DE69232543D1 - Statischer RAM-Speicher mit abgeglichenem Widerstand in einer integrierten Schaltung - Google Patents
Statischer RAM-Speicher mit abgeglichenem Widerstand in einer integrierten SchaltungInfo
- Publication number
- DE69232543D1 DE69232543D1 DE69232543T DE69232543T DE69232543D1 DE 69232543 D1 DE69232543 D1 DE 69232543D1 DE 69232543 T DE69232543 T DE 69232543T DE 69232543 T DE69232543 T DE 69232543T DE 69232543 D1 DE69232543 D1 DE 69232543D1
- Authority
- DE
- Germany
- Prior art keywords
- integrated circuit
- static ram
- matched resistance
- matched
- resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000003068 static effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
- H10B10/125—Static random access memory [SRAM] devices comprising a MOSFET load element the MOSFET being a thin film transistor [TFT]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/903—FET configuration adapted for use as static memory cell
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/903—FET configuration adapted for use as static memory cell
- Y10S257/904—FET configuration adapted for use as static memory cell with passive components,, e.g. polysilicon resistors
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US81495191A | 1991-12-30 | 1991-12-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE69232543D1 true DE69232543D1 (de) | 2002-05-16 |
Family
ID=25216442
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69232543T Expired - Lifetime DE69232543D1 (de) | 1991-12-30 | 1992-12-10 | Statischer RAM-Speicher mit abgeglichenem Widerstand in einer integrierten Schaltung |
Country Status (4)
Country | Link |
---|---|
US (1) | US5353245A (de) |
EP (1) | EP0550177B1 (de) |
JP (1) | JP2511628B2 (de) |
DE (1) | DE69232543D1 (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07235645A (ja) * | 1993-12-29 | 1995-09-05 | Mitsubishi Electric Corp | スタティック型半導体記憶装置およびその製造方法 |
US5699292A (en) * | 1996-01-04 | 1997-12-16 | Micron Technology, Inc. | SRAM cell employing substantially vertically elongated pull-up resistors |
US5808941A (en) * | 1996-01-04 | 1998-09-15 | Micron Technology, Inc. | SRAM cell employing substantially vertically elongated pull-up resistors |
US5751630A (en) * | 1996-08-29 | 1998-05-12 | Micron Technology, Inc. | SRAM cell employing substantially vertically elongated pull-up resistors |
KR100660277B1 (ko) | 2005-12-29 | 2006-12-20 | 동부일렉트로닉스 주식회사 | 에스램 소자 및 그 제조 방법 |
KR100707612B1 (ko) * | 2005-12-29 | 2007-04-13 | 동부일렉트로닉스 주식회사 | 에스램 소자 및 그 제조 방법 |
US8139400B2 (en) | 2008-01-22 | 2012-03-20 | International Business Machines Corporation | Enhanced static random access memory stability using asymmetric access transistors and design structure for same |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55132055A (en) * | 1979-03-30 | 1980-10-14 | Nec Corp | Mos integrated circuit |
JPS57172591A (en) * | 1981-04-17 | 1982-10-23 | Toshiba Corp | Read-only semiconductor storage device |
JPS5916370A (ja) * | 1982-07-19 | 1984-01-27 | Toshiba Corp | 半導体記憶装置 |
JPS59121853A (ja) * | 1982-12-27 | 1984-07-14 | Toshiba Corp | 半導体装置 |
US4744056A (en) * | 1986-02-28 | 1988-05-10 | Advanced Micro Devices, Inc. | Stable high density RAM |
JP2523488B2 (ja) * | 1986-04-18 | 1996-08-07 | 株式会社日立製作所 | 半導体記憶装置 |
US4794561A (en) * | 1987-07-02 | 1988-12-27 | Integrated Device Technology, Inc. | Static ram cell with trench pull-down transistors and buried-layer ground plate |
JP2927463B2 (ja) * | 1989-09-28 | 1999-07-28 | 株式会社日立製作所 | 半導体記憶装置 |
EP0443811B1 (de) * | 1990-02-19 | 1994-08-03 | Nec Corporation | Halbleiterspeichervorrichtung |
-
1992
- 1992-12-10 DE DE69232543T patent/DE69232543D1/de not_active Expired - Lifetime
- 1992-12-10 EP EP92311258A patent/EP0550177B1/de not_active Expired - Lifetime
-
1993
- 1993-01-04 JP JP5014403A patent/JP2511628B2/ja not_active Expired - Lifetime
- 1993-08-24 US US08/111,033 patent/US5353245A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0550177A1 (de) | 1993-07-07 |
JPH0685207A (ja) | 1994-03-25 |
US5353245A (en) | 1994-10-04 |
JP2511628B2 (ja) | 1996-07-03 |
EP0550177B1 (de) | 2002-04-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8332 | No legal effect for de |