 1992-11-13 | 1999-03-17 | 日本電気株式会社 | Data erasing method for nonvolatile semiconductor memory device |
JPH06243179A (en) * | 1993-02-12 | 1994-09-02 | Daikin Ind Ltd | Method and device for picture retrieval |
-
1994
- 1994-03-30 FR FR9404146A patent/FR2718289B1/en not_active Expired - Fee Related
-
1995
- 1995-03-24 DE DE69509581T patent/DE69509581T2/en not_active Expired - Fee Related
- 1995-03-24 EP EP95410022A patent/EP0675547B1/en not_active Expired - Lifetime
- 1995-03-28 US US08/413,206 patent/US5687113A/en not_active Expired - Lifetime
- 1995-03-30 JP JP7095943A patent/JPH07302849A/en active Pending
-
1997
- 1997-03-06 US US08/812,016 patent/US5740103A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69509581T2 (en) | 1999-12-23 |
FR2718289B1 (en) | 1996-08-02 |
US5740103A (en) | 1998-04-14 |
EP0675547A1 (en) | 1995-10-04 |
EP0675547B1 (en) | 1999-05-12 |
FR2718289A1 (en) | 1995-10-06 |
US5687113A (en) | 1997-11-11 |
JPH07302849A (en) | 1995-11-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |