CN114473852A - Polishing head and chemical mechanical planarization equipment - Google Patents

Polishing head and chemical mechanical planarization equipment Download PDF

Info

Publication number
CN114473852A
CN114473852A CN202011173863.0A CN202011173863A CN114473852A CN 114473852 A CN114473852 A CN 114473852A CN 202011173863 A CN202011173863 A CN 202011173863A CN 114473852 A CN114473852 A CN 114473852A
Authority
CN
China
Prior art keywords
polishing
polishing head
retaining ring
groove
cup
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202011173863.0A
Other languages
Chinese (zh)
Inventor
具滋贤
杨涛
张月
刘青
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Institute of Microelectronics of CAS
Zhenxin Beijing Semiconductor Co Ltd
Original Assignee
Institute of Microelectronics of CAS
Zhenxin Beijing Semiconductor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Institute of Microelectronics of CAS, Zhenxin Beijing Semiconductor Co Ltd filed Critical Institute of Microelectronics of CAS
Priority to CN202011173863.0A priority Critical patent/CN114473852A/en
Publication of CN114473852A publication Critical patent/CN114473852A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

The invention discloses a polishing head and chemical mechanical planarization equipment, relates to the technical field of semiconductor manufacturing, and is used for guiding polishing liquid to flow to the polishing head, so that the use rate of the polishing liquid is improved, and the use cost of the polishing liquid is saved. The polishing head includes: a retaining ring; a guide cup disposed at a periphery of the retainer ring; the guide cup comprises a cup wall and at least one through groove formed in the cup wall, and the through groove is used for allowing the polishing liquid to flow through. The chemical mechanical planarization equipment comprises the polishing head provided by the technical scheme. The polishing head and the chemical mechanical planarization device provided by the invention are used for processing a semiconductor.

Description

Polishing head and chemical mechanical planarization equipment
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a polishing head and chemical mechanical planarization equipment.
Background
As semiconductor devices have become more complex in structure and smaller in process size, the number of chemical mechanical planarization process steps has increased, and thus, the amount of raw materials and consumables used has continued to increase.
In chemical mechanical planarization, a polishing liquid needs to be distributed between the polishing pad and the polishing head. In the prior art, after the polishing solution is added to the polishing pad, the polishing solution is thrown off the polishing pad due to the centrifugal force generated by the rotation of the polishing pad. Therefore, the polishing solution cannot be fully utilized, and the use cost of the polishing solution is high.
Disclosure of Invention
The invention aims to provide a polishing head and chemical mechanical planarization equipment, which are used for guiding polishing liquid to flow to the polishing head, improving the utilization rate of the polishing liquid and saving the use cost of the polishing liquid.
In a first aspect, the present invention provides a polishing head. The polishing head includes a retaining ring and a guide cup. The guide cup is disposed at the periphery of the retainer ring. The guide cup comprises a cup wall and at least one through groove formed in the cup wall, and the through groove is used for allowing the polishing liquid to flow through.
Compared with the prior art, the guide cup is arranged on the periphery of the retaining ring, and the polishing liquid can be directly added between the cup wall included in the guide cup and the retaining ring. On the basis, at least one through groove is formed in the cup wall, polishing liquid can flow to the through groove along the cup wall and flow to the polishing pad on the periphery of the polishing head through the through groove, and when the polishing pad rotates along with the turntable, the polishing liquid guided to the polishing pad on the periphery of the polishing head by the guide cup flows to the polishing pad below the polishing head under the action of centrifugal force so as to participate in polishing operation. According to the application process, the polishing solution can be firstly guided to the periphery of the polishing head under the action of the guide cup, and then the polishing solution flows to the area, below the polishing head, of the polishing pad to participate in polishing under the action of the centrifugal force of the polishing pad, so that the waste caused by throwing the polishing solution out of the polishing pad under the action of the centrifugal force of the polishing pad can be reduced, the utilization rate of the polishing solution is improved, and the polishing cost is reduced.
In a second aspect, the present invention also provides a chemical mechanical planarization apparatus. The chemical mechanical planarization apparatus is used for polishing a wafer. The chemical mechanical planarization equipment comprises a turntable, a polishing head, a polishing liquid conveying device and a polishing pad. The polishing pad is arranged on the bearing surface of the turntable. The polishing head is used for bearing the wafer. The polishing solution conveying device is used for conveying polishing solution to the polishing pad. The polishing head is a polishing head according to the first aspect of the present invention.
Advantageous effects of the chemical mechanical planarization apparatus provided by the second aspect, as compared with the related art, can refer to the advantageous effects of the polishing head described with reference to the implementation manner of the first aspect.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention and not to limit the invention. In the drawings:
fig. 1 is a schematic structural diagram of a chemical mechanical planarization apparatus provided in the prior art.
FIG. 2 is a schematic diagram illustrating a configuration of a polishing head according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a chemical mechanical planarization apparatus according to an embodiment of the present invention;
FIG. 4 is a bottom view of a retaining ring and guide cup provided in accordance with an embodiment of the present invention;
FIG. 5 is a schematic structural view of a retaining ring and a guide cup according to an embodiment of the present invention;
fig. 6 is a schematic structural diagram of a guide cup according to an embodiment of the present invention.
Reference numerals:
10-wafer, 11-polishing pad, 12-polishing liquid delivery device,
20-polishing head, 21-retaining ring, 211-guiding groove,
22-guide cup, 221-through slot, 222-inclined portion.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or be indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or be indirectly connected to the other element.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise. The meaning of "a number" is one or more unless specifically limited otherwise.
In the description of the present invention, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or may be connected through the use of two elements or the interaction of two elements. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
Fig. 1 illustrates a schematic structural diagram of a chemical mechanical planarization apparatus provided in the prior art. In a semiconductor device manufacturing process, for example, as shown in fig. 1, when a chemical mechanical planarization process is used to planarize a surface of a wafer 10, a layer of polishing slurry is continuously distributed between the wafer 10 and a polishing pad 11. The polishing liquid is uniformly distributed on the surface of the polishing pad 11 by the centrifugal force of the polishing pad 11. A thin film of liquid is formed between the wafer 10 and the polishing pad 11, and chemical components in the slurry react with the wafer 10 to convert insoluble materials into readily soluble materials. The easily soluble substances are removed from the surface of the wafer 10 by micro-mechanical friction of particles, and flow out of the polishing pad 11 along with the polishing liquid, so as to achieve the purpose of planarizing the surface of the wafer 10. The above-mentioned easily soluble substances are usually mixed in the used polishing solution, and the used polishing solution cannot be directly reused for polishing, so that a large amount of polishing solution is consumed in the chemical mechanical planarization process.
In the prior art, the polishing liquid is added to the polishing pad 11 by a polishing liquid delivery device 12 such as a nozzle. Since the polishing pad 11 rotates along with the turntable, a part of the polishing liquid participates in the polishing of the wafer 10 under the centrifugal force of the polishing pad 11, and most of the polishing liquid is directly thrown out of the polishing pad 11. Therefore, most of the polishing solution cannot effectively participate in the polishing of the wafer 10, so that the utilization rate of the polishing solution is reduced and the use cost is increased. As the structure layers (the structure layers may be a shallow trench isolation layer, an interlayer dielectric layer, a metal plug material layer, a metal wiring layer, etc.) arranged on the wafer 10 become more complex, the chemical mechanical planarization process required in the semiconductor device manufacturing process increases, and therefore, the use cost of the polishing solution is higher and higher.
