CN1860613A - 固态图像拾取元件及其制造方法 - Google Patents
固态图像拾取元件及其制造方法 Download PDFInfo
- Publication number
- CN1860613A CN1860613A CNA2005800011039A CN200580001103A CN1860613A CN 1860613 A CN1860613 A CN 1860613A CN A2005800011039 A CNA2005800011039 A CN A2005800011039A CN 200580001103 A CN200580001103 A CN 200580001103A CN 1860613 A CN1860613 A CN 1860613A
- Authority
- CN
- China
- Prior art keywords
- image pickup
- pickup device
- state image
- electrode
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 30
- 230000002093 peripheral effect Effects 0.000 claims abstract description 48
- 239000010410 layer Substances 0.000 claims description 90
- 230000005540 biological transmission Effects 0.000 claims description 79
- 238000000034 method Methods 0.000 claims description 66
- 239000000758 substrate Substances 0.000 claims description 58
- 238000006243 chemical reaction Methods 0.000 claims description 42
- 239000004065 semiconductor Substances 0.000 claims description 31
- 230000015572 biosynthetic process Effects 0.000 claims description 30
- 238000007254 oxidation reaction Methods 0.000 claims description 18
- 230000003647 oxidation Effects 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 12
- 239000002356 single layer Substances 0.000 claims description 12
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- 238000005498 polishing Methods 0.000 claims description 6
- 238000004528 spin coating Methods 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 3
- 239000007888 film coating Substances 0.000 claims description 2
- 238000009501 film coating Methods 0.000 claims description 2
- 239000007787 solid Substances 0.000 abstract 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 32
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 27
- 229910052814 silicon oxide Inorganic materials 0.000 description 23
- 229910052710 silicon Inorganic materials 0.000 description 20
- 239000010703 silicon Substances 0.000 description 20
- 229910052581 Si3N4 Inorganic materials 0.000 description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 19
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 19
- 238000000059 patterning Methods 0.000 description 13
- 238000009826 distribution Methods 0.000 description 10
- 239000012528 membrane Substances 0.000 description 7
- 230000035945 sensitivity Effects 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 238000001259 photo etching Methods 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000004380 ashing Methods 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 210000003323 beak Anatomy 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
- H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
- H01L27/14843—Interline transfer
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP192774/2004 | 2004-06-30 | ||
JP2004192774 | 2004-06-30 | ||
JP166927/2005 | 2005-06-07 | ||
JP2005166927A JP2006049834A (ja) | 2004-06-30 | 2005-06-07 | 固体撮像素子およびその製造方法 |
PCT/JP2005/012518 WO2006004168A1 (en) | 2004-06-30 | 2005-06-30 | Solid image pick-up element and method of producing the same |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1860613A true CN1860613A (zh) | 2006-11-08 |
CN1860613B CN1860613B (zh) | 2011-10-26 |
Family
ID=35782968
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2005800011039A Expired - Fee Related CN1860613B (zh) | 2004-06-30 | 2005-06-30 | 固态图像拾取元件及其制造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7608871B2 (zh) |
EP (1) | EP1769537A4 (zh) |
JP (1) | JP2006049834A (zh) |
KR (1) | KR20060107511A (zh) |
CN (1) | CN1860613B (zh) |
WO (1) | WO2006004168A1 (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006013460A (ja) * | 2004-05-21 | 2006-01-12 | Fuji Film Microdevices Co Ltd | 固体撮像素子の製造方法および固体撮像素子 |
JP2007048894A (ja) * | 2005-08-09 | 2007-02-22 | Fujifilm Corp | 固体撮像素子およびその製造方法 |
US7803639B2 (en) * | 2007-01-04 | 2010-09-28 | International Business Machines Corporation | Method of forming vertical contacts in integrated circuits |
JP2010010478A (ja) * | 2008-06-27 | 2010-01-14 | Fujifilm Corp | 光電変換装置、光電変換装置の製造方法及び撮像装置 |
CN102874748A (zh) * | 2012-10-22 | 2013-01-16 | 上海集成电路研发中心有限公司 | 一种非晶硅平坦化方法 |
JP2018088495A (ja) * | 2016-11-29 | 2018-06-07 | キヤノン株式会社 | 半導体装置および半導体装置の製造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5241198A (en) * | 1990-11-26 | 1993-08-31 | Matsushita Electronics Corporation | Charge-coupled device and solid-state imaging device |
JP3162440B2 (ja) * | 1990-11-26 | 2001-04-25 | 松下電子工業株式会社 | 固体撮像装置の製造方法 |
JPH05182992A (ja) * | 1991-12-26 | 1993-07-23 | Mitsubishi Electric Corp | 固体撮像素子の製造方法 |
JPH1126743A (ja) | 1997-07-04 | 1999-01-29 | Matsushita Electron Corp | 固体撮像装置およびその製造方法 |
JP3319456B2 (ja) * | 2000-01-27 | 2002-09-03 | 日本電気株式会社 | 固体撮像装置及びその製造方法 |
JP2003332554A (ja) * | 2002-05-09 | 2003-11-21 | Fuji Film Microdevices Co Ltd | 固体撮像素子の製造方法 |
JP4123415B2 (ja) * | 2002-05-20 | 2008-07-23 | ソニー株式会社 | 固体撮像装置 |
JP2004055669A (ja) * | 2002-07-17 | 2004-02-19 | Fuji Film Microdevices Co Ltd | 固体撮像素子およびその製造方法 |
JP2006013460A (ja) * | 2004-05-21 | 2006-01-12 | Fuji Film Microdevices Co Ltd | 固体撮像素子の製造方法および固体撮像素子 |
-
2005
- 2005-06-07 JP JP2005166927A patent/JP2006049834A/ja not_active Abandoned
- 2005-06-30 KR KR1020067005978A patent/KR20060107511A/ko not_active Application Discontinuation
- 2005-06-30 US US10/570,130 patent/US7608871B2/en not_active Expired - Fee Related
- 2005-06-30 CN CN2005800011039A patent/CN1860613B/zh not_active Expired - Fee Related
- 2005-06-30 EP EP05758110A patent/EP1769537A4/en not_active Withdrawn
- 2005-06-30 WO PCT/JP2005/012518 patent/WO2006004168A1/en not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
EP1769537A4 (en) | 2009-07-15 |
KR20060107511A (ko) | 2006-10-13 |
EP1769537A1 (en) | 2007-04-04 |
WO2006004168A1 (en) | 2006-01-12 |
US7608871B2 (en) | 2009-10-27 |
JP2006049834A (ja) | 2006-02-16 |
CN1860613B (zh) | 2011-10-26 |
US20080217660A1 (en) | 2008-09-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: FUJI PHOTO FILM CO., LTD. Free format text: FORMER OWNER: FUJIFILM HOLDINGS CORP. Effective date: 20070622 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20070622 Address after: Tokyo, Japan Applicant after: Fuji Film Corp. Address before: Kanagawa, Japan Applicant before: Fuji Photo Film Co., Ltd. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20111026 Termination date: 20170630 |