CN205881939U - Flip -chip COB light source - Google Patents
Flip -chip COB light source Download PDFInfo
- Publication number
- CN205881939U CN205881939U CN201620763107.6U CN201620763107U CN205881939U CN 205881939 U CN205881939 U CN 205881939U CN 201620763107 U CN201620763107 U CN 201620763107U CN 205881939 U CN205881939 U CN 205881939U
- Authority
- CN
- China
- Prior art keywords
- upside
- led wafer
- down mounting
- eutectic
- metal pad
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Led Device Packages (AREA)
Abstract
The utility model discloses be adapted to LED light source technical field, provide a flip -chip COB light source, including the base plate, set up LED wafer on the base plate, be provided with on the base plate conducting wire and with the flip -chip eutectic position that the conducting wire is connected, flip -chip eutectic position is used for welded fastening the LED wafer, flip -chip eutectic bit map top -coat on the base plate covers and has first metal pad spray layer, the LED wafer with the connection electrode surface of flip -chip eutectic position junction is provided with second metal pad spray layer, first metal pad spray layer with still be provided with solid brilliant tin cream between the second metal pad spray layer, the conducting wire of base plate with the outer cover of LED wafer has silica gel. The embodiment of the utility model provides a solid brilliant tin cream reflow soldering is passed through with the flip -chip eutectic position of LED wafer direct mount on the base plate, the circuit on LED wafer electrode and the base plate to mode through the flip -chip for the encapsulation process of LED wafer reduces, has avoided the use of gold thread simultaneously, has reduced dead lamp and flashing light trouble.
Description
Technical field
This utility model belongs to LED light source technical field, particularly relates to a kind of upside-down mounting COB light source.
Background technology
In LED illuminating industry, LED luminescence chip typically uses the mode of formal dress, formal dress refer to the electrode of chip with
Luminous zone is on the same surface of chip, and above chip, material is from top to bottom: P-GaN, luminescent layer, N-GaN, substrate.
The mode of formal dress needs to carry out welding and the encapsulation of gold thread, and operation is numerous and diverse, expends man-hour many, simultaneously because LED envelope
Dress silica gel expands after being heated, and its coefficient of expansion is different from the gold thread coefficient of expansion, and gold thread is pullled extruding meeting by silica gel when deformation
The fracture causing gold thread comes off with solder joint and forms dead lamp or flashing light fault.
Utility model content
This utility model embodiment provides a kind of upside-down mounting COB light source, it is intended to the mode solving existing formal dress needs to carry out
The welding of gold thread and encapsulation, operation is numerous and diverse, expends man-hour many, simultaneously because LED packaging silicon rubber expands after being heated, its coefficient of expansion
Different from the gold thread coefficient of expansion, gold thread is pullled extruding and the fracture of gold thread and solder joint can be caused to come off and shape by silica gel when deformation
Become dead lamp or the problem of flashing light fault.
This utility model embodiment is achieved in that a kind of upside-down mounting COB light source,
Including substrate, LED wafer on the substrate is set, wherein, described substrate is provided with conducting wire and
The upside-down mounting eutectic position being connected with described conducting wire, described upside-down mounting eutectic position is used for being welded and fixed described LED wafer；
Upside-down mounting eutectic position surface-coated on described substrate has the first metal pad spray-up, described LED wafer with described fall
The connection electrode surface of dress junction, eutectic position is provided with the second metal pad spray-up, and described first metal pad spray-up is with described
It is additionally provided with die bond solder paste between second metal pad spray-up；
It is coated with silica gel outside the conducting wire of described substrate and described LED wafer.
Further, the heat conductivity of described die bond solder paste is 40 (W/m.K)～70 (W/m.K).
Further, the upside-down mounting eutectic position of described substrate is welded with the employing backflow eutectic that is welded and fixed of described LED wafer,
Eutectic welding temperature is beyond 15 degree～25 degree of described die bond solder paste eutectic melting point, and eutectic should be 30 seconds～60 seconds weld interval.
Further, after the welding of described backflow eutectic, when described LED wafer floor space is less than 0.5mm, its bonding area
Not less than the 1/2 of LED wafer bottom surface area, when stating LED wafer floor space more than 0.5mm, its bonding area is not less than LED
The 1/3 of wafer bottom surface area.
Further, described die bond solder paste point is coated onto the upside-down mounting eutectic position of described substrate.
Further, the first metal pad spray-up material is any one material in gold, silver, nickel, stannum, described second metal
Pad spray-up material is tin material.
The upside-down mounting COB light source of this utility model embodiment, is directly installed on LED wafer on substrate by the way of upside-down mounting
Upside-down mounting eutectic position, the circuit on LED wafer electrode and substrate by the first metal pad spray-up on substrate with in LED wafer
The second metal pad spray-up and die bond solder paste reflow soldering so that the packaging process of LED wafer reduces, and avoids gold simultaneously
The use of line, decreases dead lamp and flashing light fault.
Accompanying drawing explanation
Fig. 1 is the upside-down mounting COB light source generalized section that this utility model embodiment provides；
Fig. 2 is the upside-down mounting COB light source floor map that this utility model embodiment provides.
Detailed description of the invention
In order to make the purpose of this utility model, technical scheme and advantage clearer, below in conjunction with accompanying drawing and enforcement
Example, is further elaborated to this utility model.Should be appreciated that specific embodiment described herein is only in order to explain
This utility model, is not used to limit this utility model.
It should be noted that when element is referred to as " being fixed on " or " being arranged at " another element, and it can be directly separately
On one element or may be simultaneously present centering elements.When an element is known as " being connected to " another element, and it can
To be directly to another element or to may be simultaneously present centering elements.
Also, it should be noted the orientation term such as left and right, upper and lower in this utility model embodiment, it is only the most relative
Concept or with the normal operating condition of product as reference, and should not be regarded as restrictive.
With reference to shown in Fig. 1 and Fig. 2, a kind of upside-down mounting COB light source that this utility model embodiment provides,
Including substrate 1, LED wafer 2 on the substrate is set, wherein, described substrate 1 is provided with conducting wire
11 and the upside-down mounting eutectic position 12 that is connected with described conducting wire 11, described upside-down mounting eutectic position 12 is used for being welded and fixed described LED
Wafer 2；
Upside-down mounting eutectic position 12 surface-coated on described substrate has the first metal pad spray-up 13, described LED wafer 2 and institute
Connection electrode 21 surface configuration stating junction, upside-down mounting eutectic position 12 has the second metal pad spray-up 22, described first metal pad
It is additionally provided with die bond solder paste 3 between spray-up 13 and described second metal pad spray-up 22；
The conducting wire 11 of described substrate 1 is coated with silica gel 4 outside described LED wafer 2；
Owing to using the packaged type of LED wafer upside-down mounting, directly LED wafer is fixed on substrate, it is not necessary to carry out gold
The heat radiation of the laying of line and welding, beneficially LED wafer, saves man-hour and cost, avoid in existing product simultaneously gold thread with
The thermal coefficient of expansion of packaging silicon rubber is different, and the insecure phenomenons of product quality such as the dead lamp of the product caused, flashing light, improve
The service life of product.
In this utility model embodiment, the heat conductivity of described die bond solder paste is 40 (W/m.K)～70 (W/m.K), than
General elargol heat conductivity is high, is beneficial to the conduction of LED wafer heat, it is ensured that the stability of LED product.
In this utility model embodiment, the upside-down mounting eutectic position of described substrate is welded and fixed employing with described LED wafer
Backflow eutectic welding, eutectic welding temperature is beyond 15 degree～25 degree of described die bond solder paste eutectic melting point, and eutectic weld interval should
It it is 30 seconds～60 seconds so that cavity, welding position is less than 8%, it is ensured that welding quality.
In this utility model embodiment, after the welding of described backflow eutectic, when described LED wafer floor space is less than 0.5mm
Time, its bonding area is not less than the 1/2 of LED wafer bottom surface area, when stating LED wafer floor space more than 0.5mm, and its welding
Area, not less than the 1/3 of LED wafer bottom surface area, dispels the heat when the control of bonding area is to ensure LED work normally.
In this utility model embodiment, described die bond solder paste point is coated onto the upside-down mounting eutectic position of described substrate, die bond solder paste
Forming short circuit for the company's of preventing stannum during spot printing, should meet bottom and be stained with tin cream completely, at electrode gap, tin cream can not be horizontal simultaneously
Emitting paste volume 20 μm, wafer surrounding cream amount can not exceed the 1/3 of wafer height.
As an embodiment of the present utility model, the first metal pad spray-up material is arbitrary in gold, silver, nickel, stannum
Planting material, described second metal pad spray-up material is tin material.
The concrete packaging technology of upside-down mounting COB light source of this utility model embodiment is:
A) select suitable LED flipped light emitting wafer, and LED wafer is directly installed on substrate (PCB)
Upside-down mounting eutectic position；
B) PCB of mounted LED wafer is carried out reflow soldering；
C) LED after die bond is detected；
D) PCB is carried out silica gel packaging；
E) photochromic test is carried out.
The present embodiment can reflow soldering under vacuum environment or inert gas shielding environment or natural conditions, for anti-non-return
During stream, chip electrode solder comes off because of long-time high-temperature fusion, and Peak temperature during upside-down mounting exceeds the 15 of reflux solder
DEG C～25 DEG C be advisable, simultaneously want timing each section of temperature is detected.
The upside-down mounting COB light source that this utility model embodiment provides, is directly installed on base by LED wafer by the way of upside-down mounting
Upside-down mounting eutectic position on plate, LED wafer electrode and the circuit on substrate are brilliant with LED by the first metal pad spray-up on substrate
The second metal pad spray-up on sheet and die bond solder paste reflow soldering, simplify the manufacturing process of LED, reduce LED
The manufacturing cost of product so that the manufacturing cycle of LED is greatly shortened, without the need for using gold thread, decreases dead lamp and sudden strain of a muscle
Lamp phenomenon, greatly improves the service life of LED product.
The foregoing is only preferred embodiment of the present utility model, not in order to limit this utility model, all at this
Any amendment, equivalent and the improvement etc. made within the spirit of utility model and principle, should be included in this utility model
Protection domain within.
Claims (6)
1. a upside-down mounting COB light source, including substrate, arranges LED wafer on the substrate, it is characterised in that described substrate
On be provided with conducting wire and the upside-down mounting eutectic position being connected with described conducting wire, described upside-down mounting eutectic position is used for welding solid
Fixed described LED wafer；
Upside-down mounting eutectic position surface-coated on described substrate has the first metal pad spray-up, and described LED wafer is with described upside-down mounting altogether
The connection electrode surface of brilliant junction, position is provided with the second metal pad spray-up, described first metal pad spray-up and described second
It is additionally provided with die bond solder paste between metal pad spray-up；
It is coated with silica gel outside the conducting wire of described substrate and described LED wafer.
Upside-down mounting COB light source the most according to claim 1, it is characterised in that the heat conductivity of described die bond solder paste is 40 (W/
～70 (W/m.K) m.K).
Upside-down mounting COB light source the most according to claim 2, it is characterised in that the upside-down mounting eutectic position of described substrate and described LED
The employing backflow eutectic that is welded and fixed of wafer welds, and eutectic welding temperature is beyond 15 degree～25 of described die bond solder paste eutectic melting point
Degree, eutectic should be 30 seconds～60 seconds weld interval.
Upside-down mounting COB light source the most according to claim 3, it is characterised in that after the welding of described backflow eutectic, as described LED
When wafer floor space is less than 0.5mm, its bonding area is not less than the 1/2 of LED wafer bottom surface area, when stating LED wafer bottom surface
When amassing more than 0.5mm, its bonding area is not less than the 1/3 of LED wafer bottom surface area.
Upside-down mounting COB light source the most according to claim 1, it is characterised in that described die bond solder paste point is coated onto described substrate
Upside-down mounting eutectic position.
Upside-down mounting COB light source the most according to claim 1, it is characterised in that the first metal pad spray-up material be gold, silver,
Any one material in nickel, stannum, described second metal pad spray-up material is tin material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620763107.6U CN205881939U (en) | 2016-07-19 | 2016-07-19 | Flip -chip COB light source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620763107.6U CN205881939U (en) | 2016-07-19 | 2016-07-19 | Flip -chip COB light source |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205881939U true CN205881939U (en) | 2017-01-11 |
Family
ID=57697035
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620763107.6U Expired - Fee Related CN205881939U (en) | 2016-07-19 | 2016-07-19 | Flip -chip COB light source |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205881939U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106935695A (en) * | 2017-05-17 | 2017-07-07 | 广东工业大学 | A kind of uv-LED device |
-
2016
- 2016-07-19 CN CN201620763107.6U patent/CN205881939U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106935695A (en) * | 2017-05-17 | 2017-07-07 | 广东工业大学 | A kind of uv-LED device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170111 |