DE602005006791D1 - Halbleiterspeicher und sein Seitenpufferspeicher mit verbessertem Layout - Google Patents
Halbleiterspeicher und sein Seitenpufferspeicher mit verbessertem LayoutInfo
- Publication number
- DE602005006791D1 DE602005006791D1 DE602005006791T DE602005006791T DE602005006791D1 DE 602005006791 D1 DE602005006791 D1 DE 602005006791D1 DE 602005006791 T DE602005006791 T DE 602005006791T DE 602005006791 T DE602005006791 T DE 602005006791T DE 602005006791 D1 DE602005006791 D1 DE 602005006791D1
- Authority
- DE
- Germany
- Prior art keywords
- page buffer
- memory
- improved layout
- semiconductor memory
- buffer memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5642—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
- G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/564—Miscellaneous aspects
- G11C2211/5642—Multilevel memory with buffers, latches, registers at input or output
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP05106973A EP1748443B1 (de) | 2005-07-28 | 2005-07-28 | Halbleiterspeicher und sein Seitenpufferspeicher mit verbessertem Layout |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE602005006791D1 true DE602005006791D1 (de) | 2008-06-26 |
Family
ID=35520515
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE602005006791T Active DE602005006791D1 (de) | 2005-07-28 | 2005-07-28 | Halbleiterspeicher und sein Seitenpufferspeicher mit verbessertem Layout |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7408819B2 (de) |
| EP (1) | EP1748443B1 (de) |
| DE (1) | DE602005006791D1 (de) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1748443B1 (de) * | 2005-07-28 | 2008-05-14 | STMicroelectronics S.r.l. | Halbleiterspeicher und sein Seitenpufferspeicher mit verbessertem Layout |
| TWI594246B (zh) * | 2016-05-24 | 2017-08-01 | 旺宏電子股份有限公司 | 記憶體元件及其製作方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5683891A (en) * | 1979-12-13 | 1981-07-08 | Fujitsu Ltd | Semiconductor storage device |
| KR0140179B1 (ko) * | 1994-12-19 | 1998-07-15 | 김광호 | 불휘발성 반도체 메모리 |
| JP4250325B2 (ja) * | 2000-11-01 | 2009-04-08 | 株式会社東芝 | 半導体記憶装置 |
| US6377507B1 (en) * | 2001-04-06 | 2002-04-23 | Integrated Memory Technologies, Inc. | Non-volatile memory device having high speed page mode operation |
| KR100387529B1 (ko) * | 2001-06-11 | 2003-06-18 | 삼성전자주식회사 | 랜덤 억세스 가능한 메모리 셀 어레이를 갖는 불휘발성반도체 메모리 장치 |
| US7042770B2 (en) * | 2001-07-23 | 2006-05-09 | Samsung Electronics Co., Ltd. | Memory devices with page buffer having dual registers and method of using the same |
| KR100512178B1 (ko) * | 2003-05-28 | 2005-09-02 | 삼성전자주식회사 | 플렉서블한 열 리던던시 스킴을 갖는 반도체 메모리 장치 |
| EP1748443B1 (de) * | 2005-07-28 | 2008-05-14 | STMicroelectronics S.r.l. | Halbleiterspeicher und sein Seitenpufferspeicher mit verbessertem Layout |
-
2005
- 2005-07-28 EP EP05106973A patent/EP1748443B1/de active Active
- 2005-07-28 DE DE602005006791T patent/DE602005006791D1/de active Active
-
2006
- 2006-07-25 US US11/459,831 patent/US7408819B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US7408819B2 (en) | 2008-08-05 |
| EP1748443A1 (de) | 2007-01-31 |
| US20070025148A1 (en) | 2007-02-01 |
| EP1748443B1 (de) | 2008-05-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8328 | Change in the person/name/address of the agent |
Representative=s name: KLUNKER, SCHMITT-NILSON, HIRSCH, 80797 MUENCHEN |
|
| 8364 | No opposition during term of opposition |