CN214591334U - Ultra-wideband gradient temperature compensation distributed microwave power amplification chip - Google Patents
Ultra-wideband gradient temperature compensation distributed microwave power amplification chip Download PDFInfo
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- CN214591334U CN214591334U CN202120688079.7U CN202120688079U CN214591334U CN 214591334 U CN214591334 U CN 214591334U CN 202120688079 U CN202120688079 U CN 202120688079U CN 214591334 U CN214591334 U CN 214591334U
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Abstract
The utility model discloses an ultra wide band gradual change temperature compensation distributing type microwave power amplification chip belongs to microwave radio frequency chip field. The utility model discloses a cascode amplifies the structure, input artifical transmission line and output artifical transmission line, the cascode amplifies the structure and includes the same cascode network that amplifies of a plurality of level structures, every level cascode network input that amplifies all is connected with input artifical transmission line, every level cascode network output that amplifies all is connected with output artifical transmission line, every level cascode network that amplifies all includes cascode unit that amplifies, the RC stable cell, first grid voltage temperature compensated voltage unit, grid to ground unit, second grid voltage temperature compensated voltage unit, match electric capacity and first biasing resistance. The transistor with gradually reduced size and the artificial transmission line matched independently expand high-frequency gain and power bandwidth, and temperature compensation of the gate voltage of the transistor is realized by using the resistance characteristics of different temperature coefficients.
Description
Technical Field
The utility model relates to a microwave radio frequency chip field, concretely relates to is an ultra wide band gradual change temperature compensation distributing type microwave power amplification chip.
Background
The ultra-wideband microwave power amplification chip has wide application in wireless communication, ultra-wideband radar, electronic countermeasure and other wideband systems. The power amplifier needs to use a large-sized transistor to obtain sufficient output power, but the parasitic resistance and parasitic capacitance of the large-sized transistor significantly deteriorate the operating bandwidth and the amplification gain. The distributed amplification structure splits a transistor with the total gate width of Wch into N Wch/N smaller-sized transistors, utilizes microstrip lines to compensate parasitic capacitance of each transistor, realizes ultra wide band based on N repeated amplification structures which are connected in parallel, and is a mainstream structure of current multi-octave ultra wide band amplification.
The grid voltage of the traditional distributed amplification structure is controlled by an external feeding unit, and the fluctuation of the external feeding voltage can cause the working point of the chip to deviate from the normal state. On the other hand, the direct current and radio frequency performance of the transistor can change along with the temperature change, and if the grid voltage cannot be compensated by the temperature, the radio frequency performance can be deteriorated and even the chip can be damaged.
For an ultra-wideband amplification chip with a working frequency as low as 50MHz or lower, a blocking capacitor with a large capacitance value is often required, the blocking capacitor cannot be integrated inside the chip usually, and the blocking capacitor needs to be added outside the chip by a system, so that the integration complexity and cost are increased.
SUMMERY OF THE UTILITY MODEL
The utility model aims at providing an extension high frequency gain, power broadband realize the ultra wide band gradual change temperature compensation distributing type microwave power amplification chip of temperature compensation partial pressure.
In order to solve the technical problem, the technical scheme of the utility model as follows:
an ultra-wideband gradient temperature compensation distributed microwave power amplification chip comprises a cascode amplification structure, an input artificial transmission line and an output artificial transmission line;
the cascode amplification structure comprises a plurality of stages of cascode amplification networks with the same structure, the input end of each stage of the cascode amplification networks is connected with an input artificial transmission line, and the output end of each stage of the cascode amplification networks is connected with an output artificial transmission line;
each stage of the cascode amplifying network comprises a cascode amplifying unit, an RC (resistor-capacitor) stabilizing unit, a first grid voltage temperature compensation voltage division unit, a grid-to-ground unit, a second grid voltage temperature compensation voltage division unit, a matching capacitor and a first biasing resistor;
the cascode amplifying unit comprises a cascode transistor and a common-gate transistor, the sizes of the cascode transistor and the common-gate transistor in the same stage are the same, the sizes of the common-gate transistor and the common-gate transistor in each stage are gradually reduced along the direction from signal input to signal output, the drain electrode of the cascode transistor is connected with the source electrode of the common-gate transistor through a peak value inductor, the source electrode of the cascode transistor is grounded, the gate electrode of the cascode transistor is connected with one end of a stabilizing resistor and one end of a stabilizing capacitor which are connected in parallel in an RC stabilizing unit, the other end of the stabilizing resistor and the other end of the stabilizing capacitor are connected to an input artificial transmission line through a matching capacitor and are also connected with the output end of a first gate voltage temperature compensation voltage division unit through a first biasing resistor, the gate electrode of the common-gate transistor is connected with the output end of a gate to ground unit, and the input end of the gate to ground unit is connected with the output end of a second gate voltage temperature compensation voltage division unit, and the drain electrode of the common-gate transistor is connected with an output artificial transmission line.
Further, the first gate voltage temperature compensation voltage division unit comprises a first voltage division resistor and a second voltage division resistor, wherein one end of the first voltage division resistor is connected with the first gate voltage, the other end of the first voltage division resistor is respectively connected with one end of the first bias resistor and one end of the second voltage division resistor, and the other end of the second voltage division resistor is grounded;
the second grid voltage temperature compensation voltage division unit comprises a third voltage division resistor and a fourth voltage division resistor, one end of the third voltage division resistor is connected with the second grid voltage, the other end of the third voltage division resistor is respectively connected with one end of the fourth voltage division resistor and the input end of the grid to ground unit, and the other end of the fourth voltage division resistor is grounded.
Further, the first voltage dividing resistor and the third voltage dividing resistor adopt TFR resistors with negative temperature coefficients, and the second voltage dividing resistor and the fourth voltage dividing resistor adopt MESA resistors with positive temperature coefficients.
The grid-to-ground unit comprises a common grid resistor, a second bias resistor and a ground capacitor, one end of the common grid resistor is connected with the grid of the common grid transistor, the other end of the common grid resistor is respectively connected with one end of the second bias resistor and one end of the ground capacitor, the other end of the second bias resistor is connected with the output end of the second grid voltage temperature compensation voltage division unit, and the other end of the ground capacitor is grounded.
The input artificial transmission line comprises a plurality of input inductors which are sequentially connected, the input end of the first input inductor is connected with a radio frequency input, the output end of the last input inductor is connected with a grid absorption unit, a branch output end of the input artificial transmission line is arranged between every two input inductors, and one branch output end is connected with the input end of the primary cascode amplification network;
the output artificial transmission line comprises a plurality of output inductors which are connected in sequence, the input end of the first output inductor is connected with the drain electrode absorption unit, the output end of the last output inductor is connected with the radio frequency output, a branch input end of the output artificial transmission line is arranged between every two output inductors, and the branch input end is connected with the output end of the primary cascode amplification network.
Furthermore, the grid absorption unit comprises a first absorption resistor and a first absorption grounding capacitor, one end of the first absorption resistor is connected with the output end of the last input inductor in the input artificial transmission line, the other end of the first absorption resistor is connected with one end of the first absorption grounding capacitor, and the other end of the first absorption grounding capacitor is grounded;
the drain electrode absorption unit comprises a second absorption resistor and a second absorption grounding capacitor, one end of the second absorption resistor is connected with the input end of the first output inductor in the output artificial transmission line, the other end of the second absorption resistor is connected with one end of the second absorption grounding capacitor, and the other end of the second absorption grounding capacitor is grounded.
Further, the cascode structure includes cascode networks of odd-numbered stages or even-numbered stages not less than 1.
The utility model has the advantages that:
1. the utility model discloses a distributed amplification structure is provided with multistage cascode amplifier network, and the common source transistor in the same level is the same with common grid transistor size, and common source transistor in the different levels diminishes with common grid transistor size step by step along signal input to signal output direction, through the artifical transmission line of the transistor that the size diminishes step by step and independent matching, has expanded high frequency gain and power bandwidth.
2. The utility model discloses adopt matching electric capacity and RC to stabilize the unit and match with the artifical transmission line of input at the input stage, realized radio frequency signal's blocking function when obtaining better input matching, simplified the system.
3. The utility model discloses utilize the resistive characteristic of different temperature coefficients, adopt resistance partial pressure formula structure at first grid voltage port and second grid voltage port, realized the temperature compensation to transistor grid voltage when reducing voltage fluctuation.
Drawings
FIG. 1 is a circuit diagram of the present invention;
FIG. 2 is a conventional distributed power amplifier circuit;
fig. 3 is a comparison of voltage division effects using a gate bias temperature compensation circuit.
The labels in the figure are: 10-a cascode amplification unit; an 11-RC stabilization unit; 12-input artificial transmission line; 13-a first grid voltage temperature compensation voltage division unit; 14-a gate absorption cell; 15-gate to ground cell; 16-a second grid voltage temperature compensation voltage division unit; 17-output artificial transmission line; 18-drain absorption cell.
Detailed Description
The present invention will be further described with reference to the accompanying drawings and examples.
Example 1
As shown in fig. 1, an ultra-wideband gradual-change temperature compensation distributed microwave power amplification chip includes a cascode amplification structure, an input artificial transmission line 12, and an output artificial transmission line 17. The cascode amplification structure comprises a plurality of stages of cascode amplification networks with the same structure, the input end of each stage of cascode amplification network is connected with the input artificial transmission line 12, and the output end of each stage of cascode amplification network is connected with the output artificial transmission line 17.
Each stage of cascode amplifying network comprises a cascode amplifying unit 10, an RC stabilizing unit 11, a first gate voltage temperature compensation voltage division unit 13, a gate-to-ground unit 15, a second gate voltage temperature compensation voltage division unit 16, a matching capacitor and a first biasing resistor.
In fig. 1, M _3, M _5, … …, and M _2n-1 are all common source transistors, M _2, M _4, M _6, … …, and M _2n are all common gate transistors, Lp _1, Lp _2, Lp _3, … …, and Lp _ n are all peak inductors, Li _1, Li _2, Li _3, … …, Li _ n, and Li _ n +1 are all input inductors, and Lo _1, Lo _2, Lo _3, … …, Lo _ n, and Lo _ n +1 are all output inductors. I _1, I _2, I _3, … …, I _ n are all output branch nodes, O _1, O _2, O _3, … …, O _ n are all input branch nodes. R _1, R _2, R _3, … … and R _ n are all stable resistors, C _1, C _2, C _3, … … and C _ n are stable capacitors, Rg1_1, Rg1_2, Rg1_3, … … and Rg1_ n are all first bias resistors, Ci _1, Ci _2, Ci _3, … … and Ci _ n are all matching capacitors, Rg2_1, Rg2_2, Rg2_3, … … and Rg2_ n are all second bias resistors, Rg1_1, Rcg _2, Rcg _3, … … and Rcg _ n are all common gate resistors, and Cg _1, Ccg _2, Ccg _3, … … and Ccg _ n are all grounding capacitors.
Wherein, the cascode amplifying unit 10 includes a common-source transistor M _1 and a common-gate transistor M _2, the drain of the common-source transistor M _1 is connected to the source of the common-gate transistor M _2 through a peak inductor Lp _1, the source of the common-source transistor M _1 is grounded, the gate of the common-source transistor M _1 is connected to one end of a stabilizing resistor R _1 and one end of a stabilizing capacitor C _1 connected in parallel in the RC stabilizing unit 11, the other end of the stabilizing resistor R _1 and the other end of the stabilizing capacitor C _1 are connected to the input artificial transmission line 12 through a matching capacitor Ci _1, and are also connected to the output end of the first gate voltage temperature-compensated voltage dividing unit 13 through a first biasing resistor Rg1_1, the gate of the common-gate transistor M _2 is connected to the output end of the gate-to-ground unit 15, the input end of the gate-to-ground unit 15 is connected to the output end of the second gate voltage temperature-compensated voltage dividing unit 16, the drain of the common-gate transistor M _2 is connected to the output artificial transmission line 17.
The sizes of the common-source transistor and the common-gate transistor in the same stage of the cascode network are the same, namely the sizes of M _1 and M _2 are the same, the sizes of M _3 and M _4 are the same, … …, and the sizes of M _2n-1 and M _2n are the same, and the sizes of the common-source transistor and the common-gate transistor in each stage are gradually reduced along the direction from the signal input to the signal output, namely the sizes of M _1 and M _2 are larger than the sizes of M _3 and M _4, the sizes of M _3 and M _4 are larger than the sizes of M _5 and M _6, … …, the sizes of M _2n-3 and M _2n-2 are larger than the sizes of M _2n-1 and M _2 n.
Fig. 2 shows a conventional distributed power amplifying circuit, in which transistors M _1 to M _2n have the same size and the same operating state, and input artificial transmission lines Li _2, Li _3, … …, Li _ n and output artificial transmission lines Lo _2, Lo _3, … …, Lo _ n have the same structure. From the radio frequency input end to the radio frequency output end, the current is accumulated step by step, and each stage of transistor has the same load, so that the M _4 drain voltage swing is larger than the M _2 drain voltage swing, the M _6 drain voltage swing is larger than the M _4 drain voltage swing, and so on, the M _2n drain voltage swing is larger than the M _2n-2 drain voltage swing. Therefore, although the transistors of each stage have the same size and the same direct current bias, the radio frequency signal distribution under the large-signal condition is not uniform, and the transistors do not work under the optimal load impedance condition, so that the large-signal performance is lost.
The cascode amplification structure provided in this embodiment is a gradient distributed structure, and a multi-stage cascode amplification network is adopted, in which sizes of cascode transistors and common-gate transistors are reduced step by step along a signal output direction, that is, sizes of M _1 and M _2 are the largest, and sizes of M _2n-1 and M _2n are the smallest, so that the structure can maintain an optimal large-signal state under a condition of gradually increasing current, and each stage is guaranteed to have the same voltage swing. Meanwhile, under the action of each stage of cascode amplifying network, the step-by-step superposition of voltage and current is realized by matching with an input-output artificial transmission line, namely, input inductors Li _1, Li _2, Li _3, … …, Li _ n and Li _ n +1 in the input artificial transmission line and output inductors Lo _1, Lo _2, Lo _3, … …, Lo _ n and Lo _ n +1 in the output artificial transmission line are also matched with each other and gradually changed step by step, and high-frequency gain and power bandwidth are expanded through transistors with gradually reduced sizes and the artificial transmission lines which are independently matched.
The matching capacitor arranged can play a role in blocking an input signal while participating in matching of the artificial transmission line, the RC stabilizing unit and the transistor, and the structure can avoid a large-capacitance blocking capacitor, so that a chip integrates an input blocking function, saves an extra blocking capacitor at a system level, simplifies application and reduces cost.
Example 2
On the basis of embodiment 1, the first gate voltage temperature-compensated voltage dividing unit 13 includes a first voltage dividing resistor Rbb1 and a second voltage dividing resistor Rbb2, wherein one end of the first voltage dividing resistor Rbb1 is connected to the first gate voltage VGG1, the other end of the first voltage dividing resistor Rbb1 is respectively connected to one end of the first bias resistor Rg1_1 and one end of the second voltage dividing resistor Rbb2, and the other end of the second voltage dividing resistor Rbb2 is grounded.
The second gate voltage temperature compensated voltage divider unit 16 includes a third voltage dividing resistor Rbb3 and a fourth voltage dividing resistor Rbb4, wherein one end of the third voltage dividing resistor Rbb3 is connected to the second gate voltage VGG2, the other end of the third voltage dividing resistor Rbb3 is respectively connected to one end of the fourth voltage dividing resistor Rbb4 and the input end of the gate-to-ground unit 15, and the other end of the fourth voltage dividing resistor Rbb4 is grounded.
In the conventional distributed power amplifying circuit shown in fig. 2, the first gate voltage VGG1 directly controls the common-source transistors M _1, M _3, … … and M _2n-1 through the bias resistor Rb 1; the second gate voltage VGG2 directly controls the common-gate transistors M _2, M _4, … …, M _2n through the bias resistor Rb 3. Fluctuations in VGG1 and VGG2 are transferred to the gates of the corresponding transistors in constant amplitude, and the transistors are subjected to temperature drift as the temperature changes. The higher the temperature, the smaller the gate threshold voltage; the lower the temperature, the greater the gate threshold voltage.
In the example, the first gate voltage port and the second gate voltage port adopt a resistance voltage division structure, the actual voltages of the gates of the common source transistors M _1, M _3, … … and M _2n-1 are divided by Rbb1 and Rbb2 and are led out, and the voltage drop is the same as that of the Rbb 2; the actual voltage of the gates of the common-gate transistors M _2, M _4, … … and M _2n is divided by Rbb3 and Rbb4, and is the same as the voltage drop of Rbb 4. The voltage fluctuation amplitude of the VGG1 and the VGG2 is loaded on the transistor gate in a voltage division ratio, so that the actual gate voltage fluctuation is smaller than the external voltage fluctuation.
Example 3
On the basis of embodiment 2, the first voltage-dividing resistor Rbb1 and the third voltage-dividing resistor Rbb3 adopt TFR resistors with negative temperature coefficients, and the second voltage-dividing resistor Rbb2 and the fourth voltage-dividing resistor Rbb4 adopt MESA resistors with positive temperature coefficients.
The voltage division result of the negative temperature coefficient can be realized through proper combination, as shown in fig. 3, the gate voltage is reduced after temperature compensation voltage division along with the temperature rise, and the temperature compensation of the gate voltage of the transistor is realized according with the temperature characteristic of the transistor. Interchanging Rbb1 and Rbb2 and interchanging Rbb3 and Rbb4 can achieve a positive temperature coefficient voltage division result for different transistor characteristics.
Example 4
On the basis of embodiment 1, the gate-to-ground unit 15 includes a common gate resistor Rcg _1, a second bias resistor Rg2_1, and a ground capacitor Ccg _1, one end of the common gate resistor Rcg _1 is connected to the gate of the common gate transistor M _2, the other end of the common gate resistor Rcg _1 is connected to one end of a second bias resistor Rg2_1 and one end of the ground capacitor Ccg _1, the other end of the second bias resistor Rg2_1 is connected to the output end of the second gate voltage temperature compensation voltage dividing unit 16, and the other end of the ground capacitor Ccg _1 is grounded. The gate-to-ground unit 15 can filter the direct-current power supply signal and stabilize the static operating point of the common-gate transistor M _2, and meanwhile, the gate-to-ground unit participates in circuit matching, so that the inter-stage stability of the common-gate transistor M _2 is improved.
Example 5
On the basis of embodiment 1, the input artificial transmission line 12 includes a plurality of input inductors sequentially connected, i.e., Li _1, Li _2, Li _3, … …, Li _ n, and Li _ n +1, an input end of the first input inductor Li _1 is connected to the radio frequency input RFIN, an output end of the last input inductor Li _ n +1 is connected to the gate absorbing unit 14, one branch output end of the input artificial transmission line 12, i.e., output ends corresponding to the I _1, I _2, I _3, … …, and I _ n output branch nodes, is disposed between every two input inductors, and one branch output end is connected to an input end of the primary cascode amplifying network.
Similarly, the output artificial transmission line 17 includes a plurality of output inductors sequentially connected, that is, Lo _1, Lo _2, Lo _3, … …, Lo _ n, and Lo _ n +1, an input end of the first output inductor Lo _1 is connected to the drain absorption unit 18, an output end of the last output inductor Lo _ n +1 is connected to the radio frequency output RFOUT, a branch input end of the output artificial transmission line 17, that is, an input end corresponding to the input branch node of O _1, O _2, O _3, … …, and O _ n, is disposed between every two output inductors, and one branch input end is connected to an output end of the primary cascode amplification network.
Under the action of the cascade amplification network, the transistors with gradually changed sizes and the input inductors and the input voltages in the input and output artificial transmission lines are independently matched, so that the voltages and the currents are superposed step by step, and the optimization of the performance of the amplification chip, such as the expansion of the high-frequency bandwidth, is realized.
Example 6
On the basis of embodiment 5, the gate absorbing unit 14 includes a first absorbing resistor and a first absorbing ground capacitor, one end of the first absorbing resistor is connected to the output end of the last input inductor Li _ n +1 in the input artificial transmission line 12, the other end of the first absorbing resistor is connected to one end of the first absorbing ground capacitor, and the other end of the first absorbing ground capacitor is grounded. The gate absorption unit 14 is used to prevent the rf signal from interfering with the dc bias.
The drain absorption unit 18 includes a second absorption resistor and a second absorption ground capacitor, one end of the second absorption resistor is connected to the input end of the first output inductor Lo _1 in the output artificial transmission line 17, the other end of the second absorption resistor is connected to one end of the second absorption ground capacitor, and the other end of the second absorption ground capacitor is grounded. The drain absorption unit 18 is to provide a radio frequency path to ground and also to block dc.
Example 7
On the basis of embodiment 1, the cascode amplification structure in the power amplification chip may be set as a cascode network of an odd-numbered stage or an even-numbered stage not less than 1. The setting can be carried out according to the actual use condition, and is not limited to a specific numerical progression.
Claims (7)
1. An ultra-wideband gradient temperature compensation distributed microwave power amplification chip is characterized by comprising a cascode amplification structure, an input artificial transmission line (12) and an output artificial transmission line (17);
the cascode amplification structure comprises a plurality of stages of cascode amplification networks with the same structure, the input end of each stage of the cascode amplification networks is connected with an input artificial transmission line (12), and the output end of each stage of the cascode amplification networks is connected with an output artificial transmission line (17);
each stage of the cascode amplifying network comprises a cascode amplifying unit (10), an RC (resistance-capacitance) stabilizing unit (11), a first grid voltage temperature compensation voltage division unit (13), a grid-to-ground unit (15), a second grid voltage temperature compensation voltage division unit (16), a matching capacitor and a first biasing resistor;
the cascode amplifying unit (10) comprises a common source transistor and a common gate transistor, the common source transistor and the common gate transistor in the same stage have the same size, the size of each stage of common source transistor and the size of the common gate transistor gradually decrease along the direction from signal input to signal output, the drain electrode of the common source transistor is connected with the source electrode of the common gate transistor through a peak value inductor, the source electrode of the common source transistor is grounded, the gate electrode of the common source transistor is connected with one end of a stabilizing resistor and one end of a stabilizing capacitor which are connected in parallel in an RC stabilizing unit (11), the other end of the stabilizing resistor and the other end of the stabilizing capacitor are connected to an input artificial transmission line (12) through a matching capacitor and are also connected with the output end of a first gate voltage temperature compensation voltage dividing unit (13) through a first bias resistor, and the gate electrode of the common gate transistor is connected with the output end of a gate to ground unit (15), the input end of the grid electrode to ground unit (15) is connected with the output end of the second grid electrode voltage temperature compensation voltage division unit (16), and the drain electrode of the common-grid transistor is connected with an output artificial transmission line (17).
