CN119698928A - Antenna device and plasma processing device - Google Patents
Antenna device and plasma processing device Download PDFInfo
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- CN119698928A CN119698928A CN202380059547.6A CN202380059547A CN119698928A CN 119698928 A CN119698928 A CN 119698928A CN 202380059547 A CN202380059547 A CN 202380059547A CN 119698928 A CN119698928 A CN 119698928A
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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Abstract
一种天线装置10，用于使高频电流流动而产生等离子体P，其包括：呈直线状的天线3；呈直管状的绝缘罩4，覆盖天线3的外侧周面3c；以及突出绝缘部5，设置在天线3的轴向两端部3a、3b之间，向比天线3的外侧周面3c更靠绝缘罩4的内侧周面4a侧突出，并且包含绝缘材料。
An antenna device 10, for causing a high-frequency current to flow and generate plasma P, comprises: a linear antenna 3; a straight tubular insulating cover 4 covering an outer peripheral surface 3c of the antenna 3; and a protruding insulating portion 5, which is arranged between the two axial end portions 3a and 3b of the antenna 3, protruding toward an inner peripheral surface 4a of the insulating cover 4 closer to the outer peripheral surface 3c of the antenna 3, and comprising an insulating material.
Description
Technical Field
The present invention relates to an antenna device for generating inductively coupled plasma by flowing a high-frequency current, and a plasma processing apparatus including the antenna device.
Background
Conventionally, there has been proposed a plasma processing apparatus that generates an inductively coupled plasma (ICP (inductively coupled plasma)) by flowing a high-frequency current through an antenna and generating an induced electric field by the high-frequency current, and performs a process on a substrate using the inductively coupled plasma.
In such a plasma processing apparatus, an antenna apparatus including a linear antenna and an insulating cover covering the antenna is proposed. Further, if the antenna is extended to cope with a large substrate or the like, the antenna may be bent, and therefore, a nut having an outer diameter larger than the outer diameter of the antenna is externally fitted to the antenna. Thus, even if the antenna is deflected, the antenna can be prevented from contacting the insulating cover by the nut.
Prior art literature
Patent literature
Patent document 1 Japanese patent laid-open publication No. 2019-160593
Disclosure of Invention
Problems to be solved by the invention
However, in the case of performing plasma treatment using such an antenna device, the outer diameter of the nut is larger than that of the antenna, and thus the electric field is concentrated at the protruding portion of the nut. As a result, when the plasma treatment is performed, ions in the plasma collide with the insulating cover near the protruding portion of the nut, and the insulating cover may be etched and damaged.
Accordingly, the present invention has been made to solve the above-mentioned problems, and an object of the present invention is to prevent damage to an insulating cover even when plasma treatment is performed by extending an antenna.
Technical means for solving the problems
Specifically, the antenna device according to the present invention is for generating plasma by flowing a high-frequency current, and is characterized by comprising a linear antenna, a straight tubular insulating cover covering the outer peripheral surface of the antenna, and a protruding insulating portion provided between both axial end portions of the antenna, protruding further toward the inner peripheral surface side of the insulating cover than the outer peripheral surface of the antenna, and comprising an insulating material.
With this structure, the electric field is not concentrated on the protruding insulating portion, and therefore ions in the plasma do not collide with the insulating cover near the protruding insulating portion, and the insulating cover can be prevented from being damaged by etching.
In addition, even in the case where the antenna or the insulating cover is deflected, contact of the antenna with the insulating cover can be avoided by protruding the insulating portion.
If the antenna is lengthened, deflection is likely to occur. In particular, as a specific embodiment of the antenna which is likely to be deflected, an inductance-capacitance (Inductance Capacitance, LC) antenna is exemplified, which further includes at least two conductor members, an insulating member provided between the conductor members adjacent to each other to insulate the conductor members, and a capacitor element electrically connected in series with the conductor members adjacent to each other.
With this structure, even in the LC antenna in which deflection is likely to occur, contact between the antenna and the insulating cover can be avoided by protruding the insulating portion.
Further, since the capacitive element is electrically connected in series with the pair of conductor members, the resultant reactance of the antenna can be a form in which the capacitive reactance is subtracted from the inductive reactance. As a result, the impedance of the antenna can be reduced, and even when the antenna is lengthened, an increase in the impedance can be suppressed, and a high-frequency current can easily flow through the antenna, so that a plasma with good uniformity can be efficiently generated.
In the antenna device, a housing recess is preferably formed in an outer peripheral surface of the antenna, and the housing recess houses an insulator constituting the protruding insulating portion.
With this structure, the protruding insulating portion is provided in the accommodating recess, and therefore movement of the protruding insulating portion in the axial direction is restricted in the accommodating recess. Therefore, by providing the accommodating recess portion at a portion where the antenna is easily bent, contact between the antenna and the insulating cover can be further avoided.
Since the antenna is likely to be bent at the connection portion between the conductor member and the insulating member, the antenna device preferably has the receiving recess formed between the axial end surface of the conductor member and the axial end surface of the insulating member.
With this structure, since the protruding insulating portion is provided at a portion where deflection is likely to occur, contact between the antenna and the insulating cover can be further avoided.
In the antenna device, the receiving recess is preferably formed in an outer peripheral surface of the conductor member.
With this structure, since the protruding insulating portion is provided away from the insulating member, contact between the protruding insulating portion and the insulating member in the axial direction can be prevented, and the temperature influence of the protruding insulating portion on the insulating member can be suppressed. As a result, a temperature difference can be prevented from occurring between the insulating members, and therefore breakage of the insulating members can be prevented.
The plasma processing apparatus according to the present invention includes the antenna, a vacuum chamber in which the antenna is disposed, and a high-frequency power supply for applying a high-frequency current to the antenna.
In the plasma processing apparatus having such a configuration, since the insulating cover is prevented from being damaged as described above, the quality such as the film thickness can be ensured, and the reliability can be improved.
ADVANTAGEOUS EFFECTS OF INVENTION
According to the present invention thus constituted, even when the antenna is extended and plasma treatment is performed, damage to the insulating cover can be prevented.
Drawings
Fig. 1 is a longitudinal sectional view schematically showing the structure of a plasma processing apparatus according to the present embodiment.
Fig. 2 is an enlarged cross-sectional view schematically showing the peripheral structure of the antenna device according to the embodiment.
Fig. 3 is an enlarged cross-sectional view schematically showing the peripheral structure of the protruding insulating portion of the embodiment.
Fig. 4 is a sectional view taken along line A-A in the peripheral structure of the protruding insulating portion of the embodiment.
Fig. 5 is an enlarged cross-sectional view schematically showing the peripheral structure of the protruding insulating portion according to the modified embodiment.
Fig. 6 is a sectional view taken along line A-A of the peripheral structure of the protruding insulating portion according to the modified embodiment.
Fig. 7 is an enlarged cross-sectional view schematically showing the peripheral structure of the protruding insulating portion according to the modified embodiment.
Detailed Description
An embodiment of a plasma processing apparatus according to the present invention will be described below with reference to the drawings. In addition, any of the drawings shown below may be schematically and appropriately omitted or exaggerated for ease of understanding. The same reference numerals are given to the same constituent members, and description thereof is omitted as appropriate.
< Device Structure >
The plasma processing apparatus 100 according to the present embodiment performs a process on a substrate W using an inductively coupled plasma P. Here, the substrate W is, for example, a substrate for a flat panel display (FLAT PANEL DISPLAY, FPD) such as a liquid crystal display or an organic Electroluminescence (EL) display, a flexible substrate for a flexible display, or the like. The processing performed on the substrate W is, for example, film formation, etching, ashing, sputtering, or the like by a plasma chemical vapor deposition (Chemical Vapor Deposition, CVD) method.
The plasma processing apparatus 100 is also called a plasma CVD apparatus when a film is formed by a plasma CVD method, a plasma etching apparatus when etching is performed, a plasma ashing apparatus when ashing is performed, and a plasma sputtering apparatus when sputtering is performed.
Specifically, as shown in fig. 1, the plasma processing apparatus 100 includes a vacuum chamber 2 into which a gas G is introduced while being evacuated, a linear antenna 3 disposed in the vacuum chamber 2, an insulating cover 4 having a straight tubular shape, a protruding insulating portion 5 including an insulating material, and a high-frequency power supply 6 for applying a high frequency for generating an inductively coupled plasma P in the vacuum chamber 2 to the antenna 3. Further, by applying a high frequency from the high frequency power supply 6 to the antenna 3 and flowing a high frequency current IR through the antenna 3, an induced electric field is generated in the vacuum chamber 2, thereby generating an inductively coupled plasma P. In the present embodiment, the antenna device 10 is constituted by the antenna 3, the insulating cover 4, and the protruding insulating portion 5.
The vacuum vessel 2 is, for example, a metal vessel, and the inside thereof is evacuated by a vacuum evacuation device 7. In the example described, the vacuum vessel 2 is electrically grounded.
For example, the gas G is introduced into the vacuum chamber 2 through a flow regulator (not shown) and a plurality of gas introduction ports 21 formed in the side wall of the vacuum chamber 2. The gas G may be a gas corresponding to the processing contents to be performed on the substrate W. For example, when film formation is performed on the substrate W by the plasma CVD method, the gas G is a source gas or a gas obtained by diluting the source gas with a diluent gas (for example, H 2). More specifically, when the source gas is SiH 4, a Si film may be formed on the substrate W, when the source gas is SiH 4+NH3, a SiN film may be formed on the substrate W, when the source gas is SiH 4+O2, a SiO 2 film may be formed on the substrate W, and when the source gas is SiF 4+N2, a SiN: F film (fluorinated silicon nitride film) may be formed on the substrate W.
In addition, a substrate holder 8 for holding the substrate W is provided in the vacuum chamber 2. As in the example described, a bias voltage may be applied to the substrate holder 8 from the bias power supply 9. The bias voltage is, for example, a negative dc voltage, a negative pulse voltage, or the like, but is not limited thereto. By such bias voltage, for example, the energy of the plasma P when normal ions are incident on the substrate W can be controlled, and the crystallinity of the film formed on the surface of the substrate W can be controlled. A heater 81 for heating the substrate W may be provided in the substrate holder 8.
The antenna 3 is disposed above the substrate W in the vacuum chamber 2 so as to be along the surface of the substrate W (e.g., substantially parallel to the surface of the substrate W). The number of antennas 3 disposed in the vacuum chamber 2 may be one or a plurality.
The vicinities of both end portions of the antenna 3 penetrate through opposite side walls of the vacuum vessel 2, respectively. Insulating members 11 are provided at portions penetrating both end portions of the antenna 3 to the outside of the vacuum chamber 2. The two ends of the antenna 3 pass through the insulating members 11, and the pass-through portions are vacuum-sealed by a filler 12, for example. The space between each insulating member 11 and the vacuum vessel 2 is also vacuum-sealed by, for example, a filler 13. The material of the insulating member 11 is, for example, ceramics such as alumina, quartz, engineering plastics such as polyphenylene sulfide (polyphenylene sulfide, PPS), polyether ether ketone (polyether ether ketone, PEEK), or the like.
Further, in the antenna 3, a portion located inside the vacuum vessel 2 is covered with a straight tubular insulating cover 4. Both end portions of the insulating cover 4 are supported by insulating members 11. Further, the space between the insulating cover 4 and the insulating member 11 may not be sealed. The reason for this is that even if the gas G enters the space inside the insulating cover 4, the plasma P is not generated in the space because the space is small and the moving distance of electrons is short. The material of the insulating cover 4 is, for example, quartz, alumina, fluorine resin, silicon nitride, silicon carbide, silicon, or the like.
By providing the insulating cover 4, the charged particles in the plasma P are prevented from entering the metal tube 31 constituting the antenna 3, so that the rise of the plasma potential caused by the charged particles (mainly electrons) entering the metal tube 31 can be prevented, and the metal tube 31 can be prevented from being sputtered by the charged particles (mainly ions) to cause metal contamination (metal contamination) on the plasma P and the substrate W.
The high-frequency power supply 6 is connected to the power supply end portion 3a, which is one end portion of the antenna 3, via the matching circuit 41, and the terminal portion 3b, which is the other end portion, is directly grounded. The power supply end portion 3a may be connected to the high-frequency power supply 6 via a capacitor, a coil, or the like, and the terminal portion 3b may be grounded via a capacitor, a coil, or the like.
According to the above configuration, the high-frequency current IR can be made to flow from the high-frequency power supply 6 to the antenna 3 via the matching circuit 41. The frequency of the high-frequency current IR is, for example, generally 13.56 MHz, but not limited thereto.
The antenna 3 is a hollow antenna having a flow path through which the cooling liquid CL flows. The cooling liquid CL flows through the antenna 3 via a circulation flow path 14 provided outside the vacuum container 2, and a temperature adjusting means 141 such as a heat exchanger and a circulation means 142 such as a pump are provided in the circulation flow path 14, wherein the temperature adjusting means 141 is used for adjusting the cooling liquid CL to a constant temperature, and the circulation means 142 is used for circulating the cooling liquid CL in the circulation flow path 14. The cooling liquid CL is preferably water having a high electric resistance, for example, pure water or water close thereto, from the viewpoint of electrical insulation. For example, a liquid cooling medium other than water such as a fluorine-based inert liquid may be used.
Specifically, as shown in fig. 2, the antenna 3 includes at least two tubular metal conductor members 31 (hereinafter referred to as "metal tubes 31"), tubular insulating members 32 (hereinafter referred to as "insulating tubes 32") provided between the metal tubes 31 adjacent to each other to insulate the metal tubes 31, and capacitors 33 as capacitive elements electrically connected in series with the metal tubes 31 adjacent to each other.
In the present embodiment, the number of metal pipes 31 is two, and the number of insulating pipes 32 and capacitors 33 is one. In the following description, one of the metal pipes 31 is referred to as a "first metal pipe 31A", and the other metal pipe is referred to as a "second metal pipe 31B". Further, the antenna 3 may have a structure having three or more metal pipes 31, in which case the number of the insulating pipes 32 and the capacitors 33 is one less than the number of the metal pipes 31.
The metal pipe 31 is a straight pipe-shaped metal pipe in which a linear flow path 31x through which the coolant CL flows is formed. The metal tube 31 is made of copper, aluminum, an alloy thereof, stainless steel, or the like, for example.
Further, a male screw portion 31a is formed at an outer peripheral portion of at least one end portion of the metal pipe 31 in the longitudinal direction. In order to realize common use with the components of the structure connecting the plurality of metal pipes 31, it is desirable to form the male screw portions 31a at both longitudinal end portions of the metal pipes 31 so as to be interchangeable.
The insulating tube 32 is a straight tube-shaped insulating tube in which a linear flow path 32x through which the cooling liquid CL flows is formed. The insulating tube 32 is made of, for example, alumina, a fluororesin, polyethylene (PE), engineering plastic (for example, polyphenylene sulfide (PPS), polyether ether ketone (PEEK), or the like).
Further, a female screw portion 32a screwed and connected to the male screw portion 31a of the metal pipe 31 is formed on the inner peripheral surface of the insulating pipe 32. Further, on the inner wall of the insulating tube 32, a recess 32B is formed on the axially central side of each female screw portion 32a so as to extend over the entire circumferential direction, and the recess 32B is fitted with a pair of electrodes 33A and 33B constituting the capacitor 33. The insulating tube 32 of the present embodiment is formed of a single member, but may be formed by joining a plurality of members.
The capacitor 33 is provided inside the insulating tube 32, specifically, inside a flow path 32x of the insulating tube 32 through which the cooling liquid CL flows.
Specifically, the capacitor 33 includes a first electrode 33A electrically connected to one of the metal pipes 31 adjacent to each other (the first metal pipe 31A), and a second electrode 33B electrically connected to the other of the metal pipes 31 adjacent to each other (the second metal pipe 31B) and disposed opposite to the first electrode 33A, and the capacitor 33 is configured such that the space between the first electrode 33A and the second electrode 33B is filled with the coolant CL. That is, the coolant CL flowing in the space between the first electrode 33A and the second electrode 33B serves as a dielectric body constituting the capacitor 33.
Each of the electrodes 33A and 33B has a substantially rotating body shape, and a main flow path 33x is formed at a central portion along a central portion thereof. Specifically, each electrode 33A, 33B has a flange 331 in electrical contact with an end of the metal tube 31 on the side of the insulating tube 32, and an extension 332 extending from the flange 331 toward the side of the insulating tube 32. The flange portion 331 and the extension portion 332 may be formed of a single member, or may be formed of different parts and joined together. The material of the electrodes 33A and 33B is, for example, aluminum, copper, an alloy thereof, or the like.
The flange 331 is in contact with the end portion of the metal pipe 31 on the insulating pipe 32 side over the entire circumferential direction. Specifically, the axial end surface of the flange 331 is in contact with the front end surface of the cylindrical contact portion 313 formed at the end of the metal pipe 31 over the entire circumferential direction.
The extension 332 has a cylindrical shape, and a main flow passage 33x is formed therein. The extension 332 of the first electrode 33A and the extension 332 of the second electrode 33B are coaxially arranged. That is, the extension portion 332 of the second electrode 33B is inserted into the extension portion 332 of the first electrode 33A. Thereby, a cylindrical space is formed between the extension 332 of the first electrode 33A and the extension 332 of the second electrode 33B along the flow path direction.
The electrodes 33A and 33B configured as described above are fitted in the concave portions 32B formed in the inner wall of the insulating tube 32. Specifically, the first electrode 33A is fitted into the recess 32B formed at one axial end side of the insulating tube 32, and the second electrode 33B is fitted into the recess 32B formed at the other axial end side of the insulating tube 32. By fitting the electrodes 33A and 33B into the recesses 32B as described above, the extension 332 of the first electrode 33A and the extension 332 of the second electrode 33B are coaxially arranged. The insertion dimension of the extension 332 of the second electrode 33B with respect to the extension 332 of the first electrode 33A is defined by the contact between the end surface of the flange 331 of each electrode 33A, 33B and the surface of each recess 32B facing axially outward.
Further, by fitting the electrodes 33A and 33B into the concave portions 32B of the insulating tube 32 and screwing the male screw portion 31a of the metal tube 31 into the female screw portion 32a of the insulating tube 32, the tip end surface of the contact portion 313 of the metal tube 31 is brought into contact with the flange portions 331 of the electrodes 33A and 33B, and the electrodes 33A and 33B are sandwiched and fixed between the insulating tube 32 and the metal tube 31. As described above, the antenna 3 of the present embodiment has a structure in which the metal tube 31, the insulating tube 32, the first electrode 33A, and the second electrode 33B are coaxially arranged.
In this configuration, when the coolant CL flows from the first metal pipe 31A, the coolant CL passes through the main flow path 33x of the first electrode 33A and flows toward the second electrode 33B. The coolant CL flowing to the second electrode 33B side flows through the main flow path 33x of the second electrode 33B toward the second metal pipe 31B. At this time, the cylindrical space between the extension 332 of the first electrode 33A and the extension 332 of the second electrode 33B is filled with the coolant CL, which becomes a dielectric body to constitute the capacitor 33.
Further, in the present embodiment, the connection portion between the metal pipe 31 and the insulating pipe 32 has a seal structure against the vacuum and the coolant CL. The seal structure is realized by the seal member 15 such as a packing provided at the base end portion of the male screw portion 31a, but for example, a taper screw structure for a pipe may be used.
With this structure, the sealing structure between the metal tube 31 and the insulating tube 32, the electrical contact between the metal tube 31 and the electrodes 33A and 33B, and the fastening of the male screw portion 31a and the female screw portion 32a are performed together, so that the assembling work becomes extremely simple.
The antenna device 10 of the present embodiment further includes a protruding insulating portion 5 provided between the axial end portions 3a, 3b of the antenna 3, protruding toward the inner peripheral surface 4a side of the insulating cover 4 than the outer peripheral surface 3c of the antenna 3, and including an insulating material. Specifically, the protruding insulating portion 5 is provided on the outer peripheral surface 3c of the antenna 3 covered by the insulating cover 4, and protrudes from the outer peripheral surface 3c of the antenna 3. More specifically, as shown in fig. 3 and 4, the insulator 51 constituting the protruding insulating portion 5 is annular, and the outer peripheral surface 51a of the insulator 51 is located closer to the inner peripheral surface 4a of the insulating cover 4 than the outer peripheral surface 3c of the antenna 3. Thus, even if the antenna 3 is deflected, contact between the antenna 3 and the insulating cover 4 is avoided. The insulating material is, for example, a high-melting-point ceramic such as quartz or alumina, and is preferably a material which is not easily deformed even when subjected to a long-time plasma treatment.
Further, a receiving recess 34 for receiving the insulator 51 is formed in the outer peripheral surface 3c of the antenna 3. Specifically, the housing recess 34 is formed on the outer peripheral surface 3c of the antenna 3 covered with the insulating cover 4, and is provided between the axial end surface 311a of the metal pipe 31 and the axial end surface 32c of the insulating pipe 32 in the present embodiment.
More specifically, the metal pipe 31 has a large diameter portion 311 and a small diameter portion 312 formed on an axial end surface 311a of the large diameter portion 311 and extending in the axial direction. The insulating tube 32 has an insertion recess 321, and the insertion recess 321 is formed in the axial end surface 32c, extends in the axial direction, and is inserted into the small diameter portion 312. According to the above configuration, the accommodation recess 34 is formed by the axial end face 311a of the large diameter portion 311, the outer peripheral face 312a of the small diameter portion 312, and the axial end face 32c of the insulating tube 32. That is, the axial end surface 311a of the large diameter portion 311 and the axial end surface 32c of the insulating tube 32 form the facing surfaces 34a and 34b facing the end surfaces 51c and 51d of the insulator 51, respectively, and the outer peripheral surface 312a of the small diameter portion 312 forms the bottom surface 34c of the accommodating recess 34.
The insulator 51 is mounted in the housing recess 34. Specifically, the insulator 51 is attached to the metal pipe 31 by moving along the outer peripheral surface 312a of the small diameter portion 312 to the axial end surface 311a of the large diameter portion 311. Then, by inserting the small diameter portion 312 into the insertion recess 321, the insulator 51 is disposed in the accommodation recess 34.
In a state where the insulator 51 is mounted in the housing recess 34, the inner peripheral surface 51b of the insulator 51 contacts the outer peripheral surface 312a of the small diameter portion 312, a part of one end surface 51c of the insulator 51 contacts the axial end surface 311a of the large diameter portion 311, and a part of the other end surface 51d contacts the axial end surface 32c of the insulating tube 32. Thereby, the insulator 51 is fixed to the housing recess 34 in the axial direction. Further, since the insulator 51 is annular and provided so as to straddle the outer peripheral surface 312a of the small diameter portion 312, movement of the small diameter portion 312 in the radial direction is restricted by the insulator 51, and deflection of the antenna 3 is suppressed.
In this state, the lengths of the end surfaces 51c and 51d of the insulator 51 in the radial direction are longer than the lengths of the axial end surfaces 311a and 32c in the radial direction. Accordingly, the end surfaces 51c and 51d of the insulator 51 protrude from the axial end surfaces 311a and 32c, and the outer peripheral surface 51a of the insulator 51 is located closer to the inner peripheral surface 4a of the insulating cover 4 than the outer peripheral surface 311b of the large diameter portion 311. That is, the protruding insulating portion 5 is constituted by protruding portions of the outer peripheral surface 51a, the end surface 51c, and the end surface 51d of the insulator 51.
< Experimental example >
In the plasma processing apparatus 100 according to the present embodiment, the Ar plasma (15 Pa, 3, kW) is generated by applying a high frequency to the antenna 3, and as a result, the Ar plasma is stably lighted for 1000 hours. On the other hand, in the conventional plasma processing apparatus, ar plasma (15 Pa, 3, kW) was generated by applying high frequency to the antenna, and as a result, holes were formed in the insulating cover near the abutting portion of the metal tube 31 and the insulating tube 32 after about 400 hours of integration, and the capacitor element was broken.
< Effect of the embodiment >
According to the present embodiment, the electric field is not concentrated on the protruding insulating portion 5, and therefore ions in the plasma do not collide with the insulating cover 4 near the protruding insulating portion 5, and the insulating cover 4 can be prevented from being damaged by etching. In addition, even in the case where the antenna 3 or the insulating cover 4 is deflected, contact of the antenna 3 with the insulating cover 4 can be avoided by protruding the insulating portion 5.
According to the present embodiment, since the antenna 3 is an LC antenna including the conductor member 31, the insulating member 32, and the capacitor 33 as a capacitive element, the capacitor 33 is electrically connected to the pair of conductor members 31, and the resultant reactance of the antenna 3 can be obtained by subtracting the capacitive reactance from the inductive reactance. As a result, the impedance of the antenna 3 can be reduced, and even when the antenna 3 is lengthened, an increase in the impedance can be suppressed, and a high-frequency current can easily flow through the antenna 3, so that a plasma with good uniformity can be efficiently generated.
According to the present embodiment, the protruding insulating portion 5 is provided in the accommodating recess 34, and therefore the movement of the protruding insulating portion 5 in the axial direction is restricted within the accommodating recess 34. Therefore, by providing the accommodating recess 34 at a portion where the antenna 3 is easily bent, contact between the antenna 3 and the insulating cover 4 can be avoided.
In particular, according to the present embodiment, since the antenna 3 is an LC antenna, when the antenna 3 is extended, a flexure is easily generated at a connection portion between the metal tube 31 and the insulating tube 32. Here, since the housing recess 34 is provided between the axial end surface 311a of the metal pipe 31 and the axial end surface 32c of the insulating pipe 32 and the insulator 51 is housed in the housing recess 34, even if the antenna 3 is deflected, the contact between the antenna 3 and the insulating cover 4 can be further avoided by the protruding insulating portion 5.
< Other modified embodiment >
Furthermore, the present invention is not limited to the embodiments.
In the above embodiment, the antenna 3 is an LC antenna including the conductor member 31, the insulating member 32, and the capacitor 33, but the antenna 3 is not limited to the LC antenna, and may be another antenna.
In the above embodiment, the insulator 51 constituting the protruding insulating portion 5 is annular, but the shape of the insulator 51 is not limited thereto. For example, the insulator 51 may have a partial ring shape, a protruding shape, or other shapes.
In the embodiment, in the section A-A, the outer peripheral surface 51a of the insulator 51 is shaped along the inner peripheral surface 4a of the insulating cover 4, but is not limited thereto. In the A-A cross-sectional view, the outer peripheral surface 51a of the insulator 51 may be convex, curved, or otherwise shaped.
In the embodiment described above, the accommodating recess 34 is provided between the axial end face 311a of the metal pipe 31 and the axial end face 32c of the insulating pipe 32, but the position for providing the accommodating recess 34 is not limited thereto. For example, as shown in fig. 5, the accommodating recess 34 may be formed on the outer peripheral surface 311b of the large diameter portion 311 of the metal pipe 31. Specifically, the accommodation recess 34 is formed in the outer peripheral surface 311b between the axial end surface 311a and the other end surface of the large diameter portion 311.
In this case, as shown in fig. 6, the insulator 51 is formed in a divided two-part annular shape, and the two insulators 51 are attached to the accommodating recess 34 by covering the two insulators 51 so as to sandwich the accommodating recess 34. In a state where the insulator 51 is mounted in the housing recess 34, the inner peripheral surface 51b of the insulator 51 contacts the outer peripheral surface 311b forming the housing recess 34, and the end surfaces 51c and 51d of the insulator 51 contact the facing surfaces 34a and 34b of the housing recess 34. Accordingly, since the protruding insulating portion 5 is provided in the accommodating recess 34 away from the insulating member 32, contact between the protruding insulating portion 5 and the insulating member 32 can be prevented, and temperature influence of the protruding insulating portion 5 on the insulating member 32 can be suppressed. As a result, a temperature difference can be prevented from occurring between the insulating pipes 32, and therefore breakage of the insulating pipes 32 can be prevented. In fig. 6, the number of the insulators 51 is two, but three or more insulators may be used, or one insulator may be used.
Alternatively, in the case where the accommodating recess 34 is formed in the outer peripheral surface 311b of the large diameter portion 311 of the metal pipe 31, as shown in fig. 7, the end surfaces 51c and 51d of the insulator 51 may be provided apart from the facing surfaces 34a and 34b of the accommodating recess 34. In this case, since the protruding insulating portion 5 is provided apart from the conductor member 31 in addition to the insulating member 32, the temperature influence of the protruding insulating portion 5 on the conductor member 31 and the insulating member 32 can be suppressed.
In the above embodiment, the small diameter portion 312 is formed in the conductor tube 31 and the insertion recess 321 is formed in the insulating tube 32, but the small diameter portion may be formed in the insulating tube 32 and the insertion recess may be formed in the conductor tube 31.
The metal pipe and the insulating pipe have a tubular shape having one internal flow path, but may have two or more internal flow paths or branched internal flow paths. In addition, the metal tube and the insulating tube may be solid.
In the electrode of the above embodiment, the extension portion is cylindrical, but may be other square cylindrical shape, or may be flat plate-shaped, curved or bent plate-shaped.
The present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the spirit and scope of the present invention.
Industrial applicability
According to the present invention, even when the antenna is extended to perform plasma treatment, damage to the insulating cover can be prevented.
Description of the reference numerals
100 Plasma processing apparatus
10 Antenna device
W is a substrate
P: inductively coupled plasma
2 Vacuum container
3 Antenna
31 Metal tube (conductor component)
32 Insulating tube (insulating parts)
33 Capacitor
33A first electrode
33B second electrode
34 Accommodating recess
4 Insulating cover
5 Protruding insulation portion
51 Insulator
CL Cooling liquid (dielectric of liquid)
Claims (6)
1. An antenna device for generating plasma by flowing a high-frequency current, comprising:
An antenna in a straight line;
an insulating cover in a straight pipe shape covering the outer peripheral surface of the antenna, and
And a protruding insulating portion provided between both axial end portions of the antenna, protruding further toward the inner peripheral surface side of the insulating cover than the outer peripheral surface of the antenna, and including an insulating material.
2. The antenna device according to claim 1, wherein,
The antenna further comprises:
At least two conductor members;
insulating members provided between the conductor members adjacent to each other to insulate the conductor members, and
And a capacitor element electrically connected in series with the conductor members adjacent to each other.
3. The antenna device according to claim 2, wherein a housing recess is formed in an outer peripheral surface of the antenna, the housing recess housing an insulator constituting the protruding insulating portion.
4. The antenna device according to claim 3, wherein the accommodation recess is formed between an axial end face of the conductor member and an axial end face of the insulating member.
5. The antenna device according to claim 3, wherein the receiving recess is formed in an outer peripheral surface of the conductor member.
6. A plasma processing apparatus, comprising:
the antenna device according to any one of claims 1 to 5;
A vacuum container having the antenna arranged inside or outside, and
And a high-frequency power supply for applying a high-frequency current to the antenna.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023-003845 | 2023-01-13 | ||
| JP2023003845A JP2024100104A (en) | 2023-01-13 | 2023-01-13 | Antenna device and plasma processing apparatus |
| PCT/JP2023/047256 WO2024150701A1 (en) | 2023-01-13 | 2023-12-28 | Antenna device and plasma processing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN119698928A true CN119698928A (en) | 2025-03-25 |
Family
ID=91897044
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202380059547.6A Pending CN119698928A (en) | 2023-01-13 | 2023-12-28 | Antenna device and plasma processing device |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2024100104A (en) |
| CN (1) | CN119698928A (en) |
| GB (1) | GB202502231D0 (en) |
| WO (1) | WO2024150701A1 (en) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6473332B2 (en) * | 2012-01-27 | 2019-02-20 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | Segmented antenna assembly and plasma generator |
| JP2017010820A (en) * | 2015-06-24 | 2017-01-12 | 日新電機株式会社 | Plasma processing device |
| JP6931461B2 (en) * | 2017-03-15 | 2021-09-08 | 日新電機株式会社 | Antenna for plasma generation, plasma processing device and antenna structure equipped with it |
| JP7025711B2 (en) * | 2018-03-14 | 2022-02-25 | 日新電機株式会社 | Antenna and plasma processing equipment |
| JP2021002474A (en) * | 2019-06-21 | 2021-01-07 | 日新電機株式会社 | Antenna and plasma processing apparatus |
-
2023
- 2023-01-13 JP JP2023003845A patent/JP2024100104A/en active Pending
- 2023-12-28 WO PCT/JP2023/047256 patent/WO2024150701A1/en unknown
- 2023-12-28 GB GBGB2502231.0A patent/GB202502231D0/en active Pending
- 2023-12-28 CN CN202380059547.6A patent/CN119698928A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JP2024100104A (en) | 2024-07-26 |
| GB202502231D0 (en) | 2025-04-02 |
| WO2024150701A1 (en) | 2024-07-18 |
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