CN203631543U - Variable-capacitance element module - Google Patents

Variable-capacitance element module Download PDF

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Publication number
CN203631543U
CN203631543U CN201320800242.XU CN201320800242U CN203631543U CN 203631543 U CN203631543 U CN 203631543U CN 201320800242 U CN201320800242 U CN 201320800242U CN 203631543 U CN203631543 U CN 203631543U
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variable
capacitance element
substrate
output terminal
esd protection
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加藤登
植木纪行
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Murata Manufacturing Co Ltd
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Murata Manufacturing Co Ltd
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Abstract

The utility model relates to a variable-capacitance element module. A substrate is in a cuboid plate shape and comprises a first side and a second side which are opposite to each other and which are separated by a variable-capacitance element. At positions along the first side, a first substrate-side input output terminal connected with the first input output terminal of the variable-capacitance element and a second substrate-side input output terminal connected with the second input output terminal of the variable-capacitance element are configured. At positions along the second side, a substrate-side control voltage input terminal connected with the control voltage input terminal of the variable-capacitance element and a substrate-side grounding terminal connected with the grounding terminal of the variable-capacitance element are configured. A first ESD protective element is configured between the first substrate-side input output terminal and the substrate-side control voltage input terminal. A second ESD protective element is configured between the second substrate-side input output terminal and the substrate-side grounding terminal.

Description

Variable-capacitance element module
Technical field
The present invention relates to for example at RFID(Radio Frequency Identification: radio-frequency (RF) identification) the variable-capacitance element module that uses in the communicator such as system, wireless near field communication (NFC:Near Field Communication) system.
Background technology
In the past, in patent documentation 1,2 etc., propose to have and a kind ofly control by applying the variable-capacitance element that voltage changes dielectric constant.These variable-capacitance elements adopt the stepped construction (mim structure) of metal, strong dielectric material, metal, and comprise that film strong dielectric to obtain larger capacitance change under low-voltage.
Prior art document
Patent documentation
Patent documentation 1: No. 4502609 communique of Japan Patent
Patent documentation 2: No. 5000660 communique of Japan Patent
Summary of the invention
Invent technical problem to be solved
Compared with utilizing the semiconductor variable capacitor element of variable-capacitance element, varicap of MEMS and so on, there is anti-ESD(Electro-Static Discharge: static discharge in the variable-capacitance element that comprises strong dielectric film always) shortcoming that characteristic is lower.
If make the thickness attenuation of strong dielectric film, can improve and control sensitivity (capacitance variation and control the ratio of change in voltage), but along with the filming of strong dielectric film, anti-ESD characteristic can variation.,, if produce the ESD that exceedes anti-ESD characteristic, its surge acts on strong dielectric film and makes the insulation of strong dielectric film destroyed.Therefore, for the viewpoint of anti-ESD, the filming of strong dielectric film is restricted, and therefore, controls sensitivity and is also subject to its restriction.
The object of the present invention is to provide the higher variable-capacitance element module of a kind of anti-ESD characteristic.
The technical scheme that technical solution problem adopts
Variable-capacitance element module of the present invention has following structure.
(1) it is characterized in that, comprise variable-capacitance element, the first esd protection element, the second esd protection element and the common substrate of variable-capacitance element, the first esd protection element and the second esd protection element is installed,
Described variable-capacitance element comprises: strong dielectric film, and the dielectric constant of this strong dielectric film changes according to electric field; Electrode for capacitors, this electrode for capacitors clips this strong dielectric film and applies voltage; The first input and output terminal; The second input and output terminal; Control voltage input end; And earth terminal,
The first end of described the first esd protection element is connected with described the first input and output terminal, and the second end of described the first esd protection element is connected with described earth terminal,
The first end of described the second esd protection element is connected with described the second input and output terminal, and the second end of described the second esd protection element is connected with described earth terminal.
By said structure, esd protection element is connected between the input/output terminal and ground connection of variable-capacitance element, and therefore, even if the surge that ESD causes enters into the input/output terminal of variable-capacitance element from outside, surge current also can be directed into esd protection element.Therefore, do not have overvoltage and be applied to variable-capacitance element, thereby be not subject to destruction.In addition; with variable-capacitance element separated to the structure being arranged on circuit board with two esd protection elements compare, can shorten the wiring distance between variable-capacitance element and esd protection element, therefore; ESD is difficult for entering this wiring, also can obtain higher anti-ESD characteristic from this respect.
(2) be preferably described the first esd protection element and described the second esd protection arrangements of components on the symmetrical position of described variable-capacitance element.By this structure; the mechanical deformation producing with respect to the installation site of substrate at variable-capacitance element because of heat load and the mechanical deformation producing in the installation site of substrate at two esd protection elements relatives disperse symmetrically, thereby higher for the tolerances of heat load.
(3) be preferably described substrate and be that to have the cuboid of the first side relative across described variable-capacitance element and Second Edge tabular, on the position along first side, dispose the first substrate side input and output terminal being connected with the first input and output terminal of described variable-capacitance element, and the second substrate side input and output terminal being connected with the second input and output terminal of described variable-capacitance element, on the position along Second Edge, dispose substrate-side control voltage input end being connected with control voltage input end of described variable-capacitance element, and the substrate-side earth terminal being connected with the earth terminal of described variable-capacitance element,
Described the first esd protection arrangements of components is between described first substrate side input and output terminal and described substrate-side control voltage input end, and described the second esd protection arrangements of components is between described second substrate side input and output terminal and described substrate-side earth terminal.
By said structure, esd protection element can be configured in respectively near first, second input and output terminal, therefore, the length of arrangement wire of variable-capacitance element and esd protection element is shorter, and esd protection effect is better.
(4) be preferably in (3), described variable-capacitance element comprises the choking resistance being connected between described control voltage input end and the electrode for capacitors of described variable-capacitance element,
Described variable-capacitance element is that to have the cuboid of first side respect to one another and Second Edge tabular, dispose described the first input and output terminal and described the second input and output terminal along first side, dispose described control voltage input end and described earth terminal along Second Edge
Described variable-capacitance element is arranged on described substrate, and its first side is near the first side of described substrate, and Second Edge is near the Second Edge of described substrate.
By said structure, the access path of esd protection element and substrate-side earth terminal is by near control voltage input end of variable-capacitance element.Owing to being inserted with choking resistance between control voltage input end and the strong dielectric film of variable-capacitance element, therefore, even if ESD electric current flows through this access path, the decline of the protection effect that esd protection element brings is also less.
(5) be preferably in (1), described substrate is that to have the cuboid of the first side relative across described variable-capacitance element and Second Edge tabular, on the position along first side, dispose the first substrate side input and output terminal being connected with the first input and output terminal of described variable-capacitance element, and the second substrate side input and output terminal being connected with the second input and output terminal of described variable-capacitance element, on the position along Second Edge, dispose substrate-side control voltage input end being connected with control voltage input end of described variable-capacitance element, and the substrate-side earth terminal being connected with the earth terminal of described variable-capacitance element,
Described the first esd protection element, the second esd protection element form as single esd protection chip components and parts,
Described esd protection chip components and parts are configured between first substrate side input and output terminal and substrate-side earth terminal.
By said structure, the number of elements being installed on substrate is two, can make integral miniaturization.
The effect of invention
According to the present invention, can obtain a kind of higher variable-capacitance element module of higher, the anti-ESD characteristic of sensitivity of controlling.
Accompanying drawing explanation
Fig. 1 is the circuit diagram of the related variable-capacitance element module 91 of execution mode 1.
Fig. 2 is the cutaway view of the major part of variable-capacitance element 14.
Fig. 3 is the figure that represents the example of the resistive film pattern of variable-capacitance element 14.
Fig. 4 is the exploded perspective view of the major part of variable-capacitance element module 91.
Fig. 5 is the vertical view of variable-capacitance element module 91.
Fig. 6 is the cutaway view of variable-capacitance element module 91.
Fig. 7 is the exploded perspective view of the related variable-capacitance element module 92 of execution mode 2.
Fig. 8 is the cutaway view of the variable-capacitance element module 92 of execution mode 2.
Fig. 9 is the exploded perspective view of the related variable-capacitance element module 93 of execution mode 3.
Figure 10 is the exploded perspective view of the related variable-capacitance element module 94 of execution mode 4.
Figure 11 is the circuit diagram that comprises the telecommunication circuit of variable-capacitance element module.
Embodiment
" execution mode 1 "
Fig. 1 is the circuit diagram of the related variable-capacitance element module 91 of execution mode 1.This variable-capacitance element module 91 comprises variable-capacitance element 14 and two esd protection element 17A, 17B.
Variable-capacitance element 14 is determined the capacitance between first input and output terminal P1-the second input and output terminal P2 according to being applied to the control voltage of controlling between the sub-Vt of voltage input end and earth terminal GND.
Variable-capacitance element 14 comprises multiple capacity cell C1～C6 and resistance R 11～R19.Capacity cell C1～C6 is respectively the strong dielectric film being changed with electric field by dielectric constant and clips this strong dielectric film and execute the ferro-electric materials capacitor that alive electrode for capacitors forms.The amount of polarization of strong dielectric film changes according to the intensity of applied electric field, thereby apparent dielectric constant changes, and therefore, can determine capacitance by controlling voltage.Control voltage and be applied to each electrode for capacitors via RF resistive element R11～R19.The resistance value of RF resistive element R11～R19 equates.These RF resistive elements R11～R19 plays capacity cell C1～C6 to apply respectively to control the effect of voltage and play inhibition and is applied to the effect that the RF signals leakiness between terminals P 1-P2 arrives the choking resistance of controlling the sub-Vt of voltage input end and earth terminal GND.
Esd protection element 17A is connected between the first input and output terminal P1 and earth terminal GND, and esd protection element 17B is connected between the second input and output terminal P2 and earth terminal GND.Even if the surge being caused by ESD enters into input and output terminal P1, the P2 of variable-capacitance element 14 from outside, the electric current of ESD also can drop into ground connection by esd protection element 17A, 17B.Therefore, can not apply overvoltage to the capacity cell C1～C6 of variable-capacitance element 14, capacity cell C1～C6 is protected.
Fig. 2 is the cutaway view of the major part of variable-capacitance element 14.In Fig. 2, substrate SI is formed with SiO from the teeth outwards 2the Si substrate of film.On this substrate SI, be formed with successively strong dielectric film FS1, electrode for capacitors PT1, strong dielectric film FS2, electrode for capacitors PT2, strong dielectric film PS3.
Be coated with moisture-proof diaphragm PC1 on the top of the stacked film of these strong dielectric films FS1, FS2, FS3 and electrode for capacitors PT1, PT2.Top at this moisture-proof diaphragm PC1 is also formed with organic protective film PC2.
Be formed with wiring membrane TI1 on the top of organic protective film PC2.In addition, this wiring membrane TI1 is connected with the regulation position of electrode for capacitors PT1, PT2 via contact hole.And wiring membrane TI1 is formed as covering moisture-proof diaphragm PC1 and organic protective film PC2 around.
Be formed with interlayer dielectric SR1 on the surface of wiring membrane TI1.Be formed with resistive film pattern RE1 on the surface of this interlayer dielectric SR1.The surface of this resistive film pattern RE1 is covered by interlayer dielectric SR2.
Resistive film pattern RE1 utilizes thin-film technique (utilizing the technique of photoetching and etching technique) or thick-film technique (utilizing the technique of the printing technologies such as silk screen printing) to form.The resistance value of each resistive element is determined by width, length and the thickness of resistive film pattern.
Be formed with wiring membrane TI2 on the surface of interlayer dielectric SR2.In addition, this wiring membrane TI2 is connected with wiring membrane TI1 via the contact hole being formed on interlayer dielectric SR1, SR2.
There is solder resist film SR4 in the surface coverage of interlayer dielectric SR2.Then, at the opening of this solder resist film SR4 and be formed with external connecting electrode EE on the surface of wiring membrane TI2.
Described strong dielectric film FS1 is being close to use, preventing from spreading the dielectric film of use with respect to substrate SI and moisture-proof diaphragm PC1.In addition, strong dielectric film FS3 is the dielectric film of being close to use with respect to moisture-proof diaphragm PC1.The conductive material using for described electrode for capacitors PT1, PT2, can use conductivity well and dystectic precious metal material, for example Pt, the Au of excellent in oxidation resistance.
In addition the thin-film material using for described strong dielectric film FS1, FS2, FS3, can use the dielectric substance with high-k.For example, can use perovskite compound, bismuth layer-like compound etc.
In addition, wiring membrane TI1, TI2 are made up of these three layers institute of Ti/Cu/Ti.In addition, by Au/Ni, this two-layerly forms external connecting electrode EE.
Described moisture-proof diaphragm PC1 enters capacitor portion for preventing the moisture of discharging from organic protective film PC2.In addition, organic protective film PC2 absorbs from outside mechanical stress.
The resistance material of described resistive film pattern RE1 is for example nichrome.
Fig. 3 is the figure that represents the example of the resistive film pattern of variable-capacitance element 14.In Fig. 3, input and output terminal P1, P2, the sub-Vt of control voltage input end, earth terminal GND and resistive film pattern R11～R19 are corresponding with the member representing with same numeral in Fig. 1.
Fig. 4 is the exploded perspective view of the major part of variable-capacitance element module 91, and Fig. 5 is the vertical view of variable-capacitance element module 91.Circuit numbers in Fig. 4, Fig. 5 schematically illustrates the relation of circuit and each terminal.
Substrate 30 is duplexers of multiple base materials.Substrate 30 is that to have the cuboid of the first side BS1 relative across variable-capacitance element and Second Edge BS2 tabular, on the position along first side BS1, dispose the first substrate side input and output terminal EP1 being connected with the first input and output terminal P1 of variable-capacitance element 14, and the second substrate side input and output terminal EP2 being connected with the second input and output terminal P2 of variable-capacitance element 14, on the position along Second Edge BS2, dispose the sub-EVt of substrate-side control voltage input end being connected with the sub-Vt of control voltage input end of variable-capacitance element 14, and the substrate-side earth terminal EG being connected with the earth terminal GND of variable-capacitance element 14.
The first esd protection element 17A is configured between first substrate side input and output terminal EP1 and the sub-EVt of substrate-side control voltage input end, and the second esd protection element 17B configuration (installation) is between second substrate side input and output terminal EP2 and substrate-side earth terminal EG.In addition, the first esd protection element 17A and the second esd protection element 17B are configured on the position symmetrical across variable-capacitance element 14 (clipping the position of variable-capacitance element 14).
In addition, variable-capacitance element 14 is that to have the cuboid of first side CS1 respect to one another and Second Edge CS2 tabular, dispose the first input and output terminal P1 and the second input and output terminal P2 along first side CS1, dispose and control the sub-Vt of voltage input end and earth terminal GND along Second Edge CS2.And variable-capacitance element 14 is arranged on substrate 30, its first side CS1 is near the first side BS1 of substrate 30, and Second Edge CS2 is near the Second Edge BS2 of substrate 30.
Esd protection element 17A, 17B are the silicon ESD devices such as variable resistor, diode, Zener diode or the ceramic ESD device that is built-in with discharging gap in ceramic substrate.
Fig. 6 is the cutaway view of variable-capacitance element module 91.Variable-capacitance element 14 and esd protection element 17A, 17B tube core are arranged on the substrate 30 shown in Fig. 4, Fig. 5, and the terminal of these elements engages with the terminal lead on substrate, then, as shown in Figure 6, are covered by cover plate 40.Cover plate 40 is mutually bonding with the periphery of substrate 30.The base material of variable-capacitance element 14 is identical with the base material of esd protection element 17A, 17B, or coefficient of linear expansion equates in ± 40%.For example, be silicon substrate, sapphire substrate, GaAs substrate etc.Thus, be contracted in face direction and become evenly with respect to the thermal expansion of substrate 30, therefore, between variable-capacitance element and esd protection element, be difficult for producing the mechanical deformation that heat load causes, can suppress the generation in crack.In addition, substrate 30 and cover plate 40 are all formed from a resin, but are also preferably with respect to the coefficient of linear expansion of the base material of variable-capacitance element 14 and esd protection element 17A, 17B and equate in ± 40% for their coefficient of linear expansion.Thus, can suppress the warpage of substrate, guarantee flatness.
As shown in Figure 4, Figure 5, configure the first input and output terminal P1 and the second input and output terminal P2 along the first side CS1 of variable-capacitance element 14, control the sub-Vt of voltage input end and earth terminal GND along Second Edge CS2 configuration, variable-capacitance element 14 is arranged on substrate 30, its first side CS1 is near the first side BS1 of substrate 30, and Second Edge CS2, near the Second Edge BS2 of substrate 30, therefore, has the following advantages.
In Fig. 5, for example, if ESD enters from first substrate side input and output terminal EP1, as shown by arrow A, pass through lead-in wire W1 via the electric current of esd protection element 17A, as shown in figure arrow B, flow to (flowing out to) substrate-side earth terminal EG.The lead-in wire W2 being connected between the sub-Vt of control voltage input end to variable-capacitance element 14 and the sub-EVt of substrate-side control voltage input end approaches with the mode of intersecting with above-mentioned lead-in wire W1 and its.Therefore, sometimes go between W1 and W2 carry out electromagnetic field couples, because the surge current that flows through lead-in wire W1 also induces the surge current shown in arrow C in lead-in wire W2.Be applied to the sub-Vt of control voltage input end of variable-capacitance element 14 via the surge of this lead-in wire W2, but due between the strong dielectric film in terminal Vt and the variable-capacitance element 14 of this variable-capacitance element 14 and have choking resistance (with reference to the R11～R19 in Fig. 1) between strong dielectric film and earth terminal, therefore, strong dielectric film is not directly applied to high voltage, can make strong dielectric film exempt from the destruction that ESD causes.
" execution mode 2 "
Fig. 7 is the exploded perspective view of the related variable-capacitance element module 92 of execution mode 2.Circuit numbers in Fig. 7 schematically illustrates the relation of circuit and each terminal.In this execution mode 2, the mounting structure of each elements relative on substrate 30 is different from execution mode 1.Lower surface at variable-capacitance element 14 and esd protection element 17A, 17B is all formed with the salient point for carrying out flip-chip bond.And, electrode and wiring pattern for the installation that is formed with variable-capacitance element 14, esd protection element 17A, 17B on substrate 30.
Fig. 8 is the cutaway view of the variable-capacitance element module 92 of execution mode 2.Thus, variable-capacitance element 14 and esd protection element 17A, 17B flip-chip bond, on substrate 30, and utilize sealing resin 41 to seal the whole face on substrate 30.
" execution mode 3 "
Fig. 9 is the exploded perspective view of the related variable-capacitance element module 93 of execution mode 3.Circuit numbers in Fig. 9 schematically illustrates the relation of circuit and each terminal.In this execution mode 3, the mounting structure of each elements relative on substrate 30 is different from execution mode 1,2.On substrate 30, be formed with first substrate side input and output terminal EP1, second substrate side input and output terminal EP2, the sub-EVt of substrate-side control voltage input end, substrate-side earth terminal EG and wiring pattern.Variable-capacitance element 14 and esd protection element 17A, 17B tube core are arranged on substrate 30, and the terminal on terminal and the substrate of these elements carries out wire-bonded.
According to this structure, lead-in wire W1, W2 are as shown in Figure 5 such, can not produce the position that lead-in wire intersects, and therefore, manufacture and become easy.
" execution mode 4 "
Figure 10 is the exploded perspective view of the related variable-capacitance element module 94 of execution mode 4.Circuit numbers in Figure 10 schematically illustrates the relation of circuit and each terminal.In this execution mode 4, the structure that uses two esd protection elements to form as single esd protection chip components and parts.Esd protection chip components and parts 17 and variable-capacitance element 14 tube cores are arranged on substrate 30, and the terminal on terminal and the substrate of these elements carries out wire-bonded.
According to this structure, be installed to parts number on substrate less, can make whole module miniaturization.
" execution mode 5 "
Figure 11 is the circuit diagram that comprises the telecommunication circuit of variable-capacitance element module.This telecommunication circuit is an example of NFC module.Telecommunication circuit comprises RFIC11, aerial coil 13 and variable-capacitance element module 91.In Figure 11, aerial coil 13 plays the effect of radiant element, and carries out magnetic Field Coupling with communication object lateral coil antenna.
Capacitor C21, C22 are the elements for regulating the degree of coupling between RFIC11 and aerial coil 13.In addition, inductor L11, L12 and capacitor C11, C12, C20 form transmitting filter.For example, when telecommunication circuit is moved under card pattern, RFIC11 carries out passive action, therefore, from being input to the input signal generating power voltages of RX terminal, and read reception signal, in the time sending, the circuit (load) being connected with TX terminal is carried out to load-modulate.In addition, for example, when telecommunication circuit is moved under reader/writer mode, RFIC11 carries out active action, therefore, in the time sending, makes RX terminal open circuit, sends out transmitted signal from TX terminal, in the time receiving, makes TX terminal open circuit, receives signal from the input of RX terminal.RFIC11 applies control voltage via DA transducer 12 to variable-capacitance element module 91.Thus, impedance when telecommunication circuit makes to observe aerial coil 13 1 side from RFIC11 according to pattern changes.According to pattern, the capacitance of variable-capacitance element module 91 is controlled, so that the resonance frequency of antenna circuit is best (impedance matching while making to observe aerial coil one side from RFIC).
Label declaration
EP1 ... first substrate side input and output terminal
EP2 ... second substrate side input and output terminal
EVt ... substrate-side control voltage input end
FS1, FS2, FS3 ... strong dielectric film
GND ... earth terminal
P1 ... the first input and output terminal
P2 ... the second input and output terminal
PT1, PT2 ... electrode for capacitors
R11～R19 ... RF resistive element
Vt ... control voltage input end
W1, W2 ... lead-in wire
13 ... aerial coil
14 ... variable-capacitance element
17 ... esd protection chip components and parts
17A, 17B ... esd protection element
30 ... substrate
40 ... cover plate
41 ... sealing resin
91～94 ... variable-capacitance element module

Claims (5)

1. a variable-capacitance element module, is characterized in that, comprising:
Variable-capacitance element; The first esd protection element; The second esd protection element; And the common substrate of described variable-capacitance element, described the first esd protection element and described the second esd protection element is installed,
Described variable-capacitance element comprises: strong dielectric film, and the dielectric constant of this strong dielectric film changes according to electric field; Electrode for capacitors, this electrode for capacitors clips this strong dielectric film and applies voltage; The first input and output terminal; The second input and output terminal; Control voltage input end; And earth terminal,
The first end of described the first esd protection element is connected with described the first input and output terminal, and the second end of described the first esd protection element is connected with described earth terminal,
The first end of described the second esd protection element is connected with described the second input and output terminal, and the second end of described the second esd protection element is connected with described earth terminal.
2. variable-capacitance element module as claimed in claim 1, is characterized in that,
Described the first esd protection element and described the second esd protection arrangements of components are on the symmetrical position of described variable-capacitance element.
3. variable-capacitance element module as claimed in claim 2, is characterized in that,
Described substrate is that to have the cuboid of the first side relative across described variable-capacitance element and Second Edge tabular, on the position along first side, dispose the first substrate side input and output terminal being connected with the first input and output terminal of described variable-capacitance element, and the second substrate side input and output terminal being connected with the second input and output terminal of described variable-capacitance element, on the position along Second Edge, dispose substrate-side control voltage input end being connected with control voltage input end of described variable-capacitance element, and the substrate-side earth terminal being connected with the earth terminal of described variable-capacitance element,
Described the first esd protection arrangements of components is between described first substrate side input and output terminal and described substrate-side control voltage input end, and described the second esd protection arrangements of components is between described second substrate side input and output terminal and described substrate-side earth terminal.
4. variable-capacitance element module as claimed in claim 3, is characterized in that,
Described variable-capacitance element comprises the choking resistance being connected between described control voltage input end and the electrode for capacitors of described variable-capacitance element,
Described variable-capacitance element is that to have the cuboid of first side respect to one another and Second Edge tabular, dispose described the first input and output terminal and described the second input and output terminal along first side, dispose described control voltage input end and described earth terminal along Second Edge
Described variable-capacitance element is arranged on described substrate, and its first side is near the first side of described substrate, and Second Edge is near the Second Edge of described substrate.
5. variable-capacitance element module as claimed in claim 1, is characterized in that,
Described substrate is that to have the cuboid of the first side relative across described variable-capacitance element and Second Edge tabular, on the position along first side, dispose the first substrate side input and output terminal being connected with the first input and output terminal of described variable-capacitance element, and the second substrate side input and output terminal being connected with the second input and output terminal of described variable-capacitance element, on the position along Second Edge, dispose substrate-side control voltage input end being connected with control voltage input end of described variable-capacitance element, and the substrate-side earth terminal being connected with the earth terminal of described variable-capacitance element,
Described the first esd protection element, the second esd protection element form as single esd protection chip components and parts,
Described esd protection chip components and parts are configured between first substrate side input and output terminal and substrate-side earth terminal.
CN201320800242.XU 2012-12-07 2013-12-06 Variable-capacitance element module Expired - Lifetime CN203631543U (en)

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