CN111154264A - Flexible terahertz dynamic regulation and control material based on stress driving and preparation method thereof - Google Patents
Flexible terahertz dynamic regulation and control material based on stress driving and preparation method thereof Download PDFInfo
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Abstract
The invention provides a flexible terahertz dynamic regulation and control material based on stress driving and a preparation method thereof. The method comprises the following steps: mixing a high-molecular elastomer base material and conductive particles in a preset proportion to obtain mixed powder; heating the mixed powder and obtaining a flexible terahertz dynamic control material intermediate through melt blending; compression molding the flexible terahertz dynamic control material intermediate in a molten blending state to obtain a flexible film of the flexible terahertz dynamic control material; the preset proportion is larger than a critical filling proportion, and the critical filling proportion is the lowest conductive particle filling proportion of the conductive particles which just form a communication network structure after the mixed powder is melted and blended. The flexible terahertz dynamic regulation material can dynamically and efficiently regulate the transmission characteristic of terahertz waves under the action of stress strain, and has wide potential application in the fields of terahertz switching, modulation, sensing, imaging and the like.
Description
Technical Field
The invention belongs to the technical field of terahertz wave dynamic regulation and control, and particularly relates to a flexible terahertz dynamic regulation and control material based on stress driving and a preparation method thereof.
Background
Terahertz (THz) waves cover a broadband range from infrared to a microwave frequency band, and have wide application prospects in the fields of imaging, high-speed broadband communication, radar, sensing and the like. The development of dynamic functional devices such as THz switches, modulation and the like is the basis of further application thereof.
The core of the THz dynamic regulation device is a functional material with dynamically adjustable photoelectric parameters, such as a doped semiconductor, a phase-change material, liquid crystal, a superconducting material, a two-dimensional material represented by graphene and the like. The THz transmission signal intensity is dynamically changed mainly by exciting the material under the conditions of an external electric field, laser or temperature change and the like. But the problem of low regulation efficiency is also common. The development of functional materials capable of realizing higher THz dynamic regulation efficiency is of great significance to the development of the field.
In addition, the THz dynamic control material is mainly a rigid material at present. Recently, a few researches propose that flexible THz fluctuation state regulation is realized by using conductivity change of a two-dimensional material under stress, but the regulation efficiency is limited by the conductivity change amplitude. At present, the high-efficiency THz dynamic regulation and control can be realized by a fresh flexible material. This limits the application of THz waves in the field of flexible optoelectronic devices.
Disclosure of Invention
The present invention aims to address at least one of the above-mentioned deficiencies of the prior art. For example, one of the purposes of the invention is to provide a preparation method of a flexible terahertz dynamic control material based on stress driving. The invention also aims to provide a flexible terahertz dynamic regulation and control material which has the characteristic of dynamically and efficiently regulating and controlling terahertz wave transmission and has wide potential application in the fields of terahertz wave switching, modulation, sensing, imaging and the like.
The invention provides a preparation method of a flexible terahertz dynamic regulation and control material based on stress driving. The preparation method comprises the following steps: mixing the high molecular elastomer base material and the conductive particles according to a preset proportion to obtain mixed powder, and controlling the filling proportion of the conductive particles in the mixed powder to be larger than the critical filling proportion; heating the mixed powder to obtain a flexible terahertz dynamic control material intermediate in a molten blending state; compression molding the flexible terahertz dynamic control material intermediate in a molten blending state to obtain a flexible film of the flexible terahertz dynamic control material; and the critical filling proportion is the lowest filling proportion of the conductive particles, in which the conductive particles just form a communication network structure after the mixed powder is melted and blended.
In one exemplary embodiment of the method of the present invention, the polymeric elastomeric base may be one or more of a silicone thermoplastic vulcanizate, polyurethane, silicone rubber, styrene block copolymer, ethylene-octene copolymer, olefin block copolymer.
In one exemplary embodiment of the method of the present invention, the conductive particles may be metallic conductive particles.
In one exemplary embodiment of the method of the present invention, the conductive particle may be filled in a proportion of 5 to 50 vol%, and the conductive particle may have a particle diameter of 10nm to 10 μm.
In an exemplary embodiment of the method of the present invention, the melt blending temperature may be 150 to 190 ℃, the compression molding temperature may be 120 to 200 ℃, and the compression molding pressure may be 5 to 20 MPa.
The invention further provides a flexible terahertz dynamic regulation and control material based on stress driving. The flexible terahertz dynamic control material is a flexible film, and the flexible film is obtained by mixing a high-molecular elastomer base material and conductive particles in a predetermined proportion to form mixed powder, and then performing melt blending and compression molding; the flexible film is in a first terahertz regulation state under the condition of not bearing stress or bearing first stress, and is in a second terahertz regulation state under the condition of bearing second stress, the first stress is not more than 5% of the plastic deformation failure critical stress value of the flexible film, the second stress is not less than 25% of the plastic deformation failure critical stress value of the flexible film, the first terahertz regulation state corresponds to an on state, and the second terahertz regulation state corresponds to an off state.
In an exemplary embodiment of another aspect of the invention, the thickness of the flexible thin film can be 200-1000 μm, the flexible thin film can be in a first terahertz regulation state under the condition of not bearing stress, and can be in a second terahertz regulation state under the condition of bearing 45-99% of the plastic deformation failure critical stress value, and the first terahertz regulation state and the second terahertz regulation state can realize that the regulation amplitude of terahertz waves can be not lower than 90%.
In an exemplary embodiment of another aspect of the present invention, the predetermined ratio is greater than a critical filling ratio, which is a lowest filling ratio of the conductive particles at which the conductive particles just form a communication network structure after the mixed powder is blended by melting.
In one exemplary embodiment of another aspect of the present invention, the polymeric elastomer base may be one or more of silicone thermoplastic vulcanizate, polyurethane, silicone rubber, styrene block copolymer, ethylene-octene copolymer, olefin block copolymer, and the conductive particles may be metal conductive particles.
According to another aspect of the invention, a terahertz dynamic regulation and control device is provided, and the terahertz dynamic regulation and control device adopts the flexible terahertz dynamic regulation and control material based on stress driving to perform on-off regulation and control on terahertz waves.
Compared with the prior art, the beneficial effects of the invention comprise one or more of the following aspects:
1. the preparation method of the flexible terahertz dynamic control material is capable of controlling the amplitude of the terahertz wave transmission intensity change under the action of stress by changing the filling proportion of the conductive particles.
2. The flexible terahertz dynamic regulation and control material is provided, the strain range is 0-70%, the corresponding resistivity change amplitude reaches 3-7 orders of magnitude under the stress strain effect, and the corresponding terahertz wave transmission intensity regulation and control amplitude reaches 0-99%.
3. When the strain not exceeding the plastic deformation failure critical stress value is applied to the flexible terahertz dynamic regulation material for unloading, the shape, the electrical property and the terahertz regulation performance can be recovered.
4. The terahertz wave transmission characteristic can be dynamically and efficiently regulated and controlled, and the terahertz wave transmission characteristic has wide potential application in the fields of terahertz wave switching, modulation, sensing, imaging and the like.
Drawings
Fig. 1 shows the resistance dynamic change characteristics of a flexible terahertz dynamic control material under the action of strain according to an exemplary embodiment of the present invention;
FIG. 2 shows a terahertz transmission time-domain signal spectrum of the TPU/Ni (30 vol%) flexible terahertz dynamic control material in the strain range of 0-58.5% in FIG. 1;
FIG. 3 shows a terahertz transmission frequency domain signal spectrum of the TPU/Ni (30 vol%) flexible terahertz dynamic control material in the strain range of 0-58.5% in FIG. 1.
Detailed Description
Hereinafter, the flexible terahertz dynamic control material based on stress driving and the preparation method thereof according to the present invention will be described in detail with reference to the exemplary embodiments and the accompanying drawings.
In an exemplary embodiment of the invention, a preparation method of a flexible terahertz dynamic control material based on stress driving can comprise the following steps:
(1) drying treatment of polymer elastomer base material and conductive particles
The polymer elastomer base material and the conductive particles are dried to remove moisture in the polymer elastomer base material and the conductive particles, so that the phenomenon that the mixing is uneven due to local agglomeration of the base material when the subsequent polymer elastomer base material and the conductive particles are melted and blended is avoided. The temperature of the drying treatment may be 60 to 90 ℃, and the time of the drying treatment may be 12 to 24 hours. For example, the polymeric elastomer base may be one or more of a silicone thermoplastic vulcanizate, polyurethane, silicone rubber, styrene block copolymer, ethylene-octene copolymer, olefin block copolymer. For example, the conductive particles are metal conductive particles. Specifically, the conductive particles may be one or more of metal or alloy powders or particles of nickel, iron, copper, aluminum, silver, and alloys thereof.
(2) Preparation of the Mixed powder
Mixing the macromolecular elastomer base material and the conductive particles according to a preset proportion to obtain mixed powder, and controlling the filling proportion of the conductive particles in the mixed powder to be larger than the critical filling proportion. And the critical filling proportion is the lowest filling proportion of the conductive particles, in which the conductive particles just form a communication network structure after the mixed powder is melted and blended. Here, after the conductive particles form a communication network structure, a channel can be provided for electron transmission, so that the resistivity of the flexible terahertz dynamic control material is reduced. In the process that the flexible terahertz dynamic regulation material is stressed to generate strain (or called deformation), the conductive particles are further in contact communication with each other, so that more communication network structures are provided, the electrical property of the flexible terahertz dynamic regulation material is changed, and dynamic regulation or switching of terahertz waves is achieved. Here, when the transmission intensity of the terahertz wave is the maximum value, it can be equivalent to that the terahertz wave dynamic state regulating material is in an "on" state; when the transmission intensity of the terahertz wave dynamic control material to the terahertz wave is reduced to be close to zero, the terahertz wave dynamic control material can be in an off state.
By controlling the filling proportion of the conductive particles in the mixed powder, the prepared flexible terahertz dynamic control material can reach expected resistivity change before and after deformation or stress application, for example, the resistivity change amplitude of 3-7 orders of magnitude is reached, and especially the resistivity change amplitude of 6-7 orders of magnitude is reached. The critical filling ratio of the mixed powder composed of different types of polymer elastomer base materials and conductive particles can be obtained through experiments. For example, for a mixed powder of thermoplastic polyurethane and metallic nickel particles (TPU/Ni), the proportion of the Ni conductive particle filling may be 5 to 50 vol%. Further, the conductive particles may have a particle diameter of 10nm to 10 μm or less.
(3) Heating the mixed powder to form a melt blended intermediate
And heating the mixed powder to melt the macromolecular elastomer base material to obtain the flexible terahertz dynamic control material intermediate in a molten blending state. For example, the temperature of melt blending can be 150-190 ℃, the time of melt blending can be 10-50 min, and the formation of the melt blended intermediate is favorable for uniformly and dispersedly distributing conductive particles in the high polymer base material.
(4) Compression molding to obtain flexible terahertz dynamic control material
And compression molding the flexible terahertz dynamic control material intermediate in the molten blending state to obtain the flexible terahertz dynamic control material flexible film. Specifically, the intermediate in the molten blending state is molded through compression to obtain flexible terahertz dynamic control material films with different thicknesses, so that stress is applied to the flexible terahertz dynamic control material films in the subsequent process, and the dynamic control characteristics of the terahertz dynamic control material films to terahertz waves under strain are tested. Here, the temperature of the compression molding may be 120 to 200 ℃ such as 150 ℃ and the pressure of the compression molding may be 5 to 20MPa, further 10 to 15 MPa. The thickness of the flexible terahertz dynamic control material can be 200-1000 μm, and further can be 500-800 μm.
In another exemplary embodiment of the invention, the flexible terahertz dynamic regulation and control material based on stress driving may include a polymer elastomer base material and conductive particles, wherein the polymer elastomer base material and the conductive particles are mixed according to a predetermined ratio, and are subjected to melt blending and compression molding to obtain flexible films of the flexible terahertz dynamic regulation and control material with different thicknesses, and the flexible films can generate strain to change the resistivity of the flexible films, so as to change the transmission strength of the flexible films to terahertz waves.
Fig. 1 shows the resistance dynamic change characteristics of a flexible terahertz dynamic control material under the action of strain according to an exemplary embodiment of the invention.
In the exemplary embodiment, the strain range of the flexible film of the flexible terahertz dynamic control material can be 0-70%, and the corresponding change amplitude of the resistivity can be 3-7 orders of magnitude. As shown in FIG. 1, thermoplastic polyurethane and metal nickel particles (TPU/Ni) are used as raw materials to prepare flexible films (the thickness of the film is 500 μm) of flexible terahertz dynamic control materials with different Ni filling contents (for example, 28-32 vol%). Specifically, for a TPU/Ni (28 vol%) flexible terahertz dynamic control material flexible film, stress is applied to enable the TPU/Ni flexible terahertz dynamic control material flexible film to generate strain, and when the strain is increased from 0 to about 15%, the resistivity of the TPU/Ni flexible terahertz dynamic control material flexible film is increased from about 107M is reduced to about 100.5Omega, m; the resistivity stabilized at about 10 as the strain increased from about 15% to about 70%0.5Omega, m; when the strain is more than 70%, the flexible film loses elasticity due to strain overload, and is plastically deformed until failure, during which the resistivity of the flexible film increases and eventually returns to about 107Omega, m. The TPU/Ni (28 vol%) flexible terahertz dynamic control material flexible film has the corresponding resistivity change amplitude of 6.5 orders of magnitude. For the TPU/Ni (30 vol%) flexible terahertz dynamic control material flexible thin film, stress is applied to enable the TPU/Ni flexible terahertz dynamic control material flexible thin film to generate strain, and when the strain is increased from 0 to about 20%, the resistivity of the TPU/Ni flexible terahertz dynamic control material flexible thin film is increased from about 106M is reduced to about 10-1Omega, m; the resistivity stabilized at about 10 as the strain increased from about 20% to about 58.5%-1Omega, m; at strains greater than about 58.5%, the flexible film loses elasticity due to strain overload, and plastic deformation occurs until failure, whereDuring the process, the resistivity of the flexible film increases and eventually returns to about 106Omega, m. The TPU/Ni (30 vol%) flexible terahertz dynamic control material flexible film has the corresponding resistivity change amplitude of 7 orders of magnitude. For the TPU/Ni (32 vol%) flexible terahertz dynamic control material flexible thin film, stress is applied to enable the TPU/Ni flexible terahertz dynamic control material flexible thin film to generate strain, and when the strain is increased from 0 to about 20%, the resistivity of the TPU/Ni flexible terahertz dynamic control material flexible thin film is increased from about 105M is reduced to about 10-1Omega, m; the resistivity stabilized at about 10 as the strain increased from about 20% to about 55%-1Omega, m; when the strain is greater than about 55%, the flexible film loses elasticity due to strain overload, undergoes plastic deformation until failure, and in the process, the resistivity of the flexible film increases and eventually returns to about 105Omega, m. The TPU/Ni (32 vol%) flexible terahertz dynamic control material flexible film has the corresponding resistivity change amplitude of 6 orders of magnitude. The TPU/Ni flexible terahertz dynamic control material flexible thin films with different Ni filling contents have different initial resistivity and ultimate strain values. When the strain of the terahertz dynamic regulation material exceeds the limit strain value, the terahertz dynamic regulation function of the terahertz dynamic regulation material to terahertz waves is invalid. This is because the strain overload causes the deformation of the terahertz dynamic control material to be unable to recover until the terahertz dynamic control material is pulled apart, and this process is accompanied by recovery of the resistance. Along with the increase of strain, the resistivity of the flexible terahertz dynamic control material with different Ni filling contents is firstly reduced and then stabilized at a certain value, and finally, when the strain exceeds the ultimate strain of the flexible terahertz dynamic control material (for example, the ultimate strain value of TPU/Ni (30 vol%) is 58.5%, for the TPU/Ni (30 vol%) terahertz dynamic control material, the material can be normally stretched and deformed within the range of 0-58.5%, and the material can lose effectiveness after the value is larger than the value, therefore, the practical application range is 0-58.5%, and the following results can be summarized through multiple experiments: for a flexible thin film (for example, the thickness can be 200-1000 μm) made of a flexible terahertz dynamic control material with the Ni filling content of 28-32 vol%, the resistivity change amplitude adjustment of 6-7 orders of magnitude can be recoverably realized between zero applied stress and a critical stress value during failure.
In general, for a terahertz dynamic control material prepared from the same raw material, the change range of the resistivity of samples with different conductive particle addition amounts is not large, and the main difference is that the initial resistivity and the value of the resistivity after strain of each sample are different. For the terahertz dynamic control material without the raw material, the resistivity change amplitude is large, and the change range of 3-7 orders of magnitude can be achieved generally.
FIG. 2 shows a terahertz transmission time-domain signal spectrum of the TPU/Ni (30 vol%) flexible terahertz dynamic control material in the strain range of 0-58.5% in FIG. 1. FIG. 3 shows a terahertz transmission frequency domain signal spectrum of the TPU/Ni (30 vol%) flexible terahertz dynamic control material in the strain range of 0-58.5% in FIG. 1.
In the exemplary embodiment, the flexible thin film of the flexible terahertz dynamic control material controls the terahertz wave transmission intensity (for example, transmission time domain signal) to be 0-99%. For example, the flexible terahertz dynamic control material has a strain range of 0-27.7% (about 28%), and the control amplitude of the transmission intensity (e.g., transmission time domain and transmission frequency domain signals) of terahertz waves can reach over 90%. As shown in FIG. 2, when the TPU/Ni (30 vol%) flexible terahertz dynamic control material is in a strain range of 0-58.5%, the terahertz wave transmission time domain signal intensity dynamic control amplitude of the flexible thin film of the flexible terahertz dynamic control material is 0-99%. Specifically, when the strain is 0, the terahertz wave transmission time-domain signal intensity of the TPU/Ni (30 vol%) flexible terahertz dynamic control material is 1.375a.u, the corresponding terahertz wave transmission time-domain signal intensity control amplitude is 0, with the increase of the strain, the terahertz wave transmission time-domain signal intensity of the TPU/Ni (30 vol%) flexible terahertz dynamic control material gradually decreases, when the strain reaches 27.7%, the terahertz wave transmission time-domain signal intensity is 0.1375a.u, the transmission time-domain signal intensity control amplitude of the terahertz wave is (1.375-0.1375)/1.375-90%, when the strain reaches 58.5%, the transmission time-domain signal intensity of the terahertz wave is 0.01375a.u, and the transmission time-domain signal intensity control amplitude of the corresponding terahertz wave is (1.375-0.01375)/1.375-99%. As shown in FIG. 3, when the TPU/Ni (30 vol%) flexible terahertz dynamic control material is in a strain range of 0-58.5%, terahertz transmission frequency domain signals are greatly changed in a THz range of 0.1-1.0, and the terahertz wave transmission frequency domain signal intensity dynamic control amplitude of the flexible film of the flexible terahertz dynamic control material is 0-96%. The corresponding terahertz transmission frequency domain signals are greatly changed in the range of 0.1-1.0 THz, wherein the terahertz transmission intensity at the frequency point of 0.28THz can be changed by about 96%. Specifically, at the frequency point of 0.28THz, when the strain is 0, the transmission frequency domain signal intensity of the terahertz wave of the TPU/Ni (30 vol%) flexible terahertz dynamic control material is 32.5a.u, and the corresponding terahertz wave transmission frequency domain signal intensity control amplitude is 0. With the increase of strain, when the strain is 27.7% (about 28%), the transmission frequency domain signal intensity of the terahertz wave of the TPU/Ni (30 vol%) flexible terahertz dynamic control material is 3.25a.u, and the transmission frequency domain signal intensity control amplitude of the terahertz wave is (32.5-3.25)/32.5-90%; when the strain reaches 58.5%, the transmission frequency domain signal intensity of the terahertz wave is 1.3a.u, and the transmission frequency domain signal intensity control amplitude of the corresponding terahertz wave is (32.5-1.3)/32.5-96%. In general, for a flexible thin film made of TPU/Ni (30 vol%) and 500 μm thick flexible terahertz dynamic control material, when the strain is 0, the flexible thin film made of the flexible terahertz dynamic control material has the maximum terahertz wave transmission intensity, when the strain is increased from 0 to 27.7%, the control amplitude (transmission time domain and transmission frequency domain signal intensity) of the flexible thin film to terahertz waves reaches over 90%, and when the strain is increased from 27.7 to 58.5%, the control amplitude to terahertz waves can reach 99% at most (transmission time domain signal intensity).
Through similar multiple experiments, it can be summarized that: for a flexible thin film (for example, the thickness may be 200 to 1000 μm) of a flexible terahertz dynamic control material with a Ni filling content of 28 to 32 vol%, a state (also referred to as an "on" state) in which no stress is applied may be used, and a state (also referred to as an "off" state) in which a stress value between an initial stress value of 25 to 30% and a critical stress value at the time of plastic deformation to failure is applied may be used, so that the terahertz wave control amplitude can be recoverably achieved to be not less than 90%, even to 99%.
In addition, the inventor summarizes the following results after a plurality of similar experiments: the flexible film of the flexible terahertz dynamic control material is prepared by melting, blending and compression molding a mixed powder material with metal conductive particle filling amount larger than critical filling proportion, wherein the mixed powder material is one or more of organic silicon thermoplastic vulcanizate, polyurethane, silicon rubber, styrene block copolymer, ethylene-octene copolymer and olefin block copolymer, and the flexible terahertz dynamic control material has a thickness of 200-1000 mu m, and can be prepared by the following steps: the terahertz wave modulation method is characterized by being in a first terahertz modulation state (also called as an 'on' state) under the condition of not bearing stress, and being in a second terahertz modulation state under the condition of bearing 45-99% of a plastic deformation failure critical stress value, wherein the first terahertz modulation state and the second terahertz modulation state can realize modulation amplitude of terahertz waves to be not less than 90% and even to be as high as 99%.
Exemplary embodiments of the present invention are further illustrated and described below in conjunction with specific examples.
Example 1
Drying the thermoplastic polyurethane and the metal nickel particles at 60 ℃ for 24h, and removing the moisture in the thermoplastic polyurethane and the metal nickel particles. Wherein the particle size of the metallic nickel particles is 50 nm.
And mixing the dried thermoplastic polyurethane and the metal nickel particles according to the filling proportion of the metal nickel particles being 30 vol% to obtain mixed powder, and heating the mixed powder to obtain the melt blending flexible terahertz dynamic control intermediate. Wherein the temperature of melt blending is 160 ℃, and the time of melt blending is 30 min.
And (3) performing compression molding on the fused and blended terahertz intermediate to obtain flexible terahertz dynamic control material films with different thicknesses. Wherein the temperature of the compression molding process is 150 ℃, the pressure of the compression molding process is 5.5Mpa, and the thickness of the prepared flexible film of the flexible terahertz dynamic control material is 500 mu m. The strain range of the flexible film of the flexible terahertz dynamic control material is 0-58.5%, the corresponding resistivity change amplitude is 6-7 orders of magnitude, and the corresponding terahertz wave transmission intensity dynamic control amplitude is 0-99%.
Example two
The thermoplastic olefin block copolymer and the metallic aluminum particles were dried at 85 ℃ for 20 hours to remove moisture from the thermoplastic olefin block copolymer and the metallic aluminum particles. Wherein the size of the metallic aluminum particles is 5 μm.
And mixing the dried thermoplastic olefin block copolymer with metal aluminum particles according to the filling proportion of the metal aluminum particles being 40 vol% to obtain mixed powder, and heating the mixed powder to obtain the melt blending flexible terahertz dynamic control intermediate. Wherein the temperature of melt blending is 180 ℃, and the time of melt blending is 20 min.
And (3) performing compression molding on the fused and blended terahertz intermediate to obtain flexible films of flexible terahertz dynamic control materials with different thicknesses. Wherein the temperature of the compression molding process is 150 ℃, the pressure of the compression molding process is 10Mpa, and the thickness of the prepared flexible film of the flexible terahertz dynamic control material is 700 mu m.
Through detection, the flexible film of the example is in a first terahertz regulation state under the condition of not bearing stress, which is equivalent to an on state; and the terahertz wave is in a second terahertz regulation and control state under the condition of bearing 50% of the plastic deformation failure critical stress value, namely an off state, and the regulation and control amplitude of the terahertz wave is not lower than 93%.
In summary, the flexible terahertz dynamic control material based on stress driving and the preparation method thereof have the following advantages:
1. the preparation method of the flexible terahertz dynamic regulation and control material is provided, wherein the filling proportion of conductive particles can be changed to regulate and control the amplitude of the terahertz wave transmission intensity change under the action of stress;
2. providing a flexible terahertz dynamic regulation and control material, wherein the strain range is 0-70%, the corresponding resistivity change amplitude reaches 3-7 orders of magnitude, and the corresponding terahertz wave transmission intensity regulation and control amplitude reaches 0-99%;
3. when the strain not exceeding the plastic deformation failure critical stress value is applied to the flexible terahertz dynamic regulation material for unloading, the shape, the electrical property and the terahertz regulation performance characteristic can be recovered;
4. the terahertz wave transmission characteristic can be dynamically and efficiently regulated and controlled, and the terahertz wave transmission characteristic has wide potential application in the fields of terahertz wave switching, modulation, sensing, imaging and the like.
Although the present invention has been described above in connection with the exemplary embodiments and the accompanying drawings, it will be apparent to those of ordinary skill in the art that various modifications may be made to the above-described embodiments without departing from the spirit and scope of the claims.
Claims (10)
1. A preparation method of a flexible terahertz dynamic regulation and control material based on stress driving is characterized by comprising the following steps:
mixing a high-molecular elastomer base material and conductive particles in a preset proportion to obtain mixed powder;
heating the mixed powder and obtaining a flexible terahertz dynamic control material intermediate through melt blending;
compression molding the flexible terahertz dynamic control material intermediate in a molten blending state to obtain a flexible film of the flexible terahertz dynamic control material;
the preset proportion is larger than a critical filling proportion, and the critical filling proportion is the lowest conductive particle filling proportion of the conductive particles which just form a communication network structure after the mixed powder is melted and blended.
2. The preparation method of the stress-driven-based flexible terahertz dynamic control material, according to claim 1, wherein the high-molecular elastomer base material is one or more of silicone thermoplastic vulcanizate, polyurethane, silicone rubber, styrene block copolymer, ethylene-octene copolymer, and olefin block copolymer.
3. The preparation method of the flexible terahertz dynamic control material based on stress driving according to claim 1, wherein the conductive particles are metal conductive particles.
4. The preparation method of the flexible terahertz dynamic control material based on stress driving according to claim 1, wherein the filling proportion of the conductive particles is 5-50 vol%, and the particle size of the conductive particles is 10 nm-10 μm.
5. The preparation method of the stress-driven flexible terahertz dynamic control material, according to claim 1, is characterized in that the melt blending temperature is 150-190 ℃, the compression molding temperature is 120-200 ℃, and the compression molding pressure is 5-20 MPa.
6. The flexible terahertz dynamic regulation and control material based on stress driving is characterized by being a flexible film, wherein the flexible film is obtained by mixing a high-molecular elastomer base material and conductive particles in a preset proportion to form mixed powder, and then performing melt blending and compression molding; the flexible film is in a first terahertz regulation state under the condition of not bearing stress or bearing first stress, and is in a second terahertz regulation state under the condition of bearing second stress, the first stress is not more than 5% of the plastic deformation failure critical stress value of the flexible film, the second stress is not less than 25% of the plastic deformation failure critical stress value of the flexible film, the first terahertz regulation state corresponds to an on state, and the second terahertz regulation state corresponds to an off state.
7. The stress-drive-based flexible terahertz dynamic regulation and control material as claimed in claim 6, wherein the thickness of the flexible thin film is 200-1000 μm, the flexible thin film is in a first terahertz regulation and control state under the condition of not bearing stress, and is in a second terahertz regulation and control state under the condition of bearing 45-99% of the critical stress value of plastic deformation failure, and the first terahertz regulation and control state and the second terahertz regulation and control state can realize the regulation and control amplitude of terahertz waves to be not less than 90%.
8. The stress-drive-based flexible terahertz dynamic control material as claimed in claim 6, wherein the predetermined ratio is greater than a critical filling ratio, and the critical filling ratio is the lowest filling ratio of conductive particles at which the conductive particles just form a connected network structure after the mixed powder is melted and blended.
9. The flexible terahertz dynamic control material based on stress driving according to claim 6, wherein the high molecular elastomer base material is one or more of silicone thermoplastic vulcanizate, polyurethane, silicone rubber, styrene block copolymer, ethylene-octene copolymer, and olefin block copolymer, and the conductive particles are metal conductive particles.
10. A terahertz dynamic regulation device, which is characterized in that the terahertz dynamic regulation device adopts the flexible terahertz dynamic regulation material based on stress driving according to any one of claims 6 to 9 to perform on-off regulation on terahertz waves.
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