DE3888636D1 - Monolithische Schutzdiodenmontage und Schutzsysteme. - Google Patents

Monolithische Schutzdiodenmontage und Schutzsysteme.

Info

Publication number
DE3888636D1
DE3888636D1 DE88420392T DE3888636T DE3888636D1 DE 3888636 D1 DE3888636 D1 DE 3888636D1 DE 88420392 T DE88420392 T DE 88420392T DE 3888636 T DE3888636 T DE 3888636T DE 3888636 D1 DE3888636 D1 DE 3888636D1
Authority
DE
Germany
Prior art keywords
protection systems
diode assembly
protective diode
monolithic protective
monolithic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE88420392T
Other languages
English (en)
Other versions
DE3888636T2 (de
Inventor
Robert Pezzani
Patrice Jeudi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
SGS Thomson Microelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SA filed Critical SGS Thomson Microelectronics SA
Publication of DE3888636D1 publication Critical patent/DE3888636D1/de
Application granted granted Critical
Publication of DE3888636T2 publication Critical patent/DE3888636T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/102Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
    • H01L27/1021Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components including diodes only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0248Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)
DE3888636T 1987-11-24 1988-11-24 Monolithische Schutzdiodenmontage und Schutzsysteme. Expired - Fee Related DE3888636T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8716605A FR2623663B1 (fr) 1987-11-24 1987-11-24 Assemblage monolithique de diodes de protection et systemes de protection

Publications (2)

Publication Number Publication Date
DE3888636D1 true DE3888636D1 (de) 1994-04-28
DE3888636T2 DE3888636T2 (de) 1994-11-24

Family

ID=9357317

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3888636T Expired - Fee Related DE3888636T2 (de) 1987-11-24 1988-11-24 Monolithische Schutzdiodenmontage und Schutzsysteme.

Country Status (5)

Country Link
EP (1) EP0318404B1 (de)
JP (1) JP2791067B2 (de)
KR (1) KR890008979A (de)
DE (1) DE3888636T2 (de)
FR (1) FR2623663B1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2672732B1 (fr) * 1991-02-12 1997-03-21 Sgs Thomson Microelectronics Structure monolithique comprenant deux ensembles de diodes de protection bidirectionnelles.
FR2686737A1 (fr) * 1992-01-29 1993-07-30 Sgs Thomson Microelectronics Composant de protection semiconducteur auto-protege.
FR2687009B1 (fr) * 1992-01-31 1994-04-29 Sgs Thomson Microelectronics Composant de protection pour circuit automobile.
FR2689317B1 (fr) * 1992-03-26 1994-06-17 Sgs Thomson Microelectronics Circuit integre constituant un reseau de diodes de protection.
FR2704094B1 (fr) * 1993-04-13 1995-07-07 Sgs Thomson Microelectronics Réseau de diodes monolithique.
FR2705173B1 (fr) * 1993-05-10 1995-07-28 Sgs Thomson Microelectronics Composant limiteur de courant serie.
FR2708145B1 (fr) * 1993-07-21 1995-10-06 Sgs Thomson Microelectronics Composant monolithique comprenant une diode de protection en parallèle avec une pluralité de paires de diodes en série.

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4216488A (en) * 1978-07-31 1980-08-05 Hutson Jearld L Lateral semiconductor diac
SE414357B (sv) * 1978-08-17 1980-07-21 Asea Ab Overspenningsskydd for skydd av halvledarkomponenter av lageffekttyp
EP0148577A1 (de) * 1983-11-14 1985-07-17 General Semiconductor Industries Inc. Überspannungsschutz
JPS60140878A (ja) * 1983-12-28 1985-07-25 Origin Electric Co Ltd サージ吸収用半導体装置
FR2574595B1 (fr) * 1984-12-11 1987-01-16 Silicium Semiconducteur Ssc Diac a electrodes coplanaires
JPS61206269A (ja) * 1985-03-11 1986-09-12 Nec Corp 半導体装置

Also Published As

Publication number Publication date
EP0318404B1 (de) 1994-03-23
FR2623663B1 (fr) 1990-04-13
FR2623663A1 (fr) 1989-05-26
JPH01222624A (ja) 1989-09-05
DE3888636T2 (de) 1994-11-24
KR890008979A (ko) 1989-07-13
JP2791067B2 (ja) 1998-08-27
EP0318404A1 (de) 1989-05-31

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee