CN115056044A - Surface treatment method of gallium arsenide substrate - Google Patents
Surface treatment method of gallium arsenide substrate Download PDFInfo
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- CN115056044A CN115056044A CN202210732139.XA CN202210732139A CN115056044A CN 115056044 A CN115056044 A CN 115056044A CN 202210732139 A CN202210732139 A CN 202210732139A CN 115056044 A CN115056044 A CN 115056044A
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- Prior art keywords
- gallium arsenide
- arsenide substrate
- motor
- vacuum chuck
- magnetic pole
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title claims abstract description 86
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 86
- 239000000758 substrate Substances 0.000 title claims abstract description 84
- 238000000034 method Methods 0.000 title claims abstract description 25
- 238000004381 surface treatment Methods 0.000 title claims abstract description 16
- 238000000227 grinding Methods 0.000 claims abstract description 41
- 238000005498 polishing Methods 0.000 claims description 29
- 238000004140 cleaning Methods 0.000 claims description 15
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 12
- 239000002253 acid Substances 0.000 claims description 11
- 239000000126 substance Substances 0.000 claims description 8
- OEDMOCYNWLHUDP-UHFFFAOYSA-N bromomethanol Chemical compound OCBr OEDMOCYNWLHUDP-UHFFFAOYSA-N 0.000 claims description 6
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 9
- 230000008569 process Effects 0.000 abstract description 5
- 230000006872 improvement Effects 0.000 description 7
- 238000007688 edging Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910001651 emery Inorganic materials 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/02—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by distortion, beating, or vibration of the surface to be cleaned
- B08B7/026—Using sound waves
- B08B7/028—Using ultrasounds
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention discloses a surface treatment method of a gallium arsenide substrate, which comprises the following steps: firstly, edge chamfering is carried out on the edge of the gallium arsenide substrate by adopting an edge grinding device: firstly, adsorbing the gallium arsenide substrate in a third vacuum chuck, then starting a third motor, driving the gallium arsenide substrate to rotate through a connecting rod and the third vacuum chuck by the third motor, and finally abutting the edge of the gallium arsenide substrate on the side wall of a grinding wheel for grinding; and secondly, grinding two side surfaces of the gallium arsenide substrate by adopting a magnetic grinding device: the bottom side of the gallium arsenide substrate is adsorbed and fixed on the second vacuum chuck, then the second motor is started, the second motor drives the gallium arsenide substrate to be polished in the magnetic grinding material for minutes through the second telescopic cylinder and the second vacuum chuck, and then the second vacuum chuck is separated from the gallium arsenide substrate in the same way. The gallium arsenide surface treatment process has the advantages of simple flow, high treatment efficiency, convenient operation, safety, reliability, lower cost and convenient popularization.
Description
Technical Field
The invention relates to the technical field of gallium arsenide substrate surface treatment, in particular to a surface treatment method of a gallium arsenide substrate.
Background
Gallium arsenide surface treatment process, the purpose is to completely remove the micro-defects and surface damage layer left by the previous process on the wafer surface, so as to obtain a bright 'mirror' with good surface flatness.
The surface treatment of the gallium arsenide wafer comprises the working procedures of edging, grinding, polishing, cleaning and the like, but in the prior art, the gallium arsenide surface treatment process has the problems of complex flow, low efficiency, difficult control and the like, so a surface treatment method of the gallium arsenide substrate is needed to solve the problems.
Disclosure of Invention
The invention provides a surface treatment method of a gallium arsenide substrate, which aims to solve the problems in the background technology.
In order to achieve the purpose, the invention adopts the following technical scheme:
a surface treatment method of a gallium arsenide substrate comprises the following steps:
firstly, edge chamfering is carried out on the edge of the gallium arsenide substrate by adopting an edge grinding device: firstly, adsorbing the gallium arsenide substrate in a third vacuum chuck, then starting a third motor, driving the gallium arsenide substrate to rotate through a connecting rod and the third vacuum chuck by the third motor, and finally abutting the edge of the gallium arsenide substrate on the side wall of a grinding wheel for grinding;
and secondly, grinding two side surfaces of the gallium arsenide substrate by adopting a magnetic grinding device: firstly, the bottom side of a gallium arsenide substrate is adsorbed and fixed on a second vacuum chuck, then a second motor is started, the second motor drives the gallium arsenide substrate to be polished in a magnetic abrasive for 2 minutes through a second telescopic cylinder and the second vacuum chuck, then the second vacuum chuck is separated from the gallium arsenide substrate in the same way, the first vacuum chuck is adsorbed on the upper side wall of the gallium arsenide substrate, then a first motor is started, the first motor drives the gallium arsenide substrate to be polished in the magnetic abrasive for 2 minutes through the first telescopic cylinder and the first vacuum chuck, and then two side faces of the gallium arsenide substrate can be polished;
step three, polishing the gallium arsenide substrate: chemically polishing the ground gallium arsenide substrate in polishing solution, wherein the polishing solution is hydrogen peroxide, strong acid and bromomethanol solution;
fourthly, cleaning the gallium arsenide substrate: and placing the polished gallium arsenide substrate in cleaning equipment for cleaning.
As a further improvement scheme of the technical scheme: in the first step, the edging device includes third motor and emery wheel, fixedly connected with connecting rod on the output shaft of third motor, the one end fixedly connected with third vacuum chuck of connecting rod.
As a further improvement scheme of the technical scheme: in the second step, the magnetic grinding device comprises a first motor, a second motor, a first magnetic pole and a second magnetic pole, a first baffle fixedly connected to one side of the first magnetic pole and the second magnetic pole, a second baffle fixedly connected to the other side of the first magnetic pole and the second magnetic pole, magnetic grinding materials are filled between the first magnetic pole and the second magnetic pole, a first telescopic cylinder is fixedly connected to an output shaft of the first motor, an output end of the first telescopic cylinder penetrates through a side wall of the first baffle and is fixedly connected with a first vacuum chuck, and an output end of the second telescopic cylinder penetrates through a side wall of the second baffle and is fixedly connected with a second vacuum chuck.
As a further improvement scheme of the technical scheme: in the third step, the strong acid is concentrated sulfuric acid.
As a further improvement scheme of the technical scheme: and the chemical polishing mode in the third step is that the gallium arsenide substrate is placed in polishing solution to be cleaned in a reciprocating mode.
As a further improvement scheme of the technical scheme: the chemical polishing time in the third step was 6 minutes.
As a further improvement scheme of the technical scheme: in the third step, the mass concentration of hydrogen peroxide in the polishing solution is 55-64%, the volume concentration of strong acid is 10-23%, and the mass concentration of the strong acid and bromomethanol is 15-30%.
As a further improvement scheme of the technical scheme: and the cleaning equipment in the fourth step is an ultrasonic cleaning machine.
Compared with the prior art, the invention has the beneficial effects that:
the edge chamfering device is sequentially used for chamfering the edge of the gallium arsenide substrate, the magnetic grinding device is used for grinding two side faces of the gallium arsenide substrate, the chemical polishing is used for polishing the gallium arsenide substrate, the ultrasonic cleaning machine is used for cleaning the gallium arsenide substrate, and the surface treatment of the gallium arsenide substrate can be finished.
The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical solutions of the present invention more clearly understood and to implement them in accordance with the contents of the description, the following detailed description is given with reference to the preferred embodiments of the present invention and the accompanying drawings. The detailed description of the present invention is given in detail by the following examples and the accompanying drawings.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the invention and together with the description serve to explain the invention without limiting the invention. In the drawings:
fig. 1 is a schematic structural diagram of an edge grinding device in a surface treatment method of a gallium arsenide substrate according to the present invention;
fig. 2 is a schematic structural diagram of a magnetic polishing apparatus in the method for processing the surface of a gaas substrate according to the present invention.
In the drawings, the components represented by the respective reference numerals are listed below:
1. a first motor; 2. a first telescopic cylinder; 3. a first vacuum chuck; 4. a first baffle plate; 5. a magnetic abrasive; 6. a second vacuum chuck; 7. a first magnetic pole; 8. a second baffle; 9. a gallium arsenide substrate; 10. a second magnetic pole; 11. a second telescopic cylinder; 12. a second motor; 13. a grinding wheel; 14. a third motor; 15. a third vacuum chuck; 16. a connecting rod.
Detailed Description
The principles and features of this invention are described below in conjunction with the following drawings, which are set forth by way of illustration only and are not intended to limit the scope of the invention. The invention is described in more detail in the following paragraphs by way of example with reference to the accompanying drawings. Advantages and features of the present invention will become apparent from the following description and from the claims. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
It will be understood that when an element is referred to as being "secured to" another element, it can be directly on the other element or intervening elements may also be present. When a component is referred to as being "connected" to another component, it can be directly connected to the other component or intervening components may also be present. When a component is referred to as being "disposed on" another component, it can be directly on the other component or intervening components may also be present. The terms "vertical," "horizontal," "left," "right," and the like as used herein are for illustrative purposes only.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
Referring to fig. 1-2, in an embodiment of the invention, a method for processing a surface of a gaas substrate includes the following steps:
firstly, edge chamfering is carried out on the edge of the gallium arsenide substrate by adopting an edge grinding device: firstly, adsorbing the gallium arsenide substrate 9 in a third vacuum chuck 15, then starting a third motor 14, driving the gallium arsenide substrate 9 to rotate by the third motor 14 through a connecting rod 16 and the third vacuum chuck 15, and finally, abutting the edge of the gallium arsenide substrate 9 on the side wall of a grinding wheel 13 for grinding;
and secondly, grinding two side surfaces of the gallium arsenide substrate by adopting a magnetic grinding device: firstly, the bottom side of a gallium arsenide substrate 9 is adsorbed and fixed on a second vacuum chuck 6, then a second motor 12 is started, the second motor 12 drives the gallium arsenide substrate 9 to be polished in a magnetic grinding material 5 for 2 minutes through a second telescopic cylinder 11 and the second vacuum chuck 6, then the second vacuum chuck 6 is separated from the gallium arsenide substrate 9 in the same way, the first vacuum chuck 3 is adsorbed on the upper side wall of the gallium arsenide substrate 9, then a first motor 1 is started, the first motor 1 drives the gallium arsenide substrate 9 to be polished in the magnetic grinding material 5 for 2 minutes through the first telescopic cylinder 2 and the first vacuum chuck 3, and then two side faces of the gallium arsenide substrate 9 can be ground;
step three, polishing the gallium arsenide substrate: chemically polishing the ground gallium arsenide substrate in polishing solution, wherein the polishing solution is hydrogen peroxide, strong acid and bromomethanol solution;
fourthly, cleaning the gallium arsenide substrate: and placing the polished gallium arsenide substrate in cleaning equipment for cleaning.
Specifically, in the first step, edging device includes third motor 14 and emery wheel 13, fixedly connected with connecting rod 16 on the output shaft of third motor 14, and the one end fixedly connected with third vacuum chuck 15 of connecting rod 16.
Specifically, in the second step, the magnetic grinding device includes first motor 1, second motor 12, first magnetic pole 7 and second magnetic pole 10, the first baffle 4 of one side fixedly connected with of first magnetic pole 7 and second magnetic pole 10, the opposite side fixedly connected with second baffle 8 of first magnetic pole 7 and second magnetic pole 10, it has magnetism abrasive material 5 to fill between first magnetic pole 7 and the second magnetic pole 10, the first telescopic cylinder 2 of fixedly connected with on the output shaft of first motor 1, the output of first telescopic cylinder 2 runs through the lateral wall and the first vacuum chuck 3 of fixedly connected with of first baffle 4, the output of second telescopic cylinder 11 runs through the lateral wall and the fixedly connected with second vacuum chuck 6 of second baffle 8.
Specifically, in the third step, the strong acid is concentrated sulfuric acid.
Specifically, the chemical polishing mode in the third step is that the gallium arsenide substrate is placed in the polishing solution to be cleaned in a reciprocating manner.
Specifically, the chemical polishing time in the third step was 6 minutes.
Specifically, in the third step, the mass concentration of hydrogen peroxide in the polishing solution is 55-64%, the volume concentration of strong acid is 10-23%, and the mass concentration of the strong acid and bromomethanol is 15-30%.
Specifically, the cleaning device in the fourth step is an ultrasonic cleaning machine.
The working principle of the invention is as follows:
the surface of the gallium arsenide substrate can be strengthened by the magnetic grinding device, when the gallium arsenide substrate is polished, the residual tensile stress generated in the mechanical processing and grinding can be removed, the reserved compressive stress can be formed, the fatigue resistance of the gallium arsenide substrate can be greatly improved, meanwhile, in a magnetic field, magnetized magnetic grinding materials are non-rigidly fixed together by the acting force of the magnetic field and the magnetic attraction force among the magnetized magnetic grinding materials to form a grinding material brush, the shape of the grinding material brush can change along with the change of the shape of the gallium arsenide substrate in the processing process, the grinding material brush shows excellent flexibility and adaptability, then the gallium arsenide substrate is polished by chemical polishing in sequence, an ultrasonic cleaning machine is used for cleaning the gallium arsenide substrate, and the surface processing of the gallium arsenide substrate can be completed.
The foregoing is merely a preferred embodiment of the invention and is not intended to limit the invention in any manner; the present invention may be readily implemented by those of ordinary skill in the art as illustrated in the accompanying drawings and described above; however, those skilled in the art should appreciate that they can readily use the disclosed conception and specific embodiments as a basis for designing or modifying other structures for carrying out the same purposes of the present invention without departing from the scope of the invention as defined by the appended claims; meanwhile, any changes, modifications, and evolutions of the equivalent changes of the above embodiments according to the actual techniques of the present invention are still within the protection scope of the technical solution of the present invention.
Claims (8)
1. A surface treatment method of a gallium arsenide substrate is characterized by comprising the following steps:
firstly, edge chamfering is carried out on the edge of the gallium arsenide substrate by adopting an edge grinding device: firstly, adsorbing a gallium arsenide substrate (9) in a third vacuum chuck (15), then starting a third motor (14), driving the gallium arsenide substrate (9) to rotate by the third motor (14) through a connecting rod (16) and the third vacuum chuck (15), and finally, abutting the edge of the gallium arsenide substrate (9) on the side wall of a grinding wheel (13) for grinding;
and secondly, grinding two side surfaces of the gallium arsenide substrate by adopting a magnetic grinding device: firstly, the bottom side of a gallium arsenide substrate (9) is adsorbed and fixed on a second vacuum chuck (6), then a second motor (12) is started, the second motor (12) drives the gallium arsenide substrate (9) to be polished in a magnetic abrasive (5) for 2 minutes through a second telescopic cylinder (11) and the second vacuum chuck (6), then the second vacuum chuck (6) is separated from the gallium arsenide substrate (9) in the same way, a first vacuum chuck (3) is adsorbed on the upper side wall of the gallium arsenide substrate (9), then a first motor (1) is started, the first motor (1) drives the gallium arsenide substrate (9) to be polished in the magnetic abrasive (5) for 2 minutes through a first telescopic cylinder (2) and the first vacuum chuck (3), and then two side faces of the gallium arsenide substrate (9) can be polished;
step three, polishing the gallium arsenide substrate: chemically polishing the ground gallium arsenide substrate in polishing solution, wherein the polishing solution is hydrogen peroxide, strong acid and bromomethanol solution;
fourthly, cleaning the gallium arsenide substrate: and placing the polished gallium arsenide substrate in cleaning equipment for cleaning.
2. The method for processing the surface of a gallium arsenide substrate according to claim 1, wherein in the first step, the edge grinding device comprises a third motor (14) and a grinding wheel (13), a connecting rod (16) is fixedly connected to an output shaft of the third motor (14), and a third vacuum chuck (15) is fixedly connected to one end of the connecting rod (16).
3. The surface treatment method of a gallium arsenide substrate according to claim 1, wherein in the second step, the magnetic grinding device comprises a first motor (1), a second motor (12), a first magnetic pole (7) and a second magnetic pole (10), a first baffle (4) is fixedly connected to one side of the first magnetic pole (7) and one side of the second magnetic pole (10), a second baffle (8) is fixedly connected to the other side of the first magnetic pole (7) and the other side of the second magnetic pole (10), a magnetic abrasive (5) is filled between the first magnetic pole (7) and the second magnetic pole (10), a first telescopic cylinder (2) is fixedly connected to the output shaft of the first motor (1), the output end of the first telescopic cylinder (2) penetrates through the side wall of the first baffle (4) and is fixedly connected with a first vacuum chuck (3), and the output end of the second telescopic cylinder (11) penetrates through the side wall of the second baffle (8) and is fixedly connected with a second vacuum chuck (c/a) 6).
4. The method of claim 1, wherein in the third step, the strong acid is concentrated sulfuric acid.
5. The method of claim 1, wherein the chemical polishing in the third step is performed by moving the GaAs substrate back and forth in a polishing solution.
6. The method of claim 1, wherein the chemical polishing time in the third step is 6 minutes.
7. The method for processing the surface of a gallium arsenide substrate as recited in claim 1, wherein the polishing solution in the third step has a mass concentration of 55-64% hydrogen peroxide, a volume concentration of 10-23% strong acid, and a mass concentration of 15-30% bromomethanol.
8. The method of claim 1, wherein the cleaning device in the fourth step is an ultrasonic cleaning machine.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210732139.XA CN115056044A (en) | 2022-06-23 | 2022-06-23 | Surface treatment method of gallium arsenide substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210732139.XA CN115056044A (en) | 2022-06-23 | 2022-06-23 | Surface treatment method of gallium arsenide substrate |
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| Publication Number | Publication Date |
|---|---|
| CN115056044A true CN115056044A (en) | 2022-09-16 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210732139.XA Pending CN115056044A (en) | 2022-06-23 | 2022-06-23 | Surface treatment method of gallium arsenide substrate |
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3738882A (en) * | 1971-10-14 | 1973-06-12 | Ibm | Method for polishing semiconductor gallium arsenide planar surfaces |
| US4832761A (en) * | 1985-08-26 | 1989-05-23 | Itt Gallium Arsenide Technology Center, A Division Of Itt Corporation | Process for manufacturing gallium arsenide monolithic microwave integrated circuits using nonphotosensitive acid resist for handling |
| CN1947944A (en) * | 2006-08-11 | 2007-04-18 | 周海 | Technique for nanometer grade super smooth processing gallium phosphide wafer |
| CN103192297A (en) * | 2012-08-24 | 2013-07-10 | 广东工业大学 | Combined machining method for chemistry cluster magneto-rheological of monocrystal silicon carbide wafer |
| CN104952701A (en) * | 2015-05-13 | 2015-09-30 | 北京通美晶体技术有限公司 | Special-shaped semiconductor wafer and preparation method thereof |
| CN105382676A (en) * | 2015-11-17 | 2016-03-09 | 广东先导半导体材料有限公司 | Method for polishing gallium arsenide wafer |
| CN106340447A (en) * | 2016-10-25 | 2017-01-18 | 山东浪潮华光光电子股份有限公司 | Chemical polishing method for gallium arsenide substrate |
| CN107523220A (en) * | 2017-08-04 | 2017-12-29 | 北京交通大学 | Magnetorheologicai polishing liquid for GaAs polishing and preparation method thereof |
| CN113206007A (en) * | 2021-04-30 | 2021-08-03 | 中锗科技有限公司 | Preparation method of indium phosphide substrate |
-
2022
- 2022-06-23 CN CN202210732139.XA patent/CN115056044A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3738882A (en) * | 1971-10-14 | 1973-06-12 | Ibm | Method for polishing semiconductor gallium arsenide planar surfaces |
| US4832761A (en) * | 1985-08-26 | 1989-05-23 | Itt Gallium Arsenide Technology Center, A Division Of Itt Corporation | Process for manufacturing gallium arsenide monolithic microwave integrated circuits using nonphotosensitive acid resist for handling |
| CN1947944A (en) * | 2006-08-11 | 2007-04-18 | 周海 | Technique for nanometer grade super smooth processing gallium phosphide wafer |
| CN103192297A (en) * | 2012-08-24 | 2013-07-10 | 广东工业大学 | Combined machining method for chemistry cluster magneto-rheological of monocrystal silicon carbide wafer |
| CN104952701A (en) * | 2015-05-13 | 2015-09-30 | 北京通美晶体技术有限公司 | Special-shaped semiconductor wafer and preparation method thereof |
| CN105382676A (en) * | 2015-11-17 | 2016-03-09 | 广东先导半导体材料有限公司 | Method for polishing gallium arsenide wafer |
| CN106340447A (en) * | 2016-10-25 | 2017-01-18 | 山东浪潮华光光电子股份有限公司 | Chemical polishing method for gallium arsenide substrate |
| CN107523220A (en) * | 2017-08-04 | 2017-12-29 | 北京交通大学 | Magnetorheologicai polishing liquid for GaAs polishing and preparation method thereof |
| CN113206007A (en) * | 2021-04-30 | 2021-08-03 | 中锗科技有限公司 | Preparation method of indium phosphide substrate |
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