CN112447659A - 部件承载件和制造部件承载件的方法 - Google Patents
部件承载件和制造部件承载件的方法 Download PDFInfo
- Publication number
- CN112447659A CN112447659A CN202010916809.4A CN202010916809A CN112447659A CN 112447659 A CN112447659 A CN 112447659A CN 202010916809 A CN202010916809 A CN 202010916809A CN 112447659 A CN112447659 A CN 112447659A
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- component
- component carrier
- curved surface
- contact element
- layer structure
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Images
Classifications
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
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- H—ELECTRICITY
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
- H05K1/185—Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
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- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
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- H05K1/00—Printed circuits
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- H05K1/0254—High voltage adaptations; Electrical insulation details; Overvoltage or electrostatic discharge protection ; Arrangements for regulating voltages or for using plural voltages
- H05K1/0256—Electrical insulation details, e.g. around high voltage areas
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- H05K1/11—Printed elements for providing electric connections to or between printed circuits
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- H05K1/115—Via connections; Lands around holes or via connections
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- H05K1/186—Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit manufactured by mounting on or connecting to patterned circuits before or during embedding
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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- H05K3/22—Secondary treatment of printed circuits
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
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- H—ELECTRICITY
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- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6661—High-frequency adaptations for passive devices
- H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/25—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of a plurality of high density interconnect connectors
- H01L2224/251—Disposition
- H01L2224/2518—Disposition being disposed on at least two different sides of the body, e.g. dual array
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- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
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- H01L2924/15313—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a land array, e.g. LGA
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- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
- H05K2201/10621—Components characterised by their electrical contacts
- H05K2201/10636—Leadless chip, e.g. chip capacitor or resistor
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
- H05K2203/107—Using laser light
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- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0017—Etching of the substrate by chemical or physical means
- H05K3/0026—Etching of the substrate by chemical or physical means by laser ablation
- H05K3/0032—Etching of the substrate by chemical or physical means by laser ablation of organic insulating material
- H05K3/0038—Etching of the substrate by chemical or physical means by laser ablation of organic insulating material combined with laser drilling through a metal layer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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- Engineering & Computer Science (AREA)
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- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Geometry (AREA)
- Ceramic Engineering (AREA)
- Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
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Abstract
本发明涉及部件承载件(1),其包括具有至少一个电绝缘层结构和/或至少一个电传导层结构的叠置件(2)、嵌入在叠置件(2)中并且具有弯曲表面部分(4、5)的部件(3)、以及传导接触元件(6、7、8、9),所述传导接触元件与嵌入的部件(3)的弯曲表面部分(4、5)相接触。本发明还涉及制造这种部件承载件(1)的方法。
Description
技术领域
本发明涉及部件承载件和制造部件承载件的方法。
背景技术
常规的部件承载件包括:具有电绝缘层结构和电传导层的叠置件。部件表面安装在叠置件上或嵌入在叠置件中。在部件嵌入在叠置件中的情况下,与嵌入的部件的连接件延伸穿过叠置件的至少一部分。由于较小的尺寸和相应的较小的接触点,在部件与延伸穿过叠置件的传导元件之间的物理连接件的质量在稳定性和传导性两方面均受到限制。
发明内容
本发明的目的是提供部件承载件及其制造方法,通过该部件承载件及其制造方法,改善了与嵌入的部件的连接件的稳定性和传导性两者。
该目的通过独立权利要求的主题来实现。在从属权利要求中提出了另外有利的实施方式。
根据本发明的示例性实施方式,部件承载件包括:叠置件,该叠置件包括至少一个电绝缘层结构和/或至少一个电传导层结构;部件,该部件嵌入在叠置件中并且具有弯曲表面部分;以及传导接触元件,该传导接触元件与嵌入的部件的弯曲表面部分相接触。
根据本发明的另一示例性实施方式,制造部件承载件的方法包括提供包括至少一个电绝缘层结构和/或至少一个电传导层结构的叠置件,将具有至少弯曲表面部分的部件嵌入叠置件中,在叠置件中形成凹部,由此使部件的弯曲表面部分的至少一部分暴露,以及用传导材料至少部分地填充凹部,从而形成延伸到部件的弯曲表面部分的传导接触元件。
在本申请的上下文中,术语“弯曲表面部分”可以特别地指的是非平坦或非平面的表面部分,即,具有弯曲轮廓而不是线性轮廓的表面部分。
具有上述构型的部件承载件特别地在稳定性和传导性方面表现出改进的在嵌入的部件与传导接触元件之间的连接质量。特别地,与常规平坦的表面相比,嵌入的部件的弯曲表面提供增大的接触面积。因此,部件承载件是牢固的并且能够将增大的热量和/或电流传导离开嵌入的部件传导以及将增大的热量和/或电流传导至嵌入的部件。
示例性实施方式的详细描述
在下文中,将解释本发明的另外的示例性实施方式。
根据示例性实施方式,传导接触元件是电传导接触元件和/或热传导接触元件。换言之,传导接触元件可以是能够传导电流的电传导接触元件,传导接触元件可以是能够传导热的热传导接触元件,或者传导接触元件可以是能够传导电流和热两者的电及热传导接触元件。
根据示例性实施方式,弯曲表面部分是凸形的。凸形表面部分提供增加的表面积(与平坦表面相比),并允许与传导接触元件可靠且有效的接触。
根据示例性实施方式,弯曲表面部分是凹形的。凹形表面部分提供了增大的表面积(与平坦表面相比),并且允许与传导接触元件可靠且有效的接触。
这种形状锁定件固定在PCB中能够实现更高的机械连结强度。
根据示例性实施方式,弯曲表面部分对应于部件的电连接区域。换言之,弯曲表面部分用作用于将部件与其他电路电连接的端子。
根据示例性实施方式,该部件是无源部件。
根据示例性实施方式,无源部件是欧姆电阻或电容器。该部件可以特别地形成滤波电路的一部分。
根据示例性实施方式,叠置件的最外侧电传导层结构具有通孔,接触元件延伸穿过该通孔,其中,接触元件的横向延伸范围大于通孔的直径。换言之,接触元件延伸穿过位于最外层结构中的通孔并且朝向弯曲表面部分延伸。此外,接触元件的至少一部分的横向延伸范围大于通孔的直径,特别是接触元件的与嵌入的部件的弯曲表面部分相接触的部分的横向延伸范围大于通孔的直径。因此,接触元件在最外层结构下方形成锚状结构,并且因此具有与部件的弯曲表面部分相接触的进一步增大的表面积。
根据示例性实施方式,嵌入的部件的两个相反的主表面与相应的传导接触元件接触,以用于通过部件的弯曲部分在相对的两个接触元件之间提供电传导和/或热传导。该示例性实施方式特别地与部件阻抗的四端子感测相结合来使用,因为电流供给至位于部件的一侧的端子,而可以对跨过部件的相反一侧的端子来测量电压。
根据示例性实施方式,传导接触元件的一部分呈弯曲的形状,优选地呈凸形的形状。传导接触元件的呈凸形形状的一部分可以不与部件的弯曲表面部分相接触。传导接触元件的与部件的弯曲表面部分相接触的另一部分可以呈凹形形状。特别地,传导接触元件的呈凸形形状的部分可以背向嵌入的部件。传导接触元件的呈凸形形状的部分可以与至少一个电绝缘层结构中的至少一个电绝缘层结构相接触。在该方法中,凹部可以在凹部的背对部件的部分中形成为弯曲的形状,特别地凸形形状。通过采取一种或多种前述措施,接触元件可以以改进的方式将锚固在部件承载件内。特别地,可以通过具有至少部分凸形形状的传导元件来改善传导接触元件相对于周围绝缘材料(例如树脂)的锚固。例如,可以通过将激光加工与弯曲部件的实现形式的组合来产生这种有利特征。
根据示例性实施方式,部件承载件包括以下特征中的至少一者:部件承载件包括表面安装在部件承载件上和/或嵌入在部件承载件内部的至少一个部件,其中,至少一个部件特别地选自:功率半导体部件、电子部件、非导电和/或导电嵌体、热传递单元、光引导元件、能量收集单元、有源电子部件、无源电子部件、电子芯片、存储装置、滤波器、集成电路、信号处理部件、功率管理部件、光电接口元件、电压转换器、密码部件、发送器和/或接收器、机电换能器、致动器、微机电***、微处理器、电容器、电阻器、电感、蓄能器、开关、相机、天线、磁性元件、另外的部件承载件和逻辑芯片,其中,所述功率半导体部件特别地为功率晶体管芯片;其中,部件承载件的电传导层结构中的至少一个电传导层结构包括铜、铝、镍、银、金、钯和钨中的至少一者,所提及的铜、铝、镍、银、金、钯和钨中的任意一者可选地被涂覆有诸如石墨烯之类的超导材料;其中,电绝缘层结构包括树脂、氰酸酯、聚亚苯基衍生物、玻璃、预浸材料、聚酰亚胺、聚酰胺、液晶聚合物、环氧基积层膜、聚四氟乙烯、陶瓷和金属氧化物中的至少一者,所述树脂特别地为增强树脂或非增强树脂,例如为环氧树脂或双马来酰亚胺-三嗪树脂、FR-4、FR-5;其中,部件承载件成形为板;部件承载件构造为印刷电路板、基板和中介层中的一者;其中,部件承载件构造为层压式部件承载件。
根据该方法的示例性实施方式,使用激光器来形成凹部。
根据该方法的示例性实施方式,该激光器是CO2激光器或紫外线(UV)激光器。
根据该方法的示例性实施方式,通过以下方式形成凹部:进行激光打孔使得激光束在暴露的弯曲表面部分处的反射形成袋状部,该袋状部横向地延伸超过位于最外侧的图案化电传导层结构中的通孔。因此,一旦激光器已经将叠置件钻通足够多的距离以使弯曲表面部分暴露,则弯曲表面部分横向地反射激光束,使得形成袋状部,从而导致与通孔相比,凹部具有更大的横向延伸程度。因此,当用传导材料填充凹部时,所得的传导接触元件在部件的弯曲表面部分上方形成锚状结构。
在本申请的上下文中,术语“部件承载件”可以特别地表示能够在其上和/或其中容纳一个或更多个部件以提供机械支撑和/或电连接的任何支撑结构。换言之,部件承载件可以构造为用于部件的机械和/或电子承载件。特别地,部件承载件可以是印刷电路板、有机中介层和IC(集成电路)基板中的一者。部件承载件也可以是将上文提到的类型的部件承载件中的不同部件承载件组合的混合板。
在一种实施方式中,部件承载件包括具有至少一个电绝缘层结构和至少一个电传导层结构的叠置件。例如,部件承载件可以是所提及的一个或多个电绝缘层结构和一个或多个电传导层结构的层压件,特别是通过施加机械压力和/或供给热能而形成。所述叠置件可以提供板状的部件承载件,该部件承载件能够为另外的部件提供大的安装表面,并且仍然非常薄和紧凑。术语“层结构”可以特别地表示在共同平面内的连续层、图案化层或多个非连续岛。
在一种实施方式中,部件承载件成形为板。这有助于紧凑的设计,其中部件承载件仍然为在其上安装部件提供了较大的基础。此外,特别地作为嵌入的电子部件的示例的裸晶片由于其较小的厚度可以方便地嵌入诸如印刷电路板之类的薄板中。
在一种实施方式中,部件承载件构造为以下中的一者:印刷电路板、基板(特别地IC基板)和中介层。
在本申请的上下文中,术语“印刷电路板”(PCB)可以特别地表示通过将若干电传导层结构与若干电绝缘层结构层压而形成的板状部件承载件,例如通过施加压力和/或通过供给热能来层压而形成的板状部件承载件。作为用于PCB技术的优选材料,电传导层结构由铜制成,而电绝缘层结构可以包括树脂和/或玻璃纤维、所谓的预浸料或FR4材料。通过例如激光钻孔或机械钻孔形成穿过层压件的通孔,并且通过用电传导材料(特别是铜)填充该通孔从而形成作为通孔连接部的导孔,可以以期望的方式将各电传导层结构彼此连接。除了可以嵌入在印刷电路板中的一个或多个部件以外,印刷电路板通常被构造为在板状印刷电路板的一个表面或相反的两个表面上容纳一个或多个部件。所述一个或多个部件可以通过焊接而连接至相应的主表面。PCB的介电部分可以包括具有增强纤维(诸如玻璃纤维)的树脂。
在本申请的上下文中,术语“基板”可以特别地表示与PCB相当小的部件承载件相关的部件,一个或更多个部件可以安装在PCB相当小的部件承载件上,并且用作芯片(多个芯片)与另外的PCB之间的连接介质。更具体地,基板可以被理解为用于电连接件或电网络的承载件以及与印刷电路板(PCB)相当但具有相当高密度的横向和/或竖向布置的连接件的部件承载件。横向连接件例如是传导路径,而竖向连接件可以是例如钻削孔。这些横向和/或竖向连接件布置在基板内,并且可以用于提供容置部件或未容置部件(诸如裸晶片)——特别是IC芯片——与印刷电路板或中间印刷电路板的电连接、热连接和/或机械连接。因此,术语“基板”还包括“IC基板”。基板的介电部分可以包括具有增强颗粒(比如增强球体,特别地玻璃球体)的树脂。
基板或中介层可以包括下述各者或由下述各者构成:至少一层玻璃、硅(Si)或可光成像或可干蚀刻的有机材料如环氧基积层材料(比如环氧基积层膜)或聚合物复合物如聚酰亚胺、聚苯并恶唑或苯并环丁烯。
在一种实施方式中,所述至少一个电绝缘层结构包括下述各者中的至少一者:树脂(诸如增强树脂或非增强树脂,例如环氧树脂或双马来酰亚胺-三嗪树脂)、氰酸酯、聚亚苯基衍生物、玻璃(特别是玻璃纤维、多层玻璃、玻璃状材料)、预浸材料(比如FR-4或FR-5)、聚酰亚胺、聚酰胺、液晶聚合物(LCP)、环氧基积层膜、聚四氟乙烯(特氟隆)、陶瓷以及金属氧化物。也可以使用例如由玻璃(多层玻璃)制成的增强材料,诸如网状物、纤维或球体。尽管预浸料、特别地FR4对于刚性PCB而言通常是优选的,但是也可以使用其他材料,特别地使用环氧基积层膜或可光成像的电介质材料。对于高频的应用,诸如聚四氟乙烯、液晶聚合物和/或氰酸酯树脂、低温共烧陶瓷(LTCC)或其他低的DK材料、非常低或超低的DK材料之类的高频材料可以在部件承载件中被实现为电绝缘层结构。
在一种实施方式中,至少一个电传导层结构包括下述各者中的至少一者:铜、铝、镍、银、金、钯和钨。尽管铜通常是优选的,但是其他的材料或其涂覆的其他类型也是可以的,特别地电传导层结构被涂覆有诸如石墨烯之类的超导材料。
至少一个部件可以选自:不导电的嵌体、导电的嵌体(例如金属嵌体,优选地包括铜或铝)、热传递单元(例如热管)、光引导元件(例如光波导或光导体连接件)、电子部件或其组合。例如,该部件可以是有源电子部件、无源电子部件、电子芯片、存储设备(例如DRAM或其他数据存储器)、滤波器、集成电路、信号处理部件、电源管理部件、光电接口元件、发光二极管、光电耦合器、电压转换器(例如DC/DC转换器或AC/DC转换器)、密码部件、发送器和/或接收器、机电转换器、传感器、致动器、微机电***(MEMS)、微处理器、电容器、电阻器、电感、电池、开关、相机、天线、逻辑芯片和能量收集单元。但是,其他部件也可以嵌入在部件承载件中。例如,磁性元件可以用作部件。这样的磁性元件可以是永磁元件(比如铁磁元件、反铁磁元件、多铁磁元件或亚铁磁元件,例如铁氧体芯)或可以是顺磁元件。然而,该部件也可以是基板、中介层或另外的例如呈板中板构型的部件承载件。部件可以表面安装在部件承载件上和/或可以嵌入在部件承载件内部。此外,还可以使用其他的部件作为部件,其他部件特别是那些产生和发射电磁辐射和/或对从环境传播的电磁辐射敏感的部件。
在一种实施方式中,部件承载件是层压式部件承载件。在这种实施方式中,部件承载件是通过施加按压力和/或热而叠置和连接在一起的多层结构的复合物。
在处理部件承载件的内层结构之后,可以用一个或更多个另外的电绝缘层结构和/或电传导层结构而对称地或不对称地覆盖(特别是通过层压)被处理的层结构的一个或相反的两个主表面。换言之,累加可以持续直到获得期望的层数。
在使具有电绝缘层结构和电传导层结构的叠置件的形成完成之后,可以对获得的层结构或部件承载件进行表面处理。
特别地,就表面处理而言,电绝缘的阻焊剂可以施用至层叠置件或部件承载件的一个或相反的两个主表面上。例如,可以在整个主表面上形成例如阻焊剂,然后对阻焊剂层进行图案化,以使一个或更多个电传导表面部分暴露,该电传导表面部分将用于将部件承载件电联接至电子***件。可以有效地保护部件承载件的保持覆盖有阻焊剂的表面部分免受氧化或腐蚀,该表面部分特别是包含铜的表面部分。
就表面处理而言,也可以对部件承载件的暴露的电传导表面部分选择性地施用表面精加工部。这样的表面精加工部可以是在部件承载件的表面上的暴露的电传导层结构(比如垫、导电迹线等,特别地包括铜或由铜组成)上的电传导覆盖材料。如果不保护这种暴露的电传导层结构,则暴露的导电部件承载件材料(特别是铜)可能被氧化,从而降低部件承载件的可靠性。然后表面精加工部例如可以形成为表面安装的部件与部件承载件之间的接合部。表面精加工部具有保护暴露的电传导层结构(特别是铜电路)的功能并且例如通过焊接实现与一个或更多个部件的接合过程。用于表面精加工部的合适材料的示例是OSP(有机可焊性防腐剂)、化学镍浸金(ENIG)、金(特别地是硬金)、化学锡、镍金、镍钯等。
根据下文描述的实施方式的示例,本发明的以上限定的方面和其他方面变得明显,并且参照实施方式的这些示例对其进行说明。
附图说明
图1图示了根据本发明的示例性实施方式的部件承载件。
图2图示了由图1所示的部件承载件提供的改进的散热。
图3图示了在根据本发明示例性实施方式的制造部件承载件期间的一系列步骤。
具体实施方式
附图中的图示是示意性的。在不同的附图中,相似或相同的元件设置有相同的附图标记。
图1图示了本发明的示例性实施方式的部件承载件。
部件承载件1可以形成为板。部件承载件可以构造为以下中的一者:印刷电路板、基板和中介层。部件承载件1可以构造为层压式部件承载件。
部件承载件1包括叠置件2,该叠置件2包括至少一个电绝缘层结构(未详细示出)和/或至少一个电传导层结构(未详细示出)。
部件承载件1的至少一个电绝缘层结构可以包括下述各者中的至少一者:树脂、氰酸酯、聚亚苯基衍生物、玻璃、预浸材料、聚酰亚胺、聚酰胺、液晶聚合物、环氧基积层膜、聚四氟乙烯、陶瓷和金属氧化物,其中,所述树脂特别地为增强树脂或非增强树脂,例如环氧树脂或双马来酰亚胺-三嗪树脂、FR-4、FR-5。
部件承载件1的至少一个电传导层结构可以包括以下各者中的至少一者:铜、铝、镍、银、金、钯和钨,提到的材料中的任一者可选地被涂覆有诸如石墨烯之类的超导材料。
部件承载件1还包括部件3,部件3被嵌入叠置件中并具有弯曲表面部分4、5。如所示的,弯曲表面部分4、5是凸形的。在其他实施方式中,弯曲表面部分可以是凹形的。部件3优选地是无源部件,比如电阻器或形成滤波器的一部分或构成滤波器的电容器。弯曲表面部分4、5可以构成部件3的电连接区域和/或热连接区域。
部件承载件1还包括传导接触元件6、7、8、9,传导接触元件6、7、8、9延伸穿过叠置件2使得传导接触元件与部件3的弯曲表面部分4、5接触。传导接触元件6、7、8、9是热传导的和/或电传导的,因此可以用于将电流和/或热传导至部件3以及将电流和/或热从部件3传导出去。传导接触元件6、7、8、9呈锚状的形状,从而提供与弯曲表面部分4、5的抛物线形的接触表面。
具有上述构型的部件承载件1在部件的接触区域4、5与传导接触元件6、7、8、9之间呈现出改进的接触稳定性和(热和电)传导性。这在图2中通过箭头10和11表示:箭头10和11示出了从部件承载件1的叠置件2内的部件3的散热路径。与标准导孔连接相比,导热率提高了约30%。
除了改进的热性能之外,当部件3是电阻器或其他阻抗时,具有位于结构的两侧的传导接触元件6、7、8、9的部件承载件1还允许进行四端子感测。
应明确指出的是,其他实施方式可以在部件承载件的仅一侧上具有传导接触元件。换言之,一些实施方式可以仅具有传导接触元件6、7,而其他实施方式可以仅具有图1和2中所示的传导接触元件8、9。
图3图示了根据本发明的示例性实施方式的在部件承载件1的制造期间的一系列步骤或状态A、B、C。在步骤A中,诸如CO2激光器或UV激光器之类的激光器12***作成钻削穿过部件承载件1的叠置件的最外侧的传导层结构13的孔,并且由此在叠置件中的嵌入的部件的弯曲表面部分4上方形成凹部14。一旦孔14足够深而使得嵌入的部件3的弯曲表面4暴露,则激光束将被暴露的弯曲表面4反射。这导致了凹部的横向延伸,如步骤B所示,使得所形成的凹部15的横向延伸程度比最初钻削所穿过的最外侧的传导层结构13的直径大。然后,在步骤C中,将传导材料填充至凹部中以形成传导接触元件6。如所示出的,弯曲表面部分4与传导接触元件6的接触表面具有抛物线形状。这提供了稳定的接触和较大的接触表面区域。
同样如图3中所示,传导接触元件6的一部分呈凸形形状。更具体地,传导接触元件6的呈凸形形状的部分不与弯曲表面部分4接触。然而,传导接触元件6的与弯曲表面部分4相接触的另一部分呈凹形形状。同样如图所示,传导接触元件6的呈凸形形状的部分背对嵌入的部件3。有利地,传导接触元件6的呈凸形形状的部分与电绝缘层的绝缘材料相接触。结果,由于增加的接触面积,接触元件6可以通过适当的粘附可靠地锚固在部件承载件内。因此,传导接触元件6可以相对于周围的电绝缘材料锚固。
应当注意的是,术语“包括”不排除其他元件或步骤,并且“一”或“一种”不排除多个。而且,关于不同实施方式所描述的元件可以被组合。
还应当注意的是,权利要求中的附图标记不应被解释为限制权利要求的范围。
本发明的实现形式不限于附图中所示和上面描述的优选实施方式。相反,即使在基本上不同的实施方式的情况下,使用所示的解决方案和根据本发明的原理的多种变型也是可能的。
Claims (20)
1.一种部件承载件(1),包括:
叠置件(2),所述叠置件(2)包括至少一个电绝缘层结构和/或至少一个电传导层结构;
部件(3),所述部件(3)嵌入所述叠置件(2)中并且具有弯曲表面部分(4、5);以及
传导接触元件(6、7、8、9),所述传导接触元件(6、7、8、9)与嵌入的所述部件(3)的所述弯曲表面部分(4、5)相接触。
2.根据权利要求1所述的部件承载件(1),其中,所述传导接触元件(6、7、8、9)是电传导接触元件和/或热传导接触元件。
3.根据权利要求1所述的部件承载件(1),其中,所述弯曲表面部分(4、5)是凸形的。
4.根据权利要求1所述的部件承载件(1),其中,所述弯曲表面部分是凹形的。
5.根据权利要求1所述的部件承载件(1),其中,所述弯曲表面部分(4、5)对应于所述部件(3)的电连接区域。
6.根据权利要求1所述的部件承载件(1),其中,所述部件(3)是无源部件。
7.根据权利要求6所述的部件承载件(1),其中,所述无源部件是欧姆电阻或电容器。
8.根据权利要求1所述的部件承载件(1),其中,所述叠置件的最外侧电传导层结构具有通孔,所述接触元件延伸穿过所述通孔,所述接触元件的横向延伸范围大于所述通孔的直径。
9.根据权利要求1所述的部件承载件(1),其中,嵌入的所述部件的相反的两个主表面与各自相应的传导接触元件相接触,以用于经由所述部件的弯曲部分而在相对的两个接触元件之间提供电传导和/或热传导。
10.根据权利要求1所述的部件承载件(1),其中,所述传导接触元件(6、7、8、9)的一部分呈弯曲的形状,特别地呈凸形形状。
11.根据权利要求10所述的部件承载件(1),其中,所述传导接触元件(6、7、8、9)的呈凸形形状的部分不与所述弯曲表面部分(4、5)相接触。
12.根据权利要求10所述的部件承载件(1),其中,所述传导接触元件(6、7、8、9)的与所述弯曲表面部分(4、5)相接触的另一部分呈凹形形状。
13.根据权利要求10所述的部件承载件(1),其中,所述传导接触元件(6、7、8、9)的呈凸形形状的部分背对嵌入的所述部件(3)。
14.根据权利要求10所述的部件承载件(1),其中,所述传导接触元件(6、7、8、9)的呈凸形形状的部分与所述至少一个电绝缘层结构中的至少一个电绝缘层结构相接触。
15.根据权利要求1所述的部件承载件(1),所述部件承载件(1)包括以下特征中的至少一者:
所述部件承载件(1)包括被表面安装在所述部件承载件上和/或嵌入在所述部件承载件中的至少一个部件(3),其中,所述至少一个部件特别地选自:功率半导体部件、电子部件、非导电和/或导电嵌体、热传递单元、光引导元件、能量收集单元、有源电子部件、无源电子部件、电子芯片、存储装置、滤波器、集成电路、信号处理部件、功率管理部件、光电接口元件、电压转换器、密码部件、发送器和/或接收器、机电换能器、致动器、微机电***、微处理器、电容器、电阻、电感、蓄能器、开关、相机、天线、磁性元件、另外的部件承载件和逻辑芯片,其中,所述功率半导体部件特别地为功率晶体管芯片;
其中,所述部件承载件的所述电传导层结构中的至少一个电传导层结构包括铜、铝、镍、银、金、钯和钨中的至少一者,所提及的铜、铝、镍、银、金、钯和钨中的任意一者可选地被涂覆有诸如石墨烯之类的超导材料;
其中,所述电绝缘层结构包括树脂、氰酸酯、聚亚苯基衍生物、玻璃、预浸材料、聚酰亚胺、聚酰胺、液晶聚合物、环氧基积层膜、聚四氟乙烯、陶瓷和金属氧化物中的至少一者,所述树脂特别地为增强树脂或非增强树脂,例如为环氧树脂或双马来酰亚胺-三嗪树脂、FR-4、FR-5;
其中,所述部件承载件(1)成形为板;
其中,所述部件承载件(1)构造为印刷电路板、基板和中介层中的一者;
其中,所述部件承载件(1)构造为层压式部件承载件。
16.一种制造部件承载件(1)的方法,其中,所述方法包括:
提供包括至少一个电绝缘层结构和/或至少一个电传导层结构(13)的叠置件(2);
将部件(3)嵌入所述叠置件中,所述部件至少具有弯曲表面部分(4、5);
在所述叠置件中形成凹部(14、15),由此使所述部件(3)的所述弯曲表面部分(4、5)的至少一部分暴露;以及
用传导材料至少部分地填充所述凹部(14、15),由此形成延伸到所述部件(3)的所述弯曲表面部分(4、5)的传导接触元件(6、7、8、9)。
17.根据权利要求16所述的方法,其中,所述凹部(14、15)是使用激光器(12)形成的。
18.根据权利要求17所述的方法,其中,所述激光器(12)是CO2激光器或紫外线激光器。
19.根据权利要求16所述的方法,其中,所述凹部(14、15)是通过如下方式而形成的:进行激光打孔使得激光束在暴露的所述弯曲表面部分(4、5)处的反射形成袋状部,所述袋状部横向地延伸超过位于最外侧的图案化的电传导层结构(13)中的通孔。
20.根据权利要求16所述的方法,其中,在所述凹部(14、15)的与所述至少一个电绝缘层结构中的至少一个电绝缘层结构相接触的部分中,所述凹部(14、15)形成为呈弯曲的形状,特别地呈凸形形状。
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