CN1715454A - 高纯镍、由其构成的溅射靶及通过该靶形成的高纯镍薄膜 - Google Patents
高纯镍、由其构成的溅射靶及通过该靶形成的高纯镍薄膜 Download PDFInfo
- Publication number
- CN1715454A CN1715454A CNA2005100712454A CN200510071245A CN1715454A CN 1715454 A CN1715454 A CN 1715454A CN A2005100712454 A CNA2005100712454 A CN A2005100712454A CN 200510071245 A CN200510071245 A CN 200510071245A CN 1715454 A CN1715454 A CN 1715454A
- Authority
- CN
- China
- Prior art keywords
- nickel
- impurity
- weight
- ppm
- electrolysis
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25C—PROCESSES FOR THE ELECTROLYTIC PRODUCTION, RECOVERY OR REFINING OF METALS; APPARATUS THEREFOR
- C25C1/00—Electrolytic production, recovery or refining of metals by electrolysis of solutions
- C25C1/06—Electrolytic production, recovery or refining of metals by electrolysis of solutions or iron group metals, refractory metals or manganese
- C25C1/08—Electrolytic production, recovery or refining of metals by electrolysis of solutions or iron group metals, refractory metals or manganese of nickel or cobalt
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Electrochemistry (AREA)
- Electrolytic Production Of Metals (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Fe | O | C | N | S | P | F | H | |
原料 | 50 | 200 | 50 | 10 | 10 | 10 | 10 | 10 |
实施例1 | 2 | 20 | <10 | <10 | <10 | <10 | <10 | <10 |
实施例2 | 1 | <10 | <10 | <10 | <10 | <10 | <10 | <10 |
比较例1 | 50 | 60 | <10 | <10 | <10 | <10 | <10 | <10 |
Fe | Co | Cu | O | C | N | S | P | F | H | |
原料 | 30 | 20 | 10 | 150 | 40 | 10 | 10 | 10 | 10 | 10 |
实施例3 | 3 | 1 | 1 | 20 | <10 | <10 | <10 | <10 | <10 | <10 |
实施例4 | 5 | 2 | 1 | 20 | <10 | <10 | <10 | <10 | <10 | <10 |
实施例5 | 1 | 1 | 0.3 | 10 | <10 | <10 | <10 | <10 | <10 | <10 |
Claims (3)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001233036 | 2001-08-01 | ||
JP233036/2001 | 2001-08-01 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA018225411A Division CN1489642A (zh) | 2001-08-01 | 2001-10-22 | 高纯镍的制造方法、高纯镍、由该高纯镍构成的溅射靶及通过该溅射靶形成的薄膜 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN1715454A true CN1715454A (zh) | 2006-01-04 |
Family
ID=19064862
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA018225411A Pending CN1489642A (zh) | 2001-08-01 | 2001-10-22 | 高纯镍的制造方法、高纯镍、由该高纯镍构成的溅射靶及通过该溅射靶形成的薄膜 |
CNA2005100712454A Pending CN1715454A (zh) | 2001-08-01 | 2001-10-22 | 高纯镍、由其构成的溅射靶及通过该靶形成的高纯镍薄膜 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA018225411A Pending CN1489642A (zh) | 2001-08-01 | 2001-10-22 | 高纯镍的制造方法、高纯镍、由该高纯镍构成的溅射靶及通过该溅射靶形成的薄膜 |
Country Status (7)
Country | Link |
---|---|
US (2) | US7435325B2 (zh) |
EP (2) | EP2450474A1 (zh) |
JP (2) | JP3876253B2 (zh) |
KR (1) | KR100603130B1 (zh) |
CN (2) | CN1489642A (zh) |
TW (1) | TWI243215B (zh) |
WO (1) | WO2003014421A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101660123A (zh) * | 2008-08-28 | 2010-03-03 | 长沙天鹰金属材料有限公司 | 一种镍基靶材及生产工艺 |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7435325B2 (en) * | 2001-08-01 | 2008-10-14 | Nippon Mining & Metals Co., Ltd | Method for producing high purity nickle, high purity nickle, sputtering target comprising the high purity nickel, and thin film formed by using said spattering target |
JP4888752B2 (ja) * | 2001-09-17 | 2012-02-29 | 日立金属株式会社 | ニッケル材料 |
JP4376487B2 (ja) * | 2002-01-18 | 2009-12-02 | 日鉱金属株式会社 | 高純度ニッケル合金ターゲットの製造方法 |
JP3987069B2 (ja) * | 2002-09-05 | 2007-10-03 | 日鉱金属株式会社 | 高純度硫酸銅及びその製造方法 |
JP4466902B2 (ja) * | 2003-01-10 | 2010-05-26 | 日鉱金属株式会社 | ニッケル合金スパッタリングターゲット |
WO2005035809A1 (ja) * | 2003-10-07 | 2005-04-21 | Nikko Materials Co., Ltd. | 高純度Ni−V合金、同Ni−V合金からなるターゲット及び同Ni−V合金薄膜並びに高純度Ni−V合金の製造方法 |
JP4519775B2 (ja) * | 2004-01-29 | 2010-08-04 | 日鉱金属株式会社 | 超高純度銅及びその製造方法 |
KR101021488B1 (ko) * | 2004-03-01 | 2011-03-16 | Jx닛코 닛세끼 킨조쿠 가부시키가이샤 | 니켈-플라티늄 합금 및 동(同) 합금 타겟트 |
CN1276129C (zh) * | 2004-07-28 | 2006-09-20 | 金川集团有限公司 | 一种制备高纯镍的方法 |
JP5023762B2 (ja) * | 2006-03-30 | 2012-09-12 | Tdk株式会社 | 薄膜キャパシタおよびその製造方法 |
CN101063210B (zh) * | 2006-04-25 | 2010-05-26 | 襄樊化通化工有限责任公司 | 以含镍废料再生为原料制造高活性镍饼工艺 |
WO2008053616A1 (fr) * | 2006-10-24 | 2008-05-08 | Nippon Mining & Metals Co., Ltd. | Procédé pour recueillir un métal de valeur à partir de fragments d'ito |
WO2008053620A1 (en) * | 2006-10-24 | 2008-05-08 | Nippon Mining & Metals Co., Ltd. | Method for collection of valuable metal from ito scrap |
WO2008053619A1 (fr) * | 2006-10-24 | 2008-05-08 | Nippon Mining & Metals Co., Ltd. | Procédé pour recueillir un métal de valeur à partir de fragments d'ito |
US8003065B2 (en) * | 2006-10-24 | 2011-08-23 | Jx Nippon Mining & Metals Corporation | Method for collection of valuable metal from ITO scrap |
KR101155359B1 (ko) * | 2006-10-24 | 2012-06-19 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | Ito 스크랩으로부터의 유가 금속의 회수 방법 |
US8685225B2 (en) * | 2007-02-16 | 2014-04-01 | Jx Nippon Mining & Metals Corporation | Method of recovering valuable metal from scrap conductive oxide |
JP4210713B2 (ja) * | 2007-02-16 | 2009-01-21 | 日鉱金属株式会社 | 導電性のある酸化物を含有するスクラップからの有価金属の回収方法 |
WO2008117649A1 (ja) * | 2007-03-27 | 2008-10-02 | Nippon Mining & Metals Co., Ltd. | 導電性のある酸化物を含有するスクラップからの有価金属の回収方法 |
JP5102317B2 (ja) * | 2008-02-12 | 2012-12-19 | Jx日鉱日石金属株式会社 | Izoスクラップからの有価金属の回収方法 |
CN101946027B (zh) * | 2008-02-12 | 2012-01-11 | Jx日矿日石金属株式会社 | 从izo废料中回收有价值金属的方法 |
US8308934B2 (en) * | 2008-03-06 | 2012-11-13 | Jx Nippon Mining & Metals Corporation | Method of recovering valuable metals from IZO scrap |
WO2010038641A1 (ja) * | 2008-09-30 | 2010-04-08 | 日鉱金属株式会社 | 高純度銅及び電解による高純度銅の製造方法 |
US9441289B2 (en) * | 2008-09-30 | 2016-09-13 | Jx Nippon Mining & Metals Corporation | High-purity copper or high-purity copper alloy sputtering target, process for manufacturing the sputtering target, and high-purity copper or high-purity copper alloy sputtered film |
US8460535B2 (en) * | 2009-04-30 | 2013-06-11 | Infinium, Inc. | Primary production of elements |
US8492891B2 (en) * | 2010-04-22 | 2013-07-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cu pillar bump with electrolytic metal sidewall protection |
KR101397743B1 (ko) * | 2010-09-24 | 2014-05-20 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | 고순도 니켈의 제조 방법 |
KR101623629B1 (ko) * | 2011-03-07 | 2016-05-23 | 제이엑스 킨조쿠 가부시키가이샤 | 구리 또는 구리 합금, 본딩 와이어, 구리의 제조 방법, 구리 합금의 제조 방법 및 본딩 와이어의 제조 방법 |
KR101364650B1 (ko) * | 2012-10-09 | 2014-02-19 | 한국과학기술연구원 | 전기분해를 이용한 니켈의 회수방법 |
CN103726069A (zh) * | 2012-10-13 | 2014-04-16 | 江西江锂科技有限公司 | 一种新型电解镍的生产方法 |
CN103046076B (zh) * | 2012-12-26 | 2016-06-08 | 浙江华友钴业股份有限公司 | 一种电积镍的制备方法 |
CN103966627B (zh) * | 2014-04-30 | 2017-01-11 | 兰州金川新材料科技股份有限公司 | 一种降低高纯钴中杂质Fe含量的方法 |
KR101570795B1 (ko) * | 2014-12-23 | 2015-11-23 | 인천화학 주식회사 | 불소 함유 니켈 슬라임으로부터 고순도 니켈의 제조방법 |
RU168849U1 (ru) * | 2016-05-24 | 2017-02-21 | Открытое акционерное общество "Тамбовское опытно-конструкторское технологическое бюро" (ОАО "Тамбовское ОКТБ") | Анодная ячейка для электровыделения цветных металлов из водных растворов |
CN111663153B (zh) * | 2020-05-20 | 2022-03-15 | 金川集团股份有限公司 | 一种镍电解过程中抑制杂质铅、锌在阴极析出的方法 |
CN111705334B (zh) * | 2020-05-27 | 2022-04-08 | 金川集团股份有限公司 | 一种提高纯硫酸盐体系下电积镍物理外观质量的方法 |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA860872A (en) | 1971-01-12 | Zubryckyj Nicolas | Production of super-purity nickel powder | |
JPS314904B1 (zh) * | 1954-05-12 | 1956-06-23 | ||
FR1384780A (fr) * | 1963-11-27 | 1965-01-08 | Nickel Le | Procédé de raffinage électrolytique d'un alliage de nickel, en vue de l'obtention de nickel pur électrolytique |
US3446720A (en) * | 1965-01-27 | 1969-05-27 | Us Interior | Preparation of high-purity nickel and cobalt |
FR1583920A (fr) * | 1968-06-21 | 1969-12-05 | Le Nickel S.A | Procede de purification de solutions de nickel |
US3616331A (en) * | 1968-08-03 | 1971-10-26 | Int Nickel Co | Recovery of nickel and copper from sulfides |
US4053400A (en) * | 1973-09-20 | 1977-10-11 | The Metalux Corporation | Purification of nickel and cobalt electroplating solutions |
CA1064856A (en) * | 1975-02-12 | 1979-10-23 | Alexander Illis | Purification of nickel electrolyte by electrolytic oxidation |
DE3712271A1 (de) * | 1987-04-10 | 1988-10-27 | Vacuumschmelze Gmbh | Nickelbasis-lot fuer hochtemperatur-loetverbindungen |
EP0489932B1 (en) * | 1990-06-29 | 1999-02-10 | Kabushiki Kaisha Toshiba | Iron-nickel alloy |
US5192418A (en) * | 1991-07-08 | 1993-03-09 | Bethlehem Steel Corporation | Metal recovery method and system for electroplating wastes |
FR2686352B1 (fr) * | 1992-01-16 | 1995-06-16 | Framatome Sa | Appareil et procede de revetement electrolytique de nickel. |
US5569370A (en) * | 1992-04-01 | 1996-10-29 | Rmg Services Pty. Ltd. | Electrochemical system for recovery of metals from their compounds |
JPH06104120A (ja) * | 1992-08-03 | 1994-04-15 | Hitachi Metals Ltd | 磁気記録媒体用スパッタリングターゲットおよびその製造方法 |
TW271490B (zh) * | 1993-05-05 | 1996-03-01 | Varian Associates | |
US5458745A (en) * | 1995-01-23 | 1995-10-17 | Covofinish Co., Inc. | Method for removal of technetium from radio-contaminated metal |
JPH08311642A (ja) * | 1995-03-10 | 1996-11-26 | Toshiba Corp | マグネトロンスパッタリング法及びスパッタリングターゲット |
DE19609439A1 (de) * | 1995-03-14 | 1996-09-19 | Japan Energy Corp | Verfahren zum Erzeugen von hochreinem Kobalt und Sputtering-Targets aus hochreinem Kobalt |
US5964966A (en) * | 1997-09-19 | 1999-10-12 | Lockheed Martin Energy Research Corporation | Method of forming biaxially textured alloy substrates and devices thereon |
JPH11152592A (ja) * | 1997-11-18 | 1999-06-08 | Japan Energy Corp | 高純度ニッケルの製造方法及び薄膜形成用高純度ニッケル材料 |
US6086725A (en) * | 1998-04-02 | 2000-07-11 | Applied Materials, Inc. | Target for use in magnetron sputtering of nickel for forming metallization films having consistent uniformity through life |
JPH11335821A (ja) * | 1998-05-20 | 1999-12-07 | Japan Energy Corp | 磁性薄膜形成用Ni−Fe合金スパッタリングターゲット、磁性薄膜および磁性薄膜形成用Ni−Fe合金スパッタリングターゲットの製造方法 |
JP2000054040A (ja) * | 1998-08-07 | 2000-02-22 | Sumitomo Metal Mining Co Ltd | ニッケル溶液の不純物除去方法 |
JP2000219988A (ja) * | 1999-02-01 | 2000-08-08 | Japan Energy Corp | 高純度ニッケル材の製造法及び薄膜形成用高純度ニッケル材 |
US6342114B1 (en) * | 1999-03-31 | 2002-01-29 | Praxair S.T. Technology, Inc. | Nickel/vanadium sputtering target with ultra-low alpha emission |
US6190516B1 (en) * | 1999-10-06 | 2001-02-20 | Praxair S.T. Technology, Inc. | High magnetic flux sputter targets with varied magnetic permeability in selected regions |
WO2001090445A1 (fr) * | 2000-05-22 | 2001-11-29 | Nikko Materials Company, Limited | Procede de production de metal de purete superieure |
US6896776B2 (en) * | 2000-12-18 | 2005-05-24 | Applied Materials Inc. | Method and apparatus for electro-chemical processing |
US7435325B2 (en) * | 2001-08-01 | 2008-10-14 | Nippon Mining & Metals Co., Ltd | Method for producing high purity nickle, high purity nickle, sputtering target comprising the high purity nickel, and thin film formed by using said spattering target |
JP4076751B2 (ja) * | 2001-10-22 | 2008-04-16 | 日鉱金属株式会社 | 電気銅めっき方法、電気銅めっき用含リン銅アノード及びこれらを用いてめっきされたパーティクル付着の少ない半導体ウエハ |
JP4376487B2 (ja) * | 2002-01-18 | 2009-12-02 | 日鉱金属株式会社 | 高純度ニッケル合金ターゲットの製造方法 |
JP4034095B2 (ja) * | 2002-03-18 | 2008-01-16 | 日鉱金属株式会社 | 電気銅めっき方法及び電気銅めっき用含リン銅アノード |
JP4466902B2 (ja) * | 2003-01-10 | 2010-05-26 | 日鉱金属株式会社 | ニッケル合金スパッタリングターゲット |
WO2005041290A1 (ja) * | 2003-10-24 | 2005-05-06 | Nikko Materials Co., Ltd. | ニッケル合金スパッタリングターゲット及びニッケル合金薄膜 |
-
2001
- 2001-10-22 US US10/471,112 patent/US7435325B2/en not_active Expired - Fee Related
- 2001-10-22 EP EP12153485A patent/EP2450474A1/en not_active Withdrawn
- 2001-10-22 CN CNA018225411A patent/CN1489642A/zh active Pending
- 2001-10-22 CN CNA2005100712454A patent/CN1715454A/zh active Pending
- 2001-10-22 KR KR1020047001269A patent/KR100603130B1/ko active IP Right Grant
- 2001-10-22 WO PCT/JP2001/009237 patent/WO2003014421A1/ja active Application Filing
- 2001-10-22 EP EP01978844A patent/EP1413651A4/en not_active Withdrawn
- 2001-10-22 JP JP2003519547A patent/JP3876253B2/ja not_active Expired - Fee Related
-
2002
- 2002-07-15 TW TW091115671A patent/TWI243215B/zh not_active IP Right Cessation
-
2006
- 2006-07-14 JP JP2006193571A patent/JP4840808B2/ja not_active Expired - Fee Related
-
2008
- 2008-09-02 US US12/202,847 patent/US20090004498A1/en not_active Abandoned
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101660123A (zh) * | 2008-08-28 | 2010-03-03 | 长沙天鹰金属材料有限公司 | 一种镍基靶材及生产工艺 |
CN101660123B (zh) * | 2008-08-28 | 2013-08-14 | 长沙天鹰金属材料有限公司 | 一种镍基靶材及生产工艺 |
Also Published As
Publication number | Publication date |
---|---|
US7435325B2 (en) | 2008-10-14 |
JPWO2003014421A1 (ja) | 2004-11-25 |
TWI243215B (en) | 2005-11-11 |
EP1413651A4 (en) | 2006-10-25 |
WO2003014421A1 (en) | 2003-02-20 |
US20090004498A1 (en) | 2009-01-01 |
KR20040019079A (ko) | 2004-03-04 |
JP4840808B2 (ja) | 2011-12-21 |
KR100603130B1 (ko) | 2006-07-20 |
JP3876253B2 (ja) | 2007-01-31 |
US20040069652A1 (en) | 2004-04-15 |
EP1413651A1 (en) | 2004-04-28 |
JP2007046157A (ja) | 2007-02-22 |
CN1489642A (zh) | 2004-04-14 |
EP2450474A1 (en) | 2012-05-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1715454A (zh) | 高纯镍、由其构成的溅射靶及通过该靶形成的高纯镍薄膜 | |
JP4519775B2 (ja) | 超高純度銅及びその製造方法 | |
US9034075B2 (en) | Methods of manufacturing high aspect ratio silver nanowires | |
WO2001090445A1 (fr) | Procede de production de metal de purete superieure | |
CN1926254A (zh) | Ni-Pt合金和Ni-Pt合金靶 | |
CN1218071C (zh) | 用于加工金属的方法和设备以及由此生产出的金属 | |
CN1930313A (zh) | 铝生产方法 | |
CN1837411A (zh) | 一种难熔活泼金属或合金的制备方法 | |
CN1276129C (zh) | 一种制备高纯镍的方法 | |
CN1724417A (zh) | 线路板厂铜滤泥利用及处理工艺 | |
CN1272408A (zh) | 一种电镀污泥的资源化及无害化处理工艺 | |
CN1882711A (zh) | 高纯度铪、由该高纯度铪形成的靶及薄膜和高纯度铪的制造方法 | |
CN1827266A (zh) | 一种纳米镍粉的制备方法 | |
TWI252875B (en) | Method and device for producing high-purity metal | |
CN1523135A (zh) | 电解-电渗析制备氢氧化四甲基铵的方法 | |
CN109536992A (zh) | 一种两脱两积净化铜电解液的方法 | |
CN113789547A (zh) | 一种铜电解废液的净化方法 | |
JP3878402B2 (ja) | 金属の高純度化方法 | |
JP3878407B2 (ja) | 金属の高純度化方法 | |
CN1552935A (zh) | 一种镝金属合金及制备方法 | |
KR101752727B1 (ko) | 주석 폐기물로부터 주석을 회수하는 방법 | |
CN116730561A (zh) | 一种降解高盐p507萃余液废水中cod的方法 | |
CN117626368A (zh) | 利用咪唑类双氰胺根离子液体电沉积金同步再生碘的方法 | |
CN1804132A (zh) | 一种高纯锌的生产方法 | |
CN1228244C (zh) | 电渗析提纯管式热解氨连续制备纳米高纯碱式碳酸金属化合物和金属氧化物的方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: JX NIPPON MINING + METALS CO., LTD. Free format text: FORMER OWNER: NIPPON MINING + METALS CO., LTD. Effective date: 20110104 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20110104 Address after: Tokyo, Japan, Japan Applicant after: JX Nippon Mining & Metals Co., Ltd. Address before: Tokyo, Japan Applicant before: Nippon Mining & Metals Co., Ltd. |
|
C12 | Rejection of a patent application after its publication | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20060104 |