In view of the above technical problems, embodiments of the present invention provide a polishing head 20 and a chemical mechanical planarization apparatus. Fig. 2 shows a schematic structural diagram of a polishing head according to an embodiment of the present invention, and fig. 3 shows a schematic structural diagram of a chemical mechanical planarization apparatus according to an embodiment of the present invention. As shown in fig. 2 and 3, the polishing head 20 includes a retainer ring 21 and a guide cup 22, and the guide cup 22 is disposed on the outer periphery of the retainer ring 21. The guide cup 22 includes a cup wall, and at least one through groove 221 opened on the cup wall, the through groove 221 is used for circulating the polishing liquid.
The retaining ring 21 may be any retaining ring 21 provided in the prior art, and is not particularly limited herein. The retainer ring 21 may be adhesively secured to a surface of the polishing head 20 adjacent to the polishing pad 11. In actual use, the wafer 10 is sucked into the ring-shaped space of the retainer ring 21, and the retainer ring 21 is used to fix the wafer 10.
The retaining ring 21 may have a guide groove 211 formed in a bottom surface (a surface close to the polishing pad 11) thereof, and the guide groove 211 may extend from an outer sidewall of the retaining ring 21 to an inner sidewall of the retaining ring 21. In actual use, the polishing liquid under the centrifugal force of the polishing pad 11 can flow from the flow guide groove 211 to the side surface of the wafer 10, so as to improve the utilization rate of the polishing liquid.
The structure of the flow guide groove 211 is various, and is not limited herein. Fig. 4 shows a bottom view of the retaining ring 21 and the guide cup 22 provided in the embodiment of the present invention. For example, as shown in fig. 4, the retaining ring 21 may be provided with guide grooves 211 on the bottom surface thereof, and the guide grooves 211 extend from the outer side wall to the inner side wall of the retaining ring 21. The guide groove 211 communicates with the through groove 221. After flowing out of the through groove 221, the polishing liquid flows into the guiding groove 211 of the retaining ring 21, and the guiding groove 211 guides the polishing liquid from outside to inside, and finally flows to the surface of the wafer 10. In order to obtain a better communication effect, the polishing liquid outlet of the through groove 221 of the retaining ring 21 is disposed corresponding to the polishing liquid inlet of the guide groove 211 of the retaining ring 21. Whereby the polishing liquid can be more quickly introduced into the inside of the retainer ring 21. The above-described corresponding arrangement may not be strictly end-to-end, and the through groove 221 may be arranged obliquely to the retainer ring 21, and the polishing liquid may have a tendency to flow toward the guide groove 211 after exiting from the through groove 221. By the above-described corresponding arrangement, the flow rate of the slurry flowing to the flow guide groove 211 can be increased. In order to allow the slurry to sufficiently flow into the guide grooves 211, the slurry outlet of the through groove 221 may have a size larger than that of the slurry inlet of the guide grooves 211.
The guide cup 22 itself may have a complete cup-shaped cavity. The guide cup 22 may also be a hollow structure and form a cavity with the outer wall of the retaining ring 21. The cup-shaped chamber or cavities may be used to contain a polishing fluid, which is added to the chamber by the polishing fluid delivery device 12. At least one through groove 221 is formed in the wall of the guide cup 22 in the chamber, and the through groove 221 allows the polishing solution contained in the chamber to flow onto the polishing pad 11 and further to the periphery of the wafer 10. On the basis, at least one through groove 221 is arranged on the cup wall, the polishing liquid can flow to the through groove 221 along the cup wall and flow to the polishing pad 11 on the periphery of the polishing head 20 through the diversion groove 211, and when the polishing pad 11 rotates along with the turntable, the polishing liquid guided to the polishing pad 11 on the periphery of the polishing head 20 by the guide cup 22 flows to the polishing pad 11 below the polishing head 20 under the action of centrifugal force to participate in polishing operation. As can be seen from the above application process, the polishing liquid can be guided to the periphery of the polishing head 20 by the guiding cup 22, and then flows to the region of the polishing pad 11 under the polishing head 20 to participate in polishing by the centrifugal force of the polishing pad 11. By adopting the polishing head 20 provided by the embodiment of the invention, on one hand, the part of the polishing liquid thrown away by centrifugal force can be reduced, and on the other hand, the part of the polishing liquid flowing to the wafer 10 can be increased. In combination with the above effects, the polishing head 20 can improve the use efficiency of the polishing solution and reduce the use cost of the polishing solution by the guide cup 22. Through the practical use effect, 70% of polishing liquid which is thrown away to the outside of the polishing disk originally can be saved. By adopting the polishing head 20 provided by the embodiment of the invention, not only can the use cost of the polishing solution be saved, but also the market competitiveness of equipment equipped with the polishing head 20 can be improved.
Fig. 5 shows a schematic structural diagram of a retaining ring and a guide cup provided by an embodiment of the invention. As shown in fig. 5, the through groove 221 of the guide cup 22 may be inclined in a direction approaching the retainer ring 21. In order to allow the slurry to converge and flow to the outer periphery of the wafer 10, the through groove 221 should be inclined toward the retainer ring 21 or perpendicular to the polishing pad 11 as shown in fig. 2. After the polishing liquid is guided by the through groove 221, most of the polishing liquid has a tendency of flowing towards the direction of the wafer 10, so that the use efficiency of the polishing liquid can be further improved, and the use cost of the polishing liquid can be reduced. The above-mentioned through groove 221 is inclined toward the retaining ring 21, which means that: the upper slurry inlet of the through groove 221 is spaced from the center of the retainer ring 21 by a distance greater than or equal to the distance, and the lower slurry outlet is spaced from the center of the retainer ring 21. The specific structure of the through groove 221 between the polishing solution inlet and the polishing solution outlet is not limited, and may be a regular shape or a special shape, so as to ensure that the positional relationship between the polishing solution inlet and the polishing solution outlet of the through groove 221 satisfies the above requirements. For example, the portion between the polishing liquid inlet and the polishing liquid outlet may be similar to a flexible pipe, and how the pipe is coiled or the internal structure does not affect the direction of the polishing liquid flowing out of the polishing liquid outlet.
Fig. 6 is a schematic structural diagram of a guide cup provided in an embodiment of the present invention. In order to allow the slurry to flow to the through groove 221 better, the slurry flows to the outer circumference of the wafer 10 through the guide groove 211. As shown in fig. 2 and 6, the cup wall may have an inclined portion 222 inclined toward the retainer ring 21, and the through groove 221 is opened in the inclined portion 222. The inclined portion 222 may guide the flow of the slurry falling thereon toward the through groove 221, and on the other hand, may contain a certain amount of the slurry. The guide cup 22 as a whole acts like a funnel, while the inclined portion 222 can be seen as the inner wall of the funnel near the spout inside the funnel. Just as the funnel can have a variety of shapes, the shape of the cup wall is not limited, with the primary purpose of achieving the guiding and containment effect. The polishing liquid can be contained in the cavity formed between the cup wall of the guide cup 22 and the polishing head 20 and the retainer ring 21. The inclined portion 222 may guide the slurry to the through groove 221, and ensure the slurry to flow toward the wafer 10. In actual use, dynamic balance is formed by adjusting the adding speed of the polishing solution and the descending speed of the polishing solution in the cavity. Accordingly, it is ensured that the polishing solution is not added excessively to cause waste.
As shown in fig. 6, the inclined portion 222 and the retaining ring 21 form an included angle α of 10 ° or more and α <90 °. The inclined portion 222 and the retainer ring 21 are necessarily formed at an angle therebetween, wherein the flow rate of the polishing liquid between the retainer ring 21 and the guide cup 22 can be adjusted by changing the size of the angle α. And also has an effect on the rate of slurry flow in the channel 221. Therefore, by limiting the size of the included angle α, polishing solutions with different flow rates can be obtained, and the adjustment can be performed according to the processing requirements of the actual wafer 10, and the adjustment effect can be achieved by replacing different guide cups 22. Wherein, the flow velocity along the inclined portion 222 generated by the gravity of the polishing liquid is different according to the angle α. Furthermore, the difference of the included angle α affects the volume of the cavity, and further affects the flow rate of the polishing liquid in the through groove 221 and the flow rate of the polishing liquid.
As shown in fig. 2 to 4, in the polishing head 20 according to the embodiment of the present invention, the at least one through groove 221 includes a plurality of through grooves 221, and the plurality of through grooves 221 are uniformly formed in the wall of the cup. Since the polishing head 20 rotates, the through grooves 221 need to be uniformly arranged to ensure that the same amount of polishing liquid flows around the wafer 10. Therefore, the polishing solution is uniformly distributed on the wafer 10, and the chemical mechanical planarization effect is ensured. Meanwhile, the number of the through grooves 221 and the area of the polishing solution inlet and outlet of the through grooves 221 are different from each other in accordance with the amount of the polishing solution flowing toward the wafer 10 per unit time.
For example, referring to fig. 4, when the cross section of the through groove 221 is a fan-shaped ring, the higher the area ratio of the plurality of through grooves 221 on the same ring, the greater the flow rate of the polishing liquid. The larger the number of the through grooves 221 is, the more uniform the slurry flows toward the wafer 10. Therefore, the number and arrangement of the through grooves 221 affect the supply of the polishing solution. On the premise of ensuring that the number of the through grooves 221 is large, it is necessary to ensure that the area occupation ratio of the through grooves 221 is large, and the cross-sectional area of each through groove 221 cannot be too small.
For example, referring to fig. 4, when the number of the guide grooves 211 of the retaining ring 21 is 6, the through grooves 221 of the guide cup 22 are correspondingly arranged in 6 circumferential rows. Meanwhile, the cross section of the through groove 221 may be a sector ring shape as shown in the figure, and the arc length of the sector ring-shaped polishing solution outlet on the guide cup 22 is greater than the width or arc length of the polishing solution inlet of the guide groove 211. Accordingly, it is ensured that sufficient slurry flows out of the guiding groove 211 from the through groove 221, and thus sufficient slurry supply to the wafer 10 is ensured.
In most prior art polishing heads 20, the retaining ring 21 is a conventional annular ring type structure. The polishing head 20 provided by the embodiment of the present invention can be used in a wider range of applications. The guide cup 22 is fixedly or detachably disposed on the outer periphery of the retaining ring 21. When the guide cup 22 is fixedly connected to the periphery of the retaining ring 21, the guide cup may be integrated or glued. When the detachable connection is adopted, a threaded connection or a clamping groove embedding mode can be adopted.
For example, a groove may be formed on the existing retaining ring 21, and the guide cup 22 may be provided with a protrusion to fit into the groove, so as to fix the guide cup 22 to the retaining ring 21. At this time, the guide cups 22 are easy to detach and mount, and grooves may be formed in the retaining rings 21 having the same outer diameter, so that different guide cups 22 may be selected according to the opening condition of the guide grooves 211 in the retaining rings 21. A screw hole may be formed in the conventional retaining ring 21, and a screw hole may be formed in the guide cup 22 to be fixed by a bolt or the like. The above-described detachable effect can also be achieved.
For another example, the guide grooves 211 and the through grooves 221 may be provided correspondingly, in which case the guide cup 22 may be fixedly provided on the outer periphery of the retaining ring 21, and the retaining ring 21 and the guide cup 22 may be integrally formed. The guide cup 22 and the retaining ring 21 are then machined as a whole so that the guide grooves 211 and the through grooves 221 can be in exact one-to-one correspondence. The through grooves 221 and the guide grooves 211 may be connected end to end so that the polishing liquid may flow toward the wafer 10.
As shown in fig. 5 and 6, the guide cup 22 may have a hollow inverted truncated cone shape that penetrates vertically. The guide cup 22 of the central control inverted frustum is easy to process and can be finished through common cold processing, and meanwhile, the included angle alpha between the inclined part and the retaining ring 21 can be conveniently adjusted according to actual conditions. The cross section of the guide cup 22 may be any one of a circular shape, a square shape, or a special shape, but the more complicated the shape needs to be, the more difficult the processing is, the higher the processing cost needs to be, and the difficulty in adjusting the included angle α is also large.
As shown in fig. 3, an embodiment of the present invention provides a chemical mechanical planarization apparatus for polishing a wafer 10; the chemical mechanical planarization equipment comprises a turntable, a polishing head 20, a polishing liquid conveying device 12 and a polishing pad 11; the polishing pad 11 is arranged on a bearing surface of the rotary table; the polishing head 20 is used for carrying the wafer 10; the polishing liquid delivery device 12 is used for delivering the polishing liquid to the polishing pad 11. By combining the polishing head 20 provided by the embodiment of the invention, the chemical mechanical planarization equipment can save a large amount of polishing solution, so that the use cost of the polishing solution is reduced. So that the market competitiveness of the chemical mechanical planarization apparatus can be improved.
In the foregoing description of embodiments, the particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments or examples.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.

Claims (10)

1. A polishing head, comprising:
a retaining ring;
a guide cup disposed at an outer periphery of the retaining ring; the guide cup comprises a cup wall and at least one through groove formed in the cup wall, and the through groove is used for allowing the polishing liquid to flow through.
2. The polishing head as set forth in claim 1 wherein the through groove is inclined in a direction approaching the retainer ring.
3. The polishing head as set forth in claim 1 wherein the cup wall has a bevel inclined toward the retaining ring, the through groove opening at the bevel.
4. The polishing head according to claim 3, wherein the bevel portion and the retaining ring have an angle α therebetween, wherein α is 10 ° or more and less than 90 °.
5. Polishing head according to any one of claims 1 to 4, wherein at least one of the through slots comprises a plurality of through slots, the plurality of through slots opening evenly in the cup wall.
6. The polishing head as set forth in any one of claims 1 to 4 wherein the retaining ring has a bottom surface formed with channels extending from an outer sidewall to an inner sidewall of the retaining ring; the diversion trench is communicated with the through trench.
7. The polishing head according to any one of claims 1 to 4, wherein the guide cup has a hollow inverted frustum shape which is continuous from top to bottom.
8. The polishing head according to any one of claims 1 to 4, wherein the guide cup is fixedly or detachably disposed on the periphery of the retaining ring.
9. The polishing head as set forth in claim 8 wherein the retaining ring is of unitary construction with the guide cup fixedly disposed about the periphery of the retaining ring.
10. A chemical mechanical planarization apparatus, wherein the chemical mechanical planarization apparatus is used for polishing a wafer; the chemical mechanical planarization equipment comprises a turntable, a polishing head, a polishing solution conveying device and a polishing pad; the polishing pad is arranged on a bearing surface of the rotary disc; the polishing head is used for bearing the wafer; the polishing solution conveying device is used for conveying polishing solution to the polishing pad;
the polishing head is a polishing head according to any one of claims 1 to 9.
CN202011173863.0A 2020-10-28 2020-10-28 Polishing head and chemical mechanical planarization equipment Pending CN114473852A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202011173863.0A CN114473852A (en) 2020-10-28 2020-10-28 Polishing head and chemical mechanical planarization equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202011173863.0A CN114473852A (en) 2020-10-28 2020-10-28 Polishing head and chemical mechanical planarization equipment

Publications (1)

Publication Number Publication Date
CN114473852A true CN114473852A (en) 2022-05-13

Family

ID=81491057

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202011173863.0A Pending CN114473852A (en) 2020-10-28 2020-10-28 Polishing head and chemical mechanical planarization equipment

Country Status (1)

Country Link
CN (1) CN114473852A (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6527624B1 (en) * 1999-03-26 2003-03-04 Applied Materials, Inc. Carrier head for providing a polishing slurry
CN101817160A (en) * 2010-04-13 2010-09-01 王敬 Silicon ingot polishing method, system and polishing plate
JP2012166322A (en) * 2011-02-16 2012-09-06 Toshiba Corp Polishing pad, and method and device for polishing
CN103586754A (en) * 2013-11-26 2014-02-19 厦门大学 Optical element polishing device
CN110497306A (en) * 2019-08-20 2019-11-26 沈小牛 Chemical polisher is used in a kind of processing of semiconductor material
CN111618736A (en) * 2020-04-20 2020-09-04 北京烁科精微电子装备有限公司 Chemical mechanical planarization equipment

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6527624B1 (en) * 1999-03-26 2003-03-04 Applied Materials, Inc. Carrier head for providing a polishing slurry
CN101817160A (en) * 2010-04-13 2010-09-01 王敬 Silicon ingot polishing method, system and polishing plate
JP2012166322A (en) * 2011-02-16 2012-09-06 Toshiba Corp Polishing pad, and method and device for polishing
CN103586754A (en) * 2013-11-26 2014-02-19 厦门大学 Optical element polishing device
CN110497306A (en) * 2019-08-20 2019-11-26 沈小牛 Chemical polisher is used in a kind of processing of semiconductor material
CN111618736A (en) * 2020-04-20 2020-09-04 北京烁科精微电子装备有限公司 Chemical mechanical planarization equipment

Similar Documents

Publication Publication Date Title
US9731400B2 (en) Grinding wheel and cleaning method for grinding chamber
CN106607775B (en) Abrasive Disc with Internal Fluid Supply Structure
CN102131618A (en) Polishing pad with porous elements and method of making and using same
US20150187628A1 (en) Vacuum Device by Using Centrifugal Resources
CN211565581U (en) External-rotation internal-cooling electroplated peripheral grinding wheel
CN103657801A (en) Stirring type grinding separator and grinding device
CN111958479B (en) Polishing device and chemical mechanical planarization equipment
WO2011086715A1 (en) Super-abrasive grain wheel, wafer manufacturing method using same, and wafer
CN107097151B (en) Polishing solution pipeline system and upper disc and lower disc grinding mechanism
CN217341886U (en) Atomizing disk and centrifugal atomizing device
CN114473852A (en) Polishing head and chemical mechanical planarization equipment
JP2013510007A (en) Apparatus and method for processing a flat workpiece on both sides
JP2018103297A (en) Polishing jig and polishing device
CN207326710U (en) Grinding head and chemical mechanical polishing device
JPH11262862A (en) Double side polishing device and slurry supply method
CN112108992B (en) Ceramic small part batch grinding device
JPH11207636A (en) Cup-like grinding wheel
KR100338404B1 (en) cup-wheel-shaped grindstone and plane grinding machine having the same
KR101164498B1 (en) Grinding wheel
JP4837853B2 (en) Grinding wheel
JP6865567B2 (en) Grinding wheel
CN220372845U (en) Wafer polishing device
JP5892389B2 (en) Polishing pad and polishing method
CN216707114U (en) Grinding pad
CN220740769U (en) Silicon wafer thinning grinding wheel

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20220513