CN112511125A - 声表面波器件的制造方法 - Google Patents
声表面波器件的制造方法 Download PDFInfo
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- CN112511125A CN112511125A CN202011006739.5A CN202011006739A CN112511125A CN 112511125 A CN112511125 A CN 112511125A CN 202011006739 A CN202011006739 A CN 202011006739A CN 112511125 A CN112511125 A CN 112511125A
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- 238000000034 method Methods 0.000 title claims abstract description 137
- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 61
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 55
- 238000000151 deposition Methods 0.000 claims abstract description 151
- 230000008569 process Effects 0.000 claims abstract description 113
- 238000004544 sputter deposition Methods 0.000 claims abstract description 95
- 239000010409 thin film Substances 0.000 claims abstract description 74
- 238000001816 cooling Methods 0.000 claims abstract description 54
- 230000009467 reduction Effects 0.000 claims abstract description 33
- 239000010410 layer Substances 0.000 claims description 280
- 230000008021 deposition Effects 0.000 claims description 141
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 96
- 239000010408 film Substances 0.000 claims description 68
- 239000000758 substrate Substances 0.000 claims description 52
- 239000000377 silicon dioxide Substances 0.000 claims description 50
- 239000000463 material Substances 0.000 claims description 29
- 238000005468 ion implantation Methods 0.000 claims description 18
- 238000005566 electron beam evaporation Methods 0.000 claims description 12
- 238000005498 polishing Methods 0.000 claims description 10
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 9
- 230000007704 transition Effects 0.000 claims description 9
- 229910052681 coesite Inorganic materials 0.000 claims description 8
- 229910052906 cristobalite Inorganic materials 0.000 claims description 8
- 229910052682 stishovite Inorganic materials 0.000 claims description 8
- 229910052905 tridymite Inorganic materials 0.000 claims description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 239000012790 adhesive layer Substances 0.000 claims description 2
- 238000005137 deposition process Methods 0.000 description 60
- 235000012239 silicon dioxide Nutrition 0.000 description 38
- 229910052581 Si3N4 Inorganic materials 0.000 description 30
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 30
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 235000012431 wafers Nutrition 0.000 description 12
- 239000012634 fragment Substances 0.000 description 11
- 239000010936 titanium Substances 0.000 description 11
- 239000013078 crystal Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 8
- 238000005240 physical vapour deposition Methods 0.000 description 8
- 238000011946 reduction process Methods 0.000 description 8
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- 239000012535 impurity Substances 0.000 description 7
- 238000001179 sorption measurement Methods 0.000 description 7
- 229910052719 titanium Inorganic materials 0.000 description 7
- 238000000280 densification Methods 0.000 description 6
- 230000002035 prolonged effect Effects 0.000 description 6
- 230000003749 cleanliness Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 239000002033 PVDF binder Substances 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000004886 process control Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000035882 stress Effects 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910020781 SixOy Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000012805 post-processing Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- YSZKOFNTXPLTCU-UHFFFAOYSA-N barium lithium Chemical compound [Li].[Ba] YSZKOFNTXPLTCU-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical class [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- MNKMDLVKGZBOEW-UHFFFAOYSA-M lithium;3,4,5-trihydroxybenzoate Chemical compound [Li+].OC1=CC(C([O-])=O)=CC(O)=C1O MNKMDLVKGZBOEW-UHFFFAOYSA-M 0.000 description 1
- 230000009347 mechanical transmission Effects 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
- H03H3/10—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02834—Means for compensation or elimination of undesirable effects of temperature influence
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
Claims (28)
Priority Applications (1)
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CN202011006739.5A CN112511125B (zh) | 2020-09-23 | 2020-09-23 | 声表面波器件的制造方法 |
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CN202011006739.5A CN112511125B (zh) | 2020-09-23 | 2020-09-23 | 声表面波器件的制造方法 |
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CN112511125A true CN112511125A (zh) | 2021-03-16 |
CN112511125B CN112511125B (zh) | 2024-01-26 |
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Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006186833A (ja) * | 2004-12-28 | 2006-07-13 | Kyocera Kinseki Corp | 圧電薄膜デバイス及びその製造方法 |
US20060186759A1 (en) * | 2003-07-21 | 2006-08-24 | Kim Hyeong J | Silicon film bulk acoustic wave device and process of the same |
US20070035364A1 (en) * | 2005-08-11 | 2007-02-15 | Uppili Sridhar | Titanium-tungsten alloy based mirrors and electrodes in bulk acoustic wave devices |
CN101997512A (zh) * | 2010-10-28 | 2011-03-30 | 哈尔滨工业大学 | 固贴式薄膜体声波谐振器及其全绝缘布拉格反射栅制备方法 |
CN107812691A (zh) * | 2017-09-28 | 2018-03-20 | 瑞声科技(新加坡)有限公司 | 压电超声换能器及其制备方法 |
CN110224680A (zh) * | 2019-05-13 | 2019-09-10 | 电子科技大学 | 一种固态反射型体声波谐振器及其制备方法 |
CN110311015A (zh) * | 2019-07-09 | 2019-10-08 | 理想晶延半导体设备上海(有限)公司 | 晶硅太阳能电池的薄膜沉积方法 |
CN110724918A (zh) * | 2019-11-11 | 2020-01-24 | 温州职业技术学院 | 一种中空内环磁控溅射阴极 |
KR20200081972A (ko) * | 2018-12-28 | 2020-07-08 | (주) 와이팜 | 에너지 누화를 최소화하는 다층 구조의 saw 공진기 및 제조 방법 |
-
2020
- 2020-09-23 CN CN202011006739.5A patent/CN112511125B/zh active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060186759A1 (en) * | 2003-07-21 | 2006-08-24 | Kim Hyeong J | Silicon film bulk acoustic wave device and process of the same |
JP2006186833A (ja) * | 2004-12-28 | 2006-07-13 | Kyocera Kinseki Corp | 圧電薄膜デバイス及びその製造方法 |
US20070035364A1 (en) * | 2005-08-11 | 2007-02-15 | Uppili Sridhar | Titanium-tungsten alloy based mirrors and electrodes in bulk acoustic wave devices |
CN101997512A (zh) * | 2010-10-28 | 2011-03-30 | 哈尔滨工业大学 | 固贴式薄膜体声波谐振器及其全绝缘布拉格反射栅制备方法 |
CN107812691A (zh) * | 2017-09-28 | 2018-03-20 | 瑞声科技(新加坡)有限公司 | 压电超声换能器及其制备方法 |
KR20200081972A (ko) * | 2018-12-28 | 2020-07-08 | (주) 와이팜 | 에너지 누화를 최소화하는 다층 구조의 saw 공진기 및 제조 방법 |
CN110224680A (zh) * | 2019-05-13 | 2019-09-10 | 电子科技大学 | 一种固态反射型体声波谐振器及其制备方法 |
CN110311015A (zh) * | 2019-07-09 | 2019-10-08 | 理想晶延半导体设备上海(有限)公司 | 晶硅太阳能电池的薄膜沉积方法 |
CN110724918A (zh) * | 2019-11-11 | 2020-01-24 | 温州职业技术学院 | 一种中空内环磁控溅射阴极 |
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Effective date of registration: 20210707 Address after: 510700 Room 202, building D, No. 136, Kaiyuan Avenue, Huangpu District, Guangzhou City, Guangdong Province Applicant after: Guangdong Guangna Technology Development Co.,Ltd. Address before: 510700 room 1004, building D, 136 Kaiyuan Avenue, Huangpu District, Guangzhou City, Guangdong Province Applicant before: Guangdong guangnaixin Technology Co.,Ltd. |
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Effective date of registration: 20210813 Address after: 510535 Room 201, building D, 136 Kaiyuan Avenue, Huangpu District, Guangzhou City, Guangdong Province Applicant after: Guangdong Guangdong Guangdong Hong Kong Macao Dawan District National Nanotechnology Innovation Research Institute Address before: 510700 Room 202, building D, No. 136, Kaiyuan Avenue, Huangpu District, Guangzhou City, Guangdong Province Applicant before: Guangdong Guangna Technology Development Co.,Ltd. |
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