CN217281621U - Mode locker and mode-locked laser comprising same - Google Patents
Mode locker and mode-locked laser comprising same Download PDFInfo
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- CN217281621U CN217281621U CN202220049037.3U CN202220049037U CN217281621U CN 217281621 U CN217281621 U CN 217281621U CN 202220049037 U CN202220049037 U CN 202220049037U CN 217281621 U CN217281621 U CN 217281621U
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Abstract
The utility model provides a mode locker and mode-locked laser who contains it belongs to optics technical field. The mode locker comprises a nanostructure layer and a two-dimensional material layer; wherein one side of the two-dimensional material layer is connected with one side of the nanostructure layer; the other side of the two-dimensional material layer is a laser input end; the other side of the nanostructure layer is a laser output end; the nanostructure layer comprises a plurality of periodically arranged nanostructures which are metal; the two-dimensional material layer comprises at least one layer of two-dimensional material. The mode locker and the mode-locked laser comprising the mode locker shorten the saturable absorption dynamic response time of a two-dimensional material by utilizing a plasmon effect, and generate ultrafast laser with the pulse width of picosecond magnitude or below.
Description
Technical Field
The utility model relates to the field of optical technology, especially, relate to a mode locker and mode-locked laser who contains it.
Background
The laser technology is widely applied to the industrial field and scientific research, and people's lives are entered from all directions. Different from the traditional long pulse laser and continuous laser, the ultrafast laser (the ultrashort pulse laser with the pulse width of picosecond magnitude and below) is used as a young member of a laser family, and the nonlinear effect caused by high peak power and ultrashort pulse duration can be used as a basic tool in disciplines of physics, chemistry, biology, materials, information science and the like to intuitively explore the ultrafast dynamic behavior of particles in the micro world, and can solve the high-precision practical application problem which is difficult to achieve by a plurality of conventional methods.
The key technology for generating ultrafast laser is the mode locking technology, and the theoretical basis of the mode locking technology is that fixed phase relations are introduced into different mode pieces in a laser resonant cavity, so that constructive interference is periodically established for lasers in different modes, and ultrashort pulse laser is generated.
The mode locking technology in the prior art is divided into active mode locking and passive mode locking. Due to the high design difficulty, complex structure and high cost of the active mode locking, the passive mode locking technology is more widely applied and researched. The key of the passive mode locking technology is a mode locker which directly determines the width and energy of an output laser pulse. The mode locker realizes the generation of ultrashort pulse laser through a saturable absorber.
In the implementation process of the application, the existing mode-locked laser has at least the following problems:
when the existing mode locker adopts a two-dimensional material as a saturable absorber, due to the thickness limitation of the two-dimensional material, the existing mode locker has a limitation when generating a pulse width less than 1 picosecond.
SUMMERY OF THE UTILITY MODEL
In view of this, for the technical problem who solves mode locker and receive two-dimensional material thickness restriction among the prior art, the embodiment of the utility model provides a mode locker and mode-locked laser who contains it.
In a first aspect, an embodiment of the present invention provides a mold locker, including a nanostructure layer and a two-dimensional material layer;
wherein one side of the two-dimensional material layer is connected with one side of the nanostructure layer; the other side of the two-dimensional material layer is a laser input end; the other side of the nanostructure layer is a laser output end;
the nanostructure layer comprises a plurality of periodically arranged nanostructures which are metal; the layer of two-dimensional material comprises at least one layer of two-dimensional material.
Optionally, the shape of the nanostructures in the nanostructure layer comprises a centrosymmetric pattern and an axisymmetric pattern.
Optionally, the nanostructures are uniform in shape.
Optionally, the nanostructure shape portions are identical.
Optionally, the shape of the nanostructure comprises one or more of a rectangle, a circle, a ring, or a cross.
Optionally, the nanostructures have the same period.
Optionally, the nanostructures differ in period.
Optionally, the period of the nanostructure is greater than or equal to 100nm and less than or equal to 500 nm.
Optionally, the height of the nanostructures is greater than or equal to 5nm and less than or equal to 30 nm.
Optionally, the two-dimensional material layer includes a heterojunction formed by stacking at least two-dimensional materials.
In a second aspect, an embodiment of the present invention further provides a mode-locked laser, including a pump laser, a wavelength division multiplexer, a gain fiber, a mode locker, an isolator, and an output coupler, which are connected in sequence;
the two-dimensional material layer of the mode locker is connected with the output end of the gain optical fiber; and the nanostructure layer of the mode locker is connected with the input end of the output coupler.
The embodiment of the utility model provides a mode locker and mode locking laser who contains it gain following beneficial effect at least:
the mode locker that this application embodiment provided and mode-locked laser including it through the combined action of two-dimensional material layer and nanostructured layer, utilizes the plasmon effect to shorten the two-dimensional material saturable absorption's dynamic response time, produces the ultrafast laser that pulse width is in picosecond magnitude and below.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments or the background art of the present invention, the drawings required to be used in the embodiments or the background art of the present invention will be described below.
Fig. 1 is a schematic diagram illustrating an alternative structure of a mold locker according to an embodiment of the present invention;
fig. 2 is a schematic diagram illustrating an alternative arrangement of nanostructures in a mode locker according to an embodiment of the present invention;
fig. 3 is a schematic diagram illustrating another alternative arrangement of nanostructures in a mode locker according to an embodiment of the present invention;
fig. 4 is a schematic diagram illustrating an alternative arrangement of nanostructures in a mode locker according to an embodiment of the present invention;
fig. 5 is a schematic diagram illustrating an alternative arrangement of nanostructures in a mode locker according to an embodiment of the present invention;
FIG. 6 illustrates an alternative embodiment of a mode-locked laser provided by embodiments of the present application;
fig. 7 is a schematic diagram illustrating an alternative structure of a mold locker according to an embodiment of the present invention.
The reference numerals in the drawings denote:
100-a nanostructure layer; 101-a nanostructure; 102-superstructure unit;
200-a two-dimensional layer of material; 300-pump laser; 400-wavelength division multiplexer; 500-gain fiber; 600-an isolator; 700-output coupler.
Detailed Description
To facilitate an understanding of the present application, the present application will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present application are shown in the drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
It will be understood that when an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "mounted," "one end," "the other end," and the like are used herein for illustrative purposes only. In this application the terms "input", "output", "feedback", "form", etc. should be understood to describe an optical, electrical change or an optical, electrical process. Such as "forming" merely means that an optical signal or an electrical signal is optically or electrically changed after passing through the element, the apparatus or the device, so that the optical signal or the electrical signal is processed to obtain a signal required for implementing the technical solution or solving the technical problem.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
The mode locker plays a role of passive mode locking through a saturable absorber. A saturable absorber is an optical device with a defined loss. When the incident light intensity exceeds the saturation intensity threshold of the saturable absorber, the optical loss becomes small and the transmittance increases. The basic principle is as follows: when the saturable absorber is excited by a beam of light, carriers in the saturable absorber are pumped from a ground state to an excited state, and in a strongly excited state, the ground state ions are depleted and the excited state is partially occupied, so that the absorption is saturated. The excited state returns to the ground state through thermal stabilization and recombination processes, and thus can absorb photons.
Key performance parameters of saturable absorbers include wavelength range, dynamic response, and intensity threshold. The wavelength range determines the absorption band of the saturable absorber. The dynamic response determines the time for the saturable absorber to revert from a saturated state to an initial state (or to an unsaturated state), which corresponds to the width of the pulse. The saturation intensity threshold corresponds to the intensity of the output laser light.
A two-dimensional material is a material consisting of a single or a few layers of atoms or molecules, which are strongly covalently or ionically bonded within the layers and which are bonded between the layers by van der waals forces, which are weaker. The two-dimensional material used as a saturable absorber has a lower saturation intensity threshold, corresponding light loss is small, and output laser power is high. Therefore, the two-dimensional material can be applied to a laser resonant cavity of all-fiber with ultra-low loss, so that the whole laser system has higher stability. Secondly, the two-dimensional material can cover a wide wavelength range, and laser can realize full coverage of different frequency bands. However, the thickness of the two-dimensional material is extremely thin and only has atomic order, and the absorptivity is limited, so that the generation of extreme pulses is limited.
