CN118169453A - Voltage threshold detection circuit and application thereof - Google Patents
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Abstract
A voltage threshold detection circuit and application thereof, comprising: the first and second diode devices are devices with the current and the control voltage in an exponential relation, and the size of the first and second diode devices is smaller than that of the second diode device; the first end of the first resistor is connected with the first power end, the second end of the first resistor and the first end of the second resistor are respectively connected with the first connecting point, the first polarity device is respectively connected with the first connecting point and the second power end, and the second polarity device is respectively connected with the second end of the second resistor and the second power end; and the current mirror image comparison circuit is used for respectively mirroring the currents flowing through the first diode device and the second diode device to obtain a first current and a second current for comparison, and outputting a first signal for indicating that the first source terminal exceeds the voltage detection threshold vcc when the first current is larger than the second current. The embodiment of the application realizes the detection of the pressure threshold value by a simple structure, saves the area of a chip and reduces the manufacturing cost of the chip.
Description
Technical Field
The present disclosure relates to electrical signal detection, and more particularly to a voltage threshold detection circuit and application thereof.
Background
In programmable array logic (Field Programmable GATE ARRAY, FPGA) and other chips, there are often situations where it is desirable to detect whether a power supply has reached a minimum operating voltage or whether a voltage has reached a certain threshold, in which case voltage threshold detection circuitry is a common way.
In the related art, the voltage threshold detection circuit needs to compare the voltage to be detected with a bandgap reference voltage after resistor voltage division.
However, the bandgap circuit has a complex structure, occupies a large chip area, uses bipolar devices, requires a special process level, and further increases the manufacturing cost of the chip.
Disclosure of Invention
The application provides a voltage threshold detection circuit and application thereof, so that voltage threshold detection is realized by a simple structure, the area of a chip is saved, and the manufacturing cost of the chip is reduced.
In one aspect, the present application provides a voltage threshold detection circuit comprising: the device comprises a first resistor, a second resistor, a first polar device, a second polar device and a current mirror image comparison circuit, wherein the first polar device and the second polar device are devices with an exponential relation between current and control voltage, and the size of the first polar device is smaller than that of the second polar device;
The first end of the first resistor is electrically connected with a first power end, the second end of the first resistor and the first end of the second resistor are respectively electrically connected with the first connecting point, the first polarity device is respectively electrically connected with the first connecting point and a second power end, and the second polarity device is respectively electrically connected with the second end of the second resistor and the second power end; wherein the voltage of the first power supply terminal is greater than the voltage of the second power supply terminal;
The current mirror image comparison circuit is used for mirroring the current flowing through the first polarity device to obtain a first current, mirroring the current flowing through the second polarity device to obtain a second current, comparing the magnitudes of the first current and the second current, and outputting a first signal for indicating that the first power supply end exceeds a voltage detection threshold vcc when the first current is larger than the second current.
In another aspect, the application provides an application of the voltage threshold detection circuit for an FPGA, an analog Chip, a System-on-a-Chip (Soc), and a micro control unit (Microcontroller Unit, MCU).
Compared with the related art, the application designs two parallel branches, wherein one branch is a first polarity device with smaller size, and the other branch is a second polarity device with larger size and a resistor, so when the first power supply end starts to supply power and gradually increases, the current can change as follows: the current flowing through the second polar device is larger than the current flowing through the first polar device, the difference between the current flowing through the second polar device and the current flowing through the first polar device is gradually reduced until the current flowing through the first polar device is smaller than the current flowing through the second polar device, and a first signal that the first power supply end exceeds the voltage detection threshold vcc can be obtained, so that the voltage threshold detection is realized with a simple structure, the chip area is saved, and the manufacturing cost of the chip is reduced.
Additional features and advantages of the application will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the application. Other advantages of the application may be realized and attained by the structure particularly pointed out in the written description and drawings.
Additional features and advantages of the application will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the application. Other advantages of the application may be realized and attained by the structure particularly pointed out in the written description and drawings.
Drawings
The accompanying drawings are included to provide an understanding of the principles of the application, and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain, without limitation, the principles of the application.
FIG. 1 is a schematic diagram of a voltage threshold detection circuit in the related art;
FIG. 2 is a schematic diagram of a voltage threshold detection circuit according to an embodiment of the present application;
FIG. 3 is a schematic diagram illustrating a voltage threshold detection circuit according to another embodiment of the present application;
FIG. 4 is a schematic diagram illustrating a voltage threshold detection circuit according to another embodiment of the present application;
FIG. 5 is a schematic diagram of a voltage threshold detection circuit according to another embodiment of the present application;
FIG. 6 is a schematic diagram of a voltage threshold detection circuit according to another embodiment of the present application;
fig. 7 is a schematic diagram of a voltage detection threshold according to a temperature change curve according to an embodiment of the application.
Detailed Description
The present application has been described in terms of several embodiments, but the description is illustrative and not restrictive, and it will be apparent to those of ordinary skill in the art that many more embodiments and implementations are possible within the scope of the described embodiments. Although many possible combinations of features are shown in the drawings and discussed in the detailed description, many other combinations of the disclosed features are possible. Any feature or element of any embodiment may be used in combination with or in place of any other feature or element of any other embodiment unless specifically limited.
The present application includes and contemplates combinations of features and elements known to those of ordinary skill in the art. The disclosed embodiments, features and elements of the present application may also be combined with any conventional features or elements to form a unique inventive arrangement as defined by the claims. Any feature or element of any embodiment may also be combined with features or elements from other inventive arrangements to form another unique inventive arrangement as defined in the claims. It is therefore to be understood that any of the features shown and/or discussed in the present application may be implemented alone or in any suitable combination. Accordingly, the embodiments are not to be restricted except in light of the attached claims and their equivalents. Further, various modifications and changes may be made within the scope of the appended claims.
Furthermore, in describing representative embodiments, the specification may have presented the method and/or process as a particular sequence of steps. However, to the extent that the method or process does not rely on the particular order of steps set forth herein, the method or process should not be limited to the particular sequence of steps described. Other sequences of steps are possible as will be appreciated by those of ordinary skill in the art. Accordingly, the particular order of the steps set forth in the specification should not be construed as limitations on the claims. Furthermore, the claims directed to the method and/or process should not be limited to the performance of their steps in the order written, and one skilled in the art can readily appreciate that the sequences may be varied and still remain within the spirit and scope of the embodiments of the present application.
The bandgap circuit structure in the voltage threshold detection circuit in the related art has the following problems:
The band gap circuit has a complex structure, occupies a larger chip area, adopts bipolar devices, and has special process layers, so that the manufacturing cost of the chip is further increased.
2. The bandgap circuit itself also requires the power supply to reach a certain voltage to output the correct reference voltage, so the bandgap reference voltage itself requires an indication signal to indicate that the current power supply voltage is high enough, and the generated reference voltage is trusted.
Fig. 1 is a voltage threshold detection circuit in the related art, in which VCC1 is a power supply to be detected, BGR is a bandgap reference (Bandgap Reference, BGR) voltage generation circuit, and is powered by a stable auxiliary power supply VCC2, AMP1 is a comparator, which detects a reference voltage VREF generated by the voltage VDIV and BGR of VCC1 after the voltage division by resistors, and when VDIV > VREF, the comparator outputs a high level signal indicating that VCC1 has reached the minimum operable voltage. AMP1 may be powered by VCC1 or VCC 2.
However, in this voltage threshold detection circuit, BGR needs bipolar junction transistor (Bipolar Junction Transistor, BJT) devices of a special process level, i.e., Q1 and Q2 in fig. 1, and an auxiliary power VCC2 that is powered on first, which increases the mask and die cost of the FPGA chip.
To this end, an embodiment of the present application provides a voltage threshold detection circuit, as shown in fig. 2, including: the current mirror comparison circuit comprises a first resistor 11, a second resistor 12, a first polar device 13, a second polar device 14 and a current mirror comparison circuit 15, wherein the first polar device 13 and the second polar device 14 are devices with an exponential relation between current and control voltage, and the size of the first polar device 14 is smaller than that of the second polar device 14;
The first end of the first resistor 11 is electrically connected with a first power supply end, the second end of the first resistor 11 and the first end of the second resistor 12 are respectively electrically connected with a first connection point, the first polarity device 13 is respectively electrically connected with a first connection point and a second power supply end, and the second polarity device 14 is respectively electrically connected with a second end of the second resistor 12 and the second power supply end; wherein the voltage of the first power supply terminal is greater than the voltage of the second power supply terminal;
The current mirror image comparison circuit is used for mirroring the current flowing through the first polarity device to obtain a first current, mirroring the current flowing through the second polarity device to obtain a second current, comparing the magnitudes of the first current and the second current, and outputting a first signal for indicating that the first power supply end exceeds a voltage detection threshold vcc when the first current is larger than the second current.
According to the voltage threshold detection circuit provided by the embodiment of the application, two parallel branches are designed, one branch is a first polarity device with smaller size, and the other branch is a second polarity device with larger size and a resistor, so that when the first power supply end starts to supply power and gradually increases, the current can change as follows: the current flowing through the second polar device is larger than the current flowing through the first polar device, the difference between the current flowing through the second polar device and the current flowing through the first polar device is gradually reduced until the current flowing through the first polar device is smaller than the current flowing through the second polar device, and a first signal that the first power supply end exceeds the voltage detection threshold vcc can be obtained, so that the voltage threshold detection is realized with a simple structure, the chip area is saved, and the manufacturing cost of the chip is reduced.
The second power terminal may be a ground terminal.
In one illustrative example, as shown in fig. 2, the first polarity device and the second polarity device each include: a control electrode, a first electrode, and a second electrode;
The control electrode and the first electrode of the first polarity device are respectively and electrically connected with the first connecting point, the second electrode of the first polarity device is electrically connected with the second power end, the control electrode and the first electrode of the second polarity device are respectively and electrically connected with the second end of the second resistor, and the second electrode of the second polarity device is electrically connected with the second power end.
In an illustrative example, as shown in fig. 3, the voltage threshold detection circuit further includes: a buffer circuit 16, said buffer circuit 16 comprising: an input terminal, the current mirror comparison circuit comprising: an output end;
the output terminal of the current mirror comparison circuit 15 is connected to the input terminal of the buffer circuit 16, and is configured to perform signal shaping processing on the first signal, and output the first signal after the signal shaping processing.
When the current mirror comparison circuit compares the magnitude of the current flowing through the first polarity device with the magnitude of the current flowing through the second polarity device, the buffer circuit can convert the tiny pull-up current or pull-down current into 0 and 1 level signals when the comparison result is not obvious, so that the comparison result can be better represented.
In one illustrative example, as shown in fig. 4, the current mirror comparison circuit 15 includes: a first mirror circuit 151 and a second mirror circuit 152, each of the first mirror circuit 151 and the second mirror circuit 152 including: an output end;
The first mirror circuit 151 is electrically connected to the first power supply terminal, and is configured to provide an electrical signal of the first power supply terminal to an output terminal of the first mirror circuit 151 under control of a current flowing through the first polarity device 13;
The second mirror circuit 152 is electrically connected to the second power supply terminal, and is configured to provide a signal of the second power supply terminal to the output terminal of the second mirror circuit 152 under the control of the current flowing through the second diode device 14;
The output end of the first mirror circuit 151 is connected to the output end of the second mirror circuit 152 to obtain a second connection point, and the second connection point is used as the output end of the comparison circuit.
In an illustrative example, as shown in fig. 5, the first mirroring circuit includes 151: a third polar device 1511, a fourth polar device 1512, a fifth polar device 1513; the third polarity device 1511, the fourth polarity device 1512, and the fifth polarity device 1513 each include a control electrode, a first electrode, and a second electrode;
A first pole of the third polar device 1511 and a first pole of the fourth polar device 1512 are electrically connected to the first power supply terminal, respectively, a control pole of the third polar device 1511 and a control pole of the fourth polar device 1512 are electrically connected to a third connection point, respectively, a second pole of the fourth polar device 1512 is connected to the second connection point;
The control electrode of the fifth polarity device 1513 is electrically connected to the first connection point, the first electrode of the fifth polarity device 1513 is electrically connected to the second stage of the third polarity device 1511 and the third connection point, respectively, and the second stage of the fifth polarity device 1513 is electrically connected to the second power supply terminal.
In one illustrative example, as shown in fig. 6, the second mirror circuit 152 includes: a sixth polarity device 1521; the sixth polarity device 1521 includes a control electrode, a first electrode, and a second electrode;
A control electrode of the sixth polarity device 1521 is electrically connected to the second terminal of the second resistor 12, a first electrode of the sixth polarity device 1521 is connected to the second connection point, and a second electrode of the sixth polarity device 1521 is electrically connected to the second power supply terminal.
In one illustrative example, the first, second, fifth, and sixth polarity devices are first type polarity devices, and the third and fourth polarity devices are second type polarity devices.
In one illustrative example, the first type of polarity device includes: the N-type MOS transistor works in the subthreshold region, and the second-type polarity device comprises: p-type MOS tube.
The first type of polarity device may further include: NPN type triode.
When the first type of polar device is an N-type MOS transistor operating in a subthreshold region, the control electrode is referred to as a gate, the first and second poles are referred to as drains, and the first and second poles are referred to as sources.
When the first type of polar device is an NPN transistor, the control electrode is referred to as the base, the first and second electrodes are referred to as the collector, and the first and second electrodes are referred to as the emitter.
In one illustrative example, the ratio of the size of the first polarity device to the size of the second polarity device is 1: m, the voltage detection threshold vcc is determined by:
Wherein V gs1 represents a voltage value of a control electrode of the first polarity device, R 1 represents a resistance value of the first resistor, R 2 represents a resistance value of the second resistor, n represents an adjustment coefficient, kT represents a thermal voltage, k represents a boltzmann constant, T represents a temperature, and q represents an electric charge amount of electrons.
When the first polarity device and the second polarity device are MOS transistors working in a subthreshold region, a specific current and voltage relationship exists, and when the size ratio of the first polarity device to the second polarity device is 1: m, any desired VCC threshold voltage can be obtained by a specific current, voltage relationship. Specifically, the relationship between the current and the voltage of the MOS transistor in the subthreshold region can be obtained by the following relationship:
While
When the two currents are equal, there is
Wherein I dsn0 represents a drain current (subthreshold current) of the first polarity device, I dsn1 represents a drain current (subthreshold current) of the second polarity device, V gsn0 represents a gate voltage of the first polarity device, V gsn1 represents a gate voltage of the second polarity device, R 1 represents a resistance value of the first resistor, R 2 represents a resistance value of the second resistor, n represents an adjustment coefficient, generally close to 1, kt represents a thermal voltage, k represents boltzmann constant, T represents a temperature, and q represents an amount of charge of electrons.
Subthreshold current I dsn increases exponentially with increasing gate voltage V gsn.
When the VCC voltage continues to rise, the rising rate of I dsn0 exceeds the rising rate of I dsn1, and a current detection circuit formed by the third polar device, the fourth polar device, the fifth polar device, the sixth polar device and the buffer circuit outputs a high-level signal to indicate that the first power supply end exceeds the voltage detection threshold value
The voltage threshold detection circuit provided by the embodiment of the application comprises: the power supply to be detected VCC, a series of CMOS process devices, including a first polarity device (denoted N0), a second polarity device (denoted N1), a third polarity device (denoted P1), a fourth polarity device (denoted P2), a fifth polarity device (denoted N3), wherein P1, P2, N3 may be formed by any current mirror comparison circuit, and act as an output stage buffer circuit. N0 and N1 are MOS tubes working in a subthreshold region (the subthreshold region refers to a range where the signal quality is lower than a certain threshold but still acceptable to users), and the size ratio of the two is 1:M.
N0 and N1 are connected in parallel and have different sizes, wherein N0 with smaller size is not connected in series with a resistor or connected in series with a resistor with smaller size, and N1 with larger size is connected in series with a resistor with larger size. When the input voltage rises from zero, the current flowing through the N1 is larger at first, when the supply voltage reaches a value, the currents of the two MOS tubes are equal, and when the input supply voltage is higher than the value, the current flowing through the MOS tube with larger size, namely the current rising speed of N1 is smaller than the current flowing through the MOS tube with smaller size, namely the current of N0. The current mirror image comparison circuit judges whether the input power supply voltage reaches a certain threshold value or not by comparing the current values of the two transistors and outputs a power-on or voltage indication signal according to the threshold value.
The voltage detection threshold vcc may be shown in fig. 7 as a temperature variation curve (variation amplitude is less than ±1%).
In one illustrative example, the temperature coefficient of V gs1 is negative,The absolute value of the temperature coefficient of V gs1 is equal to/>Is a temperature coefficient of (c) a.
Since the temperature coefficient of V gs1 is negative,When the positive temperature coefficient and the negative temperature coefficient are all counteracted, a determined voltage which is not influenced by process fluctuation and temperature can be obtained; when the positive and negative temperature coefficients are partially cancelled, a certain voltage less affected by process fluctuation and temperature can be obtained.
The voltage threshold detection circuit provided by the embodiment of the application realizes a relatively accurate power-on detection function of the power supply voltage with a simpler circuit structure, smaller layout area and lower cost.
The embodiment of the application also provides an application of the voltage threshold detection circuit, and the voltage threshold detection circuit described in any embodiment can be used for an FPGA, an analog chip, a Soc and an MCU.
Those of ordinary skill in the art will appreciate that all or some of the steps, systems, functional modules/units in the apparatus, and methods disclosed above may be implemented as software, firmware, hardware, and suitable combinations thereof. In a hardware implementation, the division between the functional modules/units mentioned in the above description does not necessarily correspond to the division of physical components; for example, one physical component may have multiple functions, or one function or step may be performed cooperatively by several physical components. Some or all of the components may be implemented as software executed by a processor, such as a digital signal processor or microprocessor, or as hardware, or as an integrated circuit, such as an application specific integrated circuit. Such software may be distributed on computer readable media, which may include computer storage media (or non-transitory media) and communication media (or transitory media). The term computer storage media includes both volatile and nonvolatile, removable and non-removable media implemented in any method or technology for storage of information such as computer readable instructions, data structures, program modules or other data, as known to those skilled in the art. Computer storage media includes, but is not limited to, RAM, ROM, EEPROM, flash memory or other memory technology, CD-ROM, digital Versatile Disks (DVD) or other optical disk storage, magnetic cassettes, magnetic tape, magnetic disk storage or other magnetic storage devices, or any other medium which can be used to store the desired information and which can be accessed by a computer. Furthermore, as is well known to those of ordinary skill in the art, communication media typically embodies computer readable instructions, data structures, program modules or other data in a modulated data signal such as a carrier wave or other transport mechanism and includes any information delivery media.
Claims (10)
1. A voltage threshold detection circuit, comprising: the device comprises a first resistor, a second resistor, a first polar device, a second polar device and a current mirror image comparison circuit, wherein the first polar device and the second polar device are devices with an exponential relation between current and control voltage, and the size of the first polar device is smaller than that of the second polar device;
The first end of the first resistor is electrically connected with a first power end, the second end of the first resistor and the first end of the second resistor are respectively electrically connected with the first connecting point, the first polarity device is respectively electrically connected with the first connecting point and a second power end, and the second polarity device is respectively electrically connected with the second end of the second resistor and the second power end; wherein the voltage of the first power supply terminal is greater than the voltage of the second power supply terminal;
The current mirror image comparison circuit is used for mirroring the current flowing through the first polarity device to obtain a first current, mirroring the current flowing through the second polarity device to obtain a second current, comparing the magnitudes of the first current and the second current, and outputting a first signal for indicating that the first power supply end exceeds a voltage detection threshold vcc when the first current is larger than the second current.
2. The circuit of claim 1, wherein the first polarity device and the second polarity device each comprise: a control electrode, a first electrode, and a second electrode;
The control electrode and the first electrode of the first polarity device are respectively and electrically connected with the first connecting point, the second electrode of the first polarity device is electrically connected with the second power end, the control electrode and the first electrode of the second polarity device are respectively and electrically connected with the second end of the second resistor, and the second electrode of the second polarity device is electrically connected with the second power end.
3. The circuit of claim 1, wherein the voltage threshold detection circuit further comprises: a buffer circuit, the buffer circuit comprising: an input terminal, the current mirror comparison circuit comprising: an output end;
the output end of the current mirror image comparison circuit is connected to the input end of the buffer circuit and is used for carrying out signal shaping processing on the first signal and outputting the first signal subjected to the signal shaping processing.
4. A circuit according to claim 3, wherein the current mirror comparison circuit comprises: a first mirror circuit and a second mirror circuit, each of the first mirror circuit and the second mirror circuit comprising: an output end;
the first mirror circuit is electrically connected with the first power supply end and is used for providing an electric signal of the first power supply end to the output end of the first mirror circuit under the control of the current flowing through the first polarity device;
The second mirror circuit is electrically connected with the second power supply end and is used for providing a signal of the second power supply end to the output end of the second mirror circuit under the control of the current flowing through the second diode device;
the output end of the first mirror circuit is connected with the output end of the second mirror circuit to obtain a second connection point, and the second connection point is used as the output end of the comparison circuit.
5. The circuit of claim 4, wherein the first mirror circuit comprises: a third polar device, a fourth polar device, a fifth polar device; the third polarity device, the fourth polarity device, and the fifth polarity device each include a control electrode, a first electrode, and a second electrode;
The first pole of the third polar device and the first pole of the fourth polar device are respectively and electrically connected with the first power supply end, the control pole of the third polar device and the control pole of the fourth polar device are respectively and electrically connected with a third connection point, and the second pole of the fourth polar device is connected with the second connection point;
The control electrode of the fifth polarity device is electrically connected with the first connection point, the first electrode of the fifth polarity device is electrically connected with the second stage of the third polarity device and the third connection point respectively, and the second stage of the fifth polarity device is electrically connected with the second power supply end.
6. The circuit of claim 4, wherein the second mirror circuit comprises: a sixth polarity device; the sixth polarity device includes a control electrode, a first electrode and a second electrode;
The control electrode of the sixth polarity device is electrically connected with the second end of the second resistor, the first electrode of the sixth polarity device is connected to the second connection point, and the second electrode of the sixth polarity device is electrically connected with the second power end.
7. The circuit of claim 6, wherein the first, second, fifth, and sixth polarity devices are first type polarity devices, and the third and fourth polarity devices are second type polarity devices;
The first type of polarity device includes: the N-type MOS transistor works in the subthreshold region, and the second-type polarity device comprises: p-type MOS tube.
8. The circuit of claim 7, wherein a ratio of the size of the first polarity device to the size of the second polarity device is 1: m, the voltage detection threshold vcc is determined by:
Wherein V gs1 represents a voltage value of a control electrode of the second polar device, R 1 represents a resistance value of the first resistor, R 2 represents a resistance value of the second resistor, n represents an adjustment coefficient, kT represents a thermal voltage, k represents a boltzmann constant, T represents a temperature, and q represents an electric charge amount of electrons.
9. The circuit of claim 8, wherein the temperature coefficient of V gs1 is negative,The absolute value of the temperature coefficient of V gs1 is equal to/>Is a temperature coefficient of (c) a.
10. Use of a voltage threshold detection circuit according to any of claims 1-9, wherein the voltage threshold detection circuit is used in an FPGA, an analog chip, a Soc, an MCU.
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