DE3888636D1 - Monolithische Schutzdiodenmontage und Schutzsysteme. - Google Patents
Monolithische Schutzdiodenmontage und Schutzsysteme.Info
- Publication number
- DE3888636D1 DE3888636D1 DE88420392T DE3888636T DE3888636D1 DE 3888636 D1 DE3888636 D1 DE 3888636D1 DE 88420392 T DE88420392 T DE 88420392T DE 3888636 T DE3888636 T DE 3888636T DE 3888636 D1 DE3888636 D1 DE 3888636D1
- Authority
- DE
- Germany
- Prior art keywords
- protection systems
- diode assembly
- protective diode
- monolithic protective
- monolithic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000001681 protective effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
- H01L27/1021—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components including diodes only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Emergency Protection Circuit Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8716605A FR2623663B1 (fr) | 1987-11-24 | 1987-11-24 | Assemblage monolithique de diodes de protection et systemes de protection |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3888636D1 true DE3888636D1 (de) | 1994-04-28 |
DE3888636T2 DE3888636T2 (de) | 1994-11-24 |
Family
ID=9357317
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3888636T Expired - Fee Related DE3888636T2 (de) | 1987-11-24 | 1988-11-24 | Monolithische Schutzdiodenmontage und Schutzsysteme. |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP0318404B1 (de) |
JP (1) | JP2791067B2 (de) |
KR (1) | KR890008979A (de) |
DE (1) | DE3888636T2 (de) |
FR (1) | FR2623663B1 (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2672732B1 (fr) * | 1991-02-12 | 1997-03-21 | Sgs Thomson Microelectronics | Structure monolithique comprenant deux ensembles de diodes de protection bidirectionnelles. |
FR2686737A1 (fr) * | 1992-01-29 | 1993-07-30 | Sgs Thomson Microelectronics | Composant de protection semiconducteur auto-protege. |
FR2687009B1 (fr) * | 1992-01-31 | 1994-04-29 | Sgs Thomson Microelectronics | Composant de protection pour circuit automobile. |
FR2689317B1 (fr) * | 1992-03-26 | 1994-06-17 | Sgs Thomson Microelectronics | Circuit integre constituant un reseau de diodes de protection. |
FR2704094B1 (fr) * | 1993-04-13 | 1995-07-07 | Sgs Thomson Microelectronics | Réseau de diodes monolithique. |
FR2705173B1 (fr) * | 1993-05-10 | 1995-07-28 | Sgs Thomson Microelectronics | Composant limiteur de courant serie. |
FR2708145B1 (fr) * | 1993-07-21 | 1995-10-06 | Sgs Thomson Microelectronics | Composant monolithique comprenant une diode de protection en parallèle avec une pluralité de paires de diodes en série. |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4216488A (en) * | 1978-07-31 | 1980-08-05 | Hutson Jearld L | Lateral semiconductor diac |
SE414357B (sv) * | 1978-08-17 | 1980-07-21 | Asea Ab | Overspenningsskydd for skydd av halvledarkomponenter av lageffekttyp |
EP0148577A1 (de) * | 1983-11-14 | 1985-07-17 | General Semiconductor Industries Inc. | Überspannungsschutz |
JPS60140878A (ja) * | 1983-12-28 | 1985-07-25 | Origin Electric Co Ltd | サージ吸収用半導体装置 |
FR2574595B1 (fr) * | 1984-12-11 | 1987-01-16 | Silicium Semiconducteur Ssc | Diac a electrodes coplanaires |
JPS61206269A (ja) * | 1985-03-11 | 1986-09-12 | Nec Corp | 半導体装置 |
-
1987
- 1987-11-24 FR FR8716605A patent/FR2623663B1/fr not_active Expired - Lifetime
-
1988
- 1988-11-08 KR KR1019880014656A patent/KR890008979A/ko not_active Application Discontinuation
- 1988-11-18 JP JP63290357A patent/JP2791067B2/ja not_active Expired - Lifetime
- 1988-11-24 EP EP88420392A patent/EP0318404B1/de not_active Expired - Lifetime
- 1988-11-24 DE DE3888636T patent/DE3888636T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0318404B1 (de) | 1994-03-23 |
FR2623663B1 (fr) | 1990-04-13 |
FR2623663A1 (fr) | 1989-05-26 |
JPH01222624A (ja) | 1989-09-05 |
DE3888636T2 (de) | 1994-11-24 |
KR890008979A (ko) | 1989-07-13 |
JP2791067B2 (ja) | 1998-08-27 |
EP0318404A1 (de) | 1989-05-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |