DE3641688A1 - Verfahren zur qualitaetspruefung einer elektrodenschicht eines halbleiterbauelements - Google Patents
Verfahren zur qualitaetspruefung einer elektrodenschicht eines halbleiterbauelementsInfo
- Publication number
- DE3641688A1 DE3641688A1 DE19863641688 DE3641688A DE3641688A1 DE 3641688 A1 DE3641688 A1 DE 3641688A1 DE 19863641688 DE19863641688 DE 19863641688 DE 3641688 A DE3641688 A DE 3641688A DE 3641688 A1 DE3641688 A1 DE 3641688A1
- Authority
- DE
- Germany
- Prior art keywords
- electrode layer
- depth
- ball
- copper
- wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N3/00—Investigating strength properties of solid materials by application of mechanical stress
- G01N3/40—Investigating hardness or rebound hardness
- G01N3/42—Investigating hardness or rebound hardness by performing impressions under a steady load by indentors, e.g. sphere, pyramid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/03—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2203/00—Investigating strength properties of solid materials by application of mechanical stress
- G01N2203/0098—Tests specified by its name, e.g. Charpy, Brinnel, Mullen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05556—Shape in side view
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05639—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4807—Shape of bonding interfaces, e.g. interlocking features
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4845—Details of ball bonds
- H01L2224/48451—Shape
- H01L2224/48453—Shape of the interface with the bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
- H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/48617—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
- H01L2224/48624—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
- H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/48638—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/48639—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
- H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/48638—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/48647—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
- H01L2224/487—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/48717—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
- H01L2224/48724—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
- H01L2224/487—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/48738—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/48739—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
- H01L2224/487—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/48738—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/48747—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
- H01L2224/488—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/48838—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/48839—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
- H01L2224/488—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/48838—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/48847—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
- H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/85447—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01058—Cerium [Ce]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/201—Temperature ranges
- H01L2924/20109—Temperature range 350 C=<T<400 C, 623.15K =<T< 673.15K
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/203—Ultrasonic frequency ranges, i.e. KHz
- H01L2924/20303—Ultrasonic frequency [f] 50 Khz=<f< 75 KHz
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Wire Bonding (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
Die vorliegende Erfindung betrifft ein Verfahren
zur Qualitätsprüfung einer Elektrode eines Halbleiter
bauelements, wie eines ICs (integrierte Schaltung) und
eines diskreten oder Einzelhalbleiter-Bauelements,
welches über einen Metalldraht an eine Leitung, bei
spielsweise eine Leiterbahn, angeschlossen werden soll.
Die Fig. 1 zeigt ein Verfahren zum Bondieren eines
Drahtes auf einem Halbleiterbauelement, d. h. zum Her
stellen einer Kontaktverbindung zwischen Draht und
Halbleiterbauelement. Diese Drahtbondierung oder Draht
kontaktierung soll eine auf einem Halbleiterchip 2
ausgebildete Aluminiumelektrode 3 mittels eines Gold
drahts 1 mit einer Leitung 4 aus einer Kupferlegierung
verbinden, wobei diese Leitung einer Oberflächenbe
handlung, wie beispielsweise einer metallischen Über
ziehung mit Silber, unterzogen worden ist und ein
haarröhrenförmiger Körper, d. h. ein Kapillarteil, das
als Bondierungswerkzeug dient, verwendet wird.
Um eine solche Verbindung zu erzielen, wird ein
Ende des Golddrahtes 1 durch eine Lichtbogenheizein
wirkung zum Fließen bzw. Schmelzen gebracht, woraufhin
man es zu einer Kugel 1 a festwerden oder erstarren läßt.
Anschließend wird die Kugel 1 a durch Kugelthermokom
pression an die Aluminiumelektrode angeheftet (Fig. 1a
und 1b). Daraufhin wird der Draht 1 abgeleitet und
durch eine Steppkontaktierung (Fig. 1c und 1d) mit der
Leitung 4 verbunden. Häufig wird zum Bondieren des
Drahtes 1 das Thermoschallverfahren angewendet.
Da das für den Draht benutzte Gold teuer ist und
eine langfristige Zuverlässigkeit und Dauerhaftigkeit
der Verbindung zwischen Golddraht und Aluminiumelektrode
nicht ausreichend hoch sind, werden im folgenden ver
schiedene alternative Materialien und Bondierungstech
niken näher untersucht.
Ein in Betracht zu ziehendes Ersatzmaterial ist
Kupfer. Ein mit Kupfer verbundenes Problem besteht
jedoch in der schlechteren Bondierkontaktierfähigkeit
von Kupferdrähten an Aluminiumelektroden. Eine Erhöhung
der Leistung einer Ultraschallschwingung bei einem
Versuch, die Bondierung zu unterstützen, wird Aluminium,
wie durch die Bezugszahl 3 a in Fig. 2 angedeutet, nach
außen getrieben. In diesem Fall kann es dazu kommen,
daß die Kugel 10 a des Kupferdrahtes 10 auf den Halb
leiterchip stößt. Auf diese Weise könnten die Elek
trode 3 und der Halbleiterchip 2 beschädigt oder zer
stört werden.
Um dieses Problem zu lösen, könnten unterschied
liche Maßnahmen getroffen werden. Beispielsweise
könnten die Qualität, d. h. die Eigenschaften, des
Aluminiums eingestellt werden. Jedoch ist es im Hin
blick auf die Tatsache, daß Halbleiterbauelemente
zumeist in Massenproduktion gefertigt werden, not
wendig, die Qualität der Bondierfähigkeit der Alumi
niumelektrodenschicht zu prüfen und auszuwerten und
die gewünschte Qualität, d. h. die gewünschten Eigen
schaften, aufrecht zu erhalten.
Für eine genaue Bewertung der Bondierfähigkeit
müssen verschiedene Prüfungen oder Tests durchgeführt
werden, einschließlich eines Tests bezüglich der
Bondierkontaktfestigkeit und einer Untersuchung, mit
der festgestellt wird, wie die Legierungsschicht aus
gebildet ist und wie die Aluminiumschicht deformiert
und ausgetrieben oder weggedrückt wird. Diese Unter
suchung kann erfolgen, indem der Querschnitt des
bondierten Bereichs betrachtet wird. Die Bondier
kontaktfestigkeit kann mittels eines Schlag- oder
Stoßtests (push test) zur Messung der Scherfestigkeit
des bondierten Bereichs gemessen werden. 0,392 N
(40 gf=gram force) oder auch eine größere Kraft
entspricht einem in typischer Weise erforderlichen
Schwellwert der Bruchbelastung. Zur Prüfung der Elek
trode zum Zweck einer Qualitätskontrolle während
der Massenproduktion ist jedoch ein einfacheres
Testverfahren wünschenswert.
Ein bekanntes Verfahren zur Qualitätsprüfung
von Aluminium im Hinblick auf die Bondierfähigkeit
besteht in der Messung der Härte (Knoop-Härte).
Jedoch wird diese Messung für eine von der tatsäch
lichen Bondierung verschiedene Situation durchge
führt. Darüber hinaus ist der Meßfehler für eine
sehr geringe Last beträchtlich. Die sehr geringe
oder leichte Last muß verwendet werden, da die Last
bei der Bondierung sehr gering ist, und die Messung
differiert in Abhängigkeit von der Größe der Last.
Der vorliegenden Erfindung liegt die Aufgabe
zugrunde, ein Verfahren zur Qualitätsprüfung anzu
geben, welches einen geringeren Fehler aufweist.
Die Erfinder fanden heraus, daß, wenn eine Kugel
aus einem dem Material des Kontaktdrahtes identischen
oder ähnlichen Material unter Verwendung einer Bon
dierkapillare gegen eine Elektrode gepreßt wird, die
Tiefe der resultierenden Einbeulung der Elektrode
eine gute Korrelation, d. h. eine korrelierte Bezie
hung, zur Bondierfähigkeit aufweist.
Es wird infolgedessen davon ausgegangen, daß,
wenn man die Tiefe einer infolge des Anpressens
einer Kupferkugel unter Benutzung einer Bondierkapil
lare entstehenden Einbeulung der Elektrode mißt, die
Bondierfähigkeit der Elektrode genau geprüft ist.
Entsprechend der Erfindung wird ein Verfahren
zur Qualitätsprüfung einer Elektrodenschicht eines
Halbleiterbauelementes, auf welches ein Kontaktdraht
bondiert werden soll, angegeben, welches Verfahren
als Verfahrensschritte aufweist: Anpressen einer Kugel
aus einem dem Material des Kontaktdrahtes identischen
oder ähnlichen Material unter Verwendung einer Bon
dierkapillare gegen die Elektrodenschicht und Messen
der Tiefe einer infolge dieses Anpressens entstehen
den Einbeulung der Elektrodenschicht.
Im folgenden wird die Erfindung an Hand der
Zeichnungen näher erläutert. Es zeigen:
Fig. 1 in schematischer Weise, wie die Draht
bondierung durchgeführt wird,
Fig. 2 die Deformation einer Elektrodenschicht,
Fig. 3 wie eine Kugel während eines Verfah
rensschritts der Qualitätsprüfung gemäß der Erfindung
gegen eine Elektrodenschicht gepreßt wird,
Fig. 4 einen Querschnittsteil der Elektroden
schicht, die in diesem Teil eingebeult ist,
Fig. 5 einen Bereich für zufriedenstellende
Bedingungen in Abhängigkeit von Last und Tiefe der
Einbeulung und
Fig. 6 einen Bereich für zufriedenstellende
Bedingungen in Abhängigkeit der Amplitude der Ultra
schallschwingung und der Tiefe der Einbeulung.
In Fig. 3 ist ein Ausführungsbeispiel der Er
findung dargestellt. Den in den Fig. 1 und 2 verwen
deten Bezugszahlen identische Bezugszahlen dieser
Fig. 3 bezeichnen identische oder ähnliche Teile.
Entsprechend diesem Ausführungsbeispiel wird eine
Kugel 14 aus einem dem Material des Drahtes identischen
oder ähnlichen Material unter Benutzung einer Kapillare
5 gegen eine dünne Elektrodenschicht 3 gepreßt, die
sich auf einem Halbleiterchip 2 (Fig. 3) befindet. Das
Ausmaß der resultierenden Deformation, d. h. die Tiefe D
der resultierenden Einbeulung oder Einbuchtung (Fig. 4)
wird gemessen.
Die Tiefe dieser Einbeulung kann gemessen werden,
indem mit Hilfe eines Mikroskops der in Fig. 4 darge
stellte Querschnitt, der durch Schleifen des Bereichs B
der zu bondierenden Elektrode hergestellt wird, unter
sucht wird. Die mit dem Mikroskop beobachtete Höhen
differenz zwischen dem Bondierungsbereich B und den
ihn umgebenden Bereichen S, d. h. den Bereichen, die
nicht zu kontaktieren sind, entspricht der Tiefe D
der Einbeulung.
Die Bondierfähigkeit der Schicht wird aus dieser
Tiefe D bewertet und geprüft.
In einem Beispiel wurde ermittelt, daß bei Anpres
sen einer reinen Kupferkugel 14 eines Durchmessers von
70 bis 75 µm mit einer Kraft von 1,96 bis 2,94 N
(200 bis 300 gf) an eine Elektrode 3 und bei einer
resultierenden Tiefe der Einbeulung innerhalb eines
Bereichs von 0,1 bis 0,6 µm der Kupferdraht 10 gut
an die Elektrode 3 bondiert werden kann. Dies ist in
Fig. 5 dargestellt, in welcher der schraffierte Bereich
den Bereich für solche Bedingungen anzeigt, für die
eine gute Bondierfähigkeit und Kontaktierung erzielt
wird. Liegt entsprechend dieser Darstellung die ge
messene Tiefe der Einbeulung innerhalb des Bereichs
von 0,1 bis 0,6 µm, so wird angenommen, daß die
Bondierfähigkeit der Schicht gut ist. Befindet sich
die gemessene Tiefe außerhalb dieses Bereichs, so
wird die Bondierfähigkeit nicht mehr als gut ange
sehen.
Wird die Bondierfähigkeit nicht für gut befun
den, so kann eine Maßnahme zur Änderung der Eigenschaft
oder der Qualität der Aluminiumschicht der Halbleiter
bauelemente, die in Massenproduktion hergestellt wer
den, getroffen werden, so daß die nächstfolgend pro
duzierten Halbleiterbauelemente eine Aluminiumschicht
mit einer guten Bondierfähigkeit aufweisen. Die Eigen
schaften und die Qualität der Aluminiumschicht kann
durch die Bedingungen, unter denen das Aluminium ange
lagert wird, d. h. beispielsweise die Anlagerungs- oder
Abscheidungsrate und die Feinheit oder das Ausmaß des
eingestellten Vakuums verändert werden. Wird beispiels
weise die Anlagerungsrate vermindert, so wird die Alu
miniumschicht härter und kann infolgedessen nur mehr
schwerer deformiert werden.
Eine andere Maßnahme, die alternativ oder auch
zusätzlich zu der oben erwähnten Maßnahme getroffen
werden kann, besteht in der Änderung der Bedingungen
eines nach der Bondierung durchgeführten Prozesses.
Beispielsweise können die Bedingungen für ein Sintern
der Bondiergrenzflächen so verändert werden, daß eine
Abweichung von der gewünschten Bondierfähigkeit kom
pensiert und auf diese Weise die Beschaffenheit der
bondierten Bereiche optimiert wird.
In einem weiteren Ausführungsbeispiel der vor
liegenden Erfindung werden der Kupferkugel, während
sie gegen die Elektrode gedrückt oder gepreßt wird,
Ultraschallwellen oder -schwingungen zugeführt. In
diesem Fall kann die Druckkraft vermindert werden.
Beispielsweise ist ermittelt worden, daß, wenn eine
reine Kupferkugel eines Durchmessers von 70 bis 75 µm
mit einer Druckkraft von ungefähr 1,47 N (150 gf)
gegen eine Elektrode gepreßt wird, während eine
Ultraschallschwingung von 60 kHz mit einer Amplitude
von 0,07 bis 0,14 µm bei einer Temperatur von 350°C
angewandt wird, und wenn die Tiefe der resultierenden
Einbeulung innerhalb eines Bereiches von 0,1 bis 0,6 µm
liegt, der Kupferdraht 10 gut an die Elektrode 3
bondiert werden kann. Dies ist in Fig. 6 dargestellt,
in der der schraffierte Bereich den Bereich für Be
dingungen darstellt, bei denen die gute Kontaktier
fähigkeit erzielt wird. Liegt entsprechend dieser
Darstellung die gemessene Tiefe in der Einbeulung im
Bereich von 0,1 bis 0,6 µm, so wird davon ausgegangen,
daß die Bondierfähigkeit gut ist. Liegt jedoch die
gemessene Tiefe außerhalb dieses Bereichs, so wird
die Bondierfähigkeit oder Kontaktfähigkeit als nicht
gut angesehen.
Im letzteren Fall einer nicht für gut befundenen
Bondierfähigkeit können eine oder mehrere den in Ver
bindung mit dem ersten Ausführungsbeispiel beschrie
benen Maßnahmen ähnliche Maßnahmen ergriffen werden.
Wie aus der Beschreibung hervorgeht, wird im
erfindungsgemäßen Verfahren die Messung unter einer
Bedingung durchgeführt, die der Bedingung, bei der
die tatsächliche Bondierung erfolgt, ähnlich ist.
Infolgedessen ist die Bewertung oder Qualitätsprü
fung genau und zuverlässig.
Claims (8)
1. Verfahren zur Qualitätsprüfung einer Elektroden
schicht eines Halbleiterbauelements, auf welches ein
Kontaktdraht bondiert werden soll,
gekennzeichnet durch
die folgenden Verfahrensschritte:
Anpressen einer Kugel aus einem dem Material des Kontaktdrahtes identischen oder ähnlichen Material unter Verwendung einer Bondierkapillare gegen die Elektrodenschicht und
Messen der Tiefe einer infolge dieses Anpressens entstehenden Einbeulung der Elektrodenschicht.
Anpressen einer Kugel aus einem dem Material des Kontaktdrahtes identischen oder ähnlichen Material unter Verwendung einer Bondierkapillare gegen die Elektrodenschicht und
Messen der Tiefe einer infolge dieses Anpressens entstehenden Einbeulung der Elektrodenschicht.
2. Verfahren nach Anspruch 1,
dadurch gekennzeichnet,
daß der Kugel, während sie gegen die Elektrodenschicht
gepreßt wird, eine Ultraschallschwingung zugeführt
wird.
3. Verfahren nach Anspruch 1,
dadurch gekennzeichnet,
daß die Elektrodenschicht aus Aluminium gebildet ist.
4. Verfahren nach Anspruch 1,
dadurch gekennzeichnet,
daß der Kontaktdraht aus Kupfer oder Kupferlegierung
hergestellt ist.
5. Verfahren nach Anspruch 1,
dadurch gekennzeichnet,
daß die Elektrodenschicht aus Aluminium, der Kontakt
draht aus Kupfer oder Kupferlegierung und die Kugel
aus Kupfer gebildet sind, wobei diese Kugel einen
Durchmesser von ungefähr 70 bis 75 µm aufweist und
mit einer Kraft von 1,96 bis 2,94 N (200 bis 300 gf)
angepreßt wird.
6. Verfahren nach Anspruch 5,
dadurch gekennzeichnet,
daß diese Messung so durchgeführt wird, daß festgestellt
wird, ob die Tiefe der Einbeulung innerhalb eines Be
reichs von 0,1 bis 0,6 µm liegt oder nicht.
7. Verfahren nach Anspruch 5,
dadurch gekennzeichnet,
daß eine Ultraschallschwingung von ungefähr 60 kHz mit
einer Amplitude von 0,07 bis 0,14 µm angewandt wird.
