CN203658692U - Lithium niobate light modulator - Google Patents
Lithium niobate light modulator Download PDFInfo
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- CN203658692U CN203658692U CN201320754966.5U CN201320754966U CN203658692U CN 203658692 U CN203658692 U CN 203658692U CN 201320754966 U CN201320754966 U CN 201320754966U CN 203658692 U CN203658692 U CN 203658692U
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- lithium niobate
- amorphous silicon
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Abstract
Disclosed is a lithium niobate light modulator. Amorphous silicon is used for preparing a waveguide structure on a lithium niobate substrate, the waveguide size can be effectively reduced through the high refraction index of the amorphous silicon, and therefore the interval between metal electrodes is reduced, and further the needed modulation voltage is low. Preferably, hydrogenated amorphous silicon is used for manufacturing a waveguide chip, and the existence of Si:H looping can reduce optical loss. The photoelectric effect of an element can be maximized by adjusting the thickness of the hydrogenated amorphous silicon on the premise of guaranteeing the waveguide size. Good radio frequency matching can be guaranteed by controlling the thickness of silicon dioxide and the thickness of the metal electrodes, and an optical fiber interface connected with the outside can be achieved through waveguide lines penetrating through a waveguide layer. Due to the fact that the waveguide lines are all at the waveguide layer, an enough metal area for packaging or testing can be reserved. A perfect packaging process can lower the probability of occurrence of the phenomenon of electricity leakage, the short circuit phenomenon caused by a humid environment is avoided, and the adaptive capacity of the lithium niobate light modulator to the environment is improved to some extent.
Description
Technical field
The utility model relates to a kind of fiber-optic communications traffic communications field, specifically a kind of lithium niobate optical modulator.
Background technology
The main function of photomodulator is insignificant continuous light wave to convert to the light signal of high-frequency load effective information.Due to the high photoelectric effect of lithium niobate material, lithium niobate optical modulator has become most popular photomodulator in existing system.The chief component of lithium niobate optical modulator is lithium niobate waveguide chip, lithium niobate waveguide chip is carried out to certain packaging technology and just can obtain lithium niobate optical modulator.
Existing lithium niobate waveguide chip is to be mainly prepared from by the mode such as titanium doped, but because contrast of refractive index is not high, the waveguide dimensions of lithium niobate waveguide chip is generally larger.This just causes the electrode separation of lithium niobate optical modulator larger, thereby just needs higher voltage to guarantee that enough modulation drive field intensity, or realizes enough modulator phase place variations by increasing the length of modulation areas.Adopt any mode all can strengthen to a certain extent the difficulty of industry preparation, also caused the waste of resource.
In prior art, also someone proposes to use the silicon nitride material of high silicon amount to be added in the technical scheme of improving the larger-size deficiency of waveguide chip in titanium doped lithium niobate waveguide, and then improves the size of lithium niobate optical modulator.If the patent No. is " CN101620296A ", patent name is " high confinement waveguide on a kind of photoelectricity substrate ".Although this waveguide utilizes the high refraction contrast degree of silicon nitride material itself to reach the effect that reduces waveguide dimensions to a certain extent, but be communicated with effect in order to obtain good light, need the silicon nitride waveguides use that combines with the two-layer waveguide of titanium doped lithium niobate waveguide, finally cause the size of whole waveguide chip in fact really not dwindled, and because the refractive index of silicon nitride is not high too many with respect to lithium niobate, so the physical size effect of optimization of this design is not fine.
In addition, existing lithium niobate optical modulator is in order to realize good radio frequency and to mate, and the signal wire of radio-frequency plumbing is often very thin.And conflict mutually with optical waveguide for fear of rf signal line, generally need double layer of metal to connect to realize and being connected of extraneous radio frequency interface.And the relevant packaging technology of existing lithium niobate optical modulator is perfect not enough, the waveguide wire of for example lithium niobate optical modulator adopts exposed metal wire to be directly connected with extraneous optical fiber interface often, even this wire electrode spacing all likely causes because of humid environment opening circuit or the phenomenon of short circuit etc. in 6 micron levels, poor to adaptive capacity to environment.
Utility model content
For this reason, technical problem to be solved in the utility model is that the size of the waveguide chip of lithium niobate optical modulator in prior art is large, preparation technology is comparatively complicated, packaging technology is comparatively simple and crude, thereby it is cheap to propose a kind of manufacturing price, waveguide chip size is little, required modulation electric is forced down, and maximizes photoelectric a kind of lithium niobate optical modulator of device.For solving the problems of the technologies described above, utility model adopts following technical scheme to realize.
A kind of lithium niobate optical modulator, comprises waveguide chip and at the protective seam of described waveguide chip upper end and the waveguide wire being connected with external fiber; At the bottom of described waveguide chip comprises lithium niobate base, and be set in turn in the suprabasil amorphous silicon layer of described lithium niobate, silicon dioxide layer and metal electrode; Wherein, the thickness of described amorphous silicon layer is less than the thickness at the bottom of described lithium niobate base, at the bottom of described lithium niobate base and described amorphous silicon layer jointly form waveguide; On described silicon dioxide layer, form electrode fill area, described metal electrode is arranged in described electrode fill area; At the bottom of described waveguide wire is arranged at described lithium niobate base and between described amorphous silicon layer.
Described amorphous silicon layer thickness is 70nm-200nm further.
Described amorphous silicon layer thickness is 70nm-150nm further.
Described silicon dioxide layer thickness is 1um-2um further.
Described amorphous silicon layer is hydrogenated amorphous silicon layer further.
Technique scheme of the present utility model has the following advantages compared to existing technology:
(1) lithium niobate optical modulator described in the utility model, use amorphous silicon to prepare waveguide chip, due to the refractive index of amorphous silicon superelevation, by the thickness optimization optical loss of rational design amorphous silicon, strengthen photoelectric effect, and then can reduce the spacing between metal electrode in lithium niobate optical modulator, and then significantly reduce to realize low voltage signal and modulate required modulation length, thereby the chip size of lithium niobate optical modulator can significantly be reduced.Whole chip only needs a waveguide just can realize and extraneous optical fiber communication simultaneously, without the gradual change conversion between multiple waveguides and waveguide and waveguide, has also reduced to a certain extent the size of waveguide chip.
(2) lithium niobate optical modulator described in the utility model, preferably uses amorphous silicon hydride to make waveguide chip, and it has comprised a large amount of Si:H chains, and the existence of its Si:H chain can reduce optical loss.
(3) lithium niobate optical modulator described in the utility model, by controlling the thickness of silicon dioxide and the thickness of metal electrode, can guarantee good radio-frequency match, and the optical fiber interface being connected with the external world is realized by the waveguide wire through ducting layer, because above-mentioned waveguide wire is all at ducting layer, can stop again the metallic region of encapsulation or test.In preparation process, cannot directly carry out probe test with respect to traditional lithium niobate optical modulator chip simultaneously or realize chip connecting, need on chip, use Twi-lithography step could realize the loaded down with trivial details step that metal connects completely, save process, simplify flow process, can obtain good economic benefit.
(4) lithium niobate optical modulator described in the utility model, by Silica-coated waveguide wire, simultaneously armor coated on waveguide chip, and on protective seam outside surface on described metal electrode, protection structure is set, further protect metal electrode.Packaging technology can reduce the probability that leaky occurs, and avoids the generation of the short circuit phenomenon causing because of humid environment, has improved to a certain extent the adaptive faculty of lithium niobate optical modulator to environment.
Accompanying drawing explanation
For content of the present utility model is more likely to be clearly understood, according to specific embodiment of the utility model also by reference to the accompanying drawings, the utility model is described in further detail, wherein below
Fig. 1 is the waveguide chip structural drawing described in a kind of embodiment of the utility model;
Fig. 2 is the lithium niobate optical modulator structural drawing described in a kind of embodiment of the utility model;
Fig. 3 is the lithium niobate optical modulator sectional view described in a kind of embodiment of the utility model;
Fig. 4 is waveguide chip described in a kind of embodiment of the utility model and the connected mode of optical fiber.
In figure, Reference numeral is expressed as: at the bottom of 1-lithium niobate base, and 12-waveguide, 2-amorphous silicon layer, 3-silicon dioxide layer, 4-metal electrode, 5-protective seam, 6-protects structure, 7-waveguide wire, 8-optical fiber.
Embodiment
Below in conjunction with accompanying drawing, the lithium niobate optical modulator described in the present embodiment is specifically addressed.As shown in Figure 1, Figure 2 and Figure 3, the lithium niobate optical modulator described in the present embodiment comprises waveguide chip and at the protective seam 5 of described waveguide chip upper end and the waveguide wire 7 being connected with external fiber; Described waveguide chip comprises at the bottom of lithium niobate base 1, and is set in turn at the bottom of described lithium niobate base amorphous silicon layer 2, silicon dioxide layer 3 and metal electrode 4 on 1; Wherein, the thickness of described amorphous silicon layer 2 is less than at the bottom of described lithium niobate base 1 thickness, at the bottom of described lithium niobate base 1 and described amorphous silicon layer 2 is common forms waveguides 12; On described silicon dioxide layer 3, form electrode fill area, described metal electrode 4 is arranged in described electrode fill area; Described waveguide wire 7 be arranged at the bottom of described lithium niobate base 1 and described amorphous silicon layer 2 between.Described protective seam 5 forms by applying protective material, and described protective material is preferably the one in silicone based glue, epoxies glue and acrylic glue.
The present embodiment selects amorphous silicon to form waveguide moulding at the bottom of lithium niobate base as high-index material.The refractive index of amorphous silicon material itself is not only higher than other general materials, also far above silicon nitride material.The refractive index of silicon nitride material is 2.2, and the refractive index of amorphous silicon has reached 3.5, and this crystal property of amorphous silicon is greatly improved the integration of waveguide.
Generally speaking the thickness of amorphous silicon is thinner, and optical mode in lithium niobate, just can maximize the photoelectric effect of device with regard to larger infiltration.If but the thickness of amorphous silicon is too thin, optical mode can expand, that just can not get restrictive stronger optical mode, can not reduce the spacing between electrode.Preferred described amorphous silicon layer 2 thickness of the present embodiment are 70nm-200nm, and more preferably described amorphous silicon layer 2 thickness are 70nm-150nm.Those skilled in the art should know, and the thickness of described amorphous silicon layer is set as getting through lot of experiment validation, can produce good technique effect.But be not the thickness for limiting amorphous silicon layer, the data variation of other enforceable thickness is also within the protection domain of the present embodiment.
A kind of lithium niobate optical modulator described in the present embodiment, use amorphous silicon to prepare waveguide chip, due to the refractive index of amorphous silicon superelevation, by the thickness optimization optical loss of rational design amorphous silicon, strengthen photoelectric effect, and then can reduce the spacing between metal electrode in lithium niobate optical modulator, and then significantly reduce to realize low voltage signal and modulate required modulation length, thereby lithium niobate optical modulator chip size can significantly be reduced.Whole chip only needs a waveguide just can realize and extraneous optical fiber communication simultaneously, without the gradual change conversion between multiple waveguides and waveguide and waveguide, has also reduced to a certain extent the size of waveguide chip.
Preferably use amorphous silicon hydride to make waveguide chip, the existence of its Si:H chain can reduce optical loss, can under the prerequisite that guarantees waveguide dimensions, maximize the photoelectric effect of device.
Because metal is close to waveguide more, it is just larger to the absorption of light, also just cannot obtain good radio-frequency match, thus metal electrode 4 can not be laid immediately in waveguide 12, and need be away from the optical mode scope of waveguide.The described metal electrode 4 of the present embodiment is laid on silicon dioxide, and described silicon dioxide layer 3 thickness are preferably 1um-2um.The thickness of described metal electrode 4 can be set according to actual needs, can be suitable with silicon dioxide layer 3 thickness, also can exceed the thickness of silicon dioxide layer 3.Fig. 4 is a kind of waveguide chip described in the present embodiment and the connected mode of optical fiber, as shown in the figure, by controlling the thickness of silicon dioxide and the thickness of metal electrode 4, can guarantee good radio-frequency match.The input/output communication of this waveguide and extraneous optical fiber is realized by waveguide wire 7 and optical fiber 8, and a kind of gradual change type waveguide generally using in silicon optical communication can expand binding height optical mode to optical fiber size to realize best optical coupled gradually.And the optical fiber 8 being connected with the external world is by realizing at the waveguide wire 7 through ducting layer, because above-mentioned waveguide wire is all at ducting layer, so can stop the metallic region of encapsulation or test.Simultaneously with respect to traditional lithium niobate optical modulator chip in preparation process because waveguide wire is thinner, cannot directly carry out probe test or realize chip connecting, and then need on chip, use Twi-lithography step could realize the loaded down with trivial details step that metal connects completely, save process, simplify flow process, can obtain good economic benefit.
Because the parcel of silicon dioxide has been enough to guarantee leakproof, can meet the demand in actual use.So encapsulation process can be used the method for packing of simple aluminum wire bonding to reduce costs, also can preferably use turning-over of chip packaging technology to encapsulate, actual industrial can be selected in implementing according to specific needs, concrete method for packing is not limited herein.By Silica-coated waveguide wire 7, simultaneously armor coated 5 on waveguide chip, and on protective seam 5 outside surfaces on described metal electrode 4, protection structure 6 is set, further protect metal electrode 4.Perfect packaging technology can reduce the probability that leaky occurs, and avoids the generation of the short circuit phenomenon causing because of humid environment, has improved to a certain extent the adaptive faculty of lithium niobate optical modulator to environment.
Obviously, above-described embodiment is only for example is clearly described, and the not restriction to embodiment.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here without also giving exhaustive to all embodiments.And among the protection domain that the apparent variation of being extended out thus or variation are still created in the utility model.
Claims (5)
1. a lithium niobate optical modulator, is characterized in that, comprises waveguide chip and at the protective seam of described waveguide chip upper end and the waveguide wire being connected with external fiber;
At the bottom of described waveguide chip comprises lithium niobate base, and be set in turn in the suprabasil amorphous silicon layer of described lithium niobate, silicon dioxide layer and metal electrode; Wherein, the thickness of described amorphous silicon layer is less than the thickness at the bottom of described lithium niobate base, at the bottom of described lithium niobate base and described amorphous silicon layer jointly form waveguide; On described silicon dioxide layer, form electrode fill area, described metal electrode is arranged in described electrode fill area;
At the bottom of described waveguide wire is arranged at described lithium niobate base and between described amorphous silicon layer.
2. lithium niobate optical modulator according to claim 1, is characterized in that, described amorphous silicon layer thickness is 70nm-200nm.
3. lithium niobate optical modulator according to claim 2, is characterized in that, described amorphous silicon layer thickness is 70nm-150nm.
4. lithium niobate optical modulator according to claim 2, is characterized in that, described silicon dioxide layer thickness is 1um-2um.
5. according to the arbitrary described lithium niobate optical modulator of claim 1-4, it is characterized in that, described amorphous silicon layer is hydrogenated amorphous silicon layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201320754966.5U CN203658692U (en) | 2013-11-25 | 2013-11-25 | Lithium niobate light modulator |
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| CN201320754966.5U CN203658692U (en) | 2013-11-25 | 2013-11-25 | Lithium niobate light modulator |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104460054A (en) * | 2013-11-25 | 2015-03-25 | 苏州矩阵光电有限公司 | Lithium niobate photomodulator and manufacturing and packaging method thereof |
| CN110573918A (en) * | 2017-02-08 | 2019-12-13 | 洛克利光子有限公司 | t-shaped arrayed waveguide grating |
| US11733461B2 (en) | 2017-07-17 | 2023-08-22 | Rockley Photonics Limited | Athermalized multi-path interference filter |
-
2013
- 2013-11-25 CN CN201320754966.5U patent/CN203658692U/en not_active Withdrawn - After Issue
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104460054A (en) * | 2013-11-25 | 2015-03-25 | 苏州矩阵光电有限公司 | Lithium niobate photomodulator and manufacturing and packaging method thereof |
| CN104460054B (en) * | 2013-11-25 | 2017-11-28 | 苏州矩阵光电有限公司 | A kind of lithium niobate optical modulator and its preparation and method for packing |
| CN110573918A (en) * | 2017-02-08 | 2019-12-13 | 洛克利光子有限公司 | t-shaped arrayed waveguide grating |
| CN110573918B (en) * | 2017-02-08 | 2021-04-16 | 洛克利光子有限公司 | T-shaped arrayed waveguide grating |
| US11119273B2 (en) | 2017-02-08 | 2021-09-14 | Rockley Photonics Limited | T-shaped arrayed waveguide grating |
| US11733461B2 (en) | 2017-07-17 | 2023-08-22 | Rockley Photonics Limited | Athermalized multi-path interference filter |
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Granted publication date: 20140618 Effective date of abandoning: 20171128 |