CN110501870B - 一种光学邻近效应修正方法 - Google Patents
一种光学邻近效应修正方法 Download PDFInfo
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- CN110501870B CN110501870B CN201910797126.9A CN201910797126A CN110501870B CN 110501870 B CN110501870 B CN 110501870B CN 201910797126 A CN201910797126 A CN 201910797126A CN 110501870 B CN110501870 B CN 110501870B
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- 238000012937 correction Methods 0.000 title claims abstract description 63
- 238000000034 method Methods 0.000 title claims abstract description 34
- 230000003287 optical effect Effects 0.000 title claims abstract description 23
- 230000000694 effects Effects 0.000 title claims abstract description 11
- 238000012216 screening Methods 0.000 claims abstract description 11
- 238000004364 calculation method Methods 0.000 claims abstract description 4
- 239000012634 fragment Substances 0.000 claims description 8
- 238000004088 simulation Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
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Abstract
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Priority Applications (1)
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CN201910797126.9A CN110501870B (zh) | 2019-08-27 | 2019-08-27 | 一种光学邻近效应修正方法 |
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CN201910797126.9A CN110501870B (zh) | 2019-08-27 | 2019-08-27 | 一种光学邻近效应修正方法 |
Publications (2)
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CN110501870A CN110501870A (zh) | 2019-11-26 |
CN110501870B true CN110501870B (zh) | 2024-03-15 |
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CN201910797126.9A Active CN110501870B (zh) | 2019-08-27 | 2019-08-27 | 一种光学邻近效应修正方法 |
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Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN112946994B (zh) * | 2019-12-10 | 2022-12-16 | 中芯国际集成电路制造(北京)有限公司 | 光学邻近修正方法及掩膜版的制作方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102073210A (zh) * | 2009-11-20 | 2011-05-25 | 无锡华润上华半导体有限公司 | 二维设计图形曝光后形变效应补偿方法 |
US8578303B1 (en) * | 2012-07-06 | 2013-11-05 | National Taiwan University | Method for compensating effect of patterning process and apparatus thereof |
CN106483758A (zh) * | 2015-09-02 | 2017-03-08 | 无锡华润上华半导体有限公司 | 光学邻近效应修正方法和*** |
CN108073047A (zh) * | 2016-11-15 | 2018-05-25 | 无锡华润上华科技有限公司 | 光学临近效应校正方法及*** |
CN109254494A (zh) * | 2017-07-12 | 2019-01-22 | 中芯国际集成电路制造(上海)有限公司 | 一种光学邻近修正方法 |
CN110007554A (zh) * | 2018-01-05 | 2019-07-12 | 中芯国际集成电路制造(上海)有限公司 | 光学邻近修正方法及掩膜版的制作方法 |
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2019
- 2019-08-27 CN CN201910797126.9A patent/CN110501870B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102073210A (zh) * | 2009-11-20 | 2011-05-25 | 无锡华润上华半导体有限公司 | 二维设计图形曝光后形变效应补偿方法 |
US8578303B1 (en) * | 2012-07-06 | 2013-11-05 | National Taiwan University | Method for compensating effect of patterning process and apparatus thereof |
CN106483758A (zh) * | 2015-09-02 | 2017-03-08 | 无锡华润上华半导体有限公司 | 光学邻近效应修正方法和*** |
CN108073047A (zh) * | 2016-11-15 | 2018-05-25 | 无锡华润上华科技有限公司 | 光学临近效应校正方法及*** |
CN109254494A (zh) * | 2017-07-12 | 2019-01-22 | 中芯国际集成电路制造(上海)有限公司 | 一种光学邻近修正方法 |
CN110007554A (zh) * | 2018-01-05 | 2019-07-12 | 中芯国际集成电路制造(上海)有限公司 | 光学邻近修正方法及掩膜版的制作方法 |
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Effective date of registration: 20221223 Address after: 223001 Room 318, Building 6, east of Zhenda Steel Pipe Company, south of Qianjiang Road, Huaiyin District, Huai'an City, Jiangsu Province Applicant after: Huaian Xide Industrial Design Co.,Ltd. Address before: 223300 no.599, East Changjiang Road, Huaiyin District, Huai'an City, Jiangsu Province Applicant before: HUAIAN IMAGING DEVICE MANUFACTURER Corp. |
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Effective date of registration: 20240313 Address after: B1101, No. 150, Shangzao Building, Gaofeng Community, Dalang Street, Longhua District, Shenzhen, Guangdong 518000 Applicant after: Shenzhen Litong Zhiyuan Technology Transfer Center Co.,Ltd. Country or region after: China Address before: 223001 Room 318, Building 6, east of Zhenda Steel Pipe Company, south of Qianjiang Road, Huaiyin District, Huai'an City, Jiangsu Province Applicant before: Huaian Xide Industrial Design Co.,Ltd. Country or region before: China |