CN113278930B - Nanocluster beam density control device and application method thereof - Google Patents

Nanocluster beam density control device and application method thereof Download PDF

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CN113278930B
CN113278930B CN202110449959.3A CN202110449959A CN113278930B CN 113278930 B CN113278930 B CN 113278930B CN 202110449959 A CN202110449959 A CN 202110449959A CN 113278930 B CN113278930 B CN 113278930B
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hole
control device
cluster
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CN113278930A (en
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刘风光
吴鹏
赵巍胜
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Hefei Innovation Research Institute of Beihang University
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks

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  • Nanotechnology (AREA)
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  • Metallurgy (AREA)
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Abstract

The invention discloses a beam density control device of nanoclusters and a using method of the beam density control device. According to the invention, the beam density control device, namely the beam splitting channel and the control device for adjusting the beam splitting channel, is arranged, so that the deposition density of the cluster beam is conveniently adjusted, and partial cluster beams are separated or deposited by an additional channel, thereby enlarging the deposition gap and achieving the purpose of controlling the density.

Description

Nanocluster beam density control device and application method thereof
Technical Field
The invention relates to the technical field of nanocluster deposition, in particular to a nanocluster beam density control device and a using method thereof.
Background
The on-line measuring system for the comprehensive deposition of the nanocluster beam is used for preparing a gas cluster, forming the cluster beam, measuring the size distribution of the cluster, controllably depositing the cluster beam, co-depositing a film and on-line measuring the property of the film with the cluster assembled nano structure. The cluster beam of refractory metals, semiconductors, oxides, alloys and other materials can be obtained by taking a magnetron plasma aggregation type cluster source as a core.
In the prior art, for example, a WO3 cluster beam deposition system disclosed in patent CN103789738B and a method for preparing a WO3 thin film by using the same include the following steps: 1) Selecting a WO3 ceramic target as a sputtering target material; 2) Cleaning the substrate and fixing the substrate on a substrate base of a high vacuum deposition chamber; 3) Pre-vacuumizing by using a mechanical pump and a molecular pump to ensure that the vacuum pressure of the deposition chamber is less than or equal to 1 x 10 < -5 > Pa; 4) Introducing liquid nitrogen into a pipeline on the side wall of the cluster source chamber, respectively introducing inert gases Ar and He through a sputtering gas inlet and a buffer gas inlet to enable the pressure of the cluster source chamber to reach 100-500 Pa, and using the cluster source chamberThe sputtering power supply is used for gradually growing the WO3 cluster by continuously colliding sputtered W ions and O ions with He atoms in the cluster source chamber through a gas gathering method; 5) The formed WO3 directional cluster beam is aligned with the substrate to start deposition, and the deposition rate is
Figure BDA0003038284750000011
The deposition time is 10 to 30 minutes, and a WO3 cluster film with the thickness of 100 to 200 nanometers is formed on the substrate; 6) The obtained WO3 cluster film is annealed for 5 to 10 minutes at the temperature of between 400 and 600 ℃ by a rapid heat treatment system.
However, the cluster beam current is usually output only through the aerodynamic nozzle, one beam current nozzle is very small, the stability of air pressure must be guaranteed, the density of the beam current cannot be adjusted, and the flexibility is poor.
Disclosure of Invention
The present invention is directed to solving the above problems, and an object of the present invention is to provide a beam density control apparatus for nanoclusters and a method of using the same.
In order to achieve the purpose, the invention discloses a beam density control device of a nanocluster, which comprises a condensation cavity, a differential vacuum cavity and a deposition cavity, wherein an air pipe, a sputtering gun and a liquid nitrogen spray pipe are arranged in the condensation cavity;
and a conical body is arranged between the differential vacuum cavity and the deposition cavity, and a beam current restriction small hole and a beam current density control device are arranged on the conical body.
Optionally, the beam density control device is composed of a beam splitting channel and a control device for adjusting the beam splitting channel.
Optionally, the adjusting beam current splitting channel includes a first current splitting hole disposed on the cone, a baffle rotatably connected to the cone, a motor disposed at a joint of the baffle and the cone and driven by the motor to rotate, and a second current splitting hole disposed on the baffle.
Optionally, the first branch holes and the second branch holes are arranged in a staggered manner, and when the baffle plate is attached to the conical body, the first branch holes and the second branch holes are closed; otherwise, the two are communicated.
Optionally, the control device includes a push rod motor, a partition plate, a plate electrode, a fixing plate and an electric field generator, the electric field generator is electrically connected to the plate electrode, the push rod motor is disposed on the baffle plate, the partition plate is disposed on the push rod of the push rod motor, the fixing plate is disposed on the partition plate, and the plate electrode is disposed on the fixing plate.
The invention also discloses a using method of the beam density control device of the nanocluster,
the invention has the following advantages:
according to the invention, the beam density control device, namely the beam shunting channel and the control device for adjusting the beam shunting channel, is arranged, so that the deposition density of the cluster beam can be conveniently adjusted, and part of the cluster beam is separated or deposited by passing through an additional channel, thereby enlarging the deposition gap and achieving the purpose of controlling the density;
an extra cluster beam channel is provided for cluster beams through the beam current splitting channel, the first current splitting holes and the second current splitting holes are arranged in a staggered mode, and when the baffle is attached to the conical body, the first current splitting holes and the second current splitting holes are closed; otherwise, the two are communicated, so that an additional cluster beam channel can be provided.
Through the control device and the electric field generator, part of polar cluster beam passes through the first shunt hole and the second shunt hole to be deposited on the electrode plate, the cluster beam output by the beam restraint small hole is reduced, the baffle is driven to move up and down through the single push rod, when the baffle moves upwards, the flow of the second shunt hole on the upper side of the baffle is reduced, the flow of the lower side of the baffle is increased, and the effect of adjusting the deposition density is achieved.
Drawings
Fig. 1 is a schematic structural diagram of a nanocluster beam density control apparatus and a method for using the same according to the present invention;
FIG. 2 is a view showing a beam density control apparatus according to the present invention;
FIG. 3 is a schematic view of a state of the beam density control apparatus according to the present invention;
fig. 4 is a schematic view of another state of the beam density control apparatus according to the present invention.
In the figure: the device comprises a condensation cavity 1, a gas pipe 2, a sputter gun 3, a liquid nitrogen spray pipe 4, a differential vacuum cavity 5, a Roots pump 6, a molecular pump 7, a pneumatic spray head 8, a cone 9, a beam flow restriction small hole 10, a beam flow density control device 11, a push rod motor 111, a baffle 112, a partition plate 113, an electrode plate 114, a fixed plate 115, an electric field generator 116, a first shunt hole 117, a second shunt hole 118 and a deposition cavity 12.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments.
Referring to fig. 1-4, a nanocluster beam density control device comprises a condensation chamber 1, a differential vacuum chamber 5 and a deposition chamber 12, wherein an air pipe 2, a sputtering gun 3 and a liquid nitrogen spray pipe 4 are arranged in the condensation chamber 1, a roots pump 6 is arranged in the condensation chamber 1, molecular pumps are arranged in the differential vacuum chamber 5 and the deposition chamber 12, and a pneumatic spray head 8 is arranged between the condensation chamber 1 and the differential vacuum chamber 5.
The cluster beam is diverged through the aerodynamic nozzle 8, so that the divergent beam with uneven size distribution can be blocked by the small restraint holes, and only the uniformly distributed cluster beam is left to continue flying.
The beam density control device 11 is composed of a beam splitting channel and a control device for adjusting the beam splitting channel, and is specifically set as follows:
the adjusted beam current splitting channel comprises a first splitting hole 117 arranged on the conical body 9, a baffle plate 112 rotatably connected on the conical body 9, a motor arranged at the joint of the baffle plate 112 and the conical body 9 and driven by the motor to rotate, and a second splitting hole 118 arranged on the baffle plate 112, wherein in the embodiment, the first splitting hole 117 and the second splitting hole 118 are arranged in a staggered manner, and when the baffle plate 112 is attached to the conical body 9, the first splitting hole 117 and the second splitting hole 118 are closed; otherwise, the two are communicated, so that an additional cluster beam channel can be provided.
Control device includes push rod motor 111, baffle 113, electrode plate 114, fixed plate 115 and electric field generator 116, electric field generator 116 and electrode plate 114 electric connection, push rod motor 111 sets up on baffle 112 and is provided with baffle 113 on its push rod, be provided with fixed plate 115 on the baffle 113, electrode plate 114 sets up on fixed plate 115, and baffle 113 and fixed plate 115 all adopt insulating material, and electric field generator 116 can use the power, and the quantity of electrode plate 114 is two and the even strong electric field of symmetrical production of placing.
The use method of the beam density control device of the nanoclusters comprises the following steps:
step one, starting a roots pump 6 and a molecular pump 7 to vacuumize a condensation cavity 1, a differential vacuum cavity 5 and a deposition cavity 12, and gradually reducing the pressure of the condensation cavity 1, the differential vacuum cavity 5 and the deposition cavity 12;
introducing liquid nitrogen into the condensation cavity 1 through a liquid nitrogen spray pipe 4, after the condensation cavity 1 is condensed, filling buffer gas and sputtering gas into the condensation cavity 1 through a gas pipe 2, starting a sputtering power supply, starting sputtering, and expanding and condensing atoms and ions in the buffer gas to cause nucleation and grow into clusters;
thirdly, the clusters jet directional cluster beams into the differential vacuum cavity 5 through the aerodynamic nozzle 8, the clusters enter the differential vacuum cavity 5 to stop cluster growth, the conical body 9 blocks the divergent beams with uneven size distribution, and only the uniformly distributed cluster beams are left to continuously fly to enter the deposition cavity 12 through the beam constraint small holes 10;
step four, the baffle 112 is attached to the conical body 9 in a normal state, the first shunt hole 117 and the second shunt hole 118 are closed, when the cluster beam density needs to be adjusted, the driving motor is started to operate, the baffle 112 rotates, so that the first shunt hole 117 is communicated with the second shunt hole 118, the electric field generator 116 is started, part of polar cluster beams pass through the first shunt hole 117 and the second shunt hole 118 and are deposited on the electrode plate 114, and at the moment, the cluster beams output by the beam confinement small hole 10 are reduced;
and step five, starting the push rod motor 111, driving the partition plate 113 to move up and down by the push rod motor 111, and when the partition plate 113 moves upwards, reducing the flow of the second branch flow hole 118 on the upper side of the partition plate 113 and increasing the flow of the lower side of the partition plate 113.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered to be within the technical scope of the present invention, and the technical solutions and the inventive concepts thereof according to the present invention should be equivalent or changed within the scope of the present invention. In the present invention, unless otherwise specifically stated or limited, the terms "cover", "fitted", "attached", "fixed", "distributed", and the like are to be understood in a broad sense, and may be, for example, fixedly attached, detachably attached, or integrated; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood according to specific situations by those of ordinary skill in the art.

Claims (3)

1. The beam density control device for the nanoclusters is characterized by comprising a condensation cavity (1), a differential vacuum cavity (5) and a deposition cavity (12), wherein an air pipe (2), a sputtering gun (3) and a liquid nitrogen spray pipe (4) are arranged in the condensation cavity (1), a roots pump (6) is arranged in the condensation cavity (1), molecular pumps are arranged in the differential vacuum cavity (5) and the deposition cavity (12), and a pneumatic sprayer (8) is arranged between the condensation cavity (1) and the differential vacuum cavity (5);
a conical body (9) is arranged between the differential vacuum cavity (5) and the deposition cavity (12), and a beam current restriction small hole (10) and a beam current density control device (11) are arranged on the conical body;
the beam density control device (11) consists of a beam shunt channel and a control device for adjusting the beam shunt channel;
the beam current dividing channel comprises a first current dividing hole (117) arranged on the conical body (9), a baffle plate (112) rotationally connected to the conical body (9), a motor is arranged at the joint of the baffle plate (112) and the conical body (9) and driven by the motor to rotate, and a second current dividing hole (118) arranged on the baffle plate (112);
the first flow dividing holes (117) and the second flow dividing holes (118) are arranged in a staggered mode, and when the baffle plate (112) is attached to the conical body (9), the first flow dividing holes (117) and the second flow dividing holes (118) are closed; otherwise, the two are communicated.
2. The device for controlling the beam current density of the nanoclusters according to claim 1, wherein the device comprises a push rod motor (111), a partition plate (113), an electrode plate (114), a fixing plate (115) and an electric field generator (116), the electric field generator (116) is electrically connected with the electrode plate (114), the push rod motor (111) is arranged on the baffle plate (112) and the partition plate (113) is arranged on a push rod of the push rod motor, the fixing plate (115) is arranged on the partition plate (113), and the electrode plate (114) is arranged on the fixing plate (115).
3. The method of claim 2, wherein the method comprises the steps of:
step one, starting a roots pump (6) and a molecular pump (7) to vacuumize a condensation cavity (1), a differential vacuum cavity (5) and a deposition cavity (12) to form that the pressure of the condensation cavity (1), the differential vacuum cavity (5) and the deposition cavity (12) is gradually reduced;
introducing liquid nitrogen into the condensation cavity (1) through a liquid nitrogen spray pipe (4), waiting for the condensation of the condensation cavity (1), filling buffer gas and sputtering gas into the condensation cavity (1) through an air pipe (2), starting a sputtering power supply, starting sputtering, expanding and condensing atoms and ions in the buffer gas, and causing nucleation and growth into clusters;
thirdly, the clusters jet directional cluster beams into the differential vacuum cavity (5) through the aerodynamic nozzle (8), the clusters enter the differential vacuum cavity (5) to stop cluster growth, the conical body (9) blocks the divergent beams with uneven size distribution, and only the uniformly distributed cluster beams are left to continuously fly through the beam constraint small holes (10) and enter the deposition cavity (12);
step four, the baffle (112) is attached to the conical body (9) in a normal state, the first shunt hole (117) and the second shunt hole (118) are closed, when cluster beam density needs to be adjusted, the driving motor is started to operate, the baffle (112) rotates to enable the first shunt hole (117) to be communicated with the second shunt hole (118), the electric field generator (116) is started, so that part of polar cluster beams pass through the first shunt hole (117) and the second shunt hole (118) to be deposited on the electrode plate (114), and at the moment, the cluster beams output by the beam confinement small hole (10) are reduced;
and step five, starting the push rod motor (111), driving the partition plate (113) to move up and down by the push rod motor (111), and when the partition plate (113) moves upwards, reducing the flow of the second branch flow hole (118) on the upper side of the partition plate (113) and increasing the flow of the lower side of the partition plate (113).
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