DE60137764D1 - Elektrisches filter - Google Patents

Elektrisches filter

Info

Publication number
DE60137764D1
DE60137764D1 DE60137764T DE60137764T DE60137764D1 DE 60137764 D1 DE60137764 D1 DE 60137764D1 DE 60137764 T DE60137764 T DE 60137764T DE 60137764 T DE60137764 T DE 60137764T DE 60137764 D1 DE60137764 D1 DE 60137764D1
Authority
DE
Germany
Prior art keywords
electric filter
filter
electric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60137764T
Other languages
English (en)
Inventor
Roger W Whatmore
Paul B Kirby
Qingxin Su
Eiju Komuro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Corp
Original Assignee
TDK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TDK Corp filed Critical TDK Corp
Application granted granted Critical
Publication of DE60137764D1 publication Critical patent/DE60137764D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02007Details of bulk acoustic wave devices
    • H03H9/02086Means for compensation or elimination of undesirable effects
    • H03H9/02094Means for compensation or elimination of undesirable effects of adherence
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46Filters
    • H03H9/54Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/58Multiple crystal filters
    • H03H9/60Electric coupling means therefor
    • H03H9/605Electric coupling means therefor consisting of a ladder configuration
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H03H2003/0414Resonance frequency
    • H03H2003/0421Modification of the thickness of an element
    • H03H2003/0435Modification of the thickness of an element of a piezoelectric layer
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H03H2003/0414Resonance frequency
    • H03H2003/045Modification of the area of an element
    • H03H2003/0457Modification of the area of an element of an electrode

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
DE60137764T 2000-05-24 2001-05-23 Elektrisches filter Expired - Lifetime DE60137764D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0012437.0A GB0012437D0 (en) 2000-05-24 2000-05-24 Improvements to filters
PCT/GB2001/002293 WO2001091290A1 (en) 2000-05-24 2001-05-23 Improvements to filters

Publications (1)

Publication Number Publication Date
DE60137764D1 true DE60137764D1 (de) 2009-04-09

Family

ID=9892141

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60137764T Expired - Lifetime DE60137764D1 (de) 2000-05-24 2001-05-23 Elektrisches filter

Country Status (8)

Country Link
US (1) US7046103B2 (de)
EP (1) EP1287613B1 (de)
JP (1) JP2003534696A (de)
CN (1) CN1205742C (de)
AU (1) AU5860701A (de)
DE (1) DE60137764D1 (de)
GB (1) GB0012437D0 (de)
WO (1) WO2001091290A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0014630D0 (en) * 2000-06-16 2000-08-09 Koninkl Philips Electronics Nv Bulk accoustic wave filter
GB0029090D0 (en) * 2000-11-29 2001-01-10 Univ Cranfield Improvements in or relating to filters
KR100622393B1 (ko) * 2005-07-05 2006-09-12 삼성전자주식회사 일 표면 상에 딤플이 제작된 공진부를 포함하는 벌크 음향공진기 및 그 제조방법
US7528681B2 (en) * 2005-12-20 2009-05-05 Palo Alto Research Center Incorporated Acoustic devices using an AlGaN piezoelectric region
JP5190841B2 (ja) 2007-05-31 2013-04-24 独立行政法人産業技術総合研究所 圧電体薄膜、圧電体およびそれらの製造方法、ならびに当該圧電体薄膜を用いた圧電体共振子、アクチュエータ素子および物理センサー
KR101375660B1 (ko) * 2008-02-22 2014-03-19 삼성전자주식회사 오버레이 ebg 구조를 이용한 공진기, 대역통과필터 및공진기의 제조방법
US8410868B2 (en) * 2009-06-04 2013-04-02 Sand 9, Inc. Methods and apparatus for temperature control of devices and mechanical resonating structures
US8476809B2 (en) 2008-04-29 2013-07-02 Sand 9, Inc. Microelectromechanical systems (MEMS) resonators and related apparatus and methods
US9048811B2 (en) 2009-03-31 2015-06-02 Sand 9, Inc. Integration of piezoelectric materials with substrates
CN109167128B (zh) * 2018-08-20 2021-01-26 武汉衍熙微器件有限公司 一种改善滤波器性能的方法及其滤波器
CN111600566B (zh) * 2020-04-21 2021-06-01 诺思(天津)微***有限责任公司 滤波器、体声波谐振器组件及其制造方法、电子设备