Fig. 1 shows a schematic structural diagram of a mold locker provided in an embodiment of the present application. As shown in fig. 1, the mode locker includes a nanostructure layer 100 and a two-dimensional material layer 200. Wherein, one end of the two-dimensional material layer 200 is connected with one end of the nanostructure layer 100; the other end of the two-dimensional material layer 200 is a laser input end; the other end of the nanostructure layer 100 is a laser output end.
The nanostructure layer 100 includes a plurality of periodically arranged nanostructures 101, and the nanostructures 101 are metal; the two-dimensional material layer 200 comprises at least one layer of two-dimensional material.
Specifically, the nanostructure 100 and the two-dimensional material layer 200 form a heterojunction, and when incident laser light irradiates the two-dimensional material layer 200, carriers in the two-dimensional material layer 200 are pumped from a ground state to an excited state, in a strongly excited state, ground state particles are depleted, the excited state is partially occupied, and absorption of photons by the two-dimensional material layer 200 reaches saturation. Since the thickness of the two-dimensional material layer is extremely thin (less than 1nm), photons absorbed when being irradiated with light are limited, and the time required for the carriers in the two-dimensional material layer 200 to transition from the ground state to the excited state is long, resulting in an excessively long dynamic response time and a limited output pulse width.
The plurality of metal nanostructures 101 in the nanostructure layer 100 are periodically arranged, and when the nanostructures 101 are irradiated, hot electrons are generated, and the hot electrons oscillate near the surface of the nanostructures 101. That is, localized plasmons are generated at the surface of the nanostructure layer 100. The charge carriers in the two-dimensional material layer 200 interact with the electrons on the surface of the nano structure 101, so that the transition of the charge carriers in the two-dimensional material layer 200 from a ground state to an excited state is accelerated, the time of dynamic response is shortened, and emergent laser with narrower pulse width can be output, wherein the emergent laser is ultrafast laser.
Through the modulation of the nanostructure layer 100, the laser output by the mode locker provided by the embodiment of the application has a narrower pulse width (less than 1 picosecond) than the laser output by the two-dimensional material layer 200, and the requirement of ultrafast laser is met.
In an alternative embodiment, the two-dimensional material layer 200 includes graphene, single-element silylene, germanene, stannene, borolene, black phosphorus, and the like. Illustratively, the two-dimensional material layer 200 may further include a transition metal chalcogenide such as molybdenum disulfide (MoS) 2 Molybdenum Disulfide), tungsten diselenide (WSe) 2 Tunsten Diselenide), rhenium disulfide (ReS) 2 Rhenium Disufide), platinum diselenide (PtSe) 2 Platinum Diselenide) and niobium Diselenide (NbSe) 2 Niobium Diselenide), etc., main group metal chalcogenides such as Gallium Sulfide (GaS, galium Sulfide), Indium Selenide (InSe, Indium Sulfide), tin Sulfide (SnS, Stannum Sulfide), and tin disulfide (SnS) 2 Stannum Disulfide), and other two-dimensional materials such as Hexagonal Boron Nitride (h-BN, Hexagonal Boron Nitride), chromium triiodide (CrI) 3 ，Chromium Triodide)、NiPS 3 And Bi 2 O 2 Se, and the like. In some embodiments, the two-dimensional material layer 200 may further include a heterojunction formed by stacking two or more two-dimensional materials, such as MoS2and/WSe 2, h-BN/graphene heterojunction and the like. Alternatively, the two-dimensional material may be prepared by a Chemical Vapor Deposition (CVD) method, a redox intercalation delamination method, a hydrothermal template assembly method, an ultrasonic delamination method, or the like.
Preferably, the material of the nanostructures 101 is a noble metal, such as gold and silver. The shape of the nanostructures 101 in the nanostructure layer 100 includes a centrosymmetric pattern or an axisymmetric pattern. The nanostructure layer 100 is a sub-wavelength artificial nanostructure film that modulates incident light according to the nanostructures 101 thereon. The nanostructures 101 may directly manipulate the phase, amplitude, and polarization properties of the light.
It is understood that, in the embodiment of the present invention, the shape and arrangement of the nano-structures 101 may be designed according to the requirement. The shape of the nanostructures 101 in the nanostructure layer 100 may be uniform or partially the same. Alternatively, as shown in fig. 2-5, the shape of the nanostructures 101 includes one or more of a rectangle, a circle, a ring, or a cross. Alternatively, the period of the nanostructures 101 may be the same or different. Illustratively, the period of the nanostructures 101 in the present invention is greater than or equal to 100nm, and less than or equal to 500 nm. The nanostructure period refers to the distance between the centers of two adjacent nanostructures. It should be noted that in the embodiment of the present application, the shape of the nanostructure 101 has a much larger influence on the optical performance of the nanostructure layer 100 than the arrangement shape of the nanostructure 101.
In addition, the height and diameter of the nanostructure 101 may be designed according to the wavelength of the incident laser light. Preferably, the height of the nanostructure 101 provided by the embodiment of the present application is greater than or equal to 5nm and less than or equal to 30 nm.
The mode locker that this application embodiment provided combines through two-dimensional material layer and nanostructured layer, under the combined action of the plasmon that the nanostructured layer produced and two-dimensional material layer, has shortened dynamic response's time, makes the laser of this mode locker output have narrower pulse bandwidth.
In view of the fact that the output laser of the mode locker provided in any of the above embodiments has a narrower pulse width, the present embodiment also provides a mode-locked laser, which includes, as shown in fig. 6, a pump laser 300, a wavelength division multiplexer 400, a gain fiber 500, the mode locker provided in any of the above embodiments, an isolator 600, and an output coupler 700, connected in sequence.
Wherein, the two-dimensional material layer 200 of the mode locker is connected with the output end of the gain fiber 500; the nanostructure layer 100 of the aforementioned mode locker is connected to the input end of the output coupler 700.
The pump laser 300 is used as a laser source, and the pump laser emitted from the pump laser 300 is coupled by the wavelength division multiplexer 400 and then injected into the gain fiber 500. The gain fiber 500 converts the pump laser light into signal light. The signal light is emitted from one side of the two-dimensional material layer 200 of the mode locker, and the ultrafast laser is generated under the combined action of the two-dimensional material layer 200 and the nanostructure layer 100. The isolator 600 is used to realize unidirectional output of ultrafast laser. The output coupler 700 is used to output ultrafast laser light generated by the mode locker.
In some alternative embodiments, the gain fiber 500 is a rare-earth doped fiber, which has a large laser bandwidth, typically tens of nanometers, and is more conducive to the generation of very short pulses. Alternatively, the gain fiber 500 includes erbium-doped fiber (EDF), ytterbium-doped fiber (YDF), and thulium-doped fiber (TDF).
The exemplary embodiment of the present application provides a mode-locked laser, which includes a pump laser 300, a wavelength division multiplexer 400, a gain fiber 500, a mode locker provided in any of the above embodiments, an isolator 600, and an output coupler 700, which are connected in sequence.
Illustratively, the corresponding laser output wavelengths (in nanometers) of the different two-dimensional material layers 200 when different gain fibers 500 are selected are shown in table one.
Watch 1
| Ytterbium-doped optical fiber | Erbium doped optical fiber | Thulium doped optical fiber | |
| Graphene | 1069 | 1540 | 1950 |
| Molybdenum disulfide | 1052 | 1550 | 1912 |
| Tungsten disulfide | 1054 | 1568 | 1863 |
| Black phosphorus | 1085 | 1560 | 1900 |
Wherein, the two-dimensional material layer 200 of the mode locker is connected with the output end of the gain fiber 500; the nanostructure layer 100 of the aforementioned mode locker is connected to the input end of the output coupler 700.
In this embodiment, the two-dimensional material layer 200 is single-layer graphene, the nanostructure layer 100 is a plurality of periodically arranged nanostructures 101, and the material of the nanostructures 101 is gold. The nanostructures 101 are periodically arranged in the form of superstructure units 102, wherein the superstructure units 102 are rectangular, and the center of the rectangle is the nanostructure 101 in the shape of a cuboid. The period of the superstructure unit 102 is 50 nm. The length, width and height of the nanostructures 101 are 80nm, 20nm and 10nm, respectively.
When the gain fiber 500 in the mode-locked laser is an ytterbium-doped fiber, the mode locker in the embodiment of the application can play a good passive mode-locking role in the wave band with the incident wavelength of about 1 micron, the specific output wavelength is between 1 micron and 1.1 micron, the pulse width is less than 30 picoseconds, the output laser energy is more than 20 milliwatts, and the repeatable frequency exceeds 10 megahertz. When the selected gain fiber 500 in the mode-locked laser is an erbium-doped fiber, the mode locker in the embodiment of the application can play a good passive mode-locking role in a wave band with an incident wavelength of about 1.5 micrometers, the specific output wavelength is between 1.5 micrometers and 1.65 micrometers, the pulse width is less than 200 femtoseconds, the output laser energy is more than 10 milliwatts, and the repeatable frequency exceeds 30 megahertz.
To sum up, the mode locker and the mode-locked laser including the mode locker provided by the embodiment of the application utilize the plasmon effect to shorten the saturable absorption dynamic response time of the two-dimensional material through the combined action of the two-dimensional material layer and the nanostructure layer, and generate the ultrafast laser with the pulse width of picosecond magnitude or less.
The above description is only a specific implementation manner of the embodiments of the present invention, but the scope of the embodiments of the present invention is not limited thereto, and any person skilled in the art can easily think of the changes or substitutions within the technical scope of the embodiments of the present invention, and all the changes or substitutions should be covered within the scope of the embodiments of the present invention. Therefore, the protection scope of the embodiments of the present invention shall be subject to the protection scope of the claims.
Claims (11)
1. A mode locker, characterized in that the mode locker comprises a nanostructure layer (100) and a two-dimensional material layer (200);
wherein one side of the two-dimensional material layer (200) is connected with one side of the nanostructure layer (100); the other side of the two-dimensional material layer (200) is a laser input end; the other side of the nanostructure layer (100) is a laser output end;
the nanostructure layer (100) comprises a plurality of periodically arranged nanostructures (101), and the nanostructures (101) are metal; the two-dimensional material layer (200) comprises at least one layer of two-dimensional material.
2. The mode locker of claim 1, wherein the shape of the nanostructure (101) in said nanostructure layer (100) comprises a centrosymmetric pattern or an axisymmetric pattern.
3. The mode locker of claim 2, wherein said nanostructure (101) has a uniform shape.
4. The mode locker of claim 2, wherein said nanostructures (101) are partially identical in shape.
5. The mode locker of any of claims 2 to 4, wherein said nanostructure (101) has a shape comprising one or more of a rectangle, a circle, a ring or a cross.
6. A mode locker according to any one of claims 2 to 4, characterized in that the periods of said nanostructures (101) are the same.
7. The mode locker of any of claims 2 to 4, wherein the nanostructures (101) differ in period.
8. The mode locker of any of claims 2 to 4, wherein the period of said nanostructure (101) is greater than or equal to 100nm and less than or equal to 500 nm.
9. The mode locker of claim 2, wherein the height of said nanostructure (101) is greater than or equal to 5nm and less than or equal to 30 nm.
10. The mode locker of claim 1 wherein said two-dimensional material layer comprises a heterojunction of stacked at least two-dimensional materials.
11. A mode-locked laser, characterized in that it comprises a pump laser (300), a wavelength division multiplexer (400), a gain fiber (500), a mode locker according to any of claims 1 to 8, an isolator (600) and an output coupler (700) connected in sequence;
wherein the two-dimensional material layer (200) of the mode locker is connected with the output end of the gain fiber (500); the nanostructure layer (100) of the mode locker is connected with the input end of the output coupler (700).
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11927769B2 (en) | 2022-03-31 | 2024-03-12 | Metalenz, Inc. | Polarization sorting metasurface microlens array device |
| US11978752B2 (en) | 2019-07-26 | 2024-05-07 | Metalenz, Inc. | Aperture-metasurface and hybrid refractive-metasurface imaging systems |
| US11988844B2 (en) | 2017-08-31 | 2024-05-21 | Metalenz, Inc. | Transmissive metasurface lens integration |
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2022
- 2022-01-10 CN CN202220049037.3U patent/CN217281621U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11988844B2 (en) | 2017-08-31 | 2024-05-21 | Metalenz, Inc. | Transmissive metasurface lens integration |
| US11978752B2 (en) | 2019-07-26 | 2024-05-07 | Metalenz, Inc. | Aperture-metasurface and hybrid refractive-metasurface imaging systems |
| US11927769B2 (en) | 2022-03-31 | 2024-03-12 | Metalenz, Inc. | Polarization sorting metasurface microlens array device |
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