CN202009372U

CN202009372U - Intelligent memory switch

Info

Publication number: CN202009372U
Application number: CN2011200953038U
Authority: CN
Inventors: 谢永光
Original assignee: 李炳南
Priority date: 2011-04-01
Filing date: 2011-04-01
Publication date: 2011-10-12
Anticipated expiration: 2021-04-01

Abstract

The utility model relates to an intelligent memory switch comprising a capacitance-resistance and current-limiting half-wave rectification circuit containing a resistor R1, a capacitor C1, a diode D1 and a diode D2, a DC supply filter voltage stabilizing circuit containing a capacitor C2 and a stabilivolt Z, and an intelligent memory switch circuit containing a relay coil J, a relay normally open switch K, an SCR (controlled silicon rectifier), a capacitor C3, resistors R2 and R3, and a hand-operated switch S1. One end of the relay coil J is connected with a null line N, and the other end is connected with the positive pole of the SCR; one end of the relay normally open switch K is connected with the output end X2 of a power line L, and the other end is connected with the capacitor C1 and the resistor R1; the negative pole of the SCR is connected with the resistors R2 and R3; one end of the capacitor C3 is connected with the negative pole of the capacitor C2, and the other end is connected with the resistor R2 and the trigger electrode of the SCR; one end of the resistor R2 is connected with the negative pole of the SCR and the resistor R3, and the other end is connected with the trigger electrode of the SCR and the capacitor C3; one end of the resistor R3 is connected with the null line N, and the other end is connected with the negative pole of the SCR and the resistor R2; and one end of the hand-operated switch S1 is connected with the resistors R2 and R3 and the negative pole of the SCR, and the other end is connected with the capacitor C3, the negative pole of the capacitor C2, the positive pole of the stabilivolt Z, and the positive pole of the diode D2. Compared with the prior art, by adopting the intelligent memory switch circuit, the switch has the benefit of avoiding power output of electric device loads in case of power-on after accidental power-off, so as to save power source, protect electric devices from damage, and avoid fire.

Description

The intelligent memory switch

Technical field

The utility model relates to a kind of switching device, particularly the intelligent memory switch.

Background technology

All kinds of appliance switches of selling on the existing market, the used switches of household electrical appliances such as the class of particularly throwing light on switch, plug-in strip, plug socket, electric fan, ceiling fan, hair-dryer, ventilating fan, warmer all are on-off switches, when running into unexpected the power failure, a lot of people can forget also that sometimes off switch just leaves the scene, when treating that electricity comes because switch is closed conducting, cause electrical equipment to work on and cause electric power resource waste, electric equipment damages, and perhaps also can cause the generation of fire incident.

The utility model content

In order to overcome the above-mentioned defective of prior art, the utility model provide a kind of when preventing to switch on again behind the accident power-off consuming device load do not have electricity output intelligent memory switch

The technical scheme that the utility model adopted is: the intelligent memory switch, comprise capacitance-resistance current limliting half-wave rectifying circuit, the DC power supply filter regulator circuit, capacitance-resistance current limliting half-wave rectifying circuit is by resistance R 1, capacitor C 1, diode D1 and diode D2 form, and the DC power supply filter regulator circuit is made up of capacitor C 2 and voltage-stabiliser tube Z; Also comprise an intelligent memory switching circuit, the intelligent memory switching circuit is by relay coil J, relay normally open K switch, controllable silicon SCR, capacitor C 3, resistance R 2, resistance R 3, and hand switch S1 forms; Relay coil J one end links to each other with zero line N, and the other end links to each other with controllable silicon SCR is anodal; Relay normally open K switch one end links to each other with live wire L output X2, and the other end links to each other with capacitor C 1, resistance R 1; The controllable silicon SCR negative pole links to each other with resistance R 2, resistance R 3; Capacitor C 3 one ends link to each other with capacitor C 2 negative poles, and the other end links to each other with resistance R 2, controllable silicon SCR trigger electrode; Resistance R 2 one ends link to each other with controllable silicon SCR negative pole, resistance R 3, and the other end links to each other with controllable silicon SCR trigger electrode, capacitor C 3; Resistance R 3 one ends link to each other with zero line N, and the other end links to each other with controllable silicon SCR negative pole, resistance R 2; Hand switch S1 one end links to each other with resistance R 3, resistance R 2, controllable silicon SCR negative pole, the other end and capacitor C 3, and capacitor C 2 negative poles, voltage-stabiliser tube Z positive pole, diode D2 positive pole link to each other.

Described intelligent memory switching circuit also comprises diode D3 and capacitor C 4, and diode D3 negative pole links to each other with zero line N, and positive pole links to each other with relay coil J, capacitor C 4; Capacitor C 4 one ends link to each other with zero line N, and the other end links to each other with relay coil J, diode D3 positive pole, controllable silicon SCR positive pole.

Resistance R 1 one ends of described capacitance-resistance current limliting half-wave rectifying circuit link to each other with live wire L, and the other end links to each other with capacitor C 1, diode D2 negative pole, diode D1 positive pole; Capacitor C 1 one ends link to each other with live wire L, and the other end links to each other with resistance R 1, diode D2 negative pole, diode D1 positive pole; Diode D1 negative pole links to each other with zero line N, and positive pole links to each other with diode D2 negative pole, capacitor C 1 and resistance R 1; Diode D2 positive pole links to each other with voltage-stabiliser tube Z positive pole, negative pole links to each other with diode D1 positive pole, capacitor C 1 and resistance R 1.

Capacitor C 2 one ends of described DC power supply filter regulator circuit link to each other with zero line N, and the other end links to each other with voltage-stabiliser tube Z positive pole, capacitor C 3, hand switch S1, diode D2 positive pole; Voltage-stabiliser tube Z negative pole links to each other with zero line N, and positive pole links to each other with capacitor C 2, capacitor C 3, hand switch S1, diode D2 positive pole.

Described intelligent memory switch also comprises a current limliting protective tube F, and protective tube F one end links to each other with the relay normally open K switch, and the other end links to each other with live wire L input X1.

Compared with prior art, after the utility model prevents accident power-off by the intelligent memory switching circuit, when forgetting, people close the electrical device switch that is using, leave the scene, after electricity comes, avoid employed electrical device in no personnel operation and load conducting electricity is worked voluntarily, have the conservation of power resource, prevent that electrical equipment from damaging and the advantage of fire incident generation.

Description of drawings

Fig. 1 is the circuit diagram of the utility model figure intelligent memory switch.

Embodiment

As shown in Figure 1: the intelligent memory switch comprises live wire L, zero line N, live wire L input X1, live wire L output X2, zero line N input X3, zero line N output X4, a current limliting protective tube F, capacitance-resistance current limliting half-wave rectifying circuit, DC power supply filter regulator circuit; Protective tube F one end links to each other with the relay normally open K switch, and the other end links to each other with live wire L input X1; Capacitance-resistance current limliting half-wave rectifying circuit is by resistance R 1, capacitor C 1, and diode D1 and D2 form, and the DC power supply filter regulator circuit is made up of capacitor C 2 and voltage-stabiliser tube Z; Resistance R 1 one ends of capacitance-resistance current limliting half-wave rectifying circuit link to each other with live wire L, and the other end links to each other with capacitor C 1, diode D2 negative pole, diode D1 positive pole; Capacitor C 1 one ends link to each other with live wire L, and the other end links to each other with resistance R 1, diode D2 negative pole, diode D1 positive pole; Diode D1 negative pole links to each other with zero line N, and positive pole links to each other with diode D2 negative pole, capacitor C 1 and resistance R 1; Diode D2 positive pole links to each other with voltage-stabiliser tube Z positive pole, negative pole links to each other with diode D1 positive pole, capacitor C 1 and resistance R 1.

Capacitor C 2 one ends of DC power supply filter regulator circuit link to each other with zero line N, and the other end links to each other with voltage-stabiliser tube Z positive pole, capacitor C 3, hand switch S1, diode D2 positive pole; Voltage-stabiliser tube Z negative pole links to each other with zero line N, and positive pole links to each other with capacitor C 2, capacitor C 3, hand switch S1, diode D2 positive pole.

The intelligent memory switch also comprises an intelligent memory switching circuit, and the intelligent memory switching circuit is by relay coil J, relay normally open K switch, controllable silicon SCR, capacitor C 3, resistance R 2, resistance R 3, and hand switch S1 forms; Relay coil J one end links to each other with zero line N, and the other end links to each other with controllable silicon SCR is anodal; Relay normally open K switch one end links to each other with live wire L output X2, and the other end links to each other with capacitor C 1, resistance R 1; The controllable silicon SCR negative pole links to each other with resistance R 2, resistance R 3; Capacitor C 3 one ends link to each other with capacitor C 2 negative poles, and the other end links to each other with resistance R 2, controllable silicon SCR trigger electrode; Resistance R 2 one ends link to each other with controllable silicon SCR negative pole, resistance R 3, and the other end links to each other with controllable silicon SCR trigger electrode, capacitor C 3; Resistance R 3 one ends link to each other with zero line N, and the other end links to each other with controllable silicon SCR negative pole, resistance R 2; Hand switch S1 one end links to each other with resistance R 3, resistance R 2, controllable silicon SCR negative pole, the other end and capacitor C 3, and capacitor C 2 negative poles, voltage-stabiliser tube Z positive pole, diode D2 positive pole link to each other.

As power supply when live wire L input X1, zero line N input X3 import, electric current is through current limliting protective tube F, enter the anodal and rectifier diode D2 negative pole of rectifier diode D1 by resistance R 1 and capacitor C 1, make the potential point A of diode D1 on zero line N produce positive voltage, diode D2 produces negative voltage at potential point B; Thereby make potential point A and potential point B produce the DC power supply of one group of halfwave rectifier; When not pressing hand switch S, hand switch S1 does not have conducting, and the controllable silicon SCR negative pole can not be communicated to potential point B, and relay coil J does not just have electric current to pass through, the not adhesive of relay normally open K switch, and live wire L output X2 and zero line N output X4 do not have power supply output.