8. Verfahren nach Anspruch 7,
dadurch gekennzeichnet,
daß diese Messung so durchgeführt wird, daß festgestellt
wird, ob die Tiefe der Einbeulung innerhalb eines Be
reichs von 0,1 bis 0,6 µm liegt oder nicht.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60291084A JPS62150730A (ja) | 1985-12-24 | 1985-12-24 | 半導体装置の評価方法 |
JP61017348A JPS62174936A (ja) | 1986-01-28 | 1986-01-28 | 半導体装置の評価方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3641688A1 true DE3641688A1 (de) | 1987-07-02 |
DE3641688C2 DE3641688C2 (de) | 1989-10-12 |
Family
ID=26353848
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19863641688 Granted DE3641688A1 (de) | 1985-12-24 | 1986-12-06 | Verfahren zur qualitaetspruefung einer elektrodenschicht eines halbleiterbauelements |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE3641688A1 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102013222439B4 (de) | 2013-11-05 | 2023-10-12 | F&S Bondtec Semiconductor GmbH | Messung der Nachgiebigkeit |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102007030951B4 (de) * | 2007-07-04 | 2011-05-12 | Fachhochschule Augsburg | Vorrichtung für die Bestimmung von mechanischen Eigenschaften eines zu untersuchenden Objekts |
-
1986
- 1986-12-06 DE DE19863641688 patent/DE3641688A1/de active Granted
Non-Patent Citations (1)
Title |
---|
Copper Wire Bonding, John Kurtz a. all. Fairchaild Semiconductor Corp. South Portland, Maine * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102013222439B4 (de) | 2013-11-05 | 2023-10-12 | F&S Bondtec Semiconductor GmbH | Messung der Nachgiebigkeit |
Also Published As
Publication number | Publication date |
---|---|
DE3641688C2 (de) | 1989-10-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69930433T2 (de) | Verfahren und Vorrichtung zur "Flip-Chip" Montage eines elektronischen Bauteils | |
DE69418842T2 (de) | Apparat zur Messung der Oxidladung auf Halbleiterscheiben und Methode zur Herstellung einer Sonde für den vorerwähnten Apparat | |
EP1440322B1 (de) | Mikrosensor | |
EP0275877A2 (de) | Überwachung von Bondparametern während des Bondvorganges | |
DE2938240C2 (de) | Verfahren zum Herstellen einer druckempfindlichen Einrichtung | |
DE3703694A1 (de) | Ball-bondverfahren und vorrichtung zur durchfuehrung derselben | |
DE3233629A1 (de) | Verfahren und einrichtung zur herstellung von verbindungen mittels ultraschall | |
DE19717368A1 (de) | Drahtbondverfahren, Drahtbondvorrichtung und mit denselben hergestellte Halbleitereinrichtung | |
DE19709912B4 (de) | Ultraschallbondvorrichtung | |
DE19924239A1 (de) | Kontaktstelle und Verfahren zur Herstellung einer Kontaktstelle | |
EP1310319A1 (de) | Prüfverfahren für Bondverbindungen und Drahtbonder | |
DE3641688C2 (de) | ||
DE3780630T2 (de) | Verbindung von elektronischen bauteilen untereinander. | |
EP1255972B1 (de) | Temperaturmessfühler und verfahren zur kontaktierung eines temperaturmessfühlers | |
EP0279216A1 (de) | Gerät zur Messung von Bondparametern | |
EP2133915A1 (de) | Halbleiteranordnung mit besonders gestalteten Bondleitungen und Verfahren zum Herstellen einer solchen Anordnung | |
DE4131565C2 (de) | Verfahren zur Optimierung des Schweißprozesses bei Bondverfahren | |
DE3704200C2 (de) | ||
DE10315639A1 (de) | Verfahren und Vorrichtung zur Prüfung einer Drahtbondverbindung | |
Aguila et al. | Ball bond characterization: An intensive analysis on ball size and shear test results and applicability to existing standards | |
DE4435579C2 (de) | Vorrichtung zur Prüfung der Klebehaftung eines Trägerelements mit IC-Bausteinen in einer Chipkarte | |
DE102004028397B4 (de) | Verfahren für die Überprüfung der Qualität einer Wedgeverbindung | |
DE19710960A1 (de) | Befestigungsschraube mit der Möglichkeit zur Ermittlung der Klemmkraft der Schraubverbindung im verschraubten Zustand | |
DE4021031C2 (de) | Verfahren zur Herstellung eines Halbleiterbauelementes | |
DE19928547B4 (de) | Verfahren zur Herstellung eines Drucksensors |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
OP8 | Request for examination as to paragraph 44 patent law | ||
D2 | Grant after examination | ||
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |