CN220873589U - Perovskite laminated solar cell structure - Google Patents
Perovskite laminated solar cell structure Download PDFInfo
- Publication number
- CN220873589U CN220873589U CN202321068502.9U CN202321068502U CN220873589U CN 220873589 U CN220873589 U CN 220873589U CN 202321068502 U CN202321068502 U CN 202321068502U CN 220873589 U CN220873589 U CN 220873589U
- Authority
- CN
- China
- Prior art keywords
- layer
- perovskite
- transport layer
- solar cell
- transmission
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000463 material Substances 0.000 claims abstract description 91
- 230000005540 biological transmission Effects 0.000 claims abstract description 78
- 238000010521 absorption reaction Methods 0.000 claims abstract description 46
- 239000002131 composite material Substances 0.000 claims abstract description 28
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 11
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 11
- 239000006096 absorbing agent Substances 0.000 claims description 45
- 230000005525 hole transport Effects 0.000 claims description 39
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 23
- 229910052736 halogen Inorganic materials 0.000 claims description 15
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 12
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 12
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 11
- 229910001887 tin oxide Inorganic materials 0.000 claims description 10
- 239000000126 substance Substances 0.000 claims description 9
- 150000001768 cations Chemical class 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 7
- 150000001767 cationic compounds Chemical class 0.000 claims description 5
- 229910001411 inorganic cation Inorganic materials 0.000 claims description 5
- 125000005843 halogen group Chemical group 0.000 claims 2
- 229910010272 inorganic material Inorganic materials 0.000 abstract description 6
- 239000011147 inorganic material Substances 0.000 abstract description 6
- 150000002367 halogens Chemical class 0.000 description 13
- 238000000034 method Methods 0.000 description 12
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 8
- 239000011368 organic material Substances 0.000 description 8
- -1 oxygen ion Chemical class 0.000 description 6
- 239000002243 precursor Substances 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 238000000231 atomic layer deposition Methods 0.000 description 5
- 238000005191 phase separation Methods 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- WHXTVQNIFGXMSB-UHFFFAOYSA-N n-methyl-n-[tris(dimethylamino)stannyl]methanamine Chemical compound CN(C)[Sn](N(C)C)(N(C)C)N(C)C WHXTVQNIFGXMSB-UHFFFAOYSA-N 0.000 description 4
- 238000010926 purge Methods 0.000 description 4
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical class C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 229910003472 fullerene Inorganic materials 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- PNKUSGQVOMIXLU-UHFFFAOYSA-N Formamidine Chemical compound NC=N PNKUSGQVOMIXLU-UHFFFAOYSA-N 0.000 description 2
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 2
- JKSIBASBWOCEBD-UHFFFAOYSA-N N,N-bis(4-methoxyphenyl)-9,9'-spirobi[fluorene]-1-amine Chemical compound COc1ccc(cc1)N(c1ccc(OC)cc1)c1cccc2-c3ccccc3C3(c4ccccc4-c4ccccc34)c12 JKSIBASBWOCEBD-UHFFFAOYSA-N 0.000 description 2
- 229910008449 SnF 2 Inorganic materials 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 2
- 150000001450 anions Chemical class 0.000 description 2
- LYQFWZFBNBDLEO-UHFFFAOYSA-M caesium bromide Chemical compound [Br-].[Cs+] LYQFWZFBNBDLEO-UHFFFAOYSA-M 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- OMZSGWSJDCOLKM-UHFFFAOYSA-N copper(II) sulfide Chemical compound [S-2].[Cu+2] OMZSGWSJDCOLKM-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 229910052740 iodine Inorganic materials 0.000 description 2
- 239000011630 iodine Substances 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000002159 nanocrystal Substances 0.000 description 2
- 150000002892 organic cations Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 229910001868 water Inorganic materials 0.000 description 2
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N Oxozirconium Chemical compound [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- 229920001167 Poly(triaryl amine) Polymers 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- XXLJGBGJDROPKW-UHFFFAOYSA-N antimony;oxotin Chemical compound [Sb].[Sn]=O XXLJGBGJDROPKW-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- AQKDYYAZGHBAPR-UHFFFAOYSA-M copper;copper(1+);sulfanide Chemical compound [SH-].[Cu].[Cu+] AQKDYYAZGHBAPR-UHFFFAOYSA-M 0.000 description 1
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Natural products CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 1
- ZASWJUOMEGBQCQ-UHFFFAOYSA-L dibromolead Chemical compound Br[Pb]Br ZASWJUOMEGBQCQ-UHFFFAOYSA-L 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- PDJAZCSYYQODQF-UHFFFAOYSA-N iodine monofluoride Chemical compound IF PDJAZCSYYQODQF-UHFFFAOYSA-N 0.000 description 1
- RVPVRDXYQKGNMQ-UHFFFAOYSA-N lead(2+) Chemical compound [Pb+2] RVPVRDXYQKGNMQ-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052976 metal sulfide Inorganic materials 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000000075 oxide glass Substances 0.000 description 1
- 229910001419 rubidium ion Inorganic materials 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- PWYYWQHXAPXYMF-UHFFFAOYSA-N strontium(2+) Chemical compound [Sr+2] PWYYWQHXAPXYMF-UHFFFAOYSA-N 0.000 description 1
- 229910001432 tin ion Inorganic materials 0.000 description 1
- JTDNNCYXCFHBGG-UHFFFAOYSA-L tin(ii) iodide Chemical compound I[Sn]I JTDNNCYXCFHBGG-UHFFFAOYSA-L 0.000 description 1
- YUOWTJMRMWQJDA-UHFFFAOYSA-J tin(iv) fluoride Chemical compound [F-].[F-].[F-].[F-].[Sn+4] YUOWTJMRMWQJDA-UHFFFAOYSA-J 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium(II) oxide Chemical compound [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten trioxide Chemical compound O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The utility model provides a perovskite laminated solar cell structure. The structure comprises: the perovskite bottom cell comprises a first electrode layer, a first transmission layer, a first perovskite absorption layer and a second transmission layer which are arranged in a stacked manner; the composite layer is arranged on one side of the second transmission layer far away from the first perovskite absorption layer; the perovskite top battery comprises a third transmission layer, a second perovskite absorption layer, a fourth transmission layer and a second electrode layer which are arranged in a stacked mode, wherein the third transmission layer is arranged on one side, far away from the second transmission layer, of the composite layer, the first transmission layer, the second transmission layer, the third transmission layer and the fourth transmission layer are inorganic metal oxides, and the first perovskite absorption layer is made of all-inorganic perovskite materials. In the above structure, the materials forming the transport layer and the first perovskite absorption layer are both inorganic materials, so that the perovskite stacked solar cell structure can have excellent stability.
Description
Technical Field
The utility model relates to the technical field of perovskite batteries, in particular to a perovskite laminated solar cell structure.
Background
Serial perovskite solar cells or modules are favored by researchers because of their higher efficiency. The perovskite laminated battery is used as one of the perovskite solar batteries in series, and the band gaps of the two laminated sub-batteries can be freely adjusted, so that the solar spectrum light efficiency utilization can be realized to the greatest extent, the energy loss is reduced, and the efficiency limit of a single battery is broken through.
The energy level matching degree of the light absorbing materials of the two sub-cells connected in series with the perovskite laminated cell is important for the expansion of the spectrum absorption range, so that the existing perovskite laminated cell adopts a mixed perovskite material for matching the energy level and the current of the top cell and the bottom electrode, and the adjustment and mutual adaptation of the band gap are realized by adjusting the proportion of anions and cations in the perovskite component in the mixed perovskite material. However, the existing process in the mode is relatively complex, and the condition of phase separation of halogen often occurs, so that the stability is relatively poor, and the industrialized development of perovskite is greatly inhibited.
Disclosure of utility model
The utility model mainly aims to provide a perovskite laminated solar cell structure so as to solve the problem of poor stability of the perovskite laminated solar cell structure in the prior art.
In order to achieve the above object, according to one aspect of the present utility model, there is provided a perovskite stacked solar cell structure including: the perovskite bottom cell comprises a first electrode layer, a first transmission layer, a first perovskite absorption layer and a second transmission layer which are arranged in a stacked manner; the composite layer is arranged on one side of the second transmission layer far away from the first perovskite absorption layer; the perovskite top battery comprises a third transmission layer, a second perovskite absorption layer, a fourth transmission layer and a second electrode layer which are arranged in a stacked mode, wherein the third transmission layer is arranged on one side, far away from the second transmission layer, of the composite layer, the first transmission layer, the second transmission layer, the third transmission layer and the fourth transmission layer are inorganic metal oxides, and the first perovskite absorption layer is made of all-inorganic perovskite materials.
Further, the first perovskite absorber layer is a wide bandgap perovskite absorber layer and the second perovskite absorber layer is a narrow bandgap perovskite absorber layer.
Further, the first material forming the first perovskite absorber layer and the second material forming the second perovskite absorber layer are expressed by the chemical formula ABX 3, wherein a is an inorganic cation, B is a divalent metal cation, and X is a halogen element, the first material being the same as or different from the second material.
Further, the second perovskite absorption layer is doped with the same metal element as the divalent metal oxygen ion. Further, the doping content of the metal element in the second perovskite absorption layer is 5mg/mL.
Further, the first transport layer comprises a first electron transport layer, the second transport layer comprises a first hole transport layer, the third transport layer comprises a second electron transport layer, and the fourth transport layer comprises a second hole transport layer; or the first transport layer comprises a first hole transport layer, the second transport layer comprises a first electron transport layer, the third transport layer comprises a second hole transport layer, and the fourth transport layer comprises a second electron transport layer.
Further, the material in the first electron transport layer and the second electron transport layer includes tin oxide.
Further, the material of the first hole transport layer and the second hole transport layer includes nickel oxide.
Further, the materials of the first electrode layer, the second electrode layer, and the composite layer formed independently include any one of a metal or a transparent conductive material. Further, the material of the first perovskite absorber layer comprises CsPbBr 3 and the material of the second perovskite absorber layer comprises FASnI 3.
By means of the technical scheme, the perovskite laminated solar cell structure is provided, the perovskite bottom cell is arranged on one side of the composite layer, the perovskite top cell is arranged on the other side of the composite layer, and the perovskite bottom cell and the perovskite top cell are connected in series to form the perovskite laminated solar cell, wherein materials of a first transmission layer and a second transmission layer in the perovskite bottom cell, materials of a third transmission layer and a fourth transmission layer in the perovskite top cell are all metal oxides, and materials of a first perovskite absorption layer in the perovskite bottom cell are all inorganic perovskite materials. Compared with the prior art, as the material forming the transmission layer is an inorganic material and is better than the stability of an organic material, the stability of the all-inorganic perovskite material is better than that of the organic perovskite material, so that the perovskite laminated solar cell structure with the first transmission layer, the second transmission layer, the third transmission layer, the fourth transmission layer and the first perovskite absorption layer can have excellent stability.
Drawings
The accompanying drawings, which are included to provide a further understanding of the utility model and are incorporated in and constitute a part of this specification, illustrate embodiments of the utility model and together with the description serve to explain the utility model. In the drawings:
Fig. 1 shows a schematic cross-sectional structure of a perovskite stacked solar cell structure according to an embodiment of the utility model.
Wherein the above figures include the following reference numerals:
10. A first electrode layer; 20. a first transport layer; 30. a first perovskite absorber layer; 40. a second transport layer; 50. a composite layer; 60. a third transmission layer; 70. a second perovskite absorber layer; 80. a fourth transmission layer; 90. and a second electrode layer.
Detailed Description
It should be noted that, without conflict, the embodiments of the present utility model and features of the embodiments may be combined with each other. The utility model will be described in detail below with reference to the drawings in connection with embodiments.
In order that those skilled in the art will better understand the present utility model, a technical solution in the embodiments of the present utility model will be clearly and completely described below with reference to the accompanying drawings in which it is apparent that the described embodiments are only some embodiments of the present utility model, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present utility model without making any inventive effort, shall fall within the scope of the present utility model.
It should be noted that the terms "first," "second," and the like in the description and the claims of the present utility model and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate in order to describe the embodiments of the utility model herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
As mentioned in the background art, as one of the perovskite laminated cells is a serial perovskite solar cell, the band gaps of the two laminated sub-cells can be freely adjusted, so that the solar spectrum light efficiency utilization can be realized to the greatest extent, the energy loss is reduced, and the efficiency limit of a single cell is broken through. In order to achieve the matching of energy levels and currents of the perovskite top battery and the perovskite bottom battery, the perovskite laminated battery in the prior art adopts a mixed perovskite material, so that the adjustment and mutual adaptation of band gaps are achieved by adjusting the proportion of anions and cations in the perovskite component in the mixed perovskite material. However, the existing process in the mode is relatively complex, and the condition of phase separation of halogen often occurs, so that the stability is relatively poor, and the industrialized development of perovskite is greatly inhibited. In order to solve the technical problems, the application provides a perovskite laminated solar cell structure.
Specifically, the mixed perovskite material can show an unstable state under the action of an optical field or an electric field, an iodine-rich and bromine-rich region is easy to form, and a halogen phase separation condition occurs, so that the open-circuit voltage of the perovskite laminated solar cell is lower, the emission wavelength of the light-emitting diode is pinned in an iodine-rich characteristic region, namely an infrared region, so that the perovskite solar cell loses adjustability, the stability of the perovskite laminated solar cell is relatively poor, and the industrialized development of perovskite is greatly inhibited.
To solve the above technical problem, in some alternative embodiments, there is provided a perovskite stacked solar cell structure, as shown in fig. 1, including: a perovskite-based cell including a first electrode layer 10, a first transport layer 20, a first perovskite absorption layer 30, and a second transport layer 40, which are stacked; a composite layer 50, the composite layer 50 being disposed on a side of the second transport layer 40 remote from the first perovskite absorption layer 30; the perovskite top cell comprises a third transmission layer 60, a second perovskite absorption layer 70, a fourth transmission layer 80 and a second electrode layer 90 which are stacked, wherein the third transmission layer 60 is arranged on one side of the composite layer 50 far away from the second transmission layer 40, the first transmission layer 20, the second transmission layer 40, the third transmission layer 60 and the fourth transmission layer 80 are inorganic metal oxides, and the first perovskite absorption layer 30 is made of all-inorganic perovskite materials.
In the above embodiment, by disposing the perovskite bottom cell on one side of the composite layer 50 and the perovskite top cell on the other side of the composite layer 50, the perovskite bottom cell and the perovskite top cell are connected in series to form the perovskite stacked solar cell, wherein the materials of the first transmission layer 20 and the second transmission layer 40 in the perovskite bottom cell, and the materials of the third transmission layer 60 and the fourth transmission layer 80 in the perovskite top cell are all metal oxides, and the material of the first perovskite absorption layer 30 in the perovskite bottom cell is all inorganic perovskite material. Compared with the prior art, since the material forming the transmission layer is an inorganic material, the stability of the material is superior to that of an organic material, and the stability of the all-inorganic perovskite material is also superior to that of the organic perovskite material, so that the perovskite laminated solar cell structure having the first transmission layer 20, the second transmission layer 40, the third transmission layer 60, the fourth transmission layer 80 and the first perovskite absorption layer 30 can have excellent stability.
Specifically, the perovskite stacked solar cell in the prior art has poor stability, so that the perovskite stacked solar cell cannot absorb sunlight with a wider spectral range in the process of absorbing sunlight, and the conversion efficiency of the perovskite stacked solar cell is low. To address the above-described technical issues, in some alternative embodiments, the first perovskite absorber layer 30 is a wide bandgap perovskite absorber layer and the second perovskite absorber layer 70 is a narrow bandgap perovskite absorber layer.
In the above embodiment, the first perovskite absorber layer 30 can be used as a wide band gap perovskite absorber layer to absorb solar light of a shorter wavelength, and the second perovskite absorber layer 70 can be used as a narrow band gap perovskite absorber layer to absorb solar light of a longer wavelength.
In an exemplary embodiment, in case the perovskite stacked solar cell structure is used to absorb solar light having a wavelength ranging from 350 to 900nm, the first perovskite absorption layer 30 may absorb solar light having a wavelength ranging from 300 to 500nm, and the second perovskite absorption layer 70 may absorb solar light having a wavelength ranging from 500 to 1100 nm.
In another exemplary embodiment, the first perovskite absorbing layer 30 may absorb sunlight having a wavelength ranging from 300 to 650nm, and the second perovskite absorbing layer 70 may absorb sunlight having a wavelength ranging from 550 to 900nm, that is, by providing a narrow-bandgap perovskite absorbing layer in the perovskite top cell and a wide-bandgap perovskite absorbing layer in the perovskite bottom cell, the spectrum range absorbed by the perovskite stacked solar cell structure having the perovskite top cell and the perovskite bottom cell can be made wider, thereby achieving the purpose of improving the photoelectric conversion efficiency of the perovskite stacked solar cell.
In some alternative embodiments, the first material forming the first perovskite absorber layer 30 and the second material forming the second perovskite absorber layer 70 are expressed by the chemical formula ABX 3, wherein a is an inorganic cation, B is a divalent metal cation, and X is a halogen element, the first material being the same as or different from the second material.
In order to avoid the situation that the first material forming the first perovskite absorbing layer 30 and the second material forming the second perovskite absorbing layer 70 are separated by halogen, in the above embodiment, only one halogen element is used in the first material, and correspondingly, only one halogen element is used in the second material, so that after the first material is used for forming the first perovskite absorbing layer 30, since only one halogen element is provided in the first perovskite absorbing layer 30, the phenomenon of phase separation of the halogen element does not occur even under the action of an optical field or an electric field, and thus the perovskite stacked solar cell is not lost, and after the second material is used for forming the second perovskite absorbing layer 70, since only one halogen element is provided in the second perovskite absorbing layer 70, the phenomenon of phase separation of the halogen element does not occur under the action of the optical field or the electric field, and thus the perovskite stacked solar cell is not lost, and the stability of the perovskite stacked solar cell can be greatly improved.
Alternatively, a in the above formula ABX 3 may be cesium ions (Cs +), rubidium ions (Rb +); b in the above chemical formula ABX 3 may be tin ion (Sn 2+), lead ion (Pb 2+); c in the chemical formula ABX 3 can be chloride (Cl -), bromide (Br -) or iodide (I -). Illustratively, the chemical formulas of the first perovskite absorber layer 30 and the second perovskite absorber layer 70 described above may be any one of CsSnBr3、CsSnCl3、CsSnI3、CsPbBr3、CsPbCl3、CsPbI3、RbSnBr3、RbSnCl3、RbSnI3、RbPbBr3、RbPbCl3、RbPbI3. Those skilled in the art may reasonably select according to actual needs, and the embodiment is not particularly limited.
In other alternative embodiments, a in the chemical formula ABX 3 of the second perovskite absorption layer 70 may be an organic cation, for example, the organic cation may be formamidine ((NH 2)2CH+), methylamine (CH 3NH3 +)), and then the chemical formula of the second perovskite absorption layer 70 may be any one of ((NH2)2CH)SnBr3、((NH2)2CH)SnCl3、((NH2)2CH)SnI3、((NH2)2CH)PbBr3、((NH2)2CH)PbCl3、((NH2)2CH)PbI3、(CH3NH3)SnBr3、(CH3NH3)SnCl3、(CH3NH3)SnI3、(CH3NH3)PbBr3、(CH3NH3)PbCl3、(CH3NH3)PbI3.
In order to provide the formed second perovskite absorber layer 70 with a relatively strong oxidation resistance, in some alternative embodiments, the second perovskite absorber layer 70 is doped with the same metal element as the divalent metal oxygen ion. Alternatively, the doping content of the above-mentioned metal element in the second perovskite absorption layer 70 is 5mg/mL, that is, in the solution in which the second perovskite absorption layer 70 is formed, in the case where the content of the solution is 1mL, the content of the metal element in the above-mentioned solution is 5mg.
In some alternative embodiments, the first transport layer 20 comprises a first electron transport layer, the second transport layer 40 comprises a first hole transport layer, the third transport layer 60 comprises a second electron transport layer, and the fourth transport layer 80 comprises a second hole transport layer; or the first transport layer 20 comprises a first hole transport layer, the second transport layer 40 comprises a first electron transport layer, the third transport layer 60 comprises a second hole transport layer, and the fourth transport layer 80 comprises a second electron transport layer.
Since the perovskite cell may include a perovskite cell having a regular structure and a perovskite cell having a trans structure, the perovskite stacked solar cell structure including the perovskite bottom cell and the perovskite top cell may be formed by stacking two single perovskite cells having a regular structure or may be formed by stacking two single perovskite cells having a trans structure.
In an exemplary embodiment, in the case where the first transport layer 20 is a first electron transport layer and the second transport layer 40 is a first hole transport layer, correspondingly, the third transport layer 60 located in the perovskite top cell is a second electron transport layer, and the fourth transport layer 80 is a second hole transport layer, where the perovskite bottom cell and the perovskite top cell in the perovskite stacked solar cell structure are both in a formal structure;
In another exemplary embodiment, in the case where the first transport layer 20 is a first hole transport layer and the second transport layer 40 is a first electron transport layer, correspondingly, the third transport layer 60 in the perovskite top cell is a second hole transport layer, and the fourth transport layer 80 is a second electron transport layer, where the perovskite bottom cell and the perovskite top cell in the perovskite stacked solar cell structure are both in a trans structure.
Optionally, the fourth transmission layer 80 also has a function of protecting the second electrode layer 90. In particular, the fourth transmission layer 80 prevents the halogen molecules in the absorption layer from diffusing to the electrode surface to undergo chemical reaction, thereby avoiding adverse effects on the stability and conversion efficiency of the perovskite stacked solar cell.
In some alternative embodiments, the material of the first electron transport layer and the second electron transport layer comprises tin oxide.
Specifically, in the case where the perovskite stacked solar cell structure having the first electron transport layer and the second electron transport layer is a formal structure, the materials of the first electron transport layer and the second electron transport layer in the related art may be C 60, and in the case where the perovskite stacked solar cell structure having the first electron transport layer and the second electron transport layer is a trans structure, the materials of the first electron transport layer and the second electron transport layer in the related art may be fullerenes, wherein both the C 60 and the fullerenes are organic materials, and the cost of producing the perovskite stacked solar cell is high due to the high material price of the C 60 and the fullerenes, which is unfavorable for the industrialized development of the perovskite stacked solar cell. Therefore, in this embodiment, a metal oxide with low material cost is used as the source material of the first electron transport layer and the second electron transport layer, thereby reducing the material cost. Optionally, the thickness of the first electron transport layer and the second electron transport layer is 20-50 nm.
The metal oxide may include titanium oxide (TiO), strontium titanium oxide (SrTiO 3), zinc oxide (ZnO), tin oxide (SnO), and zirconium oxide (ZrO). Specifically, the tin dioxide is used as a source material of the first electron transport layer and the second electron transport layer, so that the electron mobility of the first electron transport layer and the second electron transport layer can be improved, the reflectivity of sunlight can be reduced, the transmittance of sunlight can be increased, and the preparation temperature can be reduced. Further, the first electron transport layer and the second electron transport layer in this embodiment are formed of an inorganic material, compared to the organic material in the related art, so that the perovskite-providing stacked solar cell has better stability. Alternatively, the first electron transport layer may be a tin oxide layer, and the second electron transport layer may be a tin oxide layer.
In some alternative embodiments, the material of the first hole transport layer and the second hole transport layer comprises nickel oxide.
Specifically, in the case where the perovskite stacked solar cell structure having the above first hole transporting layer and the second hole transporting layer is a formal structure, the materials of the first hole transporting layer and the second hole transporting layer in the related art may be 2,2', 7' -tetrakis [ N, N-bis (4-methoxyphenyl) amino ] -9,9 '-spirobifluorene (Spiro-ome tad), and in the case where the perovskite stacked solar cell structure having the above first hole transporting layer and the second hole transporting layer is a trans structure, the materials of the first hole transporting layer and the second hole transporting layer in the related art may be poly [ bis (4-phenyl) (2, 4, 6-trimethylphenyl) amine (PTAA), wherein the above 2,2',7 '-tetrakis [ N, N-bis (4-methoxyphenyl) amino ] -9,9' -spirobifluorene and the above poly [ bis (4-phenyl) (2, 4, 6-trimethylphenyl) amine are organic materials, and the above perovskite stacked solar cell is disadvantageous in terms of the cost of the production of the solar cell is more expensive than the perovskite stacked solar cell. Therefore, in this embodiment, a metal oxide or a metal sulfide having a low material cost is used as the source material of the first hole transport layer and the second hole transport layer, thereby reducing the material cost. Optionally, the thickness of the first hole transport layer and the second hole transport layer is 20 to 50nm.
The metal oxide may include nickel oxide (NiO), copper sulfide (CuS), copper sulfide (Cu 2 S), copper oxide (CuO), molybdenum oxide (MoO 3), and tungsten oxide (WO 3). Specifically, the nickel oxide is adopted as the source material of the first hole transport layer and the second hole transport layer, so that the first hole transport layer and the second hole transport layer have the characteristics of higher hole mobility, lower solar reflectivity, higher solar transmissivity, higher matching degree of work function and perovskite laminated solar cell energy level, simplicity in preparation and the like. Further, compared with the organic material in the prior art, the first hole transport layer and the second hole transport layer in this embodiment are made of inorganic materials, so that the organic material has better stability. Alternatively, the first hole transport layer may be a nickel oxide layer, and the second hole transport layer may be a nickel oxide layer.
In some alternative embodiments, the materials of the first electrode layer 10, the second electrode layer 90, and the composite layer 50 are formed independently of any one of a metal or a transparent conductive material.
In the above embodiment, in the case where the materials of the first electrode layer 10, the second electrode layer 90, and the composite layer 50 include metals, the metals may be one of silver (Ag), gold (Au), aluminum (Al), copper (Cu), molybdenum (Mo), tungsten (W), nickel (Ni), magnesium (Mg), tin (Sn), and tan (Ta), or an alloy composed of the above metals; in the case where the materials of the first electrode layer 10, the second electrode layer 90, and the composite layer 50 include transparent conductive materials, the transparent conductive materials may be at least one of tin fluoride oxide (FTO), indium Tin Oxide (ITO), zinc aluminum oxide (AZO), and tin antimony oxide (ATO). Alternatively, the thickness of the first electrode layer 10 and the second electrode layer 90 is 100 to 200nm. Alternatively, the first electrode layer 10 may be a metal layer, and alternatively, the first electrode layer 10 may be a transparent conductive material layer.
In some alternative embodiments, the material of the first perovskite absorber layer 30 includes CsPbBr 3 and the material of the second perovskite absorber layer 70 includes FASnI 3.
In the above embodiment, csPbBr 3 is used as an all-inorganic perovskite material, and because the light, humidity and heat stability of the material are good, the stability of the perovskite stacked solar cell can be greatly improved due to the fact that the material is not easily affected by water and oxygen, and because the material FASnI 3 only comprises one inorganic cation, the energy level matching degree of the perovskite top cell and the perovskite bottom cell can be higher due to the single perovskite component, and the spectrum absorption range can be further widened. Alternatively, the thickness of the first perovskite absorber layer 30 and the second perovskite absorber layer 70 is 300 to 750nm. Optionally, the first perovskite absorption layer 30 is a CsPbBr 3 layer, and the second perovskite absorption layer 70 is a FASnI 3 layer.
According to another aspect of the present utility model, a method for forming the perovskite stacked solar cell structure includes:
First, a first electrode layer is provided, wherein the first electrode layer can be metal or transparent conductive material. Illustratively, the indium tin oxide glass described above is used as the first electrode layer because it has high light transmittance and high electrical conductivity.
Illustratively, prior to applying the first electrode layer described above to the production of a perovskite stacked solar cell structure, ultrasonic cleaning was performed for 30 minutes with acetone and isopropyl alcohol, respectively, in sequence.
Further, a first transmission layer is formed on the first electrode layer.
Illustratively, the first hole transport layer is a first hole transport layer, and the material of the first hole transport layer is nickel oxide. In the process of forming the first transmission layer, firstly, nickel oxide nanocrystals are added into deionized water with the concentration of 10mg/ml, then the deionized water is spun at 3000rpm for 30 seconds, so that the deionized water is positioned on the first electrode layer on a substrate, then the substrate is transferred onto a heating plate, and the first transmission layer is formed by annealing in air at 1000 ℃ for 10 minutes.
Further, a first perovskite absorber layer is formed on a side of the first transport layer remote from the first electrode layer. Illustratively, the first perovskite absorber layer is a wide bandgap perovskite absorber layer, and the material of the first perovskite absorber layer may be CsPbBr 3.
Illustratively, in forming the first perovskite absorption layer, 96mg of cesium bromide (CsBr) and 110mg of lead bromide (PbBr 2) are first dissolved in 1mL of dimethyl sulfoxide (DMSO), then stirred and overnight at 70 ℃ to obtain a CsPbBr 3 solution, and then the CsPbBr 3 perovskite solution is spin-coated onto a side surface of the first transport layer remote from the first electrode layer at a speed of 3000rpm, optionally for a duration of 60s, and then annealed at 80 ℃ for 10min to form the first perovskite absorption layer.
Further, a second transport layer is formed on a side of the first perovskite absorber layer remote from the first transport layer.
