CN117157740A - Method for manufacturing wafer - Google Patents

Method for manufacturing wafer Download PDF

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Publication number
CN117157740A
CN117157740A CN202280027176.9A CN202280027176A CN117157740A CN 117157740 A CN117157740 A CN 117157740A CN 202280027176 A CN202280027176 A CN 202280027176A CN 117157740 A CN117157740 A CN 117157740A
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China
Prior art keywords
wafer
main surface
holding unit
resin
upper stage
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CN202280027176.9A
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Chinese (zh)
Inventor
多贺稜
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Shin Etsu Handotai Co Ltd
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Shin Etsu Handotai Co Ltd
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Publication of CN117157740A publication Critical patent/CN117157740A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02013—Grinding, lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00—Component parts such as frames, beds, carriages, headstocks
    • B24B41/06—Work supports, e.g. adjustable steadies
    • B24B41/061—Work supports, e.g. adjustable steadies axially supporting turning workpieces, e.g. magnetically, pneumatically
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)

Abstract

The invention relates to a method for manufacturing a wafer, which comprises the following steps: pressing the wafer with the holding unit to bring the first main surface of the wafer into contact with the resin; while spreading the resin on the first main surface of the wafer, air is ejected from the holding unit between the holding unit and the second main surface, whereby the resin is spread on the first main surface of the wafer in a state in which the holding of the second main surface of the wafer by the holding unit is released; separating the wafer from the holding unit while performing air ejection; after the wafer is separated from the holding unit, the resin is cured to obtain a composite body including the planarized resin layer; grinding or polishing the second main surface of the wafer in this state of the suction-holding composite with the planarized resin layer as a reference surface; and grinding or polishing the first main surface of the wafer while the second main surface of the wafer is held by suction. Thus, a method for manufacturing a wafer is provided, which can manufacture a wafer with excellent Warp and excellent nanotopography.

Description

Method for manufacturing wafer
Technical Field
The present invention relates to a method for manufacturing a wafer. In particular, the present invention relates to a cover formation method and a surface grinding technique capable of manufacturing a wafer having excellent warpage and nanotopography.
Background
Substrate wafers are also required to have less Warp and good, particularly Warp and shorter wavelength waviness called nanotopography (hereinafter referred to as NT) is smaller and good. As a technique for achieving the latter, there is a processing method of covering one surface of a wafer with a resin and grinding the same (for example, patent documents 1 to 4).
For example, patent document 2 describes that a film of liquid resin is formed by expanding the liquid resin on one surface of a wafer sucked and held by a holding unit, and then air is ejected downward from the suction surface of the holding unit, whereby the wafer is pressed downward from the suction surface by the ejection pressure of the air, and the wafer is reliably detached from the holding unit.
Further, patent document 5 discloses a pressure change when changing the distance between the pressing portion and the table portion while storing gas ejected from the suction port at the time of assembling before resin coating.
Prior art literature
Patent literature
Patent document 1: japanese patent laid-open No. 2009-148866
Patent document 2: japanese patent application laid-open No. 2020-92161
Patent document 3: japanese patent laid-open No. 2007-134371
Patent document 4: japanese patent laid-open No. 2010-155298
Patent document 5: japanese patent No. 5670208 specification
Disclosure of Invention
First, the technical problem to be solved
In the method described in patent document 1, the shape of the holding means (stage) when the resin is pressed is transferred to the resin thickness distribution, and the shape of the wafer (warpage) after processing may be affected. As a prior art, patent document 2 discloses a method of recovering a deformation element of a wafer by supplying an acoustic wave after pressing a resin (after separating the wafer from an upper stage as a holding unit), but there is no technology of suppressing transfer of the shape of the holding unit during the pressing of the resin.
The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a method for manufacturing a wafer, which can manufacture a wafer having excellent Warp and excellent nanotopography.
(II) technical scheme
In order to solve the above problems, the present invention provides a method for manufacturing a wafer, comprising:
preparing a wafer having a first main surface and a second main surface located on the opposite side of the first main surface;
holding the second main surface of the wafer with a holding unit;
disposing a resin in a plastic state so as to face the first main surface of the wafer;
pressing the wafer with the holding unit so that the first main surface of the wafer contacts the resin;
while expanding the resin on the first main surface of the wafer, air is ejected from the holding unit between the holding unit and the second main surface, whereby the resin is expanded on the first main surface of the wafer in a state in which the holding of the second main surface of the wafer by the holding unit is released;
forming a gap between the wafer and the holding unit while performing the air ejection to separate the wafer from the holding unit;
after the separation of the wafer and the holding unit, curing the resin to form a flattened resin layer, thereby obtaining a composite body including the wafer and the flattened resin layer in contact with the first main surface of the wafer;
the composite is sucked and held by using the flattened resin layer as a reference surface, and the second main surface of the wafer is ground or polished in this state;
removing the planarization resin layer from the wafer; the method comprises the steps of,
the second main surface of the wafer is held by suction, and the first main surface of the wafer is ground or polished in this state.
According to the method for manufacturing a wafer of the present invention, the resin is spread on the first main surface of the wafer while the holding of the second main surface of the wafer by the holding means is released by air ejection, the wafer and the holding means are separated by air ejection, and the resin is cured after the separation, whereby the shape of the holding means can be prevented from being transferred to the wafer, and as a result, a wafer having excellent Warp and excellent nanotopography can be manufactured.
In the separation of the wafer and the holding unit, the gap may be formed between the wafer and the holding unit by the flow of the resin by waiting without changing the height of the holding unit, and the formation of the gap may be grasped based on a load value applied to the holding unit.
For example, the wafer and the holding unit can be separated by performing standby while spraying air so as not to change the height of the holding unit.
Alternatively, the gap between the wafer and the holding unit may be formed by the retraction of the holding unit when the wafer and the holding unit are separated from each other.
In this way, the wafer and the holding unit can be separated by retracting the holding unit from the wafer. By providing this, the gap between the wafer and the holding unit can be sufficiently ensured in a relatively short time.
(III) beneficial effects
As described above, in the method for manufacturing a wafer according to the present invention, the shape of the holding unit can be prevented from being transferred to the wafer, and as a result, a wafer having small Warp and good and having small nanotopography and good can be manufactured.
Drawings
Fig. 1 is a schematic flowchart showing an example of a method for manufacturing a wafer according to the present invention.
Fig. 2 is a schematic flowchart showing another example of the wafer manufacturing method of the present invention.
Fig. 3 is a schematic flowchart showing an example of a conventional wafer manufacturing method.
Detailed Description
As described above, it is demanded to develop a method for manufacturing a wafer capable of manufacturing a wafer having excellent Warp and excellent nanotopography.
The present inventors have studied intensively about the above-mentioned technical problems, and as a result, have found that transfer of the shape of the holding unit to the wafer can be suppressed by the following method, and as a result, a wafer having excellent Warp and excellent nanotopography can be produced, and the present invention has been completed: the method includes expanding resin on a first main surface of a wafer while releasing the holding of a second main surface of the wafer by a holding unit while performing air ejection, separating the wafer from the holding unit while performing air ejection, and curing the resin after the separation.
That is, the present invention is a method for manufacturing a wafer, comprising:
preparing a wafer having a first main surface and a second main surface located on the opposite side of the first main surface;
holding the second main surface of the wafer with a holding unit;
disposing a resin in a plastic state so as to face the first main surface of the wafer;
pressing the wafer with the holding unit so that the first main surface of the wafer contacts the resin;
while expanding the resin on the first main surface of the wafer, air is ejected from the holding unit between the holding unit and the second main surface, whereby the resin is expanded on the first main surface of the wafer in a state in which the holding of the second main surface of the wafer by the holding unit is released;
forming a gap between the wafer and the holding unit while performing the air ejection to separate the wafer from the holding unit;
after the separation of the wafer and the holding unit, curing the resin to form a flattened resin layer, thereby obtaining a composite body including the wafer and the flattened resin layer in contact with the first main surface of the wafer;
the composite is sucked and held by using the flattened resin layer as a reference surface, and the second main surface of the wafer is ground or polished in this state;
removing the planarization resin layer from the wafer; the method comprises the steps of,
the second main surface of the wafer is held by suction, and the first main surface of the wafer is ground or polished in this state.
On the other hand, patent documents 1 to 5 do not describe or suggest the following: the wafer is separated from the holding unit by spreading the resin on the wafer while air is ejected from the holding unit.
The present invention will be described in detail below with reference to the drawings, but the present invention is not limited to these descriptions. In the drawings, the irregularities of the wafer before grinding, the warpage of the holding means, and the like are exaggeratedly shown for the sake of explanation, but in the wafer manufacturing method of the present invention, the irregularities of the wafer before grinding, the warpage of the holding means, and the like are not limited to the extent shown in the drawings.
Fig. 1 and 2 are schematic flowcharts each showing an example of a method of manufacturing a wafer according to the present invention. The example of fig. 2 is the same as the example of fig. 1 except that the steps of fig. 2 (E) and fig. 2 (F) are different from those of fig. 1 (E) and fig. 1 (F). Hereinafter, the example of fig. 1 will be described as a representative, and only the steps of fig. 2 (E) and 2 (F) will be described with respect to the example of fig. 2.
First, as shown in fig. 1 (a), a wafer 1 having a first main surface 1A and a second main surface 1B located on the opposite side of the first main surface 1A is prepared. The wafer 1 to be prepared is not particularly limited.
Then, as shown in fig. 1 (B), the second main surface 1B of the wafer 1 is held by the holding means 2. In this example, the second main surface 1B of the wafer 1 is vacuum-sucked and held by the upper stage 2 as holding means. The upper stage 2 can vacuum-suck the wafer 1 by vacuum suction through the through holes 2a penetrating the upper stage 2 up and down.
On the other hand, as shown in fig. 1 (B), a resin 5 in a plastic state is disposed so as to face the first main surface 1A of the wafer 1. In this example, a translucent film 4 is laid on a glass stage 3 (lower stage) having a flat surface, and a resin 5 in a plastic state, for example, in a liquid state is supplied thereto. The resin 5 is not particularly limited as long as it can be cured.
Then, as shown in fig. 1 (C), the wafer 1 is pressed by the holding unit 2, and the first main surface 1A of the wafer 1 is brought into contact with the resin 5. In this example, the upper stage 2 as the holding means is lowered, and the wafer 1 sucked and held on the upper stage 2 is pressed against the resin 5 from above, so that the first main surface 1A of the wafer 1 contacts the resin 5.
After the resin 5 contacts the wafer 1, air ejection is started. In this example, as shown in fig. 1D, air ejection is started from the upper stage 2 to between the upper stage 2 and the second main surface 1B of the wafer 1 at the point where the resin 5 contacts the first main surface 1A of the wafer 1 (at the position where the load applied to the upper stage 2 exceeds the set load (a)). The air can be injected through, for example, the through-holes 2a of the upper stage 2.
Then, the upper stage 2 is lowered until the resin 5 is sufficiently spread while continuing the air injection. That is, air ejection is performed while spreading the resin 5 on the first main surface 1A of the wafer 1. In this way, the present invention expands the resin 5 on the first main surface 1 of the wafer 1 while releasing the holding of the second main surface 1B of the wafer 1 by the holding unit 2.
During the air ejection, a portion of the second main surface 1B of the wafer 1 may contact the upper stage 2 (e.g., point contact), but the state in which the holding of the second main surface 1B of the wafer 1 by the holding unit 2 is released is maintained.
By pressing the resin 5 from above while injecting air in this manner, an air cushion layer is formed between the upper stage 2 and the second main surface 1B of the wafer 1, and thus, the shape of the upper stage 2 can be prevented from being transferred to the wafer 1.
Then, the lowering of the upper deck 2 is stopped with the set stop load (B). In this example, standby is performed so as not to change the height of the upper stage 2 as the holding unit. The air is also continuously injected during this period. As a result, the resin 5 naturally spreads gradually, and as shown in fig. 1 (E), a gap 2b is formed between the wafer 1 and the upper stage 2. Thereby separating the wafer 1 from the upper stage 2.
Then, as shown in fig. 1 (E), the resin 5 spreads naturally, and the air injection is stopped at a timing when the gap between the upper stage 2 and the wafer 1 is sufficiently secured. For example, if the load applied to the upper deck 2 is grasped and the load is reduced to the set load (C), the air injection is stopped.
Alternatively, as shown in fig. 2 (E), after the set stop load (B) is detected, the upper stage 2 may be retracted (moved upward) while continuing to eject air, and if the space between the upper stage 2 and the wafer 1 is sufficiently secured, the air ejection is stopped, thereby separating the upper stage 2 from the wafer 1 and forming a gap 2B therebetween.
By stopping the air ejection in a state where the clearance between the wafer 1 and the upper stage 2 is sufficiently ensured, it is possible to prevent the wafer 1 from coming into contact with the upper stage 2 again due to the elasticity of the wafer 1 or the resin 5. As a result, the shape of the upper stage 2 can be more reliably prevented from being transferred to the resin thickness via the wafer 1.
After the wafer 1 is separated from the upper stage 2, as shown in fig. 1 (F), the resin 5 is cured to form the flattened resin layer 6, and the composite 10 including the wafer 1 and the flattened resin layer 6 in contact with the first main surface 1A of the wafer 1 is obtained.
In this example, since the lower stage 3 is a glass stage, the ultraviolet rays are irradiated from below the lower stage 3, so that the ultraviolet rays can penetrate the lower stage 3 and the light-transmitting film 4 to irradiate the resin 5, and the resin 5 is cured. The curing method of the resin 5 is not limited to ultraviolet irradiation, and may be appropriately changed according to the type of the resin 5. For example, when the resin 5 is a thermosetting resin, the resin can be cured by an external stimulus such as heat.
In the example shown in fig. 2, as also shown in fig. 2 (E), after the wafer 1 is separated from the upper stage 2, the resin 5 is cured in a state shown in fig. 2 (F) to form the planarized resin layer 6.
Then, as shown in fig. 1 (G), the composite 10 is transferred to, for example, a polishing table 20 with the planarized resin layer 6 as a reference surface, and the composite 10 is sucked and held. The polishing table 20 is made of porous ceramic, for example, and can hold the composite 10 by vacuum adsorption.
Then, as shown in fig. 1 (H), the second main surface 1B of the wafer 1 is ground or polished while being sucked and held by the grinding table 20. In this example, the second main surface 1B of the wafer 1 is ground (first ground) using the grinding wheel 30, and the ground second main surface 1C is obtained. For example, grinding is performed so that the TTV after grinding is 1 μm or less.
Then, as shown in fig. 1 (I), the planarizing resin layer 6 is removed from the wafer 1. In this example, the light-transmitting film 4 is also removed at the same time.
Then, as shown in fig. 1 (J), the wafer 1 is turned over, and the ground second main surface 1C of the wafer 1 is sucked and held by the grinding table 20, and the first main surface 1A of the wafer 1 is ground or polished in this state. In this example, the first main surface 1A of the wafer 1 is ground using the grinding wheel 30, and the ground first main surface 1D is obtained.
As shown in fig. 1 (K), the wafer 1 obtained in this way has a first main surface 1D after grinding and a second main surface 1C after grinding. The wafer 1 can prevent the shape of the holding unit (upper stage) 2 from being transferred to the wafer 1 by expanding the resin 5 on the first main surface 1A of the wafer 1 while releasing the holding of the second main surface 1B of the wafer 1 by the holding unit (upper stage) 2 while performing air ejection, separating the wafer 1 from the holding unit 2 while performing air ejection, and solidifying the resin 5 after the separation. That is, a wafer having small Warp (Warp) and good properties can be manufactured. Further, the second main surface 1B is ground in a state where the planarizing resin layer 6 is formed in contact with the first main surface 1A of the wafer 1, and then the wafer 1 is turned over, whereby the first main surface 1A is ground, and the nanotopography can be made smaller than the target value.
On the other hand, for example, as described below with reference to fig. 3, the conventional wafer manufacturing method cannot manufacture a wafer with small Warp and good.
In the conventional example of the wafer manufacturing method shown in the schematic flow chart of fig. 3, mainly, fig. 3 (D) is different from the wafer manufacturing method of the present invention exemplified by fig. 1 (D) and fig. 2 (D). That is, in the conventional method shown in fig. 3, the resin 5 is not sprayed with air even after the resin 5 contacts the wafer 1, but the resin 5 is continuously spread on the first main surface 1A of the wafer 1 while the holding of the second main surface 1B of the wafer 1 by the holding means (upper stage) 2 is maintained. As a result, as shown in fig. 3 (E), after the holding by the upper stage 2 is released, the wafer 1 transferred with the shape of the upper stage 2 is obtained. As a result, as shown in fig. 3 (K), warp of the wafer 1 obtained by grinding the second main surface 1B and the first main surface 1A is large.
Examples
Hereinafter, the present invention will be described specifically with reference to examples and comparative examples, but the present invention is not limited to these examples.
[ Experimental details ]
(formation of a planarization resin layer on a wafer)
< examples 1-1 to 1-4>
In examples 1-1 to 1-4, a composite comprising a wafer and a planarizing resin layer in contact with the first main surface of the wafer was produced under the following conditions in accordance with the same flow as in fig. 1 (a) to 1 (F).
Cover (flattening resin layer) forming condition
■ As the wafer, a P-type single crystal silicon wafer having a diameter of 300mm was used.
■ As the resin, an Ultraviolet (UV) curable resin was used, and as the light-transmitting film, a PET film was used.
■ A PET film was laid on a flat glass table (lower table), and 10ml of UV curable resin was dropped on the PET film.
■ The second main surface of the wafer is sucked and held by a ceramic stage (upper stage), and lowered toward the resin, thereby pressing the resin.
■ In the pressing control, the servo motor holding the upper stage is driven, and vacuum suction is stopped at the timing when a predetermined load (a) of 100N is detected, and air injection is started.
■ The upper stage was lowered while continuing to jet air, and the lowering of the upper stage was stopped at a stop load (B) of 2000N. Thus, the resin is spread on the first main surface of the wafer while the holding of the second main surface of the wafer by the upper stage is released.
■ By waiting while the air is being injected, the resin spreads naturally, and the load applied to the upper stage is reduced. Thereby, a gap is formed between the wafer and the upper stage, separating the wafer from the upper stage.
■ After the load applied to the upper stage is reduced to the set load (C), the air injection is stopped.
■ Ultraviolet rays are irradiated to cure the resin, thereby forming a planarized resin layer. (there is a gap between the wafer and the upper stage when ultraviolet light is irradiated)
■ Here, 4 cases were carried out in which the set load (C) was 1500N (example 1-1), 1000N (example 1-2), 500N (example 1-3), and 100N (example 1-4) in consideration of the effect of transfer due to the gap between the wafer and the upper stage until the ejection of air was stopped.
■ As a light source for curing the resin, an ultraviolet light emitting diode (UV-LED) having a wavelength of 365nm was used.
Comparative example 2 ]
In comparative example 2, a composite including a wafer and a planarizing resin layer in contact with a first main surface of the wafer was produced in the same flow as in fig. 3 (a) to 3 (F). Specifically, the control of pressing was changed from example 1-1 to the following.
■ In the pressing control, the upper stage was driven by a servo motor holding the upper stage, and the lowering of the upper stage was stopped at a stop load (B) of 2000N. During this time, air is not injected, and the resin is spread on the first main surface of the wafer while the wafer is held by the stage.
■ Then, vacuum adsorption was stopped and air ejection was started.
■ The upper platform is raised and stopped, and the air injection is stopped. Thereby, a gap is formed between the wafer and the upper stage.
■ Ultraviolet rays are irradiated to cure the resin, thereby forming a planarized resin layer. (there is a gap between the wafer and the upper stage when ultraviolet light is irradiated)
■ As a light source for curing the resin, a UV-LED having a wavelength of 365nm was used.
< examples 2-1 to 2-3>
In examples 2-1 to 2-3, a composite comprising a wafer and a planarizing resin layer in contact with the first main surface of the wafer was produced in the same flow as in fig. 2 (a) to 2 (F). Specifically, the control of pressing was changed from example 1-1 to the following.
■ In the pressing control, the servo motor holding the upper stage is driven, and vacuum suction is stopped at the timing when a predetermined load (a) of 100N is detected, and air injection is started.
■ The upper stage was lowered while continuing to jet air, and the lowering of the upper stage was stopped at a stop load (B) of 2000N. Thus, the resin is spread on the first main surface of the wafer while the holding of the second main surface of the wafer by the upper stage is released.
■ Then, the air injection is stopped after the upper stage is raised by a predetermined distance L and stopped while continuing to inject air. Thereby, a gap is formed between the wafer and the upper stage.
■ Ultraviolet rays are irradiated to cure the resin, thereby forming a planarized resin layer. (there is a gap between the wafer and the upper stage when ultraviolet light is irradiated)
■ Here, 3 examples were carried out in which the predetermined distance L was set to 2 μm (example 2-1), 5 μm (example 2-2), and 10 μm (example 2-3) in consideration of the effect of transfer due to the gap between the wafer and the upper stage.
■ As a light source for curing the resin, a UV-LED having a wavelength of 365nm was used.
(grinding process)
Comparative example 1]
In comparative example 1, a P-type single crystal silicon wafer having a diameter of 300mm, which was the same as that used in example 1-1, was prepared, and this wafer was subjected to grinding under the following conditions.
< examples 1-1 to 1-4, comparative example 2, examples 2-1 to 2-3>
In examples 1-1 to 1-4, comparative example 2 and examples 2-1 to 2-3, the previously produced composite was subjected to grinding under the following conditions.
Grinding conditions
■ DFG8360 manufactured by diesco corporation was used for the grinding process.
■ As the grinding wheel, a grinding wheel incorporating diamond abrasive grains was used.
The following grinding methods are described separately, since < comparative example 1> is different from the other examples (< comparative example 2>, < examples 1-1 to 1-4>, < examples 2-1 to 2-3 >).
Comparative example 1]
First grinding condition (grinding of the back surface (second main surface))
■ The front surface (first main surface) of the wafer was vacuum-sucked to the polishing table, and the back surface (second main surface) was ground. (no flattening resin layer)
Second grinding condition (surface (first main surface))
■ The first grinding surface (second main surface after grinding) is vacuum-sucked to the grinding table, and grinding processing of the surface (first main surface) is performed.
■ By adjusting the shaft angle of the chuck table, the wafer thickness variation is adjusted to be 1 μm or less.
< comparative example 2>, < examples 1-1 to 1-4>, < examples 2-1 to 2-3>
First grinding condition (grinding of the back surface (second main surface))
■ The back surface (second main surface) of the vacuum-adsorbed composite was ground on the cover (planarizing resin layer) side.
■ The planarized resin layer is peeled off after grinding.
Second grinding condition (surface (first main surface))
■ The first grinding surface (second main surface after grinding) is vacuum-sucked to the grinding table, and grinding processing of the surface (first main surface) is performed.
■ By adjusting the axis angle of the chuck table, the wafer thickness deviation is adjusted to be 1 μm or less.
(mirror polishing)
The front and rear surfaces (the first and second main surfaces after grinding) of each wafer subjected to the grinding processing as described above were subjected to mirror polishing processing.
[ measurement results ]
Warp and Nanotopography (NT) of each wafer after mirror polishing were measured in the following manner.
For measurement of Warp and NT, an optical interference type flatness/NT measuring device (trade name WaferSight2+ (manufactured by KLA Co.) was used.
As an index of NT, SQMM 2mm. Times.2 mm was used.
The results are shown in table 1 below.
TABLE 1
In comparative example 1, since grinding was performed so as not to form a flattening resin layer, both Warp and NT were poor.
In comparative example 2, although NT was good by forming a planarized resin layer and grinding, since resin was continuously spread on the first main surface of the wafer while maintaining the holding state by the upper platen, transfer of the platen shape occurred, resulting in Warp defect.
On the other hand, in examples 1-1, 1-2, 1-3 and 1-4, the resin was spread on the first main surface of the wafer while the holding by the upper stage was released by air jetting, and the resin was cured to form a flattened resin layer in a state where the upper stage was separated from the wafer, whereby the transfer of the stage shape was relaxed, and Warp was improved as compared with comparative example 2.
In particular, in examples 1 to 3 and 1 to 4 in which the air ejection stop load was set to 500N or less, the gap between the wafer and the upper stage was sufficiently ensured at the time of air ejection stop, and therefore Warp was further improved.
On the other hand, in examples 2-1, 2-2 and 2-3, the resin was spread on the first main surface of the wafer while the holding by the upper stage was released, and the resin was cured to form a flattened resin layer in a state where the upper stage was separated from the wafer, whereby the transfer of the stage shape was relaxed, and Warp was improved as compared with comparative example 2.
In particular, in examples 2-2 and 2-3 in which the distance for retracting the upper stage during the air ejection is 5 μm or more, the gap between the wafer and the upper stage is sufficiently ensured when the air ejection is stopped, and therefore Warp is further improved.
From the above results, it was found that, when forming the planarizing resin layer, the resin was spread on the first main surface of the wafer while the holding by the upper stage was released by air jetting, and the planarizing resin layer was formed by curing the resin in a state where the upper stage was separated from the wafer, whereby transfer of the stage shape was prevented.
It is also understood that when the upper stage is standby to separate the upper stage from the wafer, the load at the time of stopping the air jet is preferably 500N or less.
It is also known that, from the viewpoint of shortening the processing time, it is preferable to retract the upper stage during the air injection, and it is more preferable to set the distance by which the upper stage is retracted to 5 μm or more.
The present invention is not limited to the above embodiments. The above-described embodiments are examples, and any embodiments having substantially the same configuration as the technical idea described in the claims of the present invention and having the same operational effects are included in the technical scope of the present invention.

Claims (3)

1. A method for manufacturing a wafer, comprising the steps of:
preparing a wafer having a first main surface and a second main surface located on the opposite side of the first main surface;
holding the second main surface of the wafer with a holding unit;
disposing a resin in a plastic state so as to face the first main surface of the wafer;
pressing the wafer with the holding unit so that the first main surface of the wafer contacts the resin;
while expanding the resin on the first main surface of the wafer, air is ejected from the holding unit between the holding unit and the second main surface, whereby the resin is expanded on the first main surface of the wafer in a state in which the holding of the second main surface of the wafer by the holding unit is released;
forming a gap between the wafer and the holding unit while performing the air ejection to separate the wafer from the holding unit;
after the separation of the wafer and the holding unit, curing the resin to form a flattened resin layer, thereby obtaining a composite body including the wafer and the flattened resin layer in contact with the first main surface of the wafer;
the composite is sucked and held by using the flattened resin layer as a reference surface, and the second main surface of the wafer is ground or polished in this state;
removing the planarization resin layer from the wafer; the method comprises the steps of,
the second main surface of the wafer is held by suction, and the first main surface of the wafer is ground or polished in this state.
2. The method of manufacturing a wafer according to claim 1, wherein,
when the wafer and the holding unit are separated, the gap is formed between the wafer and the holding unit by the flow of the resin by waiting without changing the height of the holding unit, and the formation of the gap is grasped from the load value applied to the holding unit.
3. The method of manufacturing a wafer according to claim 1, wherein,
the gap between the wafer and the holding unit is formed by the retreat of the holding unit at the time of the separation of the wafer and the holding unit.
CN202280027176.9A 2021-05-07 2022-03-03 Method for manufacturing wafer Pending CN117157740A (en)

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JP2021-079071 2021-05-07
JP2021079071A JP2022172822A (en) 2021-05-07 2021-05-07 Wafer manufacturing method
PCT/JP2022/009025 WO2022234714A1 (en) 2021-05-07 2022-03-03 Method for producing wafer

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JP2002086352A (en) * 2000-09-13 2002-03-26 Matsushita Electric Ind Co Ltd Adhering device and polishing jig
JP2007134371A (en) 2005-11-08 2007-05-31 Nikka Seiko Kk Method and apparatus for forming reference surface of wafer
JP5089370B2 (en) 2007-12-21 2012-12-05 株式会社ディスコ Resin coating method and apparatus
JP5324212B2 (en) 2008-12-26 2013-10-23 株式会社ディスコ Resin coating method and resin coating apparatus
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JP5912657B2 (en) * 2012-02-27 2016-04-27 株式会社ディスコ Resin pasting device
JP2015038919A (en) * 2013-08-19 2015-02-26 株式会社ディスコ Wafer manufacturing method
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