When pressing hand switch S1, hand switch S1 conducting, the controllable silicon SCR negative pole is communicated to potential point B, capacitor C 3 is connected with the negative pole of controllable silicon SCR, capacitor C 3 triggers to the trigger electrode and the negative discharge of controllable silicon SCR fast, makes the controllable silicon SCR conducting, and relay coil J has electric current to pass through, relay normally open K switch closure, live wire L output X2 and zero line N output X4 have power supply output.

When prominent chance power failure, relay coil J does not have electric current to pass through, the tripping of relay normally open K switch; When the positive current of recovery incoming call afterpotential point A arrives the controllable silicon SCR negative poles by resistance R 3, the hand switch S1 that is switched on is communicated to potential point B makes it cause short circuit, resistance R 2 cannot obtain the positive current of potential point A and be defeated by capacitor C 3 chargings, make the trigger electrode and the negative pole of controllable silicon SCR not obtain C3 positive potential discharge triggering, controllable silicon SCR can conducting, relay coil J does not have electric current to pass through, the not adhesive of relay normally open K switch, and live wire L output X2 and zero line N output X4 do not have power supply output; At this moment need to press hand switch S1 and make hand switch S1 become disconnection by conducting, hand switch S1 disconnects the positive current of afterpotential point A and charges to capacitor C 3 by R2 by resistance R 3 again; Press hand switch S1 again and make hand switch S1 conducting, capacitor C 3 can be fast after overcharging triggers to the trigger electrode of controllable silicon SCR and negative discharge, make controllable silicon SCR recover conducting, relay coil J has electric current to pass through, relay normally open K switch closure, live wire L output X2 and zero line N output X4 have power supply output.

Claims

1. the intelligent memory switch comprises capacitance-resistance current limliting half-wave rectifying circuit, the DC power supply filter regulator circuit, capacitance-resistance current limliting half-wave rectifying circuit is by resistance R 1, capacitor C 1, diode D1 and diode D2 form, and the DC power supply filter regulator circuit is made up of capacitor C 2 and voltage-stabiliser tube Z; It is characterized in that also comprising an intelligent memory switching circuit, the intelligent memory switching circuit is by relay coil J, relay normally open K switch, controllable silicon SCR, capacitor C 3, resistance R 2, resistance R 3, and hand switch S1 forms; Relay coil J one end links to each other with zero line N, and the other end links to each other with controllable silicon SCR is anodal; Relay normally open K switch one end links to each other with live wire L output X2, and the other end links to each other with capacitor C 1, resistance R 1; The controllable silicon SCR negative pole links to each other with resistance R 2, resistance R 3; Capacitor C 3 one ends link to each other with capacitor C 2 negative poles, and the other end links to each other with resistance R 2, controllable silicon SCR trigger electrode; Resistance R 2 one ends link to each other with controllable silicon SCR negative pole, resistance R 3, and the other end links to each other with controllable silicon SCR trigger electrode, capacitor C 3; Resistance R 3 one ends link to each other with zero line N, and the other end links to each other with controllable silicon SCR negative pole, resistance R 2; Hand switch S1 one end links to each other with resistance R 3, resistance R 2, controllable silicon SCR negative pole, the other end and capacitor C 3, and capacitor C 2 negative poles, voltage-stabiliser tube Z positive pole, diode D2 positive pole link to each other.

2. intelligent memory switch according to claim 1 is characterized in that described intelligent memory switching circuit also comprises diode D3 and capacitor C 4, and diode D3 negative pole links to each other with zero line N, and positive pole links to each other with relay coil J, capacitor C 4; Capacitor C 4 one ends link to each other with zero line N, and the other end links to each other with relay coil J, diode D3 positive pole, controllable silicon SCR positive pole.

3. intelligent memory switch according to claim 1 is characterized in that resistance R 1 one ends of described capacitance-resistance current limliting half-wave rectifying circuit link to each other with live wire L, and the other end links to each other with capacitor C 1, diode D2 negative pole, diode D1 positive pole; Capacitor C 1 one ends link to each other with live wire L, and the other end links to each other with resistance R 1, diode D2 negative pole, diode D1 positive pole; Diode D1 negative pole links to each other with zero line N, and positive pole links to each other with diode D2 negative pole, capacitor C 1 and resistance R 1; Diode D2 positive pole links to each other with voltage-stabiliser tube Z positive pole, negative pole links to each other with diode D1 positive pole, capacitor C 1 and resistance R 1.

4. intelligent memory switch according to claim 1 is characterized in that capacitor C 2 one ends of described DC power supply filter regulator circuit link to each other with zero line N, and the other end links to each other with voltage-stabiliser tube Z positive pole, capacitor C 3, hand switch S1, diode D2 positive pole; Voltage-stabiliser tube Z negative pole links to each other with zero line N, and positive pole links to each other with capacitor C 2, capacitor C 3, hand switch S1, diode D2 positive pole.

5. intelligent memory switch according to claim 1 is characterized in that described intelligent memory switch also comprises a current limliting protective tube F, and protective tube F one end links to each other with the relay normally open K switch, and the other end links to each other with live wire L input X1.