DE3641688A1 - Verfahren zur qualitaetspruefung einer elektrodenschicht eines halbleiterbauelements - Google Patents

Verfahren zur qualitaetspruefung einer elektrodenschicht eines halbleiterbauelements

Info

Publication number
DE3641688A1
DE3641688A1 DE19863641688 DE3641688A DE3641688A1 DE 3641688 A1 DE3641688 A1 DE 3641688A1 DE 19863641688 DE19863641688 DE 19863641688 DE 3641688 A DE3641688 A DE 3641688A DE 3641688 A1 DE3641688 A1 DE 3641688A1
Authority
DE
Germany
Prior art keywords
electrode layer
depth
ball
copper
wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19863641688
Other languages
English (en)
Other versions
DE3641688C2 (de
Inventor
Kazumichi Machida
Jitsuho Hirota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP60291084A external-priority patent/JPS62150730A/ja
Priority claimed from JP61017348A external-priority patent/JPS62174936A/ja
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE3641688A1 publication Critical patent/DE3641688A1/de
Application granted granted Critical
Publication of DE3641688C2 publication Critical patent/DE3641688C2/de
Granted legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
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    • G01N3/00—Investigating strength properties of solid materials by application of mechanical stress
    • G01N3/40—Investigating hardness or rebound hardness
    • G01N3/42—Investigating hardness or rebound hardness by performing impressions under a steady load by indentors, e.g. sphere, pyramid
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Description

Die vorliegende Erfindung betrifft ein Verfahren zur Qualitätsprüfung einer Elektrode eines Halbleiter­ bauelements, wie eines ICs (integrierte Schaltung) und eines diskreten oder Einzelhalbleiter-Bauelements, welches über einen Metalldraht an eine Leitung, bei­ spielsweise eine Leiterbahn, angeschlossen werden soll.
Die Fig. 1 zeigt ein Verfahren zum Bondieren eines Drahtes auf einem Halbleiterbauelement, d. h. zum Her­ stellen einer Kontaktverbindung zwischen Draht und Halbleiterbauelement. Diese Drahtbondierung oder Draht­ kontaktierung soll eine auf einem Halbleiterchip 2 ausgebildete Aluminiumelektrode 3 mittels eines Gold­ drahts 1 mit einer Leitung 4 aus einer Kupferlegierung verbinden, wobei diese Leitung einer Oberflächenbe­ handlung, wie beispielsweise einer metallischen Über­ ziehung mit Silber, unterzogen worden ist und ein haarröhrenförmiger Körper, d. h. ein Kapillarteil, das als Bondierungswerkzeug dient, verwendet wird.
Um eine solche Verbindung zu erzielen, wird ein Ende des Golddrahtes 1 durch eine Lichtbogenheizein­ wirkung zum Fließen bzw. Schmelzen gebracht, woraufhin man es zu einer Kugel 1 a festwerden oder erstarren läßt. Anschließend wird die Kugel 1 a durch Kugelthermokom­ pression an die Aluminiumelektrode angeheftet (Fig. 1a und 1b). Daraufhin wird der Draht 1 abgeleitet und durch eine Steppkontaktierung (Fig. 1c und 1d) mit der Leitung 4 verbunden. Häufig wird zum Bondieren des Drahtes 1 das Thermoschallverfahren angewendet.
Da das für den Draht benutzte Gold teuer ist und eine langfristige Zuverlässigkeit und Dauerhaftigkeit der Verbindung zwischen Golddraht und Aluminiumelektrode nicht ausreichend hoch sind, werden im folgenden ver­ schiedene alternative Materialien und Bondierungstech­ niken näher untersucht.
Ein in Betracht zu ziehendes Ersatzmaterial ist Kupfer. Ein mit Kupfer verbundenes Problem besteht jedoch in der schlechteren Bondierkontaktierfähigkeit von Kupferdrähten an Aluminiumelektroden. Eine Erhöhung der Leistung einer Ultraschallschwingung bei einem Versuch, die Bondierung zu unterstützen, wird Aluminium, wie durch die Bezugszahl 3 a in Fig. 2 angedeutet, nach außen getrieben. In diesem Fall kann es dazu kommen, daß die Kugel 10 a des Kupferdrahtes 10 auf den Halb­ leiterchip stößt. Auf diese Weise könnten die Elek­ trode 3 und der Halbleiterchip 2 beschädigt oder zer­ stört werden.
Um dieses Problem zu lösen, könnten unterschied­ liche Maßnahmen getroffen werden. Beispielsweise könnten die Qualität, d. h. die Eigenschaften, des Aluminiums eingestellt werden. Jedoch ist es im Hin­ blick auf die Tatsache, daß Halbleiterbauelemente zumeist in Massenproduktion gefertigt werden, not­ wendig, die Qualität der Bondierfähigkeit der Alumi­ niumelektrodenschicht zu prüfen und auszuwerten und die gewünschte Qualität, d. h. die gewünschten Eigen­ schaften, aufrecht zu erhalten.
Für eine genaue Bewertung der Bondierfähigkeit müssen verschiedene Prüfungen oder Tests durchgeführt werden, einschließlich eines Tests bezüglich der Bondierkontaktfestigkeit und einer Untersuchung, mit der festgestellt wird, wie die Legierungsschicht aus­ gebildet ist und wie die Aluminiumschicht deformiert und ausgetrieben oder weggedrückt wird. Diese Unter­ suchung kann erfolgen, indem der Querschnitt des bondierten Bereichs betrachtet wird. Die Bondier­ kontaktfestigkeit kann mittels eines Schlag- oder Stoßtests (push test) zur Messung der Scherfestigkeit des bondierten Bereichs gemessen werden. 0,392 N (40 gf=gram force) oder auch eine größere Kraft entspricht einem in typischer Weise erforderlichen Schwellwert der Bruchbelastung. Zur Prüfung der Elek­ trode zum Zweck einer Qualitätskontrolle während der Massenproduktion ist jedoch ein einfacheres Testverfahren wünschenswert.
Ein bekanntes Verfahren zur Qualitätsprüfung von Aluminium im Hinblick auf die Bondierfähigkeit besteht in der Messung der Härte (Knoop-Härte). Jedoch wird diese Messung für eine von der tatsäch­ lichen Bondierung verschiedene Situation durchge­ führt. Darüber hinaus ist der Meßfehler für eine sehr geringe Last beträchtlich. Die sehr geringe oder leichte Last muß verwendet werden, da die Last bei der Bondierung sehr gering ist, und die Messung differiert in Abhängigkeit von der Größe der Last.
Der vorliegenden Erfindung liegt die Aufgabe zugrunde, ein Verfahren zur Qualitätsprüfung anzu­ geben, welches einen geringeren Fehler aufweist.
Die Erfinder fanden heraus, daß, wenn eine Kugel aus einem dem Material des Kontaktdrahtes identischen oder ähnlichen Material unter Verwendung einer Bon­ dierkapillare gegen eine Elektrode gepreßt wird, die Tiefe der resultierenden Einbeulung der Elektrode eine gute Korrelation, d. h. eine korrelierte Bezie­ hung, zur Bondierfähigkeit aufweist.
Es wird infolgedessen davon ausgegangen, daß, wenn man die Tiefe einer infolge des Anpressens einer Kupferkugel unter Benutzung einer Bondierkapil­ lare entstehenden Einbeulung der Elektrode mißt, die Bondierfähigkeit der Elektrode genau geprüft ist.
Entsprechend der Erfindung wird ein Verfahren zur Qualitätsprüfung einer Elektrodenschicht eines Halbleiterbauelementes, auf welches ein Kontaktdraht bondiert werden soll, angegeben, welches Verfahren als Verfahrensschritte aufweist: Anpressen einer Kugel aus einem dem Material des Kontaktdrahtes identischen oder ähnlichen Material unter Verwendung einer Bon­ dierkapillare gegen die Elektrodenschicht und Messen der Tiefe einer infolge dieses Anpressens entstehen­ den Einbeulung der Elektrodenschicht.
Im folgenden wird die Erfindung an Hand der Zeichnungen näher erläutert. Es zeigen:
Fig. 1 in schematischer Weise, wie die Draht­ bondierung durchgeführt wird,
Fig. 2 die Deformation einer Elektrodenschicht,
Fig. 3 wie eine Kugel während eines Verfah­ rensschritts der Qualitätsprüfung gemäß der Erfindung gegen eine Elektrodenschicht gepreßt wird,
Fig. 4 einen Querschnittsteil der Elektroden­ schicht, die in diesem Teil eingebeult ist,
Fig. 5 einen Bereich für zufriedenstellende Bedingungen in Abhängigkeit von Last und Tiefe der Einbeulung und
Fig. 6 einen Bereich für zufriedenstellende Bedingungen in Abhängigkeit der Amplitude der Ultra­ schallschwingung und der Tiefe der Einbeulung.
In Fig. 3 ist ein Ausführungsbeispiel der Er­ findung dargestellt. Den in den Fig. 1 und 2 verwen­ deten Bezugszahlen identische Bezugszahlen dieser Fig. 3 bezeichnen identische oder ähnliche Teile.
Entsprechend diesem Ausführungsbeispiel wird eine Kugel 14 aus einem dem Material des Drahtes identischen oder ähnlichen Material unter Benutzung einer Kapillare 5 gegen eine dünne Elektrodenschicht 3 gepreßt, die sich auf einem Halbleiterchip 2 (Fig. 3) befindet. Das Ausmaß der resultierenden Deformation, d. h. die Tiefe D der resultierenden Einbeulung oder Einbuchtung (Fig. 4) wird gemessen.
Die Tiefe dieser Einbeulung kann gemessen werden, indem mit Hilfe eines Mikroskops der in Fig. 4 darge­ stellte Querschnitt, der durch Schleifen des Bereichs B der zu bondierenden Elektrode hergestellt wird, unter­ sucht wird. Die mit dem Mikroskop beobachtete Höhen­ differenz zwischen dem Bondierungsbereich B und den ihn umgebenden Bereichen S, d. h. den Bereichen, die nicht zu kontaktieren sind, entspricht der Tiefe D der Einbeulung.
Die Bondierfähigkeit der Schicht wird aus dieser Tiefe D bewertet und geprüft.
In einem Beispiel wurde ermittelt, daß bei Anpres­ sen einer reinen Kupferkugel 14 eines Durchmessers von 70 bis 75 µm mit einer Kraft von 1,96 bis 2,94 N (200 bis 300 gf) an eine Elektrode 3 und bei einer resultierenden Tiefe der Einbeulung innerhalb eines Bereichs von 0,1 bis 0,6 µm der Kupferdraht 10 gut an die Elektrode 3 bondiert werden kann. Dies ist in Fig. 5 dargestellt, in welcher der schraffierte Bereich den Bereich für solche Bedingungen anzeigt, für die eine gute Bondierfähigkeit und Kontaktierung erzielt wird. Liegt entsprechend dieser Darstellung die ge­ messene Tiefe der Einbeulung innerhalb des Bereichs von 0,1 bis 0,6 µm, so wird angenommen, daß die Bondierfähigkeit der Schicht gut ist. Befindet sich die gemessene Tiefe außerhalb dieses Bereichs, so wird die Bondierfähigkeit nicht mehr als gut ange­ sehen.
Wird die Bondierfähigkeit nicht für gut befun­ den, so kann eine Maßnahme zur Änderung der Eigenschaft oder der Qualität der Aluminiumschicht der Halbleiter­ bauelemente, die in Massenproduktion hergestellt wer­ den, getroffen werden, so daß die nächstfolgend pro­ duzierten Halbleiterbauelemente eine Aluminiumschicht mit einer guten Bondierfähigkeit aufweisen. Die Eigen­ schaften und die Qualität der Aluminiumschicht kann durch die Bedingungen, unter denen das Aluminium ange­ lagert wird, d. h. beispielsweise die Anlagerungs- oder Abscheidungsrate und die Feinheit oder das Ausmaß des eingestellten Vakuums verändert werden. Wird beispiels­ weise die Anlagerungsrate vermindert, so wird die Alu­ miniumschicht härter und kann infolgedessen nur mehr schwerer deformiert werden.
Eine andere Maßnahme, die alternativ oder auch zusätzlich zu der oben erwähnten Maßnahme getroffen werden kann, besteht in der Änderung der Bedingungen eines nach der Bondierung durchgeführten Prozesses. Beispielsweise können die Bedingungen für ein Sintern der Bondiergrenzflächen so verändert werden, daß eine Abweichung von der gewünschten Bondierfähigkeit kom­ pensiert und auf diese Weise die Beschaffenheit der bondierten Bereiche optimiert wird.
In einem weiteren Ausführungsbeispiel der vor­ liegenden Erfindung werden der Kupferkugel, während sie gegen die Elektrode gedrückt oder gepreßt wird, Ultraschallwellen oder -schwingungen zugeführt. In diesem Fall kann die Druckkraft vermindert werden. Beispielsweise ist ermittelt worden, daß, wenn eine reine Kupferkugel eines Durchmessers von 70 bis 75 µm mit einer Druckkraft von ungefähr 1,47 N (150 gf) gegen eine Elektrode gepreßt wird, während eine Ultraschallschwingung von 60 kHz mit einer Amplitude von 0,07 bis 0,14 µm bei einer Temperatur von 350°C angewandt wird, und wenn die Tiefe der resultierenden Einbeulung innerhalb eines Bereiches von 0,1 bis 0,6 µm liegt, der Kupferdraht 10 gut an die Elektrode 3 bondiert werden kann. Dies ist in Fig. 6 dargestellt, in der der schraffierte Bereich den Bereich für Be­ dingungen darstellt, bei denen die gute Kontaktier­ fähigkeit erzielt wird. Liegt entsprechend dieser Darstellung die gemessene Tiefe in der Einbeulung im Bereich von 0,1 bis 0,6 µm, so wird davon ausgegangen, daß die Bondierfähigkeit gut ist. Liegt jedoch die gemessene Tiefe außerhalb dieses Bereichs, so wird die Bondierfähigkeit oder Kontaktfähigkeit als nicht gut angesehen.
Im letzteren Fall einer nicht für gut befundenen Bondierfähigkeit können eine oder mehrere den in Ver­ bindung mit dem ersten Ausführungsbeispiel beschrie­ benen Maßnahmen ähnliche Maßnahmen ergriffen werden.
Wie aus der Beschreibung hervorgeht, wird im erfindungsgemäßen Verfahren die Messung unter einer Bedingung durchgeführt, die der Bedingung, bei der die tatsächliche Bondierung erfolgt, ähnlich ist. Infolgedessen ist die Bewertung oder Qualitätsprü­ fung genau und zuverlässig.

Claims (8)

1. Verfahren zur Qualitätsprüfung einer Elektroden­ schicht eines Halbleiterbauelements, auf welches ein Kontaktdraht bondiert werden soll, gekennzeichnet durch die folgenden Verfahrensschritte:
Anpressen einer Kugel aus einem dem Material des Kontaktdrahtes identischen oder ähnlichen Material unter Verwendung einer Bondierkapillare gegen die Elektrodenschicht und
Messen der Tiefe einer infolge dieses Anpressens entstehenden Einbeulung der Elektrodenschicht.
2. Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß der Kugel, während sie gegen die Elektrodenschicht gepreßt wird, eine Ultraschallschwingung zugeführt wird.
3. Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß die Elektrodenschicht aus Aluminium gebildet ist.
4. Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß der Kontaktdraht aus Kupfer oder Kupferlegierung hergestellt ist.
5. Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß die Elektrodenschicht aus Aluminium, der Kontakt­ draht aus Kupfer oder Kupferlegierung und die Kugel aus Kupfer gebildet sind, wobei diese Kugel einen Durchmesser von ungefähr 70 bis 75 µm aufweist und mit einer Kraft von 1,96 bis 2,94 N (200 bis 300 gf) angepreßt wird.
6. Verfahren nach Anspruch 5, dadurch gekennzeichnet, daß diese Messung so durchgeführt wird, daß festgestellt wird, ob die Tiefe der Einbeulung innerhalb eines Be­ reichs von 0,1 bis 0,6 µm liegt oder nicht.
7. Verfahren nach Anspruch 5, dadurch gekennzeichnet, daß eine Ultraschallschwingung von ungefähr 60 kHz mit einer Amplitude von 0,07 bis 0,14 µm angewandt wird.
8. Verfahren nach Anspruch 7, dadurch gekennzeichnet, daß diese Messung so durchgeführt wird, daß festgestellt wird, ob die Tiefe der Einbeulung innerhalb eines Be­ reichs von 0,1 bis 0,6 µm liegt oder nicht.
DE19863641688 1985-12-24 1986-12-06 Verfahren zur qualitaetspruefung einer elektrodenschicht eines halbleiterbauelements Granted DE3641688A1 (de)

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JP60291084A JPS62150730A (ja) 1985-12-24 1985-12-24 半導体装置の評価方法
JP61017348A JPS62174936A (ja) 1986-01-28 1986-01-28 半導体装置の評価方法

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DE102007030951B4 (de) * 2007-07-04 2011-05-12 Fachhochschule Augsburg Vorrichtung für die Bestimmung von mechanischen Eigenschaften eines zu untersuchenden Objekts

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Copper Wire Bonding, John Kurtz a. all. Fairchaild Semiconductor Corp. South Portland, Maine *

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Publication number Priority date Publication date Assignee Title
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