Illustratively, the second electron transport layer is a first electron transport layer, and the material of the first electron transport layer is tin oxide. Illustratively, the second transport layer is formed using an Atomic Layer Deposition (ALD) process in which during ALD deposition, the substrate temperature is maintained at 100deg.C, the tetra (dimethylamino) tin (IV) precursor source temperature is maintained at 80deg.C, the H 2 O source is maintained at 18deg.C, and the pulse and purge times of tetra (dimethylamino) tin (TDMASn) are controlled to be 1.6 seconds and 5.0 seconds, N 2 is 90sccm, H 2 O pulse and purge times are 1.0 seconds and 5.0 seconds, N 2 is 90sccm, and cycled 140 times to form tin oxide (SnO 2) having a thickness of 20 nm.
Further, a composite layer is formed on a side of the second transport layer remote from the first perovskite absorber layer. Illustratively, the material of the composite layer is metallic silver. Illustratively, one can employForming the composite layer by vapor deposition at a rate of (2);
Further, a third transport layer is formed on a side of the composite layer away from the second transport layer, and illustratively, the third transport layer is the second hole transport layer.
Illustratively, the material of the second hole transport layer is nickel oxide, and illustratively, the step of forming the third transport layer includes: the nickel oxide nanocrystals were added to deionized water at a concentration of approximately 10mg/ml, and then spin-coated at 3000rpm onto the surface of the composite layer on the side remote from the second transport layer, optionally for 30 seconds, after which the substrate was transferred to a heated plate and annealed in air at 100 ℃ for 10 minutes to form the third transport layer.
Further, a second perovskite absorption layer is formed on one side of the third transmission layer far away from the composite layer, and the second perovskite absorption layer is a narrow-band gap perovskite absorption layer.
Illustratively, the second perovskite absorber layer is FASnI 3 as a material, and the step of forming the second perovskite absorber layer includes: a precursor solution (1.8M) was prepared in a mixed solvent of N, N-Dimethylformamide (DMF) and Dimethylsulfoxide (DMSO) in a volume ratio of 2:1, and the molar ratio of formamidine hydroiodate (FAI) and tin iodide (SnI 2) was controlled to be 1:1, then fluorine iodide (SnF 2) was added to the precursor solution (so that the molar ratio of SnF 2 to SnI 2 was 10 mol%) and the precursor solution was stirred at room temperature for 2 hours, then tin powder (5 mg/mL) was further added to the solution to prevent oxidation, after which the precursor solution containing the remaining tin powder was filtered through a 0.22 μm Polytetrafluoroethylene (PTFE) film, and the filtered solution was spin-coated on the side of the third transmission layer away from the composite layer by a spin-coating process, optionally at a speed of 3500rpm for a spin-coating time of 35s, and then the film was annealed at 100 ℃ for 20min to form the above-mentioned second perovskite absorption layer.
Further, a fourth transport layer is formed on a side of the second perovskite absorption layer away from the third transport layer, and optionally, the fourth transport layer is a second electron transport layer. Optionally, the material of the fourth transmission layer is tin oxide.
Illustratively, the tin oxide is formed using an Atomic Layer Deposition (ALD) process, optionally during deposition such that the substrate temperature is maintained at 100deg.C, the temperature of the tetra (dimethylamino) tin (IV) precursor source is maintained at 80deg.C, the temperature of the H2O source is maintained at 18deg.C, and the pulse and purge times of tetra (dimethylamino) tin (TDMASn) are controlled to 1.6 seconds and 5.0 seconds, N 2 is 90sccm, H 2 O pulse and purge times are 1.0 seconds and 5.0 seconds, and N 2 is 90sccm to form the fourth transport layer described above.
Further, a second electrode layer is formed on a side of the fourth transport layer away from the second perovskite absorption layer.
Illustratively, adoptTo a side of the fourth transport layer remote from the second perovskite absorber layer, optionally the metal may be metallic silver.
From the above description, it can be seen that the above embodiments of the present utility model achieve the following technical effects:
The perovskite bottom cell is arranged on one side of the composite layer, the perovskite top cell is arranged on the other side of the composite layer, and the perovskite bottom cell and the perovskite top cell are connected in series to form the perovskite laminated solar cell, wherein materials of a first transmission layer and a second transmission layer in the perovskite bottom cell, materials of a third transmission layer and a fourth transmission layer in the perovskite top cell are all metal oxides, and materials of a first perovskite absorption layer in the perovskite bottom cell are all inorganic perovskite materials. Compared with the prior art, the material forming the transmission layer is an inorganic material and is better than the stability of an organic material, and the stability of the all-inorganic perovskite material is better than that of the organic perovskite material, so that the perovskite laminated solar cell structure with the first transmission layer, the second transmission layer, the third transmission layer, the fourth transmission layer and the first perovskite absorption layer can have excellent stability.
The above description is only of the preferred embodiments of the present utility model and is not intended to limit the present utility model, but various modifications and variations can be made to the present utility model by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present utility model should be included in the protection scope of the present utility model.
Claims (9)
1. A perovskite stacked solar cell structure comprising:
The perovskite bottom cell comprises a first electrode layer, a first transmission layer, a first perovskite absorption layer and a second transmission layer which are stacked;
The composite layer is arranged on one side, far away from the first perovskite absorption layer, of the second transmission layer;
The perovskite top battery comprises a third transmission layer, a second perovskite absorption layer, a fourth transmission layer and a second electrode layer which are arranged in a stacked mode, wherein the third transmission layer is arranged on one side, far away from the second transmission layer, of the composite layer, the first transmission layer, the second transmission layer, the third transmission layer and the fourth transmission layer are inorganic metal oxides, the first perovskite absorption layer is made of all-inorganic perovskite materials, a second material forming the second perovskite absorption layer is expressed by a chemical formula ABX 3, A is an inorganic cation, B is a divalent metal cation, X is a halogen element, and the second perovskite absorption layer is doped with the same metal element as the divalent metal cation.
2. The perovskite stacked solar cell structure of claim 1, wherein the first perovskite absorber layer is a wide bandgap perovskite absorber layer and the second perovskite absorber layer is a narrow bandgap perovskite absorber layer.
3. The perovskite laminated solar cell structure of claim 1 or 2, wherein a first material forming the first perovskite absorber layer is represented by a chemical formula ABX 3, wherein a is an inorganic cation, B is a divalent metal cation, X is a halogen element, and the first material is the same as or different from the second material.
4. The perovskite-stacked solar cell structure of claim 1, wherein the doping content of the metal element in the second perovskite absorber layer is 5mg/mL.
5. The perovskite stacked solar cell structure as claimed in claim 1 or 2, wherein,
The first transport layer comprises a first electron transport layer, the second transport layer comprises a first hole transport layer, the third transport layer comprises a second electron transport layer, and the fourth transport layer comprises a second hole transport layer; or (b)
The first transport layer includes a first hole transport layer, the second transport layer includes a first electron transport layer, the third transport layer includes a second hole transport layer, and the fourth transport layer includes a second electron transport layer.
6. The perovskite-stacked solar cell structure of claim 5, wherein the material at the first electron transport layer and the second electron transport layer comprises tin oxide.
7. The perovskite-stacked solar cell structure of claim 5, wherein the material of the first hole transport layer and the second hole transport layer comprises nickel oxide.
8. The perovskite-stacked solar cell structure of claim 1 or 2, wherein the materials forming the first electrode layer, the second electrode layer, and the composite layer independently comprise any one of a metal or a transparent conductive material.
9. The perovskite-stacked solar cell structure of claim 1 or 2, wherein the material of the first perovskite absorber layer comprises CsPbBr 3 and the material of the second perovskite absorber layer comprises FASnI 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321068502.9U CN220873589U (en) | 2023-05-04 | 2023-05-04 | Perovskite laminated solar cell structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321068502.9U CN220873589U (en) | 2023-05-04 | 2023-05-04 | Perovskite laminated solar cell structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220873589U true CN220873589U (en) | 2024-04-30 |
Family
ID=90818890
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202321068502.9U Active CN220873589U (en) | 2023-05-04 | 2023-05-04 | Perovskite laminated solar cell structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220873589U (en) |
-
2023
- 2023-05-04 CN CN202321068502.9U patent/CN220873589U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP2880698B9 (en) | Organo metal halide perovskite heterojunction solar cell and fabrication thereof | |
| AU2014264719B2 (en) | Organic-inorganic perovskite based solar cell | |
| US10720282B2 (en) | Producing method of mesoporous thin film solar cell based on perovskite | |
| EP3499597A1 (en) | Electron specific oxide double layer contacts for highly efficient and uv stable perovskite device | |
| KR102068871B1 (en) | Organic-inorganic complex solar cell | |
| EP2804232A1 (en) | High performance perovskite-sensitized mesoscopic solar cells | |
| JP2019208010A (en) | Solar cell | |
| Santos et al. | The renaissance of monolithic dye-sensitized solar cells | |
| Jiang et al. | Recent advances of monolithic all‐perovskite tandem solar cells: from materials to devices | |
| CN220873589U (en) | Perovskite laminated solar cell structure | |
| JP2005064493A (en) | Photoelectric converter and photovoltaic device using the same | |
| KR101903213B1 (en) | Substrate having transparent conductive film and dye-sensitized solar cell | |
| WO2021220926A1 (en) | Solar cell | |
| WO2021220925A1 (en) | Solar cell | |
| WO2021100237A1 (en) | Solar cell | |
| JP6628119B1 (en) | Solar cell | |
| JP6835417B2 (en) | Manufacturing method of organic-inorganic composite solar cell | |
| JP2009009851A (en) | Photoelectric conversion device | |
| KR20200040517A (en) | Composition for preparing hole transporting layer of organic-inorganic complex solar cell, organic-inorganic complex solar cell and manufacturuing method thereof | |
| JP2019134158A (en) | Solar cell | |
| JP7357247B2 (en) | solar cells | |
| US11626258B2 (en) | Solar cell | |
| EP3428988B1 (en) | Organic-inorganic hybrid solar cell | |
| JP2009032661A (en) | Lamination type photoelectric transfer device | |
| WO2020144885A1 (en) | Solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |