CN109888081A - A kind of full-inorganic ultraviolet LED wafer-level packaging method - Google Patents
A kind of full-inorganic ultraviolet LED wafer-level packaging method Download PDFInfo
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- CN109888081A CN109888081A CN201910162740.8A CN201910162740A CN109888081A CN 109888081 A CN109888081 A CN 109888081A CN 201910162740 A CN201910162740 A CN 201910162740A CN 109888081 A CN109888081 A CN 109888081A
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Abstract
The invention belongs to semiconductor processing technology related fieldss, and disclose a kind of full-inorganic ultraviolet LED wafer-level packaging method, comprising: form multiple glass paste rings on glass cover-plate by printing or 3D printing technique first, and multiple glass chamber structures are obtained by low-temperature sintering, then more UV LED chips are mounted on heat-radiating substrate, then by inorganic slurry or brazing metal by glass chamber and heat-radiating substrate realization reliable bond on glass cover-plate, finally cutting obtains full-inorganic ultraviolet LED encapsulating products.The invention also discloses corresponding ultraviolet LED encapsulating structures.Through the invention, the problems such as effectively preventing ultraviolet ageing, the failure of organic packaging materials, improves uv-LED device long-term reliability, and improves ultraviolet LED encapsulation integrated level, reduces packaging cost.
Description
Technical field
The invention belongs to semiconductor processing technology related fieldss, more particularly, to a kind of full-inorganic ultraviolet LED wafer scale
Packaging method.
Background technique
Relative to traditional UV sources such as mercury lamps, ultraviolet LED have mercury-free environmental protection, low-power consumption, wavelength controllably etc. it is many excellent
Gesture.Ultraviolet LED can be divided into shallow ultraviolet LED (> 300nm) and deep ultraviolet LED (≤300nm) according to emission wavelength difference.
Currently, shallow ultraviolet LED in ink printing, resin solidification and examines the fields such as identification to be applied widely, and with purple
Outer LED technology development, deep ultraviolet LED will possess wide in fields such as sterilizing, Water warfare, medical and beauty treatment and biochemistry detections
Application prospect.
LED encapsulation is to realize that LED by the important link of chip to product, plays mechanical support, is environmentally isolated, is electric mutual
Even, heat dissipation and the effect of light out, directly decide ultraviolet LED light extraction efficiency and reliability.Since ultraviolet LED emission wavelength is short
And energy is high, traditional organic packaging materials (silica gel, epoxy resin etc.) will appear aging and yellow under ultraviolet radiation, cause
The problems such as decline of encapsulating material transmitance, bonding failure, seriously affect ultraviolet LED performance and long-term reliability.For this purpose, researcher
Start to encapsulate ultraviolet LED using inorganic material such as glass, ceramics, to avoid ultraviolet ageing problem.But it is existing ultraviolet
LED packaging technology is still to implement the techniques such as patch, routing, glass cover-plate bonding respectively to UV LED chip, and processing step is more,
Process integration is low, and packaging cost is high, is accordingly difficult to meet ultraviolet LED modernization package requirements.Correspondingly, it is necessary to which exploitation is new
The ultraviolet LED wafer-level packaging method of type especially solves ultraviolet LED preferably to meet integrated ultraviolet LED package requirements
The above technical problem present in encapsulation process.
Summary of the invention
Aiming at the above defects or improvement requirements of the prior art, the present invention provides a kind of full-inorganic ultraviolet LED wafer scales
Packaging method, wherein by directly making glass chamber on glass cover-plate, and using inorganic slurry or brazing metal come complete
At the reliable bond between glass chamber and heat-radiating substrate, realizes ultraviolet LED full-inorganic sealing structure, not only effectively avoid organic material
Expect all kinds of problems caused by ultraviolet ageing, improves ultraviolet LED long-term reliability, and improve purple using wafer-level packaging technique
Outer LED encapsulates integrated level, reduces packaging cost.
Correspondingly, according to one aspect of the present invention, a kind of full-inorganic ultraviolet LED wafer-level packaging method is provided,
It is characterized in that, this method includes the following steps:
(i) the glass cover-plate preparation containing glass chamber: plane quartz glass plate is chosen as glass cover-plate, passes through 3D printing
Technology prints multiple glass paste rings on glass cover-plate, then the glass cover-plate is placed in high temperature furnace and is sintered, by
This forms multiple glass chamber structures on glass cover-plate；In addition, the glass paste is the mixed of glass powder, ceramic powder and binder
Close object, component set as follows: glass powder select glass transition temperature be lower than 600 DEG C low melting point glass material and its volume as
The 60%~80% of slurry total weight, ceramic powder selective oxidation aluminum material and its volume are the 10%~30% of slurry total weight,
And glass powder and ceramic powder partial size are 1~10 μm, binder is selected as the mixture of ethyl cellulose and terpinol, and its volume
Respectively the 1%~5% and 5%~30% of slurry total weight；
(ii) inorganic slurry is evenly applied to the glass chamber upper end of glass cover-plate, to obtain inorganic slurry in homogeneous thickness
The bed of material is as adhesive layer；
(iii) more UV LED chips are mounted on the metal layer of heat-radiating substrate, complete die bond, routing or eutectic mistake
Journey；
(iv) inorganic slurry layer on the glass chamber of glass cover-plate is directed at pressurization with heat-radiating substrate, so that ultraviolet LED core
Piece is located in glass chamber, and completes to be bonded by low-temperature setting, realizes ultraviolet LED sealing structure；
(v) ultraviolet LED for being formed with sealing structure by step (iv) encapsulation wafer is subjected to cutting fragment, obtained complete
Inorganic UV LED encapsulating products.
As it is further preferred that the inorganic slurry material is aluminosilicate, magnesium phosphate, aluminic acid in step (ii)
The systems such as calcium, solidification temperature are 90~150 DEG C, and curing time is 1~3h, and inorganic slurry layer is with a thickness of 50~200 μm.
It is another aspect of this invention to provide that another full-inorganic ultraviolet LED wafer-level packaging method is additionally provided, it is special
Sign is that this method includes the following steps:
(a) the glass cover-plate preparation containing glass chamber: plane quartz glass plate is chosen as glass cover-plate, passes through screen printing
Brush technology prints out multiple glass paste rings on glass cover-plate, then the glass cover-plate is placed in high temperature furnace and is sintered,
Thus multiple glass chamber structures are formed on glass cover-plate；In addition, the glass paste is glass powder, ceramic powder and binder
Mixture, component setting are as follows: glass powder selects low melting point glass material and its volume of the glass transition temperature lower than 600 DEG C
Be the 60%~80% of slurry total weight, ceramic powder selective oxidation aluminum material and its volume be slurry total weight 10%~
30%, and glass powder and ceramic powder partial size are 1~10 μm, binder is selected as the mixture of ethyl cellulose and terpinol, and
Its volume is respectively the 1%~4% and 5%~20% of slurry total weight；
(b) metal layer is formed in the glass chamber upper end of glass cover-plate again, for the metal welding between heat-radiating substrate；
(c) more UV LED chips are mounted on heat-radiating substrate, and chip surrounding forms metal on heat-radiating substrate
Layer, then on the metal layer coated with solder or compacting weld tabs as solder layer；
(d) the glass chamber upper end metal layer of glass cover-plate is directed at pressurization with the solder layer on heat-radiating substrate, so that purple
Outer LED chip realizes solder layer fusing in glass chamber, and by whole heating or local heating technology, to form purple
Outer LED sealing structure；
(e) ultraviolet LED for being formed with sealing structure by step (d) encapsulation wafer is subjected to cutting fragment, obtained complete
Inorganic UV LED encapsulating products.
As it is further preferred that the glass paste ring is realized by multiple silk-screen printing, often in step (a)
It is secondary be completed for printing after 30min or more need to be dried at 200 DEG C.
As it is further preferred that the metal layer of glass chamber upper end is by coating and low-temperature sintering in step (b)
Nano silver paste is made, and sintering temperature is lower than 400 DEG C, and metal layer thickness is 5~30 μm；
As it is further preferred that coated with solder or weld tabs are the alloy materials such as golden tin, copper and tin, tin silver copper in step (c)
Material, solder layer are 100~500 μm；
As it is further preferred that the sintering process is dry 1 first at 200~300 DEG C in step (i) and (a)
~3h then heats to 20~60min of heat preservation at 500~800 DEG C, and finally anneal at 250~350 DEG C 30min or more.
As it is further preferred that in step (i) and (a), the glass chamber height made on glass cover-plate is 0.5~
2mm, shape are circle, square, rectangle etc..
Another aspect according to the invention additionally provides corresponding full-inorganic ultraviolet LED encapsulating products.
In general, contemplated above technical scheme and existing all kinds of ultraviolet LED encapsulation manufacture work through the invention
Skill is compared, on the one hand, by using full-inorganic material package, can meet ultraviolet LED long-term reliability requirement well；Another party
Face by utilizing Wafer level packaging, and optimizes its critical craft, can be realized ultraviolet LED wafer scale envelope
Dress is remarkably improved ultraviolet LED encapsulation integrated level, reduces packaging cost.
Detailed description of the invention
Fig. 1 is the technique stream according to full-inorganic ultraviolet LED wafer-level packaging method constructed by a preferred embodiment
Cheng Tu；
Fig. 2 is according to full-inorganic ultraviolet LED wafer-level packaging method constructed by another preferred embodiment of the present invention
Process flow chart.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.As long as in addition, technical characteristic involved in the various embodiments of the present invention described below
Not constituting a conflict with each other can be combined with each other.
For the above defects or improvement requirements of conventional LED package technology, the main purpose of the present invention is to provide one kind
Full-inorganic ultraviolet LED wafer-level packaging method encapsulates existing organic material ultraviolet ageing to solve current ultraviolet LED, loses
The problems such as effect, while ultraviolet LED encapsulation integrated level is significantly improved, reduce packaging cost.
Some specific embodiments are given below, process flow of the invention and important machine is explained in detail so as to apparent
Reason and critical craft.
Embodiment 1
Referring to Fig. 1, the embodiment 1 provides a kind of full-inorganic ultraviolet LED wafer-level packaging method, it can as demonstration
The following steps are included:
Step 1, glass paste is prepared first, and glass powder, ceramic powder and binder are mixed and be sufficiently stirred, component setting
As follows: it is the 70% of slurry total weight that glass powder, which selects low melting point borosilicate glass and its volume, ceramic powder selective oxidation aluminium
Material and its volume are the 20% of slurry total weight, and glass powder and ceramic powder partial size are 5~10 μm, and binder is selected as ethyl
The mixture of cellulose and terpinol, and its volume is respectively the 2% and 8% of slurry total weight；Then it chooses with a thickness of 0.5mm
Quartz glass plate prints multiple circular glass slurries by 3D printing technique as glass cover-plate 11 on glass cover-plate 11
Ring, then the glass cover-plate 11 is placed in high temperature furnace, dry 2h, then heats at 700 DEG C and keeps the temperature first at 250 DEG C
30min, finally anneal at 300 DEG C 1h, multiple glass chambers 12 is thus formed on glass cover-plate 11, and height is 1mm；
Step 2, aluminosilicate inorganic slurry is evenly applied to the glass chamber upper end of glass cover-plate, it is uniform to obtain thickness
Inorganic slurry layer as adhesive layer 13, with a thickness of 100 μm；
Step 3, using ceramic substrate as heat-radiating substrate 15, using eutectic machine by more 14 eutectics of upside-down mounting UV LED chip
It is bonded on the respective lines layer of heat-radiating substrate 15；
Step 4, the glass chamber 12 of glass cover-plate 11 and UV LED chip 14 on ceramic substrate are corresponded, so that
UV LED chip 14 is located in glass chamber 12, and solidifies 2h at a temperature of 100 DEG C by adhesive layer 13 and complete bonding, realizes
Ultraviolet LED sealing structure；
Step 5, the ultraviolet LED for being formed with sealing structure encapsulation wafer is subjected to cutting fragment using cutting machine, obtained
Full-inorganic ultraviolet LED encapsulating products 16.
Embodiment 2
Referring to Fig. 2, the embodiment 2 provides a kind of full-inorganic ultraviolet LED wafer-level packaging method, it can as demonstration
The following steps are included:
Step 1, glass paste is prepared first, and glass powder, ceramic powder and binder are mixed and be sufficiently stirred, component setting
As follows: it is the 65% of slurry total weight that glass powder, which selects low melting point borosilicate glass and its volume, ceramic powder selective oxidation aluminium
Material and its volume are the 20% of slurry total weight, and glass powder and ceramic powder partial size are 5~10 μm, and binder is selected as ethyl
The mixture of cellulose and terpinol, and its volume is respectively the 5% and 10% of slurry total weight；Then choose with a thickness of
0.5mm quartz glass plate prints out square glass as glass cover-plate 21, by being repeatedly screen printed on glass cover-plate 21
Slurry ring dries 30min after printing every time at 200 DEG C, then the glass cover-plate 21 is placed in high temperature furnace, first 300
Dry 2h, then heats at 750 DEG C and keeps the temperature 40min, finally anneal at 350 DEG C 2h, thus on glass cover-plate 21 at DEG C
Multiple glass chambers 22 are formed, and height is 0.6mm；
Step 2, then in the coating of 22 upper end of glass chamber of glass cover-plate 21 and low-temperature sintering nano silver paste, sintering temperature
300 DEG C, time 20min, to form sintering silver layer as welding metal layer 23, with a thickness of 20 μm；
Step 3, Ceramics substrate by die bond and beats more formal dress UV LED chips 24 as heat-radiating substrate 25
Wiring technology is mounted on heat-radiating substrate 25, and chip surrounding is formed with metal layer 26 on heat-radiating substrate 25, then in metal layer 26
The golden tin solder of upper coating is as solder layer 27, with a thickness of 200 μm；
Step 4,22 upper end metal layer 23 of the glass chamber of glass cover-plate 21 and the solder layer 26 on heat-radiating substrate 25 is right
Quasi- pressurization so that UV LED chip 24 is located in glass chamber 22, and realizes that solder layer 27 is molten by induction local heating technology
Change, to form ultraviolet LED sealing structure；
Step 5, the ultraviolet LED for being formed with sealing structure encapsulation wafer is subjected to cutting fragment using cutting machine, obtained
Full-inorganic ultraviolet LED encapsulating products 28.
As it will be easily appreciated by one skilled in the art that the foregoing is merely illustrative of the preferred embodiments of the present invention, not to
The limitation present invention, any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should all include
Within protection scope of the present invention.
Claims (8)
1. a kind of full-inorganic ultraviolet LED wafer-level packaging method, which is characterized in that this method includes the following steps:
(a) the glass cover-plate preparation containing glass chamber: plane quartz glass plate is chosen as glass cover-plate, passes through 3D printing technique
Multiple glass paste rings are printed on glass cover-plate, then the glass cover-plate is placed in high temperature furnace and is sintered, and are thus existed
Multiple glass chamber structures are formed on glass cover-plate；In addition, the glass paste is the mixing of glass powder, ceramic powder and binder
Object, component set as follows: glass powder selects low melting point glass material of the glass transition temperature lower than 600 DEG C and its volume is slurry
Expect that the 60%~80% of total weight, ceramic powder selective oxidation aluminum material and its volume are the 10%~30% of slurry total weight, and
Glass powder and ceramic powder partial size are 1~10 μm, and binder is selected as the mixture of ethyl cellulose and terpinol, and its volume point
Not Wei slurry total weight 1%~5% and 5%~30%；
(b) inorganic slurry is evenly applied to the glass chamber upper end of glass cover-plate, to obtain inorganic slurry layer in homogeneous thickness
As adhesive layer；
(c) more UV LED chips are mounted on the metal layer of heat-radiating substrate, complete die bond, routing or eutectic process；
(d) inorganic slurry layer on the glass chamber of glass cover-plate is directed at pressurization with heat-radiating substrate, so that UV LED chip is located at
It in glass chamber, and completes to be bonded by low-temperature setting, realizes ultraviolet LED sealing structure；
(e) ultraviolet LED for being formed with sealing structure by step (d) encapsulation wafer is subjected to cutting fragment, obtains full-inorganic
Ultraviolet LED encapsulating products.
2. a kind of full-inorganic ultraviolet LED wafer-level packaging method as described in claim 1, which is characterized in that inorganic slurry material
Matter is the systems such as aluminosilicate, magnesium phosphate, calcium aluminate, and solidification temperature is 90~150 DEG C, and curing time is 1~3h, and inorganic
Slurry layer thickness is 50~200 μm.
3. a kind of full-inorganic ultraviolet LED wafer-level packaging method, which is characterized in that this method includes the following steps:
(a) the glass cover-plate preparation containing glass chamber: plane quartz glass plate is chosen as glass cover-plate, passes through silk-screen printing skill
Art prints out multiple glass paste rings on glass cover-plate, then the glass cover-plate is placed in high temperature furnace and is sintered, thus
Multiple glass chamber structures are formed on glass cover-plate；In addition, the glass paste is the mixing of glass powder, ceramic powder and binder
Object, component set as follows: glass powder selects low melting point glass material of the glass transition temperature lower than 600 DEG C and its volume is slurry
Expect that the 60%~80% of total weight, ceramic powder selective oxidation aluminum material and its volume are the 10%~30% of slurry total weight, and
Glass powder and ceramic powder partial size are 1~10 μm, and binder is selected as the mixture of ethyl cellulose and terpinol, and its volume point
Not Wei slurry total weight 1%~4% and 5%~20%；
(b) metal layer is formed in the glass chamber upper end of glass cover-plate again, for the metal welding between heat-radiating substrate；
(c) more UV LED chips are mounted on heat-radiating substrate, and chip surrounding forms metal layer on heat-radiating substrate, then
Coated with solder or compacting weld tabs are as solder layer on the metal layer；
(d) the glass chamber upper end metal layer of glass cover-plate is directed at pressurization with the solder layer on heat-radiating substrate, so that ultraviolet LED
Chip is located in glass chamber, and realizes solder layer fusing by whole heating or local heating technology, to form ultraviolet LED
Sealing structure；
(e) ultraviolet LED for being formed with sealing structure by step (d) encapsulation wafer is subjected to cutting fragment, obtains full-inorganic
Ultraviolet LED encapsulating products.
4. a kind of full-inorganic ultraviolet LED wafer-level packaging method as claimed in claim 3, which is characterized in that glass paste ring
It is to be realized by multiple silk-screen printing, 30min or more need to be dried after being completed for printing every time at 200 DEG C.
5. a kind of full-inorganic ultraviolet LED wafer-level packaging method as claimed in claim 3, which is characterized in that on glass chamber
The metal layer at end is made by coating and low-temperature sintering nano silver paste, and sintering temperature is lower than 400 DEG C, and metal layer thickness is
5~30 μm.
6. a kind of full-inorganic ultraviolet LED wafer-level packaging method as claimed in claim 3, which is characterized in that coated with solder or
Weld tabs is the alloy materials such as golden tin, copper and tin, tin silver copper, and solder layer is 100~500 μm.
7. a kind of full-inorganic ultraviolet LED wafer-level packaging method as claimed in claim 1 or 3, which is characterized in that this is sintered
Journey is dry 1~3h first at 200~300 DEG C, 20~60min of heat preservation at 500~800 DEG C is then heated to, finally 250
Anneal 30min or more at~350 DEG C.
8. a kind of full-inorganic ultraviolet LED wafer-level packaging method as claimed in claim 1 or 3, which is characterized in that glass cover-plate
The glass chamber height of upper production is 0.5~2mm, and shape is circle, square, rectangle etc..
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| CN111477733A (en) * | 2020-04-26 | 2020-07-31 | 深圳市环基实业有限公司 | Chip packaging method |
| CN113675316A (en) * | 2021-07-05 | 2021-11-19 | 深圳大道半导体有限公司 | UV-LED device and manufacturing method thereof |
| CN113725343A (en) * | 2021-09-01 | 2021-11-30 | 深圳市佑明光电有限公司 | Efficient deep ultraviolet LED light source packaging structure and packaging method thereof |
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