CN110600876A - Broadband polarization reconfigurable antenna based on crossed dipoles and parasitic units - Google Patents
Broadband polarization reconfigurable antenna based on crossed dipoles and parasitic units Download PDFInfo
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- 230000010287 polarization Effects 0.000 title claims abstract description 58
- 230000005855 radiation Effects 0.000 claims abstract description 114
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- 239000003990 capacitor Substances 0.000 claims abstract description 25
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
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- 101710195281 Chlorophyll a-b binding protein Proteins 0.000 description 11
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- 101710095244 Chlorophyll a-b binding protein 3, chloroplastic Proteins 0.000 description 11
- 101710127489 Chlorophyll a-b binding protein of LHCII type 1 Proteins 0.000 description 11
- 101710184917 Chlorophyll a-b binding protein of LHCII type I, chloroplastic Proteins 0.000 description 11
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/50—Structural association of antennas with earthing switches, lead-in devices or lightning protectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q19/00—Combinations of primary active antenna elements and units with secondary devices, e.g. with quasi-optical devices, for giving the antenna a desired directional characteristic
- H01Q19/10—Combinations of primary active antenna elements and units with secondary devices, e.g. with quasi-optical devices, for giving the antenna a desired directional characteristic using reflecting surfaces
- H01Q19/108—Combination of a dipole with a plane reflecting surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q23/00—Antennas with active circuits or circuit elements integrated within them or attached to them
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q5/00—Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements
- H01Q5/20—Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements characterised by the operating wavebands
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q5/00—Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements
- H01Q5/30—Arrangements for providing operation on different wavebands
- H01Q5/307—Individual or coupled radiating elements, each element being fed in an unspecified way
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q5/00—Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements
- H01Q5/50—Feeding or matching arrangements for broad-band or multi-band operation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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Abstract
The invention discloses a broadband polarization reconfigurable antenna based on a cross dipole and a parasitic element, which comprises a cross dipole radiation element, a parasitic radiation element, a patch capacitor, an 3/4 feed square ring, an insulation support column, a coaxial feed line element, a reflecting plate, a PIN diode switch, a microstrip line feed element and a dielectric substrate, wherein the cross dipole radiation element is arranged on the dielectric substrate; a cross dipole radiation unit, a parasitic radiation unit, a microstrip line feed unit, an embedded PIN diode switch and a patch capacitor are etched on the dielectric substrate; the basic unit of the crossed dipole is a butterfly-shaped unit with two orthogonal arms, the two arms of the butterfly-shaped unit are connected through 3/4 feed square rings, and the outer sides of the joints of the feed square rings and the arms are provided with slits; the PIN diode switch is arranged between the microstrip line feed unit and the cross dipole unit. The invention has the advantages of small volume, light weight, simple structure, ultra wide bandwidth and the like, and can realize three working modes by controlling the on-off of the two PIN diode switches.
Description
Technical Field
The invention relates to the research field of mobile communication, in particular to a broadband polarization reconfigurable antenna based on crossed dipoles and parasitic units.
Background
The antenna is an indispensable part of a wireless communication system, and with the rapid development of information technology and wireless communication technology, the antenna technology is rapidly developed correspondingly, and in order to improve the communication quality of the wireless communication system and reduce the cost of the wireless communication system, the main trend of antenna design is multi-functionalization, miniaturization, planarization and ultra-wide broadband. In order to realize the multi-functionalization of a wireless communication antenna system, a reconfigurable antenna technology becomes one of the key technologies of the modern wireless communication antenna, and is also a hotspot of research in the field of antenna theory and design. The polarization reconfigurable antenna is a research focus, and can switch the polarization mode with the best communication quality in real time according to the change of the communication environment, reduce the loss of the wireless communication system caused by polarization mismatch, and improve the communication quality.
In order to realize the switching of the antenna in different polarization operation modes, a microwave switch is usually added to an antenna system to change the surface current distribution of the antenna and realize the switching of the polarization mode of the antenna. Among numerous microwave switches, the PIN diode switch is most widely applied, and has the advantages of high response frequency, high response speed, stable operation, simple realization and the like, so that the PIN diode microwave switch has wide application in the field of microwave switches.
In addition, with the development of wireless communication, wireless applications become more and more complex, and therefore, the wireless communication environment becomes more and more complex, and the challenges brought to wireless communication are that multipath interference and multipath fading are severe, and the communication quality is reduced. The circularly polarized wave has good effect on resisting multipath fading due to the characteristics of the circularly polarized wave. Therefore, the antenna has a circular polarization working mode, and is one of the advantages of the polarization reconfigurable antenna compared with the traditional reconfigurable antenna.
Disclosure of Invention
The invention mainly aims to overcome the defects of the prior art and provide a broadband polarization reconfigurable antenna based on crossed dipoles and parasitic elements. Can realize three polarization working modes of LHCP, RHCP and LP. The antenna can realize 78.9% (1.65 GHz-3.8 GHz) impedance bandwidth and 50.7% (2.35 GHz-3.95 GHz) axial ratio bandwidth in an LHCP working mode, and can overlap the frequency band of 2.35 GHz-3.8 GHz (47.2%); under the RHCP working mode, the antenna can realize the impedance bandwidth of 78.9% (1.65 GHz-3.8 GHz), the axial ratio bandwidth of 59.7% (2.35 GHz-4.35 GHz) and the frequency band of the overlapped frequency band of 2.35 GHz-3.8 GHz (47.2%); the antenna can realize 60% (2.1 GHz-3.9 GHz) impedance bandwidth in an LP working mode.
The invention is realized by at least one of the following technical schemes.
A broadband polarization reconfigurable antenna based on a cross dipole and a parasitic unit comprises a cross dipole radiation unit, a parasitic radiation unit, a patch capacitor, 3/4 feed square rings, an insulating support column, a coaxial feed line unit, a reflecting plate, a PIN diode switch, a microstrip line feed unit and a dielectric substrate;
the cross dipole radiation unit, the parasitic radiation unit, the 3/4 feed square ring and the microstrip line feed unit are etched on the surface of the dielectric substrate; the surface-mounted capacitor is embedded on the surface of the dielectric substrate;
the PIN diode switch is connected with the microstrip line feed unit; the 3/4 feeding square ring is connected with the cross dipole radiation unit;
the coaxial feeder line unit is vertical to the dielectric substrate; the coaxial feeder unit is positioned at the geometric center of the dielectric substrate; the coaxial feeder unit is connected with the microstrip line feeder unit;
the dielectric substrate is fixed on the reflecting plate through the insulating support columns.
Preferably, the microstrip line feed unit includes a first microstrip line feed unit and a second microstrip line feed unit; the first microstrip line feed unit is etched on the front surface of the dielectric substrate; the second microstrip line feed unit is etched on the back of the dielectric substrate;
the coaxial feeder unit comprises a soft coaxial line, and the soft coaxial line comprises a coaxial line outer core and a coaxial line inner core; the coaxial line outer core is connected with the microstrip line feed unit on the back of the dielectric substrate; the coaxial line inner core penetrates through the non-metalized via hole of the dielectric substrate and is connected with the microstrip line feed unit;
3/4 feed square loop 4 includes a first 3/4 feed square loop and a second 3/4 feed square loop;
the cross dipole radiation unit comprises a pair of cross dipoles, and the cross dipoles comprise a first cross dipole radiation unit and a second cross dipole radiation unit; the first cross dipole radiation unit and the second cross dipole radiation unit are etched on the front surface and the back surface which are basically the same as the medium respectively; basic units of the first cross dipole radiation unit and the second cross dipole radiation unit are butterfly units with two orthogonal arms, the two arms of the butterfly unit of the first cross dipole radiation unit are connected through a first 3/4 power feed square ring, and the two arms of the butterfly unit of the second cross dipole radiation unit are connected through a second 3/4 power feed square ring; a first groove and a second groove are symmetrically arranged on the outer side of the connection position of the butterfly-shaped unit of the first cross dipole radiation unit and the first 3/4 power feeding square ring on the front side; a third groove and a fourth groove are formed outside the butterfly-shaped unit of the second cross dipole radiation unit and the second 3/4 power supply square ring on the back surface; the first groove and the second groove are symmetrical; the third groove and the fourth groove are symmetrical;
the parasitic radiation unit comprises a first parasitic radiation unit, a second parasitic radiation unit and a third parasitic radiation unit; the first parasitic radiation unit, the second parasitic radiation unit and the third parasitic radiation unit all comprise four rectangular patch units; the first parasitic radiation unit is etched on the front surface of the dielectric substrate, the second parasitic radiation unit is etched on the front surface of the dielectric substrate, and the third radiation unit is etched on the back surface of the dielectric substrate;
the PIN diode switches comprise a first PIN diode switch, a second PIN diode switch, a third PIN diode switch and a fourth PIN diode switch; the first PIN diode switch and the second PIN diode switch are arranged in a gap between the first microstrip line feed unit and the first cross dipole radiation unit; the two poles of the first PIN diode switch are respectively connected with the first microstrip line feed unit and the first cross dipole radiation unit; the two poles of the second PIN diode switch are respectively connected with the first microstrip line feed unit and the first crossed dipole radiation unit; the third PIN diode switch and the fourth PIN diode switch are arranged in a gap between the second microstrip line feed unit and the second cross dipole radiation unit; the two poles of the third PIN diode switch are respectively connected with the first microstrip line feed unit and the first crossed dipole radiation unit; the two poles of the fourth PIN diode switch are respectively connected with the first microstrip line feed unit and the first crossed dipole radiation unit;
the patch capacitor comprises a first patch capacitor and a second patch capacitor; the first patch capacitor is embedded in a slot in the middle of a first 3/4 power feed square ring on the front surface of the dielectric substrate; the second patch capacitor is embedded in a slot in the middle of a second 3/4 power feed square ring on the back of the dielectric substrate.
Preferably, the dielectric substrate is a high-frequency plate FR-4.
Preferably, the characteristic impedance of the microstrip line feed unit is 40-60 Ω.
Preferably, the gap between the two arms of each butterfly-shaped unit and the four rectangular patch units of the first parasitic radiation unit are respectively arranged between the two butterfly-shaped units; four rectangular patch units of the second parasitic radiation unit are etched on the edge of the front side of the dielectric substrate, and the long sides of the four rectangular patch units are perpendicular to the edge of the dielectric substrate; four rectangular patch units of the third radiation unit are etched on the back of the dielectric substrate, and the long sides of the four rectangular patch units are perpendicular to the sides of the dielectric substrate;
preferably, the first cross dipole radiation unit and the second cross dipole radiation unit are symmetrically distributed on the front surface and the back surface of the dielectric substrate;
preferably, the coaxial SMA joint is located right below the reflection plate.
Preferably, the insulating support columns are made of insulating materials, and the dielectric substrate is fixed on the reflecting plate through the insulating support columns.
Preferably, the reflecting plate is a square topless box, and the thickness of the box is a copper plate with the thickness of 1 mm.
Preferably, the first PIN diode switch and the second PIN diode switch are symmetrical; the third PIN diode switch and the fourth PIN diode switch are symmetrical.
Preferably, each arm of the butterfly unit comprises a trapezoid and a semicircle taking the lower bottom of the trapezoid as a radius, the semicircle is connected with the lower bottom of the trapezoid, and the upper bottom of the trapezoid is connected with the 3/4 feeding square ring.
Compared with the prior art, the invention has the following advantages and beneficial effects:
1. the invention adopts the crossed dipole and the parasitic unit, and the symmetrical grooves are arranged on the outer side of the crossed dipole to adjust the impedance matching, so that a wider impedance bandwidth can be easily obtained through the radiation characteristic of the butterfly unit. In addition, the cross dipole adjusts the axial ratio in the circular polarization working mode by adding the parasitic unit, so that the antenna has wider axial ratio bandwidth; in addition, the size of the feed square ring is properly optimized, so that the impedance bandwidth and the axial ratio bandwidth of the antenna can be effectively improved, and the broadband of the reconfigurable antenna is finally realized.
2. The invention adopts a plane structure, uses the reflecting plate to ensure that the antenna radiates directionally, has good directivity and stable high gain, can realize polarization reconfiguration of three modes, namely LHCP, RHCP and LP, and has simple structure and low manufacturing cost.
3. The microwave switch adopts the PIN diode as the microwave switch, only uses 4 PIN diode switches, and realizes the polarization mode switching by controlling the on-off state of the 4 PIN diodes. Fewer PIN diode switches are used than in other prior efforts, thereby making the design simpler and reducing the effect of dc bias wires on antenna radiation.
Drawings
Fig. 1 is a schematic diagram of a three-dimensional structure of a broadband polarization reconfigurable antenna based on cross dipoles and parasitic elements according to the embodiment;
fig. 2a is a top view of a broadband polarization reconfigurable antenna based on cross dipoles and parasitic elements according to the embodiment;
fig. 2b is a detailed diagram of a feed structure of a broadband polarization reconfigurable antenna based on cross dipoles and parasitic elements according to the embodiment;
fig. 3 is a side view of a broadband polarization reconfigurable antenna based on cross dipoles and parasitic elements according to the present embodiment;
fig. 4 is an example implementation diagram of a broadband polarization reconfigurable antenna based on cross dipoles and parasitic elements according to the embodiment;
fig. 5 is a circuit diagram of a switch bias circuit of a broadband polarization reconfigurable antenna based on cross dipoles and parasitic elements according to the embodiment;
fig. 6 is an equivalent circuit diagram of the conducting state of the PIN diode switch of the broadband polarization reconfigurable antenna based on the cross dipole and the parasitic element according to the embodiment;
fig. 7 is an equivalent circuit diagram of the PIN diode switch off state of the broadband polarization reconfigurable antenna based on the cross dipole and the parasitic element according to the embodiment;
fig. 8 is a graph of the antenna reflection coefficient S11 of the broadband polarization reconfigurable antenna based on cross dipoles and parasitic elements in the LHCP mode according to the embodiment as a function of Frequency;
fig. 9 is a graph of the antenna axial ratio AR of the broadband polarization reconfigurable antenna based on cross dipoles and parasitic elements in the LHCP mode according to the embodiment as a function of Frequency;
fig. 10 is a graph of antenna Gain as a function of Frequency when a broadband polarization reconfigurable antenna based on cross dipoles and parasitic elements is in LHCP mode according to the embodiment;
fig. 11 is xoz plane directional diagram at 2.7GHz when the broadband polarization reconfigurable antenna based on cross dipole and parasitic element is in LHCP mode according to the embodiment;
fig. 12 is a yoz plane directional diagram at 2.7GHz when the broadband polarization reconfigurable antenna based on the cross dipole and the parasitic element is in the LHCP mode according to the embodiment;
fig. 13 is xoz plane directional diagram at 3.3GHz when the broadband polarization reconfigurable antenna based on cross dipoles and parasitic elements is in LHCP mode according to the embodiment;
fig. 14 is a yoz plane directional diagram at 3.3GHz when the broadband polarization reconfigurable antenna based on cross dipoles and parasitic elements is in LHCP mode according to the embodiment;
fig. 15 is a graph of the antenna reflection coefficient S11 of the broadband polarization reconfigurable antenna based on cross dipoles and parasitic elements in the RHCP mode according to the embodiment as a function of Frequency;
fig. 16 is a graph of the antenna axial ratio AR of the broadband polarization reconfigurable antenna based on cross dipoles and parasitic elements in the RHCP mode according to the embodiment as a function of Frequency;
fig. 17 is a graph of antenna Gain as a function of Frequency when the broadband polarization reconfigurable antenna based on cross dipoles and parasitic elements is in the RHCP mode according to the embodiment;
fig. 18 is xoz plane directional diagram at 2.7GHz when the broadband polarization reconfigurable antenna based on cross dipoles and parasitic elements is in RHCP mode according to the embodiment;
fig. 19 is a yoz plane directional diagram at 2.7GHz when the broadband polarization reconfigurable antenna based on cross dipoles and parasitic elements is in the RHCP mode according to the embodiment;
fig. 20 is an xoz plane directional diagram at 3.3GHz when the broadband polarization reconfigurable antenna based on cross dipoles and parasitic elements is in the RHCP mode according to the embodiment;
fig. 21 is a yoz plane directional diagram at 3.3GHz when the broadband polarization reconfigurable antenna based on cross dipoles and parasitic elements is in the RHCP mode according to the embodiment;
fig. 22 is a graph of the antenna reflection coefficient S11 with Frequency change when the broadband polarization reconfigurable antenna based on cross dipoles and parasitic elements is in the LP mode according to the embodiment;
fig. 23 is a graph of antenna Gain as a function of Frequency when the broadband polarization reconfigurable antenna based on cross dipoles and parasitic elements is in LP mode according to the embodiment;
fig. 24 is a 2.7GHz planar pattern when the broadband polarization reconfigurable antenna based on cross dipoles and parasitic elements is in the LP mode according to the embodiment;
fig. 25 is a 3.3GHz planar pattern when the broadband polarization reconfigurable antenna based on cross dipoles and parasitic elements is in the LP mode according to the embodiment;
in the figure, 1-cross dipole radiating element, 2-parasitic radiating element, 3-patch capacitor, 4-3/4 feed square ring, 5-insulating support column, 6-coaxial feeder element, 7-reflector plate, 8-PIN diode switch, 9-microstrip line feeding element, 10 dielectric substrate, 11-first cross dipole radiating element, 12-second cross dipole radiating element, 111-first groove, 112-second groove, 113-third groove, 114-fourth groove, 21-first parasitic radiating element, 22-second parasitic radiating element, 23-third parasitic radiating element, 31-first patch capacitor, 32-second patch capacitor, 81-first PIN diode switch, 82-second PIN diode switch, 83-third PIN diode switch, 84-fourth PIN diode switch, 91-first microstrip line feed unit, 92 second microstrip line feed unit.
Detailed Description
The present invention will be described in further detail with reference to examples and drawings, but the present invention is not limited thereto.
As shown in fig. 1 and fig. 2a, a broadband polarization reconfigurable antenna based on a cross dipole and a parasitic element includes a cross dipole radiation element 1, a parasitic radiation element 2, a patch capacitor 3, 3/4, a feeding square ring 4, an insulating support pillar 5, a coaxial feeder element 6, a reflection plate 7, a PIN diode switch 8, a microstrip line feeding element 9, and a dielectric substrate 10.
The microstrip line feed unit 9 includes a first microstrip line feed unit 91 and a second microstrip line feed unit 92; the first microstrip line feed unit 91 is etched on the front surface of the dielectric substrate 10; the second microstrip feed element 92 is etched on the back side of the dielectric substrate 10. The insulating support posts 5 support the dielectric substrate 10 above the reflector plate 7.
As shown in fig. 3, the coaxial feeder unit 6 includes a soft coaxial line, which includes a coaxial line outer core and a coaxial line inner core; the coaxial line outer core is welded with the microstrip line feed unit 92 on the back of the dielectric substrate 10; the coaxial line inner core is welded with the microstrip line feed unit 91 through the non-metalized via hole of the dielectric substrate 10.
3/4 feed square loop 4 includes a first 3/4 feed square loop and a second 3/4 feed square loop; the 3/4 feeding square ring is a 3/4 feeding square ring which is used for connecting the crossed dipole radiation units for feeding after cutting 1/4 of the square ring.
As shown in fig. 2b, the crossed dipole radiation unit 1 comprises a pair of crossed dipoles, and the crossed dipole comprises a first crossed dipole radiation unit 11 and a second crossed dipole radiation unit 12; the first cross dipole radiation unit 11 and the second cross dipole radiation unit 12 are respectively etched on the front surface and the back surface of the medium base 10 and are symmetrically distributed; basic units of the first cross dipole radiation unit 11 and the second cross dipole radiation unit 12 are butterfly units with two orthogonal arms; the two arms of the butterfly-shaped unit are both trapezoidal, and the bottom edge of the trapezoid is connected with a semicircle with the bottom edge of the trapezoid as the diameter; two arms of the butterfly-shaped unit of the first cross dipole radiation unit 11 are connected through a first 3/4 feeding square ring, and two arms of the butterfly-shaped unit of the second cross dipole radiation unit 12 are connected through a second 3/4 feeding square ring; a first groove 111 and a second groove 112 are symmetrically arranged on the outer side of the connection position of the butterfly-shaped unit of the first cross dipole radiation unit 11 and the first 3/4 power feeding square ring on the front surface; a third groove 113 and a fourth groove 114 are arranged outside the butterfly-shaped unit of the second cross dipole radiation unit 12 and the second 3/4 power feeding square ring on the back surface; the first groove 111 and the second groove are symmetrical 112; the third groove 113 and the fourth groove 114 are symmetrical.
As shown in fig. 4, the side length L of the dielectric substrate 10 is 60 mm; the first parasitic radiation element 22 is a microstrip line with a width Ly2 of 0.5mm and a length Lx2 of 19 mm; the second parasitic radiation element 23 and the third parasitic radiation element 24 are microstrip lines each having a width Ly1 of 0.5mm and a length Lx1 of 18.5 mm.
The upper bottom side length W1 of the trapezoid of the butterfly-shaped unit of the first cross-dipole radiation unit 11 and the second cross-dipole radiation unit 12 is 2.4mm, the lower bottom side length W2 is 17.4mm, the height L2 is 8.9mm, and the diameter of the semicircle is W2 is 17.4 mm.
The side length Ringp of the microstrip line feed unit 9 is 2.8 mm; the length Sx of the groove 11 is 1.6mm, and the width Sy is 0.2 mm; 3/4 the length Ringl of the outer edge of the square ring 4 is 5.8mm, 3/4 the width Ringw of the square ring 4 is 0.7 mm.
The parasitic radiation unit 2 comprises a first parasitic radiation unit 21, a second parasitic radiation unit 22 and a third parasitic radiation unit 23; the first parasitic radiation unit 21 includes four rectangular patch units, the second parasitic radiation unit 22 includes four rectangular patch units, and the third parasitic radiation unit 23 includes four rectangular patch units; the first parasitic radiation unit 21 is etched on the front surface of the dielectric substrate 10, the second parasitic radiation unit is etched on the front surface of the dielectric substrate 10, and the third radiation unit is etched on the back surface of the dielectric substrate 10.
The patch capacitor 3 comprises a first patch capacitor 31 and a second patch capacitor 32; the first patch capacitor 31 is embedded in a slot in the middle of a first 3/4 feeding square ring on the front surface of the dielectric substrate 10; the second patch capacitor 32 is embedded in the middle slot of the second 3/4 feeding square ring on the back surface of the dielectric substrate 10; the coaxial feeder unit 6 is perpendicular to the dielectric substrate 10.
The PIN diode switch 8 comprises a first PIN diode switch 81, a second PIN diode switch 82, a third PIN diode switch 83 and a fourth PIN diode switch 84; the first PIN diode switch 81 and the second PIN diode switch 82 are placed in a gap between the first microstrip line feed unit 91 and the first cross dipole radiation unit 11; two poles of the first PIN diode switch 81 are respectively welded with the first microstrip line feed unit 91 and the first cross dipole radiation unit 11; two poles of the second PIN diode switch 82 are respectively welded with the first microstrip line feed unit 91 and the first cross dipole radiation unit 11; the third PIN diode switch 83 and the fourth PIN diode switch 84 are disposed in a gap between the second microstrip line feed unit 92 and the second cross dipole radiation unit 12; the two poles of the third PIN diode switch 83 are respectively welded with the first microstrip line feed unit 92 and the first crossed dipole radiation unit 12; the two poles of the fourth PIN diode switch 84 are respectively welded with the first microstrip line feed unit 92 and the first cross dipole radiation unit 12;
as shown in fig. 5, the PIN diode switch bias circuit mainly comprises an inductor, a resistor and a direct current power supply, and is located on a single circuit board, wherein the direct current power supply V2, the resistor R1, the inductor L2, the PIN diode switch, the inductor L1 and the direct current power supply V1 are sequentially connected, the inductor L1 is L2 is 240nH, the inductor plays a role of passing direct current and flowing resistance, the resistor R1 is 200 Ω and plays a role of limiting current, the direct current power supply V1 is grounded, and the direct current power supply V2 is connected with a 3V direct current power supply; fig. 6 shows an equivalent circuit of the PIN diode switch 8 in the off state, where an equivalent capacitance C1 is 7000pF, an equivalent inductance L4 is 0.6nH, and an equivalent resistance R3 is 3000 Ω; fig. 7 shows an equivalent circuit of the PIN diode switch 8 in the on state, where the equivalent inductance L3 is 0.6nH and the equivalent resistance R2 is 2.1 Ω.
The reconfigurable antenna polarization mode is realized through the state of the PIN diode switch; when the antenna is in an LHCP mode of operation, see Table 1, a graph of the change of the reflection coefficient S11 of the antenna along with the change of Frequency is shown in FIG. 8, and the impedance bandwidth is 78.9 percent, 1.65 GHz-3.8 GHz; the curve graph of the change of the axial ratio AR of the antenna along with the change of the Frequency is shown in FIG. 9, and the axial ratio bandwidth is 50.7 percent, 2.35 GHz-3.95 GHz; the graph of the Gain of the antenna as a function of Frequency is shown in fig. 10; the xoz plane pattern at 2.7GHz is shown in FIG. 11, and the yoz plane pattern at 2.7GHz is shown in FIG. 12; the xoz pattern at 3.3GHz is shown in FIG. 13, and the yoz pattern at 3.3GHz is shown in FIG. 14.
When the antenna is in the RHCP mode, see table 1, a graph of the change of the reflection coefficient S11 of the antenna along with the change of the Frequency is shown in fig. 15, and the impedance bandwidth of the antenna is 78.9% 1.65 GHz-3.8 GHz; the curve graph of the change of the axial ratio AR of the antenna along with the change of the Frequency is shown in FIG. 16, and the axial ratio bandwidth is 59.7 percent and ranges from 2.35GHz to 4.35 GHz; a graph of the Gain of the antenna as a function of Frequency is shown in fig. 17; the xoz plane pattern at 2.7GHz is shown in FIG. 18, and the yoz plane pattern at 2.7GHz is shown in FIG. 19; the xoz plane pattern at 3.3GHz is shown in FIG. 20, and the yoz plane pattern at 3.3GHz is shown in FIG. 21.
When the antenna is in the working LP mode, see Table 1, the curve graph of the reflection coefficient S11 of the antenna changing along with the change of the Frequency is shown in FIG. 22, and the impedance bandwidth is 60% 2.1 GHz-3.9 GHz; a graph of the Gain of the antenna as a function of Frequency is shown in fig. 23; the pattern at 2.7GHz is shown in figure 24; the xoz plane pattern at 3.3GHz is shown in figure 25.
TABLE 1 different modes of operation of the antenna
Compared with the traditional polarization reconfigurable antenna, the broadband polarization reconfigurable antenna based on the cross dipole and the parasitic unit has the characteristics of ultra-wide bandwidth, stable gain, stable directional diagram, small volume, planarization and simple structure, can realize three modes of polarization reconfigurable working modes by only using 4 switches, has impedance bandwidth of more than 60 percent in the three working modes, has the characteristics of the embodiment of the invention that the ultra-wide bandwidth is increased by more than 8.5dBi on average in the working bandwidth, the peak gain is 9.5dBi, and the directional diagram is stable; in addition, the microwave switch adopts the PIN diode as the microwave switch, and the PIN diode has the advantages of high response frequency, high response speed, stable work, simple realization and the like, greatly improves the capacity, safety and accuracy of the system, and has wide application prospect.
The three working modes jointly cover a 2.35-3.8 GHz frequency band, and the wireless mobile communication is widely applied in the operable frequency band range at present, wherein the wireless mobile communication comprises 2.45G WiFi, fourth generation mobile communication Lte 4G and fifth generation mobile communication (5G).
The above embodiments are preferred embodiments of the present invention, but the present invention is not limited to the above embodiments, and any other changes, modifications, substitutions, combinations, and simplifications which do not depart from the spirit and principle of the present invention should be construed as equivalents thereof, and all such changes, modifications, substitutions, combinations, and simplifications are intended to be included in the scope of the present invention.
Claims (10)
1. A broadband polarization reconfigurable antenna based on a cross dipole and a parasitic element is characterized by comprising a cross dipole radiation element (1), a parasitic radiation element (2), a patch capacitor (3), an 3/4 feeding square ring (4), an insulating support column (5), a coaxial feeder line element (6), a reflecting plate (7), a PIN diode switch (8), a microstrip line feeding element (9) and a dielectric substrate (10);
the cross dipole radiation unit (1), the parasitic radiation unit (2), the 3/4 feed square ring (4) and the microstrip line feed unit (9) are etched on the surface of the dielectric substrate (10); the patch capacitor (3) is embedded on the surface of the dielectric substrate (10);
the PIN diode switch (8) is connected with the microstrip line feed unit (9); the 3/4 feeding square ring (4) is connected with the crossed dipole radiation unit (1);
the coaxial feeder line unit (6) is vertical to the dielectric substrate (10); the coaxial feeder unit (6) is positioned at the geometric center of the dielectric substrate (10); the coaxial feeder unit (6) is connected with the microstrip line feed unit (9);
the dielectric substrate (10) is fixed on the reflecting plate (7) through the insulating support column (5).
2. The cross-dipole and parasitic element based broadband polarization reconfigurable antenna of claim 1, characterized in that the microstrip line feed element (9) comprises a first microstrip line feed element (91) and a second microstrip line feed element (92); the first microstrip line feed unit (91) is etched on the front surface of the dielectric substrate (10); the second microstrip line feed unit (92) is etched on the back of the dielectric substrate (10);
the coaxial feeder unit (6) comprises a soft coaxial line, and the soft coaxial line comprises a coaxial line outer core and a coaxial line inner core; the coaxial line outer core is connected with a microstrip line feed unit (92); the coaxial line inner core passes through the non-metalized via hole of the dielectric substrate (10) and is connected with the microstrip line feed unit (91);
3/4 feeding square ring (4) comprises a first 3/4 feeding square ring and a second 3/4 feeding square ring;
the cross dipole radiation unit (1) comprises a pair of cross dipoles, and the cross dipoles comprise a first cross dipole radiation unit (11) and a second cross dipole radiation unit (12); the first cross dipole radiation unit (11) and the second cross dipole radiation unit (12) are etched on the front surface and the back surface of the medium base (10) respectively; basic units of the first cross dipole radiation unit (11) and the second cross dipole radiation unit (12) are butterfly units with two orthogonal arms, the two arms of the butterfly unit of the first cross dipole radiation unit (11) are connected through a first 3/4 feeding square ring, and the two arms of the butterfly unit of the second cross dipole radiation unit (12) are connected through a second 3/4 feeding square ring; a first groove (111) and a second groove (112) are symmetrically arranged on the outer side of the connection position of the butterfly-shaped unit of the first cross dipole radiation unit (11) and the first 3/4 power feeding square ring on the front side; a third groove (113) and a fourth groove (114) are formed outside the butterfly-shaped unit of the second cross dipole radiation unit (12) and the second 3/4 power feeding square ring on the back surface; the first groove (111) and the second groove are symmetrical (112); the third groove (113) and the fourth groove (114) are symmetrical;
the parasitic radiation unit (2) comprises a first parasitic radiation unit (21), a second parasitic radiation unit (22) and a third parasitic radiation unit (23); the first parasitic radiation unit (21), the second parasitic radiation unit (22) and the third parasitic radiation unit (23) comprise four rectangular patch units; the first parasitic radiation unit (21) is etched on the front surface of the dielectric substrate (10), the second parasitic radiation unit is etched on the front surface of the dielectric substrate (10), and the third radiation unit is etched on the back surface of the dielectric substrate (10);
the PIN diode switch (8) comprises a first PIN diode switch (81), a second PIN diode switch (82), a third PIN diode switch (83) and a fourth PIN diode switch (84); the first PIN diode switch (81) and the second PIN diode switch (82) are arranged in a gap between the first microstrip line feed unit (91) and the first cross dipole radiation unit (11); the two poles of the first PIN diode switch (81) are respectively connected with the first microstrip line feed unit (91) and the first crossed dipole radiation unit (11); the two poles of the second PIN diode switch (82) are respectively connected with the first microstrip line feed unit (91) and the first crossed dipole radiation unit (11); the third PIN diode switch (83) and the fourth PIN diode switch (84) are arranged in a gap between the second microstrip line feed unit (92) and the second crossed dipole radiation unit (12); the two poles of the third PIN diode switch (83) are respectively connected with the first microstrip line feed unit (92) and the first crossed dipole radiation unit (12); the two poles of the fourth PIN diode switch (84) are respectively connected with the first microstrip line feed unit (92) and the first crossed dipole radiation unit (12);
the patch capacitor (3) comprises a first patch capacitor (31) and a second patch capacitor (32); the first patch capacitor (31) is embedded in a slot in the middle of a first 3/4 feeding square ring on the front surface of the dielectric substrate (10); the second patch capacitor (32) is embedded in a middle slit of a second 3/4 feeding square ring on the back surface of the dielectric substrate (10).
3. The broadband polarization reconfigurable antenna based on cross dipoles and parasitic elements according to claim 1, characterized in that the characteristic impedance of the microstrip line feed element (9) is 40-60 Ω.
4. The broadband polarization reconfigurable antenna based on the cross dipole and the parasitic element as claimed in claim 1, wherein a gap between two arms of each butterfly element and four rectangular patch elements of the first parasitic radiation element (21) are respectively arranged between the two butterfly elements; four rectangular patch units of the second parasitic radiation unit (22) are etched on the edge of the front surface of the dielectric substrate (10), and the long sides of the four rectangular patch units are perpendicular to the side of the dielectric substrate (10); four rectangular patch units of the third radiation unit (23) are etched on the back of the dielectric substrate (10), and the long sides of the four rectangular patch units are perpendicular to the sides of the dielectric substrate (10).
5. The broadband polarization reconfigurable antenna based on the cross dipoles and the parasitic elements as claimed in claim 1, wherein the first cross dipole radiating elements (11) and the second cross dipole radiating elements (12) are symmetrically distributed on the front surface and the back surface of the dielectric substrate (10).
6. The broadband polarization reconfigurable antenna based on crossed dipoles and parasitic elements according to claim 1, characterized in that the SMA joints of the coaxial lines are located right below the reflector plate (7).
7. The broadband polarization reconfigurable antenna based on cross dipoles and parasitic elements according to claim 1, characterized in that the dielectric substrate (10) is a high-frequency board FR-4.
8. The broadband polarization reconfigurable antenna based on the cross dipole and the parasitic element as claimed in claim 1, characterized in that the reflector plate (7) is a square topless box, and the box is a copper plate with the thickness of 1 mm.
9. The broadband polarization reconfigurable antenna based on cross dipoles and parasitic elements according to claim 1, characterized in that the first PIN diode switch (81) and the second PIN diode switch (82) are symmetrical; the third PIN diode switch (83) and the fourth PIN diode switch (84) are symmetrical.
10. The broadband polarization reconfigurable antenna based on the cross dipole and the parasitic element as claimed in claim 1, wherein each arm of the butterfly element comprises a trapezoid and a semicircle with the lower bottom of the trapezoid as a radius, the semicircle is connected with the lower bottom of the trapezoid, and the upper bottom of the trapezoid is connected with 3/4 feeding square loops (4).
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111244630A (en) * | 2020-01-13 | 2020-06-05 | 常熟市泓博通讯技术股份有限公司 | Switchable antenna module |
| CN111430895A (en) * | 2020-04-02 | 2020-07-17 | 哈尔滨工程大学 | Broadband wide axial ratio beam cross dipole antenna |
| CN112201934A (en) * | 2020-09-23 | 2021-01-08 | 华中科技大学 | Dual-frequency antenna and antenna array |
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| CN212011260U (en) * | 2019-09-28 | 2020-11-24 | 华南理工大学 | Broadband polarization reconfigurable antenna based on crossed dipoles and parasitic units |
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| CN212011260U (en) * | 2019-09-28 | 2020-11-24 | 华南理工大学 | Broadband polarization reconfigurable antenna based on crossed dipoles and parasitic units |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111244630A (en) * | 2020-01-13 | 2020-06-05 | 常熟市泓博通讯技术股份有限公司 | Switchable antenna module |
| CN111430895A (en) * | 2020-04-02 | 2020-07-17 | 哈尔滨工程大学 | Broadband wide axial ratio beam cross dipole antenna |
| CN111430895B (en) * | 2020-04-02 | 2022-04-05 | 哈尔滨工程大学 | Broadband wide axial ratio beam cross dipole antenna |
| CN112201934A (en) * | 2020-09-23 | 2021-01-08 | 华中科技大学 | Dual-frequency antenna and antenna array |
| CN112201934B (en) * | 2020-09-23 | 2021-10-08 | 华中科技大学 | Dual-frequency antenna and antenna array |
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| CN110600876B (en) | 2024-05-31 |
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