CN114077110A - Array substrate, liquid crystal display panel and display device - Google Patents
Array substrate, liquid crystal display panel and display device Download PDFInfo
- Publication number
- CN114077110A CN114077110A CN202111390952.5A CN202111390952A CN114077110A CN 114077110 A CN114077110 A CN 114077110A CN 202111390952 A CN202111390952 A CN 202111390952A CN 114077110 A CN114077110 A CN 114077110A
- Authority
- CN
- China
- Prior art keywords
- light
- emitting
- liquid crystal
- electrically connected
- sub
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 108
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 70
- 239000010408 film Substances 0.000 claims description 16
- 239000012788 optical film Substances 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 14
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 238000004806 packaging method and process Methods 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 67
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 5
- 238000005538 encapsulation Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000002041 carbon nanotube Substances 0.000 description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910021389 graphene Inorganic materials 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 230000007306 turnover Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133603—Direct backlight with LEDs
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The invention discloses an array substrate, a liquid crystal display panel and a display device, wherein a substrate formed with sub-pixels is provided with micro light-emitting diodes, when the array substrate is applied to the liquid crystal display panel, the micro light-emitting diodes can be used as a backlight source of the liquid crystal display panel to provide a light source for the liquid crystal display panel, and the sub-pixels on the array substrate are used for displaying pictures so as to realize the picture display function of the liquid crystal display panel. The micro light-emitting diode serving as the backlight source is integrated on the substrate base plate with the switch transistor, and light emitted by the micro light-emitting diode can directly enter the liquid crystal layer without passing through the substrate base plate, so that the utilization rate of a light source is greatly improved. And, when designing devices such as switching transistors on the substrate, the problem of aperture ratio does not need to be considered, so that the size of the devices such as switching transistors can be made larger, and the driving capability of the devices such as switching transistors can be improved.
Description
Technical Field
The invention relates to the technical field of display, in particular to an array substrate, a liquid crystal display panel and a display device.
Background
In a Display such as a Liquid Crystal Display (LCD), a plurality of pixels are generally included. Each pixel may include: red, green, and blue sub-pixels. The display brightness of each sub-pixel is controlled by controlling the display data corresponding to each sub-pixel, so that the colors required to be displayed are mixed to display a color image.
Disclosure of Invention
The embodiment of the invention provides an array substrate, a liquid crystal display panel and a display device, which are used for reducing the thickness of the liquid crystal display panel.
An embodiment of the present invention provides an array substrate, including:
a substrate base plate;
a plurality of sub-pixels located at one side of the substrate base plate; wherein the sub-pixel includes a pixel electrode and a switching transistor electrically connected to the pixel electrode;
a plurality of light emitting cells located at one side of the substrate base plate where the sub-pixels are disposed; the light-emitting unit comprises a micro light-emitting diode and a light-emitting driving circuit electrically connected with the micro light-emitting diode;
wherein one of the light emitting units is disposed corresponding to at least two of the sub-pixels; the light emission driving circuit is electrically connected to the switching transistor in the corresponding sub-pixel.
In some examples, the array substrate is divided into a plurality of sub-pixel groups; each sub-pixel group comprises M rows and N columns of sub-pixels; wherein M is an integer greater than 1, and N is an integer greater than 1;
the light-emitting units and the sub-pixel groups are arranged in a one-to-one correspondence manner;
and the light-emitting drive circuit in the light-emitting unit is electrically connected with the switch transistor in the corresponding sub-pixel.
In some examples, the array substrate further includes:
a plurality of gate lines; the grid electrodes of the switching transistors in one row of sub-pixels are electrically connected with one grid line;
a plurality of data lines; the source electrodes of the switching transistors in one column of sub-pixels are electrically connected with one data line;
a first light emitting power line; the input end of each light-emitting driving circuit is electrically connected with the first light-emitting power line;
a second light emitting power line; the cathode of each micro light-emitting diode is electrically connected with the second light-emitting power line;
wherein the drain of the switching transistor in the same sub-pixel is electrically connected to the pixel electrode; the control end of the light-emitting drive circuit is electrically connected with the drains of the switching transistors in all the corresponding sub-pixels; and the output end of the light-emitting drive circuit is electrically connected with the anode of the micro light-emitting diode.
In some examples, the light emission driving circuit includes a plurality of light emission control transistors; the plurality of light-emitting control transistors are arranged in one-to-one correspondence with the corresponding sub-pixels;
the grid electrode of the light-emitting control transistor is electrically connected with the drain electrode of the switch transistor in the corresponding sub-pixel, the source electrode of the light-emitting control transistor is electrically connected with the first light-emitting power supply line, and the drain electrode of the light-emitting control transistor is electrically connected with the anode of the micro light-emitting diode.
In some examples, the film layers with the same function in the light emitting control transistor and the switching transistor are made of the same material in the same layer.
In some examples, the pixel electrode is located on a side of the source of the switching transistor facing away from the substrate; the pixel electrode is also electrically connected with the grid electrode of the light-emitting control transistor through a first via hole; wherein the first via hole penetrates through an insulating layer between the pixel electrode and a gate of the switching transistor;
the micro light-emitting diode is positioned on one side of the pixel electrode, which is far away from the substrate;
the light emitting unit further includes: a first bonding pad and a second bonding pad arranged on the same layer as the pixel electrode; the first bonding pad is electrically connected with the anode of the micro light-emitting diode, and the second bonding pad is electrically connected with the cathode of the micro light-emitting diode.
In some examples, the light emitting unit further includes: the first bonding connecting parts are arranged in one-to-one correspondence with the first bonding pads, and the second bonding connecting parts are arranged in one-to-one correspondence with the second bonding pads;
the first bonding connecting parts are positioned between the corresponding first bonding pads and the anodes of the micro light-emitting diodes;
the second bonding connecting part is positioned between the corresponding second bonding pad and the cathode of the micro light-emitting diode.
An embodiment of the present invention further provides a liquid crystal display panel, including:
the array substrate is the array substrate;
the opposite substrate is arranged opposite to the array substrate;
and the liquid crystal layer is packaged between the array substrate and the opposite substrate.
In some examples, the array substrate further includes: the packaging layer is positioned on one side, away from the substrate base plate, of the micro light-emitting diode, the first optical film layer is positioned on one side, away from the substrate base plate, of the packaging layer, and the first polarizer is positioned on one side, away from the substrate base plate, of the first optical film layer;
the liquid crystal display panel further includes: the liquid crystal display panel comprises a liquid crystal layer, a counter substrate, a color film layer, a second optical film layer and a second polarizer, wherein the color film layer is positioned between the liquid crystal layer and the counter substrate, the second optical film layer is positioned between the color film layer and the counter substrate, and the second polarizer is positioned on one side, away from the substrate, of the counter substrate.
In some examples, the micro light emitting diodes are white mini LEDs;
or, the micro light emitting diode is a blue mini LED, and the liquid crystal display panel further includes: and the color conversion layer is positioned between the first optical film layer and the first polarizer.
The embodiment of the invention also provides a display device which comprises the liquid crystal display panel.
The invention has the following beneficial effects:
according to the array substrate, the liquid crystal display panel and the display device provided by the embodiment of the invention, the micro light-emitting diodes are arranged on the substrate on which the sub-pixels are formed, when the array substrate is applied to the liquid crystal display panel, the micro light-emitting diodes can be used as a backlight source of the liquid crystal display panel to provide a light source for the liquid crystal display panel, and the sub-pixels on the array substrate are used for displaying pictures, so that the picture display function of the liquid crystal display panel is realized. Therefore, the backlight module is not additionally arranged for the liquid crystal display panel, and the whole liquid crystal display panel is more ultrathin. And the micro light-emitting diode serving as the backlight source is integrated on the substrate base plate with the switching transistor, and light emitted by the micro light-emitting diode can directly enter the liquid crystal layer without passing through the substrate base plate, so that the utilization rate of a light source is greatly improved. And, when designing devices such as switching transistors on the substrate, the problem of aperture ratio does not need to be considered, so that the size of the devices such as switching transistors can be made larger, and the driving capability of the devices such as switching transistors can be improved.
Drawings
FIG. 1 is a schematic top view of an array substrate according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of an equivalent circuit structure according to an embodiment of the present invention;
FIG. 3 is a schematic view of a layout structure of an array substrate according to an embodiment of the invention;
FIG. 4 is a schematic cross-sectional view of the array substrate shown in FIG. 3 along the AA';
fig. 5 is a schematic structural diagram of a liquid crystal display panel in an embodiment of the invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the drawings of the embodiments of the present invention. It is to be understood that the embodiments described are only a few embodiments of the present invention, and not all embodiments. And the embodiments and features of the embodiments may be combined with each other without conflict. All other embodiments, which can be derived by a person skilled in the art from the described embodiments of the invention without any inventive step, are within the scope of protection of the invention.
Unless defined otherwise, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this invention belongs. The use of "first," "second," and similar terms in the present application do not denote any order, quantity, or importance, but rather the terms are used to distinguish one element from another. The word "comprising" or "comprises", and the like, means that the element or item listed before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect.
It should be noted that the sizes and shapes of the figures in the drawings are not to be considered true scale, but are merely intended to schematically illustrate the present invention. And the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout.
Referring to fig. 1 to 5, the liquid crystal display panel may include: the liquid crystal display panel comprises an array substrate 01 and an opposite substrate 200 which are oppositely arranged, and a liquid crystal layer 300 positioned between the array substrate 01 and the opposite substrate 200. Illustratively, the array substrate 01 may include: the display panel comprises a substrate 100, a plurality of pixel units arranged in an array and positioned on one side of the substrate 100, a plurality of grid lines GA and a plurality of data lines DA. Illustratively, each pixel cell includes a plurality of different color sub-pixels spx. And the sub-pixel spx is located between the substrate 100 and the liquid crystal layer 300. For example, the pixel unit may include a red sub-pixel spx, a green sub-pixel spx, and a blue sub-pixel spx, so that color mixing may be performed by red, green, and blue to realize color display. Alternatively, the pixel unit may include a red sub-pixel spx, a green sub-pixel spx, a blue sub-pixel spx, and a white sub-pixel spx, so that color display may be realized by color mixing of red, green, blue, and white. Of course, in practical applications, the light emitting color of the sub-pixel spx in the pixel unit can be determined according to practical application environments, and is not limited herein. The following description will be given taking an example in which the pixel unit includes a red sub-pixel spx, a green sub-pixel spx, and a blue sub-pixel spx.
In the embodiment of the present disclosure, each sub-pixel spx may include a pixel electrode 150 and a switching transistor electrically connected to the pixel electrode 150. Each sub-pixel spx row may correspond to a gate line GA, and each sub-pixel spx column may correspond to a data line DA. Further, the gates of the switching transistors in one row of the subpixels spx are electrically connected to the corresponding gate lines GA, the sources of the switching transistors in one column of the subpixels spx are electrically connected to the corresponding data lines DA, and the drains of the switching transistors in the same subpixel spx are electrically connected to the pixel electrodes 150. When the gate line GA inputs a gate start signal, the electrically connected switching transistor can be controlled to be turned on, and at this time, a data voltage is input to the data line DA, so that the data voltage on the data line DA is input to the subpixel spx through the turned-on switching transistor, and the subpixel spx is charged, thereby realizing a display function.
In the embodiment of the present disclosure, as shown in fig. 1 to 5, the array substrate further includes: the plurality of light emitting units fpx, i.e., the plurality of light emitting units fpx, located at a side of the substrate 100 where the sub-pixels spx are disposed are located between the substrate 100 and the liquid crystal layer 300, and each light emitting unit fpx includes a micro light emitting diode LD and a light emission driving circuit electrically connected to the micro light emitting diode LD to drive the connected micro light emitting diode LD to emit light through the light emission driving circuit. Illustratively, the micro light emitting diode LD may be provided as at least one of a mini LED, an OLED. For example, the micro light emitting diode LD may be configured as a white light mini LED or a blue light mini LED, and may be determined according to the requirements of the practical application, and is not limited herein.
In the embodiment of the present disclosure, one light emitting unit fpx may be disposed corresponding to at least one sub-pixel spx; the light emission driving circuit is electrically connected to the switching transistor in the corresponding sub-pixel spx. Thus, the switch transistor can input control signals for the light-emitting drive circuit to control the light-emitting drive circuit to drive the connected micro light-emitting diode LD to emit light. When the array substrate is applied to a liquid crystal display panel, the micro light emitting diode LD can be used as a backlight source of the liquid crystal display panel to provide a light source for the liquid crystal display panel, and the sub-pixels on the array substrate are used for displaying a picture, so that the picture display function of the liquid crystal display panel is realized. Therefore, the backlight module is not additionally arranged for the liquid crystal display panel, and the whole liquid crystal display panel is more ultrathin. And, the micro light emitting diode LD as a backlight is integrated on the substrate base 100 having the switching transistor, and light emitted from the micro light emitting diode LD may directly enter the liquid crystal layer 300 without passing through the substrate base 100, thereby greatly improving the light source utilization rate. In addition, when designing devices such as a switching transistor on the substrate 100, the problem of the aperture ratio does not have to be considered, so that the size of the devices such as the switching transistor can be made larger, and the driving capability of the devices such as the switching transistor can be improved.
In practical applications, the number of the sub-pixels spx corresponding to one light-emitting unit fpx can be determined according to the requirements of practical applications, and is not limited herein.
In the embodiment of the invention, the array substrate is divided into a plurality of sub-pixel groups PXL; each subpixel group PXL includes M rows and N columns of subpixels spx; wherein M is an integer greater than 1, and N is an integer greater than 1. Also, the light emitting cells fpx are provided in one-to-one correspondence with the subpixel groups PXL; the light-emission driving circuit in the light-emitting unit fpx is electrically connected to each of the switching transistors in the corresponding sub-pixels spx. For example, as shown in fig. 2 and fig. 3, M may be 2 and N may be 2, so that each subpixel group PXL includes 2 adjacent rows and 2 columns of subpixels spx. Alternatively, M may be 3 and N may be 3, so that each subpixel group PXL includes 3 adjacent rows and 3 columns of subpixels spx. Alternatively, M may be 3 and N may be 2, so that each subpixel group PXL includes 3 adjacent rows and 2 columns of subpixels spx. Of course, in practical application, the values of M and N may be designed and determined according to the requirements of practical application, and are not limited herein.
In an embodiment of the present invention, the array substrate further includes: a first light emitting power line VDD and a second light emitting power line VSS; the cathode of each micro light emitting diode LD is electrically connected to the second light emitting power line VSS. The input end of each light-emitting drive circuit is electrically connected with a first light-emitting power line VDD, and the control end of each light-emitting drive circuit is electrically connected with the drain electrodes of the switch transistors in all the corresponding sub-pixels spx; and the output end of the light-emitting drive circuit is electrically connected with the anode of the micro light-emitting diode LD. Illustratively, the first light emitting power line VDD is a voltage source to transmit a constant first power voltage, e.g., the first power voltage is a positive voltage; and the second light emitting power line VSS may be a voltage source to transmit a constant second power voltage, for example, the second power voltage is 0 or a negative voltage, etc. For example, in some examples, the second light emitting power line VSS may be grounded.
In an embodiment of the present invention, a light emission driving circuit includes a plurality of light emission control transistors; the plurality of light emission control transistors are disposed in one-to-one correspondence with the corresponding sub-pixels. The gate of the light emission control transistor is electrically connected to the drain of the switching transistor in the corresponding sub-pixel spx, the source of the light emission control transistor is electrically connected to the first light emission power line VDD, and the anode of the drain of the light emission control transistor is electrically connected to the micro light emitting diode LD. Illustratively, the source of each light emission control transistor is electrically connected to the first light emission power line VDD, and the drains of all the light emission control transistors in the same light emitting cell fpx are electrically connected to the anode of the same micro light emitting diode LD. And the gate of the light emission control transistor is electrically connected to the drain of the switching transistor in the corresponding sub-pixel spx. As shown in fig. 3, one subpixel group PXL includes 4 subpixels spx, and the light emitting driving circuit corresponding to the subpixel group PXL includes 4 light emitting control transistors. For example, the switching transistor T1-1 in the first subpixel spx in the subpixel group PXL corresponds to the light emission controlling transistor T2-1, and the gate of the light emission controlling transistor T2-1 is electrically connected to the drain of the switching transistor T1-1. The switching transistor T1-2 in the second subpixel spx in the subpixel group PXL corresponds to the light emission controlling transistor T2-2, and the gate of the light emission controlling transistor T2-2 is electrically connected to the drain of the switching transistor T1-2. The switching transistor T1-3 in the third subpixel spx in the subpixel group PXL corresponds to the light emission controlling transistor T2-3, and the gate of the light emission controlling transistor T2-3 is electrically connected to the drain of the switching transistor T1-3. The switching transistor T1-4 in the fourth subpixel spx in the subpixel group PXL corresponds to the light emission controlling transistor T2-4, and the gate of the light emission controlling transistor T2-4 is electrically connected to the drain of the switching transistor T1-4. The drains of the emission control transistors T2-1 to T2-4 are electrically connected to the anode of the same micro light emitting diode LD.
In the embodiment of the present invention, as shown in fig. 3 and 5, the layers with the same function in the light emitting control transistor and the switching transistor may be made of the same material and the same layer. For example, the gate line GA, the gate electrode of the emission control transistor, and the gate electrode of the switching transistor may be made of the same material in the same layer. The active layer of the light emission control transistor and the active layer of the switching transistor may be made of the same material. The data line DA, the source and the drain of the emission control transistor, and the source and the drain of the switching transistor may be made of the same material. And, a gate insulating layer 120 is disposed between the layer where the gate electrode of the switching transistor is located and the layer where the active layer is located, the layers where the source electrode and the drain electrode are located are directly in contact with the layer where the active layer is located, and the source electrode and the drain electrode of the switching transistor are of the same material as each other. The pixel electrode 150 may be located on a side of the source of the switching transistor facing away from the substrate 100. An interlayer insulating layer 130 is further provided between the layer where the pixel electrode 150 is located and the layer where the source of the switching transistor is located. The micro light emitting diode LD is located on a side of the pixel electrode 150 facing away from the substrate 100. The light emitting unit fpx further includes: a first pad 161 and a second pad 162 disposed at the same layer as the pixel electrode 150; the first pad 161 is electrically connected to the anode of the micro light emitting diode LD, and the second pad 162 is electrically connected to the cathode of the micro light emitting diode LD.
In the embodiment of the present invention, as shown in fig. 3 and 5, the light emitting unit fpx further includes: first bonding connection portions 191 provided in one-to-one correspondence with the first pads 161, and second bonding connection portions 192 provided in one-to-one correspondence with the second pads 162; wherein the first bonding connection 191 is located between the corresponding first pad 161 and the anode of the micro light emitting diode LD; the second bonding connection 192 is located between the corresponding second pad 162 and the cathode of the micro light emitting diode LD. Illustratively, the first bonding connection 191 and the second bonding connection 192 are disposed in the same layer and material. For example, the first bonding connection 191 may be a metal material, e.g., In, Sn. The first bonding connection 191 may be an ACF paste with conductive particles. Of course, in practical applications, the materials of the first bonding connection 191 and the second bonding connection 192 may be determined according to the requirements of practical applications, and are not limited herein.
In the embodiment of the present invention, as shown in fig. 3 to 5, the array substrate 01 may further include: the common electrode layer 110 is located between the gate of the switching transistor and the substrate base 100, the encapsulation layer 140 is located on a side of the micro light emitting diode LD away from the substrate base 100, the first optical film 170 is located on a side of the encapsulation layer 140 away from the substrate base 100, and the first polarizer 180 is located on a side of the first optical film 170 away from the substrate base 100.
Illustratively, the common electrode layer 110 and the pixel electrode 150 are disposed on the same side of the liquid crystal layer 300, and a horizontal electric field may be formed to drive the liquid crystal to turn over, thereby implementing an image display function.
The common electrode layer 110 may be a transparent conductive material, such as an Indium Tin Oxide (ITO) material, an Indium Zinc Oxide (IZO) material, a carbon nanotube, or graphene, and the like, which is not limited herein.
For example, the pixel electrode 150 may be a transparent conductive material, such as an Indium Tin Oxide (ITO) material, an Indium Zinc Oxide (IZO) material, a carbon nanotube, or graphene, and the like, which is not limited herein.
Illustratively, the encapsulation layer 140 may include a transparent adhesive to protect the micro light emitting diodes LD and to promote uniform diffusion of light emitted from the micro light emitting diodes LD.
Illustratively, the main function of the first optical film layer 170 is to further scatter and reinforce the light emitted from the micro light-emitting diodes LD to form an overall uniform surface light source (similar to a diffusion film of a backlight, which diffuses the light to form a uniform Mura-free surface light source).
In the embodiment of the present invention, as shown in fig. 5, the liquid crystal display panel may further include: the color film layer 210 is located between the liquid crystal layer 300 and the opposite substrate 200, the second optical film layer 220 is located between the color film layer 210 and the opposite substrate 200, and the second polarizer 230 is located on a side of the opposite substrate 200 away from the substrate 100.
For example, the color film layer 210 may include a red color film corresponding to the red sub-pixel spx, a green color film corresponding to the green sub-pixel spx, and a blue color film corresponding to the blue sub-pixel spx, so that red, green, and blue colors can be displayed to display a color image.
Illustratively, the second optical film layer 220 may include at least one of a low-reflection eye-protecting film to improve visual effect.
Illustratively, in the embodiment of the present invention, the switching Transistor and the emission control Transistor may be a Back Channel Etch Thin Film Transistor (BCE TFT) structure based on a-si. Of course, in practical applications, the switching Transistor and the light emitting control Transistor may be Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) structures based on Metal-Oxide-Semiconductor materials, and are not limited herein.
In the embodiment of the present invention, when the micro light emitting diode LD is a blue mini LED, the liquid crystal display panel may further include: and a color conversion layer between the first optical film layer 170 and the first polarizer 180. Illustratively, the color conversion layer may be a quantum dot layer or a fluorescent film.
In the embodiment of the present invention, as shown in fig. 3 and 5, the pixel electrode 150 is also electrically connected to the drain electrode of the switching transistor T1-1 through the second via GK 2. Also, the pixel electrode 150 is electrically connected to the gate of the light emission controlling transistor T2-1 through the first via GK 1. One row of the light emitting cells fpx corresponds to one first light emitting power line VDD and one second light emitting power line VSS. The source of the light emission controlling transistor T2-1 is directly electrically connected to the corresponding first light emission power line VDD, and the first pad 161 is electrically connected to the drain of the corresponding light emission controlling transistor T2-1 through the third via GK 3. The second pad 162 is electrically connected to the corresponding second light-emitting power line VSS through the fourth via GK 4. Thus, the drain of the switching transistor T1-1 and the gate of the light emission controlling transistor T2-1 may be electrically connected through the pixel electrode 150 to form a signal transmission path. The first via GK1 penetrates through the insulating layer between the pixel electrode 150 and the gate of the switching transistor T1-1. The insulating layer may include a gate insulating layer 120 and an interlayer insulating layer 130. The second via hole GK2 penetrates through the interlayer insulating layer 130, the third via hole GK3 penetrates through the interlayer insulating layer 130, and the fourth via hole GK4 penetrates through the interlayer insulating layer 130 and the gate insulating layer 120.
Referring to fig. 2, 3 and 5, T1-1, T1-2, T1-3 and T1-4 are switching transistors respectively controlling 4 sub-pixels. When the four switching transistors T1-1, T1-2, T1-3, T1-4 are turned on, a voltage of a data signal on the data line may be written to the pixel electrode. For example, a voltage Vda1 is inputted to the pixel electrode to which the switching transistor T1-1 is connected, a voltage Vda2 is inputted to the pixel electrode to which the switching transistor T1-2 is connected, a voltage Vda3 is inputted to the pixel electrode to which the switching transistor T1-3 is connected, and a voltage Vda4 is inputted to the pixel electrode to which the switching transistor T1-4 is connected. And a common voltage is applied to the common electrode, the inversion of the liquid crystal can be controlled by an electric field formed between the voltage on the pixel electrode and the common voltage on the common electrode.
Since the pixel electrode to which the switching transistor T1-1 is connected is also electrically connected to the gate of the emission control transistor T2-1, the voltage Vda1 inputted to the pixel electrode to which the switching transistor T1-1 is connected is also inputted to the gate of the emission control transistor T2-1. Therefore, the gate of the light emission control transistor T2-1 can be controlled by the voltage Vda1 to control the light emission control transistor T2-1 to turn on, so as to control the current flowing through the first light emission power line VDD, the light emission control transistor T2-1, the micro light emitting diode LD, and the second light emission power line VSS.
The pixel electrode to which the switching transistor T1-2 is connected is also electrically connected to the gate of the emission control transistor T2-2, and therefore, the voltage Vda2 inputted to the pixel electrode to which the switching transistor T1-2 is connected is also inputted to the gate of the emission control transistor T2-2. Therefore, the gate of the light emission control transistor T2-2 can be controlled by the voltage Vda2 to control the light emission control transistor T2-2 to turn on, so as to control the current flowing through the first light emission power line VDD, the light emission control transistor T2-2, the micro light emitting diode LD, and the second light emission power line VSS.
The pixel electrode to which the switching transistor T1-3 is connected is also electrically connected to the gate of the emission control transistor T2-3, and therefore, the voltage Vda3 inputted to the pixel electrode to which the switching transistor T1-3 is connected is also inputted to the gate of the emission control transistor T2-3. Therefore, the gate of the light emission control transistor T2-3 can be controlled by the voltage Vda3 to control the light emission control transistor T2-3 to turn on, so as to control the current flowing through the first light emission power line VDD, the light emission control transistor T2-3, the micro light emitting diode LD, and the second light emission power line VSS.
The pixel electrode to which the switching transistor T1-4 is connected is also electrically connected to the gate of the emission control transistor T2-4, and therefore, the voltage Vda4 inputted to the pixel electrode to which the switching transistor T1-4 is connected is also inputted to the gate of the emission control transistor T2-4. Therefore, the gate of the light emission control transistor T2-4 can be controlled by the voltage Vda4 to control the light emission control transistor T2-4 to turn on, so as to control the current flowing through the first light emission power line VDD, the light emission control transistor T2-4, the micro light emitting diode LD, and the second light emission power line VSS.
For example, when the liquid crystal inversion is not required, i.e., the control voltages Vda1 Vda4 are low, the corresponding light-emitting control transistors T2-1 to T2-4 are turned off, so that the voltage on the first light-emitting power line VDD is not applied to the micro light-emitting diode LD, and the micro light-emitting diode LD does not emit light, and the region shows pure black.
For example, when at least one of the light emission control transistors T2-1 to T2-4 is turned on, the micro light emitting diode LD still emits light, and the low gray-scale luminance is controlled by the rotation of the liquid crystal.
It should be noted that the entire display of the micro light emitting diode LD controls the display brightness of the micro light emitting diode LD by controlling the voltage on the first light emitting power line VDD, so that the control is more precise and the display contrast is improved.
It should be noted that the manufacturing process of the four light-emitting control transistors T2-1 to T2-4 requires strict control of the manufacturing parameters of the Gate, the tolerance setting is smaller, and the transistor can operate in the saturation region when the VGS voltage is smaller, thereby achieving uniformity of low gray-scale luminance.
Illustratively, the brightness of the backlight may also be changed by controlling the turn-on degree of the light emission control transistors T2-1 to T2-4 and controlling the magnitude of the current flowing through the micro light emitting diodes LD to change the brightness of the micro light emitting diodes LD.
The embodiment of the invention also provides a display device which comprises the liquid crystal display panel provided by the embodiment of the invention. The principle of the display device to solve the problems is similar to the liquid crystal display panel, so the implementation of the display device can be referred to the implementation of the liquid crystal display panel, and repeated details are not repeated herein.
In specific implementation, in the embodiment of the present invention, the display device may be: any product or component with a display function, such as a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator and the like. Other essential components of the display device are understood by those skilled in the art, and are not described herein or should not be construed as limiting the invention.
According to the array substrate, the liquid crystal display panel and the display device provided by the embodiment of the invention, the micro light-emitting diodes are arranged on the substrate on which the sub-pixels are formed, when the array substrate is applied to the liquid crystal display panel, the micro light-emitting diodes can be used as a backlight source of the liquid crystal display panel to provide a light source for the liquid crystal display panel, and the sub-pixels on the array substrate are used for displaying pictures, so that the picture display function of the liquid crystal display panel is realized. Therefore, the backlight module is not additionally arranged for the liquid crystal display panel, and the whole liquid crystal display panel is more ultrathin. And the micro light-emitting diode serving as the backlight source is integrated on the substrate base plate with the switching transistor, and light emitted by the micro light-emitting diode can directly enter the liquid crystal layer without passing through the substrate base plate, so that the utilization rate of a light source is greatly improved. And, when designing devices such as switching transistors on the substrate, the problem of aperture ratio does not need to be considered, so that the size of the devices such as switching transistors can be made larger, and the driving capability of the devices such as switching transistors can be improved.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (11)
1. An array substrate, comprising:
a substrate base plate;
a plurality of sub-pixels located at one side of the substrate base plate; wherein the sub-pixel includes a pixel electrode and a switching transistor electrically connected to the pixel electrode;
a plurality of light emitting cells located at one side of the substrate base plate where the sub-pixels are disposed; the light-emitting unit comprises a micro light-emitting diode and a light-emitting driving circuit electrically connected with the micro light-emitting diode;
wherein one of the light emitting units is disposed corresponding to at least two of the sub-pixels; the light emission driving circuit is electrically connected to the switching transistor in the corresponding sub-pixel.
2. The array substrate of claim 1, wherein the array substrate is divided into a plurality of sub-pixel groups; each sub-pixel group comprises M rows and N columns of sub-pixels; wherein M is an integer greater than 1, and N is an integer greater than 1;
the light-emitting units and the sub-pixel groups are arranged in a one-to-one correspondence manner;
and the light-emitting drive circuit in the light-emitting unit is electrically connected with the switch transistor in the corresponding sub-pixel.
3. The array substrate of claim 2, wherein the array substrate further comprises:
a plurality of gate lines; the grid electrodes of the switching transistors in one row of sub-pixels are electrically connected with one grid line;
a plurality of data lines; the source electrodes of the switching transistors in one column of sub-pixels are electrically connected with one data line;
a first light emitting power line; the input end of each light-emitting driving circuit is electrically connected with the first light-emitting power line;
a second light emitting power line; the cathode of each micro light-emitting diode is electrically connected with the second light-emitting power line;
wherein the drain of the switching transistor in the same sub-pixel is electrically connected to the pixel electrode; the control end of the light-emitting drive circuit is electrically connected with the drains of the switching transistors in all the corresponding sub-pixels; and the output end of the light-emitting drive circuit is electrically connected with the anode of the micro light-emitting diode.
4. The array substrate of claim 3, wherein the emission driving circuit comprises a plurality of emission control transistors; the plurality of light-emitting control transistors are arranged in one-to-one correspondence with the corresponding sub-pixels;
the grid electrode of the light-emitting control transistor is electrically connected with the drain electrode of the switch transistor in the corresponding sub-pixel, the source electrode of the light-emitting control transistor is electrically connected with the first light-emitting power supply line, and the drain electrode of the light-emitting control transistor is electrically connected with the anode of the micro light-emitting diode.
5. The array substrate of claim 4, wherein the layers with the same function in the light-emitting control transistor and the switching transistor are made of the same material and the same layer.
6. The array substrate of claim 5, wherein the pixel electrode is located on a side of the source of the switching transistor facing away from the substrate; the pixel electrode is also electrically connected with the grid electrode of the light-emitting control transistor through a first via hole; wherein the first via hole penetrates through an insulating layer between the pixel electrode and a gate of the switching transistor;
the micro light-emitting diode is positioned on one side of the pixel electrode, which is far away from the substrate;
the light emitting unit further includes: a first bonding pad and a second bonding pad arranged on the same layer as the pixel electrode; the first bonding pad is electrically connected with the anode of the micro light-emitting diode, and the second bonding pad is electrically connected with the cathode of the micro light-emitting diode.
7. The array substrate of claim 6, wherein the light emitting unit further comprises: the first bonding connecting parts are arranged in one-to-one correspondence with the first bonding pads, and the second bonding connecting parts are arranged in one-to-one correspondence with the second bonding pads;
the first bonding connecting parts are positioned between the corresponding first bonding pads and the anodes of the micro light-emitting diodes;
the second bonding connecting part is positioned between the corresponding second bonding pad and the cathode of the micro light-emitting diode.
8. A liquid crystal display panel, comprising:
an array substrate according to any one of claims 1 to 7;
the opposite substrate is arranged opposite to the array substrate;
and the liquid crystal layer is packaged between the array substrate and the opposite substrate.
9. The liquid crystal display panel according to any one of claim 8, wherein the array substrate further comprises: the packaging layer is positioned on one side, away from the substrate base plate, of the micro light-emitting diode, the first optical film layer is positioned on one side, away from the substrate base plate, of the packaging layer, and the first polarizer is positioned on one side, away from the substrate base plate, of the first optical film layer;
the liquid crystal display panel further includes: the liquid crystal display panel comprises a liquid crystal layer, a counter substrate, a color film layer, a second optical film layer and a second polarizer, wherein the color film layer is positioned between the liquid crystal layer and the counter substrate, the second optical film layer is positioned between the color film layer and the counter substrate, and the second polarizer is positioned on one side, away from the substrate, of the counter substrate.
10. The liquid crystal display panel of claim 9, wherein the micro light emitting diodes are white mini LEDs;
or, the micro light emitting diode is a blue mini LED, and the liquid crystal display panel further includes: and the color conversion layer is positioned between the first optical film layer and the first polarizer.
11. A display device comprising the liquid crystal display panel according to any one of claims 8 to 10.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111390952.5A CN114077110B (en) | 2021-11-23 | 2021-11-23 | Array substrate, liquid crystal display panel and display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111390952.5A CN114077110B (en) | 2021-11-23 | 2021-11-23 | Array substrate, liquid crystal display panel and display device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114077110A true CN114077110A (en) | 2022-02-22 |
| CN114077110B CN114077110B (en) | 2023-11-03 |
Family
ID=80284281
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111390952.5A Active CN114077110B (en) | 2021-11-23 | 2021-11-23 | Array substrate, liquid crystal display panel and display device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114077110B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023159387A1 (en) * | 2022-02-23 | 2023-08-31 | 京东方科技集团股份有限公司 | Array substrate and light-emitting device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20080039045A (en) * | 2006-10-31 | 2008-05-07 | 삼성전자주식회사 | Display apparatus |
| CN101447459A (en) * | 2007-11-29 | 2009-06-03 | 卡西欧计算机株式会社 | Display panel and manufacturing method of display panel |
| CN108648675A (en) * | 2018-05-09 | 2018-10-12 | 武汉天马微电子有限公司 | Display substrate, display panel and display device |
| CN109212832A (en) * | 2018-10-30 | 2019-01-15 | 京东方科技集团股份有限公司 | A kind of liquid crystal display panel and preparation method thereof, liquid crystal display device |
| CN110707120A (en) * | 2019-10-30 | 2020-01-17 | 深圳市华星光电半导体显示技术有限公司 | Display panel, manufacturing method and spliced display panel |
| US20210193013A1 (en) * | 2019-12-24 | 2021-06-24 | Beijing Boe Technology Development Co., Ltd. | Array substrate, display panel and display device |
-
2021
- 2021-11-23 CN CN202111390952.5A patent/CN114077110B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20080039045A (en) * | 2006-10-31 | 2008-05-07 | 삼성전자주식회사 | Display apparatus |
| CN101447459A (en) * | 2007-11-29 | 2009-06-03 | 卡西欧计算机株式会社 | Display panel and manufacturing method of display panel |
| CN108648675A (en) * | 2018-05-09 | 2018-10-12 | 武汉天马微电子有限公司 | Display substrate, display panel and display device |
| CN109212832A (en) * | 2018-10-30 | 2019-01-15 | 京东方科技集团股份有限公司 | A kind of liquid crystal display panel and preparation method thereof, liquid crystal display device |
| CN110707120A (en) * | 2019-10-30 | 2020-01-17 | 深圳市华星光电半导体显示技术有限公司 | Display panel, manufacturing method and spliced display panel |
| US20210193013A1 (en) * | 2019-12-24 | 2021-06-24 | Beijing Boe Technology Development Co., Ltd. | Array substrate, display panel and display device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023159387A1 (en) * | 2022-02-23 | 2023-08-31 | 京东方科技集团股份有限公司 | Array substrate and light-emitting device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114077110B (en) | 2023-11-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20200380917A1 (en) | Display screen, display device integrated with display screen, and cover plate | |
| WO2022242287A1 (en) | Pixel drive circuit, display panel and control method therefor, and display device | |
| KR101680780B1 (en) | Dual-side display, device for controlling the dual-side display and method for manufacturing the same | |
| US10354595B2 (en) | Organic light-emitting diode pixel structure | |
| CN109491134B (en) | Display device | |
| KR20030073738A (en) | an active matrix organic electroluminescence display device | |
| WO2021232411A1 (en) | Display substrate, display panel, and display device | |
| US12033594B2 (en) | Backlight driving circuit and display device | |
| US20230363228A1 (en) | Display substrate and display device | |
| CN109637455B (en) | Array substrate, driving method thereof, display panel and display device | |
| TW202011629A (en) | MicroLED display panel | |
| CN103971634A (en) | Pixel unit driving circuit, display substrate, display panel and display device | |
| JP2019008200A (en) | Electronic device | |
| WO2021077487A1 (en) | Pixel unit and display panel | |
| WO2018107736A1 (en) | Display panel and display device | |
| US20050105284A1 (en) | Backlight device and display apparatus | |
| CN114077110B (en) | Array substrate, liquid crystal display panel and display device | |
| WO2016197524A1 (en) | Organic electroluminescent display device, display apparatus, and manufacturing method therefor | |
| CN206249825U (en) | Display panel and display device | |
| US8519618B2 (en) | Display | |
| US20150049465A1 (en) | Backlight unit, display device including the same, and method of manufacturing the same | |
| US20230307597A1 (en) | Display device using micro led | |
| KR20220000015A (en) | Display device | |
| WO2022062064A1 (en) | Display panel and display device | |
| CN105679199A (en) | Display device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |