CN109831187B - Variable-frequency triangular carrier generation circuit - Google Patents
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Abstract
The invention discloses a frequency variable triangular carrier wave generating circuit, which comprises: the device comprises an inverted sine wave generating circuit and a carrier wave generating circuit which are connected with each other; the inverted sine wave generating circuit is used for enabling the output end to generate inverted sine wave current; the carrier generation circuit is used for generating a triangular carrier corresponding to the inverted sine wave current. The variable-frequency triangular carrier generating circuit has the capability of coping with the voltage fluctuation of a power grid, and can reduce the switching loss of a power switch and improve the efficiency of the whole machine when the variable-frequency triangular carrier generating circuit is used for triangular carriers of a single-phase power factor corrector.
Description
Technical Field
The invention relates to the technical field of power electronic conversion, in particular to a frequency-variable triangular carrier generation circuit.
Background
In a power electronic converter, a drive signal for a switching device is usually generated by comparing a modulation wave with a triangular carrier wave, and the frequency of the carrier wave directly determines the switching frequency of the switching device. Taking a single-phase Active Power Factor Corrector (APFC) as an example, the carrier frequency in a common APFC circuit is generally fixed, which leads to a significant increase in the switching loss of devices near the peak of the grid voltage, and therefore a triangular carrier generation circuit with variable frequency is needed.
Through the search of the prior art of the frequency variable triangular carrier generation circuit, the prior art is found to have some defects:
the application numbers published by Yang Xijun et al in 2006 are: 200610023250.2, the name is: the patent of the triangular wave generating circuit with the switching frequency period modulation provides the triangular wave generating circuit with the switching frequency period modulation, which needs to use a digital controller, has complicated algorithm design and high development cost; the application numbers published by chenchenchenkepeng et al in 2017 are: 201610651536.9, the name is: a pulse frequency modulated carrier wave generating circuit is provided in the patent of a pulse frequency modulated carrier wave generating circuit, a hardware circuit is used for realizing a triangular carrier wave with variable frequency, but the triangular carrier wave can not work normally when the voltage of a power grid is reduced, and the applicability is low; another application number disclosed in 2017 by chenchenkepeng et al is: 201610651641.2, the name is: the patent of the carrier generation circuit for pulse frequency modulation provides a carrier generation circuit for pulse frequency modulation, and a hardware circuit is also used for realizing a triangular carrier with variable frequency, but a voltage transformer used in the circuit is complex in design, and the circuit can not work normally when the voltage of a power grid is reduced.
In fact, the switching frequency is generally changed by using digital control, digital controllers such as a DSP (digital signal processor) and the like are needed, the structure is complex, the design process is complicated, the cost is high, and quick system building is not easy to realize. The existing carrier generation circuit with variable frequency realized by using an analog device can not work normally when the voltage of a power grid fluctuates.
Disclosure of Invention
Aiming at the problems in the prior art, the invention provides the frequency-variable triangular carrier generation circuit, the frequency-variable carrier generation circuit is built by adopting hardware, and the hardware cost and the algorithm design expense are saved; the carrier frequency is in an inverted sine wave change rule, the switching frequency of the power grid at high voltage is reduced, and the switching loss is reduced due to the fact that the grid current is higher when the grid voltage is higher.
In order to solve the technical problems, the invention is realized by the following technical scheme:
the invention provides a frequency variable triangular carrier wave generating circuit, comprising: the device comprises an inverted sine wave generating circuit and a carrier wave generating circuit which are connected with each other; wherein,
the inverted sine wave generating circuit is used for enabling the output end to generate inverted sine wave current;
the carrier generation circuit is used for generating a triangular carrier corresponding to the inverted sine wave current.
Preferably, the inverted sine wave generating circuit includes: a rectifier circuit, a subtractor circuit, and a constant current source circuit; wherein,
the rectifier circuit includes: a DC source circuit and a full-wave rectification circuit; the direct current source circuit is used for rectifying and filtering input alternating current voltage to obtain direct current voltage, and then sampling and inputting the direct current voltage to the subtracter circuit; the full-wave rectifying circuit is used for rectifying input alternating-current voltage to obtain sinusoidal full-wave voltage; then sampling and inputting the samples into the subtracter circuit;
the subtractor circuit is connected with the rectifying circuit and is used for subtracting the sinusoidal full-wave voltage obtained by the full-wave rectifying circuit from the direct-current voltage obtained by the direct-current source circuit to obtain an inverted sinusoidal voltage;
the constant current source circuit is connected with the subtracter circuit and is used for converting the inverted sine wave voltage obtained by the subtracter circuit into inverted sine wave current.
Preferably, the direct current source circuit comprises an alternating current power source us, diodes D1, D2, D3 and D4, resistors R1, R2, R3 and R4, a capacitor C1 and a junction field effect transistor T1; the full-wave rectifying circuit comprises an alternating current power supply us, diodes D5, D6, D7 and D8, resistors R5 and R6 and a junction field effect transistor T2; the subtractor circuit comprises resistors R7, R8, R9, R10 and an operational amplifier OP 1; the constant current source circuit comprises resistors R11 and R12, a voltage stabilizing diode ZD1 and a triode Q1; wherein,
anodes of the diodes D1 and D3 are respectively connected to two ends of the ac power source us, a cathode of the diode D2 is connected to an anode of the diode D1, a cathode of the diode D4 is connected to an anode of the diode D3, cathodes of the diodes D1 and D3 are connected to one end of the capacitor C1, and anodes of the diodes D2 and D4 are connected to the other end of the capacitor C1 while being grounded; the resistors R1 and R2 are connected in series, the other end of the resistor R1 is connected to the cathode connection point of the diodes D1 and D3, the other end of the resistor R2 is connected to the anode connection point of the diodes D2 and D4, and the connection points of the resistors R1 and R2 are connected with the gates of the junction field effect transistors T1 and T2; the resistors R3 and R4 are connected in series, the other end of the resistor R3 is connected to the cathode connection point of the diodes D1 and D3, the other end of the resistor R4 is connected with the drain of the junction field effect transistor T1, the source of the junction field effect transistor T1 is grounded, the connection point of the resistors R3 and R4 is connected with one end of the resistor R8, the other end of the resistor R8 is connected to the non-inverting input end of the operational amplifier OP1 and is connected with one end of the resistor R7, and the other end of the resistor R7 is grounded; anodes of the diodes D5 and D7 are respectively connected to two ends of an ac power source us, a cathode of the diode D6 is connected to an anode of the diode D5, a cathode of the diode D8 is connected to an anode of the diode D7, cathodes of the diodes D5 and D7 are connected, anodes of the diodes D6 and D8 are connected, the resistors R5 and R6 are connected in series, the other end of the resistor R5 is connected to a connection point of the diodes D5 and D7, the other end of the resistor R6 is connected to a drain of the jfet T2, a source of the jfet T2 is connected to anodes of the diodes D6 and D8 and is connected to ground, a connection point of the resistors R5 and R6 is connected to one end of the resistor R9, the other end of the resistor R9 is connected to an inverting input end of the OP amp 1 and is connected to one end of the resistor R10, and the other end of the resistor R10 is connected to an output end of the OP amp 1, the output end of the operational amplifier OP1 is respectively connected with one end of a resistor R11 and one end of a resistor R12, the other end of the resistor R11 is connected with the base electrode of the triode Q1 and is simultaneously connected with the cathode of the zener diode ZD1, the anode of the zener diode ZD1 is grounded, and the other end of the resistor R12 is connected with the emitter of the triode Q1.
Preferably, the carrier generation circuit includes: the circuit comprises a chip internal current source I1, an internal reference voltage Vr1, a switching device T3, a capacitor C2, a voltage stabilizing diode ZD2 and a hysteresis comparator OP 2; wherein,
an anode of the zener diode ZD2 is connected to one end of the capacitor C2 and is grounded, a cathode of the zener diode ZD2 is connected to the other end of the capacitor C2 and is connected to a collector of the transistor Q1, a source of the switching device T3, and a non-inverting input terminal of the hysteretic comparator OP2, an output terminal of the hysteretic comparator OP2 is connected to a gate of the switching device T3, a drain of the jfet T1 is grounded, the on-chip current source I1 is connected to a source of the switching device T3, an inverting input terminal of the hysteretic comparator OP2 is connected to the internal reference voltage Vr1, and a voltage across the capacitor C2 is an output of the carrier generation circuit.
Compared with the prior art, the invention has the following advantages:
(1) according to the frequency-variable triangular carrier wave generating circuit, the frequency-variable carrier wave generating circuit is built by adopting hardware, and compared with a common microcontroller for generating the same carrier wave, the hardware cost and the algorithm design expense are saved;
(2) the variable-frequency triangular carrier wave generating circuit has the advantages that the carrier frequency is changed in an inverted sine wave mode, and when the variable-frequency triangular carrier wave generating circuit is used for triangular carriers of a single-phase power factor corrector, the switching frequency of a power grid at high voltage is reduced, and the switching loss is reduced due to the fact that the grid current is higher when the grid voltage is higher;
(3) according to the frequency-variable triangular carrier generating circuit, the carrier frequency changes along with the voltage of a power grid, the circuit belongs to the comprehensive modulation of pulse width and pulse frequency modulation, the center frequency is fully diffused, the interference frequency is in broadband distribution, high interference points are eliminated, and the reduction of EMI is facilitated;
(4) compared with the frequency-variable carrier wave generating circuit built by the existing analog device, the frequency-variable triangular carrier wave generating circuit provided by the invention has the advantages that as the junction type field effect transistor related circuit is adopted, when the grid voltage is reduced, the on-resistance of the junction type field effect transistor is increased, and the voltage division ratio of the voltage division branch is changed, so that the problem of integral reduction of the carrier frequency caused by reduction of the grid voltage can be solved to the greatest extent, the capability of resisting the grid voltage fluctuation is improved, the application range is expanded, and the stability is improved.
Of course, it is not necessary for any product in which the invention is practiced to achieve all of the above-described advantages at the same time.
Drawings
Embodiments of the invention are further described below with reference to the accompanying drawings:
fig. 1 is a schematic structural diagram of a frequency-variable triangular carrier generation circuit according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a frequency-variable triangular carrier generation circuit according to a preferred embodiment of the present invention;
FIG. 3 is a schematic circuit diagram of a variable frequency triangular carrier generation circuit according to an embodiment of the present invention;
FIG. 4 is a graph showing waveforms of output voltages of a full-wave rectifier circuit composed of D5-D8 according to an embodiment of the present invention;
fig. 5 is a graph of the output voltage waveform of the OP-amp OP1 according to an embodiment of the present invention;
fig. 6 is a graph of the voltage waveform across the capacitor C2 according to an embodiment of the present invention.
Description of reference numerals: 11-inverted sine wave generating circuit, 12-carrier wave generating circuit;
111-a rectifying circuit, 112-a subtractor circuit, 113-a constant current source circuit;
1111-direct current source circuit, 1112-full wave rectification circuit.
Detailed Description
The following examples are given for the detailed implementation and specific operation of the present invention, but the scope of the present invention is not limited to the following examples.
The frequency-variable triangular carrier generating circuit of the present invention includes: an inverted sine wave generation circuit 11 and a carrier wave generation circuit 12 connected to each other; the inverted sine wave generating circuit 11 is used for enabling the output end to generate inverted sine wave current; the carrier generation circuit 12 is for generating a triangular carrier corresponding to the inverted sine wave current.
In the preferred embodiment, the inverted sine wave generating circuit 11 includes: a rectifier circuit 111, a subtractor circuit 112, and a constant current source circuit 113. Wherein, the rectification circuit 111 includes: a dc source circuit 1111 and a full-wave rectifier circuit 1112; the dc source circuit 1111 is configured to perform rectification filtering on the input ac voltage to obtain a dc voltage, and then sample and input the dc voltage to the subtractor circuit 112; the full-wave rectification circuit 1112 is configured to rectify an input ac voltage to obtain a sinusoidal full-wave voltage; the samples are then input to subtractor circuit 112. The subtractor circuit 112 is connected to the rectifier circuit 111, and configured to subtract the sinusoidal full-wave voltage obtained by the full-wave rectifier circuit 1112 from the dc voltage obtained by the dc source circuit 1111 to obtain an inverted sinusoidal voltage. The constant current source circuit 113 is connected to the subtractor circuit 112, and converts the inverted sine wave voltage obtained by the subtractor circuit 112 into an inverted sine wave current.
Fig. 3 is a schematic circuit diagram of a frequency-variable triangular carrier generation circuit according to an embodiment of the present invention.
Referring to fig. 3, in the present embodiment, the inverted sine wave generating circuit is shown as part 1 in fig. 3, and the carrier wave generating circuit is shown as parts 2 and 3 in fig. 3, wherein part 3 is an internal module of the chip IR 1155S. The direct current source circuit comprises an alternating current power supply us, diodes D1, D2, D3 and D4, resistors R1, R2, R3 and R4, a capacitor C1 and a junction field effect transistor T1; the full-wave rectification circuit comprises an alternating current power supply us, diodes D5, D6, D7 and D8, resistors R5 and R6 and a junction field effect transistor T2; the subtractor circuit comprises resistors R7, R8, R9, R10 and an operational amplifier OP 1; the constant current source circuit comprises resistors R11 and R12, a voltage stabilizing diode ZD1 and a triode Q1. Anodes of diodes D1 and D3 are respectively connected to two ends of an alternating current power source us, a cathode of a diode D2 is connected to an anode of a diode D1, a cathode of a diode D4 is connected to an anode of a diode D3, cathodes of diodes D1 and D3 are connected to one end of a capacitor C1, and anodes of diodes D2 and D4 are connected to the other end of a capacitor C1 and are grounded; resistors R1 and R2 are connected in series, the other end of the resistor R1 is connected to the cathode connection point of the diodes D1 and D3, the other end of the resistor R2 is connected to the anode connection point of the diodes D2 and D4, and the connection points of the resistors R1 and R2 are connected with the gates of the junction field effect transistors T1 and T2; the resistors R3 and R4 are connected in series, the other end of the resistor R3 is connected to the cathode connection point of the diodes D1 and D3, the other end of the resistor R4 is connected with the drain of the junction field effect transistor T1, the source of the junction field effect transistor T1 is grounded, the connection point of the resistors R3 and R4 is connected with one end of the resistor R8, the other end of the resistor R8 is connected to the non-inverting input end of the operational amplifier OP1 and is connected with one end of the resistor R7, and the other end of the resistor R7 is grounded; anodes of diodes D5 and D5 are respectively connected to both ends of the ac power source us, a cathode of the diode D5 is connected to an anode of the diode D5, cathodes of the diodes D5 and D5 are connected to anodes of the diodes D5, resistors R5 and R5 are connected in series, the other end of the resistor R5 is connected to a connection point of the diodes D5 and D5, the other end of the resistor R5 is connected to a drain of a junction field effect transistor T5, a source of the junction field effect transistor T5 is connected to anodes of the diodes D5 and grounded, connection points of the resistors R5 and R5 are connected to one end of the resistor R5, the other end of the resistor R5 is connected to an inverting input terminal of the operational amplifier OP 5 and to one end of the resistor R5, the other end of the resistor R5 is connected to an output terminal of the operational amplifier 5, and a base of the resistor R5 is connected to a transistor Q5. Meanwhile, the anode of the diode is connected with the cathode of the voltage stabilizing diode ZD1, the anode of the voltage stabilizing diode ZD1 is grounded, and the other end of the resistor R12 is connected with the emitter of the triode Q1.
In addition, the carrier generation circuit of the present embodiment includes: the circuit comprises a chip internal current source I1, an internal reference voltage Vr1, a switching device T3, a capacitor C2, a voltage stabilizing diode ZD2 and a hysteresis comparator OP 2; the anode of the zener diode ZD2 is connected to one end of the capacitor C2, and is grounded, the cathode of the zener diode ZD2 is connected to the other end of the capacitor C2, and is connected to the collector of the triode Q1, the source of the switching device T3, and the non-inverting input terminal of the hysteresis comparator OP2, the output terminal of the hysteresis comparator OP2 is connected to the gate of the switching device T3, the drain of the jfet T1 is grounded, the chip internal current source I1 is connected to the source of the switching device T3, the inverting input terminal of the hysteresis comparator OP2 is connected to the internal reference voltage Vr1, and the voltage at the two ends of the capacitor C2 is the output of the carrier generation circuit.
In this example, the types of the above components are selected:
input alternating voltage us: 220V, 50 Hz;
diodes D1-D8: 500V, 10A/100 ℃;
capacitance C1: 500V, 1. mu.F;
capacitance C2: 50V, 40 pF;
resistance R1: 400k omega
Resistance R2: 20k omega
Resistance R3: 298k omega
Resistance R4: 12k omega
Resistance R5: 308k omega
Resistance R6: 5k omega
Resistance R7: 10k omega
Resistance R8: 10k omega
Resistance R9: 10k omega
Resistance R10: 10k omega
Resistance R11: 4.7k omega
Resistance R12: 470k omega
A transistor Q1: PNP, 50V;
zener diodes ZD1, ZD 2: 5V, 1N 4733;
operational amplifier OP 1: LM 358;
junction field effect transistors T1, T2: J2N 3819.
When the circuit works: a direct current source circuit in the rectification circuit rectifies and filters input alternating current voltage to obtain direct current voltage, the direct current voltage is sampled and input into a subtracter through a resistor R4 and a junction field effect transistor T1, a full-wave rectification circuit formed by D5-D8 rectifies the input alternating current voltage to obtain sine full-wave rectification voltage, the sine full-wave rectification voltage is sampled and input into the subtracter through a resistor R6 and a junction field effect transistor T2 as shown in fig. 4, and the full-wave rectification voltage is subtracted from the direct current voltage to obtain an inverted sine wave voltage waveform as shown in fig. 5. And the inverted sine wave voltage signal is connected to a constant current source circuit to obtain inverted sine wave output current. The current and the current source in the IR1155S chip charge the capacitor C2 together, when the capacitor voltage rises to Vr1, the output of the hysteresis comparator OP2 is positive, the switching device T3 is conducted, the capacitor C2 is discharged, when the capacitor C2 is 0V, the OP2 is reset, and the C2 starts to charge again. The triangular carrier wave with the frequency of the inverted sine wave law is formed by the cyclic reciprocating, as shown in fig. 6, when the voltage of the power grid is reduced, the rectified output voltage is reduced, the voltage on the resistor R2 is reduced, namely the grid voltages of the junction field effect transistors T1 and T2 are reduced, and the on-resistances of the T1 and T2 are increased, so that the voltages sampled on the R4 and T1, R6 and T2 are kept approximately unchanged, the voltage stabilizing diode ZD1 can normally work in an inverted breakdown state, and the operation effect of the circuit when the voltage of the power grid fluctuates is ensured.
The invention adopts a hardware circuit to build the frequency-variable triangular carrier wave generating circuit with the capability of resisting the voltage fluctuation of the power grid, can be applied to a single-phase active power factor corrector and a single-phase active power filter, has lower cost compared with a common microcontroller, has the capability of coping with the voltage fluctuation of the power grid due to the change of the switching frequency because of the design of the hardware circuit, and adopts the inverted sine wave circuit to ensure that the carrier frequency is low when the voltage is high, thereby reducing the loss of a switching device.
The embodiments were chosen and described in order to best explain the principles of the invention and the practical application, and not to limit the invention. Any modifications and variations within the scope of the description, which may occur to those skilled in the art, are intended to be within the scope of the invention.
Claims (1)
1. A frequency variable triangular carrier generation circuit, comprising: the device comprises an inverted sine wave generating circuit and a carrier wave generating circuit which are connected with each other; the inverted sine wave generating circuit is used for enabling an output end to generate inverted sine wave current; the carrier wave generating circuit is used for generating a triangular carrier wave corresponding to the inverted sine wave current;
the inverted sine wave generating circuit includes: a rectifier circuit, a subtractor circuit, and a constant current source circuit; wherein,
the rectifier circuit includes: a DC source circuit and a full-wave rectification circuit; the direct current source circuit is used for rectifying and filtering input alternating current voltage to obtain direct current voltage, and then sampling and inputting the direct current voltage to the subtracter circuit; the full-wave rectifying circuit is used for rectifying input alternating-current voltage to obtain sinusoidal full-wave voltage; then sampling and inputting the samples into the subtracter circuit;
the subtractor circuit is connected with the rectifying circuit and is used for subtracting the sinusoidal full-wave voltage obtained by the full-wave rectifying circuit from the direct-current voltage obtained by the direct-current source circuit to obtain an inverted sinusoidal voltage;
the constant current source circuit is connected with the subtracter circuit and is used for converting the inverted sine wave voltage obtained by the subtracter circuit into inverted sine wave current;
the DC source circuit comprises an AC power source usDiodes D1, D2, D3 and D4, resistors R1, R2, R3 and R4, a capacitor C1 and a junction field effect transistor T1; the full-wave rectification circuit comprises an alternating current power supply usDiodes D5, D6, D7, D8, resistors R5, R6 and a junction field effect transistor T2; the subtractor circuit comprises resistors R7, R8, R9, R10 and an operational amplifier OP 1; the constant current source circuit comprises resistors R11 and R12, a voltage stabilizing diode ZD1 and a triode Q1; wherein,
anodes of the diodes D1 and D3 are respectively connected to two ends of the ac power source us, a cathode of the diode D2 is connected to an anode of the diode D1, a cathode of the diode D4 is connected to an anode of the diode D3, cathodes of the diodes D1 and D3 are connected to one end of the capacitor C1, and anodes of the diodes D2 and D4 are connected to the other end of the capacitor C1 while being grounded; the resistors R1 and R2 are connected in series, the other end of the resistor R1 is connected to the cathode connection point of the diodes D1 and D3, the other end of the resistor R2 is connected to the anode connection point of the diodes D2 and D4, and the connection points of the resistors R1 and R2 are connected with the gates of the junction field effect transistors T1 and T2; the resistors R3 and R4 are connected in series, the other end of the resistor R3 is connected to the cathode connection point of the diodes D1 and D3, the other end of the resistor R4 is connected with the drain of the junction field effect transistor T1, the source of the junction field effect transistor T1 is grounded, the connection point of the resistors R3 and R4 is connected with one end of the resistor R8, the other end of the resistor R8 is connected to the non-inverting input end of the operational amplifier OP1 and is connected with one end of the resistor R7, and the other end of the resistor R7 is grounded; anodes of the diodes D5 and D7 are respectively connected to two ends of an ac power source us, a cathode of the diode D6 is connected to an anode of the diode D5, a cathode of the diode D8 is connected to an anode of the diode D7, cathodes of the diodes D5 and D7 are connected, anodes of the diodes D6 and D8 are connected, the resistors R5 and R6 are connected in series, the other end of the resistor R5 is connected to a connection point of the diodes D5 and D7, the other end of the resistor R6 is connected to a drain of the jfet T2, a source of the jfet T2 is connected to anodes of the diodes D6 and D8 and is connected to ground, a connection point of the resistors R5 and R6 is connected to one end of the resistor R9, the other end of the resistor R9 is connected to an inverting input end of the OP amp 1 and is connected to one end of the resistor R10, and the other end of the resistor R10 is connected to an output end of the OP amp 1, the output end of the operational amplifier OP1 is respectively connected with one end of a resistor R11 and one end of a resistor R12, the other end of the resistor R11 is connected with the base electrode of the triode Q1 and is simultaneously connected with the cathode of the zener diode ZD1, the anode of the zener diode ZD1 is grounded, and the other end of the resistor R12 is connected with the emitter of the triode Q1;
the carrier generation circuit includes: the circuit comprises a chip internal current source I1, an internal reference voltage Vr1, a switching device T3, a capacitor C2, a voltage stabilizing diode ZD2 and a hysteresis comparator OP 2; wherein,
an anode of the zener diode ZD2 is connected to one end of the capacitor C2 and is grounded, a cathode of the zener diode ZD2 is connected to the other end of the capacitor C2 and is connected to a collector of the transistor Q1, a source of the switching device T3, and a non-inverting input terminal of the hysteretic comparator OP2, an output terminal of the hysteretic comparator OP2 is connected to a gate of the switching device T3, a drain of the jfet T1 is grounded, the on-chip current source I1 is connected to a source of the switching device T3, an inverting input terminal of the hysteretic comparator OP2 is connected to the internal reference voltage Vr1, and a voltage across the capacitor C2 is an output of the carrier generation circuit.
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| US5103711A (en) * | 1988-03-13 | 1992-04-14 | Casio Computer Co., Ltd. | Musical sound waveform generator having a carrier signal and a modulation signal mixed at a controlled mixing ratio |
| CN1510839A (en) * | 2002-12-24 | 2004-07-07 | ��ʿͨ��ʽ���� | Spread spectrum clock generating circuit, vibrating producing circuit and semiconductor device |
| CN103326556A (en) * | 2013-05-14 | 2013-09-25 | 上海交通大学 | Single-phase AC-DC conversion circuit of directional power |
| CN106300958A (en) * | 2016-08-10 | 2017-01-04 | 上海交通大学 | A kind of carrier generating circuit of pulse frequency modulated |
| CN106330146A (en) * | 2016-08-10 | 2017-01-11 | 上海交通大学 | Carrier generation circuit for pulse frequency modulation |
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| CN109831187A (en) | 2019-05-31 |
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