DE3851029D1 - Verfahren um eine mit Ionen implantierte organische Harzschicht während der Herstellung von Halbleiterbauelemente zu entfernen. - Google Patents
Verfahren um eine mit Ionen implantierte organische Harzschicht während der Herstellung von Halbleiterbauelemente zu entfernen.Info
- Publication number
- DE3851029D1 DE3851029D1 DE3851029T DE3851029T DE3851029D1 DE 3851029 D1 DE3851029 D1 DE 3851029D1 DE 3851029 T DE3851029 T DE 3851029T DE 3851029 T DE3851029 T DE 3851029T DE 3851029 D1 DE3851029 D1 DE 3851029D1
- Authority
- DE
- Germany
- Prior art keywords
- ion
- manufacture
- resin layer
- semiconductor devices
- organic resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000011347 resin Substances 0.000 title 1
- 229920005989 resin Polymers 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/3115—Doping the insulating layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/083—Ion implantation, general
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62259998A JPH0626201B2 (ja) | 1987-10-15 | 1987-10-15 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3851029D1 true DE3851029D1 (de) | 1994-09-15 |
DE3851029T2 DE3851029T2 (de) | 1994-12-01 |
Family
ID=17341874
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3851029T Expired - Fee Related DE3851029T2 (de) | 1987-10-15 | 1988-09-19 | Verfahren um eine mit Ionen implantierte organische Harzschicht während der Herstellung von Halbleiterbauelemente zu entfernen. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4861732A (de) |
EP (1) | EP0311817B1 (de) |
JP (1) | JPH0626201B2 (de) |
KR (1) | KR920003310B1 (de) |
DE (1) | DE3851029T2 (de) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4987008A (en) * | 1985-07-02 | 1991-01-22 | Semiconductor Energy Laboratory Co., Ltd. | Thin film formation method |
JP2541851B2 (ja) * | 1989-03-10 | 1996-10-09 | 富士通株式会社 | 有機物の剥離方法 |
JP3152430B2 (ja) * | 1990-10-09 | 2001-04-03 | クロリンエンジニアズ株式会社 | 有機物被膜の除去方法 |
US5240878A (en) * | 1991-04-26 | 1993-08-31 | International Business Machines Corporation | Method for forming patterned films on a substrate |
JPH04352157A (ja) * | 1991-05-30 | 1992-12-07 | Toyota Autom Loom Works Ltd | レジスト除去方法 |
US5209815A (en) * | 1991-06-06 | 1993-05-11 | International Business Machines Corporation | Method for forming patterned films on a substrate |
JP3391410B2 (ja) * | 1993-09-17 | 2003-03-31 | 富士通株式会社 | レジストマスクの除去方法 |
JP4417439B2 (ja) * | 1994-06-29 | 2010-02-17 | フリースケール セミコンダクター インコーポレイテッド | エッチング・ストップ層を利用する半導体装置構造とその方法 |
TW460748B (en) * | 1998-05-26 | 2001-10-21 | Matsushita Electronics Corp | Capacitor and method for fabricating the same |
US20020132491A1 (en) * | 1998-12-31 | 2002-09-19 | John E. Lang | Method of removing photoresist material with dimethyl sulfoxide |
US7270724B2 (en) | 2000-12-13 | 2007-09-18 | Uvtech Systems, Inc. | Scanning plasma reactor |
US6773683B2 (en) * | 2001-01-08 | 2004-08-10 | Uvtech Systems, Inc. | Photocatalytic reactor system for treating flue effluents |
JP2006507667A (ja) * | 2002-09-18 | 2006-03-02 | マットソン テクノロジイ インコーポレイテッド | 材料を除去するためのシステムおよび方法 |
US7334918B2 (en) * | 2003-05-07 | 2008-02-26 | Bayco Products, Ltd. | LED lighting array for a portable task light |
FR2856514A1 (fr) * | 2003-06-20 | 2004-12-24 | St Microelectronics Sa | Procede de formation selective de siliciure sur une plaque de materiau semi-conducteur |
US7799685B2 (en) * | 2003-10-13 | 2010-09-21 | Mattson Technology, Inc. | System and method for removal of photoresist in transistor fabrication for integrated circuit manufacturing |
US7361605B2 (en) * | 2004-01-20 | 2008-04-22 | Mattson Technology, Inc. | System and method for removal of photoresist and residues following contact etch with a stop layer present |
US20110061679A1 (en) * | 2004-06-17 | 2011-03-17 | Uvtech Systems, Inc. | Photoreactive Removal of Ion Implanted Resist |
US20070054492A1 (en) * | 2004-06-17 | 2007-03-08 | Elliott David J | Photoreactive removal of ion implanted resist |
US20050279453A1 (en) * | 2004-06-17 | 2005-12-22 | Uvtech Systems, Inc. | System and methods for surface cleaning |
KR100801150B1 (ko) * | 2006-06-26 | 2008-02-11 | (주)엠아이반도체 | 패키지된 반도체 및 전자부품의 몰딩수지 제거장치 및몰딩수지 제거방법 |
DE102006062035B4 (de) | 2006-12-29 | 2013-02-07 | Advanced Micro Devices, Inc. | Verfahren zum Entfernen von Lackmaterial nach einer Implantation mit hoher Dosis in einem Halbleiterbauelement |
CN102968003B (zh) * | 2012-11-29 | 2015-03-18 | 上海华力微电子有限公司 | 光刻胶的去除方法 |
CN107885048A (zh) * | 2017-09-19 | 2018-04-06 | 合肥惠科金扬科技有限公司 | 一种tft‑lcd屏制造过程中光刻胶的去除方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4115120A (en) * | 1977-09-29 | 1978-09-19 | International Business Machines Corporation | Method of forming thin film patterns by differential pre-baking of resist |
JPS5598828A (en) * | 1979-01-24 | 1980-07-28 | Hitachi Ltd | Removing method of thin organic film |
US4353778A (en) * | 1981-09-04 | 1982-10-12 | International Business Machines Corporation | Method of etching polyimide |
JPS58123726A (ja) * | 1982-01-18 | 1983-07-23 | Toshiba Corp | レジストの灰化方法 |
US4428796A (en) * | 1982-08-02 | 1984-01-31 | Fairchild Camera And Instrument Corporation | Adhesion bond-breaking of lift-off regions on semiconductor structures |
US4851691A (en) * | 1982-11-19 | 1989-07-25 | Varian Associates, Inc. | Method for photoresist pretreatment prior to charged particle beam processing |
JPH0622220B2 (ja) * | 1984-11-19 | 1994-03-23 | 富士通株式会社 | レジスト灰化方法 |
US4679308A (en) * | 1984-12-14 | 1987-07-14 | Honeywell Inc. | Process for controlling mobile ion contamination in semiconductor devices |
JPH101439A (ja) * | 1996-06-11 | 1998-01-06 | Mochida Pharmaceut Co Ltd | 神経変性疾患治療剤 |
JPH114742A (ja) * | 1997-06-18 | 1999-01-12 | Isoo Kuriki | でっぱり付き口縁に開口部付き高台の器 |
-
1987
- 1987-10-15 JP JP62259998A patent/JPH0626201B2/ja not_active Expired - Lifetime
-
1988
- 1988-09-13 US US07/243,907 patent/US4861732A/en not_active Expired - Fee Related
- 1988-09-19 DE DE3851029T patent/DE3851029T2/de not_active Expired - Fee Related
- 1988-09-19 EP EP88115352A patent/EP0311817B1/de not_active Expired - Lifetime
- 1988-10-14 KR KR1019880013427A patent/KR920003310B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JPH0626201B2 (ja) | 1994-04-06 |
JPH01101633A (ja) | 1989-04-19 |
US4861732A (en) | 1989-08-29 |
KR890007372A (ko) | 1989-06-19 |
EP0311817A2 (de) | 1989-04-19 |
DE3851029T2 (de) | 1994-12-01 |
EP0311817B1 (de) | 1994-08-10 |
EP0311817A3 (en) | 1990-06-13 |
KR920003310B1 (ko) | 1992-04-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3851029D1 (de) | Verfahren um eine mit Ionen implantierte organische Harzschicht während der Herstellung von Halbleiterbauelemente zu entfernen. | |
DE3767431D1 (de) | Verfahren zur herstellung von halbleiterbauelementen. | |
DE3587830D1 (de) | Apparat zur Herstellung von Halbleiteranordnungen. | |
DE3750076D1 (de) | Verfahren zur Veränderung der Eigenschften von Halbleitern. | |
DE3780476D1 (de) | Verfahren zur epoxydation von olefinischen verbindungen. | |
DE3751333D1 (de) | Verfahren zum Entfernen von Photoresists auf Halbleitersubstraten. | |
DE3783918D1 (de) | Verfahren zur herstellung von iodierten aromatischen verbindungen. | |
DE3766300D1 (de) | Verfahren zur herstellung von imidazopyridinen. | |
DE3853397D1 (de) | Verfahren zum schleierfreien Polieren von Halbleiterscheiben. | |
DE3888937D1 (de) | Verfahren zum Herstellen von integrierten Schaltungen mit FET. | |
DE3769971D1 (de) | Verfahren zum formen von vorgehaerteten hochtemperaturharzen. | |
DE58907710D1 (de) | Verfahren zur Konservierung der Oberfläche von Siliciumscheiben. | |
DE3884507D1 (de) | Verfahren zur herstellung von optisch aktiven sekundaeren aminen. | |
DE3774052D1 (de) | Verfahren zur bildung von siliziumoxynitridschichten auf siliziumsubstraten. | |
DE69017332D1 (de) | Verfahren zum Herstellen einer eine Mesa enthaltenden Halbleiteranordnung. | |
DE3485089D1 (de) | Verfahren zur herstellung von halbleitervorrichtungen. | |
DE3850647D1 (de) | Verfahren zur herstellung von isocyanat-verbindungen. | |
DE3780052D1 (de) | Verfahren zum aufbringen von schutzschichten. | |
DE68917003D1 (de) | Verfahren zur Herstellung von Halbleiterbauelementen, die gegen Musterverunreinigungen geschützt sind. | |
DE68914572D1 (de) | Verfahren zum Herstellen von Halbleitervorrichtungen. | |
DE3878090D1 (de) | Verfahren zur herstellung von supraleitenden schaltungen. | |
DE3789680D1 (de) | Verfahren zur Herstellung von Halbleiterbauelementen. | |
DE3852623D1 (de) | Verfahren zur Herstellung von Schottky-Verbundhalbleiterbauelement. | |
DE3878218D1 (de) | Verfahren zur herstellung von halogenierten aromatischen primaeren aminen. | |
DE3888037D1 (de) | Verfahren zur Herstellung von Halbleiterbauelementen wobei eine Oberfläche einer Halbleiterstruktur selektiv behandelt wird. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |