DE60116216D1 - Verfahren zur Reduzierung der Dielektrizitätskonstante in einer SiOC Schicht - Google Patents
Verfahren zur Reduzierung der Dielektrizitätskonstante in einer SiOC SchichtInfo
- Publication number
- DE60116216D1 DE60116216D1 DE60116216T DE60116216T DE60116216D1 DE 60116216 D1 DE60116216 D1 DE 60116216D1 DE 60116216 T DE60116216 T DE 60116216T DE 60116216 T DE60116216 T DE 60116216T DE 60116216 D1 DE60116216 D1 DE 60116216D1
- Authority
- DE
- Germany
- Prior art keywords
- reducing
- dielectric constant
- sioc layer
- sioc
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- Engineering & Computer Science (AREA)
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- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US679843 | 2000-10-05 | ||
US09/679,843 US6627532B1 (en) | 1998-02-11 | 2000-10-05 | Method of decreasing the K value in SiOC layer deposited by chemical vapor deposition |
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-
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Also Published As
Publication number | Publication date |
---|---|
US7074708B2 (en) | 2006-07-11 |
TW499709B (en) | 2002-08-21 |
KR20020027269A (ko) | 2002-04-13 |
US6784119B2 (en) | 2004-08-31 |
KR100857649B1 (ko) | 2008-09-08 |
EP1195451B1 (de) | 2005-12-28 |
EP1195451A1 (de) | 2002-04-10 |
US20040166665A1 (en) | 2004-08-26 |
US20040029400A1 (en) | 2004-02-12 |
JP2002198366A (ja) | 2002-07-12 |
DE60116216T2 (de) | 2006-08-31 |
US6627532B1 (en) | 2003-09-30 |
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