CN110624562A - A kind of preparation method of composite cadmium sulfide heterojunction photocatalyst - Google Patents

A kind of preparation method of composite cadmium sulfide heterojunction photocatalyst Download PDF

Info

Publication number
CN110624562A
CN110624562A CN201910827836.1A CN201910827836A CN110624562A CN 110624562 A CN110624562 A CN 110624562A CN 201910827836 A CN201910827836 A CN 201910827836A CN 110624562 A CN110624562 A CN 110624562A
Authority
CN
China
Prior art keywords
znin
cds
preparation
cadmium sulfide
visible light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
CN201910827836.1A
Other languages
Chinese (zh)
Inventor
高雨
徐振和
任晓东
徐宝彤
樊苗苗
丁茯
孙亚光
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenyang University of Chemical Technology
Original Assignee
Shenyang University of Chemical Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenyang University of Chemical Technology filed Critical Shenyang University of Chemical Technology
Priority to CN201910827836.1A priority Critical patent/CN110624562A/en
Publication of CN110624562A publication Critical patent/CN110624562A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J27/00—Catalysts comprising the elements or compounds of halogens, sulfur, selenium, tellurium, phosphorus or nitrogen; Catalysts comprising carbon compounds
    • B01J27/02—Sulfur, selenium or tellurium; Compounds thereof
    • B01J27/04—Sulfides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J35/00—Catalysts, in general, characterised by their form or physical properties
    • B01J35/30—Catalysts, in general, characterised by their form or physical properties characterised by their physical properties
    • B01J35/39—Photocatalytic properties
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B3/00—Hydrogen; Gaseous mixtures containing hydrogen; Separation of hydrogen from mixtures containing it; Purification of hydrogen
    • C01B3/02—Production of hydrogen or of gaseous mixtures containing a substantial proportion of hydrogen
    • C01B3/04—Production of hydrogen or of gaseous mixtures containing a substantial proportion of hydrogen by decomposition of inorganic compounds, e.g. ammonia
    • C01B3/042—Decomposition of water
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2203/00—Integrated processes for the production of hydrogen or synthesis gas
    • C01B2203/02—Processes for making hydrogen or synthesis gas
    • C01B2203/0266—Processes for making hydrogen or synthesis gas containing a decomposition step
    • C01B2203/0277—Processes for making hydrogen or synthesis gas containing a decomposition step containing a catalytic decomposition step
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2203/00—Integrated processes for the production of hydrogen or synthesis gas
    • C01B2203/10—Catalysts for performing the hydrogen forming reactions
    • C01B2203/1041—Composition of the catalyst
    • C01B2203/1076—Copper or zinc-based catalysts
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/30—Hydrogen technology
    • Y02E60/36—Hydrogen production from non-carbon containing sources, e.g. by water electrolysis

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Inorganic Chemistry (AREA)
  • Catalysts (AREA)

Abstract

一种复合硫化镉异质结光催化剂的制备方法，涉及一种催化剂的制备方法，本发明为一种新型用于增强可见光光催化活性的一种银离子掺杂硫代铟酸锌复合硫化镉（Ag:ZnIn2S4/CdS）的异质结光催化剂的制备方法，以硝酸银、醋酸锌、醋酸铟、硫代乙酰胺和硫化镉按照一定的比例在水热条件下反应，并获得目标光催化剂。这种新型的可见光光催化剂结构清晰，组成明确，通过Ag+的掺杂可以显著增强ZnIn2S4的光子利用率，与CdS复合后可以使光生载流子的扩散范围增大，抑制光生电子‑空穴对的重组从而增强可见光催化活性，Ag:ZnIn2S4/CdS复合材料由于其高可见光活性和良好的制氢能力，在清洁能源生产和能量转换方面具有广阔的前景。是一种未来光明的催化剂。A preparation method of a composite cadmium sulfide heterojunction photocatalyst, relating to a preparation method of a catalyst, the invention is a novel silver ion-doped zinc thioindate composite cadmium sulfide for enhancing the photocatalytic activity of visible light (Ag:ZnIn 2 S 4 /CdS) heterojunction photocatalyst preparation method, using silver nitrate, zinc acetate, indium acetate, thioacetamide and cadmium sulfide to react under hydrothermal conditions according to a certain ratio, and obtain target photocatalyst. This new type of visible light photocatalyst has a clear structure and a clear composition. The photon utilization rate of ZnIn 2 S 4 can be significantly enhanced by the doping of Ag + , and the diffusion range of photo-generated carriers can be increased after compounding with CdS, and the photo-generated electrons can be suppressed. ‑Recombination of hole pairs to enhance visible light catalytic activity, Ag:ZnIn 2 S 4 /CdS composites have broad prospects in clean energy production and energy conversion due to their high visible light activity and good hydrogen production capacity. A catalyst for a bright future.

Description

一种复合硫化镉异质结光催化剂的制备方法A kind of preparation method of composite cadmium sulfide heterojunction photocatalyst

技术领域technical field

本发明涉及一种催化剂制备方法，特别是涉及一种复合硫化镉异质结光催化剂的制备方法。The invention relates to a method for preparing a catalyst, in particular to a method for preparing a composite cadmium sulfide heterojunction photocatalyst.

背景技术Background technique

氢能，作为一种环境友好，清洁无污染的新型能源可以通过光催化分解水来制备。光催化被认为是一种理想的环境处理和能源再生技术，因为它可以由太阳能驱动，反应可在常温常压下进行。为了实现高效水分解生成氢气，人们已经开发出大量用于制氢气的半导体光催化剂。在以往的研究中，TiO2光催化剂引起了全球环境和能源研究者的关注。TiO2是一种宽带隙半导体，其响应范围仅在紫外光区域，而紫外光仅占太阳光谱的4-5％。因此，将光催化范围扩展到可见光区域，是提高光催化反应效率的关键。Hydrogen energy, as an environmentally friendly, clean and pollution-free new energy source, can be prepared by photocatalytic water splitting. Photocatalysis is considered to be an ideal technology for environmental treatment and energy regeneration because it can be driven by solar energy and the reaction can be carried out at normal temperature and pressure. In order to achieve efficient water splitting to generate hydrogen, a large number of semiconductor photocatalysts for hydrogen production have been developed. In previous studies, TiO2 photocatalysts have attracted the attention of global environmental and energy researchers. TiO2 is a wide-bandgap semiconductor whose response range is only in the ultraviolet region, which accounts for only 4-5% of the solar spectrum. Therefore, extending the photocatalytic range to the visible light region is the key to improving the photocatalytic reaction efficiency.

目前，AB2X4系列半导体因其在电荷储存和热电等不同领域的潜在应用而备受关注。ZnIn2S4作为多组分金属硫化物属于AB2X4（A = Zn，Ca，Cu，Cd; B = Al，Ga，In; X = S，Se，Te），它具有独特的层状结构和窄带隙（2.34-2.48 eV），适合吸收可见光，是一种非常稳定的新催化剂。但单纯ZnIn2S4的光催化效率低，光催化活性有待进一步提高。因此，如何增大半导体材料的可见光光谱响应范围，同时缩短光生载流子从半导体内部转移至表面所需要的时间，进而降低载流子的重组速率而增强光催化活性，已成为光催化研究领域亟待解决的问题。由于Ag+具有4d电子结构，在ZnIn2S4中掺杂少量Ag+，可在半导体中产生Ag4d施主能级，使ZnIn2S4产生更广的光谱响应范围。同时，电子可以从该价带激发到导带，因此能够提高光子的利用率，以这种方式增强了光催化活性。Currently, AB2X4 series semiconductors are attracting much attention for their potential applications in different fields such as charge storage and thermoelectricity . ZnIn2S4 belongs to AB2X4 ( A = Zn, Ca, Cu, Cd; B = Al, Ga, In ; X = S, Se, Te) as a multicomponent metal sulfide, which has a unique layered structure and narrow bandgap (2.34-2.48 eV), suitable for absorbing visible light, is a very stable new catalyst. However, the photocatalytic efficiency of pure ZnIn 2 S 4 is low, and the photocatalytic activity needs to be further improved. Therefore, how to increase the visible light spectral response range of semiconductor materials and at the same time shorten the time required for photogenerated carriers to transfer from the interior of the semiconductor to the surface, thereby reducing the recombination rate of carriers and enhancing photocatalytic activity has become a field of photocatalytic research. Problems to be solved. Because Ag + has 4d electronic structure, doping a small amount of Ag + in ZnIn 2 S 4 can generate Ag4d donor energy level in the semiconductor, so that ZnIn 2 S 4 can produce a wider spectral response range. At the same time, electrons can be excited from this valence band to the conduction band, so the utilization rate of photons can be improved, and the photocatalytic activity is enhanced in this way.

同时，CdS是最重要的II-VI半导体。其禁带宽度约为2.4 eV，在可见光范围内具有强吸收，光响应范围更宽。然而，由于其较差的吸附性能和光化学不稳定性，使纯CdS的光催化活性受到限制。因此，深入研究CdS与其他活性材料的组合，延迟光生电子和空穴的快速复合，是当前研究的热点问题之一。Meanwhile, CdS is the most important II-VI semiconductor. Its forbidden band width is about 2.4 eV, and it has strong absorption in the visible light range and a wider photoresponse range. However, the photocatalytic activity of pure CdS is limited due to its poor adsorption performance and photochemical instability. Therefore, in-depth study of the combination of CdS and other active materials to delay the rapid recombination of photogenerated electrons and holes is one of the hot issues in current research.

发明内容Contents of the invention

本发明的目的在于提供一种复合硫化镉异质结光催化剂的制备方法，本发明为一种银离子掺杂硫代铟酸锌复合硫化镉（Ag:ZnIn2S4/CdS）的异质结光催化剂的制备方法，以硝酸银、醋酸锌、醋酸铟、硫代乙酰胺和硫化镉按照一定的比例在水热条件下反应，并获得目标光催化剂。制备的光催化剂结构清晰，组成明确，在可见光照射下，可以进行水分解产生氢气。 The purpose of the present invention is to provide a method for preparing a composite cadmium sulfide heterojunction photocatalyst . The preparation method of the junction photocatalyst uses silver nitrate, zinc acetate, indium acetate, thioacetamide and cadmium sulfide to react under hydrothermal conditions according to a certain ratio, and obtains the target photocatalyst. The prepared photocatalyst has a clear structure and a definite composition, and can undergo water decomposition to generate hydrogen under the irradiation of visible light.

本发明的目的是通过以下技术方案实现的：The purpose of the present invention is achieved through the following technical solutions:

一种复合硫化镉异质结光催化剂的制备方法，所述方法为一种银离子掺杂硫代铟酸锌复合硫化镉的异质结光催化剂的制备方法，该方法以三元硫化物ZnIn2S4为基础，通过水热法将Ag+均匀的掺杂于ZnIn2S4中，并且使之与CdS复合；A preparation method of a composite cadmium sulfide heterojunction photocatalyst, the method is a preparation method of a silver ion-doped zinc thioindate composite cadmium sulfide heterojunction photocatalyst, the method uses ternary sulfide ZnIn 2 S 4 as the basis, uniformly doped Ag + in ZnIn 2 S 4 by hydrothermal method, and made it composite with CdS;

包括以下制备过程：Including the following preparation process:

首先，利用溶剂热法合成CdS纳米棒，将制得的CdS纳米棒超声分散在20 mL水中；其次，向其中加入醋酸锌，醋酸铟，硝酸银和L-半胱氨酸，然后再加入硫代乙酰胺，然后将溶液转移到带聚四氟乙烯内衬的不锈钢反应釜中；水热反应过后，将金黄色的沉淀通过离心分离，并用去离子和乙醇依次清洗数次，烘干得到Ag:ZnIn2S4/CdS异质结光催化剂。First, CdS nanorods were synthesized by a solvothermal method, and the prepared CdS nanorods were ultrasonically dispersed in 20 mL of water; secondly, zinc acetate, indium acetate, silver nitrate and L-cysteine were added to it, and then sulfur Substitute acetamide, and then transfer the solution to a stainless steel reactor with a polytetrafluoroethylene liner; after the hydrothermal reaction, the golden precipitate is separated by centrifugation, washed several times with deionized and ethanol, and dried to obtain Ag : ZnIn 2 S 4 /CdS heterojunction photocatalyst.

本发明的优点与效果是：Advantage and effect of the present invention are:

（1）通过水热法可以将Ag+均匀而稳定的掺杂到ZnIn2S4中，可在半导体中产生Ag4d施主能级,在可见光照射下，使能量较小的光子可激发掺杂能级上的电子和空穴，从而提高光子的利用率，促进可见光催化反应。(1) Ag + can be uniformly and stably doped into ZnIn 2 S 4 by the hydrothermal method, which can generate Ag4d donor energy level in the semiconductor, and under the irradiation of visible light, the photons with lower energy can excite the doping energy The electrons and holes on the level can improve the utilization rate of photons and promote the catalytic reaction of visible light.

（2）在制备的Ag:ZnIn2S4/CdS异质结光催化剂中，由于Ag:ZnIn2S4的加入导致光生载流子的扩散范围增大，抑制电子与空穴的复合，延长寿命，使其具有更加优异的光催化性能。(2) In the prepared Ag:ZnIn 2 S 4 /CdS heterojunction photocatalyst, due to the addition of Ag:ZnIn 2 S 4 , the diffusion range of photogenerated carriers increases, which inhibits the recombination of electrons and holes, prolongs the life, so that it has more excellent photocatalytic performance.

（3）本发明采用常见的水热合成法，所合成的Ag:ZnIn2S4/CdS异质结光催化剂结晶度高、分散性好、形状可控，且原料常见，工艺可控，易于实施，符合环境友好的要求。(3) The present invention adopts the common hydrothermal synthesis method, and the synthesized Ag:ZnIn 2 S 4 /CdS heterojunction photocatalyst has high crystallinity, good dispersion, controllable shape, common raw materials, controllable process, and easy Implementation, in line with the requirements of environmental friendliness.

本发明为开发可见光半导体光催化领域提供一种新的技术路径，对于解决日益严重的能源问题具有重要意义。The invention provides a new technical path for developing the field of visible light semiconductor photocatalysis, and is of great significance for solving increasingly serious energy problems.

附图说明Description of drawings

图1为Ag:ZnIn2S4/CdS异质结光催化剂的透射电镜图。Figure 1 is a transmission electron microscope image of Ag:ZnIn 2 S 4 /CdS heterojunction photocatalyst.

具体实施方式Detailed ways

下面结合实施例对本发明进行详细说明，但其并不限制本发明的保护范围。The present invention will be described in detail below in conjunction with the examples, but they do not limit the protection scope of the present invention.

实施例1Example 1

（1）利用溶剂热法制备CdS。首先，在超声波处理下，将硫脲和CdCl2分别分散在10 mL乙二胺中，并继续超声处理。将混合物转移到100 mL Teflon反应釜中，密封并在160℃下保持48小时。 在自然冷却至室温后，手动收集固体产物并通过用去离子水离心彻底洗涤并在60℃下干燥12小时， 获得CdS纳米棒。(1) Preparation of CdS by solvothermal method. First, under sonication, thiourea and CdCl were dispersed in 10 mL of ethylenediamine, respectively, and sonication was continued. The mixture was transferred to a 100 mL Teflon autoclave, sealed and kept at 160 °C for 48 h. After natural cooling to room temperature, the solid product was manually collected and thoroughly washed by centrifugation with deionized water and dried at 60 °C for 12 hours to obtain CdS nanorods.

（2）Ag:ZnIn2S4/CdS异质结光催化剂的合成。在超声条件下将200 mg CdS分散于50mL去离子水中，然后加入282 μL 0.05 mmol/mL醋酸锌溶液，282 μL 0.1 mmol/mL醋酸铟溶液，104 μL 0.8 mmol/L硝酸银溶液，170 μL的0.01 mmol/mL L-半胱氨酸并超声处理10mim。将混合物转移至100 mL Teflon反应釜中，并加入568 μL 0.01mmol/mL 硫代乙酰胺溶液磁力搅拌30 min。将反应釜在160℃下保持6小时。在自然冷却至室温后，手动收集固体产物并用去离子水彻底洗涤，并在50℃下干燥12小时，得到1 wt％ Ag:ZnIn2S4/CdS异质结光催化剂。(2) Synthesis of Ag:ZnIn 2 S 4 /CdS heterojunction photocatalyst. Disperse 200 mg of CdS in 50 mL of deionized water under ultrasonic conditions, then add 282 μL of 0.05 mmol/mL zinc acetate solution, 282 μL of 0.1 mmol/mL indium acetate solution, 104 μL of 0.8 mmol/L silver nitrate solution, and 170 μL of 0.01 mmol/mL L-cysteine and sonicate 10mim. The mixture was transferred to a 100 mL Teflon reaction kettle, and 568 μL of 0.01 mmol/mL thioacetamide solution was added and magnetically stirred for 30 min. The autoclave was maintained at 160°C for 6 hours. After natural cooling to room temperature, the solid product was manually collected and thoroughly washed with deionized water, and dried at 50°C for 12 hours to obtain a 1 wt% Ag:ZnIn 2 S 4 /CdS heterojunction photocatalyst.

实施例2Example 2

如实施例1所述，所不同的是将步骤（2）中加入564 μL 0.05 mmol/mL醋酸锌溶液，564μL 0.1 mmol/mL醋酸铟溶液，208 μL 0.8 mmol/L硝酸银溶液，340 μL的0.01 mmol/mL L-半胱氨酸，1136 μL 0.01 mmol/mL 硫代乙酰胺溶液，则最终的催化剂为含有2 wt％ Ag:ZnIn2S4的2 wt％ Ag:ZnIn2S4/CdS。As described in Example 1, the difference is that 564 μL of 0.05 mmol/mL zinc acetate solution, 564 μL of 0.1 mmol/mL indium acetate solution, 208 μL of 0.8 mmol/L silver nitrate solution, and 340 μL of 0.01 mmol/mL L-cysteine, 1136 μL 0.01 mmol/mL thioacetamide solution, the final catalyst is 2 wt% Ag:ZnIn 2 S 4 /CdS containing 2 wt% Ag:ZnIn 2 S 4 .

实施例3Example 3

如实施例1所述，所不同的是将步骤（2）中加入846 μL 0.05 mmol/mL醋酸锌溶液，846μL 0.1 mmol/mL醋酸铟溶液，312 μL 0.8 mmol/L硝酸银溶液，510 μL的0.01 mmol/mL L-半胱氨酸，1704 μL 0.01 mmol/mL 硫代乙酰胺溶液，则最终的催化剂为含有3 wt％ Ag:ZnIn2S4的3 wt％ Ag:ZnIn2S4/CdS。As described in Example 1, the difference is that 846 μL of 0.05 mmol/mL zinc acetate solution, 846 μL of 0.1 mmol/mL indium acetate solution, 312 μL of 0.8 mmol/L silver nitrate solution, and 510 μL of 0.01 mmol/mL L-cysteine, 1704 μL 0.01 mmol/mL thioacetamide solution, the final catalyst is 3 wt% Ag:ZnIn 2 S 4 /CdS containing 3 wt% Ag:ZnIn 2 S 4 .

实施例4Example 4

如实施例1所述，所不同的是将步骤（2）中加入1128 μL 0.05 mmol/mL醋酸锌溶液，1128 μL 0.1 mmol/mL醋酸铟溶液，416 μL 0.8 mmol/L硝酸银溶液，680 μL的0.01 mmol/mL L-半胱氨酸，2272 μL 0.01 mmol/mL 硫代乙酰胺溶液，则最终的催化剂为含有4 wt％Ag:ZnIn2S4的4 wt％ Ag:ZnIn2S4/CdS。As described in Example 1, the difference is that in step (2), add 1128 μL 0.05 mmol/mL zinc acetate solution, 1128 μL 0.1 mmol/mL indium acetate solution, 416 μL 0.8 mmol/L silver nitrate solution, 680 μL 0.01 mmol/mL L-cysteine, 2272 μL 0.01 mmol/mL thioacetamide solution, the final catalyst is 4 wt% Ag: ZnIn 2 S 4 / CdS.

实施例5Example 5

如实施例1所述，所不同的是将步骤（2）中加入1410 μL 0.05 mmol/mL醋酸锌溶液，1410 μL 0.1 mmol/mL醋酸铟溶液，520 μL 0.8 mmol/L硝酸银溶液，850 μL的0.01 mmol/mL L-半胱氨酸，2840 μL 0.01 mmol/mL 硫代乙酰胺溶液，则最终的催化剂为含有5 wt％Ag:ZnIn2S4的5 wt％ Ag:ZnIn2S4/CdS。As described in Example 1, the difference is that in step (2), add 1410 μL 0.05 mmol/mL zinc acetate solution, 1410 μL 0.1 mmol/mL indium acetate solution, 520 μL 0.8 mmol/L silver nitrate solution, 850 μL 0.01 mmol/mL L-cysteine, 2840 μL 0.01 mmol/mL thioacetamide solution, the final catalyst is 5 wt% Ag: ZnIn 2 S 4 / CdS.

Claims (1)

1. The preparation method of the composite cadmium sulfide heterojunction photocatalyst is characterized in that the method is a preparation method of a silver ion doped zinc thioindate composite cadmium sulfide heterojunction photocatalyst, and ternary sulfide ZnIn is used in the method2S4Based on the hydrothermal reaction of Ag+Is uniformly doped in ZnIn2S4And complexing it with CdS;
the preparation method comprises the following preparation processes:
firstly, synthesizing a CdS nanorod by a solvothermal method, and ultrasonically dispersing the prepared CdS nanorod in 20 mL of water; secondly, adding zinc acetate, indium acetate, silver nitrate and L-cysteine, then adding thioacetamide, and then transferring the solution into a stainless steel reaction kettle with a polytetrafluoroethylene lining; after the hydrothermal reaction, carrying out centrifugal separation on the golden yellow precipitate, sequentially washing the golden yellow precipitate for a plurality of times by using deionized water and ethanol, and drying to obtain Ag, ZnIn2S4A CdS heterojunction photocatalyst.
CN201910827836.1A 2019-09-03 2019-09-03 A kind of preparation method of composite cadmium sulfide heterojunction photocatalyst Withdrawn CN110624562A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910827836.1A CN110624562A (en) 2019-09-03 2019-09-03 A kind of preparation method of composite cadmium sulfide heterojunction photocatalyst

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910827836.1A CN110624562A (en) 2019-09-03 2019-09-03 A kind of preparation method of composite cadmium sulfide heterojunction photocatalyst

Publications (1)

Publication Number Publication Date
CN110624562A true CN110624562A (en) 2019-12-31

Family

ID=68970009

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910827836.1A Withdrawn CN110624562A (en) 2019-09-03 2019-09-03 A kind of preparation method of composite cadmium sulfide heterojunction photocatalyst

Country Status (1)

Country Link
CN (1) CN110624562A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111939933A (en) * 2020-07-16 2020-11-17 沈阳化工大学 A kind of preparation method of ternary ladder type heterojunction semiconductor photocatalyst
CN113134364A (en) * 2021-03-30 2021-07-20 沈阳化工大学 WO (WO)3/Ag:ZnIn2S4Preparation method of composite semiconductor photocatalyst
CN113134368A (en) * 2021-03-22 2021-07-20 沈阳化工大学 CdS/Cu5FeS4Preparation and application of/RGO nano composite photocatalyst
CN113481730A (en) * 2021-07-07 2021-10-08 苏州大学 Super-hydrophobic self-cleaning surface with photocatalytic activity and self-repairing function and preparation method thereof
CN114016077A (en) * 2021-10-28 2022-02-08 福州大学 A kind of cadmium sulfide-indium sulfide zinc heterojunction nanorod array composite material and preparation method thereof
CN114832834A (en) * 2022-05-20 2022-08-02 常州大学 L-CNSx/MCS composite photocatalyst and preparation method and application thereof
CN115739123A (en) * 2022-11-24 2023-03-07 华东理工大学 CdS/Znln 2 S 4 Preparation method and application of heterojunction photocatalyst
CN115837279A (en) * 2022-08-29 2023-03-24 南昌航空大学 A Method of In-Situ Supporting Construction of CdS and ZnIn2S4 Heterojunction
CN116726950A (en) * 2023-06-07 2023-09-12 南昌航空大学 CdS nanometer flower ball based composite ZnIn 2 S 4 Preparation method of nano-sheet catalyst for producing hydrogen by photocatalytic decomposition of water

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103084189A (en) * 2013-01-29 2013-05-08 南昌大学 Preparation method of hydrogen production photocatalyst suitable for seawater or salt lake brine
US20140224665A1 (en) * 2011-09-06 2014-08-14 Panasonic Corporation Semiconductor material, optical hydrogen generating device using same, and method of producing hydrogen
CN105950140A (en) * 2016-04-28 2016-09-21 江苏大学 A method for preparing Ag:ZnIn2S4 luminescent quantum dots and photocatalysts
WO2018209883A1 (en) * 2017-05-18 2018-11-22 大连理工大学 Novel remediation system and method for water and sandy soil based on photocatalytic fuel cell
CN108855143A (en) * 2018-07-09 2018-11-23 河南师范大学 A kind of Z-type structure ZnIn2S4/Ag/Bi2WO6The preparation method of composite photo-catalyst
CN110124693A (en) * 2019-05-28 2019-08-16 沈阳化工大学 The composite metal ion doped deficiency semiconductor light-catalyst preparation method of graphene

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140224665A1 (en) * 2011-09-06 2014-08-14 Panasonic Corporation Semiconductor material, optical hydrogen generating device using same, and method of producing hydrogen
CN103084189A (en) * 2013-01-29 2013-05-08 南昌大学 Preparation method of hydrogen production photocatalyst suitable for seawater or salt lake brine
CN105950140A (en) * 2016-04-28 2016-09-21 江苏大学 A method for preparing Ag:ZnIn2S4 luminescent quantum dots and photocatalysts
WO2018209883A1 (en) * 2017-05-18 2018-11-22 大连理工大学 Novel remediation system and method for water and sandy soil based on photocatalytic fuel cell
CN108855143A (en) * 2018-07-09 2018-11-23 河南师范大学 A kind of Z-type structure ZnIn2S4/Ag/Bi2WO6The preparation method of composite photo-catalyst
CN110124693A (en) * 2019-05-28 2019-08-16 沈阳化工大学 The composite metal ion doped deficiency semiconductor light-catalyst preparation method of graphene

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
GUPING ZHANG ET AL.: ""Preparation of ZnIn2S4 nanosheet-coated CdS nanorod heterostructures for efficient photocatalytic reduction of Cr(VI)"", 《APPLIED CATALYSIS B: ENVIRONMENTAL》 *

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111939933A (en) * 2020-07-16 2020-11-17 沈阳化工大学 A kind of preparation method of ternary ladder type heterojunction semiconductor photocatalyst
CN113134368A (en) * 2021-03-22 2021-07-20 沈阳化工大学 CdS/Cu5FeS4Preparation and application of/RGO nano composite photocatalyst
CN113134364A (en) * 2021-03-30 2021-07-20 沈阳化工大学 WO (WO)3/Ag:ZnIn2S4Preparation method of composite semiconductor photocatalyst
CN113481730A (en) * 2021-07-07 2021-10-08 苏州大学 Super-hydrophobic self-cleaning surface with photocatalytic activity and self-repairing function and preparation method thereof
CN113481730B (en) * 2021-07-07 2022-04-29 苏州大学 A kind of superhydrophobic self-cleaning surface with photocatalytic activity and self-healing function and preparation method thereof
CN114016077B (en) * 2021-10-28 2023-11-17 福州大学 Cadmium sulfide-indium zinc sulfide heterojunction nanorod array composite material and preparation method thereof
CN114016077A (en) * 2021-10-28 2022-02-08 福州大学 A kind of cadmium sulfide-indium sulfide zinc heterojunction nanorod array composite material and preparation method thereof
CN114832834A (en) * 2022-05-20 2022-08-02 常州大学 L-CNSx/MCS composite photocatalyst and preparation method and application thereof
CN114832834B (en) * 2022-05-20 2023-11-14 常州大学 L-CNSx/MCS composite photocatalyst and preparation method and application thereof
CN115837279A (en) * 2022-08-29 2023-03-24 南昌航空大学 A Method of In-Situ Supporting Construction of CdS and ZnIn2S4 Heterojunction
CN115739123A (en) * 2022-11-24 2023-03-07 华东理工大学 CdS/Znln 2 S 4 Preparation method and application of heterojunction photocatalyst
CN116726950A (en) * 2023-06-07 2023-09-12 南昌航空大学 CdS nanometer flower ball based composite ZnIn 2 S 4 Preparation method of nano-sheet catalyst for producing hydrogen by photocatalytic decomposition of water
CN116726950B (en) * 2023-06-07 2024-12-13 南昌航空大学 A preparation method for a photocatalytic water decomposition hydrogen production catalyst based on CdS nanoflower balls composite ZnIn2S4 nanosheets

Similar Documents

Publication Publication Date Title
CN110624562A (en) A kind of preparation method of composite cadmium sulfide heterojunction photocatalyst
CN110624583A (en) Preparation method of a composite graphite phase carbon nitride heterojunction photocatalyst
CN110624563A (en) Preparation method of a silver ion-doped zinc thioindate heterojunction photocatalyst
LU500927B1 (en) MoSe2/DEFECT-RICH ZnIn2S4/CdSe DUAL Z-SCHEME PHOTOCATALYST FOR PHOTOCATALYTIC WATER SPLITTING TO HYDROGEN
CN105080579A (en) A kind of BiOBr/Bi2WO6 composite photocatalyst with heterogeneous structure and its preparation method
CN105709793B (en) Niobium pentoxide nano stick/nitrogen-doped graphene composite photo-catalyst, preparation method and application of cadmium sulfide nano-particles modification
CN104056620B (en) A kind of visible light catalyst and preparation method and application
CN102125859B (en) A kind of preparation method of p-NiO/n-CdS/TiO2 composite semiconductor photocatalyst
CN107824207A (en) A kind of preparation method for the silver phosphate composite photocatalyst for handling water body Malachite Green
CN106824070B (en) One kind two tungsten selenides-nitrogen-doped graphene photocatalysis adsorbent material and preparation method thereof
CN115364855B (en) Preparation method of cuprous oxide/titanium dioxide/graphene oxide ternary nanocomposite
CN111617781A (en) Sulfur indium zinc coated hydrogenated molybdenum bronze Z-type composite photocatalyst and its preparation method and application
CN105568314A (en) A preparation method of CuWO4/WO3 heterostructure nanosheet array film
CN106732660A (en) A kind of preparation method of Graphene small particle zinc sulphide/silver sulfide hetero-junctions visible light catalytic material
CN108295872A (en) A kind of hydro-thermal method preparation Bi2S3/1T@2H-MoS2Method
CN107597147B (en) Nano flower-shaped cadmium sulfide @ nickel sulfide thin film heterostructure and preparation method thereof
CN115400768B (en) Heterojunction CdIn2S4/Bi2WO6Application of piezoelectric-photo-composite catalyst in piezoelectric photodegradation of organic matters
CN106927499B (en) A kind of preparation method of multicomponent compound metal sulfide
CN111871434B (en) Bismuth oxyiodide/nano-diamond composite photocatalyst and preparation method thereof
CN114505080A (en) Method for in-situ preparation of SnO2/SnS2 heterojunction photocatalyst and method of using the same
CN111215097A (en) MoS2/Sb2S3Preparation method of composite photocatalyst
CN107159269A (en) A kind of preparation method of CdS quantum dot/Bi2MoO6 composite photocatalysts
CN110152684B (en) Preparation of Bi2S3@Cu2O@Cu Micro-Nano Heterostructures
CN111250142A (en) Preparation method, product and application of graphite-phase carbon nitride/high-iodine bismuth oxyiodide heterojunction with up-conversion characteristic
CN112547097A (en) CoWO4Preparation method of-CdS one-dimensional nano composite photocatalyst and application of photocatalyst

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WW01 Invention patent application withdrawn after publication
WW01 Invention patent application withdrawn after publication

Application publication date: 20191231