CN112786468A - 预成型扩散焊接 - Google Patents

预成型扩散焊接 Download PDF

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Publication number
CN112786468A
CN112786468A CN202011229130.4A CN202011229130A CN112786468A CN 112786468 A CN112786468 A CN 112786468A CN 202011229130 A CN202011229130 A CN 202011229130A CN 112786468 A CN112786468 A CN 112786468A
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CN
China
Prior art keywords
semiconductor die
metal region
substrate
solder preform
metal
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Pending
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CN202011229130.4A
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English (en)
Inventor
A·海因里希
K·勒斯尔
K·特鲁诺夫
A·昂劳
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Infineon Technologies Austria AG
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Infineon Technologies Austria AG
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Publication of CN112786468A publication Critical patent/CN112786468A/zh
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/19—Soldering, e.g. brazing, or unsoldering taking account of the properties of the materials to be soldered
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
    • B23K20/023—Thermo-compression bonding
    • B23K20/026—Thermo-compression bonding with diffusion of soldering material
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    • B23K20/16—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating with interposition of special material to facilitate connection of the parts, e.g. material for absorbing or producing gas
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Abstract

一种将半导体管芯接合到衬底的方法包括：将焊料预成型件施加到半导体管芯的金属区域或衬底的金属区域，该焊料预成型件具有30μm的最大厚度以及比两个金属区域都低的熔点；经由扩散焊接工艺并且在不直接向管芯施加压力的情况下，在半导体管芯的金属区域与衬底的金属区域之间形成焊接接头；以及设置扩散焊接工艺的焊接温度，使得焊料预成型件熔化并且与半导体管芯的金属区域和衬底的金属区域完全反应，以在整个焊接接头中形成一个或多个金属间相，每个金属间相的熔点高于焊料预成型件的熔点和焊接温度。

Description

预成型扩散焊接
背景技术
热性能和电性能在半导体技术的发展中发挥了越来越大的作用。这些因素，与微型化和提高的性能接合，需要高性能管芯(芯片)附接工艺和材料。扩散焊接就是一种这样的管芯附接工艺。
扩散焊接涉及向半导体晶片的背侧上溅射焊料材料的薄层。焊料材料的沉积代表了总体晶片成本的很大部分。另外，在管芯附接工艺期间使用较大的力以实现形状配合的互连，因为溅射的焊料层较薄并且器件附接到的引线框架具有定义好的曲率。
上述扩散焊接工艺还需要专门的设备，包括用于向器件施加较大的力以实现形状配合的互连的键合力单元。此外，单个地向每个管芯施加机械压力，并且必须要维持该机械压力，直到焊料的大部分等温固化，这限制了管芯附接工艺的处理量。另外，焊接温度必须要高，以能够在短时间内完全反应并且等温固化。
因此，需要一种改进的扩散焊接工艺。
发明内容
根据一种将半导体管芯接合到衬底的方法的实施例，该方法包括：将焊料预成型件施加到半导体管芯的金属区域或衬底的金属区域，该焊料预成型件具有30μm的最大厚度(例如，15μm的最大厚度，例如10μm、甚至7μm的最大厚度)以及比半导体管芯的金属区域和衬底的金属区域都低的熔点；经由扩散焊接工艺并且在不直接向半导体管芯施加压力的情况下，在半导体管芯的金属区域与衬底的金属区域之间形成焊接接头；以及设置扩散焊接工艺的焊接温度，使得焊料预成型件熔化并且与半导体管芯的金属区域和衬底的金属区域完全反应，以在整个焊接接头中形成一个或多个金属间相，一个或多个金属间相中的每个的熔点高于焊料预成型件的熔点和焊接温度。
半导体管芯的金属区域和衬底的金属区域可以包括相同的金属或金属合金，并且可以通过扩散焊接工艺在整个焊接接头中形成单一金属间相。
单独地或组合地，焊料预成型件可以包括Sn、Zn、In、Ga、Bi、Cd或其任何合金。
单独地或组合地，焊料预成型件可以包括Sn/Ag/Cu、Sn/Ag、Sn/Ag/Sb、Sn/Sb、Sn/Cu或Au80/Sn20。
单独地或组合地，衬底可以是引线框架或金属夹具，并且衬底的金属区域可以是引线框架或金属夹具的管芯附接区域。
单独地或组合地，衬底可以包括陶瓷，并且衬底的金属区域可以是附接到陶瓷的金属层。金属层可以包括和/或镀覆有Cu、Ni、Ag、Au、Pd、Pt、NiV、NiP、NiNiP、NiP/Pd、Ni/Au、NiP/Pd/Au或NiP/Pd/AuAg。
单独地或组合地，半导体管芯的金属区域可以是施加到半导体管芯的后侧或前侧的金属层。金属层可以包括和/或镀覆有Cu、Ni、Ag、Au、Pd、Pt、NiV、NiP、NiNiP、NiP/Pd、Ni/Au、NiP/Pd/Au、NiP/Pd/AuAg、NiV/Ag、NiV/Au或NiSi/Ag。
单独地或组合地，将焊料预成型件施加到半导体管芯的金属区域或衬底的金属区域可以包括：向衬底施加第一液体；在衬底上放置焊料预成型件，其中，第一液体通过表面张力维持焊料预成型件相对于衬底的位置；向焊料预成型件施加第二液体；以及在焊料预成型件上放置半导体管芯，其中，第二液体通过表面张力维持半导体管芯相对于焊料预成型件的位置。
单独地或组合地，该扩散焊接工艺可以包括：在真空炉中放置布置在焊料预成型件和衬底上的半导体管芯；向真空炉中引入甲酸；以及将真空炉的温度提升到焊接温度一段持续时间，在该一段持续时间内，焊料预成型件熔化并且与半导体管芯的金属区域和衬底的金属区域完全反应以在不直接向半导体管芯施加压力的情况下，在整个焊接接头中形成一个或多个金属间相。
单独地或组合地，可以在扩散焊接工艺期间，并行地向相应衬底附接多个半导体管芯。
单独地或组合地，在扩散焊接工艺之前，焊料预成型件可以具有比半导体管芯的金属区域更小的宽度和/或更小的长度，并且在扩散焊接工艺期间，焊料预成型件可以熔化并且散布在半导体管芯的整个金属区域之上，使得所得的焊接接头比焊料预成型件的初始最大厚度更薄。
单独地或组合地，该方法还可以包括：作为扩散焊接工艺的部分，向包含半导体管芯、焊料预成型件和衬底的真空炉中引入甲酸，以提高半导体管芯的金属区域和衬底的金属区域的可润湿性。
单独地或组合地，将焊料预成型件施加到半导体管芯的金属区域或衬底的金属区域可以包括：将焊料预成型件施加到包括半导体管芯和多个附加半导体管芯的半导体晶片的前侧或后侧；以及在将焊料预成型件施加到半导体晶片的前侧或后侧之后，对半导体管芯和多个附加半导体管芯进行单片化。
单独地或组合地，将焊料预成型件施加到半导体管芯的金属区域或衬底的金属区域可以包括：对半导体管芯进行加热；向半导体管芯的前侧或后侧施加焊料预成型件；以及用半导体管芯冲压焊料预成型件。
根据半导体器件的实施例，该半导体器件包括：具有金属区域的半导体管芯；具有金属区域的衬底；以及半导体管芯的金属区域与衬底的金属区域之间的焊接接头。整个焊接接头中存在一个或多个金属间相，一个或多个金属间相中的每个是由扩散到半导体管芯的金属区域和衬底的金属区域中的焊料预成型件形成的。焊接接头具有与半导体管芯相同的长宽比。该半导体管芯的金属区域和衬底的金属区域可以包括相同的金属或金属合金，并且在整个焊接接头中可以存在单一金属间相。
本领域的技术人员在阅读以下具体实施方式并且查看附图时将认识到附加的特征和优点。
附图说明
附图的要素未必彼此相对成比例。类似附图标记指示对应的类似部分。除非彼此互斥，可以将各示出的实施例中的特征组合。实施例在附图中被绘示并且在接下来的具体实施方式中被详述。
图1示出了使用薄焊料预成型件将半导体管芯接合到衬底的方法实施例的框图。
图2A到图2D示出了图1中所示方法的框110到框130的实施例的相应截面图。
图3示出了图1中所示方法的框130的另一实施例的截面图。
图4A和图4B示出了图1中所示方法的框110到框130的另一实施例的相应截面图。
具体实施方式
本文描述的实施例提供了一种接合技术，所述接合技术涉及将薄焊料预成型件施加到半导体管芯的金属区域或衬底的金属区域，以及经由扩散焊接工艺并且在不直接向半导体管芯施加(机械)压力的情况下，在半导体管芯的金属区域与衬底的金属区域之间形成焊接接头。焊料预成型件足够薄，例如，最多30μm厚，从而可以设置扩散焊接工艺的焊接温度，使得焊料预成型件熔化并且与半导体管芯的金属区域和衬底的金属区域完全反应，以在整个焊接接头中形成一个或多个金属间相。由于在扩散焊接工艺期间不直接向半导体管芯施加(机械)压力，所以可以经由批量处理同时处理多个半导体管芯。
图1示出了用于半导体管芯的接合技术的实施例。根据本实施例，可以执行标准前端(FE)处理(框100)，例如用于源极、栅极和漏极接触部的蚀刻、研磨、抛光、结构化和/或金属沉积，并且切割薄焊料预成型件并且将薄焊料预成型件放置在半导体管芯的金属区域或衬底的金属区域上(框110)。作为接合技术的一部分，薄焊料预成型件可以从一卷预成型焊料材料冲压或切割出，或者薄焊料预成型件可以是预切割预成型件、预冲压预成型件等。
可以在管芯组装期间施加薄焊料预成型件，或者可以将薄焊料预成型件预先施加到衬底或半导体晶片。在一个实施例中，将薄焊料预成型件施加到包括半导体管芯和多个附加半导体管芯的半导体晶片的前侧或后侧。在向半导体晶片施加薄焊料预成型件之后，例如，通过锯切、激光切割、蚀刻等对半导体管芯进行单片化。也可以在管芯单片化工艺之后施加薄焊料预成型件。例如，可以对半导体管芯进行加热并且可以向加热的半导体管芯的前侧或后侧施加薄焊料预成型件。可以用半导体管芯冲压薄焊料预成型件。在预先向衬底施加薄焊料预成型件的情况下，可以通过辊包覆、预熔化、印刷和重铸等来施加薄焊料预成型件。通常，可以在没有助焊剂的情况下来实行该接合技术，因为可以在具有甲酸的真空环境中进行管芯附接工艺。这对于印刷的薄焊料预成型件也是有效的，其中，焊膏可以没有助焊剂，因为可以在接合技术期间利用甲酸清洁表面。
对于同时焊接超过一个半导体管芯的批量处理而言，在相同或不同管芯/衬底上放置多个预成型件。通过这种方式，可以将所有要同时焊接的半导体管芯接合到同一衬底，接合到单个衬底，或在相应组中接合到单独衬底。
对于串行或批量处理而言，可以通过冲压、激光切割、蚀刻等来切割薄焊料预成型件。在批量处理的情况下，根据要接合的半导体管芯和衬底的类型，同时处理的薄焊料预成型件可以具有相同或不同的厚度。
对于经由扩散焊接使用薄焊料预成型件附接到衬底的那些半导体管芯而言，每个薄焊料预成型件是由薄且极均匀的焊料形成的，例如，是由薄的金属膜或箔形成的，并且每个薄焊料预成型件具有30μm(微米)的最大厚度，例如，15μm的最大厚度，例如，10μm的最大厚度，甚至薄到7μm。在批量处理的情况下，可以使用最大厚度大于30μm的更厚的焊料预成型件或使用焊膏将一些半导体管芯附接到衬底。
一般地，本文使用的术语“薄焊料预成型件”意味着最大厚度为30μm并且熔点低于要通过薄焊料预成型件接合的半导体管芯的金属区域和衬底的金属区域两者的焊料预成型件。这样的薄焊料预成型件在扩散焊接工艺期间与管芯后侧金属和衬底材料完全反应，并且在半导体管芯与衬底之间形成的所得焊接接头(键合线)在整个焊接接头内具有高熔点相。在高于30μm的厚度并且对于软焊膏而言，在合理时间量之内不能在整个焊接接头中产生高熔点相，并且因此所得焊接接头的中间部分将不会被转换成金属间化合物，而是将保持在原始熔化温度。本文使用的术语“高熔点相”意味着熔点高于焊料预成型件的熔点并且高于扩散焊接工艺的焊接温度的金属间相。
图1中所示的接合技术还包括拾取并且将要处理的每个半导体管芯放置在对应的衬底上(框120)。如上所述，在批量处理的情况下，可以将所有要同时焊接的半导体管芯放置在同一衬底上，放置在单个衬底上，或在放置在单独的衬底的相应组上。
图1中所示的接合技术还包括在同时焊接的每个半导体管芯的金属区域与对应衬底的金属区域之间形成焊接接头(框130)。对于要通过薄焊料预成型件接合到衬底的每个半导体管芯而言，通过扩散焊接形成对应的焊接接头，而无需直接向半导体管芯施加(机械)压力。通过使用最多30μm厚的薄焊料预成型件，可以设置扩散焊接工艺的焊接温度，使得焊料预成型件熔化并且与半导体管芯的金属区域和衬底的金属区域完全反应，以在整个焊接接头中形成一个或多个金属间相。每个金属间相的熔点高于焊料预成型件的熔点和焊接温度。
作为扩散焊接工艺的部分，通过不向半导体管芯施加直接压力，可以同时焊接多个管芯，而无需担心管芯、衬底和/或管芯附接材料的不同厚度。通过这种方式，可以使用薄焊料预成型件焊接一些半导体管芯，可以使用更厚的焊料预成型件焊接其他半导体管芯，并且可以使用焊膏焊接另外的其他半导体管芯。对于使用薄焊料预成型件焊接的每个半导体管芯，如果半导体管芯的金属区域和衬底的金属区域包括相同的金属或金属合金，则通过扩散焊接工艺在整个焊接接头中形成单一金属间相。
图1中所示的接合技术还可以包括标准前侧(FS)接触部形成处理(框140)和标准后端(BE)处理(框150)，标准前侧接触部形成处理可以包括形成用于源极和栅极接触部的导电结构和可焊接前侧金属化，标准后端处理可以包括沉积用于电连接漏极接触部的金属层堆叠层。可以使用与框110到框130代表的扩散焊接工艺相同或不同的设备、线和/或部位执行前侧接触部形成处理和标准后端处理。
图2A到图2D示出了图1中所示方法的框110到框130的实施例。尽管图2A到图2D示出了使用薄焊料预成型件204通过扩散焊接将单一半导体管芯200接合到单一衬底202，但如本文前面解释的，可以将超过一个半导体管芯同时焊接到同一衬底，接合到单个衬底，或在相应组中接合到单独衬底。
图2A示出了向衬底202施加第一液体206。在一个实施例中，第一液体206是挥发性的非反应性液体，其通过表面张力将薄焊料预成型件204保持在衬底202上的适当位置。可以使用半导体管芯通常接合到的任何类型的衬底。例如，在一个实施例中，衬底202是具有半导体管芯200要接合到的金属区域208的引线框架或金属夹具。例如，引线框架或金属夹具可以包括Cu、Ni和/或Ag。在另一个实施例中，衬底202包括陶瓷和附接到陶瓷的金属层，半导体管芯200要接合到该金属层。在一个实施例中，金属层包括和/或镀覆有Cu、Ni、Ag、Au、Pd、Pt、NiV、NiP、NiNiP、NiP/Pd、Ni/Au、NiP/Pd/Au或NiP/Pd/AuAg。还可以使用其他类型的金属/金属合金和衬底。
图2B示出了在用第一液体206放置在衬底202上期间的薄焊料预成型件204。第一液体206通过表面张力维持薄焊料预成型件204相对于衬底202的位置。
在一个实施例中，薄焊料预成型件204包括Sn、Zn、In、Ga、Bi、Cd或其任何合金。例如，薄焊料预成型件204可以包括Sn/Ag/Cu、Sn/Ag、Sn/Ag/Sb、Sn/Sb、Sn/Cu或Au80/Sn20。还可以使用其他类型的薄焊料预成型件。替代地，可以将薄焊料预成型件204施加到半导体管芯200而不是衬底202。在这种情况下，图2B中的衬底202转而将是半导体管芯200或生产管芯200所用的半导体晶片。例如，薄焊料预成型件204可以被施加到包括半导体管芯200和多个附加半导体管芯的半导体晶片的前侧或后侧，或者薄焊料预成型件204可以在管芯单片化工艺之后被施加到半导体管芯200的前侧或后侧，两者都如前所述。
图2C示出了向薄焊料预成型件204施加第二液体210。在一个实施例中，第二液体210是挥发性的非反应性液体，其通过表面张力将半导体管芯200保持在薄焊料预成型件204上的适当位置。第一液体206和第二液体210可以是相同或不同类型的液体。
图2D示出了在用第二液体210放置在薄焊料预成型件204上期间的半导体管芯200。第二液体210通过表面张力维持半导体管芯200相对于薄焊料预成型件204的位置。可以使用夹紧机构(未示出)处理薄焊料预成型件204，以将组件运输到扩散焊接炉。
然后经由扩散焊接工艺并且在不直接向半导体管芯200施加(机械)压力的情况下，在半导体管芯200的面向衬底202的金属区域212与衬底202的金属区域208之间形成焊接接头。半导体管芯200的金属区域212可以是施加到半导体管芯200的后侧或前侧的金属层。在一个实施例中，半导体管芯200的金属区域212包括和/或镀覆有Cu、Ni、Ag、Au、Pd、Pt、NiV、NiP、NiNiP、NiP/Pd、Ni/Au、NiP/Pd/Au、NiP/Pd/AuAg、NiV/Ag、NiV/Au或NiSi/Ag。金属区域212可以是半导体管芯200的端子，例如，在功率晶体管管芯的情况下是负载或控制端子，在逻辑管芯(例如，栅极驱动器、微控制器、存储器等)的情况下是控制或I/O(输入/输出)端子，金属区域212可以是无源管芯(例如，电感器或电容器管芯等)的端子。
要通过扩散焊接工艺和薄焊料预成型件204接合在一起的半导体管芯200的金属区域212和衬底202的金属区域208可以包括相同或不同的金属/金属合金。如果半导体管芯200的金属区域212和衬底202的金属区域208包括相同的金属或金属合金，则如前文所述，在管芯200与衬底202之间形成的整个焊接接头中形成单一金属间相。例如，如果要接合的半导体管芯200的金属区域212和衬底202的金属区域208都包括Cu或相同的富Cu合金，则在扩散焊接工艺期间，Cu将经由液化的预成型材料溶解，直到达到特定浓度，在该浓度点处接头固化。所得的基于Cu的金属间相在扩散焊接工艺的焊接温度下将不会再次熔化。相同的情况适用于其他类型的常见管芯和衬底金属化，例如富Ni和富Ag合金。
如果半导体管芯200的金属区域212和衬底202的金属区域208包括不同的金属/金属合金，则在整个焊接接头中形成多个金属间相。在任一种情况下，薄焊料预成型件204在扩散焊接工艺期间与金属区域212和金属区域208完全反应，使得在管芯200与衬底202之间形成的焊接接头在整个焊接接头内具有高熔点相。
图3示出了由图1中的框110到框130表示的扩散焊接工艺的实施例。图3示出了使用薄焊料预成型件204通过扩散焊接将多个半导体管芯200接合到单个衬底202。如前所述，可以采用批量或串行处理，并且可以将超过一个半导体管芯同时焊接到同一衬底，接合到单个衬底，或在相应组中接合到单独衬底。
图3中所示的扩散焊接工艺包括在真空炉300中放置布置在薄焊料预成型件204和对应的衬底202上的至少一个半导体管芯200。然后向真空炉300中引入甲酸302。甲酸302从衬底202、金属区域212和薄焊料预成型件204去除氧化，由此提高金属区域212和金属区域208的可润湿性并且完全填充管芯200与衬底202之间的空间。例如，在真空条件下通过对元件304进行加热以将真空炉的温度提升到焊接温度一段持续时间，在该一段持续时间内，每个薄焊料预成型件204熔化并且与金属区域212和金属区域208完全反应，以在整个焊接接头中形成一个或多个金属间相。无需直接向半导体管芯200施加(机械)压力就执行了扩散焊接工艺。利用这种方式，可以使用标准扩散焊接设备而无需重新设计。
通过使用薄焊料预成型件204从图3中所示的扩散焊接工艺生产的每个半导体器件具有：至少一个具有金属区域212的半导体管芯200、至少一个具有金属区域208的衬底202以及在金属区域212与金属区域208之间的焊接接头。在整个焊接接头中存在一个或多个金属间相，每个金属间相都由扩散到金属区域212和金属区域208中的薄焊料预成型件204形成。
在扩散焊接工艺期间不会从管芯200下方挤出焊料材料，因为未直接向半导体管芯200施加(机械)压力。如果像扩散焊接期间通常所做那样向半导体管芯200施加压力，由于挤压的缘故，液体焊料材料的气泡会从半导体管芯200下方挤出，从而沿着管芯200的周边产生贝壳状结构。利用本文描述的扩散焊接工艺，沿着半导体管芯200的边缘可能有一些毛细效应，但毛细效应将在管芯200整个周边周围被均匀限定并且相同。这意味着，焊接接头不超过半导体管芯200的横向(长度和宽度)尺度，并且具有与半导体管芯200相同的长宽比。而且，如本文先前所述，金属区域212和金属区域208可以包括相同金属或金属合金，从而在整个焊接接头中存在单一金属间相。
图4A和图4B示出了图1中所示方法的框110到框130的另一实施例。根据该实施例，在扩散焊接工艺之前，薄焊料预成型件204具有比半导体管芯200的金属区域212更小的宽度和/或更小的长度(W/L)，如图4A所示。在扩散焊接工艺期间，薄焊料预成型件204熔化并且散布在半导体管芯200的整个金属区域212之上，使得所得的焊接接头400的厚度(T2)小于薄焊料预成型件204的初始最大厚度(T1)，如图4B所示。通过这种方式，可以实现比可获得的最薄的薄焊料预成型件204更薄的焊接接头400。
独立于金属区域212提供薄焊料预成型件204作为管芯附接材料产生了几个优点。可以选择比半导体管芯200的横向尺度更小的薄焊料预成型件204(例如，如图4A和图4B所示)，以实现窄设计规则/低间隙。此外，使用甲酸302作为扩散焊接工艺的一部分提供了衬底202上的薄焊料预成型件204的优异润湿，从而完全填充了半导体管芯200与衬底202之间的空间。还是用这种方法，可以容易地更换焊料预成型件/材料的类型而无需对接合/扩散焊接工艺进行修改。
诸如“第一”、“第二”等术语用于描述各种元件、区域、区段等。也并非旨在限制。通篇说明书中类似术语指示类似的元件。
如本文所用，术语“具有”、“包含”、“包括”等是开放式术语，表示存在所述元件或特征，但不排除附加的元件或特征。冠词“一”和“所述”旨在包括复数和单数，除非上下文另外明确指出。
要理解的是，本文描述的各实施例的特征可以彼此组合，除非另外特别指出。
尽管本文已经示出和描述了具体实施例，但本领域的普通技术人员将认识到，在不脱离本发明的范围的情况下，多种替代和/或等价实施方式可以替代所示和所述的具体实施例。本申请旨在覆盖本文所述具体实施例的任何修改或变化。因此，旨在使本发明仅受到权利要求及其等价物的限制。

Claims (20)

1.一种将半导体管芯接合到衬底的方法，所述方法包括：
将焊料预成型件施加到所述半导体管芯的金属区域或所述衬底的金属区域，所述焊料预成型件具有30μm的最大厚度以及比所述半导体管芯的所述金属区域和所述衬底的所述金属区域更低的熔点；
经由扩散焊接工艺并且在不直接向所述半导体管芯施加压力的情况下，在所述半导体管芯的所述金属区域与所述衬底的所述金属区域之间形成焊接接头；以及
设置所述扩散焊接工艺的焊接温度，使得所述焊料预成型件熔化并且与所述半导体管芯的所述金属区域和所述衬底的所述金属区域完全反应，以在整个所述焊接接头中形成一个或多个金属间相，所述一个或多个金属间相中的每个的熔点高于所述焊料预成型件的熔点和所述焊接温度。
2.根据权利要求1所述的方法，其中，所述焊料预成型件具有15μm的最大厚度。
3.根据权利要求1所述的方法，其中，所述焊料预成型件具有7μm的最大厚度。
4.根据权利要求1所述的方法，其中，所述半导体管芯的所述金属区域和所述衬底的所述金属区域包括相同的金属或金属合金，并且其中，通过所述扩散焊接工艺在整个所述焊接接头中形成单一金属间相。
5.根据权利要求1所述的方法，其中，所述焊料预成型件包括Sn、Zn、In、Ga、Bi、Cd或其任何合金。
6.根据权利要求1所述的方法，其中，所述焊料预成型件包括Sn/Ag/Cu、Sn/Ag、Sn/Ag/Sb、Sn/Sb、Sn/Cu或Au80/Sn20。
7.根据权利要求1所述的方法，其中，所述衬底是引线框架或金属夹具，并且其中，所述衬底的所述金属区域是所述引线框架或所述金属夹具的管芯附接区域。
8.根据权利要求1所述的方法，其中，所述衬底包括陶瓷，并且其中，所述衬底的所述金属区域是附接到所述陶瓷的金属层。
9.根据权利要求8所述的方法，其中，所述金属层包括和/或镀覆有Cu、Ni、Ag、Au、Pd、Pt、NiV、NiP、NiNiP、NiP/Pd、Ni/Au、NiP/Pd/Au或NiP/Pd/AuAg。
10.根据权利要求1所述的方法，其中，所述半导体管芯的所述金属区域是施加到所述半导体管芯的后侧或前侧的金属层。
11.根据权利要求10所述的方法，其中，所述金属层包括和/或镀覆有Cu、Ni、Ag、Au、Pd、Pt、NiV、NiP、NiNiP、NiP/Pd、Ni/Au、NiP/Pd/Au、NiP/Pd/AuAg、NiV/Ag、NiV/Au或NiSi/Ag。
12.根据权利要求1所述的方法，其中，将所述焊料预成型件施加到所述半导体管芯的所述金属区域或所述衬底的所述金属区域包括：
向所述衬底施加第一液体；
在所述衬底上放置所述焊料预成型件，其中，所述第一液体通过表面张力维持所述焊料预成型件相对于所述衬底的位置；
向所述焊料预成型件施加第二液体；以及
在所述焊料预成型件上放置所述半导体管芯，其中，所述第二液体通过表面张力维持所述半导体管芯相对于所述焊料预成型件的位置。
13.根据权利要求12所述的方法，其中，所述扩散焊接工艺包括：
在真空炉中放置布置在所述焊料预成型件和所述衬底上的所述半导体管芯；
向所述真空炉中引入甲酸；以及
将所述真空炉的温度提升到所述焊接温度一段持续时间，在所述一段持续时间内，所述焊料预成型件熔化并且与所述半导体管芯的所述金属区域和所述衬底的所述金属区域完全反应以在不直接向所述半导体管芯施加压力的情况下，在整个所述焊接接头中形成所述一个或多个金属间相。
14.根据权利要求1所述的方法，其中，在所述扩散焊接工艺期间，并行地向相应衬底附接多个半导体管芯。
15.根据权利要求1所述的方法，其中，在所述扩散焊接工艺之前，所述焊料预成型件具有比所述半导体管芯的所述金属区域更小的宽度和/或更小的长度，并且其中，在所述扩散焊接工艺期间，所述焊料预成型件熔化并且散布在所述半导体管芯的整个所述金属区域之上，使得所得的焊接接头比所述焊料预成型件的初始最大厚度更薄。
16.根据权利要求15所述的方法，还包括：
作为所述扩散焊接工艺的部分，向包含所述半导体管芯、所述焊料预成型件和所述衬底的真空炉中引入甲酸，以提高所述半导体管芯的所述金属区域和所述衬底的所述金属区域的可润湿性。
17.根据权利要求1所述的方法，其中，将所述焊料预成型件施加到所述半导体管芯的所述金属区域或所述衬底的所述金属区域包括：
将所述焊料预成型件施加到包括所述半导体管芯和多个附加半导体管芯的半导体晶片的前侧或后侧；以及
在将所述焊料预成型件施加到所述半导体晶片的所述前侧或所述后侧之后，对所述半导体管芯和所述多个附加半导体管芯进行单片化。
18.根据权利要求1所述的方法，其中，将所述焊料预成型件施加到所述半导体管芯的所述金属区域或所述衬底的所述金属区域包括：
对所述半导体管芯进行加热；
向所述半导体管芯的前侧或后侧施加所述焊料预成型件；以及
用所述半导体管芯冲压所述焊料预成型件。
19.一种半导体器件，包括：
具有金属区域的半导体管芯；
具有金属区域的衬底；以及
所述半导体管芯的所述金属区域与所述衬底的所述金属区域之间的焊接接头，
其中，整个所述焊接接头中存在一个或多个金属间相，所述一个或多个金属间相中的每个是由扩散到所述半导体管芯的所述金属区域和所述衬底的所述金属区域中的焊料预成型件形成的，
其中，所述焊接接头具有与所述半导体管芯相同的长宽比。
20.根据权利要求19所述的半导体器件，其中，所述半导体管芯的所述金属区域和所述衬底的所述金属区域包括相同的金属或金属合金，并且其中，在整个所述焊接接头中存在单一金属间相。
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