CN112499601A - Method for efficiently preparing thin-layer MXene - Google Patents

Method for efficiently preparing thin-layer MXene Download PDF

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CN112499601A
CN112499601A CN202011471250.5A CN202011471250A CN112499601A CN 112499601 A CN112499601 A CN 112499601A CN 202011471250 A CN202011471250 A CN 202011471250A CN 112499601 A CN112499601 A CN 112499601A
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mxene
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CN112499601B (en
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赖超
苏忠
曲捷
孙闯
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Jiangsu Normal University
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/0615—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with transition metals other than titanium, zirconium or hafnium
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
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    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/076—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with titanium or zirconium or hafnium
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    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
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    • C01B32/914—Carbides of single elements
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    • C01—INORGANIC CHEMISTRY
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/03—Particle morphology depicted by an image obtained by SEM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/20—Particle morphology extending in two dimensions, e.g. plate-like
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer

Abstract

The invention discloses a method for efficiently preparing a thin layer MXene, which relates to the technical field of MAX materials. The invention creatively uses the novel stripping material, realizes the high-efficiency stripping of the thin-layer MXene, improves the yield, greatly reduces the cost and further improves the stability of the MXene.

Description

Method for efficiently preparing thin-layer MXene
Technical Field
The invention relates to the technical field of MAX materials, in particular to a preparation method of MXene.
Background
MXene as one new kind of transition metal two-dimensional (2D) nanometer material with the chemical expression of Mn+1Xn(M is a transition metal element, X is carbon or nitrogen element, and n is 1, 2, 3). MXene materials have excellent conductivity and contain a large number of functional groups (-F, -OH) on the surfaceO), MXene also has good hydrophilicity. Because of these unique physicochemical properties, MXene has been widely used in the fields of catalysis, energy storage, sensors, water treatment, etc. since 2011.
The conventional preparation method of MXene at present comprises an acid etching method (hydrofluoric acid or corresponding villiaumite), an alkali etching method, a high-temperature molten salt method and the like. Etching the A layer elements (Al, Si and the like) in the raw material MAX by adopting a proper etchant, and then obtaining the two-dimensional thin layer MXene nanosheet layer by oscillation stripping. However, in the preparation process, simple oscillation is difficult to effectively and completely strip the nanosheets, and the stripped two-dimensional nanosheets are extremely easy to irreversibly stack and agglomerate under the action of van der waals force, so that the thin-layer MXene is extremely low in yield, expensive and incapable of being commercially applied.
Disclosure of Invention
Based on the problem of low yield of thin-layer MXene, the invention aims to provide a method for efficiently preparing a thin-layer MXene material so as to overcome the defects in the prior art.
Another object of the invention is to provide the use of thin layers of MXene two-dimensional material.
In order to achieve the purpose, the technical scheme of the invention is realized as follows:
a method for efficiently preparing thin-layer MXene comprises the following specific steps: dispersing the MAX bulk material with the etched A layer elements (Al, Si and the like) into a certain amount of stripping solution, oscillating and stripping, and freeze-drying to obtain the thin MXene two-dimensional material with high yield.
Furthermore, according to the method for efficiently preparing the thin layer MXene, the stripping solution is an aqueous solution comprising carbon nanotubes, chitosan and polyacrylamide.
Furthermore, the concentration of the stripping solution in the method for efficiently preparing the thin layer MXene is 0.01-100 mg/mL.
Furthermore, according to the method for efficiently preparing the thin layer MXene, the mass ratio of the added stripping material to the MAX material to be stripped is 1-100%. The optimal proportion is 2-20%.
Furthermore, the oscillation time of the method for efficiently preparing the thin layer MXene is 0.1-10 h.
Furthermore, the method for efficiently preparing the thin layer MXene has the advantages that the thickness of a thin layer is 1.5-100nm, and the size of the structure of the thin layer is 0.1-10 mu m.
In another aspect of the invention, the use of a thin layer of MXene two-dimensional material in the preparation of an energy storage material, a composite nanomaterial, a lubricating material, an adsorbent material or a catalyst is provided.
Compared with the prior art, the invention has the following advantages:
(1) the invention provides a method for efficiently preparing thin-layer MXene, which is based on the principle that the rheological property and the viscosity of a stripping material are utilized to efficiently strip massive MAX to obtain a thin-layer MXene two-dimensional nanosheet material.
(2) The method for efficiently preparing the thin-layer MXene creatively uses the novel stripping material, the stripping material has the advantages of wide source, easiness in obtaining and low cost, and the preparation cost of the thin-layer MXene two-dimensional nanosheet material can be greatly reduced.
(3) According to the method for efficiently preparing the thin-layer MXene, disclosed by the invention, the surface groups (amino groups, hydroxyl groups and the like) of the used stripping material can be coordinated with metal atoms on the surface of the MXene, so that the transition atoms are prevented from being oxidized, and the stability of the MXene is further improved.
(4) The method for efficiently preparing the thin-layer MXene has the advantages of mild reaction conditions, simplicity in operation, environmental friendliness, high yield and contribution to large-scale production, and improves the application prospect of the MXene.
(5) The novel stripping material is creatively used, and due to the rheological property and lubricity of the stripping material, the electrical property, dielectric property and the like of the prepared thin-layer MXene two-dimensional nanosheet material have adjustability and controllability, and the thin-layer MXene two-dimensional nanosheet material has a good application prospect in the fields of energy storage, composite materials, lubricating materials, adsorbing materials, catalysts and the like.
Drawings
Fig. 1 is SEM photographs of the non-peeled MXene precipitate (a) and the peeled thin layer MXene two-dimensional nanoplatelets (b, c, d) based on the conventional method in example 1.
Fig. 2 is an X-ray diffraction (XRD) spectrum based on thin-layer MXene two-dimensional nanoplatelets of example 1 and MXene precipitate that has not been exfoliated by conventional methods.
Fig. 3 is an SEM photograph of thin layer MXene two-dimensional nanoplatelets (a, b) based on example 2 and MXene precipitates (c, d) that were not exfoliated using conventional methods.
Fig. 4 is an X-ray diffraction (XRD) spectrum based on thin-layer MXene two-dimensional nanoplatelets of example 2 and MXene precipitate that has not been exfoliated by conventional methods.
Fig. 5 is SEM photographs of the non-peeled MXene precipitate (a) and the peeled thin layer MXene two-dimensional nanoplatelets (b, c, d) based on the conventional method in example 3.
Fig. 6 is an X-ray diffraction (XRD) spectrum based on thin-layer MXene two-dimensional nanoplatelets of example 3 and MXene precipitate that has not been exfoliated by conventional methods.
Detailed Description
Unless defined otherwise, technical terms used in the following examples have the same meanings as commonly understood by one of ordinary skill in the art to which the present invention belongs. The test reagents used in the following examples, unless otherwise specified, are all conventional biochemical reagents; the experimental methods are conventional methods unless otherwise specified.
In view of the deficiencies in the prior art, the inventors of the present invention have made extensive studies and extensive practices to propose the technical solution of the present invention, and further explain the technical solution, the implementation process and the principle thereof, etc.
Briefly, the invention is a method for preparing thin layer MXene with high efficiency: dispersing the etched MAX raw material into a stripping solution, oscillating at room temperature for stripping, and freeze-drying to obtain the thin-layer MXene two-dimensional nanosheet layer material.
The inventor of the invention paid creative work, and the obtained technical scheme made a remarkable improvement on the prior art in the following aspects, and the improvement has obvious positive significance in reducing production cost, improving reaction yield and improving reaction effect. The specific description is as follows:
the method for efficiently preparing the thin-layer MXene disclosed by the invention creatively uses a novel stripping material, realizes efficient stripping of the thin-layer MXene, improves the yield, greatly reduces the cost and further improves the stability of the MXene.
Compared with the prior art, the MAX nanosheet layer after etching is stripped through repeated oscillation in water, ethanol or the like, the energy consumption is high, and the yield is low (10% -20%). The invention creatively adopts a novel stripping material, and utilizes the rheological property and viscosity of the novel material to carry out high-efficiency stripping on the etched MAX. The stripping process is as follows: in the oscillation process, the novel stripping material can effectively reduce van der waals force between MXene two-dimensional nanosheets, and meanwhile, the self viscosity of the material generates large tearing force in the oscillation process, so that MAX is stripped efficiently. In particular, polar groups (amino groups and hydroxyl groups) on the surface of the material can be coordinated with transition metal atoms on the surface of MXene, so that the stability of MXene is improved.
Furthermore, the thin-layer MXene two-dimensional material is creatively prepared by using the novel stripping material, the chemical stability and the thermal stability of the thin-layer MXene two-dimensional material are superior to those of the traditional MXene two-dimensional nanosheets, and the electrical property, the dielectric constant and the like of the thin-layer MXene two-dimensional material have richer adjustable spaces.
The invention is described in detail below with reference to embodiments and the accompanying drawings.
The first embodiment is as follows:
adding 2g of lithium fluoride into 40ml of 9M hydrochloric acid, and uniformly mixing; then, MAX with a mass of 2g was slowly added to the resulting mixed solution, and stirred at a temperature of 35 ℃ for 24 hours. And then centrifugally washing to be neutral to obtain the etched MAX raw material.
Weighing 1g of etched MAX raw material, dispersing the MAX raw material in 15ml of 0.6mg/ml carbon nanotube aqueous solution, oscillating and stripping for 1h, and freeze-drying to obtain the thin-layer MXene two-dimensional nanomaterial. For comparison, 1g of etched MAX raw material is weighed and dispersed in 15ml of aqueous solution, and after shaking and stripping for 1h, MXene precipitate is obtained by freeze drying.
Fig. 1 is SEM photographs based on the unexfoliated MXene precipitate (a) in example 1 and the MXene (b, c, d) that was efficiently exfoliated with the carbon nanotube aqueous solution. As shown in the figure, the thin MXene stripped by the carbon nanotube aqueous solution has a loose two-dimensional nanosheet structure, the lamella is ultrathin, and the thickness of the single lamella is about 10 nm. Whereas the comparative MXene precipitate mostly exhibited a massive blocky structure.
Fig. 2 is an X-ray diffraction (XRD) spectrum based on thin layers of MXene two-dimensional nanoplatelets and MXene precipitates of example 1. As shown, a distinct peak (5 deg.) was observed for the peeled MXene two-dimensional material, indicating that the interlayer spacing of MXene was large. Example two:
weighing 1g of etched MAX raw material, dispersing the MAX raw material in 20ml of 5mg/ml chitosan aqueous solution, oscillating and stripping for 1h, and freeze-drying to obtain the MXene two-dimensional nanosheet material. For comparison, 1g of etched MAX raw material is weighed and dispersed in 20ml of aqueous solution, and after shaking and stripping for 1h, MXene precipitate is obtained by freeze drying.
Fig. 3 is an SEM photograph based on thin layers of MXene two-dimensional nanoplatelets (a, b) and MXene precipitates (c, d) in example 2. As shown in the figure, the thin layer MXene stripped by the chitosan aqueous solution presents a loose two-dimensional nanosheet structure, namely, a thin layer, and the thickness of the single layer is about 10 nm. Whereas MXene precipitates mostly exhibit a massive blocky structure.
Fig. 4 is an X-ray diffraction (XRD) spectrum based on thin layers of MXene two-dimensional nanoplatelets and MXene precipitates of example 2. As shown, after stripping, unlike MXene precipitates, the diffraction peaks of the thin layer of MXene that was stripped efficiently all disappeared, indicating that the bulk structure of MAX after etching was well stripped.
EXAMPLE III
And weighing 0.5g of etched MAX raw material, dispersing the MAX raw material in 5ml of 5mg/ml polyacrylamide aqueous solution, oscillating and stripping for 1h, and freeze-drying to obtain the thin-layer MXene two-dimensional nano material. For comparison, 0.5g of etched MAX raw material is weighed and dispersed in 5ml of aqueous solution, and after shaking and stripping for 1h, MXene precipitate is obtained after freeze drying.
Fig. 5 is an SEM photograph based on MXene precipitate (a) and exfoliated thin layer MXene (b, c, d) in example 3. As shown in the figure, the thin layer MXene stripped by Polyacrylamide (PAM) aqueous solution presents a loose two-dimensional nano-lamellar structure, the lamellar is ultrathin, and the lamellar thickness of the single layer is about 10 nm. Whereas MXene precipitates mostly exhibit a massive blocky structure.
Fig. 6 is an X-ray diffraction (XRD) spectrum based on thin layers of MXene two-dimensional nanoplatelets and MXene precipitates of example 3. It can be seen from the comparison that the etched MAX material was well stripped.

Claims (9)

1. A method for efficiently preparing thin-layer MXene is characterized by comprising the following steps: and dispersing the etched MAX bulk material of the layer A element in a certain amount of stripping solution, oscillating and stripping, and freeze-drying to obtain the thin-layer MXene two-dimensional material with high yield.
2. Method for preparing a thin layer MXene according to claim 1, characterized in that: the stripping solution is an aqueous solution of carbon nanotubes, chitosan or polyacrylamide.
3. Method for preparing a thin layer MXene according to claim 1, characterized in that: the concentration of the stripping solution is 0.01-100 mg/mL.
4. Method for preparing a thin layer MXene according to claim 1, characterized in that: the mass ratio of added stripping material to MAX material to be stripped is 1% to 100%.
5. Method for preparing a thin layer MXene according to claim 4, characterized in that: the mass ratio of the added stripping material to the MAX material to be stripped is 2% -20%.
6. Method for preparing a thin layer MXene according to claim 1, characterized in that: the oscillation time is 0.1h-10 h.
7. Method for preparing a thin layer MXene according to claim 1, characterized in that: the thickness of the obtained few-layer MXene sheet layer is 1.5-100nm, and the size of the sheet layer structure is 0.1-10 μm.
8. Use of the thin-layer MXene two-dimensional material prepared by the method of any one of claims 1-8 in preparation of energy storage materials, composite nano materials, lubricating materials, adsorbing materials or catalysts.
9. Method for preparing a thin layer MXene according to claim 1, characterized in that: the element of the A layer is Al or Si.
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114011261A (en) * 2021-10-28 2022-02-08 大连理工大学 General method for enhancing stability of MXene aqueous solution
CN114989875A (en) * 2022-06-21 2022-09-02 中国科学院兰州化学物理研究所 Application of MXene solvent-free nano fluid in tribology field
CN115353108A (en) * 2022-08-23 2022-11-18 太原理工大学 Preparation method of large-size MXene nanosheet

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106633051A (en) * 2016-12-22 2017-05-10 陕西科技大学 Titanium carbide/polyaniline composite material and preparation method thereof
US20180179070A1 (en) * 2015-07-03 2018-06-28 Hohai University Preparation method of sulfonated two-dimensional titanium carbide nanosheet
CN108298541A (en) * 2018-02-05 2018-07-20 中国科学院电工研究所 A kind of preparation method of two-dimensional layer MXene nanometer sheets
CN109671576A (en) * 2018-12-12 2019-04-23 福建翔丰华新能源材料有限公司 Carbon nano tube-MXene composite three-dimensional porous carbon material and preparation method thereof
CN110042424A (en) * 2019-05-29 2019-07-23 辽宁大学 A kind of composite catalyst MXene/CNTs and its preparation method and application
CN110304632A (en) * 2018-03-20 2019-10-08 中国科学院金属研究所 Sheet MXene material and preparation method thereof and energy storage material
CN110498964A (en) * 2019-09-25 2019-11-26 上海交通大学 A kind of high-tension cable thermoplasticity semi-conductive shielding material and preparation method thereof
CN112072126A (en) * 2020-08-31 2020-12-11 华南理工大学 Mxene flexible self-supporting lithium-air battery positive electrode material, Mxene flexible composite film and preparation method thereof

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180179070A1 (en) * 2015-07-03 2018-06-28 Hohai University Preparation method of sulfonated two-dimensional titanium carbide nanosheet
CN106633051A (en) * 2016-12-22 2017-05-10 陕西科技大学 Titanium carbide/polyaniline composite material and preparation method thereof
CN108298541A (en) * 2018-02-05 2018-07-20 中国科学院电工研究所 A kind of preparation method of two-dimensional layer MXene nanometer sheets
CN110304632A (en) * 2018-03-20 2019-10-08 中国科学院金属研究所 Sheet MXene material and preparation method thereof and energy storage material
CN109671576A (en) * 2018-12-12 2019-04-23 福建翔丰华新能源材料有限公司 Carbon nano tube-MXene composite three-dimensional porous carbon material and preparation method thereof
CN110042424A (en) * 2019-05-29 2019-07-23 辽宁大学 A kind of composite catalyst MXene/CNTs and its preparation method and application
CN110498964A (en) * 2019-09-25 2019-11-26 上海交通大学 A kind of high-tension cable thermoplasticity semi-conductive shielding material and preparation method thereof
CN112072126A (en) * 2020-08-31 2020-12-11 华南理工大学 Mxene flexible self-supporting lithium-air battery positive electrode material, Mxene flexible composite film and preparation method thereof

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
LIANJIA ZHAO ET.AL: "Highly Stable Cross-Linked Cationic Polyacrylamide/Ti3C2Tx MXene Nanocomposites for Flexible Ammonia-Recognition Devices" *
ZHI XU ET.AL: "Two-dimensional MXene incorporated chitosan mixed-matrix membranes for efficient solvent dehydration" *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114011261A (en) * 2021-10-28 2022-02-08 大连理工大学 General method for enhancing stability of MXene aqueous solution
CN114011261B (en) * 2021-10-28 2022-09-06 大连理工大学 General method for enhancing stability of MXene aqueous solution
CN114989875A (en) * 2022-06-21 2022-09-02 中国科学院兰州化学物理研究所 Application of MXene solvent-free nano fluid in tribology field
CN115353108A (en) * 2022-08-23 2022-11-18 太原理工大学 Preparation method of large-size MXene nanosheet

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