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS639141Y2 (de) * 1980-10-22 1988-03-18
US4320365A (en) 1980-11-03 1982-03-16 United Technologies Corporation Fundamental, longitudinal, thickness mode bulk wave resonator
US4818959A (en) * 1986-03-28 1989-04-04 Tdk Corporation Phase equalizer
US4837533A (en) 1987-07-22 1989-06-06 Toko Kabushiki Kaisha Ladder-type ceramic filter
JPH0513061Y2 (de) 1987-07-27 1993-04-06
JPH01314008A (ja) * 1988-06-13 1989-12-19 Ngk Spark Plug Co Ltd 梯子型圧電フィルタ
US5185589A (en) * 1991-05-17 1993-02-09 Westinghouse Electric Corp. Microwave film bulk acoustic resonator and manifolded filter bank
US5587620A (en) 1993-12-21 1996-12-24 Hewlett-Packard Company Tunable thin film acoustic resonators and method for making the same
US5471178A (en) 1994-02-03 1995-11-28 Motorola, Inc. Ladder filter and method for producing conjugately matched impedance
JP3371050B2 (ja) 1995-10-27 2003-01-27 三菱電機株式会社 薄膜圧電素子
JPH0964609A (ja) * 1995-08-23 1997-03-07 Murata Mfg Co Ltd 薄膜積層電極及びその製造方法
JP3087651B2 (ja) * 1996-06-03 2000-09-11 株式会社村田製作所 薄膜多層電極、高周波伝送線路、高周波共振器及び高周波フィルタ
US5939957A (en) 1996-07-26 1999-08-17 Ngk Spark Plug Co., Ltd. 6-elements ladder type piezoelectric filter
US6051907A (en) 1996-10-10 2000-04-18 Nokia Mobile Phones Limited Method for performing on-wafer tuning of thin film bulk acoustic wave resonators (FBARS)
US5910756A (en) * 1997-05-21 1999-06-08 Nokia Mobile Phones Limited Filters and duplexers utilizing thin film stacked crystal filter structures and thin film bulk acoustic wave resonators
JP3227649B2 (ja) * 1997-08-07 2001-11-12 株式会社村田製作所 弾性表面波フィルタ
JP3228223B2 (ja) * 1998-05-26 2001-11-12 株式会社村田製作所 弾性表面波フィルタ
JP3444218B2 (ja) * 1999-02-10 2003-09-08 株式会社村田製作所 誘電体共振器、誘電体フィルタ、誘電体デュプレクサ、発振器、通信機装置
JP3498204B2 (ja) * 1999-03-10 2004-02-16 株式会社村田製作所 弾性表面波フィルタ、それを用いた通信機装置
US6377136B1 (en) * 2000-02-04 2002-04-23 Agere Systems Guardian Corporation Thin film resonator filter having at least one component with different resonant frequency sets or electrode capacitance
JP3389911B2 (ja) * 2000-02-07 2003-03-24 株式会社村田製作所 弾性表面波フィルタ、共用器及び通信機
US6462631B2 (en) * 2001-02-14 2002-10-08 Agilent Technologies, Inc. Passband filter having an asymmetrical filter response

Also Published As

Publication number Publication date
US20020118078A1 (en) 2002-08-29
EP1287613B1 (de) 2009-02-25
CN1205742C (zh) 2005-06-08
CN1386320A (zh) 2002-12-18
US7046103B2 (en) 2006-05-16
AU5860701A (en) 2001-12-03
JP2003534696A (ja) 2003-11-18
GB0012437D0 (en) 2000-07-12
EP1287613A1 (de) 2003-03-05
WO2001091290A1 (en) 2001-11-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition