CN114995038A - Projection system and three-dimensional measurement module comprising same - Google Patents
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- G—PHYSICS
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- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B21/00—Projectors or projection-type viewers; Accessories therefor
- G03B21/14—Details
- G03B21/20—Lamp housings
- G03B21/208—Homogenising, shaping of the illumination light
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
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- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
- G02B27/0916—Adapting the beam shape of a semiconductor light source such as a laser diode or an LED, e.g. for efficiently coupling into optical fibers
- G02B27/0922—Adapting the beam shape of a semiconductor light source such as a laser diode or an LED, e.g. for efficiently coupling into optical fibers the semiconductor light source comprising an array of light emitters
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Abstract
The embodiment of the application provides a projection system and a three-dimensional measurement module comprising the same, and belongs to the technical field of three-dimensional measurement. The projection system comprises a radiation source array comprising randomly arranged radiation sources for providing a randomly distributed radiation signal; and an amplified replicator array disposed on a light exit side of the radiation source array; the amplification duplicator array comprises amplification duplicators arranged in an array; the amplified replicator includes a plurality of superstructure units; wherein the nanostructure element comprises at least one nanostructure and a substrate underlying the at least one nanostructure; and the nanostructure array in the magnifying replicator is arranged on one side of the substrate; wherein the amplification replicator is capable of modulating the radiation signals, amplifying and projecting the radiation signals in an array to a target surface based on the phase and arrangement of the metamaterial units. The projection system has simple and compact structure and low weight, and the diffraction efficiency can reach more than 90 percent.
Description
Technical Field
The application relates to the technical field of three-dimensional measurement, in particular to a projection system and a three-dimensional measurement module comprising the same.
Background
Structured light measurement is one of the important means in three-dimensional measurement technology, and is active optical measurement. Typically, light is structured and projected with a projection system to the surface of an object in a specific shape (point, line, plane or other pattern), and then the structured light shift distance is detected to obtain three-dimensional information of the object.
In the conventional structured light device, the projection system at least includes a light source, a collimating lens group and a Diffractive Optical Element (DOE). After being collimated by the collimating lens group, light emitted by the light source generates a lattice by a Diffraction Optical Element (DOE) and is transmitted to a far field.
A projection system in the prior art is composed of at least three optical components, i.e., at least two collimating lens groups and a diffractive optical element. This configuration makes it difficult for the projection system to simultaneously meet the requirements of compactness, lightness, high performance and low cost. And therefore, the compatibility of the three-dimensional measurement module with consumer electronics that pursue miniaturization, weight reduction, and low cost is limited.
Disclosure of Invention
In order to solve the problem that projection system receives optical element quantity and structural limitation among the prior art, this application embodiment provides a projection system and contains its three-dimensional measurement module.
In a first aspect, an embodiment of the present application provides a projection system, including:
a radiation source array comprising randomly arranged radiation sources for providing a randomly distributed radiation signal; and the number of the first and second groups,
the amplification duplicator array is arranged on the light-emitting side of the radiation source array;
the amplification duplicator array comprises amplification duplicators arranged in an array; the amplification duplicator comprises a superstructure unit arranged in an array;
wherein the nanostructure element comprises at least one nanostructure and a substrate underlying the at least one nanostructure; and the nanostructure array in the magnifying replicator is arranged on one side of the substrate;
based on the phase and arrangement of the metamaterial units, the amplification duplicator can modulate the radiation signals, amplify the radiation signals and project the radiation signals to a target surface in an array.
Optionally, the nanostructures in the magnifying replicator are arranged in a pattern array of close-packed patterns;
the nanostructures are disposed at vertex positions and/or center positions of the close-packed pattern.
Optionally, the magnified replicators in the magnified replicator array are arranged in an array of a x B patterns;
wherein, the values of A and B are both more than or equal to 3.
Optionally, the magnified replicators in the magnified replicator array are arranged in an array of a x B patterns;
wherein, the values of A and B are both more than or equal to 5.
Optionally, a and B of the amplified replicator array are equal in value.
Optionally, a and B values of the amplified replicator array are unequal.
Optionally, the close-packed pattern comprises regular hexagons, squares, or sectors.
Optionally, the radiation source comprises a vertical cavity surface emitting laser or an edge emitting laser.
Optionally, the amplifying duplicator is a diffraction beam splitter, and light rays emitted by any one of the radiation sources are diffracted to a plurality of corresponding directions after passing through any one of the amplifying duplicators, so as to form a dot matrix unit; and after the light rays of the radiation source array pass through the amplification duplicator array, the lattice unit array is arranged.
Optionally, the phase of any one of the amplified replicators is calculated by an iterative fourier algorithm or a GS algorithm from a lattice form of the corresponding target.
Optionally, the phase of any one of the amplified replicators is calculated by an iterative fourier algorithm or a GS algorithm from a lattice form of the corresponding target based on the phase set by each of the super-structuring elements.
Optionally, the computing comprises frequency domain equidistant computing or space domain equidistant computing.
Optionally, in any of the magnifying replicators, the diffraction angles corresponding to different diffraction orders thereof are the same.
Optionally, the angle θ of light entering the amplified replica array and the period P of the superstructure unit SU The following relationship is satisfied:
in the formula, λ is an operating wavelength.
Optionally, the radiation source and the magnifying replicator are combined by a wafer level package.
Optionally, the magnifying replicator is a transmissive superlens;
and the radiation source array and the magnifying replicator array are arranged coaxially.
Optionally, the magnifying replicator is capable of forming an afocal optical system for the radiation signal, or
The magnifying replicator has a positive focal length for the radiation signal, the exit face of the radiation source being located in an object focal plane of the magnifying replicator.
Optionally, the length of a side of adjacent amplified replicators is at least sufficient to:
D n-2 +D n-1 ＝4h
wherein h is one half of the length of the radiation source; n is the number of the amplification duplicators, and n is more than or equal to 2; and D is the side length of the amplification duplicator.
Optionally, any three consecutive amplified replicators in any row or any column of the amplified replicator array includes a first amplified replicator, a second amplified replicator, and a third amplified replicator, and at least:
D 0 +D 1 ＝4h
D 1 +D 2 ＝4h
wherein h is one half of the length of the radiation source array; d 0 、D 1 、D 2 Side lengths of the first amplified replica, the second amplified replica, and the third amplified replica, respectively.
Optionally, the phase of the amplified replica satisfies at least any of the following equations:
in the formula, a i Is the phase coefficient, λ is the wavelength, r is the distance from the center of the nanostructure in the amplified replica to the center of the amplified replica, x, y are the coordinates of the surface of the amplified replica, f ML Is the focal length of the magnifying replicator.
In a second aspect, an embodiment of the present application further provides a three-dimensional measurement module, where the three-dimensional measurement module includes the projection system provided in any of the above embodiments.
The technical scheme provided by the embodiment at least achieves the following beneficial effects:
according to the projection system and the three-dimensional measurement module comprising the same, through the radiation sources which are arranged randomly and the amplification duplicators comprising a plurality of super-structure units, the signals emitted by the radiation sources are amplified and projected to the surface of the target in an array form through the phases and the arrangement modes of the super-structure units. The magnifying replicator is a monolithic structure comprising nanostructures and an underlying substrate, and is structurally simple, lightweight, and cost-effective compared to a transfer projection device. The projection system that this application embodiment provided and contain its three-dimensional measurement module do not contain the DOE, have avoided the spurious interference that inevitable high-order diffraction arouses in the DOE, have improved light energy utilization and have rateed, have increased the SNR of far field point cloud. The amplification duplicator enables the projection efficiency to reach more than 90% through the super-structure units arranged in an array, and the projection distance of the projection system is far beyond that of the traditional DOE, so that the energy consumption of the projection system is reduced.
Drawings
The accompanying drawings are included to provide a further understanding of the application and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the application and, together with the description, serve to explain the principles of the application.
FIG. 1 is a schematic diagram of a projection system provided by an embodiment of the present application;
FIG. 2 is a schematic diagram of an alternative configuration of a projection system provided by an embodiment of the present application;
FIG. 3 is a schematic diagram illustrating an alternative configuration of a projection system provided by an embodiment of the present application;
FIG. 4 is a schematic diagram illustrating an alternative structure of a superstructure unit provided by an embodiment of the present application;
FIG. 5 is a schematic diagram illustrating an alternative structure of a superstructure unit provided by an embodiment of the present application;
FIG. 6 shows a phase relationship and transmittance relationship at a wavelength band of 940nm for an alternative nanostructure provided by embodiments of the present application;
FIG. 7 is an alternative schematic diagram of the arrangement of nanostructures in the projection system of FIG. 2;
FIG. 8 is a schematic diagram illustrating yet another alternative arrangement of nanostructures in the projection system of FIG. 2;
FIG. 9 is a schematic diagram illustrating yet another alternative arrangement of nanostructures in the projection system of FIG. 2;
FIG. 10 shows the object image relationship of an enlarged replicator array in the projection system shown in FIG. 2;
FIG. 11 shows an alternative projection schematic of an enlarged replicator array in the projection system shown in FIG. 2;
FIG. 12 is a schematic diagram of an alternative construction of an enlarged replicator array of the projection system shown in FIG. 3;
FIG. 13 shows a diffraction diagram and corresponding parameters for an enlarged replicator array in the projection system as shown in FIG. 12;
FIG. 14 shows the relationship of the angle of the incident radiation to the optical axis and the diffraction order of the magnifying replica array for the projection system shown in FIG. 13;
FIG. 15 shows a far field lattice corresponding to an alternative configuration of the projection system shown in FIG. 2;
FIG. 16 shows a far field lattice corresponding to an alternative configuration of the projection system shown in FIG. 3.
The reference numerals in the drawings denote:
1-a radiation source array, 2-a magnified replicator array, 3-a target surface;
21-diffractive beam splitter, 22-transmissive superlens; 210-a first amplified duplicator; 220-a second amplified duplicator; 230-a third amplified duplicator;
211-an amplified replicator;
2111-substrate, 2112-nanostructure, 2113-filler.
Detailed Description
The present application will now be described more fully hereinafter with reference to the accompanying drawings, in which embodiments are shown. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art. Like reference numerals refer to like parts throughout. Also, in the drawings, the thickness, ratio and size of the components are exaggerated for clarity of illustration.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting. As used herein, "a," "an," "the," and "at least one" do not denote a limitation of quantity, but rather are intended to include both the singular and the plural, unless the context clearly indicates otherwise. For example, "a component" means the same as "at least one component" unless the context clearly dictates otherwise. "at least one of" should not be construed as limited to the quantity "one". "or" means "and/or". The term "and/or" includes any and all combinations of one or more of the associated listed items.
Unless otherwise defined, all terms used herein, including technical and scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art. Terms defined in commonly used dictionaries should be interpreted as having the same meaning as is in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
The meaning of "comprising" or "comprises" indicates a property, a quantity, a step, an operation, a component, a part, or a combination thereof, but does not exclude other properties, quantities, steps, operations, components, parts, or combinations thereof.
Embodiments are described herein with reference to cross-sectional views that are idealized embodiments. Thus, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, embodiments described herein should not be construed as limited to the particular shapes of regions as illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, regions shown or described as flat may typically have rough and/or nonlinear features. Also, the acute angles shown may be rounded. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the precise shape of a region and are not intended to limit the scope of the claims.
Hereinafter, exemplary embodiments according to the present application will be described with reference to the accompanying drawings.
Most three-dimensional measurement modules in the prior art have structured light that forms a lattice in the far field. The lattice formation of the aforementioned three-dimensional measurement module must rely on Diffractive Optical Elements (DOEs). However, most conventional DOEs are second order diffractive optical elements, and the diffraction efficiency of such DOEs is low, generally not exceeding 50%. This also causes the defects of high energy consumption, short projection distance and insufficient effective detection of the three-dimensional measurement module in the prior art. And, because of the restriction of diffraction efficiency, the projection distance and the effective detection distance of the three-dimensional measurement module in the prior art have been difficult to increase. The high energy consumption limits the compatibility of the three-dimensional measurement module with consumer electronics equipment, and the short projection distance and effective detection distance limit the application scenarios of the three-dimensional measurement module.
Therefore, in the prior art, the projection system of the three-dimensional measurement module has a complex structure, and is difficult to miniaturize, lighten and reduce the cost, and the popularization and application of the three-dimensional measurement module are limited due to the low DOE diffraction efficiency.
In view of the above-mentioned drawbacks of the conventional three-dimensional measurement module, the embodiments of the present application provide a projection system based on the super-surface technology, as shown in fig. 1 to 3. The super surface is a structured interface composed of array-arranged super structural units. The nanostructure in the super-structure unit is a sub-wavelength structure, so that the phase mutation of incident light is caused, and the polarization, amplitude and phase of the incident light are modulated.
In particular, the projection system comprises a radiation source array 1 and an amplified replicator array arranged at the light exit side of the radiation source array 1. The radiation source array 1 comprises a random arrangement of radiation sources for providing a random distribution of radiation signals. The random arrangement in the embodiments of the present application is for a standard arrangement, such as a non-uniform arrangement. The magnified replicator array includes an arrayed magnified replicator including arrayed Meta-units (Meta-Atom). Wherein the nanostructure element comprises at least one nanostructure 2112 and an underlying substrate 2111. Also, the array of nanostructures 2112 in the magnifying replicator described above is arranged on one side of the substrate 2111. It should be noted that the amplification copier array 2 provided in the embodiment of the present application may be a one-dimensional line array or a two-dimensional area array. That is, the amplified copier array 2 includes a × B amplified copiers, each of a and B being a natural number greater than zero. A and B are the number of rows and columns, respectively, of the amplified copier array 2. Compared with the radiation sources arranged regularly, the radiation sources arranged randomly can improve the resolution and far-field accuracy of three-dimensional measurement by structured light by forming a random lattice on the target surface 3.
Fig. 1 shows a schematic diagram of a projection system provided in an embodiment of the present application. Fig. 4 shows an alternative structural schematic diagram of a superstructure unit provided by an embodiment of the present application. Fig. 5 shows a schematic structural diagram of a further alternative superstructure unit provided by an embodiment of the present application. Referring to fig. 1, based on the phase and arrangement of the above-mentioned superstructure units, the amplification duplicator provided by the embodiment of the present application can modulate the radiation signal emitted by the above-mentioned radiation source, so that the radiation signal is amplified and transmitted to the target surface to be detected in the form of an array.
According to the implementation mode of the present application, the size and the arrangement of the nanostructures of the superstructure unit provided by the embodiments of the present application can be precisely designed according to the lattice required by the design. The size of the nanostructure is related to its phase. Fig. 6 is a graph showing a relationship between phase, transmittance and diameter of a nanostructure in a 940nm wavelength band, where the nanostructure in fig. 6 is a nano-pillar. Exemplarily, the distribution parameters of the lattice are determined according to the design requirements, the phase and the arrangement mode of the superstructure unit are determined according to the distribution parameters of the lattice, and the size of the nanostructure is determined according to the relationship among the phase, the transmittance and the size of the superstructure unit.
According to an embodiment of the present application, the radiation source comprises a Vertical Cavity Surface Emitting Laser (VCSEL) or an Edge Emitting Laser (EEL).
Fig. 2 and fig. 3 respectively show two alternative structural schematic diagrams of a projection system provided by an embodiment of the present application. As shown in fig. 2, the randomly distributed signals from the radiation source array 1 are transmitted through the amplified replicator array 2 to produce a random lattice in the far field. Alternatively, as shown in fig. 2, each of the magnifying replicator arrays 2 is a transmissive superlens 22. The magnifying replicator array 2 is disposed coaxially with the radiation source array 1.
Without being bound by any theory, compared with the conventional DOE, the phase of the amplified replica array 2 provided by the embodiment of the present application is continuous and the direct projection type projection is adopted, so that the projection efficiency can reach more than 90%.
According to an embodiment of the present application, referring to fig. 7-9, the nanostructures in the magnifying replicator of the projection system are arranged in a pattern array of a close-packed pattern. The nanostructures are disposed at the vertex positions and/or the center positions of the close-packed pattern. As shown in fig. 7, according to an embodiment of the present application, the close-packed pattern may have a fan shape. As shown in fig. 8, according to an embodiment of the present invention, the close-packed pattern may be a regular hexagon. Further, as shown in fig. 9, according to an embodiment of the present application, the close-packed pattern may be a square. Those skilled in the art will recognize that the nanostructures of the magnifying replicator in the projection system as shown in fig. 2 may also comprise other forms of array arrangements, and all such variations are within the scope of the present application.
According to an embodiment of the present application, optionally, the magnifying replicator array 2 forms an afocal optical system for the radiation signal; or the magnifying replicator array 2 has a positive focal length for the radiation signal and the exit face of the radiation source array 1 is located at the focal plane of the magnifying replicator array.
Fig. 10 is an alternative object-image relationship diagram of an enlarged replicator in a projection system provided by an embodiment of the present application. Referring to fig. 10, the present embodiment provides a projection system in which the radiation source array 1 and the magnifying replicator array 2 satisfy at least the relationship in equation (1).
Where u is the object distance of the magnifying copier array 2, v is the image distance of the magnifying copier array 2, and f is the focal length of the magnifying copier array 2. Alternatively, in order to reduce the size of the projection system provided by the embodiments of the present application, the focal length of the magnifying replicator array 2 is smaller. Preferably, the focal length of the magnifying replicator array 2 satisfies 1mm ≦ f ≦ 3 mm. Typically, the projection system forms a random dot matrix that is greater than 10 centimeters from the magnifying replicator (i.e., image distance). Thus, in combination with equation (1), u ≈ f, i.e., the radiation source array 1 is located on the object focal plane of the magnified replicator array 2.
Fig. 11 shows an alternative projection diagram of an enlargement replicator in a projection system as shown in fig. 2. In the embodiment of the present application, the number of the amplification copiers in the amplification replication array is odd in consideration of the symmetry of the amplification replication array 2. In fig. 11, a and B represent two point light sources, respectively, and a 'and B' are images corresponding to a and B, respectively.
Further, in order to ensure that in the image space of the magnified copier array 2, the dot matrix at the position of the different distance from the magnified copier array 2 along the optical axis direction is a similar pattern, and the dot matrix units at the different distances are also similar patterns. When the distance between the dot matrix and the magnified copier array is changed, the dot matrix unit adjacent to the dot matrix is not overlapped (overlapped) and the gap (gap) between the dot matrix unit adjacent to the dot matrix unit is not changed. That is, adjacent lattice elements do not overlap or diverge as the projection distance varies. To this end, adjacent emergent radiation corresponding to adjacent amplified replicas in amplified replica array 2 is parallel, e.g. θ is shown in FIG. 11 0 ＝θ 1 And theta 2 ＝θ 3 . Alternatively, the edge length of adjacent amplified duplicators in the amplified duplicator array 2 at least satisfies:
D n-2 +D n-1 ＝4h (2)
wherein h is one half of the length of the radiation source array 1; n is the number of any row or any column in the amplified duplicator array 2, and n is more than or equal to 2; d is the side length of the amplified replicator.
For example, as shown in fig. 11, any three consecutive amplified duplicators in any row or any column of the amplified duplicator array 2 include a first amplified duplicator, a second amplified duplicator, and a third amplified duplicator.
Wherein the first amplified replica 210, the second amplified replica 220 and the third amplified replica 230 at least satisfy:
D 0 +D 1 ＝4h (3)
D 1 +D 2 ＝4h (4)
wherein h is one half of the length of the radiation source array 1; d 0 、D 1 、D 2 The side lengths of the first amplified replica 210, the second amplified replica 220 and the third amplified replica 230, respectively.
According to an embodiment of the present application, optionally, in the projection system shown in fig. 2, 7 to 11, the phase of any one of the amplified duplicators in the amplified duplicator array 2 satisfies at least any one of the following equations (5-1) to (5-5):
wherein, a i λ is the wavelength, r is the distance from the center of the nanostructure 2112 in the amplified replica to the center of the amplified replica, and x, y are the amplified replicasCoordinates on the machine, f ML To amplify the focal length of the replicator.
In the direct transmission amplified replicator described above, the size of the individual amplified replicator is no smaller than the size of the individual radiation source.
Example 1
The above is a projection system based on the structure shown in fig. 2, and the projection system shown in fig. 3 will be described next.
As shown in fig. 3 and 12, the amplification copy device array in the projection system provided by the embodiment of the present application includes amplification copy devices 211 arranged in an a × B array. Each amplified replicator comprising nanostructures arranged in an array; wherein, the values of A and B are both more than or equal to 3. Optionally, a and B both take a value of 5 or more. In some embodiments, a and B are equal in value. In still other embodiments, A and B take on different values.
Specifically, as shown in fig. 3, the amplifying replica 211 is a diffraction beam splitter 21, and when a light beam emitted from the radiation source passes through any one of the amplifying replicas 211, the light beam is diffracted to a predetermined diffraction direction vector θ according to the phase of each super-structure unit SU Thereby forming a lattice at different areas of the target surface to be detected. That is, eitherThe magnifying replicator may diffract incident light into m n directions, m and n being natural numbers other than a and B. The values of m and n are related to the design requirements and are not limited by A and B. For example, any magnifying replicator may diffract incident light to split off m × n diffraction spots, m and n illustratively each equaling 11, while the array of magnifying replicators may be 1000 × 500.
After passing through any amplification duplicator, the light rays emitted by any radiation source are diffracted to a plurality of corresponding directions to form a dot matrix unit. For example, the light emitted from the randomly arranged light sources is diffracted by the single magnifying replicator to form randomly arranged lattice elements. The light rays emitted by the randomly arranged light sources are diffracted by the amplifying duplicators of the arrays to form a plurality of array lattice units.
Illustratively, the light emitted by the randomly arranged radiation sources is diffracted by any amplifying duplicator to form randomly arranged light spots and form lattice units, and the randomly arranged light spots are diffracted by the amplifying duplicator array to form a plurality of lattice units arranged in an array. The arrangement of spots in any lattice element is formed by the convolution of the spot columns of the radiation sources in the radiation source array with the phase of the magnifying replicator. Without being bound by any theory, compared with the conventional DOE, the amplification replicator array 2 provided by the embodiment of the application diffracts incident light to different directions through the nano structures arranged in the array, so that the diffraction efficiency can reach over 90% without being interfered by stray light generated by high-order diffraction.
Optionally, the values of A and B in any amplified duplicator array are the same, so that the design and processing difficulty is lower; optionally, the values of a and B in any amplified replicator array are different, and the degree of freedom of the design is higher. It is understood that the amplification copy device array provided by the embodiment of the present application amplifies a signal of incident light by diffraction, and copies a lattice unit formed by a single amplification copy device into an array of lattice units.
According to the embodiment of the present application, optionally, based on the phase set by each super-structure unit, the phase of the amplification replicator provided by the embodiment of the present application is calculated by an Iterative Fourier Transform (IFTA) Algorithm or a GS Algorithm in a lattice form of the corresponding target. The GS algorithm refers to Gerchberg-Saxton (GS) algorithm and its improved algorithm. Optionally, the aforementioned calculations comprise frequency domain (k-space) equidistant calculations or space domain (x, y-space) equidistant calculations.
Fig. 13 is a schematic diagram illustrating a single magnifying replicator provided by an embodiment of the present application employing spatial domain equidistant computation. Alternatively, the light field distribution of the lattice at the image plane of the magnifying replicator is calculated using scalar diffraction methods, as shown in equations (6-1) to (6-3):
wherein FFT is Fourier variation, lambda is working wavelength, u 1 (u, v) represents the light field distribution on the observation surface, and α, β, and γ are angular coordinates, respectively. As shown in fig. 13, unlike the frequency domain equidistant spacing of the two-dimensional grating, the spatial domain equidistant spacing algorithm optionally adopted by the amplification duplicator provided in the embodiment of the present application eliminates the pincushion distortion of the diffraction lattice.
According to embodiments of the present application, optionally, as shown in fig. 14, the diffraction angles θ corresponding to different diffraction orders of the replicator array are enlarged D Diffraction angle theta to a single magnifying replicator SU The same is true. In order to ensure that the patterns diffracted by the randomly arranged radiation sources in the radiation source array 1 to the far field have no overlap or no spacing, the angle between the light rays emitted from the edge of the radiation source array and the optical axis, and the diffraction order, need to satisfy the relationship shown in fig. 14. Wherein light emitted from the non-central point of the radiation source array may be viewed as obliquely incident on the single magnifying replicator in the array of replicators to be diffracted into different orders. As shown in FIG. 14, the 0 th order diffraction of the upper edge of the radiation source array 11-order diffraction coincidence of the lower edge of the radiation source array 1; the 1 st order diffraction at the upper edge of the radiation source array 1 coincides with the 2 nd order diffraction at the lower edge of the radiation source array 1. By analogy, the k-order diffraction at the upper edge of the radiation source array 1 coincides with the k + 1-order diffraction at the lower edge of the radiation source array 1. To satisfy the above relationship, the angle θ of light incident on the amplified replica array and the period P of the superstructure unit in the amplified replica are SU The following formula (7) is satisfied:
where λ is the operating wavelength, P SU Is the period of the super-structural unit. Alternatively, the size of the diffractive magnifying replicator may be smaller than the size of the radiation source.
Example 2
In the above described diffractive beam-splitting magnifying replicator array, the size of an individual magnifying replicator may be smaller than the size of an individual radiation source.
Further, supplementary description is made on the super-structure unit in the projection system provided in any of the above embodiments.
Optionally, the nanostructures may be filled with air or other material that is transparent or translucent in the operating band. According to embodiments of the present application, the absolute value of the difference between the refractive index of the filled material and the refractive index of the nanostructure should be greater than or equal to 0.5. The nanostructures may be polarization sensitive structures that impart a geometric phase to incident light. For example, an elliptic cylinder, a hollow elliptic cylinder, an elliptic hole shape, a hollow elliptic hole shape, a rectangular cylinder, a rectangular hole shape, a hollow rectangular cylinder, a hollow rectangular hole, and the like. The nanostructures may be polarization insensitive structures that impose a propagation phase on the incident light. For example, a cylindrical shape, a hollow cylindrical shape, a circular hole shape, a hollow circular hole shape, a square cylindrical shape, a square hole shape, a hollow square cylindrical shape, a hollow square hole shape, and the like.
Optionally, the period of the superstructure unit is greater than or equal to 0.3 λ c And is less than or equal to 2 lambda c (ii) a Wherein λ is c Is the center wavelength of the operating band; λ when the operating band is multiband c Is the center wavelength of the shortest wavelength operating band. Optionally, the height of the nanostructures is greater than or equal to 0.3 λ c And is less than or equal to 5 lambda c (ii) a Wherein λ is c Is the center wavelength of the operating band; λ when the operating band is multiband c Is the center wavelength of the shortest wavelength operating band. Optionally, the periodicity of the superstructure units at different positions on the magnifying replicator is the same. Optionally, the period of the superstructure units at different positions on the magnifying replicator is at least partly the same.
According to an embodiment of the present application, the nanostructure is an all-dielectric building block. The nano-structure is made of a material with high transmittance in the working waveband of the projection system. Optionally, the material of the nanostructure has an extinction coefficient of less than 0.01 to radiation in the operating band. Illustratively, the material of the nanostructure includes one or more of fused silica, quartz glass, crown glass, flint glass, sapphire, crystalline silicon, amorphous silicon, hydrogenated amorphous silicon, and the like. Illustratively, the nanostructure material includes one or more of silicon nitride, titanium oxide, gallium nitride, gallium phosphide, hydrogenated amorphous silicon, and crystalline silicon.
In an alternative embodiment, the substrate is made of the same material as the nanostructure. In yet another alternative embodiment, the substrate is made of a different material than the nanostructure. The substrate is made of a material with high transmittance in the working band of the projection system provided by the embodiment of the application. Optionally, the substrate has an extinction coefficient of less than 0.01 for radiation in the operating band. Illustratively, the material of the substrate may be one or more of fused silica, quartz glass, crown glass, flint glass, sapphire, crystalline silicon, amorphous silicon, hydrogenated amorphous silicon, and the like. Illustratively, the material of the substrate includes one or more of silicon nitride, titanium oxide, gallium nitride, gallium phosphide, hydrogenated amorphous silicon, and crystalline silicon. Optionally, the thickness of the substrate is greater than or equal to 0.1 millimeters and less than or equal to 2 millimeters. For example, the substrate may have a thickness of 0.1mm, 0.5mm, 1mm, 1.5mm, 2mm, and so forth.
In a second aspect, an embodiment of the present application further provides a three-dimensional measurement module, where the three-dimensional measurement module includes the projection system provided in any of the above embodiments. It should be understood that the three-dimensional measurement module is based on the three-dimensional measurement principle of structured light.
It should be noted that the amplification duplicator provided by the embodiment of the application can be processed by a semiconductor process, and has the advantages of light weight, thin thickness, simple structure and process, low cost, high consistency of mass production and the like.
Since the above-described enlarged replicators are based on super-surface technology and are processed by semiconductor processes, such as wafer-level processing. For example, an array of enlarged replicators is fabricated on the same wafer and packaged with wafer-level bonding with similarly wafer-level fabricated VCSELs. And cutting the wafer level packaging device of the replica amplifier and the radiation source according to design requirements and use scenes to obtain the projection system with the size and the shape meeting the requirements.
In summary, the projection system and the three-dimensional measurement module including the projection system provided in the embodiment of the present application amplify and transmit a signal emitted by the radiation source to a target surface in an array form through the radiation source arranged randomly and the amplification duplicator including a plurality of super-structure units and through the phase and arrangement of the super-structure units. The magnifying replicator is a monolithic structure comprising nanostructures and an underlying substrate, and is structurally simple, lightweight, and cost-effective compared to a transfer projection device. The projection system and the three-dimensional measurement module comprising the same do not comprise DOE, stray interference caused by inevitable high-order diffraction in the DOE is avoided, the light energy utilization rate is improved, and the signal-to-noise ratio of far-field point cloud is increased. The amplification duplicator enables the projection efficiency to reach 100% through the super-structure units arranged in an array, enables the projection distance of the projection system to be far beyond that of the traditional DOE, and therefore reduces the energy consumption of the projection system.
In addition, the amplification duplicator in the projection system is compatible with a semiconductor process, and can be packaged with the radiation source array at a wafer level, so that the assembly precision and the system robustness of the projection system are improved, and the overall volume of the projection system is further reduced.
The above description is only a specific implementation of the embodiments of the present application, but the scope of the embodiments of the present application is not limited thereto, and any person skilled in the art can easily think of the changes or substitutions within the technical scope of the embodiments of the present application, and all the changes or substitutions should be covered within the scope of the embodiments of the present application. Therefore, the protection scope of the embodiments of the present application shall be subject to the protection scope of the claims.
Claims (20)
1. A projection system, comprising:
a radiation source array comprising randomly arranged radiation sources for providing a randomly distributed radiation signal; and (c) a second step of,
the amplification duplicator array is arranged on the light-emitting side of the radiation source array;
the amplified duplicator array comprises amplified duplicators arranged in an array; the amplification duplicator comprises a super-structure unit arranged in an array;
wherein the nanostructure element comprises at least one nanostructure and a substrate underlying the at least one nanostructure; and, the nanostructure array in the magnifying replicator is arranged on one side of the substrate;
based on the phase and arrangement of the metamaterial units, the amplification replicator is capable of modulating the radiation signals, amplifying the radiation signals and projecting the radiation signals in an array to a target surface.
2. The projection system of claim 1, wherein the nanostructures in the magnifying replicator are arranged in a pattern array of a close-packed pattern;
the nano-structures are disposed at the vertex positions and/or the central positions of the close-packed pattern.
3. The projection system of claim 2, wherein the magnified replicators of the magnified replicator array are arranged in an array of an a x B pattern;
wherein, the values of A and B are both more than or equal to 3.
4. The projection system of claim 3, wherein the magnified replicators of the magnified replicator array are arranged in an array of an AxB pattern;
wherein, the values of A and B are both more than or equal to 5.
5. The projection system of claim 3 wherein a and B of the magnified replicator array are equal in value.
6. The projection system of claim 3 wherein A and B of the magnified replicator array are unequal in value.
7. The projection system of claim 2, wherein the close-packed pattern comprises a regular hexagon, a square, or a sector.
8. The projection system of claim 1, wherein the radiation source comprises a vertical cavity surface emitting laser or an edge emitting laser.
9. The projection system of any of claims 1-6,
the amplifying duplicator is a diffraction beam splitter, light rays emitted by any radiation source are diffracted to a plurality of corresponding directions after passing through any amplifying duplicator, and lattice units are formed, so that the lattice units are arrayed after the light rays of the radiation source array pass through the amplifying duplicator array.
10. The projection system of claim 9 wherein the phase of any of the magnifying replicators is calculated from the lattice form of the corresponding target in an iterative fourier algorithm or a GS algorithm.
11. The projection system of claim 10, wherein the computing comprises a frequency domain equidistant computation or a spatial domain equidistant computation.
12. The projection system of claim 9, wherein the diffraction angles for different diffraction orders are the same in any of the magnifying replicators.
13. The projection system of claim 9, wherein the angle θ at which light is incident on the magnifying replicator array and the period P of the superstructure unit SU The following relationship is satisfied:
wherein λ is an operating wavelength.
14. The projection system of claim 1, wherein the radiation source array and the magnifying replicator array are combined by a wafer level package.
15. The projection system of any of claims 1-6, wherein the magnifying replicator is a transmissive superlens;
and the radiation source array and the magnifying replicator array are arranged coaxially.
16. The projection system of claim 15, wherein the magnifying replicator is capable of forming an afocal optical system for the radiation signal, or
The magnifying replicator has a positive focal length for the radiation signal, the exit face of the radiation source being located in an object focal plane of the magnifying replicator.
17. The projection system of claim 15, wherein the edge lengths of adjacent magnified replicators are at least sufficient to:
D n-2 +D n-1 ＝4h
wherein h is one half of the length of the radiation source; n is the number of the amplification duplicators, and n is more than or equal to 2; and D is the side length of the amplification duplicator.
18. The projection system of claim 15, wherein any three consecutive magnified replicators in any row or any column of the magnified replicator array comprises a first magnified replicator, a second magnified replicator, and a third magnified replicator and at least:
D 0 +D 1 ＝4h
D 1 +D 2 ＝4h
wherein h is one half of the length of the radiation source array; d 0 、D 1 、D 2 Side lengths of the first amplified replica, the second amplified replica, and the third amplified replica, respectively.
19. The projection system of claim 15, wherein the phase of the amplified replica satisfies at least any of the following equations:
in the formula, a i Is the phase coefficient, λ is the wavelength, r is the distance from the center of the nanostructure in the amplified replica to the center of the amplified replica, x, y are the coordinates of the surface of the amplified replica, f ML Is the focal length of the magnifying replicator.
20. A three-dimensional measurement module, comprising the projection system of any of claims 1-19.
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| CN202210784646.8A CN114995038A (en) | 2022-07-05 | 2022-07-05 | Projection system and three-dimensional measurement module comprising same |
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