CN111596527B - Rotation parameter optimization method in mask rotary gluing - Google Patents

Rotation parameter optimization method in mask rotary gluing Download PDF

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Publication number
CN111596527B
CN111596527B CN202010565019.6A CN202010565019A CN111596527B CN 111596527 B CN111596527 B CN 111596527B CN 202010565019 A CN202010565019 A CN 202010565019A CN 111596527 B CN111596527 B CN 111596527B
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rotation
film thickness
mask
parameter
parameters
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CN111596527A (en
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林伟
林超
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Chengdu Luwei Photoelectric Co ltd
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Chengdu Luwei Photoelectric Co ltd
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16Coating processes; Apparatus therefor
    • G03F7/162Coating on a rotating support, e.g. using a whirler or a spinner
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68Preparation processes not covered by groups G03F1/20 - G03F1/50
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P90/00Enabling technologies with a potential contribution to greenhouse gas [GHG] emissions mitigation
    • Y02P90/30Computing systems specially adapted for manufacturing

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)

Abstract

S1, establishing a mask model, and selecting a rotation parameter affecting a mask spin coating process and a target parameter checking mask glue coating quality; the rotation parameters comprise the rotation speed rpm of the gluing turntable, the rotation time t of the gluing turntable and the rotation acceleration a of the gluing turntable; the target parameters are film thickness average value, film thickness uniformity and color difference; s2, endowing each rotation parameter with a plurality of parameter values, and establishing an orthogonal table of the parameter values and the target parameters; s3, giving each group of parameter values in the orthogonal table to the coating turntable, carrying out rotary coating on the mask, and finally calculating target parameter values corresponding to each group of parameter values in the orthogonal table; s4, selecting an optimal group of rotation parameters from the orthogonal table; compared with the traditional screening method requiring a large number of tests, the method can obtain the optimal rotation parameters, is more efficient and reliable, and greatly reduces the test cost.

Description

Rotation parameter optimization method in mask rotary gluing
Technical Field
The invention relates to the technical field of mask manufacturing, in particular to a rotation parameter optimization method for high-generation mask rotation gluing.
Background
The Mask is also called a photomask and a photomask, (English name Photo Mask is called Mask for short), is used as the most important core key material in the manufacturing process of the flat panel display, plays a role in exposure masking in the photoetching process of the manufacturing of the flat panel display device, and directly determines the quality of a flat panel display terminal product.
In recent years, the display panel industry in China has developed very rapidly, and particularly in the field of high-rise panels such as G11, the display panel industry has become a tap for global industry development. As a key core material in flat panel display manufacturing, the demand of the mask is also increasing with the expansion of the industrial scale of flat panel display. In the manufacturing process of the mask of the high generation, the photoresist coating process is a very key link. The photoresist coating is used as a front-end process for manufacturing the mask, and the pattern quality and pattern precision of the mask are directly determined by the coating index and quality. In the manufacture of high-generation photomasks, two Coating and combining modes, namely blade Coating (Slit Coating) and Spin Coating (Spin Coating), are generally adopted. The doctor blade is used for uniformly spreading photoresist on the photomask substrate in the uniform advancing process, and the spin coating process is performed after the doctor blade is finished. The working principle of the spin coating method is as follows: when the mask is static, a certain amount of photoresist is spitted out from the upper part of the mask, and then the mask rotates at a high speed, and under the centrifugal effect, the photoresist is uniformly diffused on the mask to form a photoresist film with a certain thickness. The advantages and disadvantages of the spin coating process directly determine the technical indexes of photoresist coating thickness, thickness uniformity, mura (color difference) and the like on the mask plate, and are the most important ring in the whole glue coating process.
Mura is a Japanese character, and as a Japanese Liquid Crystal Display (LCD) emits light in all parts of the world, the character becomes a character which can be communicated all over the world in the display world, and Mura is a phenomenon that the brightness of the display is uneven, various marks are caused, and the phenomenon is comprehensively called chromatic aberration.
For the mask of the low generation, the size is smaller, and parameters such as film thickness, uniformity and the like of photoresist coating are easier to control by adopting a spin coating mode, for example, the size specification of the mask of the G4.5 generation is 800 x 920mm, and the size specification of the mask of the G6 generation is 800 x 960mm. For the high-generation photomask, taking the G11 generation photomask as an example, the size of the mask reaches 1620mm 17mm, and the weight of the mask substrate is more than 100Kg, so that the vibration and the centrifugal force generated in the spin coating process are larger, and the coating process is challenged greatly. In the spin coating process, the spin speed rpm and the spin time t directly determine the film thickness of the coating, and too high spin speed or too long spin time can cause the film thickness to be thinner; too low a spin speed or too short a time may result in a larger film thickness, and in both cases the uniformity of the film thickness of the paste may be deteriorated. In addition, the uniformity and chromatic aberration of the photoresist film thickness can be seriously affected by the rotating acceleration a, large-area chromatic aberration can be generated by the overlarge rotating acceleration, and the middle thin, the periphery thick and the uniformity poor of the photoresist film thickness of the photomask substrate are caused by the overlarge rotating acceleration. Therefore, how to adjust the rotation speed, the rotation time and the rotation acceleration is the key to influence the gluing quality.
The screening method for influencing the spin coating parameters in the prior art comprises the following steps: under the condition that all other parameters are kept unchanged, one parameter value is changed to carry out the test, then the test is carried out one by analogy, and the method has the defects of too large workload and low efficiency; and more mask substrate and photoresist are wasted, and the cost of the test is higher because the cost of the mask substrate and photoresist is high.
Disclosure of Invention
The invention aims to solve the technical problems of low efficiency and high cost of the traditional screening method and provides a rotation parameter optimization method in the rotation gluing of a high-generation mask.
The technical scheme adopted by the invention is as follows: the method for optimizing the rotation parameters in the rotary gluing of the mask plate comprises the following steps:
s1, establishing a mask model, and selecting a rotation parameter affecting a mask spin coating process and a target parameter checking mask gluing quality;
the rotation parameters comprise the rotation speed rpm of the gluing turntable, the rotation time t of the gluing turntable and the rotation acceleration a of the gluing turntable;
the target parameters are film thickness average value, film thickness uniformity and color difference;
s2, endowing each rotation parameter with a plurality of parameter values, and establishing an orthogonal table of the parameter values and the target parameters;
s3, giving each group of parameter values in the orthogonal table to the coating turntable, carrying out rotary coating on the mask, and finally calculating target parameter values corresponding to each group of parameter values in the orthogonal table;
s4, selecting an optimal set of rotation parameters from the orthogonal table.
The method comprises the steps of establishing an orthogonal table by selecting rotation parameters and target parameters which affect a mask spin coating process, giving each group of parameter values in the orthogonal table to a coating turntable, spin coating the mask, calculating a plurality of groups of target parameter values, and optimizing one rotation parameter serving as a mask version of the specification from the plurality of groups of target parameter values. Compared with the traditional screening method requiring a large number of tests, the method can obtain the optimal rotation parameters, is more efficient and reliable, and greatly reduces the test cost.
Further, in the step S2, the parameter value of each rotation parameter is four. 4 3 Only 16 experiments are needed, the experiment times are greatly reduced, the efficiency is improved, and the cost is reduced on the premise of guaranteeing the rotation parameter preference.
Further, the step S3 specifically includes:
the color difference calculating method comprises the following steps: establishing a coordinate system in a color difference graph area, and calculating the areas of all color difference graphs through integration, wherein the calculation formula is as follows:
in the formula (1):
the area size of a certain color difference graph is obtained through integration;
S m : the total area of the color difference pattern;
through S m The color difference M is calculated as follows:
in the formula (2):
S m : the total area of the color difference pattern;
S 0 : mask plate substrate area;
m: color difference;
the method for calculating the average film thickness value comprises the following steps: and measuring the film thickness of the coating turntable after the parameter value adjustment on the mask plate by adopting a film thickness measuring instrument, selecting N measuring points on the film, and calculating to obtain a film thickness average value, wherein the calculation formula is as follows:
T=(P 1 +P 2 …+P N )/N (3)
in the formula (3):
P 1 ,P 2 ...,P N film thickness value for each point;
t is the average value of film thickness
Calculation of film thickness uniformity: the calculation formula is as follows:
in the formula (4):
P max is the maximum film thickness;
P min is the minimum value of the film thickness;
u is film thickness uniformity.
The three indexes of the color difference, the film thickness average value and the film thickness uniformity of each group of parameters can be calculated through the steps, and the three indexes are used for guiding operators to select an optimal group of rotation parameters; the formula is simple in calculation mode and high in calculation efficiency.
Further, the number of the measuring points is 21×21, and 21 points are selected in the X axis and the Y axis respectively, that is, the measuring points are uniformly taken in the X axis and the Y axis, so that the measuring points are more representative, and the whole film thickness can be more completely reflected. Too many and too dense measuring points can increase a large amount of work, and the time and the labor are consumed; too few or too sparse measurement points are not representative, so 441 measurement points are preferred in the present invention.
Further, the measuring points are arranged in an S shape, and the film thickness measuring instrument measures from left to right and then from right to left to back and forth; the arrangement mode is more efficient and reasonable; the film thickness measuring instrument can conveniently carry out back and forth measurement, and the running track of the measuring instrument is also met; compared with the single mode from right to left or from left to right, the method reduces the running track, reduces the time required by measurement and is more efficient.
The beneficial effects of the invention are as follows:
1. the invention provides a high-generation mask spin coating parameter optimization method and obtains an optimal spin coating combination scheme; compared with the traditional screening method requiring a large number of tests, the method can obtain the optimal rotation parameters, is more efficient and reliable, and greatly reduces the test cost.
2. The invention quantifies the chromatic aberration in an integral way, which is more beneficial to screening out the optimal parameter combination.
3. The number of the measuring points is 21 multiplied by 21, namely the measuring points are uniformly taken on the X axis and the Y axis, so that the measuring points are more representative and statistical, and the whole film thickness can be more completely reflected; meanwhile, the measurement is performed in an S shape, so that the method is more efficient and reasonable.
Drawings
FIG. 1 is a graph of the distribution of chromatic aberration on a reticle substrate.
Fig. 2 is a distribution diagram of measurement points.
Fig. 3 is a unitary calculus area schematic.
Fig. 4 is a graph showing a film thickness distribution.
Marked in the figure as: 1. a mask plate substrate; m, chromatic aberration.
Detailed Description
The invention is further described below with reference to the accompanying drawings.
Examples:
in this embodiment, the G11 generation mask is taken as an example, the size of the G11 generation mask is 1620mm 17mm, and the weight of the G11 generation mask substrate is >100Kg. Referring to fig. 1, fig. 1 shows a distribution diagram of a coating color difference on a mask substrate under a normal spin coating process condition, and it can be seen that the color difference is larger, and the coating color difference is cut at the edge of the mask substrate, and is mostly presented in a shape similar to a triangle or a parabola.
Referring to fig. 2, 3 and 4, the method for optimizing rotation parameters in rotary gumming of a mask plate of the invention comprises the following steps:
s1, establishing a mask model, and selecting a rotation parameter affecting a mask spin coating process and a target parameter checking mask gluing quality;
the rotation parameters comprise the rotation speed rpm of the gluing turntable, the rotation time t of the gluing turntable and the rotation acceleration a of the gluing turntable;
the target parameters are a film thickness average value T, film thickness uniformity U and color difference M;
s2, giving four parameter values to each rotation parameter, and establishing an orthogonal table L16 (4 3 ) Only 16 experiments are needed, the experiment times are greatly reduced, the efficiency is improved, and the cost is reduced on the premise of guaranteeing the rotation parameter preference.
Referring to Table 1, table 1 shows the spin coating process factor level L16 (4 3 )。
Table 1: spin coating process factor level L16 (4) 3 )
TABLE 2 orthogonal test and results of spin coating process
Wherein A1, A2, A3, A4, B1, B2, B3, B4, C1, C2, C3 and C4 represent four different parameter values taken by each rotation parameter, respectively.
S3, bringing the rotation parameter values in the table 1 into the table 2, giving three rotation parameter values of each serial number in the table 2 to the coating turntable, carrying out rotary coating on the mask, and finally calculating target parameter values corresponding to each group of parameter values in the orthogonal table;
the color difference calculating method comprises the following steps: establishing a coordinate system in a color difference graph area, and calculating the areas of all color difference graphs through integration, wherein the calculation formula is as follows:
in the formula (1):
the area size of a certain color difference graph is obtained through integration;
S m : the total area of the color difference pattern;
the traditional method only can estimate the color difference and can not quantify the color brightness, but the invention quantifies the color difference in an integral way, thereby being more beneficial to screening out the optimal parameter combination;
referring to FIG. 3, a unitary calculus area schematic, x k-1 Representing y k And y is k-1 The first point of intersection, X k Representing y k And y is k-1 A second point of intersection; y is k And y is k-1 The enclosed area enclosed between the two functions is the area of Mura, and the size of the color difference area can be obtained through an integral algorithm.
Through S m The color difference M is calculated as follows:
in the formula (2):
S m : the total area of the color difference pattern;
S 0 : mask plate substrate area;
m: color difference;
the method for calculating the average film thickness value comprises the following steps: and measuring the film thickness of the coating turntable after the parameter value adjustment is adopted to coat the photoresist on the mask plate by adopting a film thickness measuring instrument, selecting 441 measuring points on the film, and calculating to obtain the average film thickness, wherein the preferable number of the measuring points N is 21 multiplied by 21, and 21 points are respectively selected in the X axis and the Y axis. Namely, the measuring points are uniformly taken on the X axis and the Y axis, so that the measuring points are more representative, and the whole film thickness can be more completely reflected. Too many and too dense measuring points can increase a large amount of work, and the time and the labor are consumed; too few or too sparse measurement points are not representative, so 441 measurement points are preferred in the present invention.
Referring to fig. 2, as another embodiment, the measuring points are arranged in an S shape, and the film thickness measuring instrument measures from left to right and then from right to left, so as to measure back and forth; the arrangement mode is more efficient and reasonable; the film thickness measuring instrument can conveniently carry out back and forth measurement, and the running track of the measuring instrument is also met; compared with the single mode from right to left or from left to right, the method reduces the running track, reduces the time required by measurement and is more efficient.
The calculation formula is as follows:
T=(P 1 +P 2 …+P 441 )/441 (3)
in the formula (3):
P 1 ,P 2 ...,P 441 film thickness value for each point;
calculation of film thickness uniformity: the calculation formula is as follows:
in the formula (4):
P max is the maximum film thickness;
P min is the minimum value of the film thickness.
S4, selecting an optimal set of rotation parameters from the orthogonal table. According to the requirements of high-generation mask pattern precision, the requirements of the processes such as photoetching, developing, etching and the like are combined, the coating thickness of the mask photoresist is controlled within the range of 700-800 nm, the thickness of the photoresist coated with an offset plate in the current production process is 735+/-20 nm, the uniformity of the thickness of the photoresist film is controlled within 3%, the Mura is not or slightly, and if the Mura is serious, the coating failure is directly judged. Thus, the preferred result from table 2 is A3B2C4, i.e. the optimal rotation parameters are: the rotation speed is 400rpm, the rotation time is 25s, and the rotation acceleration is 45r/s 2.
Referring to fig. 4, fig. 4 shows a graph of film thickness values obtained by using the rotation parameters A3B2C4, and it can be seen that the average film thickness value is preferable by changing the rotation parameters.
The above description is only of the preferred embodiments of the present invention and is not intended to limit the present invention, but various modifications and variations can be made to the present invention by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (4)

1. The method for optimizing the rotation parameters in the rotary gluing of the mask plate is characterized by comprising the following steps of:
s1, establishing a mask model, and selecting a rotation parameter affecting a mask spin coating process and a target parameter checking mask gluing quality;
the rotation parameters comprise the rotation speed rpm of the gluing turntable, the rotation time t of the gluing turntable and the rotation acceleration a of the gluing turntable;
the target parameters are a film thickness average value T, film thickness uniformity U and color difference M;
s2, endowing each rotation parameter with a plurality of parameter values, and establishing an orthogonal table of the parameter values and the target parameters;
s3, giving each group of parameter values in the orthogonal table to the coating turntable, carrying out rotary coating on the mask, and finally calculating target parameter values corresponding to each group of parameter values in the orthogonal table;
s4, selecting an optimal group of rotation parameters from the orthogonal table;
the step S3 specifically comprises the following steps:
the calculating method of the chromatic aberration M comprises the following steps: establishing a coordinate system in a color difference graph area, and calculating the areas of all color difference graphs through integration, wherein the calculation formula is as follows:
in the formula (1):
the area size of a certain color difference graph is obtained through integration;
sm: the total area of the color difference pattern;
the difference M is calculated by Sm, and the calculation formula is as follows:
in the formula (2):
sm: the total area of the color difference pattern;
s0: mask plate substrate area;
m: color difference;
the method for calculating the average value T of the film thickness comprises the following steps: and measuring the film thickness of the coating turntable after the parameter value adjustment on the mask plate by adopting a film thickness measuring instrument, selecting N measuring points on the film, and calculating to obtain a film thickness average value, wherein the calculation formula is as follows:
T=(P 1 +P 2 …+P N )/N (3)
in the formula (3):
P 1 ,P 2 ...,P N film thickness value for each point;
calculation of film thickness uniformity U: the calculation formula is as follows:
in the formula (4):
pmax, the maximum film thickness;
pmin is the minimum film thickness.
2. The method for optimizing rotation parameters in rotary photoresist coating of a mask according to claim 1, wherein in step S2, the parameter value of each rotation parameter is four.
3. The method for optimizing rotation parameters in rotary gumming of mask plate as set forth in claim 1, wherein the number of measurement points is 21X 21, and 21 points are selected in X axis and Y axis respectively.
4. The method for optimizing rotation parameters in rotary gumming of mask plate as set forth in claim 1, wherein the measuring points are arranged in an S shape.
CN202010565019.6A 2020-06-19 2020-06-19 Rotation parameter optimization method in mask rotary gluing Active CN111596527B (en)

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CN114334736A (en) * 2021-12-29 2022-04-12 华天科技(西安)有限公司 Process optimization method for wafer gluing

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007181811A (en) * 2005-12-30 2007-07-19 Ind Technol Res Inst Production method for improving uniformity of quality of coating layer
CN102376541A (en) * 2010-08-12 2012-03-14 上海华虹Nec电子有限公司 Method for adjusting uniformity of critical dimensions in integrated circuit manufacture
CN103745271A (en) * 2014-01-02 2014-04-23 上海大学 Forecasting method for induction thermal deposition calcium-phosphate coating process on basis of neural network
CN104635692A (en) * 2014-12-31 2015-05-20 深圳市华星光电技术有限公司 Method for coating photoresist film and coating equipment using method
CN106547169A (en) * 2017-02-04 2017-03-29 京东方科技集团股份有限公司 A kind of photoetching gum coating apparatus
CN106597712A (en) * 2017-02-21 2017-04-26 武汉华星光电技术有限公司 Coating detecting device
CN108559995A (en) * 2018-02-28 2018-09-21 东北大学 A kind of method of laser cladding technological parameter optimization in plane

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7171394B2 (en) * 2003-10-30 2007-01-30 Ford Motor Company Global paint process optimization

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007181811A (en) * 2005-12-30 2007-07-19 Ind Technol Res Inst Production method for improving uniformity of quality of coating layer
CN102376541A (en) * 2010-08-12 2012-03-14 上海华虹Nec电子有限公司 Method for adjusting uniformity of critical dimensions in integrated circuit manufacture
CN103745271A (en) * 2014-01-02 2014-04-23 上海大学 Forecasting method for induction thermal deposition calcium-phosphate coating process on basis of neural network
CN104635692A (en) * 2014-12-31 2015-05-20 深圳市华星光电技术有限公司 Method for coating photoresist film and coating equipment using method
CN106547169A (en) * 2017-02-04 2017-03-29 京东方科技集团股份有限公司 A kind of photoetching gum coating apparatus
CN106597712A (en) * 2017-02-21 2017-04-26 武汉华星光电技术有限公司 Coating detecting device
CN108559995A (en) * 2018-02-28 2018-09-21 东北大学 A kind of method of laser cladding technological parameter optimization in plane

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
钟志有 等.影响聚合物电致发光器件旋涂膜厚因素的研究.半导体光电.2002,第23卷(第03期),摘要、"2.1试验设计"、"3.1 实验结果分析". *

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