CN110323303B - 一种Ga2O3-CuSCN核壳异质结日盲紫外探测器及其制备方法 - Google Patents
一种Ga2O3-CuSCN核壳异质结日盲紫外探测器及其制备方法 Download PDFInfo
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
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- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
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CN201910612898.0A CN110323303B (zh) | 2019-07-09 | 2019-07-09 | 一种Ga2O3-CuSCN核壳异质结日盲紫外探测器及其制备方法 |
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CN105932104A (zh) * | 2016-05-23 | 2016-09-07 | 中国科学院长春光学精密机械与物理研究所 | 一种氧化镓日盲紫外探测器及其制备方法 |
CN106796991A (zh) * | 2014-10-14 | 2017-05-31 | 积水化学工业株式会社 | 太阳能电池 |
CN109461790A (zh) * | 2018-09-26 | 2019-03-12 | 北京镓族科技有限公司 | 氧化镓/石墨烯异质结零功耗光电探测器及其制造方法 |
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KR101381317B1 (ko) * | 2012-01-26 | 2014-04-04 | 인하대학교 산학협력단 | 코어-쉘 구조의 산화갈륨-산화아연 나노로드, 이의 제조방법 및 이를 이용한 가스센서 |
CN106206952B (zh) * | 2012-09-18 | 2019-09-06 | 牛津大学科技创新有限公司 | 光电器件 |
CN104362197B (zh) * | 2014-10-23 | 2016-09-14 | 上海工程技术大学 | 一种立体采光式全固态太阳能电池及其制备方法 |
CN106549079A (zh) * | 2016-09-30 | 2017-03-29 | 大连民族大学 | 一种紫外光探测器及其制备方法 |
CN108265275B (zh) * | 2018-01-22 | 2020-02-18 | 东南大学 | 一种ZnO-Ga2O3核壳纳米线的制备方法 |
CN109888109B (zh) * | 2019-03-13 | 2021-02-09 | 电子科技大学 | 量子点修饰的双体异质结有机太阳能电池及其制备方法 |
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CN106796991A (zh) * | 2014-10-14 | 2017-05-31 | 积水化学工业株式会社 | 太阳能电池 |
CN105932104A (zh) * | 2016-05-23 | 2016-09-07 | 中国科学院长春光学精密机械与物理研究所 | 一种氧化镓日盲紫外探测器及其制备方法 |
CN109461790A (zh) * | 2018-09-26 | 2019-03-12 | 北京镓族科技有限公司 | 氧化镓/石墨烯异质结零功耗光电探测器及其制造方法 |
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