CN115373594A - Bidirectional dynamic switching storage system and dynamic switching management method - Google Patents
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Abstract
The invention provides a bidirectional dynamic switching storage system which comprises N storage units. The storage unit is divided into: the data storage device comprises a first type unit for storing at least one type of data, or a second type unit for storing two types of data. The performance parameter of the first-class unit is larger than a threshold value Q, and the performance parameter of the second-class unit is smaller than or equal to the threshold value Q. The threshold Q is configured into a dynamic threshold, so that the number n of the first-class units is not lower than the number threshold p, the problem of excessive use of partial modules of the existing storage system is solved, and the performance and the service life of each storage unit are balanced.
Description
Technical Field
The present invention relates to a storage system and a management method, and in particular, to a management method, a device and a system for bidirectional and dynamically switched storage units, which belong to the field of data storage.
Background
Solid state storage and embedded storage have grown very rapidly over the years, resulting in a rapid increase in consumer demand for memory. Since a nonvolatile memory module (e.g., a flash memory) has characteristics of data non-volatility, power saving, small size, and no mechanical structure, it is very suitable for being built in various portable devices.
Generally, in order to prolong the service life of the memory, the memory can adaptively switch the control of some memory units. The main control unit stores hot data in the storage units with higher performance and stores cold data in the storage units with lower performance, so that the performance parameters of the storage units are balanced as much as possible. Some memories currently support the unified control of some higher-performance memory cells over other lower-performance memory cells when the wear level is higher, but when the number of higher-performance memory cells is gradually reduced, insufficient memory cells are provided for storing data. In order to achieve the performance and life balance of each memory unit of the memory, it is imperative to provide a bidirectional dynamic switching memory system and management rules.
Disclosure of Invention
The invention provides a bidirectional dynamic switching storage system which comprises N storage units. The storage unit is divided into: the data storage device comprises a first type unit for storing at least one type of data, or a second type unit for storing two types of data. The performance parameter of the first-class unit is larger than a threshold value Q, and the performance parameter of the second-class unit is smaller than or equal to the threshold value Q. The threshold Q is configured into a dynamic threshold, so that the number n of the first-class units is not lower than the number threshold p, the problem of excessive use of partial modules of the conventional storage system is solved, and the performance and the service life of each storage unit are balanced.
Specifically, the performance parameter threshold Q is modulated by a controller, and when the number n of the first-class units reaches a number threshold p, the threshold Q is decreased to increase the value of n, so that the number n of the first-class units is not lower than the threshold p. Wherein,
when the performance parameter of a memory cell is reduced from being larger than a threshold value Q to being lower than Q, the memory cell is changed into a second type cell from a first type cell, and the number n of the first type cells is reduced by 1.
When the threshold Q is lowered to Q1, part of the second-class units with the performance parameters larger than the threshold Q1 are changed into the first-class units from the second-class units.
In this application, the performance parameters of all the memory cells in the initial stage may be greater than the threshold Q, and at this time, some memory cells may be randomly selected to store the second type data.
In the prior art, the threshold Q is a fixed value, and the number of one type of cells is irreversibly reduced during the use of the memory cell, so that the memory system cannot provide enough one type of cells for storing one type of data. Even if one type of unit is used to store one type of data all the time, a part of one type of unit is overused, and the service life of the storage system is greatly reduced. In the application, the threshold value Q is set to be a dynamic regulation value, the adaptive change is carried out according to the actual operation condition of the memory, and the number of the first-class unit and the second-class unit can be dynamically adjusted, so that the memory system can always keep enough two-class units for storing corresponding data. When the number n of cells of one type reaches a number threshold p, indicating that the number of cells of one type available has reached a tolerable limit, the threshold Q is decreased to increase the number n of cells of one type, enabling more cells of one type to be provided for use by the storage system. Therefore, the adaptive dynamic management is carried out on the performance threshold Q, the service life balance of each storage unit in each type of storage unit is scientifically and comprehensively realized, different types of data can be distributed to the storage units according to the performance of the storage units, the utilization rate of the storage units is maximized, the service life of a storage system can be greatly prolonged, the algorithm is simple, the pressure on a controller is low, and the occupied read-write resources are few.
Memory cells suitable for use in the present invention may be:
(1) A volatile memory: dynamic random access memory DRAM, static random access memory SRAM.
(2) A nonvolatile memory: ferroelectric RAM (FeRAM), magnetic RAM (MRAM), phase Change RAM (PCRAM), resistive RAM (ReRAM), flash memory (NAND Flash).
The following parameters may be used as performance parameters of the memory cell:
(1) Number of remaining erasibles
For example, the maximum erasing times of the first-class unit and the second-class unit and the erased times of the first-class unit and the second-class unit in the working process are respectively obtained through a controller; calculating the residual erasable times of the first-class unit and the second-class unit according to the maximum erasable times and the erased times of the first-class unit and the second-class unit;
when the residual erasable times are used as performance parameters, the service life of the storage unit is judged according to the residual erasable times, so that the service lives of all storage units of the storage system can be effectively balanced, and premature failure of the storage system caused by excessive use of a certain storage unit is avoided;
(2) Remaining storable data duration
For example, the controller may also obtain the maximum data storage durations of the first-type unit and the second-type unit and the stored data durations of the first-type unit and the second-type unit in the working process, respectively; and calculating the residual storable data time lengths of the first-class unit and the second-class unit according to the maximum stored data time lengths and the stored data time lengths of the first-class unit and the second-class unit.
When the residual storable data duration is used as a performance parameter, whether the storage unit is overloaded for storage or not is judged according to the duration for storing the valid data, so that the data safety can be effectively ensured, and the risk of data loss is reduced.
When the remaining erasable times are used as performance parameters, the updating frequency of the first type of data is greater than that of the second type of data, so that the service life of each storage unit of the storage system can be effectively balanced, and premature failure of the storage system caused by excessive use of a certain storage unit is avoided; when the residual erasable times are taken as performance parameters, the trust level of the first type of data is greater than that of the second type of data, so that the data with high trust level can be effectively stored, the data safety is ensured, and the risk of data loss is reduced.
When the time length of the residual storable data is taken as a performance parameter, the updating frequency of the first type of data is greater than that of the second type of data, so that the time length of the residual storable data of each storage unit of the storage system can be effectively balanced, and premature failure of the storage system caused by excessive use of a certain storage unit is avoided; when the time length of the residual storable data is taken as a performance parameter, the trust level of the first type of data is greater than that of the second type of data, so that the data with high trust level can be effectively stored, the data safety is ensured, and the risk of data loss is reduced.
From the above, the performance parameter threshold Q is dynamically adjusted according to the quantity threshold p. To ensure that a certain number of cells of a type is always maintained, the number threshold p may be set to a fixed constant, for example, the number threshold p satisfies p = [ N/10]. When the number n of cells of one type reaches a number threshold p, indicating that the number of cells of one type has reached a minimum limit, continued lowering will result in the storage system not being able to provide a sufficient number of cells of one type for storing data, thus lowering the threshold Q to increase the number n of cells of one type. Thus, the fact that the number n of memory cells of one type reaches the threshold number p of memory cells of one type constitutes a trigger condition for a dynamic decrease of the threshold value Q of the performance parameter.
In this application, the reduction range of the threshold Q of the memory system may be a fixed constant, or the reduction range may also be adaptively adjusted according to the current operating state of the memory cell, so as to optimize the performance of the memory to the maximum extent, for example, the reduction range δ satisfies: δ = f (Q, n, p), f (Q, n, p) being a function related to Q, n, p. Q is the current performance threshold, n is the number of class memory cells, and p is the number threshold. For example: f (Q, n, p) = i × Q + k × n + j × p. δ should vary with the variation of Q, n, p, so that the number n of memory cells of one type increases moderately each time the performance threshold Q is adjusted.
In the present application, a memory cell is changed from a first type cell to a second type cell when the performance parameter of the memory cell decreases from greater than a threshold value Q to below Q. In order to ensure effective processing of data and improve the utilization rate of the storage unit, when the type of the storage unit is changed, the data stored in the storage unit is transferred to other similar idle storage units. For example, in order to ensure that a first-class unit is used as much as possible to store first-class data so as to ensure efficient update frequency or security, in the present application, when the first-class unit is converted into a second-class unit, the data stored in the first-class unit is transferred to other idle first-class storage units; for example, in order to ensure that class two units are used as much as possible to store class two data, in the present application, when a class two unit is converted into a class one unit, the stored data is transferred to other idle class two storage units.
In consideration of the fact that the first-class unit stores the first-class data with better update frequency, trust level or data density than the second-class data stored by the second-class unit, the first-class unit and the second-class unit are configured as follows: the first type of unit is a Dynamic Random Access Memory (DRAM), and the second type of unit is a Storage Class Memory (SCM); or, the first-class unit is a Static Random Access Memory (SRAM), and the second-class unit is a storage-class memory (SCM); or the first-class unit is a static random access memory DRAM, and the second-class unit is a nonvolatile Flash memory NAND Flash; or the first type of unit is a dynamic random access memory (SRAM), and the second type of unit is a nonvolatile Flash memory NAND Flash; or the first-class unit is a storage-class memory SCM, and the second-class unit is a non-volatile Flash memory NAND Flash.
The application also relates to a bidirectional dynamic switching management method of the storage system, which comprises the steps of configuring a performance threshold Q and a quantity threshold p; detecting the performance parameters of the storage unit, and classifying the storage unit into a first-class unit when the performance parameters of the storage unit are larger than a threshold value Q, or classifying the storage unit into a second-class unit; the configuration method of the performance threshold Q comprises the following steps: when the number n of class-one cells reaches a number threshold p, the threshold Q is lowered to increase the number n of class-one cells so that the number n of class-one cells is not lower than the number threshold p.
The invention has the following beneficial effects:
(1) The dynamic management is carried out on each storage unit, so that premature failure caused by excessive use of a certain storage module can be avoided, and the service life of the storage is prolonged.
(2) According to the number n of the first-class units, the performance threshold Q is adaptively adjusted, the overall operation condition of the memory can be matched to the maximum extent, and efficient data processing is guaranteed.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, are included to provide a further understanding of the invention, and are included to illustrate an exemplary embodiment of the invention and not to limit the invention.
In the drawings:
FIG. 1 is a flow chart illustrating a controller configuring a performance threshold Q and differentiating between two types of memory cells according to an exemplary embodiment of the present invention.
Fig. 2 is a flowchart illustrating the controller controlling the performance threshold Q according to an exemplary embodiment of the present invention.
FIG. 3 is a flowchart illustrating a method for determining whether a type of cell changes a type of a memory cell by a controller according to an exemplary embodiment of the present invention.
FIG. 4 is a flowchart illustrating a method for determining whether a type of a memory cell is changed by a controller according to an exemplary embodiment of the present invention.
FIG. 5 is a block diagram of a storage system of a digital camera and an SD memory card according to an exemplary embodiment of the present invention.
Fig. 6 is a block diagram illustrating a storage system of a notebook computer and a solid state drive according to an exemplary embodiment of the present invention.
Detailed Description
The invention relates to a bidirectional dynamic switching storage system, which comprises a controller and N storage units, wherein N is more than or equal to 2, and the storage units are as follows: the data storage device comprises a first-class unit for storing at least one class of data, or a second-class unit for storing second-class data; the performance parameter of the first-class unit is greater than a threshold Q, and the performance parameter of the second-class unit is less than or equal to the threshold Q; the threshold Q is a dynamic threshold, and when the number n of the first-class units reaches a number threshold p, the threshold Q is decreased to increase the value of n so that the number n of the first-class units is not lower than the threshold p. The invention adjusts the management switching and data migration of the two types of units by designing the performance threshold and the quantity threshold, designs the dynamic adjustment of the performance threshold, can efficiently balance the service life of each storage unit, and ensures the efficient processing of data.
Based on the storage system with bidirectional dynamic switching, the invention also provides a bidirectional dynamic switching management method of the storage system, which solves the problems of configuring the performance threshold Q and the number threshold p, judging the types of the storage units, adjusting the number of the two types of the storage units and the like. The invention lays a deep foundation for realizing large-scale commercial application of a storage system with quick read-write response, sensitive response, long service life and simple algorithm.
The objects, features and advantages of the present invention will be illustrated by the following embodiments, which are only exemplary in the technical field of the present invention, and all technical solutions formed by equivalent substitutions or equivalent changes are within the scope of the present invention.
Example 1
The present embodiment relates to a storage system of a digital camera and an SD memory card, as shown in fig. 5. The storage units of the SD memory card can be divided into two types, wherein one type of storage unit stores data files with high trust levels, and the second type of storage unit stores data files with low trust levels. In this embodiment, the confidence level corresponds to the security requirement level of the photo data file, and the confidence level is higher when the security requirement level is higher, and vice versa.
The storage system of the embodiment realizes efficient storage of two types of storage units through one controller, and the overall management method is as shown in fig. 1. First, the first step is to count the performance parameters (the remaining storage data duration) of the N storage units. After the first step, executing a second step, judging whether the residual storage data duration of each storage unit is greater than a threshold value Q, and classifying the storage unit into a class unit if the residual storage data duration of each storage unit is greater than the threshold value Q; otherwise, the memory cell is classified as a class two cell. Thus, the storage position of the photo data file can be distinguished according to the reliability level of the shot photo, and the data with high reliability level can be effectively stored.
In this embodiment, the threshold Q is set as a dynamic adjustment value, and adaptive changes are performed according to the actual operation condition of the memory, so that the number of the first-type units and the second-type units can be dynamically adjusted, and the memory system can always keep enough two-type units for storing corresponding data. When the number of cells of one type n reaches a number threshold p, indicating that the number of cells of one type available has reached a tolerable limit, the threshold Q is decreased to increase the number of cells of one type n, enabling more cells of one type to be provided for use by the memory system, as shown in fig. 2. Therefore, the adaptive dynamic management of the performance threshold Q is beneficial to scientifically and comprehensively realizing the balance of the service life of each storage unit in each type of storage unit, different types of data can be distributed to the storage units according to the performance of the storage units to maximize the utilization rate of the storage units, the service life of a storage system can be greatly prolonged, the algorithm is simple, the pressure on a controller is low, and the occupied read-write resources are few.
In consideration of convenience of the camera and reduction of the operation amount of the controller, in this embodiment, the reduction range of Q is set to be a fixed constant, when the number n of the first-class units reaches a number threshold p, the threshold Q is triggered to be reduced to Q1 by a fixed range, and some of the second-class units with performance parameters larger than the threshold Q1 are changed from the second-class units to the first-class units, so as to increase the value of n, so that the number n of the first-class units is not lower than the number threshold p.
The flow of data migration when the classification of the storage unit changes is shown in fig. 3 and 4. First, the first step is to count the performance parameters of the first (second) type unit. After the first step, executing a second step, judging whether the performance parameter of the first (second) type storage unit is larger (smaller) than a threshold value Q, if so, the first (second) type storage unit is still the first (second) type storage unit; otherwise, the unit is judged as a type two (one) unit. After the second step, the third step is executed, and the data in the storage unit which becomes the second (first) type unit is migrated to other idle first (second) type units. Therefore, data safety can be effectively guaranteed, and the risk of data loss is reduced.
Example 2
The present embodiment relates to a storage system for a notebook computer and a solid state disk, as shown in fig. 6. The storage units of the solid state disk can be divided into two types, wherein one type of unit stores data files with high updating frequency, and the second type of unit stores data files with low updating frequency. In this embodiment, the computer system may allocate the storage unit for the data according to the update frequency of the data.
The storage system of the embodiment implements efficient storage of two types of storage units through a computer system, and the overall management method is as shown in fig. 1. First, the performance parameters (remaining times of erasing) of the N memory cells are counted. After the first step, executing a second step, judging whether the residual erasable times of each storage unit are greater than a threshold value Q, and classifying the storage unit into a class unit if the residual erasable times of each storage unit are greater than the threshold value Q; otherwise, the memory cell is classified as a class two cell. Therefore, the storage positions of the data files can be distinguished according to the update frequency of the storage data, and the data with high update frequency can be effectively stored.
In this embodiment, the threshold Q is set as a dynamic regulation value, and adaptive changes are performed according to the actual operation condition of the memory, so that the number of the first-type unit and the second-type unit can be dynamically adjusted, and the memory system can always keep enough two-type units for storing corresponding data. When the number of cells of one type n reaches a number threshold p, indicating that the number of cells of one type available has reached a tolerable limit, the threshold Q is decreased to increase the number of cells of one type n, enabling more cells of one type to be provided for use by the memory system, as shown in fig. 2. Therefore, the adaptive dynamic management of the performance threshold Q is beneficial to scientifically and comprehensively realizing the balance of the service life of each storage unit in each type of storage unit, different types of data can be distributed to the storage units according to the performance of the storage units to maximize the utilization rate of the storage units, the service life of a storage system can be greatly prolonged, the algorithm is simple, the pressure on a controller is low, and the occupied read-write resources are few.
In order to reduce the computation of the computer system, in this embodiment, the decreasing amplitude of Q is set as a fixed constant, when the number n of the first-class units reaches a number threshold p, the threshold Q is triggered to decrease to Q1 by a fixed amplitude, and part of the second-class units with performance parameters greater than the threshold Q1 is converted from the second-class units to the first-class units to increase the value of n, so that the number n of the first-class units is not lower than the number threshold p.
The flow of data migration when the classification of the storage unit is changed is shown in fig. 3 and 4. First, the first step is to count the performance parameters of the first (second) type unit. After the first step, executing a second step, judging whether the performance parameter of the first-class (second-class) storage unit is larger (smaller) than a threshold value Q, if so, the first-class (second-class) storage unit is still a first-class (second-class) unit; otherwise, the unit is determined as a type two (one) unit. After the second step, executing a third step, and migrating the data in the storage unit which becomes the first (second) type unit to other idle first (second) type units. Therefore, data safety can be effectively guaranteed, and the risk of data loss is reduced.
Claims (12)
1. A bidirectional dynamically switched memory system, comprising: n memory cell, N is greater than or equal to 2, the memory cell is:
a type of unit that stores at least one type of data, or,
a second type unit for storing the second type data;
the performance parameter of the first-class unit is greater than a threshold Q, and the performance parameter of the second-class unit is less than or equal to the threshold Q;
the controller is used for dynamically adjusting the threshold Q, and when the number n of the units of one class reaches a number threshold p, the threshold Q is reduced to increase the value of n, so that the number n of the units of one class is not lower than the number threshold p.
2. The storage system of claim 1, wherein the class one unit further stores class two data.
3. The storage system of claim 1, wherein the performance parameter of the storage unit is selected from the group consisting of: the remaining erasable times and the remaining time length of the stored data.
4. The storage system of claim 1, wherein the update frequency or trust level of one type of data is greater than that of a second type of data.
5. The storage system of claim 1, wherein a number threshold p is satisfied, p = f (N); f (N) is a function related to N.
6. The memory system of claim 1, wherein the magnitude of the decrease in the threshold Q is a fixed constant.
7. The memory system according to claim 1, wherein the magnitude δ of the reduction in the threshold qq satisfies:
δ = f (Q, n, p), f (Q, n, p) being a function related to Q, n, p.
8. The memory system of claim 1, wherein a memory cell transitions from a first type cell to a second type cell when the performance parameter of the memory cell decreases from greater than a threshold value Q to below Q.
9. The storage system according to claim 8, wherein the data stored by the storage unit is transferred to another type of unit.
10. The memory system of claim 1, wherein when the threshold Q is lowered to Q1, a portion of the class two cells having a performance parameter greater than the threshold Q1 are changed from the class two cells to the class one cells.
11. The storage system of claim 10, wherein the storage unit is configured to transfer data stored therein to other class two units.
12. A bidirectional dynamic switching management method of a storage system is characterized by comprising the following steps:
configuring a performance threshold Q and a quantity threshold p;
detecting the performance parameters of the storage unit, and classifying the storage unit into a first-class unit when the performance parameters of the storage unit are larger than a threshold value Q, or classifying the storage unit into a second-class unit;
the configuration method of the performance threshold Q comprises the following steps: when the number n of the class-one cells reaches a number threshold p, the threshold Q is decreased to increase the number n of the class-one cells so that the number n of the class-one cells is not lower than the threshold p.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105183661A (en) * | 2015-07-27 | 2015-12-23 | 联想(北京)有限公司 | Control method and electronic device |
| CN106201340A (en) * | 2016-06-29 | 2016-12-07 | 联想(北京)有限公司 | A kind of store the method for data, storage device, electronic equipment |
| CN106502578A (en) * | 2015-09-06 | 2017-03-15 | 中兴通讯股份有限公司 | Capacity change suggesting method and device |
| US20190339885A1 (en) * | 2018-05-07 | 2019-11-07 | Apple Inc. | Techniques for managing memory allocation within a storage device to improve operation of a camera application |
| US20200201573A1 (en) * | 2018-12-21 | 2020-06-25 | SK Hynix Inc. | Memory system and operation method thereof |
| CN113504880A (en) * | 2021-07-27 | 2021-10-15 | 群联电子股份有限公司 | Memory buffer management method, memory control circuit unit and storage device |
-
2022
- 2022-07-12 CN CN202210822408.1A patent/CN115373594A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105183661A (en) * | 2015-07-27 | 2015-12-23 | 联想(北京)有限公司 | Control method and electronic device |
| CN106502578A (en) * | 2015-09-06 | 2017-03-15 | 中兴通讯股份有限公司 | Capacity change suggesting method and device |
| CN106201340A (en) * | 2016-06-29 | 2016-12-07 | 联想(北京)有限公司 | A kind of store the method for data, storage device, electronic equipment |
| US20190339885A1 (en) * | 2018-05-07 | 2019-11-07 | Apple Inc. | Techniques for managing memory allocation within a storage device to improve operation of a camera application |
| US20200201573A1 (en) * | 2018-12-21 | 2020-06-25 | SK Hynix Inc. | Memory system and operation method thereof |
| CN113504880A (en) * | 2021-07-27 | 2021-10-15 | 群联电子股份有限公司 | Memory buffer management method, memory control circuit unit and storage device |
Non-Patent Citations (2)
| Title |
|---|
| 段欣欣等: "抗辐照相变存储器芯片温度适应性研究", 《信息科技》 * |
| 段欣欣等: "抗辐照相变存储器芯片温度适应性研究", 《信息科技》, 31 December 2019 (2019-12-31) * |
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