CN113199683A - 一种提升太阳电池表面光能俘获的微纳结构及制备方法 - Google Patents
一种提升太阳电池表面光能俘获的微纳结构及制备方法 Download PDFInfo
- Publication number
- CN113199683A CN113199683A CN202110468217.5A CN202110468217A CN113199683A CN 113199683 A CN113199683 A CN 113199683A CN 202110468217 A CN202110468217 A CN 202110468217A CN 113199683 A CN113199683 A CN 113199683A
- Authority
- CN
- China
- Prior art keywords
- pdms
- array structure
- micro
- convex hull
- nano
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 239000002086 nanomaterial Substances 0.000 title claims abstract description 10
- 210000004027 cell Anatomy 0.000 title claims description 27
- 239000004205 dimethyl polysiloxane Substances 0.000 claims abstract description 62
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims abstract description 62
- 239000011521 glass Substances 0.000 claims abstract description 43
- 238000000034 method Methods 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 230000008569 process Effects 0.000 claims abstract description 8
- 239000000203 mixture Substances 0.000 claims abstract description 6
- 238000005459 micromachining Methods 0.000 claims abstract description 3
- 239000002313 adhesive film Substances 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 10
- 239000003292 glue Substances 0.000 claims description 10
- 238000001259 photo etching Methods 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- -1 polydimethylsiloxane Polymers 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 3
- 238000005086 pumping Methods 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 2
- 238000010884 ion-beam technique Methods 0.000 claims description 2
- 238000009489 vacuum treatment Methods 0.000 claims description 2
- 238000001723 curing Methods 0.000 claims 2
- 230000000737 periodic effect Effects 0.000 claims 2
- 239000000463 material Substances 0.000 claims 1
- 150000003961 organosilicon compounds Chemical class 0.000 claims 1
- 235000013870 dimethyl polysiloxane Nutrition 0.000 abstract description 43
- 239000010408 film Substances 0.000 abstract description 9
- 239000010409 thin film Substances 0.000 abstract description 6
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 230000003287 optical effect Effects 0.000 abstract description 3
- 230000031700 light absorption Effects 0.000 abstract description 2
- 230000009467 reduction Effects 0.000 abstract description 2
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 abstract 4
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 abstract 4
- 239000010410 layer Substances 0.000 description 14
- 239000004005 microsphere Substances 0.000 description 6
- 239000002356 single layer Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000002077 nanosphere Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000005357 flat glass Substances 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000001291 vacuum drying Methods 0.000 description 2
- DLKQHBOKULLWDQ-UHFFFAOYSA-N 1-bromonaphthalene Chemical compound C1=CC=C2C(Br)=CC=CC2=C1 DLKQHBOKULLWDQ-UHFFFAOYSA-N 0.000 description 1
- 241000282414 Homo sapiens Species 0.000 description 1
- 206010035148 Plague Diseases 0.000 description 1
- 241000607479 Yersinia pestis Species 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 229940057995 liquid paraffin Drugs 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 239000002120 nanofilm Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000010076 replication Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000004083 survival effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C41/00—Shaping by coating a mould, core or other substrate, i.e. by depositing material and stripping-off the shaped article; Apparatus therefor
- B29C41/02—Shaping by coating a mould, core or other substrate, i.e. by depositing material and stripping-off the shaped article; Apparatus therefor for making articles of definite length, i.e. discrete articles
- B29C41/08—Coating a former, core or other substrate by spraying or fluidisation, e.g. spraying powder
- B29C41/10—Coating a former, core or other substrate by spraying or fluidisation, e.g. spraying powder by fluidisation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C41/00—Shaping by coating a mould, core or other substrate, i.e. by depositing material and stripping-off the shaped article; Apparatus therefor
- B29C41/34—Component parts, details or accessories; Auxiliary operations
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C41/00—Shaping by coating a mould, core or other substrate, i.e. by depositing material and stripping-off the shaped article; Apparatus therefor
- B29C41/34—Component parts, details or accessories; Auxiliary operations
- B29C41/50—Shaping under special conditions, e.g. vacuum
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
- B29K2083/00—Use of polymers having silicon, with or without sulfur, nitrogen, oxygen, or carbon only, in the main chain, as moulding material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29L—INDEXING SCHEME ASSOCIATED WITH SUBCLASS B29C, RELATING TO PARTICULAR ARTICLES
- B29L2007/00—Flat articles, e.g. films or sheets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
本发明提供的是一种提升太阳电池表面光能俘获的微纳结构及制备方法。其特征是:首先将太阳能级玻璃衬底a经过微加工工艺制备成凹坑阵列结构玻璃b,接着在凹坑阵列结构上浇注PDMS溶胶形成PDMS溶胶与结构玻璃混合体c,最后将固化后的PDMS胶膜进行拔模,制备出带有表面微纳凸包阵列结构的PDMS胶膜d。本发明应用于薄膜太阳能电池的上表面形成表面陷光结构,相对于平板结构能有效减少光反射,增加光吸收,延长光程,加强表面光能俘获能力,最终提升太阳能电池的光电转化效率。本发明能重复多次的利用凹坑阵列结构玻璃制备表面微纳凸包阵列结构,具有工艺简单,降低成本的优点。
Description
(一)技术领域
本发明涉及一种提升太阳电池表面光能俘获的微纳结构及制备方法,属于太阳能电池领域,具体涉及微纳加工工艺,光电子器件。
(二)背景技术
随着世界人口的日益增长以及不可再生资源的逐渐短缺,在可预见的未来,能源问题将成为困扰人类生存与发展的主要问题之一,能源之争也会成为世界各国所需要考虑的战略问题。作为新能源之一的太阳能,其具有无污染,可再生,总量大,分布广等优点,越来越受到人们的重视。薄膜太阳能电池是近年来开发利用太阳能资源的主要方式,所以如何提升薄膜太阳能电池的光电转化效率已成为从事太阳能电池行业等科研人员的研究重点。
微纳陷光结构具有降低光反射,减少光能逃逸以及增加光程长度等特性,能有效提升太阳能电池的光电转化效率。其中的纳米微球阵列结构,因其较大的表面积和良好的光学特性,在太阳能电池领域具有广泛的应用,所以如何制备出理想的纳米微球阵列结构是一个非常重要的研究课题。黄富强与李德增于2011年公开的一种宽带减返增透纳米结构及其制备方法(中国专利:202010571961.X)主要是采用了溶胶-凝胶技术在纳米薄膜上制备一层纳米球阵列结构,或是将纳米球分散在前驱液中制备复合薄膜;李静等人于2013年公开的一种ZnO球形空壳结构纳米颗粒阵列的制备方法(中国专利:201310012724.3)主要是采用了旋涂-反应离子刻蚀-沉积-退火的技术方法在太阳能电池表面制备出ZnO球形空壳结构纳米颗粒阵列;梁继然等人于2016年公开的一种单层有序二氧化硅纳米球阵列的制备(中国专利:201610565422.2)主要是采用了引流分散提拉法在室温下制备出了一层单层有序二氧化硅纳米球阵列。上述制备方法都制备出了纳米微球阵列结构,但所制备的纳米球阵列在其整齐排列性以及单层有序性都比较难以保证,且都是利用制备好的纳米微球进行阵列结构的制备,技术方法都比较缺乏独立性。
本发明公开了一种提升太阳电池表面光能俘获的微纳结构及制备方法。该发明是以太阳能级玻璃为衬底,在所述衬底表面制备凹坑阵列结构,然后以该凹坑阵列结构玻璃为模板,在上面浇注PDMS膜,将结构玻璃上的凹坑结构转移到PDMS胶上,制备出微纳凸包阵列结构(类纳米微球阵列结构)。与在先技术相比,本发明能够制备出整齐排列且单层有序的微纳凸包阵列结构,对于制备出的凹坑阵列结构玻璃能够重复多次使用,具有工艺简单,降低成本的优点。
(三)发明内容
本发明的目的在于提供一种提升太阳电池表面光能俘获的微纳结构及制备方法。
本发明的目的是这样实现的:
一种提升太阳电池表面光能俘获的微纳结构及制备方法。其特征是:首先将太阳能级玻璃衬底a经过微加工工艺制备成凹坑阵列结构玻璃b,接着在凹坑阵列结构上浇注PDMS溶胶形成PDMS溶胶与结构玻璃混合体c,最后将固化后的PDMS胶膜进行拔膜,制备出带有表面微纳凸包阵列结构的PDMS胶膜d。所述结构的制备工艺中,太阳能级玻璃衬底a需要经过RCA(标准清洗法)步骤进行彻底的清洗,然后通过光刻、显影、离子束刻蚀等微加工工艺,结合HF刻蚀与干法刻蚀的方法,在太阳能级玻璃衬底的表面上形成凹坑阵列结构,制备出凹坑阵列结构玻璃b,接着将调配好的的PDMS溶胶浇注在凹坑阵列结构玻璃上面进行浇注并进行真空处理,采取70度的温度对PDMS胶进行不小于4小时的加热固化,最后将固化好的微纳结构胶膜进行拔膜,制备出带有表面微纳凸包阵列结构的PDMS胶膜d。
所述的凹坑阵列结构玻璃的具体制备流程为:其一,采用RCA清洗法对太阳能级玻璃进行清洗处理;其二,采用磁控溅射法在清洁玻璃表面先后溅射Cr层和Cu层;其三,在Cr/Cu金属种子层上旋涂光刻胶,然后进行烘干处理;其四,在光刻设备中采用350-450的紫外光对样品进行光刻处理,然后在显影液中显影,最后用70-90度的温度对样品进行烘烤;其五,采用丙酮溶液对烘烤完成后的样品进行去胶处理;其六,采用HF溶液对样品进行刻蚀处理;最后,采用硝酸铈铵和高氯刻蚀液对刻蚀后的样品进行去除金属种子层处理,制备出凹坑阵列结构玻璃。其中,若凹坑阵列结构玻璃的深宽比少于0.5,可以只采用HF刻蚀法刻蚀玻璃,若深宽比大于0.5则需采用RIE刻蚀与HF刻蚀相结合的方法。所述凹坑阵列结构玻璃的周期与深度为微纳米级别。
所诉的表面微纳凸包阵列结构的具体制备流程为:其一,将PDMS主体胶与固体剂按(10:1,质量比)均匀混合,并在真空干燥箱中进行抽真空处理,以排除PDMS混合胶中残留的空气;其二,将抽除空气后的PDMS混合胶浇注在上述制备的凹坑阵列结构玻璃模板上,并再次在真空干燥箱中进行抽真空处理,以确保胶体内和结构坑内的空气皆尽排出。其三,采用70度的温度将PDMS溶胶与结构玻璃混合体加热不少于4小时,将PDMS溶胶完全固化;其四,采用脱膜工艺将PDMS胶膜和凹坑阵列结构玻璃模板分离,制备出带有表面微纳凸包阵列结构的PDMS胶膜。所述微纳凸包阵列结构的尺寸与周期为微纳米级别。
(四)附图说明
图1是表面微纳凸包阵列结构制备的整体流程示意图。图中,(a)为太阳能级玻璃衬底;(b)为凹坑阵列结构玻璃;(c)为PDMS溶胶与结构玻璃混合体;(d)为带有表面微纳凸包阵列结构的PDMS胶膜。
图2是表面微纳凸包阵列结构高宽比约为0.4的PDMS胶膜剖面图,高宽比=高/宽。
图3是表面微纳凸包阵列结构高宽比约为0.4的PDMS胶膜覆盖在薄膜太阳能电池上表面的剖面示意图。图中,1为微纳凸包阵列结构PDMS胶膜;2为折射率匹配液;3为太阳能级平板玻璃;4为电池前电极层;5为电池p-i-n结构层;6为背电极层及过渡层;7为背面反射层。
图4是平板PDMS太阳能电池与表面微纳凸包阵列结构PDMS太阳能电池的外量子效率对比曲线图。
图5是表面微纳凸包阵列结构高宽比约为0.4,放大500倍的PDMS胶膜电镜图。
(五)具体实施方式
下面结合具体的实施例来进一步阐述本发明。
图2给出了表面微纳凸包阵列结构高宽比约为0.4的PDMS胶膜制备实施例。其具体实施步骤为:首先通过光刻、显影及刻蚀等工艺在太阳能级玻璃上制备周期约为20μm,深宽比约为0.4的半球凹坑阵列结构;其次将PDMS主体胶与固体剂按(10:1,质量比)均匀混合,并进行抽真空处理;然后将抽除空气的混合胶在上述制备的阵列结构上浇注1mm的厚度,并再次进行抽真空处理;接着采用70度的温度将PDMS溶胶与结构玻璃混合体加热不少于4小时,将PDMS溶胶完全固化;最后采用脱膜工艺将PDMS胶膜和凹坑阵列结构玻璃模板分离,制备出表面微纳凸包阵列结构高宽比约为0.4的PDMS胶膜。将所制备得到的表面微纳凸包阵列结构高宽比约为0.3的PDMS胶膜放到放大500倍的电镜下观察,观察情况如图5所示。
图3给出了表面微纳凸包阵列结构在太阳能电池中应用的实施例。其具体实施步骤为:首先以10μm的太阳能级平板玻璃3为衬底,在其上沉积0.3μm TCO,作为前电极4;其次在TCO上沉积0.3μm a-Si,作为电池的p-i-n结构层5;然后在a-Si上沉积0.1μm AZO作为背电极及过渡层6;接着在AZO上沉积0.3μm Ag作为背面反射层7,完成硅薄膜太阳能电池的制备;最后将上述实施例制备的表面微纳凸包阵列结构高宽比约为0.4的PDMS胶膜1“覆盖”在硅薄膜太阳能电池的上表面,并在中间填充由乙醇C2H5OH、液状石蜡和溴代奈C10H7Br按1:1:1的比例配置而成的折射率匹配液2来消除空气层的影响,最终完成表面微纳凸包阵列结构太阳能电池的制备。图4所示为平板PDMS太阳能电池与表面微纳凸包阵列结构PDMS太阳能电池的外量子效率对比曲线图,从图中可知,表面微纳凸包阵列结构PDMS太阳能电池的外量子曲线相对于平板PDMS太阳能电池有明显的提升,这表明微纳凸包阵列结构具有减少光反射,增加光吸收,延长光程,加强表面光能俘获能力,提升太阳能电池的光电转化效率的优点。
以上对本发明的具体实施做了详细描述,但必须再次重申的是,本发明的核心内容是将PDMS溶胶浇注在凹坑阵列结构玻璃上,通过图形复制转移的方法来制备整齐排列且单层有序的微纳凸包阵列结构,本发明并不局限于上述特定实施方式,本领域的技术人员可以在权利要求的范围内做出各种变形和改进,这不影响本发明设计的实质内容。
Claims (3)
1.一种提升太阳电池表面光能俘获的微纳结构及制备方法。其特征是:首先将太阳能级玻璃衬底a经过微加工工艺制备成凹坑阵列结构玻璃b,接着在凹坑阵列结构上浇注PDMS溶胶形成PDMS溶胶与结构玻璃混合体c,最后将固化后的PDMS胶膜进行拔模,制备出带有表面微纳凸包阵列结构的PDMS胶膜d。所述结构的制备方法中,太阳能级玻璃衬底a需要经过RCA(标准清洗法)步骤进行彻底的清洗,然后通过光刻、显影、离子束刻蚀等微加工工艺,结合HF刻蚀与干法刻蚀的方法,在太阳能级玻璃衬底的表面上形成凹坑阵列结构,制备出凹坑阵列结构玻璃b,接着将调配好的PDMS溶胶浇注在凹坑阵列结构玻璃结构面并进行真空处理,采取70度的温度对PDMS胶进行不小于4小时的加热固化,最后将固化好的胶膜进行拔膜,制备出带有表面微纳凸包阵列结构的PDMS胶膜d。
2.根据权利要求1所述的,带有表面微纳凸包阵列结构的PDMS胶膜中的微纳凸包阵列结构及制备方法,其特征是:以制备好的凹坑阵列结构玻璃b为模板,然后在模板上浇注PDMS胶,将结构玻璃上面的凹坑阵列结构“复制”转移到PDMS胶膜上,在其表面形成微纳凸包阵列结构;所述微纳凸包阵列结构为周期排列的几何图形,其高宽比在0.1-0.8,周期与尺寸均为微纳米级别;所述周期排列的几何图形为半球凸包结构、椭球形凸包结构等。
3.根据权利要求1所述的带有表面微纳凸包阵列结构的PDMS胶膜中的PDMS胶膜,其特征是:所采用的材料为PDMS(Polydimethylsiloxane,聚二甲基硅氧烷),是一种高分子有机硅化合物分子;所述PDMS在使用时要将PDMS主体胶与固体胶按(10:1,质量比)均匀混合,并进行抽真空处理,以排除混合液中的空气;所述PDMS混合液在浇注到结构玻璃上时,要再次进行抽真空处理,并采用70度的温度加热固化不下于4小时后进行脱模,制备出带有表面微纳凸包阵列结构的PDMS胶膜。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110468217.5A CN113199683A (zh) | 2021-04-28 | 2021-04-28 | 一种提升太阳电池表面光能俘获的微纳结构及制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110468217.5A CN113199683A (zh) | 2021-04-28 | 2021-04-28 | 一种提升太阳电池表面光能俘获的微纳结构及制备方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN113199683A true CN113199683A (zh) | 2021-08-03 |
Family
ID=77029240
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202110468217.5A Pending CN113199683A (zh) | 2021-04-28 | 2021-04-28 | 一种提升太阳电池表面光能俘获的微纳结构及制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN113199683A (zh) |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009053714A1 (en) * | 2007-10-26 | 2009-04-30 | Bae Systems Plc | Adhesive microstructures |
CN101481079A (zh) * | 2009-02-11 | 2009-07-15 | 江苏大学 | 一种微纳米透镜阵列的制备方法 |
CN102967890A (zh) * | 2012-11-20 | 2013-03-13 | 中国科学院大连化学物理研究所 | 一种简易的pdms聚合物微透镜阵列的制备方法及应用 |
CN105731364A (zh) * | 2016-02-29 | 2016-07-06 | 天津大学 | 基于表面氧化控制转移印刷的pdms弹性体微纳加工方法 |
CN105758562A (zh) * | 2016-03-29 | 2016-07-13 | 电子科技大学 | 一种柔性压力传感器及其制备方法 |
CN112054124A (zh) * | 2020-09-18 | 2020-12-08 | 福州大学 | 具有金字塔型微结构减反膜的倒置结构有机太阳能电池 |
CN112299363A (zh) * | 2020-09-29 | 2021-02-02 | 江苏大学 | 基于空气模法的光滑倾斜底面微结构阵列表面制备方法 |
-
2021
- 2021-04-28 CN CN202110468217.5A patent/CN113199683A/zh active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009053714A1 (en) * | 2007-10-26 | 2009-04-30 | Bae Systems Plc | Adhesive microstructures |
CN101481079A (zh) * | 2009-02-11 | 2009-07-15 | 江苏大学 | 一种微纳米透镜阵列的制备方法 |
CN102967890A (zh) * | 2012-11-20 | 2013-03-13 | 中国科学院大连化学物理研究所 | 一种简易的pdms聚合物微透镜阵列的制备方法及应用 |
CN105731364A (zh) * | 2016-02-29 | 2016-07-06 | 天津大学 | 基于表面氧化控制转移印刷的pdms弹性体微纳加工方法 |
CN105758562A (zh) * | 2016-03-29 | 2016-07-13 | 电子科技大学 | 一种柔性压力传感器及其制备方法 |
CN112054124A (zh) * | 2020-09-18 | 2020-12-08 | 福州大学 | 具有金字塔型微结构减反膜的倒置结构有机太阳能电池 |
CN112299363A (zh) * | 2020-09-29 | 2021-02-02 | 江苏大学 | 基于空气模法的光滑倾斜底面微结构阵列表面制备方法 |
Non-Patent Citations (3)
Title |
---|
潘红娜等: "《晶体硅太阳能电池制备技术》", 30 October 2017, 北京邮电大学出版社 * |
王细洋等: "《现代制造技术》", 30 June 2017, 国防工业出版社 * |
田文超等: "《微机电技术》", 31 August 2014, 西安电子科技大学出版社 * |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Sanchez-Sobrado et al. | Colloidal-lithographed TiO 2 photonic nanostructures for solar cell light trapping | |
CN101958347B (zh) | 纳米结构功能涂层和器件 | |
Bessonov et al. | Nanoimprint patterning for tunable light trapping in large-area silicon solar cells | |
CN103022267B (zh) | 一种ZnO球形空壳结构纳米颗粒阵列的制备方法 | |
US20080276990A1 (en) | Substrate surface structures and processes for forming the same | |
CN101877362B (zh) | 具有周期结构的硅基板 | |
CN101858995A (zh) | 纳米结构减反射涂膜和相关方法及器件 | |
CN102812557A (zh) | 抗反射涂层及其制造方法 | |
CN102074591A (zh) | 用于太阳电池吸收增强的复合微纳光子结构及其制法 | |
US20110186119A1 (en) | Light-trapping plasmonic back reflector design for solar cells | |
CN105399340A (zh) | 一种超疏水高透射SiO2减反射薄膜及其制备方法 | |
CN107591483A (zh) | 一种混合陷光结构的钙钛矿太阳能电池及其制备方法 | |
US20140124030A1 (en) | Thin film solar cell and method for manufacturing same | |
US7517552B2 (en) | Glass beads coating process | |
Fang et al. | Biomimetic diodon-skin nanothorn polymer antireflection film for solar cell applications | |
CN107032359B (zh) | 一种二氧化硅溶胶的制备方法、光伏玻璃的制备方法 | |
CN104124286B (zh) | 一种利用自生长贵金属等离基元纳米结构 | |
CN109786480B (zh) | 一种纳米阵列结构太阳能电池及其制备方法 | |
Adamovic et al. | Potential der Plasmonik in photovoltaischen Solarzellen | |
CN101459201A (zh) | 太阳能电池及其制作方法 | |
CN113199683A (zh) | 一种提升太阳电池表面光能俘获的微纳结构及制备方法 | |
CN106206759B (zh) | 一种太阳电池高透过率减反射膜的制备方法 | |
JPWO2011117928A1 (ja) | 太陽電池 | |
US20150107660A1 (en) | Super-Transparent Electrodes for Photovoltaic Applications | |
CN114520266B (zh) | 一种硫化铅光电导探测器及其制备方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20210803 |
|
WD01 | Invention patent application deemed withdrawn after publication |