2. The ultra-wideband gradual-change temperature compensation distributed microwave power amplification chip as claimed in claim 1, wherein the first gate voltage temperature compensation voltage division unit (13) comprises a first voltage division resistor and a second voltage division resistor, one end of the first voltage division resistor is connected to the first gate voltage, the other end of the first voltage division resistor is connected to one end of the first bias resistor and one end of the second voltage division resistor, respectively, and the other end of the second voltage division resistor is grounded;
the second grid voltage temperature compensation voltage division unit (16) comprises a third voltage division resistor and a fourth voltage division resistor, one end of the third voltage division resistor is connected with the second grid voltage, the other end of the third voltage division resistor is respectively connected with one end of the fourth voltage division resistor and the input end of the grid to ground unit (15), and the other end of the fourth voltage division resistor is grounded.
3. The ultra-wideband gradual change temperature compensation distributed microwave power amplification chip according to claim 2, wherein the first voltage division resistor and the third voltage division resistor employ TFR resistors with negative temperature coefficients, and the second voltage division resistor and the fourth voltage division resistor employ MESA resistors with positive temperature coefficients.
4. The ultra-wideband gradual change temperature compensation distributed microwave power amplification chip according to claim 2, wherein the gate-to-ground unit (15) comprises a common gate resistor, a second bias resistor and a ground capacitor, one end of the common gate resistor is connected with the gate of the common gate transistor, the other end of the common gate resistor is respectively connected with one end of the second bias resistor and one end of the ground capacitor, the other end of the second bias resistor is connected with the output end of the second gate voltage temperature compensation voltage division unit (16), and the other end of the ground capacitor is grounded.
5. The ultra-wideband gradual-change temperature compensation distributed microwave power amplification chip as claimed in claim 1, wherein the input artificial transmission line (12) comprises a plurality of input inductors connected in sequence, an input end of the first input inductor is connected with a radio frequency input, an output end of the last input inductor is connected with a gate absorption unit (14), a branch output end of the input artificial transmission line (12) is arranged between every two input inductors, and one branch output end is connected with an input end of a primary cascode amplification network;
the artificial output transmission line (17) comprises a plurality of output inductors which are sequentially connected, the input end of the first output inductor is connected with the drain electrode absorption unit (18), the output end of the last output inductor is connected with the radio frequency output, a branch input end of the artificial output transmission line (17) is arranged between every two output inductors, and the branch input end is connected with the output end of the primary cascode amplification network.
6. The ultra-wideband gradual change temperature compensation distributed microwave power amplification chip as claimed in claim 5, wherein the grid absorption unit (14) comprises a first absorption resistor and a first absorption grounding capacitor, one end of the first absorption resistor is connected with the output end of the last input inductor in the input artificial transmission line (12), the other end of the first absorption resistor is connected with one end of the first absorption grounding capacitor, and the other end of the first absorption grounding capacitor is grounded;
the drain electrode absorption unit (18) comprises a second absorption resistor and a second absorption grounding capacitor, one end of the second absorption resistor is connected with the input end of the first output inductor in the output artificial transmission line (17), the other end of the second absorption resistor is connected with one end of the second absorption grounding capacitor, and the other end of the second absorption grounding capacitor is grounded.
7. The ultra-wideband tapered temperature compensated distributed microwave power amplification chip of claim 1, wherein the cascode structure comprises an odd-numbered stage or an even-numbered stage of cascode network of not less than 1.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114553155A (en) * | 2022-04-22 | 2022-05-27 | 成都嘉纳海威科技有限责任公司 | Ultra-wideband radio frequency amplifier covering fundamental frequency |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114553155A (en) * | 2022-04-22 | 2022-05-27 | 成都嘉纳海威科技有限责任公司 | Ultra-wideband radio frequency amplifier covering fundamental frequency |
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